MAGX-000035-010000 [TE]
GaN on SiC HEMT Power Transistor Common-Source configuration; 氮化镓HEMT的SiC功率晶体管共源配置
| 型号： | MAGX-000035-010000 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN on SiC HEMT Power Transistor Common-Source configuration |
| 文件： | 总8页 (文件大小：609K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
Rev. V3
Features
MAGX-000035-010000 (Flanged)
GaN Depletion-Mode HEMT Microwave
Transistor
Common-Source configuration
No internal matching
Broadband Class AB operation
RoHS* Compliant
+50 V Typical Operation
MTTF = 600 years
Description
MAGX-000035-01000S (Flangeless)
The MAGX-000035-01000X is a gold-metalized
unmatched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor suitable for a variety of RF
power amplifier applications. Using state of the art
wafer fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over multiple octave bandwidths for
today’s demanding application needs.
The MAGX-000035-01000X is constructed with
either a flanged or flangeless ceramic package
which provides excellent thermal performance. High
breakdown voltages allow for reliable and stable
operation in extreme mismatched load conditions
compared with older semiconductor technologies.
Ordering Information
Part Number
Package
10 W GaN Power
Transistor (Flanged)
MAGX-000035-010000
MAGX-000035-01000S
MAGX-000035-SB2PPR
MAGX-000035-SB3PPR
Applications
General purpose for pulsed or CW applications:
Commercial Wireless Infrastructure (WCDMA,
LTE, WIMAX)
Civilian and Military Radar
Military and Commercial Communications
Public Radio
10 W GaN Power
Transistor (Flangeless)
1.2-1.4 GHz Evaluation
Board (Flanged)
1.2-1.4 GHz Evaluation
Board (Flangeless)
Industrial, Scientific and Medical
SATCOM
Instrumentation
Avionics
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
Rev. V3
Absolute Maximum Ratings1, 2, 3
Parameter
Limit
+65 V
Supply Voltage (VDD
)
Supply Voltage (VGG
)
-8 to 0 V
800 mA
25 dBm
200ºC
Supply Current (IDD
)
Input Power (PIN)
Junction/Channel Temp
MTTF (TJ < 200 °C)
600 years
18 W
Continuous Power Dissipation (PDISS) at 85 ºC
Pulsed Power Dissipation (PAVG) at 85 ºC
Thermal Resistance, (TJ = 200 ºC), CW
Thermal Resistance, (TJ = 200 ºC), Pulsed 500 μs, 10% Duty cycle
Operating Temp
43 W
9.2 ºC/W
3.4 ºC/W
-40 to +95ºC
-65 to +150ºC
250 V
Storage Temp
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
250 V
1. Exceeding any one or combination of these limits may cause permanent damage to this device
2. Junction temperature directly affects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime.
3. For saturated performance it is recommended that the sum of (3*Vdd + abs(Vgg)) <175 V.
DC Characteristics
Parameter
Test Conditions
GS = -8 V, VDS = 175 V
Symbol Min.
Typ.
Max.
10.8
-2
Units
mA
V
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V
IDS
VGS (TH)
GM
-
-
-3
-
VDS = 5 V, ID = 2 mA
-5
VDS = 5 V, ID = 500 mA
5.5
-
S
DC Characteristics
Parameter
Test Conditions
Symbol Min.
Typ.
4.4
Max.
Units
pF
Input Capacitance
VDS = 0 V, VGS = -8 V, F = 1 MHz
VDS = 50 V, VGS = -8 V, F = 1 MHz
VDS = 50 V, VGS = -8 V, F = 1 MHz
CISS
COSS
CRSS
-
-
-
-
-
-
Output Capacitance
Reverse Transfer Capacitance
1.9
pF
0.2
pF
2
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
Rev. V3
Electrical Specifications: TA = 25 ºC
Parameter
Test Conditions
Symbol Min. Typ. Max.
Units
RF FUNCTIONAL TESTS
CW Output Power (P2dB)
1.3 GHz
VDD = 50 V, IDQ = 25 mA, PIN = 0.3 W
POUT
10
18
11
-
W
Power Gain (P2dB) 1.3 GHz
Drain Efficiency @ 1.3 GHz
VDD = 50 V, IDQ = 25 mA
GP
19
45
dB
%
VDD = 50 V, IDQ = 25 mA, POUT = 10 W
ηD
Load Mismatch Stability
Load Mismatch Tolerance
VDD = 50 V, IDQ = 25 mA, PIN = 0.3 W
VSWR-S 5:1
VSWR-T 10:1
-
-
-
-
-
-
V
DD = 50 V, IDQ = 25 mA, PIN = 0.3 W
Test Fixture Impedance
Freq. (MHz)
1300
ZIN-OPT (Ω)
ZOUT-OPT (Ω)
3.6 + j6.9
38.3 + j20.5
3
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
Rev. V3
1.2—1.4 GHz Typical CW Performance
Freq.
(GHz)
POUT
(dBm)
POUT
(W)
Gain
(dB)
ID
(A)
Eff.
(%)
VD
(V)
IDQ
(mA)
1.20
1.30
1.40
40.0
40.0
40.0
10.0
10.0
10.0
17.5
18.4
17.8
0.49
0.40
0.50
41
44
40
50
-
25
-
-
-
3.3 GHz Typical CW Performance
Freq.
(GHz)
P2dB
(dBm)
POUT
(W)
Gain
(dB)
ID
(A)
Eff.
(%)
VD
(V)
IDQ
(mA)
3.30
40.3
10.7
16.2
0.38
57
50
25
1.2—1.4 GHz Test Fixture
4
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
Rev. V3
1.2—1.4 GHz Performance With Pulsed Signal
VD = 50 V
IDQ = 25 mA
Pulse = 100 μs
Duty = 15%
5
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
Rev. V3
1.2—1.4 GHz Matching Circuit For Rogers RT6010.2LM
6
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
Rev. V3
Outline Drawings
MAGX-000035-010000
MAGX-000035-01000S
7
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
Rev. V3
CORRECT DEVICE SEQUENCING
TURNING THE DEVICE ON
TURNING THE DEVICE OFF
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (50 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
8
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
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