MAAPGM0066-DIE [TE]

Amplifier, Power, 2 W 2.5-6.0 GHz; 放大器,电源, 2 W 2.5-6.0 GHz的
MAAPGM0066-DIE
型号: MAAPGM0066-DIE
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

Amplifier, Power, 2 W 2.5-6.0 GHz
放大器,电源, 2 W 2.5-6.0 GHz的

放大器
文件: 总8页 (文件大小:317K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Amplifier, Power, 2 W  
2.5-6.0 GHz  
MAAPGM0066-DIE  
Rev C  
Preliminary Datasheet  
Features  
2.5 Watt Saturated Output Power Level  
Variable Drain Voltage (4-10V) Operation  
MSAG® Process  
Description  
The MAAPGM0066-DIE is a 3-stage 2 W power amplifier with on-chip  
bias networks. This product is fully matched to 50 ohms on both the input  
and output. It can be used as a power amplifier stage or as a driver stage  
in high power applications.  
Fabricated using M/A-COM’s repeatable, high performance and highly  
reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each  
device is 100% RF tested on wafer to ensure performance compliance.  
M/A-COM’s MSAG™ process features robust silicon-like manufacturing  
processes, planar processing of ion implanted transistors, multiple im-  
plant capability enabling power, low-noise, switch and digital FETs on a  
single chip, and polyimide scratch protection for ease of use with auto-  
mated manufacturing processes. The use of refractory metals and the  
absence of platinum in the gate metal formulation prevents hydrogen  
poisoning when employed in hermetic packaging.  
Primary Applications  
Point-to-Point Radios  
Point-to-Multipoint Radios  
SatCom  
Broadband Wireless Access  
Also Available in:  
SAMPLES  
Description  
Plastic  
Sample Board (Die)  
Mechanical Sample (Die)  
Part Number  
MAAP-000066-PKG003  
MAAP-000066-SMB004  
MAAP-000066-MCH000  
Electrical Characteristics: TB = 30°C1, Z0 = 50Ω, VDD = 8V, IDQ = 650mA2, Pin = 6 dBm  
Parameter  
Symbol  
Typical  
2.5-6.0  
33.5  
33.3  
33.5  
35  
Units  
GHz  
dBm  
dBm  
dB  
Bandwidth  
f
POUT  
P1dB  
G
Output Power  
1-dB Compression Point  
Small Signal Gain  
Power Added Efficiency  
Input VSWR  
%
PAE  
VSWR  
1.4:1  
2.4:1  
42  
Output VSWR  
VSWR  
TOI  
Output Third Order Intercept  
dBm  
dBc  
Output Third Order Intermod,  
Pout = 26 dBm (DCL)  
40  
IMD3  
Gate Current  
Drain Current  
10  
mA  
mA  
IGG  
IDD  
810  
1. TB = MMIC Base Temperature  
2. Adjust VGG between –2.6 and –1.2V to achieve specified Idq.  
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
Amplifier, Power, 2 W  
2.5-6.0 GHz  
MAAPGM0066-DIE  
Rev C  
Preliminary Datasheet  
Maximum Ratings3  
Parameter  
Absolute Maximum  
Units  
Symbol  
PIN  
Input Power  
16.0  
+12.0  
-3.0  
dBm  
V
Drain Supply Voltage  
VDD  
Gate Supply Voltage  
V
VGG  
Quiescent Drain Current (No RF)  
Quiescent DC Power Dissipated (No RF)  
Junction Temperature  
1.04  
A
IDQ  
10.4  
W
°C  
°C  
PDISS  
170  
TJ  
Storage Temperature  
TSTG  
-55 to +150  
3. Operation beyond these limits may result in permanent damage to the part.  
Recommended Operating Conditions4  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Drain Voltage  
Gate Voltage  
VDD  
VGG  
4.0  
8.0  
10.0  
-1.2  
V
V
-2.6  
-2.0  
Input Power  
PIN  
ΘJC  
TB  
6.0  
13.0  
dBm  
°C/W  
°C  
Thermal Resistance  
MMIC Base Temperature  
14.0  
Note 5  
4. Operation outside of these ranges may reduce product reliability.  
5. MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ  
Power Derating Curve, Quiescent (No RF)  
12  
10  
8
6
Operating Instructions  
This device is static sensitive. Please handle with  
4
care. To operate the device, follow these steps.  
