MRF317 [TE]
The RF Line NPN Silicon RF Power Transistor; 射频线NPN硅射频功率晶体管
| 型号： | MRF317 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | The RF Line NPN Silicon RF Power Transistor |
| 文件： | 总5页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF317/D
The RF Line
NP N S ilic on
M
R
F
3
1
7
R
F
P
o
w
e
r
T
r
a
n
s
i
s
t
o
r
. . . designed primarily for wideband large–signal output amplifier stages in
30–200 MHz frequency range.
•
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 100 W
100 W, 30–200 MHz
CONTROLLED Q
BROADBAND RF POWER
TRANSISTOR
Minimum Gain = 9.0 dB
•
•
•
•
Built–In Matching Network for Broadband Operation
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability
NPN SILICON
High Output Saturation Power — Ideally Suited for 30 W Carrier/120 W
Peak AM Amplifier Service
•
Guaranteed Performance in Broadband Test Fixture
MAXIMUM RATINGS
Rating
Symbol
Value
35
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
65
4.0
Collector Current — Continuous
Collector Current — Peak (10 seconds)
I
C
12
18
Total Device Dissipation @ T = 25°C (1)
P
D
270
Watts
C
Derate above 25°C
1.54
W/°C
CASE 316–01, STYLE 1
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
0.65
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 100 mAdc, I = 0)
V
35
65
65
4.0
—
—
—
—
—
—
—
—
Vdc
Vdc
(BR)CEO
C
B
Collector–Emitter Breakdown Voltage
(I = 100 mAdc, V = 0)
V
(BR)CES
C
BE
Collector–Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
—
Vdc
(BR)CBO
(BR)EBO
C
E
Emitter–Base Breakdown Voltage
(I = 10 mAdc, I = 0)
—
Vdc
E
C
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
5.0
mAdc
CBO
CB
E
ON CHARACTERISTICS
DC Current Gain
h
FE
10
25
80
—
(I = 5.0 Adc, V = 5.0 Vdc)
C
CE
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 7
1
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(V = 28 Vdc, I = 0, f = 1.0 MHz)
C
—
150
175
pF
ob
CB
E
FUNCTIONAL TESTS (Figure 2)
Common–Emitter Amplifier Power Gain
G
9.0
55
10
60
—
—
dB
%
PE
(V = 28 Vdc, P = 100 W, f = 150 MHz, I (Max) = 6.5 Adc)
CC
out
C
Collector Efficiency
η
(V = 28 Vdc, P = 100 W, f = 150 MHz, I (Max) = 6.5 Adc)
CC
out
C
Load Mismatch
ψ
(V = 28 Vdc, P = 100 W CW, f = 150 MHz,
No Degradation in Output Power
CC
out
VSWR = 30:1 all phase angles)
REV 7
2
R2
R3
RFC 3
RFC 2
RFC 5
C 5
R
1
R
F
C
6
C1 3
DC +ā 28 Vd c
C11
C1 2
RFC 4
L 3
RF C1
C3
C1 0
L 4
R F
O U TPU T
C1
L2
R F
IN PU T
DUT
C6
C
7
C
8
C
9
L 1
C2
C 4
C1, C9 — 39 pF, 100 mil ATC
C2 — 120 pF, 100 mil ATC
C11 — 60 pF, Underwood
C12 — 0.1 µF Erie Redcap
C13 — 1000 pF, Underwood J102
L1 — 50 nH
L2 — 6.0 nH
L3 — 8.0 nH
RFC1 — 0.15 µH Molded Coil
RFC2, RFC3 — Ferroxcube Bead 56–590–65/3B
RFC4 — 1 Turn, #18 Wire, 2.0″ L
RFC5 — Ferroxcube VK200 19/4B
RFC6 — 7 Turns, #18 Wire, 0.3″ ID
R1 — 10 Ω 1/2 W
C3, C4 — 360 pF, 100 mil ATC
C5 — 1000 pF Dipped Mica
C6, C7 — 100 pF, 100 mil ATC*
C8 — 18 pF, 100 mil ATC*
C10 — 43 pF, 100 mil ATC
L4 — 32 nH
R2, R3 — 10 Ω 1.0 W
*Combination of C6, C7, C8 equals 220 pF.
Figure 1. 110ā–ā160 MHz Broadband Amplifier — Test Fixture Schematic
7 0
6 0
5 0
4 0
1 0
9
8
7
6
P
V
=
=
1 00
2 8
W
P
V
=
=
1 0 0
2 8
W
o ut
ou t
V
3 0
V
C C
C C
2 0
11 0
1
3
5
1
6
0
1
1
0
1
3
5
1
6
0
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 2. Power Gain versus Frequency
Broadband Test Fixture
Figure 3. Efficiency versus Frequency
Broadband Test Fixture
6
5
1 40
1 20
1 00
f
=
3
0
M
5
0
M
H
z
V
C C
=
2
8
V
P
V
=
=
1 00
2 8
W
V
o
u
t
C
C
4
3
2
1
8 0
6 0
4 0
2 0
2 00 MH z
1 50 MH z
1 00 MH z
1
1
0
1
3
5
1
6
0
0
.
