MAAPGM0068-DIE [TE]
Amplifier, Power, 1.2W 5.7-8.5 GHz; 放大器，功率， 1.2W 5.7-8.5 GHz的
| 型号： | MAAPGM0068-DIE |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Amplifier, Power, 1.2W 5.7-8.5 GHz |
| 文件： | 总8页 (文件大小：473K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Amplifier, Power, 1.2W
5.7-8.5 GHz
MAAPGM0068-DIE
Rev B
Preliminary Datasheet
Features
♦ 1.5 Watt Saturated Output Power Level
♦ Variable Drain Voltage (6-10V) Operation
♦ MSAG® Process
Description
The MAAPGM0068-DIE is a 3-stage 1.2W power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms
on both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
Primary Applications
M/A-COM’s MSAG™ process features robust silicon-like manu-
facturing processes, planar processing of ion implanted transis-
tors, multiple implant capability enabling power, low-noise, switch
and digital FETs on a single chip, and polyimide scratch protec-
tion for ease of use with automated manufacturing processes.
The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when em-
ployed in hermetic packaging.
♦ Point-to-Point Radio
◊ 6, 7, and 8 GHz Bands
♦ SatCom
♦ Broadband Wireless Access
Also Available in:
SAMPLES
Description
Ceramic
Sample Board (Die)
Mechanical Sample (Die)
MAAP-000068-MCH000
Part Number
MAAPGM0068
MAAP-000068-SMB004
Electrical Characteristics: TB = 25°C1, Z0 = 50 Ω, VDD = 8V, IDQ = 320 mA2, Pin = 8 dBm, RG = 300 Ω
Parameter
Bandwidth
Symbol
Typical
5.7-8.5
31
Units
GHz
dBm
dBm
dB
f
Output Power
POUT
P1dB
G
1-dB Compression Point
Small Signal Gain
Power Added Efficiency
Input VSWR
31
28
38
%
PAE
VSWR
1.4:1
2.1:1
38
Output VSWR
VSWR
TOI
Output Third Order Intercept
dBm
dBc
Output Third Order Intermod,
35
IMD3
P
out = 24 dBm (DCL)
Gate Current
5
mA
mA
IGG
IDD
Drain Current
470
1. TB = MMIC Base Temperature
2. Adjust VGG between –2.6 and –1.2V to achieve specified Idq.
Amplifier, Power, 1.2W
5.7-8.5 GHz
MAAPGM0068-DIE
Rev B
Preliminary Datasheet
Maximum Ratings3
Parameter
Absolute Maximum
Units
dBm
V
Symbol
PIN
Input Power
13
+12.0
-3.0
Drain Supply Voltage
VDD
Gate Supply Voltage
V
VGG
IDQ
PDISS
TJ
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
520
mA
W
5.2
170
°C
Storage Temperature
TSTG
-55 to +150
°C
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions4
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
Gate Voltage
VDD
VGG
4.0
8.0
10.0
-1.2
V
V
-2.6
-2.0
Input Power
PIN
ΘJC
TB
8.0
11.0
dBm
°C/W
°C
Thermal Resistance
MMIC Base Temperature
28.0
Note 5
4. Operation outside of these ranges may reduce product reliability.
5. MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ
Power Derating Curve, Quiescent (No RF)
6
5
4
3
2
1
0
Operating Instructions
This device is static sensitive. Please handle with care. To
operate the device, follow these steps.
1. Apply VGG = -2.7 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 8.0 V.
3. Adjust VGG to set IDQ, (approximately @ –2.0 V).
4. Set RF input.
0
20
40
60
80
100
120
140
160
180
MMIC Base Temperature (ºC)
5. Power down sequence in reverse. Turn VGG off last.
Amplifier, Power, 1.2W
5.7-8.5 GHz
MAAPGM0068-DIE
Rev B
Preliminary Datasheet
All Data is at 25ºC MMIC base temperature, CW stimulus, unless otherwise noted.
35
33
31
29
27
25
23
21
19
17
15
50
45
40
35
30
25
20
15
10
5
35
33
31
29
27
25
23
21
19
17
15
6V
8V
Pout
PAE
10V
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
Frequency (GHz)
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency
at VD = 8V, Pin = 8dBm, and 25% IDSS
Figure 2. 1dB Compression Point and Drain Voltage at 25% IDSS
35
33
31
29
27
25
23
21
19
17
15
35
33
31
29
27
25
23
21
19
17
15
-20ºC
25ºC
75ºC
6V
8V
10V
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
Frequency (GHz)
Frequency (GHz)
Figure 3. Saturated Output Power and Drain Voltage at 25% IDSS
Figure 4. Saturated Output Power and Temperature at 8V and 25%
IDSS
45
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
40
36
32
28
24
20
16
12
8
6
5
4
3
2
1
Gain
Pout
SSG
PAE
IDS
43
41
39
37
35
33
31
29
27
25
Input VSWR
Output VSWR
4
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
30
40
50
60
70
80
90
100
110
120
130
140
150
Junction Temperature (ºC)
Frequency (GHz)
Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and
Drain Current vs. Junction Temperature at 8V, 7.5 GHz, and 25% IDSS
Figure 5. Small Signal Gain and Input and Output VSWR
at 25% IDSS and VD = 8V
Amplifier, Power, 1.2W
5.7-8.5 GHz
MAAPGM0068-DIE
Rev B
Preliminary Datasheet
All Data is at 25ºC MMIC base temperature, CW stimulus, unless otherwise noted.
