MAAPGM0074-DIE [TE]
Amplifier, Power, 8W 2.0-8.0 GHz; 放大器，电源， 8W 2.0-8.0 GHz的
| 型号： | MAAPGM0074-DIE |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Amplifier, Power, 8W 2.0-8.0 GHz |
| 文件： | 总8页 (文件大小：426K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
Features
♦ 8 Watt Saturated Output Power Level
♦ Eutectically mounted to Heat Spreader
♦ Next level integration is a Silver Epoxy-Based Process
♦ Variable Drain Voltage (6-10V) Operation
♦ MSAG™ Process
Description
The MAAP-000074-PED000 is a 2-stage 8W power amplifier with on-chip bias net-
works, eutettically mounted on a 10-mil thick Copper Molybdenum (CuMo) pedes-
tal. This product is fully matched to 50 ohms on both the input and output. It can be
used as a power amplifier stage or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly reliable
GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF
tested at the die-on-pedestal assembly level to ensure performance compliance.
Primary Applications
♦ SatCom
♦ Radio Communications
♦ Radar
M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes,
planar processing of ion implanted transistors, multiple implant capability enabling
power, low-noise, switch and digital FETs on a single chip, and polyimide scratch
protection for ease of use with automated manufacturing processes. The use of
refractory metals and the absence of platinum in the gate metal formulation pre-
vents hydrogen poisoning when employed in hermetic packaging.
♦ Electronic Warfare
Also Available in:
Description
Die
Ceramic Package
Sample Board (Die)
Sample Board (Pkg)
Mechanical Sample (Die)
Part Number
MAAPGM0074-DIE MAAP-000074-PKG001 MAAP-000074-SMB004 MAAP-000074-SMB001 MAAP-000074-MCH000
Electrical Characteristics: TB = 30°C1, Z0 = 50 Ω, VDD = 10V, IDQ = 2.1A2, Pin = 28 dBm, RG=40 Ω
Parameter
Symbol
Typical
2.0-8.0
39
Units
GHz
dBm
dBm
dB
Bandwidth
f
Output Power
POUT
P1dB
1-dB Compression Point
Small Signal Gain
Input VSWR
38
14
G
VSWR
1.7:1
2.2:1
Output VSWR
VSWR
IGG
Gate Current
3.5
mA
Drain Current
2nd Harmonic, 2-4 GHz
3.5
16.5
72
A
IDD
2f
dBc
dBc
2nd Harmonic, 6-8 GHz
2f
1. TB = MMIC Base Temperature
2. Adjust VGG between –2.6 and –1.5V to achieve specified IDQ
.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
Maximum Ratings3
Parameter
Absolute Maximum
Units
dBm
V
Symbol
PIN
Input Power
33
Drain Supply Voltage
Gate Supply Voltage
+12.0
-3.0
VDD
V
VGG
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
3.0
33
A
IDQ
W
°C
°C
PDISS
170
TJ
Storage Temperature
TSTG
-55 to +150
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions4
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
Gate Voltage
VDD
VGG
4.0
10
10
V
V
-2.6
-2.2
-1.5
Input Power
PIN
ΘJC
TB
28
30
dBm
°C/W
°C
Thermal Resistance
MMIC Base Temperature
4.3
Note 5
4. Operation outside of these ranges may reduce product reliability.
5. MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ
Power Derating Curve, Quiescent (No RF)
40
35
30
25
20
15
10
5
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2.7 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 10.0 V.
3. Adjust VGG to set IDQ, (approximately @ –2.2 V).
4. Set RF input.
5. Power down sequence in reverse. Turn VGG off
last.
0
-40
-20
0
20
40
60
80
100
120
140
160
180
Maximum Allowable Base Temperature [°C]
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted.
