MASWSS0006TR [TE]

GaAs SP2T 2.5V High Power Switch DC - 3 GHz; 砷化镓SP2T 2.5V大功率开关DC - 3 GHz的
MASWSS0006TR
型号: MASWSS0006TR
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

GaAs SP2T 2.5V High Power Switch DC - 3 GHz
砷化镓SP2T 2.5V大功率开关DC - 3 GHz的

开关 射频 微波 光电二极管
文件: 总5页 (文件大小:240K)
中文:  中文翻译
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GaAs SP2T 2.5V High Power Switch  
Jan 17 2002  
DC - 3 GHz  
Preliminary  
Features  
Functional Schematic  
Low Voltage Operation 2.5V  
Low Harmonics > 65 dBc at +34 dBm & 1 GHz  
Low Insertion Loss 0.45 dB at 1 GHz  
High Isolation 18.5 dB at 2 GHz  
Miniature SOT-26 Package  
PIN 1  
PIN 6  
RF1  
39 pF  
V1  
0.5 micron GaAs pHEMT Process  
GND  
RFC  
V2  
39 pF  
Description  
RF2  
M/A-COM’s MASWSS0006 is a GaAs PHEMT MMIC  
single pole two throw (SP2T) high power switch in a low  
cost miniature SOT-26 package. The MASWSS0006 is  
ideally suited for applications where high power, low con-  
trol voltage, low insertion loss, high isolation, small size  
and low cost are required. Typical applications are for  
GSM and DCS handset systems that connect separate  
transmit and receive functions to a common antenna, as  
well as other related handset and general purpose appli-  
cations. This part can be used in all systems operating  
up to 3 GHz requiring high power at low control voltage.  
39 pF  
The MASWSS0006 is fabricated using a 0.5 micron gate  
length GaAs PHEMT process. The process features full  
passivation for performance and reliability.  
Pin Configuration  
PIN  
PIN Name  
Description  
No.  
1
2
3
4
5
6
RF1  
GND  
RF2  
V1  
RF Port 1  
RF Ground  
RF Port 2  
Absolute Maximum Ratings 1  
Control 1  
Parameter  
Absolute  
Maximum  
RFC  
V2  
RF Common Port  
Control 2  
Max Input Power (0.5 - 3 GHz,  
2.5V Control)  
+38 dBm  
Operating Voltage  
+8.5 volts  
-40 oC to +85 oC  
Operating Temperature  
Storage Temperature  
-65 oC to +150 oC  
1. Exceeding any one or combination of these limits may  
cause permanent damage.  
GaAs SP2T 2.5V High Power Switch  
MASWSS0006  
V 1.00  
Electrical Specifications: TA = 25°C, Z0 = 502  
Parameter  
Test Conditions  
Units  
Min.  
Typ.  
Max.  
Insertion Loss  
DC – 1 GHz  
1 – 2 GHz  
2 - 3 GHz  
dB  
dB  
dB  
0.45  
0.55  
0.65  
0.65  
0.75  
Isolation  
DC – 1 GHz  
1 – 2 GHz  
2 - 3 GHz  
dB  
dB  
dB  
23  
24.5  
18.5  
14  
17.5  
Return Loss  
IP3  
DC – 2 GHz  
2 - 3 GHz  
dB  
dB  
20  
16  
Two Tone +21 dBm, 1 MHz Spacing, > 50 MHz  
Vc = 0V/3V  
dBm  
64  
P1dB  
Vc = 0V/2.5V  
1 GHz, PIN = +34 dBm, Vc = 0V/2.5V  
1 GHz, PIN = +34 dBm, Vc = 0V/2.5V  
10% to 90% RF, 90% to 10% RF  
50% control to 90% RF, and 50% control to 10% RF  
In Band  
dBm  
dBc  
dBc  
uS  
38  
2nd Harmonic  
3rd Harmonic  
Trise, Tfall  
Ton, Toff  
65  
65  
1
1
uS  
Transients  
Gate Leakage  
mV  
uA  
10  
|Vc| = 2.5V  
100  
2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 39 pF for  
0.5 GHz - 3 GHz.  
Truth Table 3  
V1  
V2  
ANT– RF1  
ANT - RF2  
+2.5 to +5V  
0 + 0.2V  
0 + 0.2V  
On  
Off  
Off  
On  
+2.5 to +5V  
3. External DC blocking capacitors are required on all RF ports  
2
Specifications subject to change without notice.  
„ North America: Tel. (800) 366-2266, Fax (800) 618-8883  
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
„ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
Visit www.macom.com for additional data sheets and product information.  
GaAs SP2T 2.5V High Power Switch  
Typical Performance Curves  
MASWSS0006  
V 1.00  
Insertion Loss vs. Frequency,  
25 oC, 39 pF  
Isolation vs. Frequency,  
25 oC, 39 pF  
0
-0.1  
-0.2  
-0.3  
-0.4  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
0.5  
1
1.5  
2
2.5  
3
0.5  
1
1.5  
2
2.5  
3
Frequency (GHz)  
Frequency (GHz)  
Harmonic Rejection vs. Control Voltage,  
25 oC, 39 pF  
-60  
Pin = +34 dBm @ 1 GHz  
-65  
-70  
3rd Harmonic  
-75  
-80  
-85  
2nd Harmonic  
-90  
2.2  
2.4  
2.6  
2.8  
3
Frequency (GHz)  
3
Specifications subject to change without notice.  
„ North America: Tel. (800) 366-2266, Fax (800) 618-8883  
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
„ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
Visit www.macom.com for additional data sheets and product information.  
GaAs SP2T 2.5V High Power Switch  
SOT-26 Plastic Package  
MASWSS0006  
V 1.00  
4
Specifications subject to change without notice.  
„ North America: Tel. (800) 366-2266, Fax (800) 618-8883  
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
„ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
Visit www.macom.com for additional data sheets and product information.  
GaAs SP2T 2.5V High Power Switch  
Handling Procedures  
MASWSS0006  
V 1.00  
The following precautions should be observed to avoid  
damage:  
Static Sensitivity  
Gallium Arsenide Integrated Circuits are ESD sensitive  
and can be damaged by static electricity. Proper ESD  
techniques should be used when handling these devices.  
Ordering Information  
Part Number  
Package  
MASWSS0006  
SOT-26 6-lead Plastic Package  
MASWSS0006TR  
1000 piece reel  
MASWSS0006SMB  
Sample Test Board  
5
Specifications subject to change without notice.  
„ North America: Tel. (800) 366-2266, Fax (800) 618-8883  
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
„ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
Visit www.macom.com for additional data sheets and product information.  

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