1. Apply VGG = -2.7 V, VDD= 0 V.  
2
2. Ramp VDD to desired voltage, typically 8.0 V.  
0
3. Adjust VGG to set IDQ, (approximately @ –2.0 V).  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
4. Set RF input.  
MMIC Base Temperature (ºC)  
5. Power down sequence in reverse. Turn VGG off  
last.  
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
Amplifier, Power, 2 W  
2.5-6.0 GHz  
MAAPGM0066-DIE  
Rev C  
Preliminary Datasheet  
All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted.  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
Pout  
PAE  
6V  
8V  
10V  
0
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
Frequency (GHz)  
Frequency (GHz)  
Figure 2. 1dB Compression Point and Drain Voltage at IDSQ=650mA  
Figure 1. Output Power and Power Added Efficiency  
at VD = 8V, Pin = 6dBm, and IDSQ=650mA  
40  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
-25ºC  
30ºC  
87ºC  
6V  
8V  
10V  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
Frequency (GHz)  
Frequency (GHz)  
Figure 4. Saturated Output Power and Temperature  
at VD=8V and IDSQ=650mA  
Figure 3. Saturated Output Power and Drain Voltage at IDSQ=650mA.  
40  
1.00  
0.95  
0.90  
0.85  
0.80  
0.75  
0.70  
0.65  
0.60  
0.55  
0.50  
40  
36  
32  
28  
24  
20  
16  
12  
8
6
5
4
3
2
1
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
Gain  
Input VSWR  
Output VSWR  
Pout  
SSG  
PAE  
IDS  
4
0
30  
40  
50  
60  
70  
80  
90  
100  
110  
120  
130  
140  
150  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
Junction Temperature (ºC)  
Frequency (GHz)  
Figure 5. Small Signal Gain and Input and Output VSWR  
at VD = 8V and IDSQ=650mA  
Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and  
Drain Current vs. Junction Temperature at 8V, 4 GHz, and IDSQ=650mA  
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
Visit www.macom.com for additional data sheets and product information.  
Amplifier, Power, 2 W  
2.5-6.0 GHz  
MAAPGM0066-DIE  
Rev C  
Preliminary Datasheet  
All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted.  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
3.5 GHz  
4 GHz  
4.5 GHz  
3.5 GHz  
4 GHz  
4.5 GHz  
-8  
-6  
-4  
-2  
0
2
4
6
8
10  
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
Input Power (dBm)  
Output Power (dBm)  
Figure 7. Output Power vs. Input Power and Frequency at 10V and IDSQ=650mA  
Figure 8. Gain vs. Output Power and Frequency at VD=10V and IDSQ=650mA.  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.5 GHz  
4 GHz  
4.5 GHz  
3.5 GHz  
4 GHz  
4.5 GHz  
0
-8  
-6  
-4  
-2  
0
2
4
6
8
10  
-8  
-6  
-4  
-2  
0
2
4
6
8
10  
Input Power (dBm)  
Input Power (dBm)  
Figure 9. Power Added Efficiency vs. Input Power and Frequency  
at VD=10V and IDSQ=650mA  
Figure 10. Drain Current vs. Input Power and Frequency  
at VD=10V and IDSQ =650mA  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
3.5 GHz  
4 GHz  
4.5 GHz  
3.5 GHz  
4 GHz  
4.5 GHz  
20  
22  
24  
26  
28  
Output Power (dBm)  
Figure 12. Gain vs. Output Power and Frequency at VD=8V and IDSQ=650mA.  
30  
32  
34  
36  
38  
40  
-8  
-6  
-4  
-2  
0
2
4
6
8
10  
Input Power (dBm)  
Figure 11. Output Power vs. Input Power and Frequency  
at VD=8V and IDSQ =650mA  
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
Visit www.macom.com for additional data sheets and product information.  