45
43
41
39
37
35
33
31
29
27
25
50
45
40
35
30
25
20
15
10
5
45
43
41
39
37
35
33
31
29
27
25
6V
Pout
PAE
8V
10V
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at VD=10V,
Pin=28dBm, and 25% IDSS
Figure 2. 1dB Compression Point vs. Frequency by Drain Voltage at 25% IDSS
45
43
41
39
37
35
33
31
29
27
25
45
43
41
39
37
35
33
31
29
27
25
-20ºC
33ºC
93ºC
6V
8V
10V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
Frequency (GHz)
Figure 4. Saturated Output Power vs. Frequency by Temperature at 10V and 25%
IDSS
Figure 3. Saturated Output Power vs. Frequency by Drain Voltage at 25% IDSS
42.00
40.00
38.00
36.00
34.00
32.00
30.00
28.00
26.00
24.00
22.00
22.00
20.00
18.00
16.00
14.00
20
6
5
4
3
2
1
18
16
14
12
10
8
Pout
12.00
PAE
10V
SSG
10.00
Input VSWR
OutputVSWR
IDS
8.00
6
6.00
4.00
2.00
4
2
0
30
40
50
60
70
80
90
100
110
120
130
140
150
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Junction Temperature (ºC)
Frequency (GHz)
Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain
Current vs. Junction Temperature at 10 V, 5.5 GHz, and 25% IDSS
Figure 5. Small Signal Gain and Input and Output VSWR vs. Frequency by Drain
Voltage at 25% IDSS
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted.
45
43
41
39
37
35
33
31
29
27
25
23
21
19
17
15
20.0
18.0
16.0
14.0
12.0
10.0
8.0
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
8 GHz
6.0
3 GHz
5.5 GHz
8 GHz
4.0
2.0
0.0
15
17
19
21
23
25
Output Power (dBm)
Figure 8. Gain vs. Output Power by Frequency at 10V and 25% IDSS
27
29
31
33
35
37
39
41
43
6
8
10
12
14
16
18
20
22
24
26
28
30
Input Power (dBm)
Figure 7. Output Power vs. Input Power by Frequency at 10V and 25% IDSS
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30
28
26
24
22
20
18
16
14
12
10
8
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
8 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
8 GHz
6
4
2
0
6
8
10
12
14
16
18
20
22
24
26
28
30
6
8
10
12
14
16
18
20
22
24
26
28
30
Input Power (dBm)
Input Power (dBm)
Figure 9. Power Added Efficiency vs. Input Power by Frequency at 10V and
25% IDSS
Figure 10. Drain Current vs. Input Power by Frequency at 10V and 25% IDSS
20.0
18.0
16.0
14.0
12.0
10.0
8.0
45
43
41
39
37
35
33
31
29
27
25
23
21
19
17
15
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
8 GHz
6.0
3 GHz
5.5 GHz
8 GHz
4.0
2.0
0.0
15
17
19
21
23
25
Output Power (dBm)
Figure 12. Gain vs. Output Power by Frequency at 8V and 25% IDSS
27
29
31
33
35
37
39
41
43
6
8
10
12
14
16
Input Power (dBm)
Figure 11. Output Power vs. Input Power by Frequency at 8V and 25% IDSS
18
20
22
24
26
28
30
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30
28
26
24
22
20
18
16
14
12
10
8
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
8 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
8 GHz
6
4
2
0
6
8
10
12
14
16
18
20
22
24
26
28
30
6
8
10
12
14
16
Input Power (dBm)
Figure 14. Drain Current vs. Input Power by Frequency at 8V and 25% IDSS
18
20
22
24
26
28
30
Input Power (dBm)
Figure 13. Power Added Efficiency vs. Input Power by Frequency at 8V and
25% IDSS
100
90
80
70
60
50
40
30
20
10
0
6 dBm
10 dBm
14 dBm
18 dBm
22 dBm
26 dBm
30 dBm
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Frequency (GHz)
Figure 15. Second Harmonic vs. Frequency by Input Power at 10V and 25% IDSS
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Figure 16. Fixture used to characterize MAAPGM0074-DIE
under CW stimulus.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
Mechanical Information
Chip Size: 5.204 x 6.550 x 0.356 mm
(204 x 258 x 14 mils)
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Figure 17. Die Layout
Bond Pad Dimensions
Pad
Pad No.
