MAAPGM0080-DIE [TE]
Amplifier, Power, 1 W 2-18 GHz; 放大器，电源， 1 W 2-18 GHz的
| 型号： | MAAPGM0080-DIE |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Amplifier, Power, 1 W 2-18 GHz |
| 文件： | 总7页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Amplifier, Power, 1 W
2-18 GHz
MAAPGM0080-DIE
Rev -
Preliminary Datasheet
Features
♦ 1 Watt Saturated Output Power Level
♦ Variable Drain Voltage (6-10V) Operation
♦ MSAG® Process
Description
The MAAPGM0080-DIE is a 2-stage 1 W distributed power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms on both
the input and output. It can be used as a power amplifier stage or as a
driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Primary Applications
♦ Electronic Warfare
♦ Ultra Wideband (UWB)
♦ Test Instrumentation
Also Available in:
SAMPLES
Description
Plastic
Sample Board (Die)
Mechanical Sample (Die)
Part Number
MAAP-000080-PKG003
MAAP-000080-SMB004
MAAP-000080-MCH000
Electrical Characteristics: TB = 10°C1, Z0 = 50Ω, VDD = 10V, IDQ = 750mA2, Pin = 22 dBm, RG = 130Ω
Parameter
Symbol
Typical
2.0-18.0
30
Units
GHz
dBm
dBm
dB
Bandwidth
f
Output Power
POUT
P1dB
G
1-dB Compression Point
Small Signal Gain
Power Added Efficiency
29.5
11.5
11
%
PAE
VSWR
Input VSWR
Output VSWR
1.5:1
1.8:1
5
VSWR
IGG
Gate Current
mA
mA
Drain Current
800
IDD
1. TB = MMIC Base Temperature
2. Adjust VGG between –2.6 and –1.2V to achieve specified Idq.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 1 W
2-18 GHz
MAAPGM0080-DIE
Rev -
Preliminary Datasheet
Maximum Ratings3
Parameter
Absolute Maximum
Units
Symbol
PIN
Input Power
27.0
+12.0
-3.0
dBm
V
Drain Supply Voltage
VDD
Gate Supply Voltage
V
VGG
IDQ
PDISS
TJ
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
0.78
A
7.8
W
°C
°C
170
Storage Temperature
TSTG
-55 to +150
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions4
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
Gate Voltage
VDD
VGG
6.0
10.0
-2.0
10.0
-1.2
V
V
-2.6
Input Power
PIN
ΘJC
TB
22.0
13.1
25.0
dBm
°C/W
°C
Thermal Resistance
MMIC Base Temperature
Note 5
4. Operation outside of these ranges may reduce product reliability.
5. MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ
Power Derating Curve, Quiescent (No RF)
9
8
7
6
5
4
3
2
1
0
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2.7 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 10.0 V.
3. Adjust VGG to set IDQ, (approximately @ –2.0 V).
4. Set RF input.
0
20
40
60
80
100
120
140
160
180
MMIC Base Temperature (ºC)
5. Power down sequence in reverse. Turn VGG off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 1 W
2-18 GHz
MAAPGM0080-DIE
Rev -
Preliminary Datasheet
All Data is at 10ºC MMIC base temperature, CW stimulus, unless otherwise noted.
35
33
31
29
27
25
23
21
19
17
15
35
33
31
29
27
25
23
21
19
17
15
6V
6V
8V
8V
10V
10V
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency
at Pin = 22dBm, and IDSQ=740mA
Figure 2. 1dB Compression Point and Drain Voltage at IDSQ=750mA
35
35
33
31
29
27
25
23
21
19
17
15
33
31
29
27
25
23
21
19
17
15
-20ºC
50ºC
6V
8V
120ºC
10V
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Frequency (GHz)
Figure 3. Saturated Output Power vs. Frequency and Drain Voltage
Figure 4. Saturated Output Power vs. Frequency and Temperature
at VD=10V and IDSQ=750mA.
