MASW-003100-1192_技术文档

Broadband Monolithic

MASW-001100-1190

MASW-002100-1191

MASW-003100-1192

Silicon PIN Diode Switches

Rev 2.0

Features

• Broad Bandwidth

MASW-001100-1190

Specified from 50MHz to 20GHz

Usable from 50MHz to 26.5GHz

• Lower Insertion Loss / Higher Isolation than pHempt

• Rugged, Fully Monolithic, Glass Encapsulated

Construction

• Up to +33dBm C.W. Power Handling @ + 25°C

Description

The MASW-001100, MASW-002100 and

MASW-003100 are broadband monolithic switches using

series and shunt connected silicon PIN diodes. They

are designed for use as moderate signal, high

performance switches in applications up to 26.5GHz.

They provide performance levels superior to those

realized by hybrid MIC designs incorporating beam lead

and PIN chip diodes that require chip and wire

assembly.

MASW-002100-1191

These switches are fabricated using M/A-COM’s

patented HMIC^TM(Heterolithic Microwave Integrated

Circuit) process, US Patent 5,268,310. This process

allows the incorporation of silicon pedestals that form

series and shunt diodes or vias by imbedding them in

low loss, low dispersion glass. By using small spacing

between elements, this combination of silicon and glass

gives HMIC devices low loss and high isolation

performance through low millimeter frequencies.

MASW-003100-1192

Large bond pads facilitate the use of low inductance

ribbon leads, while gold backside metallization allows for

manual or automatic chip bonding via 80/20 AuSn solder

or conductive Ag epoxy.

@ +25°C

Absolute Maximum Ratings

Parameter

Absolute Maximum

-65^oC to +125^oC

-65^oC to +150^oC

+175^oC

| - 50V |

+33dBm C.W.

Operating Temperature

Storage Temperature

Junction Temperature

Applied Reverse Voltage

RF C.W. Incident Power

Bias Current +25°C

±20mA

Specification Subject to Change Without Notice

M/A-COM, Inc. _____________________________________________________________________________________

1

North America: Tel. (800) 366-2266

Fax (800) 618-8883

þ

Asia/Pacific: Tel. +81 3 3263 8761

Fax +81 3 3263 8769

þ

Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

Monolithic Pin Diode Switches

Rev 2.0

MASW-001100-1190, MASW-002100-1191, MASW-003100-1192

MASW-001100-1190 (SPST)

Electrical Specifications @ T_A= +25^oC, 20mA Bias Current

Parameter

Frequency

6GHz

13GHz

20GHz

6GHz

13GHz

20GHz

6GHz

13GHz

20GHz

-

Minimum

Nominal

Maximum

Units

dB

ns

-

46

39

34

22

15

14

-

0.4

0.5

0.7

55

47

42

31

33

27

20

-

0.7

0.9

1.2

-

Insertion Loss

Isolation

Input Return Loss

Switching Speed¹

-

Voltage Rating²

-

50

-

V

Signal Compression (500mW)

1GHz

-

0.2

dB

MASW-002100-1191 (SPDT)

Electrical Specifications @ T_A= +25^oC, 20mA Bias Current

Parameter

Frequency

6GHz

13GHz

20GHz

6GHz

13GHz

20GHz

6GHz

13GHz

20GHz

-

Minimum

Nominal

Maximum

Units

dB

ns

-

0.4

0.5

0.7

63

50

42

27

25

20

-

0.7

Insertion Loss

-

1.0

1.2

-

48

40

34

20

18

15

-

Isolation

Input Return Loss

Switching Speed¹

Voltage Rating²

-

50

-

V

Signal Compression (500mW)

1GHz

-

0.2

dB

MASW-003100-1192 (SP3T)

Electrical Specifications @ T_A= +25^oC, 20mA Bias Current

Parameter

Frequency

6GHz

13GHz

20GHz

6GHz

13GHz

20GHz

6GHz

13GHz

20GHz

-

Minimum

Nominal

Maximum

Units

dB

ns

-

0.5

0.7

0.9

57

48

42

24

22

21

20

-

0.8

Insertion Loss

-

1.1

-

1.5

49

42

33

20

14

11

-

Isolation

-

Input Return Loss

-

Switching Speed¹

-

Voltage Rating²

-

50

-

V

dB

Signal Compression (500mW)

1GHz

-

0.2

1.) Typical Switching Speed measured from 10 % to 90 % of detected RF signal driven by TTL compatible drivers.

