AMC1306E05DWVR [TI]
具有曼彻斯特编码的 ±50mV 输入、精密电流检测增强型隔离式调制器 | DWV | 8 | -40 to 125;型号: | AMC1306E05DWVR |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有曼彻斯特编码的 ±50mV 输入、精密电流检测增强型隔离式调制器 | DWV | 8 | -40 to 125 光电二极管 |
文件: | 总45页 (文件大小:2010K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
具有高 CMTI 的 AMC1306x 小型、高精度、增强型
隔离式 Δ-Σ 调制器
1 特性
3 说明
1
•
针对基于分流电阻器的电流测量进行优化的引脚可
兼容系列:
AMC1306 是一款高精度 Δ-Σ 调制器,通过抗电磁干扰
性能极强的电容式双隔离层将输出与输入电路隔离开。
该隔离层经过认证,可以按照 DIN VDE V 0884-11 和
UL1577 标准提供高达 7000VPEAK 的增强型隔离。与
隔离式电源结合使用时,该隔离式调制器可将以不同共
模电压等级运行的系统的各器件隔开,并防止较低电压
器件损坏。
–
–
输入电压范围为 ±50mV 或 ±250mV
曼彻斯特编码或未编码的位流选项
•
出色的直流性能:
–
–
–
–
失调电压误差:±50µV 或 ±100µV(最大值)
温漂:1µV/°C(最大值)
增益误差:±0.2%(最大值)
AMC1306 的输入针对直接连接分流电阻器或其他低电
压等级信号源进行了优化。器件具有独特的 ±50mV 低
输入电压范围,可通过分流器显著降低功率耗散,同时
具有出色的交流和直流性能。AMC1306 的输出位流采
用曼彻斯特编码 (AMC1306Ex) 或未编码
增益漂移:±40ppm/°C(最大值)
•
•
•
瞬态抗扰性:100kV/µs(典型值)
系统级诊断 功能
安全相关认证:
–
–
–
7000VPEAK 增强型隔离,符合 DIN VDE V
0884-11: 2017-01 标准
(AMC1306Mx),具体情况因导数而异。通过使用集成
式数字滤波器(如 TMS320F2807x 或
符合 UL1577 标准且长达 1 分钟的 5000VRMS
隔离
TMS320F2837x 微控制器系列中的滤波器)来抽取位
流,该器件可在 78kSPS 数据速率下实现 85dB 动态
范围的 16 位分辨率。
符合 CAN/CSA No. 5A 组件验收服务通知和
IEC 62368-1 终端设备标准
•
完整的额定工作温度范围:–40°C 至 +125°C
曼彻斯特编码的 AMC1306Ex 版本的位流输出支持单
线数据和时钟传输,无需考虑接收设备的设置和保持时
间要求。
2 应用
•
基于分流电阻器的电流感应和隔离式电压测量,包
括:
器件信息(1)
器件型号
封装
SOIC (8)
封装尺寸(标称值)
–
–
–
工业电机驱动
AMC1306x
5.85mm × 7.50mm
光电逆变器
不间断电源
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
简化原理图
Floating
Power Supply
HV+
AMC1306Mx
3.3 V or 5.0 V
AVDD
DVDD
3.0 V, 3.3 V, or 5.0 V
AGND
AINN
AINP
DGND
DOUT
CLKIN
TMS320F28x7x
Optional
Optional
RSHUNT
To Load
SD-Dx
Optional
SD-Cx
PWMx
HV-
1
本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。 有关适用的官方英文版本的最新信息,请访问 www.ti.com,其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SBAS734
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
www.ti.com.cn
目录
8.1 Overview ................................................................. 21
8.2 Functional Block Diagram ....................................... 21
8.3 Feature Description................................................. 22
8.4 Device Functional Modes........................................ 26
Application and Implementation ........................ 27
9.1 Application Information............................................ 27
9.2 Typical Applications ................................................ 28
1
2
3
4
5
6
7
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Device Comparison Table..................................... 4
Pin Configuration and Functions......................... 4
Specifications......................................................... 5
7.1 Absolute Maximum Ratings ...................................... 5
7.2 ESD Ratings.............................................................. 5
7.3 Recommended Operating Conditions....................... 5
7.4 Thermal Information.................................................. 5
7.5 Power Ratings........................................................... 5
7.6 Insulation Specifications............................................ 6
7.7 Safety-Related Certifications..................................... 7
7.8 Safety Limiting Values .............................................. 7
7.9 Electrical Characteristics: AMC1306x05................... 8
7.10 Electrical Characteristics: AMC1306x25............... 10
7.11 Switching Characteristics...................................... 12
7.12 Insulation Characteristics Curves ......................... 13
7.13 Typical Characteristics.......................................... 14
Detailed Description ............................................ 21
9
10 Power Supply Recommendations ..................... 33
11 Layout................................................................... 34
11.1 Layout Guidelines ................................................. 34
11.2 Layout Example .................................................... 34
12 器件和文档支持 ..................................................... 35
12.1 器件支持................................................................ 35
12.2 文档支持................................................................ 35
12.3 相关链接................................................................ 35
12.4 接收文档更新通知 ................................................. 35
12.5 社区资源................................................................ 35
12.6 商标....................................................................... 35
12.7 静电放电警告......................................................... 35
12.8 Glossary................................................................ 36
13 机械、封装和可订购信息....................................... 36
8
4 修订历史记录
Changes from Revision B (June 2018) to Revision C
Page
•
已更改 更改了安全相关认证 项目符号(位于特性 部分):将 VDE 认证 版本从 DIN V VDE V 0884-10 (VDE V 0884-
11) 更改为 DIN VDE V 0884-11,并将 IEC 60950-1 和 IEC 60065 更改为 IEC 62368-1..................................................... 1
•
•
•
已更改 将 DIN V VDE V 更改为 DIN VDE V(位于说明 部分)............................................................................................. 1
Changed CLR and CPG values from ≥ 9 mm to ≥ 8.5 mm in Insulation Specifications table ............................................... 6
Changed Insulation Specifications table header row from DIN V VDE V 0884-11 (VDE V 0884-11): 2017-01 to DIN
VDE V 0884-11: 2017-01 ....................................................................................................................................................... 6
•
•
•
•
•
Changed VDE certification details in Safety-Related Certifications table............................................................................... 7
Changed Safety Limiting Values table format as per current standard.................................................................................. 7
Changed free air to ambient in condition statement of Switching Characteristics table ...................................................... 12
Changed 6.05 dB to 6.02 dB in Equation 3.......................................................................................................................... 27
Changed input common-mode voltage from 2 V to 1.9 V for consistency with Input Bias Current vs Common-Mode
Input Voltage figure in What To Do and What Not To Do section........................................................................................ 32
•
•
Changed VINx to AINx in Layout Guidelines section ........................................................................................................... 34
Changed Recommended Layout of the AMC1306x figure to include connection to the shunt resistor and input filter
components .......................................................................................................................................................................... 34
Changes from Revision A (July 2017) to Revision B
Page
•
Changed Reinforced Isolation Capacitor Lifetime Projection figure .................................................................................... 13
Changes from Original (March 2017) to Revision A
Page
•
•
•
AMC1306E05 和 AMC1306M05 已投入生产.......................................................................................................................... 1
已添加 向第一个直流性能 子项目符号中添加了 ±50µV,以反映 AMC1306x05 器件的情况.................................................. 1
已更改 将第一个安全相关认证 子项目符号中的标准偏差从 0884-10 更改为 0884-11 ........................................................... 1
2
版权 © 2017–2020, Texas Instruments Incorporated
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
www.ti.com.cn
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
•
•
•
•
•
•
•
已更改 将 VPEAK 从 8000 更改为 7000,将标准偏差从 0884-10 变更为 0884-11(均位于说明 部分的第一段) .................. 1
Deleted Status column from Device Comparison Table......................................................................................................... 4
Changed standard deviation from 0884-10 to 0884-11 in DIN V VDE V 0884-11 section of Insulation Specifications table 6
Changed standard deviation from 0884-10 to 0884-11 in Safety-Related Certifications table .............................................. 7
Changed prevent to minimize in condition statement of Safety Limiting Values table........................................................... 7
Added Electrical Characteristics: AMC1306x05 table ........................................................................................................... 8
Changed test conditions of Analog Inputs test conditions from (AINP – AINN) / 2 to AGND to (AINP + AINN) / 2 to
AGND to include all possible conditions............................................................................................................................... 10
•
•
•
•
•
Changed IIB test condition from Inputs shorted to AGND to AINP = AINN = AGND, IIB = IIBP + IIBN .................................... 10
Added AINP = AINN = AGND to EO parameter test conditions .......................................................................................... 10
Changed minus sign to plus or minus sign in typical specification of EG parameter ........................................................... 10
Changed 10% to 90% to 90% to 10% in test conditions of tf parameter ............................................................................ 12
Added AMC1306x05 devices to Typical Characteristics section ........................................................................................ 14
Copyright © 2017–2020, Texas Instruments Incorporated
3
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
www.ti.com.cn
5 Device Comparison Table
DIFFERENTIAL INPUT
RESISTANCE
PART NUMBER
INPUT VOLTAGE RANGE
DIGITAL OUTPUT INTERFACE
AMC1306E05
AMC1306E25
AMC1306M05
AMC1306M25
±50 mV
±250 mV
±50 mV
4.9 kΩ
22 kΩ
4.9 kΩ
22 kΩ
Manchester coded CMOS
Manchester coded CMOS
Uncoded CMOS
±250 mV
Uncoded CMOS
6 Pin Configuration and Functions
DWV Package
8-Pin SOIC
Top View
AVDD
AINP
1
2
3
4
8
7
6
5
DVDD
CLKIN
DOUT
DGND
AINN
AGND
Not to scale
Pin Functions
PIN
I/O
NO.
