PH1819-45A [TE]

Wireless Power Transistor 45 Watts, 1805 - 1880 MHz; 无线功率晶体管45瓦, 1805至80年兆赫
PH1819-45A
型号: PH1819-45A
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

Wireless Power Transistor 45 Watts, 1805 - 1880 MHz
无线功率晶体管45瓦, 1805至80年兆赫

晶体 晶体管 CD 放大器 无线 局域网
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PH1819-45A  
Wireless Power Transistor  
45 Watts, 1805 - 1880 MHz  
Features  
Outline Drawing1  
NPN Silicon Microwave Power Transistor  
-28 dBc Typical 3rd IMD at 45 Watts PEP  
Common Emitter Class AB Operation  
Internal Input and Output Impedance Matching  
Diffused Emitter Ballasting  
Gold Metalization System  
Description  
M/A-COM’s PH11819-45A is a high efficiency silicon bipo-  
lar NPN transistor intended for use as a common emitter  
class AB stage in power amplifiers that operate in the 1805  
to 1880 MHz range. This transistor features internal input  
and output impedance matching, diffused emitter ballasting  
and gold metalization. The PH1819-45A is packaged in a  
low cost, non-hermetic ceramic package which has a very  
low thermal impedance.  
Note: (unless otherwise specified)  
1. Tolerances are: inches ± 0.005” (millimeters ± 0.13mm)  
BroadBand Fixture Impedance  
F (MHz)  
Z IF ()  
Z OF ()  
Absolute Maximum Rating at 25°C  
1805  
1842  
1880  
3.3 + j5.7  
3.1 + j5.6  
2.9 + j5.4  
4.1 + j0.3  
4.5 + j0.2  
4.8 + j0.0  
Parameter  
Symbol  
VCEO  
VCES  
IEBO  
IC  
Rating  
20  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
65  
V
3.0  
V
Z
4.0  
A
OF  
OUTPUT  
Power Dissipation  
PD  
117  
W
INPUT  
Storage Temperature  
Junction Temperature  
Thermal Resistance  
Tstg  
-55 to +150  
200  
°C  
°C  
°C/W  
NETWORK  
NETWORK  
TJ  
θjc  
1.5  
Z
IF  
Electrical Specifications at 25°C  
Symbol  
hFE  
Parameter  
DC Forward Current Gain  
Power Gain  
Collector Efficiency  
Input Return Loss  
Test Conditions  
Min  
15  
9.0  
50  
10  
-
Max  
120  
-
-
Units  
-
dB  
%
dB  
-
VCE=5 V, IC= 1.5 A  
GP  
VCC=25 V, ICQ= 200 mA, POUT = 45W, f = 1805, 1880 MHz  
VCC=25 V, ICQ= 200 mA, POUT = 45W, f = 1805, 1880 MHz  
VCC=25 V, ICQ= 200 mA, POUT = 45W, f = 1805, 1880 MHz  
VCC=25 V, ICQ= 200 mA, POUT = 45W, f = 1805, 1880 MHz  
ηC  
RL  
-
VSWR-T Load Mismatch Tolerance  
2:1  
V2.00  
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087  
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
www.macom.com  
AMP and Connecting at a Higher Level are trademarks.  
Specifications subject to change without notice.  
Wireless Power Transistor 45 Watts 1805-1880 MHz  
PH1819-45A  
Assembly View  
Circuit Dimensions  
Typical Performance Curve  
Schematic  
Gain vs. POUT  
12  
Gain 1842  
Gain 1805  
11  
70  
60  
50  
10  
Gain 1880  
Gain 1805  
Gain 1842  
Gain 1880  
Eff. 1805  
Eff. 1842  
Eff. 1880  
9
Eff. 1880  
8
Eff. 1805  
7
30  
20  
10  
0
Eff. 1842  
6
5
4
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
Pout (Watts)  
3rd Order InterModulation Distortion  
Two Equal Tone (100KHz Offset)  
Two Equal Tone (100KHz Offset)  
-26  
-27  
-28  
-29  
-30  
-31  
-32  
-33  
-34  
-35  
-36  
-37  
-38  
-39  
-40  
1805 MHz  
1805MHz  
1842MHz  
1880MHz  
1842 MHz  
1880 MHz  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
Peak Effective Power (PEP) in Watts  
V2.00  
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087  
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
www.macom.com  
AMP and Connecting at a Higher Level are trademarks.  
Specifications subject to change without notice.  

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