MASW-002103-13630G [TE]
HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz; HMICTM硅PIN二极管SPDT开关50兆赫 - 20 GHz的
| 型号： | MASW-002103-13630G |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz |
| 文件： | 总8页 (文件大小：374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MASW-002103-1363
HMICTM Silicon PIN Diode SPDT Switch
50 MHz - 20 GHz
Rev. V4
Features
•
•
•
•
•
•
•
•
•
•
•
Specified from 50 MHz to 20 GHz
Usable up to 26 GHz
Low Insertion Loss
High Isolation
Low Parasitic Capacitance and Inductance
RoHS Compliant Surmount™ Package
Rugged, Fully Monolithic
Glass Encapsulated Construction
Up to +38 dBm C.W. Power Handling1 @ +25°C
Silicon Nitride Passivation
Polymer Scratch Protection
Functional Schematic
J3
Description
MA-COM’s MASW-002103-1363 is a Surmount™
broadband monolithic SPDT switch using series and
shunt connected silicon PIN diodes. This part is
designed for use as a moderate signal, high
performance switch in applications up to 20 GHz.
This Surface Mount chipscale configuration is
optimized for broadband performance with minimal
associated parasitics usually associated with hybrid
MMIC designs incorporating beam lead and PIN
diodes that require chip and wire assembly.
J1
J2
The MASW-002103-1363 is fabricated using
M/A-COM’s patented HMIC™ (Heterolithic
Microwave Integrated Circuit) process, US Patent
5,268,310. This process allows the incorporation of
silicon pedestals that form series and shunt diodes
or vias by imbedding them in low loss, low
dispersion glass. By using small spacing between
elements, this combination of silicon and glass gives
HMIC devices low loss and high isolation
performance through low millimeter frequencies.
Pin Configuration 2
Pin
Function
J1
J2
RFC
RF1
J3
RF2
Selective backside metalization is applied producing
a surface mount device. The topside is fully
encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact
protection. These protective coatings prevent
damage to the junction and the anode airbridge
during handling and assembly.
2. The exposed pad centered on the chip bottom must be
connected to RF and DC ground.
Ordering Information
Part Number
Package
MASW-002103-13630G
MASW-002103-13635P
MASW-002103-13630P
50 piece gel pack
500 piece reel
3000 piece reel
1. Power Handling Testing performed @ 2GHz
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-002103-1363
HMICTM Silicon PIN Diode SPDT Switch
50 MHz - 20 GHz
Rev. V4
Electrical Specifications: TA = 25°C, PIN = 0 dBm, Z0 = 50 Ω, 20mA/-10V
Parameter
Frequency
Units
Min.
Typ.
Max.
6 GHz
13 GHz
20 GHz
—
—
—
0.55
0.80
1.05
0.63
0.93
1.25
Insertion Loss
dB
6 GHz
13 GHz
20 GHz
45
33
23
52
38
27
—
—
—
Input to Output Isolation
dB
dB
6 GHz
13 GHz
20 GHz
20
17.3
16.5
25
23
23
—
—
—
Return Loss
Switching Speed 3
Voltage Rating 4
—
—
ns
V
—
—
—
20
—
36
—
80
—
Input 0.1dB Compression Point
2 GHz
dBm
3. Typical Switching Speed measured fro 10% to 90 % of detected RF signal driven by TTL compatible drivers.
4. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.5 uA maximum @ -80 volts.
Absolute Maximum Ratings 5,6
Functional Schematic
Parameter
Absolute Maximum
Operating Temperature
Storage Temperature
Junction Temperature
-65 °C to +125 °C
-65 °C to +150 °C
+175 °C
Applied Reverse Voltage
|-80 V|
38dBm CW @ 2GHz, 25ºC
33dBm CW @ 20GHz, 25ºC
RF CW Incident Power
Bias Current +25°C
± 50 mA
Max Operating Conditions for combination RF
Pwr, DC Bias, & Temp: 33dBm CW @ 20mA per
Diode @ 85ºC @ 2GHz
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. M/A-COM does not recommend sustained operation near
these survivability limits.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These devices are rated at Class 1A Human Body
Model. Proper ESD control techniques should be
used when handling these devices.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-002103-1363
HMICTM Silicon PIN Diode SPDT Switch
50 MHz - 20 GHz
Rev. V4
Typical Small Signal Performance at +25°C (On-Wafer RF Test)
MASW-002103-1363 Insertion Loss
Forward Bias (On-arm): -10V, -20mA,
Reverse Bias (Off-arm): 20mA
MASW-002103-1363 Isolation
Forward Bias (On-arm):-10V, -20mA,
Reverse Bias (Off-arm): 20mA
0.00
-0.20
-0.40
-0.60
-0.80
-1.00
-1.20
-1.40
-1.60
-1.80
-2.00
0.00
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Frequency (GHz)
Frequency (GHz)
MASW-002103-1363 Return Loss
Forward Bias (On-arm): -10V, -20mA,
Reverse Bias (Off-arm): 20mA
0.00
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
-45.00
Input J1 to J2
Input J1 to J3
Output J2
Output J3
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Freq [GHz]
Typical Power Performance at +25°C
MASW-002103-1363 Maximum Input Power Curve
Baseplate Temperature fixed @ 25degC
12
10
8
2GHz, 6.7W
6
10GHz, 3.5W
4
2
0
22GHz, 2W
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Insertion Loss (dB)
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-002103-1363
HMICTM Silicon PIN Diode SPDT Switch
50 MHz - 20 GHz
Rev. V4
Driver Connections
Bias Control
Condi-
tion
of
RF Out-
put
Condi-
tion
of
RF Out-
put
Optimal operation of the MASW-002103-1363 is
achieved by simultaneous application of negative
DC voltage and current to the low loss switching arm
and positive DC voltage and current to the remaining
switching arm as shown in the applications circuit
below. DC return is achieved via R2 on the RFC
path.
