MASW-000555-13570G [TE]

SP5T AlGaAs PIN Diode Switch RoHS Compliant; SP5T铝镓砷PIN二极管开关符合RoHS
MASW-000555-13570G
型号: MASW-000555-13570G
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

SP5T AlGaAs PIN Diode Switch RoHS Compliant
SP5T铝镓砷PIN二极管开关符合RoHS

二极管 开关
文件: 总7页 (文件大小:125K)
中文:  中文翻译
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MA4AGSW5  
SP5T AlGaAs PIN Diode Switch  
RoHS Compliant  
Rev. V3  
FEATURES  
Ultra Broad Bandwidth: 50 MHz to 50 GHz  
Functional Bandwidth : 50 MHz to 70 GHz  
1.7dB Insertion Loss at 50 GHZ  
35 dB Isolation at 50 GHz  
Low Current consumption.  
-10mA for low loss state  
+10mA for Isolation state  
M/A-COM’s unique AlGaAs hetero-junction  
anode technology.  
Silicon Nitride Passivation  
Polymer Scratch protection  
DESCRIPTION  
M/A-COM’s MA4AGSW5 is an Aluminum-Gallium-  
Arsenide, single pole, five throw (SP5T), PIN diode  
switch. The switch features enhanced AlGaAs anodes  
which are formed using M/A-COM’s patented hetero-  
junction technology. AlGaAs technology produces a  
switch with less loss than a device fabricated using  
conventional GaAs processes. As much as a 0.3 dB  
reduction in insertion loss can be realized at 50 GHz.  
This device is fabricated on an OMCVD epitaxial wafer  
using a process designed for high device uniformity  
and extremely low parasitics. The diodes within the  
chip exhibit low series resistance, low capacitance,  
and fast switching speed. They are fully passivated  
with silicon nitride and have an additional polymer  
layer for scratch protection. The protective coating  
prevents damage during handling and assembly to the  
diode junction and the chip anode air-bridges. Off chip  
bias circuitry is required.  
Yellow areas indicate bond pads  
Absolute Maximum Ratings @ TAMB = +25°C  
Parameter  
Maximum Rating  
-55°C to +125°C  
-55°C to +150°C  
+23dBm C.W.  
25V  
APPLICATIONS  
Operating Temperature  
Storage Temperature  
Incident C.W. RF Power  
Breakdown Voltage  
The high electron mobility of AlGaAs and the low  
capacitance of the PIN diodes used makes this switch  
ideal for fast response, high frequency, multi-throw  
switch designs where the series capacitance in each  
off-arm will load the input. AlGaAs PIN diode switches  
are an ideal choice for switching arrays in radar  
systems, radiometers, test equipment and other multi-  
assembly components.  
Bias Current  
± 25mA  
Assembly Temperature  
Junction Temperature  
+300°C < 10 sec  
+175°C  
Maximum combined operating conditions for RF Power, D.C.  