NAME
DESCRIPTION
Analog (high-side) power supply, 3.0 V to 5.5 V.
1
AVDD
—
See the Power Supply Recommendations section for decoupling recommendations.
2
3
4
5
6
7
AINP
AINN
I
I
Noninverting analog input
Inverting analog input
AGND
DGND
DOUT
CLKIN
—
—
O
I
Analog (high-side) ground reference
Digital (controller-side) ground reference
Modulator data output. This pin is a Manchester coded output for AMC1306Ex derivates.
Modulator clock input: 5 MHz to 21 MHz (5-V operation) with internal pulldown resistor (typical value: 1.5 MΩ)
Digital (controller-side) power supply, 2.7 V to 5.5 V.
See the Power Supply Recommendations section for decoupling recommendations.
8
DVDD
—
4
Copyright © 2017–2020, Texas Instruments Incorporated
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
www.ti.com.cn
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
7 Specifications
7.1 Absolute Maximum Ratings(1)
MIN
–0.3
MAX
6.5
UNIT
V
Supply voltage
AVDD to AGND or DVDD to DGND
Analog input voltage at AINP, AINN
Digital input or output voltage at CLKIN or DOUT
Input current to any pin except supply pins
Junction temperature, TJ
AGND – 6
DGND – 0.5
–10
AVDD + 0.5
DVDD + 0.5
10
V
V
mA
°C
°C
150
Storage temperature, Tstg
–65
150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
±2000
±1000
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
V(ESD)
Electrostatic discharge
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
MIN
3.0
NOM
5.0
MAX
5.5
UNIT
V
AVDD
DVDD
TA
Analog (high-side) supply voltage (AVDD to AGND)
Digital (controller-side) supply voltage (DVDD to DGND)
Operating ambient temperature
2.7
3.3
5.5
V
–40
125
°C
7.4 Thermal Information
AMC1306x
DWV (SOIC)
8 PINS
112.2
(1)
THERMAL METRIC
UNIT
RθJA
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top) Junction-to-case (top) thermal resistance
47.6
RθJB
ψJT
Junction-to-board thermal resistance
60.0
Junction-to-top characterization parameter
Junction-to-board characterization parameter
23.1
ψJB
60.0
RθJC(bot) Junction-to-case (bottom) thermal resistance
n/a
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Power Ratings
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
91.85
86.90
UNIT
AMC1306Ex, AVDD = DVDD = 5.5 V
AMC1306Mx, AVDD = DVDD = 5.5 V
Maximum power dissipation
(both sides)
PD
mW
Maximum power dissipation
(high-side supply)
PD1
PD2
AVDD = 5.5 V
53.90
mW
mW
AMC1306Ex, DVDD = 5.5 V
AMC1306Mx, DVDD = 5.5 V
37.95
33.00
Maximum power dissipation
(low-side supply)
Copyright © 2017–2020, Texas Instruments Incorporated
5
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
www.ti.com.cn
7.6 Insulation Specifications
over operating ambient temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VALUE
UNIT
GENERAL
CLR
CPG
External clearance(1)
External creepage(1)
Shortest pin-to-pin distance through air
≥ 8.5
≥ 8.5
mm
mm
Shortest pin-to-pin distance across the package surface
Minimum internal gap (internal clearance) of the double insulation
(2 × 0.0105 mm)
DTI
CTI
Distance through insulation
≥ 0.021
mm
V
Comparative tracking index
Material group
DIN EN 60112 (VDE 0303-11); IEC 60112
According to IEC 60664-1
≥ 600
I
Rated mains voltage ≤ 300 VRMS
I-IV
I-IV
I-III
Overvoltage category per IEC 60664-1 Rated mains voltage ≤ 600 VRMS
Rated mains voltage ≤ 1000 VRMS
DIN VDE V 0884-11: 2017-01(2)
Maximum repetitive peak isolation
voltage
VIORM
VIOWM
At ac voltage (bipolar)
2121
VPK
At ac voltage (sine wave)
1500
2121
7000
8400
VRMS
VDC
Maximum-rated isolation working
voltage
At dc voltage
VTEST = VIOTM, t = 60 s (qualification test)
VTEST = 1.2 × VIOTM, t = 1 s (100% production test)
VIOTM Maximum transient isolation voltage
VIOSM Maximum surge isolation voltage(3)
VPK
VPK
Test method per IEC 60065, 1.2/50-μs waveform,
VTEST = 1.6 × VIOSM = 12800 VPK (qualification)
8000
Method a, after input/output safety test subgroup 2/3,
Vini = VIOTM, tini = 60 s,
≤ 5
Vpd(m) = 1.2 × VIORM = 2545 VPK, tm = 10 s
Method a, after environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s,
Vpd(m) = 1.6 × VIORM = 3394 VPK, tm = 10 s
qpd
Apparent charge(4)
pC
≤ 5
≤ 5
Method b1, at routine test (100% production) and preconditioning
(type test), Vini = VIOTM, tini = 1 s,
Vpd(m) = 1.875 × VIORM = 3977 VPK, tm = 1 s
CIO
RIO
Barrier capacitance, input to output(5)
VIO = 0.5 VPP at 1 MHz
~1
> 1012
> 1011
> 109
pF
VIO = 500 V at TA = 25°C
Insulation resistance, input to output(5) VIO = 500 V at 100°C ≤ TA ≤ 125°C
Ω
VIO = 500 V at TS = 150°C
Pollution degree
Climatic category
2
40/125/21
UL1577
VTEST = VISO = 5000 VRMS or 7000 VDC, t = 60 s (qualification),
VTEST = 1.2 × VISO = 6000 VRMS, t = 1 s (100% production test)
VISO
Withstand isolation voltage
5000
VRMS
(1) Apply creepage and clearance requirements according to the specific equipment isolation standards of an application. Care must be
taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed
circuit board (PCB) do not reduce this distance. Creepage and clearance on a PCB become equal in certain cases. Techniques such as
inserting grooves and ribs on the PCB are used to help increase these specifications.
(2) This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by
means of suitable protective circuits.
(3) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(4) Apparent charge is electrical discharge caused by a partial discharge (pd).
(5) All pins on each side of the barrier are tied together, creating a two-pin device.