35
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
20
18
16
14
12
10
8
6
5
4
3
2
1
6V
33
31
29
27
25
23
21
19
17
15
13
11
9
8V
10V
Input VSWR
Output VSWR
Pout
SSG
PAE
IDS
6
4
2
7
0
5
2
3
4
5
6
7
8
9
10
Frequency (GHz)
Figure 5. Small Signal Gain and Input and Output VSWR at
DSQ=750mA.
11
12
13
14
15
16
17
18
0
10
20
30
40
50
60
70
80
90
100
110
120
Junction Temperature (ºC)
Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and
Drain Current vs. Junction Temperature at 10V, 10GHz, and 750mA.
I
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 1 W
2-18 GHz
MAAPGM0080-DIE
Rev -
Preliminary Datasheet
All Data is at 10ºC MMIC base temperature, CW stimulus, unless otherwise noted.
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
20
18
16
14
12
10
8
2 GHz
8 GHz
12 GHz
18 GHz
6
2 GHz
4
12 GHz
18 GHz
2
0
10
12
14
16
18
20
22
24
26
28
30
32
0
2
4
6
8
10
12
14
16
18
20
22
24
Output Power (dBm)
Input Power (dBm)
Figure 7. Output Power vs. Input Power and Frequency at 10V and 750mA
Figure 8. Gain vs. Output Power and Frequency at 10V and 750mA.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
20
18
16
14
12
10
8
2 GHz
8 GHz
12 GHz
18 GHz
6
2 GHz
8 GHz
12 GHz
18 GHz
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
0
2
4
6
8
10
12
14
16
18
20
22
24
Input Power (dBm)
Input Power (dBm)
Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and
IDSQ=750mA.
Figure 10. Drain Current vs. Input Power and Frequency at 10V and 750mA.
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
20
18
16
14
12
10
8
2 GHz
8 GHz
12 GHz
18 GHz
6
4
2 GHz
12 GHz
18 GHz
2
0
0
2
4
6
8
10
Input Power (dBm)
Figure 11. Output Power vs. Input Power and Frequency at 8V and 750mA.
12
14
16
18
20
22
24
10
12
14
16
18
Output Power (dBm)
Figure 12. Gain vs. Output Power and Frequency at 8V and 750mA.
20
22
24
26
28
30
32
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 1 W
2-18 GHz
MAAPGM0080-DIE
Rev -
Preliminary Datasheet
All Data is at 10ºC MMIC base temperature, CW stimulus, unless otherwise noted.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
20
18
16
14
12
10
8
2 GHz
8 GHz
12 GHz
18 GHz
6
2 GHz
8 GHz
12 GHz
18 GHz
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
0
2
4
6
8
10
Input Power (dBm)
Figure 14. Drain Current vs. Input Power and Frequency at 8V and 750mA
12
14
16
18
20
22
24
Input Power (dBm)
Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and
IDSQ=750mA.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 1 W
2-18 GHz
MAAPGM0080-DIE
Rev -
Preliminary Datasheet
Mechanical Information
Chip Size: 3.150 x 3.150 x 0.075 mm (124 x 124 x 3 mils)
124.02
84.96
OUT
24.63
IN
0.00
Chip edge to bond pad dimensions are shown to the center of the bond pad (mils).
Figure 1. Die Layout
Bond Pad Dimensions
Pad
Size (mils)
Size (μm)
RF In and Out
100 x 200
200 x 150
4 x 8
8 x 6
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
150 x 150
6 x 6
6
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 1 W
2-18 GHz
MAAPGM0080-DIE
Rev -
Preliminary Datasheet
Assembly and Bonding Diagram
VDD
0.1 μF
100 pF
RFOUT
RFIN
100 pF
VGG
130 Ω
0.1 μF
Figure 2. Recommended operational configuration. Wire bond as shown.
Assembly Instructions:
Die attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 °C
to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compres-
sion wedge bond techniques. For DC pad connections, use either ball or
wedge bonds. For best RF performance, use wedge bonds of shortest
length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying posi-
tive bias to VDD to prevent
7
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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