2.) Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10µA maximum at -50 volts.

Specification Subject to Change Without Notice

2

______________________________________________________________________________ M/A-COM, Inc.

North America: Tel. (800) 366-2266

Fax (800) 618-8883

þ

Asia/Pacific: Tel. +81 3 3263 8761

Fax +81 3 3263 8769

þ

Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

Monolithic Pin Diode Switches

Rev 2.0

MASW-001100-1190, MASW-002100-1191, MASW-003100-1192

Typical Performance Curves @ T_A= +25°C, 20mA Bias Current

MASW-001100-1190

RETURN LOSS vs. FREQUENCY

MASW-001100-1190

INSERTION LOSS vs. FREQUENCY

-10

-15

-20

-25

-30

-35

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

-1

Output Return Loss

Input Return Loss

20 25

0

5

10

15

30

0

5

10

15

20

25

30

FREQUENCY (GHz)

MASW-002100-1191

RETURN LOSS vs. FREQUENCY

MASW-002100-1191

INSERTION LOSS vs. FREQUENCY

-10

-15

-20

-25

-30

-35

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

-1

Output Return Loss

Input Return Loss

0

5

10

15

20

25

0

5

10

15

20

FREQUENCY (GHz)

MASW-003100-1192

RETURN LOSS vs. FREQUENCY

MASW-003100-1192

-10

-15

-20

-25

-30

INSERTION LOSS vs. FREQUENCY

-0.3

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

-1

Output Return Loss

Input Return Loss

-1.1

-1.2

0

5

10

15

20

25

0

5

10

15

20

FREQUENCY (GHz)

S-Parameters: S-Parameter data for these devices are available upon request.

Specification Subject to Change Without Notice

M/A-COM, Inc. _______________________________________________________________________________

3

North America: Tel. (800) 366-2266

Fax (800) 618-8883

þ

Asia/Pacific: Tel. +81 3 3263 8761

Fax +81 3 3263 8769

þ

Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

Monolithic Pin Diode Switches

Rev 2.0

MASW-001100-1190, MASW-002100-1191, MASW-003100-1192

Typical Performance Curves @ T = +25°C, 20mA Bias Current

A

MASW-001100-1190

ISOLATION vs. FREQUENCY

INPUT RETURN LOSS vs. BIAS CURRENT @ 10 GHz

-22

-35

-40

-45

-50

-55

-60

-65

-70

-75

-80

-24

MASW-003100

-26

-28

-30

-32

-34

MASW-002100

MASW-001100

0

5

10

15

20

25

30

35

40

45

50

55

0

5

10

15

20

25

30

CURRENT (mA)

FREQUENCY (GHz)

OUTPUT RETURN LOSS vs. BIAS CURRENT@ 10 GHz

-21.5

-22

-22.5

-23

MASW-003100-1192

ISOLATION vs. FREQUENCY

-35

-40

-45

-50

-55

-60

-65

-70

-75

-80

-23.5

MASW-001100

-24

-24.5

-25

MASW-003100

MASW-002100

-25.5

0

5

10

15

20

25

30

35

40

45

50

55

CURRENT (mA)

INSERTION LOSS vs. BIAS CURRENT @ 10 GHz

0

5

10

15

20

25

30

-0.35

-0.4

FREQUENCY (GHz)

MASW-002100

MASW-001100

-0.45

-0.5

MASW-002100-1191

ISOLATION vs. FREQUENCY

MASW-003100

-35

-0.55

-0.6

-40

-45

-50

-55

-60

-65

-70

-75

-80

-0.65

-0.7

0

5

10

15

20

25

30

35

40

45

50

55

CURRENT (mA)