6
Copyright © 2017–2020, Texas Instruments Incorporated
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
www.ti.com.cn
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
7.7 Safety-Related Certifications
VDE
UL
Certified according to DIN VDE V 0884-11: 2017-01, DIN EN
62368-1: 2016-05, EN 62368-1: 2014, and IEC 62368-1: 2014
Recognized under 1577 component recognition and
CSA component acceptance NO 5 programs
Reinforced insulation
Single protection
File number: DIN 40040142
File number: E181974
7.8 Safety Limiting Values
Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
θJA = 112.2°C/W, AVDD = DVDD = 5.5 V,
202.5
TJ = 150°C, TA = 25°C
θJA = 112.2°C/W, AVDD = DVDD = 3.6 V,
TJ = 150°C, TA = 25°C
θJA = 112.2°C/W, TJ = 150°C, TA = 25°C
IS
Safety input, output, or supply current
mA
R
309.4
PS
TS
Safety input, output, or total power
Maximum safety temperature
R
1114(1)
150
mW
°C
(1) The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ, specified for the device. The IS
and PS parameters represent the safety current and safety power, respectively. Do not exceed the maximum limits of IS and PS. These
limits vary with the ambient temperature, TA.
The junction-to-air thermal resistance, RθJA, in the Thermal Information table is that of a device installed on a high-K test board for
leaded surface-mount packages. Use these equations to calculate the value for each parameter:
TJ = TA + RθJA × P, where P is the power dissipated in the device.
TJ(max) = TS = TA + RθJA × PS, where TJ(max) is the maximum junction temperature.
PS = IS × AVDDmax + IS × AVDDmax, where AVDDmax is the maximum high-side supply voltage and DVDDmax is the maximum controller-
side supply voltage.
Copyright © 2017–2020, Texas Instruments Incorporated
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AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
www.ti.com.cn
7.9 Electrical Characteristics: AMC1306x05
minimum and maximum specifications apply from TA = –40°C to +125°C, AVDD = 3.0 V to 5.5 V, DVDD = 2.7 V to 5.5 V,
AINP = –50 mV to 50 mV, AINN = AGND, and sinc3 filter with OSR = 256 (unless otherwise noted); typical specifications are
at TA = 25°C, CLKIN = 20 MHz, AVDD = 5 V, and DVDD = 3.3 V
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ANALOG INPUTS
VClipping Differential input voltage before clipping output
VIN = AINP – AINN
±64
mV
mV
V
FSR
Specified linear differential full-scale
Absolute common-mode input voltage(1)
Operating common-mode input voltage
Common-mode overvoltage detection level(2)
Single-ended input capacitance
Differential input capacitance
Input bias current
VIN = AINP – AINN
–50
–2
50
AVDD
(AINP + AINN) / 2 to AGND
(AINP + AINN) / 2 to AGND
(AINP + AINN) / 2 to AGND
AINN = AGND
VCM
VCMov
CIN
–0.032
AVDD - 2
AVDD – 2.1
V
V
4
2
pF
pF
μA
kΩ
kΩ
nA
kV/μs
CIND
IIB
AINP = AINN = AGND, IIB = IIBP + IIBN
AINN = AGND
–97
50
–72
4.75
4.9
–57
RIN
Single-ended input resistance
Differential input resistance
RIND
IIO
Input offset current
±10
100
CMTI
Common-mode transient immunity
AINP = AINN, fIN = 0 Hz,
–99
VCM min ≤ VIN ≤ VCM max
CMRR Common-mode rejection ratio
dB
AINP = AINN, fIN from 0.1 Hz to 50 kHz,
–98
800
VCM min ≤ VIN ≤ VCM max
BW
DC ACCURACY
Input bandwidth(3)
kHz
DNL
Differential nonlinearity
Resolution: 16 bits
–0.99
–4
0.99
4
LSB
LSB
Resolution: 16 bits, 4.5 V ≤ AVDD ≤ 5.5 V
Resolution: 16 bits, 3.0 V ≤ AVDD ≤ 3.6 V
Initial, at 25°C, AINP = AINN = AGND
±1
±1.5
INL
Integral nonlinearity(4)
–5
5
EO
Offset error
Offset error thermal drift(5)
–50
–1
±2.5
50
1
µV
TCEO
EG
±0.25
±0.005%
±20
μV/°C
Gain error
Gain error thermal drift(6)
Initial, at 25°C
–0.2%
–40
0.2%
40
TCEG
ppm/°C
dB
AINP = AINN = AGND,
3.0 V ≤ AVDD ≤ 5.5 V, at dc
–108
PSRR
Power-supply rejection ratio
AINP = AINN = AGND,
3.0 V ≤ AVDD ≤ 5.5 V,
10 kHz, 100-mV ripple
–107
AC ACCURACY
SNR
Signal-to-noise ratio
fIN = 1 kHz
fIN = 1 kHz
78
82.5
82.3
dB
dB
SINAD Signal-to-noise + distortion
77.5
4.5 V ≤ AVDD ≤ 5.5 V,
5 MHz ≤ fCLKIN ≤ 21 MHz, fIN = 1 kHz
–98
–84
–83
THD
Total harmonic distortion
dB
dB
3.0 V ≤ AVDD ≤ 3.6 V,
5 MHz ≤ fCLKIN ≤ 20 MHz, fIN = 1 kHz
–93
100
SFDR
Spurious-free dynamic range
fIN = 1 kHz
83
(1) Steady-state voltage supported by the device in case of a system failure. See specified common-mode input voltage VCM for normal
operation. Observe analog input voltage range as specified in the Absolute Maximum Ratings table.
(2) The common-mode overvoltage detection level has a typical hysteresis of 90 mV.
(3) This is the –3-dB, second-order roll-off frequency of the integrated differential input amplifier to consider for the antialiasing filter design.
(4) Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer
function expressed as a number of LSBs or as a percent of the specified linear full-scale range (FSR).
