MAAPGM0029 [TE]

3.6-6.5 GHz 1W Power Amplifier; 3.6-6.5 GHz的1W功率放大器
MAAPGM0029
型号: MAAPGM0029
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

3.6-6.5 GHz 1W Power Amplifier
3.6-6.5 GHz的1W功率放大器

放大器 功率放大器
文件: 总5页 (文件大小:205K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
3.6-6.5 GHz 1W Power Amplifier  
MAAPGM0029  
RO-P-DS-3077 A  
Preliminary Information  
Features  
1 Watt Saturated Output Power Level  
Variable Drain Voltage (4-10V) Operation  
GaAs MSAG® Process  
Primary Applications  
APGM0029  
YWWLLLL  
Wireless Local Loop  
3.7- 4.2 GHz SatCom  
Description  
The MAAPGM0029 is a packaged, 2-stage, 1W power amplifier  
with on-chip bias networks in a bolt down ceramic package,  
allowing easy assembly. This product is fully matched to 50  
ohms on both the input and output. It can be used as a power  
amplifier stage or as a driver stage in high power applications.  
Pin Number RF Designator  
1
2
3
4
5
6
7
No Connection  
No Connection  
RF IN  
Fabricated using M/A-COM’s repeatable, high performance and  
highly reliable GaAs Multifunction Self-Aligned Gate MESFET  
Process, each device is 100% RF tested on wafer to ensure  
performance compliance.  
No Connection  
VGG  
M/A-COM’s MSAG™ process features robust silicon-like  
manufacturing processes, planar processing of ion implanted  
transistors, multiple implant capability enabling power, low-noise,  
switch and digital FETs on a single chip, and polyimide scratch  
protection for ease of use with automated manufacturing  
processes. The use of refractory metals and the absence of  
platinum in the gate metal formulation prevents hydrogen  
poisoning when employed in hermetic packaging.  
No Connection  
No Connection  
8
RF OUT  
9
No Connection  
VDD  
10  
Maximum Operating Conditions 1  
Parameter  
Absolute Maximum  
Units  
Symbol  
Input Power  
21.0  
+12.0  
-3.0  
dBm  
V
PIN  
VDD  
VGG  
Drain Supply Voltage  
Gate Supply Voltage  
V
Quiescent Drain Current (No RF, 40% IDSS)  
Quiescent DC Power Dissipated (No RF)  
470  
3.2  
mA  
W
IDQ  
PDISS  
Junction Temperature  
Storage Temperature  
Processing Temperature  
180  
-55 to +150  
230  
°C  
°C  
°C  
TJ  
TSTG  
1. Operation outside of these ranges may reduce product reliability.  
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
Visit www.macom.com for additional data sheets and product information.  
3.6-6.5 GHz 1W Power Amplifier  
MAAPGM0029  
RO-P-DS-3077 A  
Preliminary Information  
Recommended Operating Conditions  
Characteristic  
Drain Supply Voltage  
Gate Supply Voltage  
Input Power  
Symbol  
VDD  
Min  
4.0  
Typ  
8.0  
Max  
10.0  
-1.5  
21  
Unit  
V
VGG  
PIN  
-2.4  
-2.0  
16.0  
V
dBm  
°C  
Junction Temperature  
TJ  
150  
Thermal Resistance  
ΘJC  
28.4  
°C/W  
°C  
Package Base Temperature  
TB  
Note 2  
2. Maximum Package Base Temperature = 150°C — ΘJC* VDD * IDQ  
Electrical Characteristics: TB = 40°C, Z0 = 50 , VDD = 8V, IDQ 300 mA3, Pin = 16 dBm, RG 240 Ω  
Parameter  
Symbol  
Typical  
3.5-6.5  
30  
Units  
GHz  
dBm  
%
Bandwidth  
f
Output Power  
POUT  
PAE  
P1dB  
G
Power Added Efficiency  
1-dB Compression Point  
Small Signal Gain  
Input VSWR  
34  
30  
dBm  
dB  
19  
VSWR  
VSWR  
IGG  
2.:1  
2.:1  
< 4  
Output VSWR  
Gate Supply Current  
Drain Supply Current  
Noise Figure  
mA  
mA  
IDD  
< 500  
8
NF  
dB  
2nd Harmonic  
2f  
-15  
dBc  
dBc  
dBm  
3rd Harmonic  
3f  
-25  
Output Third Order Intercept  
OTOI  
IM3  
42  
3rd Order Intermodulation Distortion,  
Single Carrier Level = 21 dBm  
-16  
dBm  
dBm  
5th Order Intermodulation Distortion,  
Single Carrier Level = 21 dBm  
IM5  
-39  
3. Adjust VGG between –2.4 to –1.5V to achieve indicated IDQ  
