MRF426 [TE]
The RF Line NPN Silicon RF Power Transistor; 射频线NPN硅射频功率晶体管
| 型号： | MRF426 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | The RF Line NPN Silicon RF Power Transistor |
| 文件： | 总5页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF426/D
The RF Line
NP N S ilic on
M
R
F
4
2
6
R
F
P
o
w
e
r
T
r
a
n
s
i
s
t
o
r
. . . designed for high gain driver and output linear amplifier stages in 1.5 to
30 MHz HF/SSB equipment.
•
Specified 28 Volt, 30 MHz Characteristics —
Output Power = 25 W (PEP)
Minimum Gain = 22 dB
25 W (PEP), 30 MHz
RF POWER
Efficiency = 35%
TRANSISTOR
NPN SILICON
•
Intermodulation Distortion @ 25 W (PEP) —
IMD = –30 dB (Max)
•
•
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Class A and AB Characterization
BLX 13 Equivalent
CASE 211–07, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
35
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
65
4.0
3.0
6.0
Collector Current — Continuous
Withstand Current — 5 s
I
C
—
Total Device Dissipation @ T = 25°C (1)
P
D
70
Watts
C
Derate above 25°C
0.4
W/°C
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
2.5
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I = 50 mAdc, I = 0)
V
V
V
35
65
4.0
—
—
—
—
—
—
—
—
10
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector–Base Breakdown Voltage (I = 50 mAdc, I = 0)
C
E
Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)
Vdc
E
C
Collector Cutoff Current (V = 28 Vdc, V = 0)
I
CES
mAdc
CE
BE
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
1
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 1.0 Adc, V = 5.0 Vdc)
h
FE
10
35
—
—
C
CE
DYNAMIC CHARACTERISTICS
Output Capacitance
C
—
60
80
pF
ob
(V = 30 Vdc, I = 0, f = 1.0 MHz)
CB
E
FUNCTIONAL TESTS (SSB)
Common–Emitter Amplifier Gain
G
22
35
—
25
—
—
—
dB
%
PE
(V = 28 Vdc, P = 25 W (PEP), f1 = 30 MHz,
CC
out
f2 = 30.001 MHz, I = 25 mA)
CQ
Collector Efficiency
η
(V = 28 Vdc, P = 25 W (PEP), f1 = 30 MHz,
CC
out
f2 = 30.001 MHz, I = 25 mA)
CQ
Intermodulation Distortion (2)
IMD
–35
–30
dB
(d3)
(V = 28 Vdc, P = 25 W (PEP), f1 = 30 MHz,
CC
out
f2 = 30.001 MHz, I = 25 mA)
CQ
Load Mismatch
ψ
(V = 28 Vdc, P = 25 W (PEP), f1 = 30 MHz,
No Degradation in Output Power
CC
out
f2 = 30.001 MHz, I = 25 mA, VSWR 30:1 at All Phase Angles)
CQ
CLASS A PERFORMANCE
Intermodulation Distortion (2) and Power Gain
G
IMD
IMD
—
—
—
23.5
–40
–55
—
—
—
dB
PE
(V = 28 Vdc, P = 8.0 W (PEP), f1 = 30 MHz,
CC
out
(d3)
(d5)
f2 = 30.001 MHz, I = 1.2 Adc)
CQ
NOTE:
2. To Mil–Std–1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.
R
F
C
2
C
8
+
R
F
C
1
2
-
8
Vd c
B
N
IA S
C
9
I
PU T
L
3
C
6
C
7
C
R
1
L
2
C
3
L
4
R
F
O
U
T
P
U
T
C
5
L
1
R F
IN PU T
DU T
C
4
C
1
R
1
C
2
C1, C2 — ARCO 469, 190ā –ā 780 pF
C3, C4 — ARCO 464, 25ā –ā 280 pF
C5 — 120 pF Dipped Mica
L1 — 3 Turns #16 0.25″ ID
L2 — 6 Turns #16 0.5″ ID
L3 — 7 Turns #20 0.38″ ID
C6, C7 — 100 µF, 15 Vdc
L4 — 10 µH Molded Choke Delevan
C8 — 680 pF F.T. Allen Bradley
C9 — 1.0 µF 35 V Tantalum
RFC1 — Ferroxcube VK200/20–4B
RFC2 — 3–Ferroxcube 5653065–3B
CR1 — 1N4997
RF — Input/Output Connectors UG53 A/µ
R1 — 10 Ω 1/2 Watt 10%
Adjust Bias (Base) for I = 20 mA with No RF Applied
CQ
Figure 1. 30 MHz Linear Test Circuit
2
5 0
4 0
3 0
2 0
1 0
4
3
2
0
0
0
f
I
=
3
0
M Hz
f
I
I
=
3
0
,
3
0
.