(5) Offset error drift is calculated using the box method, as described by the following equation:
valueMAX - valueMIN
TempRange
TCEO
=
(6) Gain error drift is calculated using the box method, as described by the following equation:
≈ value MAX - value MIN
’
6
∆
∆
÷
÷
TCEG ( ppm) =
ì10
value ìTempRange
«
◊
8
Copyright © 2017–2020, Texas Instruments Incorporated
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
www.ti.com.cn
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
Electrical Characteristics: AMC1306x05 (continued)
minimum and maximum specifications apply from TA = –40°C to +125°C, AVDD = 3.0 V to 5.5 V, DVDD = 2.7 V to 5.5 V,
AINP = –50 mV to 50 mV, AINN = AGND, and sinc3 filter with OSR = 256 (unless otherwise noted); typical specifications are
at TA = 25°C, CLKIN = 20 MHz, AVDD = 5 V, and DVDD = 3.3 V
PARAMETER
DIGITAL INPUTS/OUTPUTS
CMOS Logic With Schmitt-Trigger
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IIN
Input current
DGND ≤ VIN ≤ DVDD
0
7
µA
pF
V
CIN
VIH
Input capacitance
4
High-level input voltage
Low-level input voltage
Output load capacitance
0.7 × DVDD
–0.3
DVDD + 0.3
0.3 × DVDD
VIL
V
CLOAD
30
pF
IOH = –20 µA
IOH = –4 mA
IOL = 20 µA
IOL = 4 mA
DVDD – 0.1
DVDD – 0.4
VOH
High-level output voltage
Low-level output voltage
V
V
0.1
0.4
VOL
POWER SUPPLY
AVDD
High-side supply voltage
3.0
2.7
5.0
6.3
7.2
3.3
5.5
8.5
9.8
5.5
V
mA
V
3.0 V ≤ AVDD ≤ 3.6 V
4.5 V ≤ AVDD ≤ 5.5 V
IAVDD
High-side supply current
DVDD Controller-side supply voltage
AMC1306Ex, 2.7 V ≤ DVDD ≤ 3.6 V,
CLOAD = 15 pF
4.1
3.3
5.0
3.9
5.5
4.8
6.9
6.0
AMC1306Mx, 2.7 V ≤ DVDD ≤ 3.6 V,
CLOAD = 15 pF
IDVDD
Controller-side supply current
mA
AMC1306Ex, 4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 15 pF
AMC1306Mx, 4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 15 pF
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7.10 Electrical Characteristics: AMC1306x25
minimum and maximum specifications apply from TA = –40°C to +125°C, AVDD = 3.0 V to 5.5 V, DVDD = 2.7 V to 5.5 V,
AINP = –250 mV to 250 mV, AINN = AGND, and sinc3 filter with OSR = 256 (unless otherwise noted); typical specifications
are at TA = 25°C, CLKIN = 20 MHz, AVDD = 5 V, and DVDD = 3.3 V
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ANALOG INPUTS
VClipping Differential input voltage before clipping output AINP – AINN
±320
mV
mV
V
FSR
Specified linear differential full-scale
Absolute common-mode input voltage(1)
Operating common-mode input voltage
Common-mode overvoltage detection level(2)
Single-ended input capacitance
Differential input capacitance
Input bias current
AINP – AINN
–250
–2
250
AVDD
(AINP + AINN) / 2 to AGND
(AINP + AINN) / 2 to AGND
(AINP + AINN) / 2 to AGND
AINN = AGND
VCM
VCMov
CIN
–0.16
AVDD – 2.1
V
AVDD – 2
V
2
1
pF
pF
µA
kΩ
kΩ
nA
kV/µs
CIND
IIB
AINP = AINN = AGND, IIB = IIBP + IIBN
AINN = AGND
–82
50
–60
19
–48
RIN
Single-ended input resistance
Differential input resistance
RIND
IIO
22
Input offset current
±5
CMTI
Common-mode transient immunity
100
AINP = AINN, fIN = 0 Hz,
–95
VCM min ≤ VIN ≤ VCM max
CMRR Common-mode rejection ratio
dB
AINP = AINN, fIN from 0.1 Hz to 50 kHz,
–95
900
VCM min ≤ VIN ≤ VCM max
BW
DC ACCURACY
Input bandwidth(3)
kHz
DNL
INL
Differential nonlinearity
Integral nonlinearity(4)
Resolution: 16 bits
–0.99
–4
0.99
4
LSB
LSB
µV
Resolution: 16 bits
±1
±4.5
EO
Offset error
Initial, at 25°C, AINP = AINN = AGND
–100
–1
100
1
TCEO
EG
Offset error thermal drift(5)
Gain error
Gain error thermal drift(6)
±0.15
µV/°C
Initial, at 25°C
–0.2%
–40
±0.005%
±20
0.2%
40
TCEG
ppm/°C
dB
AINP = AINN = AGND,
3.0 V ≤ AVDD ≤ 5.5 V, at dc
–103
PSRR Power-supply rejection ratio
AINP = AINN = AGND,
3.0 V ≤ AVDD ≤ 5.5 V,
10 kHz, 100-mV ripple
–92
AC ACCURACY
SNR
Signal-to-noise ratio
fIN = 1 kHz
fIN = 1 kHz
82
86
dB
dB
SINAD Signal-to-noise + distortion
81.9
85.7
4.5 V ≤ AVDD ≤ 5.5 V,
5 MHz ≤ fCLKIN ≤ 21 MHz, fIN = 1 kHz
–98
–86
–85
THD
Total harmonic distortion
dB
dB
3.0 V ≤ AVDD ≤ 3.6 V,
5 MHz ≤ fCLKIN ≤ 20 MHz, fIN = 1 kHz
–93
100
SFDR
Spurious-free dynamic range
fIN = 1 kHz
83
(1) Steady-state voltage supported by the device in case of a system failure; see the specified common-mode input voltage VCM for normal
operation. Adhere to the analog input voltage range as specified in the Absolute Maximum Ratings table.
(2) The common-mode overvoltage detection level has a typical hysteresis of 90 mV.
(3) This parameter is the –3-dB, second-order, roll-off frequency of the integrated differential input amplifier to consider for antialiasing filter
designs.
(4) Integral nonlinearity is defined as the maximum deviation from a straight line passing through the end-points of the ideal ADC transfer
function expressed as number of LSBs or as a percent of the specified linear full-scale range FSR.
valueMAX - valueMIN
TempRange
TCEO
=
(5) Offset error drift is calculated using the box method, as described by the following equation:
.
≈ value MAX - value MIN
’
6
∆
∆
÷
÷
TCEG ( ppm) =
ì10
value ìTempRange
«
◊
(6) Gain error drift is calculated using the box method, as described by the following equation:
.
10
Copyright © 2017–2020, Texas Instruments Incorporated
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
www.ti.com.cn
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
Electrical Characteristics: AMC1306x25 (continued)
minimum and maximum specifications apply from TA = –40°C to +125°C, AVDD = 3.0 V to 5.5 V, DVDD = 2.7 V to 5.5 V,
AINP = –250 mV to 250 mV, AINN = AGND, and sinc3 filter with OSR = 256 (unless otherwise noted); typical specifications
are at TA = 25°C, CLKIN = 20 MHz, AVDD = 5 V, and DVDD = 3.3 V
PARAMETER
DIGITAL INPUTS/OUTPUTS
CMOS Logic with Schmitt-trigger
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IIN
Input current
DGND ≤ VIN ≤ DVDD
0
7
μA
pF
V
CIN
VIH
Input capacitance
4
High-level input voltage
Low-level input voltage
Output load capacitance
0.7 × DVDD
–0.3
DVDD + 0.3
0.3 × DVDD
VIL
V
CLOAD
fCLKIN = 20 MHz
IOH = –20 µA
IOH = –4 mA
IOL = 20 µA
30
pF
DVDD – 0.1
DVDD – 0.4
VOH
High-level output voltage
Low-level output voltage
V
V
0.1
0.4
VOL
IOL = 4 mA
POWER SUPPLY
AVDD High-side supply voltage
3.0
2.7
5.0
6.3
7.2
3.3
5.5
8.5
9.8
5.5
V
mA
V
3.0 V ≤ AVDD ≤ 3.6 V
4.5 V ≤ AVDD ≤ 5.5 V
IAVDD
High-side supply current
DVDD Controller-side supply voltage
AMC1306Ex, 2.7 V ≤ DVDD ≤ 3.6 V,
CLOAD = 15 pF
4.1
3.3
5.0
3.9
5.5
4.8
6.9
6.0
AMC1306Mx, 2.7 V ≤ DVDD ≤ 3.6 V,
CLOAD = 15 pF
IDVDD
Controller-side supply current
mA
AMC1306Ex, 4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 15 pF
AMC1306Mx, 4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 15 pF
Copyright © 2017–2020, Texas Instruments Incorporated
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ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
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7.11 Switching Characteristics
over operating ambient temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
4.5 V ≤ AVDD ≤ 5.5 V
MIN
5
TYP
MAX
UNIT
21
20
fCLKIN
CLKIN clock frequency
MHz
3.0 V ≤ AVDD ≤ 5.5 V
4.5 V ≤ AVDD ≤ 5.5 V
3.0 V ≤ AVDD ≤ 5.5 V
5
47.6
50
20
20
200
200
120
120
tCLKIN
CLKIN clock period
ns
tHIGH
tLOW
CLKIN clock high time
CLKIN clock low time
25
25
ns
ns
DOUT hold time after rising edge AMC1306Mx(1)
,
tH
tD
3.5
ns
ns
of CLKIN
CLOAD = 15 pF
Rising edge of CLKIN to DOUT
valid delay
AMC1306Mx(1), CLOAD = 15 pF
15
3.5
3.9
3.5
3.9
32
10% to 90%, 2.7 V ≤ DVDD ≤ 3.6 V,
0.8
1.8
0.8
1.8
CLOAD = 15 pF
tr
DOUT rise time
DOUT fall time
ns
ns
10% to 90%, 4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 15 pF
90% to 10%, 2.7 V ≤ DVDD ≤ 3.6 V,
CLOAD = 15 pF
tf
90% to 10%, 4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 15 pF
DVDD at 2.7 V (min) to DOUT valid with
AVDD ≥ 3.0 V
CLKIN
cycles
tISTART Interface startup time
tASTART Analog startup time
32
AVDD step to 3.0 V with DVDD ≥ 2.7 V,
0.1% settling
0.5
ms
(1) The output of the Manchester encoded versions of the AMC1306Ex can change with every edge of CLKIN with a typical delay of 6 ns;
see the Manchester Coding Feature section for additional details.
tCLKIN
tHIGH
CLKIN
tLOW
tH
tD
tr / tf
DOUT
Figure 1. Digital Interface Timing
AVDD
DVDD
tASTART
CLKIN
DOUT
...
