MBR3045CTR [THINKISEMI]
30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers;
| 型号： | MBR3045CTR |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers |
| 文件： | 总2页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR3035CTR thru MBR30200CTR
MBR3035CTR thru MBR30200CTR
Pb Free Plating Product
30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers
Unit : inch (mm)
TO-220AB
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
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ꢀ
ꢀ
ꢀ
ꢀ
Standard MBR matured technology with high reliablity
Low forward voltage drop
.139(3.55)
MIN
.054(1.39)
.045(1.15)
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
.1(2.54)
.1(2.54)
ꢀ
ꢀ
ꢀ
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Case: Heatsink TO-220AB open type
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
Polarity: As marked on diode body
Mounting position: Any
method 208
Case
Case
Case
Case
Doubler
Series
Negative
Positive
Weight: 2.0 gram approximately
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "CTD" Suffix "CTS"
Suffix "CT"
Suffix "CTR"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT
CTR
35
CTR
45
CTR
50
CTR
60
CTR
90
CTR
100
70
CTR
150
105
150
CTR
200
140
200
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
V
V
V
A
24
31
35
42
63
Maximum DC blocking voltage
35
45
50
60
90
100
Maximum average forward rectified current
IF(AV)
30
30
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
IRRM
200
A
A
Peak repetitive reverse surge current (Note 1)
1
0.5
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25℃
0.70
0.75
0.84
0.95
IF=15A, TJ=125℃
VF
0.60
0.82
0.73
0.65
0.90
0.78
0.70
0.94
0.82
0.80
1.05
0.92
V
IF=30A, TJ=25℃
IF=30A, TJ=125℃
0.2
Maximum reverse current @ rated VR TJ=25 ℃
IR
mA
TJ=125 ℃
20
15
10
Voltage rate of change (Rated VR)
Typical thermal resistance
10000
1.5
dV/dt
RθJC
TJ
V/μs
℃
/W
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
℃
TSTG
℃
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
MBR3035CTR thru MBR30200CTR
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT PER LEG
35
30
25
20
15
10
5
225
200
175
150
125
100
75
8.3ms Single Half Sine Wave
JEDEC Method
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0
50
50
60
70
80
90 100 110 120 130 140 150
1
10
100
CASE TEMPERATURE (oC)
NUMBER OF CYCLES AT 60 Hz
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
100
10
Pulse Width=300μs
1% Duty Cycle
TJ=125℃
TJ=75℃
10
1
MBR3035CTR-MBR3045CTR
1
MBR3050CTR-MBR3060CTR
MBR3090CTR-MBR30100CTR
MBR30150CTR-MBR30200CTR
0.1
TJ=25℃
0.1
0.01
0.01
0.001
MBR3035CTR-MBR3045CTR
MBR3050CTR-MBR30200CTR
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2
0
20
40
60
80
100
120
140
FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
10000
100
10
1
f=1.0MHz
Vsig=50mVp-p
MBR3035CTR-MBR3045CTR
MBR3050CTR-MBR3060CTR
MBR3090CTR-MBR30200CTR
1000
100
0.1
0.1
1
10
100
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
T-PULSE DURATION(s)
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/
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