MADL-0110_15 [TE]
Silicon PIN Limiter Diodes;
| 型号： | MADL-0110_15 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Silicon PIN Limiter Diodes |
| 文件： | 总5页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MADL-0110 Series
Silicon PIN Limiter Diodes
V1
Chip Outline
Features
•
•
•
•
•
•
•
Low Insertion Loss and Noise Figure
High Peak and Average Operating Power
Various P1dB Compression Powers
Low Flat Leakage Power
Proven Reliable, Silicon Nitride Passivation
RoHS Compliant
A Square
Anode
B
3 mil Anode Contact Area
Description
M/A-COM Technology Solutions manufactures a series
of silicon PIN limiter diodes with small and medium
I-region lengths which are specifically designed for high
signal applications. The devices are designed to provide
low insertion loss, at zero bias, as well as low flat
leakage power with fast signal response/recovery times.
C
Applications
The MADL-0110 Series of PIN limiter diodes are
designed for use in passive limiter control circuits to
protect sensitive receiver components such as low noise
amplifiers (LNA), detectors, and mixers covering the 10
MHz to 18 GHz frequency range.
Full Area Cathode
ODS
Dimension
mils
mm
A
B
C
15 ± 2
3
.381 ± .51
0.076
Absolute Maximum Ratings1 TAMB = 25°C
134
7 ±1*
.178 ± .025
(Unless otherwise specified)
Parameter
Absolute Maximum
100mA
Forward Current
Operating Temperature
Storage Temperature
Junction Temperature
-55°C to +125°C
-55°C to +150°C
+175°C
RF Peak & C.W. Incident Power Per Performance Table
Mounting Temperature +320°C for 10 sec.
Note:
1. Exceeding any of the above ratings may cause
permanent damage.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MADL-0110 Series
Silicon PIN Limiter Diodes
V1
Un-Packaged Die Electrical Specifications at TAMB = 25°C
Nominal Characteristics
I-Region Contact Thermal
Carrier
Lifetime
Part Number1
Minimum Maximum
Minimum Maximum
Maximum
Thickness Diameter Resistance
Cj0V
Cj0V
VREV
VREV
RS 10mA IFOR =10mA
500 MHz IREV = -6mA
1 MHz
1 MHz
10 µA
10 µA
VR
VR
Ohms2
nS2
µm
mils
°C/W1
pF
pF
MADL-011009-01340W
MADL-011010-01340W
MADL-011011-01340W
20
35
0.16
0.23
1.50
10
2
3.0
175
30
60
50
75
0.17
0.05
0.24
0.17
1.50
2.30
15
10
3
4
3.0
3.0
150
150
Note:
1. For other available limiter devices consult the MA4L Series limiter datasheet.
2. Test performed with the chip mounted in an ODS-30 package.
*Nominal High Signal Performance at TAMB = 25°C
Incident Peak Incident Peak Incident Peak
Recovery Time
3 dB
Maximum
Incident
Maximum
CW
Power for
Power for 10dB
Limiting
Power for
1dB Limiting
15dB Limiting
Part Number
Freq. = 9.4GHz Freq. = 9.4GHz Freq. = 9.4GHz Peak Power = 50W Peak Power Input Power
dBm
dBm
dBm
nS
Watts
Watts
MADL-011009-01340W
MADL-011010-01340W
MADL-011011-01340W
8
31
34
38
41
44
50
10
25
75
90
3
4
5
11
15
125
200
*See page 3 for high signal performance parameter notes.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MADL-0110 Series
Silicon PIN Limiter Diodes
V1
Typical High Signal Peak Power Performance in a Single Shunt 50Ω Circuit
Typical Peak Power Performance for Single Shunt Limiter In a 50Ω System
Frequency = 9.4GHz, Pulse Width = 1µS, Duty Cycle = .001%
High Signal Performance: Measured in a single shunt diode (die) configuration attached directly to the gold
plated RF ground of a 50Ω, SMA connectorized, test fixture using 2 mil thick conductive silver epoxy . Chip
anode contact is thermo-compression wire bonded using a 1 mil. diameter gold wire onto a 7.2 mil thick Rogers
5880 Duroid microstrip trace. A shunt coil provides the D.C. return.
Test frequency = 9.4 GHz
RF pulse width = 1.0 µS, 0.001% duty cycle.