0
0
1
MH z
=
2
5
m A
V dc
C
Q
=
2
5
m
A
C
Q
V
=
2
8
C
C
M
D
( d3)
=
-
ā
5
d
B
1
0
0
0
1
0
2
0
4
0
6
0
8
0
1
00
6
2
0
2
4
2
8
3 2
P
i
,
n
I
N
P
U
T
P
O
W
E
R
(
m
W
)
V ,
C C
S
U
P
PLY
V
O
L
T
A
G
E
(V O LTS)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
4
3
3
2
0
5
0
5
-
ā
5
-
-
-
-
-
0
5
0
5
0
d
3
d
5
V
=
2
8
V
m A
C
C
f
=
3
0
,
3
0
.
0
0
1
MH z
I
C
=
2
5
Q
2
1
0
5
I
C
=
2
5
m
A
Q
P
ou t
=
2
5
W
P
E
P
V
=
2
8
V
C
C
1
.
5
2
3
5
F
7
1
0
1
5
2
0
3
0
0
1
0
2
0
3
T
0
f
,
R
E
Q
U
E
N
C
Y
(
M
H
z
)
P ,
ou t
O
U
T
P
U
T
P
O
WE
R
(
W
A
T
S
PE P)
Figure 4. Power Gain versus Frequency
Figure 5. Intermodulation Distortion
versus Output Power
5
2
0
.
5
T
=
°
C
2
5
1
5
5
C
.
0
.
2
0
.
1
5
0
.
0
1
2
5
1
0
2
0
5
0
1
0
0
V
C
,
E
C
O
L
LE
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Figure 6. DC Safe Operating Area
3
2
2
1
1
5
0
5
0
0
0
0
0
0
0
0
0
2
5
5
5
V
=
2
8
V
V
C C
=
2
8
V
mA
C
C
I
C
=
2
5
m
A
I
C Q
=
2
5
Q
P
o
=
2
5
W
P
E
P
P
ou t
=
2
5
W
PE P
u
t
1
5
0
0
0
1
.
5
2
3
5
F
7
1
0
1
5
2
0
3
0
1
.
5
2
3
5
7
1
0
1
5
2
0
3 0
f
,
R
EQ
U
E
N
C
Y
(
M
H
z
)
f
,
F
R
E
Q
U
E
N
C
Y
(M Hz)
Figure 7. Output Capacitance versus Frequency
Figure 8. Output Resistance versus Frequency
0
1. 0
1. 0
2
.
0
2
.
0
1. 0
3
.
0
3. 0
3
0
4 .0
4
.
0
2
.
0
5 .0
5
.
0
3. 0
4. 0
1
5
6
.
0
6. 0
V
=
2
8
V
mA
C
C
I
C
=
2
5
Q
7
0
. 5
5. 0
6. 0
7 .0
7
.
0
P
ou t
=
2
5
W
P
E
P
f
Z
i n
O h ms
8 .0
9 . 0
1 0 . 0
8. 0
9. 0
10 . 0
M
H
z
7. 0
8. 0
4
.
2
4
7
.
.
.
0
6
4
3
2
ă
.
.
.
.
2
0
5
5
5
4
-
j
6
5
4
2
0
.
6
5
0
9
7
5
0
5
0
7
0
5
6
2
4
-
-
-
-
j
.
.
.
.
9
.
0
f
=
2
.
0
M
H
z
j
j
j
10 . 0
12 . 0
1
3
5
0
1
.
Z
=
Ω
1
0
o
14 . 0
16 . 0
1
2
.
0
1
2
.
0
1
8
.
0
1
4
.
0
1
4
.
0
2
0
.
0
Figure 9. Series Equivalent Input Impedance
4
PACKAGE DIMENSIONS
A
U
N O TE S :
1. D I MEN S I ON I N G A ND TO LE R AN C I N G P ER AN S I
Y 14. 5M, 198 2.
M
2. C O N TR O LL IN G D I MEN S I ON : I N CH .
M
1
Q
INCHES
DIM MIN MAX
MILLIMETERS
MIN
24. 39
9. 40
5. 82
5. 47
2. 16
3. 81
0. 11
MAX
25. 14
9. 90
7. 13
5. 96
2. 66
4. 57
0. 15
10. 28
50ꢀ ꢀ
4
A
B
C
D
E
H
J
0. 960
0. 370
0. 229
0. 215
0. 085
0. 150
0. 004
0. 395
40ꢀ ꢀ
0. 990
0. 390
0. 281
0. 235
0. 105
0. 108
0. 006
0. 405
50ꢀ ꢀ
B
R
2
3
D
K
M
Q
R
S
U
10. 04
40ꢀ ꢀ
S
K
_
_
_
_
0. 113
0. 245
0. 790
0. 720
0. 130
0. 255
0. 810
0. 730
2. 88
6. 23
3. 30
6. 47
20. 07
18. 29
20. 57
18. 54
S TY LE 1:
P IN 1. E MIT T ER
2. B AS E
3. E MIT T ER
J
C
4. C O LLE C TO R
H
E
SEATING
PLANE
CASE 211–07
ISSUE N
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
5
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MRF427
Power Bipolar Transistor, 6A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 4 Pin
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