In the low loss state, the series diode must be
forward biased with current and the shunt diode
reverse biased with voltage. In the isolated arm, the
shunt diode is forward biased with current and the
series diode is reverse biased with voltage.
Control Level
(DC Currents and Volt-
ages)
J2
J3
J1-J2
J1-J3
-10V at -
20mA 7
+20mA
Low Loss
Isolation
+ 20mA
-10V at -
20mA7
Isolation
Low Loss
7. As long as 20mA is applied through the on diodes, the voltage can
vary.
Applications Circuit
Notes:
1. Assume Vf ~ 1V at 20mA
2. With +5V bias, R1 = 4V / 0.02A = 200Ω
3. PR1 = 0.02A x 4V = 0.08 W
4. With -10V bias, R1 + R2 = 9V / 0.02A = 450Ω
5. PR2 = 0.02A x 0.02A x 250 = 0.1 W
6. Reverse Bias on off-diode is ~6V
7. Inductors are printed lines (λ / 4)
R2 = 250Ω
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-002103-1363
HMICTM Silicon PIN Diode SPDT Switch
50 MHz - 20 GHz
Rev. V4
MASW-002103-1363 Outline Drawing
Top View
Side View
Back Metal
1545
125
J2
J3
2225
J1
Units are in µm
MASW- 002103-1363
Inches
mm
DIM
MIN
MAX
0.062
0.089
0.006
MIN
1.52
2.20
0.10
MAX
1.57
2.25
0.15
Width
0.060
0.087
0.004
Length
Thickness
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-002103-1363
HMICTM Silicon PIN Diode SPDT Switch
50 MHz - 20 GHz
Rev. V4
Handling Procedures
Attachment to a circuit board is made simple through the use of standard surface mount technology. Mounting
pads are conveniently located on the bottom surface of these devices and are removed from the active junction
locations. These devices are well suited for solder attachment onto hard and soft substrates. The use of
80Au/20Sn, or RoHS compliant solders is recommended. For applications where the average power is ≤ 1W,
conductive silver epoxy may also be used. Cure per manufacturers recommended time and temperature. Typi-
cally 1 hour at 150°C.
When soldering these devices to a hard substrate, a solder re-flow method is preferred. A vacuum tip pick-up
tool and a force of 60 to100 grams applied to the top surface of the device while placing the chip is recom-
mended. When soldering to soft substrates, such as Duroid, it is recommended to use a soft solder at the circuit
board to mounting pad interface to minimize stress due to any TCE mismatches that may exist. Position the die
so that its mounting pads are aligned with the circuit board mounting pads. Solder reflow should not be per-
formed by causing heat to flow through the top surface of the die to the back. Since the HMIC glass is transpar-
ent, the edges of the mounting pads can be visually inspected through the die after attachment is completed.
Typical re-flow profiles for Sn60/Pb40 and RoHS compliant solders is provided in Application Note M538 ,
“Surface Mounting Instructions“ and can viewed on the MA-COM Technology Solutions website @
www.macomtech.com
Sample Board
Samples test boards are available upon request
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-002103-1363
HMICTM Silicon PIN Diode SPDT Switch
50 MHz - 20 GHz
Rev. V4
Pocket Tape Dimensions
.157 ± .004
4.00 ± 0.10
.157 ± .004
4.00 ± 0.10
.079 ± .002
2.00 ± 0.05
.069 ± .004
1.75 ± 0.10
Ф .059 ± .004 THRU
1.5 ±
+.012
+0.30
.138
3.5 ± 0.05
8.00 - 0.10
.093 ± .002
2.36 ± 0.05
Ф 0.035
Ф 0.89
.012 ± .001
0.30 ± 0.03
THRU TYP.
5° MAX.
.012 ± .002
0.30 ± 0.05
POCKET DEPTH
.066 ± .002
1.80 ± 0.05
Chip Orientation in Pocket
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-002103-1363
HMICTM Silicon PIN Diode SPDT Switch
50 MHz - 20 GHz
Rev. V4
Reel Information
W1
W1 & W2 measured at hub
W2
B
C
N
D
A
INCHES
MM
DIM
MIN.
MAX.
MIN.
MAX.
A
6.98
7.02
177.3
178.3
B
C
D
.059
.504
.795
.098
.520
.815
1.5
2.5
12.8
20.2
13.2
20.7
N
2.14
.331
—
2.19
.337
.567
54.5
8.4
—
55.5
8.55
14.4
W1
W2
8
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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