ISOLATION vs. BIAS CURRENT @ 10 GHz

-46

-47

-48

-49

-50

-51

-52

-53

-54

0

5

10

15

20

25

30

FREQUENCY (GHz)

MASW-001100

MASW-002100

MASW-003100

0

5

10

15

20

25

30

35

40

45

50

55

CURRENT (mA)

Specification Subject to Change Without Notice

4

______________________________________________________________________________ M/A-COM, Inc.

North America: Tel. (800) 366-2266

Fax (800) 618-8883

þ

Asia/Pacific: Tel. +81 3 3263 8761

Fax +81 3 3263 8769

þ

Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

Monolithic Pin Diode Switches

Rev 2.0

MASW-001100-1190, MASW-002100-1191, MASW-003100-1192

1

Operation of the MASW Series Switches

MASW-001100-1190 and Bias Connections

J 1

R F IN P U T

2 0 p F

Operation of the MASW series of PIN Switches is

achieved by simultaneous application of negative DC

current to the low loss switching arm J1, J2, or J3, and

positive DC current to the remaining switching arms as

shown in the Bias Connection circuits. DC return is

achieved via J1. The control currents should be supplied

by constant current sources. The voltages at these points

will not exceed +1.5 volts (1.2 volts typical) at currents up

to + 20mA. In the Low Loss state, the series diode must be

forward biased and the shunt diode reverse biased. In the

isolated arm, the shunt diode is forward biased and the

series diode is reverse biased.

2 0 n H

J 2 B IA S

2 0 p F

1 0 0

Ω

2 0 p F

2 0 n H

J 2

R F O U T P U T

2 0 p F

S w it c h

C h ip

Driver Connections

MASW-001100-1190

1

MASW-002100-1191 and Bias Connections

J1 RF INPUT

20pF

Control Level

(DC Current) at

Condition of

RF Output

J2

J1-J2

J2 BIAS

J3 BIAS

20nH

-20 mA

+20 mA

Low Loss

Isolation

100

Ω

20pF

20nH

MASW-002100-1191

Control Level

20pF

J3

RF OUTPUT

J2

RF OUTPUT

Condition

of RF

Output

Condition of

RF Output

20pF

Switch

Chip

(DC Current) at

J2

J3

J1-J2

J1-J3

-20 mA

+20 mA

-20 mA

Low Loss

Isolation

Low Loss

MASW-003100-1192 and Bias Connections¹

J1 RF INPUT

20pF

MASW-003100-1192

Control Level (DC Current) at

J4 BIAS

J2 BIAS

20nH

Condition

of RF

Output

Conditio

n of RF

Output

Condition

of RF

Output

20pF

100Ω

J2

J3

J4

J1-J2

J1-J3

J1-J4

20pF

20nH

20pF

20nH

-20 mA

+20 mA

-20 mA

+20 mA

-20 mA

Low Loss

Isolation

Low Loss

Isolation

Low Loss

20pF

J4

J2

RF OUTPUT

20pF

Handling Considerations

Cleanliness: These chips should be handled in a clean

J3 BIAS

20nH

environment.

installation.

Do not attempt to clean chips after

20pF

J3

RF OUTPUT

Electro-Static Sensitivity:

The MASW Series PIN

switches are ESD, Class 1A sensitive (HBM). The proper

ESD handling procedures should be used.

Notes:

1. RLC values are for a typical operating frequency of 2 - 18GHz

and Bias Current of ± 20mA per diode.

Specification Subject to Change Without Notice

M/A-COM, Inc. _______________________________________________________________________________

5

North America: Tel. (800) 366-2266

Fax (800) 618-8883

þ

Asia/Pacific: Tel. +81 3 3263 8761

Fax +81 3 3263 8769

þ

Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

Monolithic Pin Diode Switches

Rev 2.0

MASW-001100-1190, MASW-002100-1191, MASW-003100-1192

Wire Bonding

Thermosonic wedge wire bonding using 0.003” x 0.00025” ribbon or 0.001” diameter gold wire is recommended.

A stage temperature of 150^oC and a force of 18 to 22 grams should be used. Ultrasonic energy should be

adjusted to the minimum required to achieve a good bond. RF bond wires should be kept as short as possible.

