TVB200SA [TE]
PolySwitch SiBar Thyristor Surge Protectors; PolySwitch自SiBar晶闸管浪涌保护器
| 型号： | TVB200SA |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | PolySwitch SiBar Thyristor Surge Protectors |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Tyco/Electronics
PRODUCT: TVB200SA
PolySwitch®
SiBar
Thyristor Surge Protectors
Raychem Corporation
308 Constitution Drive
Menlo Park, CA 94025
800-227-4856
DOCUMENT: 24304
PCN: 732781
REV LETTER: B
REV DATE: AUGUST 16, 2001
PAGE NO.: 1 OF 2
FAX 800-227-4866
Specification Status: RELEASED
PHYSICAL DESCRIPTION
A
B
C
D*
MAX
H
J
K
P
S
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MIN
MAX
MIN
MAX
MIN
MAX
REF
MIN
MAX
mm: 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 .051 .152 0.15 0.30 0.76
in: .160 .180 .130 .150 .075 .095 .077 .083 .002 .006 .006 .012 .030
* D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P
1.27
.050
0.51 5.21 5.59
.020 .205 .220
Other Physical Characteristics
Form Factor:
Lead Material:
SMB (Surface Mount DO-214 Package)
Tin/lead finish
Encapsulation Material:
Solderability:
Solder Heat Withstand:
Solvent Resistance:
Mechanical Shock:
Epoxy, meets UL94 V-0 requirements
per MIL-STD-750, Method 2026
per MIL-STD-750, Method 2031
per MIL-STD-750, Method 1022
per MIL-STD-750, Method 2016
Tape and Reel packaging per EIA 481-1
Tyco/Electronics
PRODUCT: TVB200SA
PolySwitch®
SiBar
Thyristor Surge Protectors
Raychem Corporation
308 Constitution Drive
Menlo Park, CA 94025
800-227-4856
DOCUMENT: 24304
PCN: 732781
REV LETTER: B
REV DATE: AUGUST 16, 2001
PAGE NO.: 2 OF 2
FAX 800-227-4866
DEVICE RATINGS @ 25º C (Both Polarities)
Parameter
Off-State Voltage, Maximum at ID = 5 µA
Non-Repetitive Peak Impulse Current
Double exponential waveform (Notes 1 and 2)
Symbol
VDM
IPP1
Value
200
50
70
100
Units
V
A
A
A
10x1000 µsec
10/560 µsec
10/160 µsec
IPP2
IPP3
Critical Rate of Rise of On-State Current
di/dt
150
A/µs
Maximum 2x10 µsec waveform, VOC=2.5kV, ISC=500A peak
DEVICE THERMAL RATINGS
Storage Temperature Range
Operating Temperature Range
Blocking or conducting state
Overload Junction Temperature
Maximum; Conducting state only
-65 to 150
-40 to 125
ºC
ºC
TSTG
TA
+175
ºC
TJ
ELECTRICAL CHARACTERISTICS Both polarities (TJ @ 25ºC unless otherwise noted)
Characteristics
Breakover Voltage
dV/dt = 100V/µsec, ISC=1.0A, VDC = 1000V
Symbol
VBO
Min
----
Typ
260
Max
320
Units
V
(+25ºC)
(+25ºC)
Breakover Voltage
----
260
320
V
VBO
f=60Hz, ISC=1.0Arms, VOC = 1000Vrms,
R=1.0 kΩ, t = 0.5 cycle (Note 2)
Breakover Voltage Temperature Coefficient
Off-State Current
----
----
----
0.08
-----
-----
-----
2.0
5.0
%/ºC
µA
µA
dVBO/dTJ
ID1
(VD1= 50V)
(VD2= VDM)
(IT=1A)
ID2
VT
----
-----
5.0
V
On-State Voltage
PW ≤ 300 µsec, Duty Cycle ≤ 2% (Note 2)
Breakover Current
Holding Current (Note 2)
----
175
2000
230
350
----
-----
----
----
mA
mA
V/µs
IBO
IH
dv/dt
Critical Rate of Rise of Off-State Voltage
(Linear waveform, VD = 0.8 X Rated VBO, TJ= +25ºC)
Capacitance (f=1.0 Mhz, 50VDC bias, 1 Vrms)
(f=1.0 Mhz, 2VDCbias, 15mVrms)
----
----
20
50
----
pF
pF
C1
C2
Note 1. Allow cooling before test second polarity
Note 2. Measured under pulse conditions to reduce heating
VOLTAGE-CURRENT CHARACTERISTIC
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