Bitream not valid
(analog settling)
Test Pattern
Valid bitstream
tISTART
Figure 2. Device Startup Timing
12
Copyright © 2017–2020, Texas Instruments Incorporated
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
www.ti.com.cn
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
7.12 Insulation Characteristics Curves
500
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
AVDD = DVDD = 3.6 V
AVDD = DVDD = 5.5 V
400
300
200
100
0
0
50
100
TA (°C)
150
200
0
50
100
TA (°C)
150
200
D001
D002
Figure 3. Thermal Derating Curve for Safety-Limiting
Current per VDE
Figure 4. Thermal Derating Curve for Safety-Limiting
Power per VDE
1.E+11
Safety Margin Zone: 1800 VRMS, 254 Years
Operating Zone: 1500 VRMS, 135 Years
TDDB Line (<1 PPM Fail Rate)
1.E+10
87.5%
1.E+9
1.E+8
1.E+7
1.E+6
1.E+5
1.E+4
1.E+3
20%
1.E+2
1.E+1
500 1500 2500 3500 4500 5500 6500 7500 8500 9500
Stress Voltage (VRMS
)
TA up to 150°C, stress-voltage frequency = 60 Hz,
isolation working voltage = 1500 VRMS, operating lifetime = 135 years
Figure 5. Reinforced Isolation Capacitor Lifetime Projection
Copyright © 2017–2020, Texas Instruments Incorporated
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AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
www.ti.com.cn
7.13 Typical Characteristics
at AVDD = 5 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1306x05) or –250 mV to 250 mV (AMC1306x25),
AINN = AGND, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256 (unless otherwise noted)
4
3.5
3
3.3
3.25
3.2
3.15
3.1
2.5
2
3.05
3
1.5
1
2.95
2.9
0.5
3
3.5
4
4.5
AVDD (V)
5
5.5
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (èC)
D003
D004
Figure 6. Maximum Operating Common-Mode Input Voltage
vs High-Side Supply Voltage
Figure 7. Common-Mode Overvoltage Detection Level vs
Temperature
60
40
20
0
0
AMC1306x25
AMC1306x05
-20
-40
-60
-80
-20
-40
-100
-60
AMC1306x25
AMC1306x05
-80
-0.5
-120
0.1
0
0.5
1
1.5
VCM (V)
2
2.5 3 3.5
1
10
fIN (kHz)
100
1000
D005
D006
Figure 8. Input Bias Current vs
Common-Mode Input Voltage
Figure 9. Common-Mode Rejection Ratio vs
Input Signal Frequency
4
100
75
AMC1306x
AMC1306x05, AVDD = 3.3 V
AMC1306x25
AMC1306x05
3.5
3
50
2.5
2
25
0
1.5
1
-25
-50
-75
-100
0.5
0
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
3
3.5
4
4.5
AVDD (V)
5
5.5
D008
D009
Figure 10. Integral Nonlinearity vs Temperature
Figure 11. Offset Error vs High-Side Supply Voltage
14
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AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
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ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
Typical Characteristics (continued)
at AVDD = 5 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1306x05) or –250 mV to 250 mV (AMC1306x25),
AINN = AGND, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256 (unless otherwise noted)
100
100
AMC1306x25
AMC1306x05
80
80
60
60
40
40
20
20
0
0
-20
-40
-60
-80
-100
-20
-40
-60
-80
-100
Device 1
Device 2
Device 3
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
5
9
13
fCLKIN (MHz)
17
21
D010
D011
Figure 12. Offset Error vs Temperature
Figure 13. Offset Error vs Clock Frequency
0.25
0.2
0.3
0.2
0.1
0
0.15
0.1
0.05
0
-0.05
-0.1
-0.15
-0.2
-0.25
-0.1
-0.2
-0.3
3
3.5
4
4.5
AVDD (V)
5
5.5
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (èC)
D012
D013
Figure 14. Gain Error vs High-Side Supply Voltage
Figure 15. Gain Error vs Temperature
0
-20
0.3
0.2
0.1
0
AMC1306x25
AMC1306x05
-40
-60
-80
-0.1
-0.2
-0.3
-100
-120
5
9
13
fCLKIN (MHz)
17
21
0.1 0.2 0.5
1
2
3 45 7 10 2030 50 100 200 5001000
Ripple Frequency (kHz)
D014
D015
Figure 16. Gain Error vs Clock Frequency
Figure 17. Power-Supply Rejection Ratio vs
Ripple Frequency
Copyright © 2017–2020, Texas Instruments Incorporated
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Typical Characteristics (continued)
at AVDD = 5 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1306x05) or –250 mV to 250 mV (AMC1306x25),
AINN = AGND, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256 (unless otherwise noted)
90
89
88
87
86
85
84
83
82
81
80
90
89
88
87
86
85
84
83
82
81
80
AMC1306x25, SNR
AMC1306x25, SINAD
AMC1306x05, SNR
AMC1306x05, SINAD
AMC1306x25, SNR
AMC1306x25, SINAD
AMC1306x05, SNR
AMC1306x05, SINAD
3
3.5
4
4.5
AVDD (V)
5
5.5
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (èC)
D016
D017
Figure 18. Signal-to-Noise Ratio and Signal-to-Noise +
Distortion vs High-Side Supply Voltage
Figure 19. Signal-to-Noise Ratio and Signal-to-Noise +
Distortion vs Temperature
90
88
AMC1306x25, SNR
AMC1306x25, SINAD
AMC1306x05, SNR
AMC1306x05, SINAD
89
88
87
86
85
84
83
82
81
80
86
84
82
80
78
76
74
72
70
AMC1306x25, SNR
AMC1306x25, SINAD
AMC1306x05, SNR
AMC1306x05, SINAD
5
9
13
fCLKIN (MHz)
17
21
0.1
1
10
100
fIN (kHz)
D018
D019
Figure 20. Signal-to-Noise Ratio and Signal-to-Noise +
Distortion vs Clock Frequency
Figure 21. Signal-to-Noise Ratio and Signal-to-Noise +
Distortion vs Input Signal Frequency
100
95
AMC1306x25, SNR
AMC1306x25, SINAD
AMC1306x05, SNR
AMC1306x05, SINAD
95
90
85
80
75
70
65
60
55
50
90
85
80
75
70
65
60
55
50
45
0
50 100 150 200 250 300 350 400 450 500
VIN (mVpp)
0
10
20
30
40
50
VIN (mVpp)
60
70
80
90 100
D020
D042
Figure 22. Signal-to-Noise Ratio and Signal-to-Noise +
Distortion vs Input Signal Amplitude
Figure 23. Signal-to-Noise Ratio and Signal-to-Noise +
Distortion vs Input Signal Amplitude
16
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AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
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ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
Typical Characteristics (continued)
at AVDD = 5 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1306x05) or –250 mV to 250 mV (AMC1306x25),
AINN = AGND, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256 (unless otherwise noted)
-86
-86
-88
-88
-90
-90
-92
-92
-94
-94
-96
-96
-98
-98
-100
-102
-104
-106
-108
-110
-100
-102
-104
-106
-108
-110
4.5
4.75
5
AVDD (V)
5.25
5.5
3
3.5
4
4.5
AVDD (V)
5
5.5
D021
D039
fCLKIN = 21 MHz
fCLKIN = 20 MHz
Figure 24. Total Harmonic Distortion vs
High-Side Supply Voltage (5 V, nom)
Figure 25. Total Harmonic Distortion vs
High-Side Supply Voltage (3.3 V, nom)
-86
-88
-86
-88
-90
-90
-92
-92
-94
-94
-96
-96
-98
-98
-100
-102
-104
-106
-108
-110
-100
-102
-104
-106
-108
-110
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
5
9
13
fCLKIN (MHz)
17
21
D022
D023
Figure 26. Total Harmonic Distortion vs Temperature