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
35
33
31
29
27
25
23
21
19
17
15
6 GHz
7 GHz
8 GHz
9 GHz
6 GHz
7 GHz
8 GHz
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
12
14
16
18
20
22
24
26
28
30
32
34
36
Input Power (dBm)
Output Power (dBm)
Figure 7. Output Power vs. Input Power and Frequency at 10V and 25% IDSS
Figure 8. Gain vs. Output Power and Frequency at 10V and 25% IDSS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
45
40
35
30
25
20
15
10
5
6 GHz
7 GHz
8 GHz
9 GHz
6 GHz
7 GHz
8 GHz
9 GHz
0
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
Input Power (dBm)
Input Power (dBm)
Figure 10. Drain Current vs. Input Power and Frequency at 10V and 25% IDSS
Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and
25% IDSS
35
33
31
29
27
25
23
21
19
17
15
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
6 GHz
7 GHz
8 GHz
9 GHz
6 GHz
7 GHz
8 GHz
12
14
16
18
20
22
Output Power (dBm)
Figure 12. Gain vs. Output Power and Frequency at 8V and 25% IDSS
24
26
28
30
32
34
36
-12
-10
-8
-6
-4
-2
Input Power (dBm)
Figure 11. Output Power vs. Input Power and Frequency at 8V and 25% IDSS
0
2
4
6
8
10
12
Amplifier, Power, 1.2W
5.7-8.5 GHz
MAAPGM0068-DIE
Rev B
Preliminary Datasheet
All Data is at 25ºC MMIC base temperature, CW stimulus, unless otherwise noted.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
45
40
35
30
25
20
15
10
5
6 GHz
7 GHz
8 GHz
9 GHz
6 GHz
7 GHz
8 GHz
9 GHz
0
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
Input Power (dBm)
Input Power (dBm)
Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and
25% IDSS
Figure 14. Drain Current vs. Input Power and Frequency at 8V and 25% IDSS
50
48
46
44
42
40
38
36
34
32
30
28
26
24
22
20
100
90
80
70
60
50
40
30
20
10
0
6 GHz
7 GHz
8 GHz
6 GHz
7 GHz
8 GHz
1
3
5
7
9
11
13
15
17
19
21
1
3
5
7
9
11
13
15
17
19
21
Fundamental Output Power, Single Tone (dBm)
Fundamental Output Power per Tone (dBm)
Figure 15. Third Order Intercept vs. Output Power and Frequency at 6V.
Figure 16. Third Order Intermod vs. Output Power and Frequency at 6V.
50
48
46
44
42
40
38
36
34
32
30
28
26
24
22
20
100
90
80
70
60
50
40
30
20
10
0
6 GHz
7 GHz
8 GHz
6 GHz
7 GHz
8 GHz
1
3
5
7
9
11
Fundamental Output Power, Single Tone (dBm)
Figure 17. Third Order Intercept vs. Output Power and Frequency at 8V.
13
15
17
19
21
1
3
5
7
9
11
Fundamental Output Power per Tone (dBm)
Figure 18. Third Order Intermod vs. Output Power and Frequency at 8V.
13
15
17
19
21
Amplifier, Power, 1.2W
5.7-8.5 GHz
MAAPGM0068-DIE
Rev B
Preliminary Datasheet
All Data is at 25ºC MMIC base temperature, CW stimulus, unless otherwise noted.
50
48
46
44
42
40
38
36
34
32
30
28
26
24
22
20
100
90
80
70
60
50
40
30
20
10
0
6 GHz
7 GHz
8 GHz
6 GHz
7 GHz
8 GHz
1
3
5
7
9
11
Fundamental Output Power, Single Tone (dBm)
Figure 19. Third Order Intercept vs. Output Power and Frequency at 10V.
13
15
17
19
21
1
3
5
7
9
11
Fundamental Output Power per Tone (dBm)
Figure 20. Third Order Intermod vs. Output Power and Frequency at 10V.
13
15
17
19
21
50
60
55
50
45
40
35
30
25
20
15
10
48
46
44
42
40
38
36
34
32
30
6 GHz
6 GHz
7 GHz
8 GHz
7 GHz
8 GHz
-20 -15 -10 -5
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75
MMIC Base Temperature (ºC)
-20 -15 -10 -5
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75
MMIC Base Temperature (ºC)
Figure 21. Third Order Intercept vs. Temperature and Frequency
at 8V and Pout = 24 dBm DCL.
Figure 22. Third Order Intermod vs. Temperature and Frequency
at 8V and Pout = 24 dBm DCL.
Amplifier, Power, 1.2W
5.7-8.5 GHz
MAAPGM0068-DIE
Rev B
Preliminary Datasheet
Mechanical Information
Chip Size: 2.000 x 3.150 x 0.075 mm (78 x 124 x 3 mils)
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Figure 23. Die Layout
Bond Pad Dimensions
Pad
Size (mils)
Size (μm)
RF In and Out
100 x 200
200 x 150
4 x 8
8 x 6
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
150 x 150
6 x 6
Amplifier, Power, 1.2W
5.7-8.5 GHz
MAAPGM0068-DIE
Rev B
Preliminary Datasheet
Assembly and Bonding Diagram
VDD
0.01-0.1μF
GND
VDD
VGG
Gnd
RF
100-
200 pF
VDD
RFOUT
RFIN
100-
200 pF
300 Ω
VGG
0.01-0.1μF
GND
Figure 24. Recommended operational configuration. Wire bond as shown.
Die Handling:
Refer to Application Note AN3016.
Assembly Instructions:
Die Attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 310 °C to less than
7 minutes. Refer to Application Note AN3017 for more detailed information.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge
bond techniques. For DC pad connections, use either ball or wedge bonds. For best
RF performance, use wedge bonds of shortest length, although ball bonds are also
acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
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