NPT35050A_15 [TE]
65W RF Power Transistor;
| 型号： | NPT35050A_15 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 65W RF Power Transistor |
| 文件： | 总10页 (文件大小：673K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT35050A
Gallium Nitride 28V, 65W RF Power Transistor
®
Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for CW, pulsed, WiMAX, and other
applications from 3300 – 3800 MHz
• 90W P3dB PEP power
• 65W P3dB CW power
• 6W linear power @ 2.0% EVM for single carrier
OFDM, 10.3dB peak/avg, 3.5MHz channel
bandwidth, 12dB gain, 18% efficiency
• Qualified for operation up to 32V
• 100% RF tested
3300 - 3800 MHz
65 Watt, 28 Volt
GaN HEMT
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to 3A001b.3.a Export Control
RF Specifications (CW): VDS = 28V, IDQ = 750mA, Frequency = 3500MHz, TC = 25°C, Measured in Nitronex Test Fixture
Symbol
Parameter
Min
Typ
Max
Units
P3dB
GSS
h
Average Output Power at 3dB Compression
Small Signal Gain
-
65
12.5
45
-
13.5
-
W
dB
%
11
40
Drain Efficiency at 3dB Compression
Output Mismatch Stress, VSWR = 10:1, all phase
angles at 3500MHz)
No Performance Degradation After Test
Y
Typical 2-Tone Performance: VDS = 28V, IDQ = 750mA, Frequency = 3500MHz, Tone Spacing = 0.1MHz, TC = 25°C
Measured in Load-Pull System
Symbol
Parameter
Typ
Units
P3dB,PEP
P1dB,PEP
PIMD3
Peak Envelope Power at 3dB Compression
Peak Envelope Power at 1dB Compression
Peak Envelope Power at -35dBm IMD3
93
55
71
W
W
W
Typical OFDM Performance: VDS = 28V, IDQ = 750mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms
frame, 15ms frame data, 3.5 MHz channel bandwidth. Peak/Avg. = 10.3dB @ 0.01% probability on CCDF. Frequency =
3400 - 3600MHz. POUT,AVG = 6W, TC = 25°C. Measured in Nitronex Test Fixture
Symbol
Parameter
Typ
Units
GP
h
Power Gain
12
18
dB
%
Drain Efficiency
Error Vector Magnitude
EVM
2.0
%
NPT35050A
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NDS-003 Rev.3, April 2013
NPT35050A
DC Specifications: TC=25°C
Symbol
Off Characteristics
VBDS Drain-Source Breakdown Voltage
Parameter
Min
Typ
Max
Units
100
-
-
-
-
V
(VGS=-8V, IDQ=36mA)
IDLK
Drain-Source Leakage Current
(VGS=-8V, VDS=60V)
18
mA
On Characteristics
VT
VGSQ
RON
ID
Gate Threshold Voltage
(VDS = 28V, IDQ = 36mA)
-2.3
-1.8
-1.5
0.13
19.5
-1.3
-1.0
0.15
-
V
V
W
A
Gate Quiescent Voltage
(VDS = 28V, IDQ = 750mA)
-2.0
On Resistance
(VGS = 2V, IDQ = 270mA)
-
-
Drain Current
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, VGS=2V)
Absolute Maximum Ratings: Not simultaneous, TC=25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
VGS
PT
Drain-Source Voltage
100
-10 to 3
90
V
V
Gate-Source Voltage
Total Device Power Dissipation (Derated above 25°C)
Thermal Resistance (Junction-to-Case)
Storage Temperature Range
W
qJC
1.95
°C/W
°C
TSTG
TJ
-65 to 150
200
Operating Junction Temperature
°C
HBM
MM
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
1C (>1000V)
M3 (>200V)
NPT35050A
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NDS-003 Rev.3, April 2013
NPT35050A
Table 1: Optimum Impedance Characteristics for OFDM Tuning (VDS=28V, IDQ=750 mA).
Frequency (MHz)
Z (W)
S
Z (W)
L
3300
3400
3500
3600
3700
3800
5.0 + j1.5
5.2 + j1.2
6.0 + j0.5
6.4 - j0.2
8.2 - j2.1
10.0 - j4.0
5.5 - j11.0
6.4 - j12.3
8.9 - j14.9
11.6 - j17.2
14.0 - j20.1
16.3 - j22.6
Z
is the source impedance
presented to the device.
S
Z is the load impedance
L
presented to the device.