Figure 27. Total Harmonic Distortion vs Clock Frequency
-85
-70
-75
-80
-90
-95
-85
-90
-100
-105
-110
-115
-120
-95
-100
-105
-110
-115
-120
0.1
1
fIN (kHz)
10
0
50 100 150 200 250 300 350 400 450 500
VIN (mVpp)
D024
D025
AMC1306x25
Figure 28. Total Harmonic Distortion vs
Input Signal Frequency
Figure 29. Total Harmonic Distortion vs
Input Signal Amplitude
Copyright © 2017–2020, Texas Instruments Incorporated
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www.ti.com.cn
Typical Characteristics (continued)
at AVDD = 5 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1306x05) or –250 mV to 250 mV (AMC1306x25),
AINN = AGND, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256 (unless otherwise noted)
-65
118
114
110
106
102
98
-70
-75
-80
-85
-90
-95
94
-100
-105
-110
-115
90
86
82
0
10
20
30
40
50
VIN (mVpp)
60
70
80
90 100
3
5
0
3.5
4
4.5
AVDD (V)
5
5.5
D043
D026
AMC1306x05
Figure 30. Total Harmonic Distortion vs
Input Signal Amplitude
Figure 31. Spurious-Free Dynamic Range vs
High-Side Supply Voltage
118
114
110
106
102
98
118
114
110
106
102
98
94
94
90
90
86
86
82
82
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (èC)
9
13
fCLKIN (MHz)
17
21
D027
D028
Figure 32. Spurious-Free Dynamic Range vs Temperature
Figure 33. Spurious-Free Dynamic Range vs
Clock Frequency
118
114
110
106
102
98
125
120
115
110
105
100
95
94
90
90
85
86
80
82
75
0.1
1
fIN (kHz)
10
50 100 150 200 250 300 350 400 450 500
VIN (mVpp)
D029
D030
AMC1306x25
Figure 34. Spurious-Free Dynamic Range vs
Input Signal Frequency
Figure 35. Spurious-Free Dynamic Range vs
Input Signal Amplitude
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Typical Characteristics (continued)
at AVDD = 5 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1306x05) or –250 mV to 250 mV (AMC1306x25),
AINN = AGND, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256 (unless otherwise noted)
120
115
110
105
100
95
0
-20
-40
-60
-80
90
-100
-120
-140
-160
85
80
75
70
0
10
20
30
40
50
VIN (mVpp)
60
70
80
90 100
0
5
10
15
Frequency (kHz)
20
25
30
35
40
D046
D044
AMC1306x05
AMC1306x05, 4096-point FFT, VIN = 100 mVPP
Figure 36. Spurious-Free Dynamic Range vs
Input Signal Amplitude
Figure 37. Frequency Spectrum with 1-kHz Input Signal
0
-20
0
-20
-40
-60
-80
-40
-60
-80
-100
-120
-140
-160
-100
-120
-140
-160
0
5
10
15
Frequency (kHz)
20
25
30
35
40
0
5
10
15
Frequency (kHz)
20
25
30
35
40
D045
D031
AMC1306x05, 4096-point FFT, VIN = 100 mVPP
AMC1306x25, 4096-point FFT, VIN = 500 mVPP
Figure 38. Frequency Spectrum with 10-kHz Input Signal
Figure 39. Frequency Spectrum with 1-kHz Input Signal
0
10
9.5
9
-20
-40
-60
-80
8.5
8
7.5
7
6.5
6
-100
-120
-140
-160
5.5
5
4.5
4
0
5
10
15
20
Frequency (kHz)
25
30
35
40
3
3.5
4
4.5
AVDD (V)
5
5.5
D032
D033
AMC1306x25, 4096-point FFT, VIN = 500 mVPP
Figure 40. Frequency Spectrum with 10-kHz Input Signal
Figure 41. High-Side Supply Current vs
High-Side Supply Voltage
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Typical Characteristics (continued)
at AVDD = 5 V, DVDD = 3.3 V, AINP = –50 mV to 50 mV (AMC1306x05) or –250 mV to 250 mV (AMC1306x25),
AINN = AGND, fCLKIN = 20 MHz, and sinc3 filter with OSR = 256 (unless otherwise noted)
10
9.5
9
10
9.5
9
8.5
8
8.5
8
7.5
7
7.5
7
6.5
6
6.5
6
5.5
5
5.5
5
4.5
4
4.5
4
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
5
9
13
Clock Frequency (MHz)
17
21
D034
D035
Figure 42. High-Side Supply Current vs Temperature
Figure 43. High-Side Supply Current vs Clock Frequency
8
7.5
7
8
AMC1306Mx
AMC1306Ex
AMC1306Mx, DVDD = 3.3 V
AMC1306Mx, DVDD = 5 V
AMC1306Ex, DVDD = 3.3 V
AMC1306Ex, DVDD = 5 V
7.5
7
6.5
6
6.5
6
5.5
5
5.5
5
4.5
4
4.5
4
3.5
3
3.5
3
2.5
2.5
2
2
2.7
3.1
3.5
3.9
DVDD (V)
4.3
4.7
5.1
5.5
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (èC)
D036
D037
Figure 44. Controller-Side Supply Current vs
Controller-Side Supply Voltage
Figure 45. Controller-Side Supply Current vs Temperature
8
7.5
7
AMC1306Mx, DVDD = 3.3 V
AMC1306Mx, DVDD = 5 V
AMC1306Ex, DVDD = 3.3 V
AMC1306Ex, DVDD = 5 V
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
5
9
13
fCLKIN (MHz)
17
21
D038
Figure 46. Controller-Side Supply Current vs
Clock Frequency
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8 Detailed Description
8.1 Overview
The differential analog input (comprised of input signals AINP and AINN) of the AMC1306 is a fully-differential
amplifier feeding the switched-capacitor input of a second-order, delta-sigma (ΔΣ) modulator stage that digitizes
the input signal into a 1-bit output stream. The isolated data output DOUT of the converter provides a stream of
digital ones and zeros that is synchronous to the externally-provided clock source at the CLKIN pin with a
frequency in the range of 5 MHz to 21 MHz. The time average of this serial bitstream output is proportional to the
analog input voltage.
The Functional Block Diagram section shows a detailed block diagram of the AMC1306. The analog input range
is tailored to directly accommodate a voltage drop across a shunt resistor used for current sensing. The silicon-
dioxide (SiO2) based capacitive isolation barrier supports a high level of magnetic field immunity as described in
the ISO72x Digital Isolator Magnetic-Field Immunity application report, available for download at www.ti.com. The
external clock input simplifies the synchronization of multiple current-sensing channels on the system level. The
extended frequency range of up to 21 MHz supports higher performance levels compared to the other solutions
available on the market.
8.2 Functional Block Diagram
AVDD
DVDD
Reinforced
Isolation
Barrier
AMC1306x
AINP
AINN
ûꢀ Modulator
DOUT
Band-Gap
Reference
CLKIN
VCM, AVDD
Diagnostic
AGND
DGND
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8.3 Feature Description
8.3.1 Analog Input
The AMC1306 incorporates front-end circuitry that contains a differential amplifier and a sampling stage, followed
by a ΔΣ modulator. The gain of the differential amplifier is set by internal precision resistors to a factor of 4 for
devices with a specified input voltage range of ±250 mV (this value is for the AMC1306x25), or to a factor of 20
in devices with a ±50-mV input voltage range (for the AMC1306x05), resulting in a differential input impedance of
4.9 kΩ (for the AMC1306x05) or 22 kΩ (for the AMC1306x25). For reduced offset and offset drift, the differential
amplifier is chopper-stabilized with the switching frequency set at fCLKIN / 32. The switching frequency generates
a spur as shown in Figure 47.