.
Operating Instructions  
This device is static sensitive. Please handle with care. To operate the device,  
follow these steps.  
1. Apply VGG -1.8V, VDD= 0 V.  
2. Ramp VDD to desired voltage, typically 8 V.  
3. Adjust VGG to set IDQ, (See Note 3 above).  
4. Set RF input.  
5. Power down sequence in reverse. Turn VGG off last.  
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
Visit www.macom.com for additional data sheets and product information.  
3.6-6.5 GHz 1W Power Amplifier  
MAAPGM0029  
RO-P-DS-3077 A  
Preliminary Information  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
POUT  
PAE  
POUT  
PAE  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
4
5
6
7
8
9
10  
Frequency (GHz)  
Drain Voltage (V)  
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage  
at fo = 5 GHz  
Figure 1. Output Power and Power Added Efficiency vs. Frequency  
at VDD = 8V and Pin = 16 dBm  
50  
40  
30  
20  
10  
0
30  
25  
20  
15  
10  
5
6
VDD = 4  
Gain  
Input VSWR  
Output VSWR  
VDD = 6  
VDD = 8  
VDD = 10  
5
4
3
2
1
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
Frequency (GHz)  
Frequency (GHz)  
Figure 3. 1dB Compression Point vs. Drain Voltage  
Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 8V  
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
3.6-6.5 GHz 1W Power Amplifier  
MAAPGM0029  
RO-P-DS-3077 A  
Preliminary Information  
APGM0029  
Figure 5. CR-15 Package Dimensions  
The CR-15 is a high frequency, low thermal resistance package. The package consists of a  
cofired ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish  
consists of electrolytic gold over nickel plate.  
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
products for any particular purpose, nor does M/A-COM assume any liability  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
whatsoever arising out of the use or application of any product(s) or  
information.  
Visit www.macom.com for additional data sheets and product information.  
3.6-6.5 GHz 1W Power Amplifier  
MAAPGM0029  
RO-P-DS-3077 A  
Preliminary Information  
Figure 6. Recommended Bias Configuration  
100 pF  
VDD  
0.1 µF  
RFIN  
RFOUT  
RG  
(See Electrical Characteristics - Page 2)  
VGG  
100 pF  
Pin Number  
RF Designator  
No Connection  
No Connection  
RF IN  
0.1 µF  
1
2
3
4
No Connection  
VGG  
5
6
No Connection  
No Connection  
RF OUT  
7
8
9
No Connection  
VDD  
10  
Assembly Instructions:  
This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board  
which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically  
conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of  
the package to housing interface. Refer to M/A-COM Application Note #M567* for more information .  
For applications where surface mount components are to be installed after the CR-15 installation, this package will not be  
damaged when subjected to typical convection or IR oven reflow profiles. Refer to M/A-COM Application Note #M538* for  
maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron  
or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static  
discharge (ESD) safe.  
* Application Notes can be found by going to the Site Search Page on M/A-COM’s web page  
(http://www.macom.com/search/search.jsp) and searching for the required Application Note.  
Biasing Notes:  
The 100pF bypass capacitors must be placed as close to the VGG and VDD pins as possible  
(recommended < 100 mils).  
A negative bias must be applied to VGG before applying a positive bias to VDD to prevent damage to the amplifier.  
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  

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