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MADL-0110 Series
Silicon PIN Limiter Diodes
V1
Application Circuits
Typical +60dBm Peak Power, 1µS P.W., 0.001% Duty Cycle, +20dBm Flat Leakage Limiter Circuit
Typical +50dBm Peak Power, 1µS P.W., 0.001% Duty Cycle, +20dBm Flat Leakage Limiter Circuit
MADL-011010-01340W
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MADL-0110 Series
Silicon PIN Limiter Diodes
V1
Notes for Specification and Nominal High Signal Performance Tables:
1) Maximum Series Resistance: RS, is measured at 500 MHz in the ODS-30 package and is equivalent to the
total diode resistance: RS = Rj (Chip Junction Resistance) + RO (Package Ohmic Resistance)
2) Nominal C.W. Thermal Resistance: ӨTH is measured in a ceramic pill package, ODS-30, mounted to a
metal (infinite) heatsink. Chip only thermal resistance values are approximately 2°C/W less than the ODS-30
listed package values in the specifications table.
3) Maximum High Signal Performance: Measured with a single shunt diode (die) attached directly to the gold
plated RF housing ground with 2 mil thick conductive silver epoxy in a 50Ω, SMA, connectorized test fixture.
Chip anode contact is thermo-compression wire bonded using a 1 mil. diameter gold wire onto a 7.2 mil thick
Rogers 5880 Duroid microstrip trace. A shunt coil provides the D.C. return. Test frequency = 9.4 GHz,
RF pulse width = 1.0 µS, Duty Cycle = 0.001%.
4) Maximum C.W. Incident Power: Measured in a 50Ω, SMA, connectorized housing @ 4GHz utilizing a TWT
amplifier and the same single diode assembly configuration as stated in Note 3 above.
Die Handling and Mounting Information
Handling: All semiconductor chips should be handled with care in order to avoid damage or contamination
from perspiration, salts, and skin oils. For individual die, the use of plastic tipped tweezers or vacuum pick up
tools is strongly recommended. Bulk handling should ensure that abrasion and mechanical shock are minimized.
Die Attach: The die have Ti-Pt-Au back and anode metal, with a final gold thickness of 1.0µm. Die can be
mounted with a gold-tin, eutectic solder perform or conductive silver epoxy. The metal RF and D.C. ground plane
mounting surface must be free of contamination and should have a surface flatness or < ± 0.002”.
• Eutectic Die Attachment Using Hot Gas Die Bonder: An 80/20, gold / tin eutectic solder perform is
recommended with a work surface temperature of 255°C and a tool tip temperature of 220°C. When the hot
gas is applied, the temperature at the tool tip should be approximately 290°C. The chip should not be
exposed to a temperatures in excess of 320°C for more than 10 seconds.
• Eutectic Die Attachment Using Reflow Oven: Refer to Application Note M538, “Surface Mounting
Instructions”.
• Epoxy Die Attachment: A thin, controlled amount of electrically conductive silver epoxy should be applied,
approximately 1-2 mils thick to minimize ohmic and thermal resistances. A small epoxy fillet should be visible
around the outer perimeter of the chip after placement to ensure full area coverage. Cure the conductive
silver epoxy per the manufacturer’s schedule, typically 150˚C for 1 hour.
Wire Bonding: The chip’s anode metallization stack is comprised of Ti/Pt/Au with a final gold thickness of
1.0µm. Thermo-compression wedge bonding using a .7 to 1 mil diameter gold wire is recommended. The heat
stage temperature should be set to approximately 200°C with a bonding tip temperature of 125˚C and a force of
18 to 40 grams. Use of ultrasonic energy is not advised but if necessary it should be adjusted to the minimum
required to achieve a good bond. Excessive energy or force applied to the top contact will cause the metallization
to dislodge and lift off. Automatic ball bonding may also be used.
See Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices” for more detailed handling and
assembly information.
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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