0
-20
-40
-60
-80
-100
-120
-140
-160
0.1
1
10 100
Frequency (kHz)
1000
10000
D007
sinc3 filter, OSR = 2, fCLKIN = 20 MHz, fIN = 1 kHz
Figure 47. Quantization Noise Shaping
Consider the input impedance of the AMC1306 in designs with high-impedance signal sources that can cause
degradation of gain and offset specifications. The importance of this effect, however, depends on the desired
system performance. Additionally, the input bias current caused by the internal common-mode voltage at the
output of the differential amplifier is dependent on the actual amplitude of the input signal; see the Isolated
Voltage Sensing section for more details on reducing these effects.
There are two restrictions on the analog input signals (AINP and AINN). First, if the input voltage exceeds the
range AGND – 6 V to AVDD + 0.5 V, the input current must be limited to 10 mA because the device input
electrostatic discharge (ESD) diodes turn on. In addition, the linearity and noise performance of the device are
ensured only when the differential analog input voltage remains within the specified linear full-scale range (FSR),
that is ±250 mV (for the AMC1306x25) or ±50 mV (for the AMC1306x05), and within the specified input common-
mode range.
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Feature Description (continued)
8.3.2 Modulator
The modulator implemented in the AMC1306 is a second-order, switched-capacitor, feed-forward ΔΣ modulator,
such as the one conceptualized in Figure 48. The analog input voltage VIN and the output V5 of the 1-bit digital-
to-analog converter (DAC) are differentiated, providing an analog voltage V1 at the input of the first integrator
stage. The output of the first integrator feeds the input of the second integrator stage, resulting in output voltage
V3 that is differentiated with the input signal VIN and the output of the first integrator V2. Depending on the polarity
of the resulting voltage V4, the output of the comparator is changed. In this case, the 1-bit DAC responds on the
next clock pulse by changing the associated analog output voltage V5, causing the integrators to progress in the
opposite direction and forcing the value of the integrator output to track the average value of the input.
fCLKIN
V1
V2
V3
V4
VIN
Integrator 1
Integrator 2
ꢀ
ꢀ
CMP
0 V
V5
DAC
Figure 48. Block Diagram of a Second-Order Modulator
The modulator shifts the quantization noise to high frequencies, as shown in Figure 48. Therefore, use a low-
pass digital filter at the output of the device to increase the overall performance. This filter is also used to convert
from the 1-bit data stream at a high sampling rate into a higher-bit data word at a lower rate (decimation). TI's
microcontroller families TMS320F2807x and TMS320F2837x offer a suitable programmable, hardwired filter
structure termed a sigma-delta filter module (SDFM) optimized for usage with the AMC1306 family. Also,
SD24_B converters on the MSP430F677x microcontrollers offer a path to directly access the integrated sinc-
filters for a simple system-level solution for multichannel, isolated current sensing. An additional option is to use a
suitable application-specific device, such as the AMC1210 (a four-channel digital sinc-filter). Alternatively, a field-
programmable gate array (FPGA) can be used to implement the filter.
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Feature Description (continued)
8.3.3 Isolation Channel Signal Transmission
The AMC1306 device uses an on-off keying (OOK) modulation scheme to transmit the modulator output
bitstream across the capacitive SiO2-based isolation barrier. The transmitter modulates the bitstream at TX IN in
Figure 49 with an internally-generated, 480-MHz carrier across the isolation barrier to represent a digital one and
sends a no signal to represent the digital zero. The receiver demodulates the signal after advanced signal
conditioning and produces the output. The symmetrical design of each isolation channel improves the CMTI
performance and reduces the radiated emissions caused by the high-frequency carrier. The block diagram of an
isolation channel integrated in the AMC1306 is shown in Figure 49.
Transmitter
Receiver
OOK
Modulation
SiO2-Based
Capacitive
Reinforced
Isolation
TX IN
TX Signal
Conditioning
RX Signal
Conditioning
Envelope
Detection
RX OUT
Barrier
Oscillator
Figure 49. Block Diagram of an Isolation Channel
Figure 50 shows the concept of the on-off keying scheme.
TX IN
Carrier Signal Across
the Isolation Barrier
RX OUT
Figure 50. OOK-Based Modulation Scheme
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Feature Description (continued)
8.3.4 Digital Output
A differential input signal of 0 V ideally produces a stream of ones and zeros that are high 50% of the time. A
differential input of 250 mV (for the AMC1306x25) or 50 mV (for the AMC1306x05) produces a stream of ones
and zeros that are high 89.06% of the time. With 16 bits of resolution, that percentage ideally corresponds to the
code 58368. A differential input of –250 mV (–50 mV for the AMC1306x05) produces a stream of ones and zeros
that are high 10.94% of the time and ideally results in code 7168 with 16-bit resolution. These input voltages are
also the specified linear ranges of the different AMC1306 versions with performance as specified in this
document. If the input voltage value exceeds these ranges, the output of the modulator shows nonlinear behavior
when the quantization noise increases. The output of the modulator clips with a stream of only zeros with an
input less than or equal to –320 mV (–64 mV for the AMC1306x05) or with a stream of only ones with an input
greater than or equal to 320 mV (64 mV for the AMC1306x05). In this case, however, the AMC1306 generates a
single 1 (if the input is at negative full-scale) or 0 every 128 clock cycles to indicate proper device function (see
the Fail-Safe Output section for more details). The input voltage versus the output modulator signal is shown in
Figure 51.
Modulator Output
+FS (Analog Input)
-FS (Analog Input)
Analog Input
Figure 51. Analog Input versus the AMC1306 Modulator Output
The density of ones in the output bitstream for any input voltage value (with the exception of a full-scale input
signal, as described in the Output Behavior in Case of a Full-Scale Input section) can be calculated using
Equation 1:
VIN + VClipping
2ì VClipping
(1)
The AMC1306 system clock is provided externally at the CLKIN pin. For more details, see the Switching
Characteristics table and the Manchester Coding Feature section.
8.3.5 Manchester Coding Feature
The AMC1306Ex offers the IEEE 802.3-compliant Manchester coding feature that generates at least one
transition per bit to support clock signal recovery from the bitstream. A Manchester coded bitstream is free of dc
components. The Manchester coding combines the clock and data information using exclusive or (XOR) logical
operation and results in a bitstream as shown in Figure 52. The duty cycle of the Manchester encoded bitstream
depends on the duty cycle of the input clock CLKIN.
Clock
Uncoded
Bitstream
0
1
0
1
0
1
1
1
0
0
1
1
0
0
1
Machester
Coded
Bitstream
Figure 52. Manchester Coded Output of the AMC1306Ex
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8.4 Device Functional Modes
8.4.1 Fail-Safe Output
In the case of a missing high-side supply voltage AVDD, the output of a ΔΣ modulator is not defined and can
cause a system malfunction. In systems with high safety requirements, this behavior is not acceptable.
Therefore, the AMC1306 implements a fail-safe output function that ensures that the output DOUT of the device
offers a steady-state bitstream of logic 0's in case of a missing AVDD, as shown in Figure 53.
Additionally, if the common-mode voltage of the input reaches or exceeds the specified common-mode
overvoltage detection level VCMov as defined in the Electrical Characteristics table, the AMC1306 offers a steady-
state bitstream of logic 1's at the output DOUT, as also shown in Figure 53.
tASTART
tISTART
CLKIN
...
AVDD
AVDD GOOD
Missing AVDD
AVDD GOOD
VCM
VCM < VCMov
VCM ≥ VCMov
VCM < VCMov
DOUT
Valid Bit Stream
1
0
Test Pattern
1
Bit Stream Not Valid Valid Bit Stream
Figure 53. Fail-Safe Output of the AMC1306
8.4.2 Output Behavior in Case of a Full-Scale Input
If a full-scale input signal is applied to the AMC1306 (that is, VIN ≥ VClipping), the device generates a single one or
zero every 128 bits at DOUT, depending on the actual polarity of the signal being sensed, as shown in Figure 54.
In this way, differentiating between a missing AVDD and a full-scale input signal is possible on the system level.
CLKIN
...
...
DOUT
DOUT
VIN ≤ œ320 mV (AMC1306x05: œ64 mV)
...