2
0
.
5
1
2
5
1
0
2
0
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
P , I NP UT P O WE R (WATTS )
i n
Figure 4. Input VSWR versus Frequency
Broadband Test Fixture
Figure 5. Output Power versus Input Power
REV 7
3
TYPICAL PERFORMANCE CURVES
1 20
P
i n
=
1 0
W
1 7
1 6
1 5
1 4
1 3
1 2
11
1 0
9
P
V
=
=
1 00
2 8
W
o
u
t
8
W
W
V
1 00
8 0
6 0
4 0
2 0
C C
6
f
=
1 0 0 MH z
2 8
8
2 0
4
0
6
0
80
10 0 12 0 14 0 16 0 18 0 2 00
f , FR EQ UE NC Y ( M Hz)
1 2
1 6
2 0
2 4
V
C C
,
S UP P LY V O LTA G E (V O LTS )
Figure 6. Power Gain versus Frequency
Figure 7. Power Output versus Supply Voltage
1 20
1 00
P
=
1 0
W
P
=
1 0
W
i
n
i n
1 00
8 0
6 0
4 0
2 0
8
W
W
8
W
W
6
6
8 0
6 0
4 0
2 0
f
=
1 50 MH z
2 8
f
=
2 0 0 MH z
2 8
1 2
1 6
2 0
2 4
1 2
1
6
2
0
24
V
C C
,
S
U
P
P
L
Y
V
O
L
T
A
G
E
(
V
O
L
T
S
)
V ,
C C
S UP PLY V O LTA G E (V O LTS)
Figure 8. Power Output versus Supply Voltage
Figure 9. Power Output versus Supply Voltage
0
1 .0
1 25
1 50
2 .0
2. 0
1 00
2 00
Z
i
n
V
C C
=
2 8 V, = P 1 00
ou t
W
20 0
17 5
3 .0
3
.
0
5
0
1 . 0
1
7
5
f
Z
Z
*
OL
in
4
.
0
f
=
30 M Hz
10 0
MHz
OHMS
OHMS
2
.
0
1
5
0
3 0
5 0
1
.
2
-
-
+
+
+
+
+
j
2
.
0
4
.
3
-
-
-
-
-
-
-
j5 . 0
j4 . 9
j2 . 3
j1 . 9
j1 . 3
j0 . 6
j0 . 6
1
2
5
1 .0
0 .3
0 .3
0 .6
1 .0
0 .9
j1 . 8 4 . 0
j0 . 7 2 . 0
j1 . 0 1 . 9
j1 . 3 1 . 9
j1 . 5 1 . 6
j1 . 0 1 . 1
3 . 0
4 . 0
1 00
1 25
1 50
1 75
2 00
Z
*
O L
5 . 0
6 . 0
5
0
f
=
3
0
M
H
z
Z
*
= C onj ug ate of t he op ti m um lo a d im pe d an ce in t o wh ich t he d evi ce o ut p ut
o=p er at es at a gi ven ou tp ut p ow er, vo lt a ge a nd f re q ue n cy.
O L
Z
*
O L
Figure 10. Series Equivalent Input–Output Impedance
REV 7
4
PACKAGE DIMENSIONS
F
D
4
N O TE S :
L
R
Q
1
.
F
AN
G
E
I
S
I
S
O
L
A
T
ED
I
N
A
L
L
S TY LE S.
K
3
INCHES
DIM MIN MAX
MILLIMETERS
MIN MAX
A
B
C
D
E
F
2
1
4
2
5
5
2
5
8
0
0
3
3
2
3
.
.
.
.
.
.
.
.
.
.
.
.
.
.
3
4
9
3
1
0
2
1
2
8
8
9
0
9
8
5
7
3
6
8
9
0
9
1
1
2
5
4
2
1
5
2
7
5
3
5
8
0
. 1
. 9
. 6
. 5
. 0
. 3
. 5
. 1
. 1
. 0
. 3
. 3
. 3
. 5
4
5
2
8
4
3
4
5
7
6
1
0
0
7
0
0
0
0
0
0
0
0
0
0
0
.
.
.
.
.
.
.
.
.
.
.
9
4
2
2
0
2
7
0
4
1
1
60
90
35
10
85
00
20
04
05
50
50
5
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
.
.
.
.
.
.
.
.
.
.
.
.
.
.
9
5
3
2
1
2
7
0
4
1
1
1
1
4
90
10
00
20
20
10
30
06
40
60
70
30
30
95
1
2
H
J
1
1
1
L
K
L
11
B
4
4
3
3
2
C
J
N
Q
R
U
0. 11
1
4
E
0
0
.
.
2
7
N
1
1
1
H
A
S
T
Y
P
L
E
1
:
U
IN
1
.
E
M
L
I
T
C
T
E
T
R
O
2
3
4
.
.
.
C
E
B
O
L
E
MIT T ER
R
AS E
CASE 316–01
ISSUE D
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 7
5
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