Figure 1 - Optimal Impedances for OFDM
Performance - VDS = 28V, IDQ = 750mA
NPT35050A
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NDS-003 Rev.3, April 2013
NPT35050A
Marker 1
-25.09 dBm
3.5 GHz
-10
-20
-30
-40
-50
-60
-70
-80
-90
1
3489.50 Mhz
1.75 MHz/div
3510.50 MHz
Figure 2 - Typical OFDM Performance in Nitronex
Figure 3 - ETSI Mask Compliance in Nitronex
Demonstration Board,
Demonstration Board
3500MHz and POUT = 6W
Figure 4 - Typical OFDM Performance in Load-Pull
Figure 5 - Typical OFDM Performance at
System, POUT = 6W
3500MHz versus IDQ
NPT35050A
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NDS-003 Rev.3, April 2013
NPT35050A
Figure 6 - Typical Device Linearity over Temperature
in Nitronex Demonstration Board,
Figure 7 - Typical Device Gain and Efficiency over
Temperature in Nitronex Demonstration Board,
VDS = 28V, IDQ = 750mA, 3400MHz
VDS = 28V, IDQ = 750mA, 3400MHz
Figure 8 - Typical IMD3 Performance at
Figure 9 - Typical S11 and S21 in Nitronex
Demonstration Board,
VDS = 28V, IDQ = 750mA, 3500MHa
PIN = 0 dBm, VDS = 28V, IDQ = 750mA
NPT35050A
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NDS-003 Rev.3, April 2013
NPT35050A
Figure 10 - Power Sweeps for CW, pulsed CW, and
PEP, VDS = 28V, IDQ = 750mA, 3500MHz,
Constant Impedance States for All Sweeps
Figure 11 - Power Sweeps for CW, pulsed CW, and
PEP at VDS = 28V, IDQ = 750mA, 3500MHz,
Constant Impedance States for All Sweeps
100
80
60
40
20
0
0
50
100
150
200
Case Temperature (°C)
Figure 12 - CW Power Sweep,
Figure 13 - Power Derating Curve
VDS = 28V, IDQ = 750mA, 3500MHz
NPT35050A
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NDS-003 Rev.3, April 2013
NPT35050A
V
V
DRAIN
GATE
RF
IN
RF
OUT
Nitronex
NPT35050 - WN2
8/16/2006
Figure 14 - APP-NPT35050A-35 Demonstration Board
NPT35050A
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NDS-003 Rev.3, April 2013
NPT35050A
C2
IC1
C16
C1
P1
R1
V
GATE
C9
C8
R2
V
DRAIN
C11
C3
C4
C5
C10
R3
C17
W=100mil
L=500mil
W=100mil
L=500mil
C6
C7
C13
C12
RF
OUT
RF
IN
W=140mil
L=245mil
W=140mil
L=205mil
W=68mil
L=50mil
W=68mil
L=440mil
W=550mil
L=210mil
W=68mil
L=720mil
W=175mil
L=50mil
W=680mil
L=450mil
C15
W=68mil
L=390mil
C14
Figure 15 - APP-NPT35050A-35 Demonstration Board Equivalent Circuit
Table 1: APP-NPT35050A-35 Demonstration Board Bill of Materials
Component
Value
ID
C1, C2, C3
10 uF
16V Ceramic X7R (1210)
C4, C7
0.01 uF
0.10 uF
1.0 uF
100V Ceramic X7R (1206)
100V Ceramic X7R (1206)
100V CeramicX7R (1812)
ATC600F5R6CT
C5, C8
C6, C9
C10, C11, C12, C13
5.6 pF
C14
C15
C16
C17
R1
1.0 pF
ATC600F1R0AT
1.5 pF
ATC600F1R5AT
150uF
16V, Aluminum Electrolytic - Nichicon (PW)
270uF
63V, Aluminum Electrolytic - UCC (LXY)
12k ohm
10 ohm
0.33 ohm
20k ohm
0603
R2
0805
R3
0805
P1
Potentiometer - Bourns (3224 series)
IC1
IC LT1964-BYP
Substrate
Taconic RF35
t=30mil, e =3.5, 1 oz. Cu
r
NPT35050A
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NDS-003 Rev.3, April 2013
NPT35050A
1
Ordering Information
Part Number
Description
NPT35050A in AC780B-2 Metal-Ceramic Bolt-Down Package
NPT35050AB
1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com
Figure 16 - AC780B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
NPT35050A
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NDS-003 Rev.3, April 2013
NPT35050A
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
Important Notice
Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to
its products and services at any time and to discontinue any product or service without notice. Customers should obtain
the latest relevant information before placing orders and should verify that such information is current and complete. All
products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest
information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at
www.nitronex.com.
Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in
accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex
deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters
of each product is not necessarily performed.
Nitronex assumes no liability for applications assistance or customer product design. Customers are responsible for their
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©Nitronex, LLC 2012. All rights reserved.
NPT35050A
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NDS-003 Rev.3, April 2013
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