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UF1600N [THINKISEMI]

16Ampere Heat Sink Dual Common Anode High Efficiency Rectifiers;
UF1600N
型号： UF1600N
厂家： Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述：

16Ampere Heat Sink Dual Common Anode High Efficiency Rectifiers
文件： 总3页 (文件大小：3795K)
中文：  中文翻译
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FFPF60SA60DSTU  
FFPF60SA60DSTU  
Pb Free Plating Product  
16Amperes,600Volts Insulated Dual Series Connection Ultra Fast Soft Recovery Rectifiers  
ITO-220AB/TO-220F-3L  
Unit : inch (mm)  
APPLICATION  
.189(4.8)  
.406(10.3)  
.165(4.2)  
.381(9.7)  
· Freewheeling, Snubber, Clamp  
· Inversion Welder  
· PFC  
.134(3.4)  
.130(3.3)  
.114(2.9)  
.118(3.0)  
· Plating Power Supply  
· Ultrasonic Cleaner and Welder  
· Converter & Chopper  
· UPS  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
PRODUCT FEATURE  
· Ultrafast Recovery Time  
.1  
(2.55)  
.1  
(2.55)  
· Soft Recovery Characteristics  
· 150 Operating Junction Temperature  
℃
Case  
Case  
Case  
Case  
· Low Forward Voltage  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "DD" Suffix "DS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "DN" Suffix "DP"  
Positive  
· High Surge Current Capability  
· Low Leakage Current  
GENERAL DESCRIPTION  
FFPF60SA60DSTU using ThinkiSemi lastest FRED FAB process(planar passivation pellet) with ultrafast soft recovery characteristics.  
Absolute Maximum Ratings (per leg) T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
600  
600  
600  
8
Units  
V
V
V
Peak Repetitive Reverse Voltage  
V
V
V
A
A
RRM  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RWM  
R
I
I
Average Rectified Forward Current  
Non-repetitive Peak Surge Current  
@ T = 95 °C  
C
F(AV)  
FSM  
80  
60Hz Single Half-Sine Wave  
P
Power Dissipation  
26  
20  
W
mJ  
°C  
D
W
Avalanche Energy (1A, 40mH)  
Operating Junction and Storage Temperature  
AVL  
T
T
- 65 to +150  
J, STG  
Thermal Characteristics  
Symbol  
Parameter  
Value  
3.125  
62.5  
Units  
°C/W  
°C/W  
R
R
Maximum Thermal Resistance, Junction to Case  
Maximum Thermal Resistance, Junction to Ambient  
θJC  
θJA  
Page 1/3  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
FFPF60SA60DSTU  
Electrical Characteristics (per leg) T =25 °C unless otherwise noted  
C
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Units  
V
Maximum Instantaneous Forward Voltage  
V
FM  
*
I
I
= 8A  
= 8A  
T
T
= 25 °C  
= 125 °C  
-
-
2.0  
1.6  
2.4  
2.0  
F
F
C
C
I
Maximum Instantaneous Reverse Current  
@ rated V  
µA  
RM  
*
T
T
= 25 °C  
= 125 °C  
-
-
-
-
100  
1000  
R
C
C
t
t
Maximum Reverse Recovery Time  
(I =1A, di/dt = 100A/µs, V = 30V)  
-
-
25  
30  
ns  
ns  
rr  
F
R
Maximum Reverse Recovery Time  
-
-
rr  
(I =8A, di/dt = 100A/µs, V = 30V)  
F
R
t
I
Q
Reverse Recovery Time  
Reverse Recovery Current  
Reverse Recovery Charge  
-
-
-
39  
2
39  
-
-
-
ns  
A
nC  
rr  
rr  
rr  
(I =8A, di/dt = 200A/µs, V = 390V)  
F
R
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%  
Typical Characteristics  
10  
TC = 150oC  
TC = 150oC  
100  
10  
1
TC = 25oC  
TC = 125oC  
TC = 100oC  
TC = 125oC  
TC = 100oC  
1
TC = 25oC  
0.1  
0.1  
0.001  
0
0.5  
1.0  
1.5  
2.0  
2.5  
50 100 150 200 250 300 350 400 450 500 550 600  
Forward Voltage , VF [V]  
Reverse Voltage , VR [V]  
Figure 1. Typical Forward Voltage Drop  
vs. Forward Current  
Figure 2. Typical Reverse Current  
vs. Reverse Voltage  
200  
44  
42  
40  
38  
36  
34  
32  
30  
28  
26  
IF = 8A  
Tc = 25oC  
Typical Capacitance  
at 0V = 169.3 pF  
150  
100  
50  
0.1  
1
10  
100  
100  
200  
300  
400  
500 600  
Reverse Voltage , VR [V]  
di/dt [A/µs]  
Figure 3. Typical Junction Capacitance  
Figure 4. Typical Reverse Recovery Time  
vs. di/dt  
Page 2/3  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
FFPF60SA60DSTU  
Typical Characteristics (Continued)  
10  
6
IF = 8A  
TC = 25oC  
5
4
3
2
1
0
5
0
60  
80  
100  
120  
140  
160  
100  
200  
300  
400  
500 600  
Case Temperature , TC [oC]  
di/dt [A/µs]  
Figure 5. Typical Reverse Recovery Current  
vs. di/dt  
Figure 6. Forward Curent Derating Curve  
Test Circuits and Waveforms  
VGE AMPLITUDE AND  
RG CONTROL dIF/dt  
t1 AND t2 CONTROL IF  
L
dIF  
trr  
IF  
dt  
ta  
tb  
DUT  
CURRENT  
SENSE  
0
RG  
+
-
VDD  
0.25 IRM  
IRM  
VGE  
MOSFET  
t1  
t2  
Figure 7. t Test Circuit  
Figure 8. t Waveforms and Definitions  
rr  
rr  
I = 1A  
L = 40mH  
R < 0.1Ω  
V
E
= 50V  
DD  
2
= 1/2LI [V  
/(V  
- V )]  
AVL  
R(AVL)  
R(AVL) DD  
Q
= IGBT (BV  
> DUT V  
)
1
CES  
R(AVL)  
V
L
R
AVL  
+
CURRENT  
SENSE  
I
I
L
L
Q1  
V
DD  
I
V
DUT  
-
t
t
t
2
t
0
1
Figure 9. Avalanche Energy Test Circuit  
Figure 10. Avalanche Current and Voltage Waveforms  
Page 3/3  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  

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