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @  
+85°C.  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MA4AGSW5  
SP5T AlGaAs PIN Diode Switch  
RoHS Compliant  
Rev. V3  
Electrical Specifications @ TA = 25°C, +/-10mA bias current  
(On-wafer measurements)  
FREQUENCY  
BAND  
0.05 - 18 GHz  
18 - 50 GHz  
0.05 - 18 GHz  
18 - 50 GHz  
0.05 - 18 GHz  
18 - 50 GHz  
0.05 - 18 GHz  
18 - 50 GHz  
0.05 - 18 GHz  
18 - 50 GHz  
FREQUENCY BAND  
0.05 - 18 GHz  
18 - 50 GHz  
0.05 - 18 GHz  
18 - 50 GHz  
0.05 - 18 GHz  
18 - 50 GHz  
0.05 - 18 GHz  
18 - 50 GHz  
0.05 - 18 GHz  
18 - 50 GHz  
FREQUENCY BAND  
0.05 - 18 GHz  
18 - 50 GHz  
0.05 - 18 GHz  
18 - 50 GHz  
0.05 - 18 GHz  
18 - 50 GHz  
0.05 - 18 GHz  
18 - 50 GHz  
0.05 - 18 GHz  
18 - 50 GHz  
RF PARAMETER  
MAX  
UNITS  
PORT  
J2 to J1  
J3 to J1  
J4 to J1  
J5 to J1  
BIAS  
1.4  
1.9  
1.4  
1.9  
1.4  
1.9  
1.4  
1.9  
1.4  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
UNITS  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
UNITS  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
-10 mA @ J2, +10 mA @ J3, J4, J5, J6  
-10 mA @ J3, +10 mA @ J2, J4, J5, J6  
-10 mA @ J4, +10 mA @ J2, J3, J5, J6  
-10 mA @ J5, +10 mA @ J2, J3, J4, J6  
INSERTION LOSS  
RF PARAMETER  
ISOLATION*  
J6 to J1  
PORT  
-10 mA @ J6, +10 mA @ J2, J3, J4, J5  
BIAS  
1.9  
MIN  
35.0  
30.0  
35.0  
30.0  
35.0  
30.0  
35.0  
30.0  
35.0  
30.0  
MIN  
12.0  
12.0  
12.0  
12.0  
12.0  
12.0  
12.0  
12.0  
12.0  
12.0  
J2 to J1  
-10 mA @ J6, +10 mA @ J3, J4, J5, J2  
J3 to J1  
J4 to J1  
J5 to J1  
-10 mA @ J6, +10 mA @ J2, J4, J5, J2  
-10 mA @ J6, +10 mA @ J2, J3, J5, J2  
-10 mA @ J6, +10 mA @ J2, J3, J4, J2  
J6 to J1  
PORT  
-10 mA @ J2, +10 mA @ J2, J3, J4, J6  
BIAS  
RF PARAMETER  
J2 to J1  
-10 mA @ J2, +10 mA @ J3, J4, J5, J6  
J3 to J1  
J4 to J1  
J5 to J1  
J6 to J1  
-10 mA @ J3, +10 mA @ J2, J4, J5, J6  
-10 mA @ J4, +10 mA @ J2, J3, J5, J6  
-10 mA @ J5, +10 mA @ J2, J3, J4, J6  
-10 mA @ J6, +10 mA @ J2, J3, J4, J5  
INPUT/OUTPUT  
RETURN LOSS  
*Note: Isolation is measured through (3) diodes from common port ( input ) to selected output port with (1) opposite series  
junction diode in low loss. Isolation for (2) diodes from common port ( Input ) to selected output with the same series junction  
diode port in low loss = 22 dB Typical.  
Typical  
Value  
Parameter  
F ( GHz )  
RF Ports  
Test Conditions  
Units  
Switching Speed*  
( 10-90 % RF Voltage )  
10.0  
J1 to J2,J3,J4,J5,J6 +/- 5V TTL Compatible PIN Diode Driver  
15  
nS  
*Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5V TTL compatible  
driver. Driver output parallel RC network uses a capacitor between 390 pF-560 pF and a resistor between 150-220 ohms to  
achieve 15 ns rise and fall times.  
