NPT1015 [TE]
Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT;
| 型号： | NPT1015 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT |
| 文件： | 总10页 (文件大小：2269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT1015
Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and saturated applications
Tunable from DC-3.5 GHz
28V Operation
Industry Standard Package
High Drain Efficiency (>55%)
Rugged Design Passes 15:1 VSWR test
Reliable with MTTF > 106 at TJ = 200°C
Applications
DC-3.5 GHz
45W
GaN HEMT
Defense Communications
Land Mobile Radio
Avionics
Wireless Infrastructure
ISM Applications
VHF/UHF/L-Band Radar
Product Description
The NPT1015 GaN HEMT is a wideband transistor optimized for DC-3.5 GHz operation. This
device has been designed for CW, pulsed, and linear operation with output power levels to 45W
(46.5 dBm) in an industry standard metal-ceramic package with a bolt down flange. This product
has been designed to be reliable, with a low thermal resistance, and rugged, able to withstand
extreme mismatch on the input and output with no device damage.
RF Specifications (CW, 2.5 GHz): VDS = 28V, IDQ = 400mA, TC= 25°C
Symbol
Parameter
Min
Typ
Max
Units
GSS
Small-signal Gain
-
13.5
-
dB
PSAT
SAT
GP
Saturated Output Power
-
-
47.3
57
-
-
-
-
-
dBm
%
Efficiency at Saturated Output Power
Gain at POUT = 45W
10.5
47
-
12
dB
%
Drain Efficiency at POUT = 45W
Drain Voltage
54
VDS
28
V
Ruggedness: Output Mismatch, All Phase Angles
VSWR = 15:1, No Device Damage
NDS-035 Rev. 2, 121213
Page 1
NPT1015
DC Specifications: TC = 25°C
Symbol
Off Characteristics
IDLK Drain-Source Leakage Current
Parameter
Min
Typ
Max
Units
-
-
-
-
16
8
mA
mA
(VGS=-8V, VDS=100V)
IGLK
Gate-Source Leakage Current
(VGS=-8V, VDS=0V)
On Characteristics
VT
Gate Threshold Voltage
(VDS=28V, ID=16mA)
-2.3
-1.5
-1.2
0.22
9.2
-0.7
V
V
VGSQ
RON
Gate Quiescent Voltage
(VDS=28V, ID=400mA)
-2.1
-0.5
On Resistance
(VDS=2V, ID=120mA)
-
-
-
-
ID, MAX
Maximum Drain Current
(VDS=7V pulsed, 300µS pulse width,
0.2% Duty Cycle)
A
Thermal Resistance Specification:
Symbol
Parameter
Typ
Units
Thermal Resistance (Junction-to-Case),
TJ = 180 °C
2.1
°C/W
RJC
Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in
heatsink.
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
VGS
IG
Drain-Source Voltage
100
-10 to 3
32
V
V
Gate-Source Voltage
Gate Current
mA
W
PT
Total Device Power Dissipation (Derated above 25°C)
Storage Temperature Range
83
TSTG
TJ
-65 to 150
200
°C
°C
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
HBM
Class 1B
NDS-035 Rev. 2, 121213
Page 2
NPT1015
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=400mA, TC=25C unless otherwise noted
Optimum Source and Load Impedances:
(CW Drain Efficiency and Output Power Tradeoff Impedance)
Frequency
(MHz)
PSAT (W)
GSS (dB)
Drain Efficiency
@ PSAT (%)
ZS ()
ZL ()
900
1.1 + j0.7
1.6 - j6.0
1.5 - j6.7
2.6 - j15
6.3 + j1.8
5.4 - j0.6
5.2 - j2.2
3.9 - j6.3
53.7
53.2
50.9
42.0
22.5
15.8
15.0
13.9
65.1
64.8
60.8
55.4
2200
2500
3500
Figure 1: CW Power/Drain Efficiency
Tradeoff Impedances, ZO=10
24
22
70
60
50
40
30
20
10
0
900MHz
2200MHz
2500MHz
3500MHz
900MHz
20
18
16
14
12
10
2200MHz
2500MHz
3500MHz
25
30
35
40
45
50
25
30
35
40
45
50
POUT (dBm)
POUT (dBm)
Figure 2: Gain vs. POUT
Figure 3: Drain Efficiency vs. POUT
NDS-035 Rev. 2, 121213
Page 3
NPT1015
2.5 GHz Narrowband Circuit
(CW, VDS=28V, IDQ=400mA, TC=25C, unless otherwise noted)
Figure 4: Component Placement of 2.5 GHz Narrowband Circuit for NPT1015
Reference
C1, C5
C2, C6
C3, C7
C4, C8
C9, C14
C10
Value
Manufacturer
AVX
Part Number
1210C105KAT2A
C1206C104K1RACTU
1206C103KAT2A
C0805C102K1RACTU
ATC800B100B
1uF
0.1uF
Kemet
AVX
0.01uF
1000pF
10pF
Kemet
