MASW6010G [TE]
GaAs SPDT Switch DC-6 GHz; 砷化镓单刀双掷开关的DC- 6 GHz的
| 型号： | MASW6010G |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaAs SPDT Switch DC-6 GHz |
| 文件： | 总2页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs SPDT Switch
DC-6 GHz
MASW6010G
V 2.00
■ Low Insertion Loss, 0.5 dB Typical @ 4 GHz
■ Fast Switching Speed, 4ns Typical
■ Ultra Low DC Power Consumption
■ Integral Static Protection
Guaranteed Specifications** @25°C***
Frequency Range
DC - 6000
MHz
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
0.6 dB Max
0.8 dB Max
1.4 dB Max
Typical Performance @ +25°C
InsertionLoss(dB)
1 .4
1 .2
1 .0
0 .8
0 .6
0 .4
0 .2
Isolation
+8 5 °C
DC - 1.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
45 dB Min
38 dB Min
22 dB Min
-5 5 °C
VSWR
+2 5 °C
DC - 1.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
1.1:1 Max
1.2:1 Max
1.9:1 Max
0
1
2
3
4
5
6
7
Frequency GHz
Isolation @ +25°C
8 0
7 0
6 0
5 0
4 0
3 0
2 0
Operating Characteristics
Impedance
50 WNominal
Switching Characteristics
t
t
, t
(10/90% or 90/10% RF)
2 ns Typ
4 ns Typ
10 mV Typ
RISE FALL
, t (50% CTL to 90/10% RF)
ON OFF
Transients (In-Band)
0
1
2
3
4
5
6
7
Frequency GHz
Input Power for 1 dB Compression
MASW6010 NP VSWR
Control Voltages (Vdc)
0/-5
0/-8
2 .0
1 .8
1 .6
1 .4
1 .2
1 .0
Above 500 MHz
100 MHz
+27 dBm
+21 dBm
+33 dBm Typ
+26 dBm Typ
Intermodulation Intercept Point (for
two-tone input power up to +5 dBm)
Intercept Points
IP
2
IP
3
Above 500 MHz
100 MHz
+68 dBm
+62 dBm
+46 dBm Typ
+40 dBm Typ
0
1
2
3
4
5
6
7
FrequencyGHz
Control Voltages (Complementary Logic)
Schematic
V
V
Low
Hi
0 to -0.2V @ 20 µA Max
IN
IN
-5V @ 50 µA Typ to -8V @ 300 µA Max
Die Size
0.031" x 0.031" x 0.010"
(0.80mm x0.80mm x 0.25mm)
*
Equivalent to Anzac SW200
** All specifications apply with 50 Wimpedance connected to all RF
ports, 0 and -8 Vdc control voltages.
*** Loss change 0.0025 dB/°C. (From -55°C to +85°C)
V 2.00
Handling Precautions
Permanent damage to the MASW6010 may occur if the following
precautions are not adhered to:
Truth Table
A. Cleanliness – The MASW6010 should be handled in a clean
environment. DO NOT attempt to clean unit after the
MASW6010 is installed.
Control Input
Condition Of Switch
RFCommon To
Each RF Port
B. Static Sensitivity – All chip handling equipment and personnel
should be DC grounded.
A
B
RF1
RF2
C. Transient – Avoid instrument and power supply transients while
bias is applied to the MASW6010.Use shielded signal and bias
cables to minimize inductive pick-up.
V
Hi
in
V Low
in
On
Off
Off
On
V
Low
V Hi
in
in
D. Bias – Apply voltage to either control port A/B or only when the
other is grounded. Neither port should be allowed to “float”.
V
Low 0 to -0.2V
in
V Hi
-5V to -8V
in
E. General Handling – It is recommended that the MASW6010
chip be handled along the long side of the die with a sharp pair
of bent tweezers. DO NOT touch the surface of the chip with fin-
gers or tweezers.
Maximum Ratings
A. Control Voltage (A / B): -8.5 Vdc
B. Max Input RF Power: +42 dBm (500 MHz - 6 GHz)
C. Storage Temperature: -65°C to +175°C
Mounting
The MASW6010 is back-metallized with Pd/Ni/Au (100/1,000/ 30,000Å)
metallization.It can be die-mounted with AuSn eutectic preforms or
with thermally conductive epoxy. The package surface should be
clean and flat before attachment.
D. Maximum Operating Temperature: +175°C
Bonding Pad Dimensions
Inches (mm)
Eutectic Die Attach:
A. A 80/20 gold/tin preform is recommended with a work surface
temperature of approximately 255°C and a tool temperature of
265°C. When hot 90/10 nitrogen/hydrogen gas is applied, tool
tip temperature should be approximately 290°C.
RFcom: 0.004 x 0.004
(0.100 x 0.100)
RF2,RF3: 0.004 x 0.004
(0.100 x 0.100)
B. DO NOT expose the MASW6010 to a temperature greater than
320°C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
A,B: 0.004 x 0.004
(0.100 x 0.100)
Epoxy Die Attach:
A. Electrically conductive epoxy must be used.
GND1,GND2: 0.012 x 0.004
(0.300 x 0.100)
B. Apply a minimum amount of epoxy and place the MASW6010
into position. A thin epoxy fillet should be visible around the
perimeter of the chip.
Die Size
Inches (mm)
C. Cure epoxy per manufacturer's recommended schedule.
0.031 x 0.031 x 0.010
(0.80 x 0.80 x 0.25)
Wire Bonding
A. Ball or wedge bond with 1.0 mil diameter pure gold wire.Thermo-
sonic wirebonding with a nominal stage temperature of 150°C
and a ball bonding force of 40 to 50 grams or wedge bonding
force of 18 to 22 grams is recommended. Ultrasonic energy and
time should be adjusted to the minimum levels to achieve reliable
wirebonds.
B. Wirebonds should be started on the chip and terminated on the
package.
相关型号：
©2020 ICPDF网 联系我们和版权申明