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MA4AGSW5  
SP5T AlGaAs PIN Diode Switch  
RoHS Compliant  
Rev. V3  
Typical R.F. Performance (Probed on Wafer) @ +25°C  
Isolation  
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MA4AGSW5  
SP5T AlGaAs PIN Diode Switch  
RoHS Compliant  
Rev. V3  
Typical RF Performance (Probed on wafer) @ +25°C  
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MA4AGSW5  
SP5T AlGaAs PIN Diode Switch  
RoHS Compliant  
Rev. V3  
Operation of the MA4AGSW5 Switch  
The simultaneous application of a negative DC current to the low loss port and positive DC current to the  
remaining isolated switching ports is required for the operation of the MA4AGSW5, AlGaAs, PIN switch. The  
backside area of the die is the RF and DC return ground plane. The DC return is connected to the common port  
J1. The forward bias voltage at J2, J3, J4,J5 & J6 will not exceed ±1.6 volts and is typically ± 1.4 volts with supply  
current of ± 30mA). In the low loss state, the series diode must be forward biased and the shunt diode reverse  
MA4AGSW5 Schematic and Driver Bias Connections  
TYPICAL DRIVER CONNECTIONS  
CONTROL LEVEL (DC CURRENT)  
J2 J3 J4 J5 J6  
+10mA Low Loss Isolation  
CONDITION OF RF OUTPUT  
J2-J1  
J3-J1  
J4-J1  
J5-J1  
J6-J1  
-10mA +10mA +10mA +10mA  
+10mA -10mA +10mA +10mA  
+10mA +10mA -10mA +10mA  
+10mA +10mA +10mA -10mA  
+10mA +10mA +10mA +10mA  
Isolation  
Isolation  
Isolation  
Isolation  
Isolation  
Isolation  
+10mA  
+10mA  
+10mA  
-10mA  
Isolation Low Loss Isolation  
Isolation  
Isolation  
Isolation  
Isolation Low Loss Isolation  
Isolation  
Isolation  
Isolation Low Loss Isolation  
Isolation Isolation Low Loss  
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MA4AGSW5  
SP5T AlGaAs PIN Diode Switch  
RoHS Compliant  
Rev. V3  
Chip Dimensions and Bonding Pad Locations (In Yellow)  
H
Dimensions  
mils  
mm  
Location  
min  
60.0  
63.2  
29.7  
15.2  
32.2  
6.5  
25.7  
3.7  
3.9  
max  
61.2  
64.4  
30.9  
16.0  
33.0  
7.2  
26.5  
4.3  
4.3  
min  
max  
1.524  
1.605  
0.754  
0.386  
0.818  
0.165  
0.653  
0.094  
0.099  
1.555  
1.636  
0.785  
0.406  
0.838  
0.183  
0.673  
0.109  
0.109  
A
B
C
D
E
F
G
H
Pads  
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MA4AGSW5  
SP5T AlGaAs PIN Diode Switch  
RoHS Compliant  
Rev. V3  
ASSEMBLY INSTRUCTIONS  
CLEANLINESS  
The chip should be handled in a clean environment.  
STATIC SENSITIVITY  
This device is considered ESD Class 1A, HBM. Proper ESD techniques should be used during handling.  
GENERAL HANDLING  
The protective polymer coating on the active areas of the die provides scratch and impact protection,  
particularly for the metal air bridge, which contacts the diode’s anode. Die should primarily be handled with  
vacuum pickup tools, or alternatively with plastic tweezers.  
ASSEMBLY TECHNIQUES  
The MA4AGSW5, AlGaAs device is designed to be mounted with electrically conductive silver epoxy or with a  
low temperature solder perform, which does not have a rich tin content.  
SOLDER DIE ATTACH  
Only solders which do not scavenge gold, such as 80/20, Au/Sn or Indalloy #2 is recommended. Do not  
expose die to temperatures greater than 300°C for more than 10 seconds.  
ELECTRICAL CONDUCTIVE EPOXY DIE ATTACH  
Use a controlled thickness of approximately 2 mils for best electrical conductivity and lowest thermal  
resistance. Cure epoxy per manufacturer’s schedule. Typically 150°C for 1 hour.  
RIBBON/WIRE BONDING  
Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads.  
A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible for the  
lowest inductance and best microwave performance. For more detailed handling and assembly  
instructions, see Application Note M541, “Bonding and Handling Procedures for Chip Diode  
Devices” at www.macom.com.  
Ordering Information  
Part Number  
Packaging  
MA4AGSW5  
Waffle Pack  
Gel Pack  
MASW-000555-13570G  
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

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