ATC
20pF
ATC
ATC800B200B
C11
2.4pF
ATC
ATC600F2R4B
C12
2.2pF
ATC
ATC600F2R2B
C13
10pF
ATC
ATC600F100B
C15
0.6pF
ATC
ATC600F0R6B
L1
19.4nH
15Ω
CoilCraft
Panasonic
Rogers
0806SQ-19NJL
R1
ERJ-2RKF15R0X
Nitronex NBD-139r1
PCB
RO4350, r=3.5, 0.020”
NDS-035 Rev. 2, 121213
Page 4
NPT1015
Typical Performance in 2.5 GHz Narrowband Circuit
(CW, VDS=28V, IDQ=400mA, f=2.5GHz, TC=25C, unless otherwise noted)
Figure 5. Electrical Schematic of 2.5 GHz Narrowband Circuit for NPT1015
(For RF Tuning details see Component Placement Diagram Figure 4)
15
14
13
12
11
10
60
-400C
50
250C
850C
40
30
20
10
0
-400C
250C
850C
25
30
35
40
45
50
25
30
35
40
45
50
POUT (dBm)
POUT (dBm)
Figure 6: Gain vs. POUT
Figure 7: Drain Efficiency vs. POUT
-1.1
100
200mA
-1.2
-1.3
-1.4
-1.5
-1.6
80
60
40
20
0
400mA
600mA
-50
-25
0
25
50
75
100
25
50
75
100
125
150
175
Temperature (oC)
Case Temperature (oC)
Figure 8: Quiescent VGS vs. Temperature
Figure 9: Power De-rating Curve
(TJ = 200°C, TC > 25°C)
NDS-035 Rev. 2, 121213
Page 5
NPT1015
Typical Performance in 2.5 GHz Narrowband Circuit
(CW, VDS=28V, IDQ=400mA, f=2.5GHz, TC=25C, unless otherwise noted)
-15
-20
-25
-30
-35
-40
-45
-50
15.0
14.5
14.0
200mA
300mA
400mA
600mA
800mA
13.5
200mA
300mA
400mA
600mA
800mA
13.0
12.5
12.0
0.1
1
10
100
0.1
1
10
100
POUT (W-PEP)
POUT (W-PEP)
Figure 10: 2-Tone IMD3 vs. POUT vs. IDQ
Figure 11: 2-Tone Gain vs. POUT vs. IDQ
(1MHz Tone Spacing)
(1MHz Tone Spacing)
-20
-25
-30
-35
-40
-45
-50
-55
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
0.1
1
10
100
POUT (W-PEP)
Figure 12: 2-Tone IMD vs. POUT
(1MHz Tone Spacing)
NDS-035 Rev. 2, 121213
Page 6
NPT1015
600-1000 MHz Broadband Circuit
(CW, VDS=28V, IDQ=400mA, TC=25C, unless otherwise noted)
Figure 13: Component Placement of 600-1000 MHz Broadband Circuit for NPT1015
Reference
C1
Value
150uF
Manufacturer
Nichicon
AVX
Part Number
UPW1C151MED
1206C103KAT2A
C1206C104K1RACTU
1210C105KAT2A
ELXY 630ELL271MK25S
ATC100B560J
C2, C5
C3, C6
C4, C7
C8
0.01uF
0.1uF
Kemet
1uF
AVX
270uF
United Chemi-Con
ATC
C9
56pF
C10, C12
C11
100pF
ATC
ATC100B101J
6.8pF
ATC
ATC100B6R8J
R1, R2
R3
0.33Ω
Panasonic
Panasonic
Stackpole
Coilcraft
16 AWG Cu Wire
Rogers
ERJ-6RQFR33V
ERJ-6ENF10R0V
RHC2512FT7R50
0805CS-121XJB
5 turn, 0.2"ID
10Ω
R4, R5
L1
7.5Ω
120nH
L2
~50nH
PCB
RO4350, r=3.5, 0.020”
Nitronex NBD-079r1
NDS-035 Rev. 2, 121213
Page 7
NPT1015
Typical Performance in 600-1000 MHz Broadband Circuit
(CW, VDS=28V, IDQ=400mA, TC=25C, unless otherwise noted)
Figure 14. Electrical Schematic of 600-1000 MHz Broadband Circuit for NPT1015
(For RF Tuning details see Component Placement Diagram Figure 13)
25
20
15
10
5
30
25
20
15
10
80
70
60
50
70
60
50
40
Gain
Gain
Drain Eff
Drain Eff
Psat
40
30
600
700
800
900
1,000
600
700
800
900
1,000
Frequency (MHz)
Frequency (MHz)
Figure 16: Performance vs. Frequency
Figure 15: Performance vs. Frequency
(POUT = PSAT
(POUT = 45dBm)
)
35
30
25
20
15
10
70
60
50
40
30
20
10
20.0
19.0
18.0
17.0
16.0
15.0
-5
-10
-15
-20
-25
-30
S21
S11
S22
Gain
Drain Eff
0
25
30
35
40
POUT (dBm)
45
50
500
600
700
800
900
1,000
Frequency (MHz)
Figure 17: Gain/Drain Efficiency vs. POUT
Figure 18: Small Signal s-parameters vs. Frequency
(f = 700MHz)
NDS-035 Rev. 2, 121213
Page 8
NPT1015
Figure 19 - AC360B-2 Metal-Ceramic Package Dimensions (all dimensions in inches [millimeters])
Function
Gate — RF Input
Drain — RF Output (Cut lead)
Source — Ground (Flange)
NDS-035 Rev. 2, 121213
Page 9
NPT1015
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Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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NDS-035 Rev. 2, 121213
Page 10
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