Mounting

The HMIC switches have TiPtAu back metal. They can be die mounted with a gold-tin eutectic solder preform or

conductive epoxy. Mounting surface must be clean and flat.

Eutectic Die Attachment: An 80/20 gold-tin eutectic solder preform is recommended with a work surface

temperature of 255^oC and a tool tip temperature of 265^oC. When hot gas is applied, the tool tip temperature

should be 290^oC. The chip should not be exposed to temperatures greater than 320^oC for more than 20

seconds. No more than three seconds should be required for attachment. Solders containing tin should not be

used.

Epoxy Die Attachment: Surface of assembly should be preheated to 125-150^oC. A minimum amount of epoxy

should be used. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy

per manufacturer’s schedule.

Chip Outline Drawings^{1, 2}

MASW-001100-1190

DIM

INCHES

MM

MIN.

MAX.

0.018

0.029

MIN.

0.35

0.64

MAX.

0.45

0.74

A

B

C

D

E

F

0.014

0.025

0.008 REF

0.20 REF

0.10 0.15

0.004

0.006

0.004 REF

0.10 REF

0.08 REF

0.52 REF

0.003 REF

0.020 REF

G

H

Notes: 1. Topside metallization is gold 2.5µm thick typical. Backside metallization is gold, 1.0µm thick typical.

2. Hatched areas indicate wire bonding pads.

Specification Subject to Change Without Notice

6

______________________________________________________________________________ M/A-COM, Inc.

North America: Tel. (800) 366-2266

Fax (800) 618-8883

þ

Asia/Pacific: Tel. +81 3 3263 8761

Fax +81 3 3263 8769

þ

Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

Monolithic Pin Diode Switches

Rev 2.0

MASW-001100-1190, MASW-002100-1191, MASW-003100-1192

Chip Outline Drawings^{1, 2}

MASW-002100-1191

DIM

INCHES

MM

MIN.

MAX.

0.033

0.006

MIN.

0.73

0.10

MAX.

0.83

0.15

A

B

C

D

E

F

0.029

0.004

0.004 REF

0.10 REF

0.005 REF

0.009 REF

0.023 REF

0.007 REF

0.004 REF

0.13 REF

0.23 REF

0.58 REF

0.17 REF

0.10 REF

G

H

MASW-003100-1192

DIM

INCHES

MM

MIN.

MAX.

0.050

0.040

MIN.

MAX.

1.26

1.02

A

B

C

D

E

F

0.046

0.036

1.16

0.92

0.019 REF

0.48 REF

0.014 REF

0.004 REF

0.005 REF

0.36 REF

0.10 REF

0.13 REF

G

H

J

0.004

0.006

0.10

0.15

0.005 REF

0.004 REF

0.12 REF

0.10 REF

Notes: 1. Topside metallization is gold 2.5µm

thick typical. Backside metallization is gold, 1.0µm thick typical.

2. Hatched areas indicate wire bonding pads

.

Specification Subject to Change Without Notice

M/A-COM, Inc. _______________________________________________________________________________

7

North America: Tel. (800) 366-2266

Fax (800) 618-8883

þ

Asia/Pacific: Tel. +81 3 3263 8761

Fax +81 3 3263 8769

þ

Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

Monolithic Pin Diode Switches

Rev 2.0

MASW-001100-1190, MASW-002100-1191, MASW-003100-1192

Ordering Information

Part Number

Package

Waffle Pack

MASW-001100-11900W

MASW-002100-11910W

MASW-003100-11920W

Specification Subject to Change Without Notice

8

______________________________________________________________________________ M/A-COM, Inc.

North America: Tel. (800) 366-2266

Fax (800) 618-8883

þ

Asia/Pacific: Tel. +81 3 3263 8761

Fax +81 3 3263 8769

þ

Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020


型号：	MASW-003100-1192
厂家：	TE CONNECTIVITY
描述：	Broadband Monolithic Silicon PIN Diode Switches 宽带单片硅PIN二极管开关二极管开关射频微波
文件：	总8页 (文件大小：387K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MASW-003100-1192 [TE]

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