Size (mils)
Size (μm)
RF In and Out
1
100 x 200
4 x 8
DC Drain Supply Voltage VD1
DC Drain Supply Voltage VD2
DC Gate Supply Voltage VG1
DC Gate Supply Voltage VG2
2
3
4
5
200 x 150
500 x 200
150 x 150
150 x 125
8 x 6
20 x 8
6 x 6
6 x 5
6
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
Recommended Layout and Wire Bonding Configuration
In implementing the DC/ RF crossover shown, the following rules must applied.
1.
2.
3.
4.
the DC crossovers should approach and cross the RF trace at a 90 degree angle;
the printed DC traces that approach the RF line should be stopped 2 substrate heights from the RF line edge;
the rated current capability of the DC crossovers should be greater than the maximum current of the device; and
the wires or ribbons used to make the DC crossovers should clear the RF trace by ~ 1 substrate height.
Power Supply Sequencing:
Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier.
Die Handling:
Refer to Application Note AN3016. All Application Notes may be accessed by going to http://www.macom.com/
Application%20Notes/index.htm.
7
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000074-PED000
Amplifier, Power, 8W
2.0-8.0 GHz
Rev —
Preliminary Datasheet
Next Level Assembly Instructions:
Pedestal Die Attach: The following paragraphs detail recommendations and instructions for the integration of the die
on pedestal (IC assembly) and mating substrates to the next level assembly. These recommendations are summa-
rized pictorially in Figure 18.
To attach the die/pedestal assembly to the next level assembly, use a high thermal conductivity silver loaded epoxy.
Two epoxies are recommended for this purpose, Diemat (www.diemat.com) PNs DM6030HK and DM4030LD with
bulk thermal conductivities of 60 and 15 W/m-ºC, respectively. Silver-filled epoxies with conductivities < 10 W/m-ºC
are not recommended for use in attaching these IC assemblies.
DM6030HK is recommended for use when the coefficient of thermal expansion (CTE) of the material to which the IC
assembly is to be attached is similar to that of CuMo (CTE ~ 7ppm). A next level assembly attach material with a CTE
range of 4-10ppm would be acceptable. DM4030LD is recommended when the CTE of the next level assembly mate-
rial is significantly greater than CuMo, e.g, Copper and Aluminum with CTEs of 14 and 23 ppm, respectively.
Bondline thickness, the as-cured thickness of the silver epoxy layer between the IC assembly and next level assembly
attach surface, is a critical parameter in terms of device performance and reliability. Bondline thickness should be
maintained between 1 and 1.5 mils. A bondline thickness of < 1 mil reduces the sheer strength of the mechanical at-
tach. Bondline thicknesses > 1.5 mils impacts in an incremental fashion the junction temperature of the IC and
thereby the MTTF.
The pedestal thickness used in the IC assembly is set at 10 mils such that the final IC assembly thickness is ~ 14 mils
making it approximately planar with a mating substrate of 15 mil alumina, a thickness commonly used through X-band.
This surface planarity was an objective because it results in shorter RF bond wire lengths between the IC assembly
RF I/O and the mating substrate transmission line. Long bond wires can shift the load impedance required for ideal
power transfer. Shorter RF bond wires result in improved RF performance.
In any nominal microelectronic manufacturing environment, the process of silver epoxy attach of substrates and IC
assemblies to the next level assembly can result in variable epoxy squeeze-out or run-out at the substrate or IC as-
sembly peripheries. This variability, if not compensated for in the design of the overall assembly, can result in a high
number of assembly failures due to epoxy wicking. This wicking process can occur when a mating substrate and IC
assembly are placed too close to each other. To avoid this occurrence, a designed-in 5-10 mil spacing between the IC
assembly and mating substrates is recommended.
Wirebonding: Bond @ 160°C using standard ball or thermal compression wedge bond techniques. For DC pad con-
nections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although
ball bonds are also acceptable.
8
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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