Amplifier, Power, 2 W  
2.5-6.0 GHz  
MAAPGM0066-DIE  
Rev C  
Preliminary Datasheet  
All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted.  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.5 GHz  
4 GHz  
3.5 GHz  
4 GHz  
4.5 GHz  
4.5 GHz  
0
-8  
-6  
-4  
-2  
0
2
4
6
8
10  
-8  
-6  
-4  
-2  
0
2
4
6
8
10  
Input Power (dBm)  
Input Power (dBm)  
Figure 13. Power Added Efficiency vs. Input Power and Frequency  
at VD=8V and IDSQ=650mA  
Figure 14. Drain Current vs. Input Power and Frequency  
at VD=8V and IDSQ=650mA  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
50  
48  
46  
44  
42  
40  
38  
36  
34  
32  
30  
3 GHz  
4 GHz  
5 GHz  
3 GHz  
4 GHz  
5 GHz  
10  
12  
14  
16  
18  
20  
22  
24  
10  
12  
14  
16  
18  
20  
22  
24  
Fundamental Output Power per Tone (dBm)  
Fundamental Output Power, Single Tone (dBm)  
Figure 16. Third Order Intermod vs. Output Power and Frequency at 6V.  
Figure 15. Third Order Intercept vs. Output Power and Frequency at 6V.  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
50  
48  
46  
44  
42  
40  
38  
36  
34  
32  
30  
3 GHz  
4 GHz  
5 GHz  
3 GHz  
4 GHz  
5 GHz  
10  
12  
14  
Fundamental Output Power per Tone (dBm)  
Figure 18. Third Order Intermod vs. Output Power and Frequency at 8V.  
16  
18  
20  
22  
24  
10  
12  
14  
Fundamental Output Power, Single Tone (dBm)  
Figure 17. Third Order Intercept vs. Output Power and Frequency at 8V.  
16  
18  
20  
22  
24  
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
Visit www.macom.com for additional data sheets and product information.  
Amplifier, Power, 2 W  
2.5-6.0 GHz  
MAAPGM0066-DIE  
Rev C  
Preliminary Datasheet  
All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted.  
50  
48  
46  
44  
42  
40  
38  
36  
34  
32  
30  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3 GHz  
4 GHz  
5 GHz  
3 GHz  
4 GHz  
5 GHz  
10  
12  
14  
Fundamental Output Power per Tone (dBm)  
Figure 20. Third Order Intermod vs. Output Power and Frequency at 10V.  
16  
18  
20  
22  
24  
10  
12  
14  
OFundamental Output Power, Single Tone (dBm)  
Figure 19. Third Order Intercept vs. Output Power and Frequency at 10V.  
16  
18  
20  
22  
24  
6
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
Amplifier, Power, 2 W  
2.5-6.0 GHz  
MAAPGM0066-DIE  
Rev C  
Preliminary Datasheet  
Mechanical Information  
Chip Size: 3.000 x 3.150 x 0.075 mm  
(118 x 124 x 3 mils)  
Chip edge to bond pad dimensions are shown to the center of the bond pad.  
Figure 1. Die Layout  
Bond Pad Dimensions  
Pad  
Size (mils)  
Size (μm)  
RF In and Out  
100 x 200  
200 x 100  
4 x 8  
8 x 4  
DC Drain Supply Voltage VDD  
DC Gate Supply Voltage VGG  
100 x 100  
4 x 4  
7
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
Amplifier, Power, 2 W  
2.5-6.0 GHz  
MAAPGM0066-DIE  
Rev C  
Preliminary Datasheet  
Assembly  
100 pF  
VDD  
0.1  
F
RFOUT  
RFIN  
VGG  
100 pF  
0.1  
F
Figure 2. Recommended operational configuration. Wire bond as shown.  
Assembly Instructions:  
Die attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 °C  
to less than 5 minutes.  
Wirebonding: Bond @ 160 °C using standard ball or thermal compres-  
sion wedge bond techniques. For DC pad connections, use either ball or  
wedge bonds. For best RF performance, use wedge bonds of shortest  
length, although ball bonds are also acceptable.  
Biasing Note: Must apply negative bias to VGG before applying posi-  
tive bias to VDD to prevent  
8
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  

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