...
...
...
VIN ≥ 320 mV (AMC1306x05: 64 mV)
127 CLKIN Cycles
127 CLKIN Cycles
Figure 54. Overrange Output of the AMC1306
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
9.1.1 Digital Filter Usage
The modulator generates a bitstream that is processed by a digital filter to obtain a digital word similar to a
conversion result of a conventional analog-to-digital converter (ADC). A very simple filter, built with minimal effort
and hardware, is a sinc3-type filter, as shown in Equation 2:
3
-OSR
≈
’
1- z
H z =
( )
∆
∆
÷
÷
1- z-1
«
◊
(2)
This filter provides the best output performance at the lowest hardware size (count of digital gates) for a second-
order modulator. All the characterization in this document is also done with a sinc3 filter with an oversampling
ratio (OSR) of 256 and an output word width of 16 bits.
The effective number of bits (ENOB) is often used to compare the performance of ADCs and ΔΣ modulators.
Figure 55 shows the ENOB of the AMC1306 with different oversampling ratios. In this document, this number is
calculated from the SINAD by using Equation 3:
SINAD = 1.76 dB + 6.02 dB × ENOB
(3)
16
14
12
10
8
6
4
sinc3
sinc2
sinc1
2
0
1
10
100
1000
OSR
D040
Figure 55. Measured Effective Number of Bits versus Oversampling Ratio
An example code for implementing a sinc3 filter in an FPGA is discussed in the Combining the ADS1202 with an
FPGA Digital Filter for Current Measurement in Motor Control Applications application note, available for
download at www.ti.com.
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9.2 Typical Applications
9.2.1 Frequency Inverter Application
Isolated ΔΣ modulators are being widely used in frequency inverter designs because of their high ac and dc
performance. Frequency inverters are critical parts of industrial motor drives, photovoltaic inverters (string and
central inverters), uninterruptible power supplies (UPS), electrical and hybrid electrical vehicles, and other
industrial applications.
Figure 56 shows a simplified schematics of the AMC1306Mx in a typical frequency inverter application as used in
industrial motor drives with shunt resistors (RSHUNT) used for current sensing. Depending on the system design,
either all three or only two motor phase currents are sensed.
The Manchester coded bitstream output of the AMC1306Ex minimizes the wiring efforts of the connection
between the power board and the control board; see Figure 57. This bitstream output also allows the clock to be
generated locally on the power board without the having to adjust the propagation delay time of each DOUT
connection to fulfill the setup and hold time requirements of the microcontroller.
In both examples, an additional fourth AMC1306 is used to support isolated voltage sensing of the dc link. This
high voltage is reduced using a high-impedance resistive divider and is sensed by the device across a smaller
resistor. The value of this resistor can degrade the performance of the measurement, as described in the Isolated
Voltage Sensing section.
Motor
DC link
RSHUNT
L1
L3
L2
RSHUNT
RSHUNT
AMC1306Mx
3.3 V
AVDD
DVDD
AINP CLKIN
3.3 V
DOUT
DGND
AINN
AGND
TMS320F28x7x
AMC1306Mx
AVDD
3.3 V
DVDD
AINP CLKIN
3.3 V
SD-D1
SD-C1
DOUT
DGND
SD-D2
SD-C2
AINN
AGND
AMC1306Mx
AVDD
SD-D3
SD-C3
3.3 V
DVDD
AINP CLKIN
3.3 V
SD-D4
SD-C4
DOUT
DGND
AINN
AGND
AMC1306Mx
AVDD
CDCLVC1104
PWMx
3.3 V
DVDD
AINP CLKIN
3.3 V
DOUT
DGND
AINN
AGND
Power Board
Control Board
Figure 56. The AMC1306Mx in a Frequency Inverter Application
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Typical Applications (continued)
Motor
DC link
RSHUNT
L1
L3
RSHUNT
RSHUNT
L2
AMC1306Ex
3.3 V
AVDD
AINP
DVDD
CLKIN
3.3 V
AINN DOUT
DGND
AGND
TMS320F28x7x
AMC1306Ex
AVDD
3.3 V
DVDD
AINP CLKIN
3.3 V
DOUT
DGND
AINN
SD-D1
SD-D2
SD-D3
SD-D4
AGND
AMC1306Ex
AVDD
3.3 V
DVDD
AINP CLKIN
3.3 V
DOUT
DGND
AINN
AGND
AMC1306Ex
AVDD
3.3 V
DVDD
AINP CLKIN
3.3 V
DOUT
DGND
AINN
AGND
Clock Source
Power Board
Control Board
Figure 57. The AMC1306Ex in a Frequency Inverter Application
9.2.1.1 Design Requirements
Table 1 lists the parameters for the typical application in the Frequency Inverter Application section.
Table 1. Design Requirements
PARAMETER
High-side supply voltage
VALUE
3.3 V or 5 V
Low-side supply voltage
3.3 V or 5 V
Voltage drop across the shunt for a linear response
±250 mV (maximum)
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9.2.1.2 Detailed Design Procedure
The high-side power supply (AVDD) for the AMC1306 device is derived from the power supply of the upper gate
driver. Further details are provided in the Power Supply Recommendations section.
The floating ground reference (AGND) is derived from one of the ends of the shunt resistor that is connected to
the negative input of the AMC1306 (AINN). If a four-pin shunt is used, the inputs of the device are connected to
the inner leads and AGND is connected to one of the outer shunt leads.
Use Ohm's Law to calculate the voltage drop across the shunt resistor (VSHUNT) for the desired measured
current: VSHUNT = I × RSHUNT
.
Consider the following two restrictions to choose the proper value of the shunt resistor RSHUNT
:
•
•
The voltage drop caused by the nominal current range must not exceed the recommended differential input
voltage range: VSHUNT ≤ ±250 mV
The voltage drop caused by the maximum allowed overcurrent must not exceed the input voltage that causes
a clipping output: |VSHUNT| ≤ |VClipping
|
The typically recommended RC filter in front of a ΔΣ modulator to improve signal-to-noise performance of the
signal path is not required for the AMC1306. By design, the input bandwidth of the analog front-end of the device
is limited as specified in the Electrical Characteristics table.
For modulator output bitstream filtering, a device from TI's TMS320F2807x family of low-cost microcontrollers
(MCUs) or TMS320F2837x family of dual-core MCUs is recommended. These families support up to eight
channels of dedicated hardwired filter structures that significantly simplify system level design by offering two
filtering paths per channel: one providing high accuracy results for the control loop and one fast response path
for overcurrent detection.
9.2.1.3 Application Curve
In motor control applications, a very fast response time for overcurrent detection is required. The time for fully
settling the filter in case of a step-signal at the input of the modulator depends on the filter order; that is, a sinc3
filter requires three data updates for full settling (with fDATA = fCLK / OSR). Therefore, for overcurrent protection,
filter types other than sinc3 can be a better choice; an alternative is the sinc2 filter. Figure 58 compares the
settling times of different filter orders.
The delay time of the sinc filter with a continuous signal is half of the settling time.
16
14
12
10
8
6
4
sinc1
sinc2
sinc3
2
0
0
2
4
6
8
10
12
Settling Time (µs)
14
16
18 20
D041
Figure 58. Measured Effective Number of Bits versus Settling Time
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ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
9.2.2 Isolated Voltage Sensing
The AMC1306 is optimized for usage in current-sensing applications using low-impedance shunts. However, the
device can also be used in isolated voltage-sensing applications if the affect of the (usually higher) impedance of
the resistor used in this case is considered.
High Voltage
Potential
3.3 V
or 5 V
R1
AVDD
R2
R4
R5
AINP
IIB
R3
RIND
ûꢀ Modulator
AINN
R4'
R5'
R3'
AGND
VCM = 1.9 V
AGND
Figure 59. Using the AMC1306 for Isolated Voltage Sensing
9.2.2.1 Design Requirements
Figure 59 shows a simplified circuit typically used in high-voltage-sensing applications. The high impedance
resistors (R1 and R2) are used as voltage dividers and dominate the current value definition. The resistance of
the sensing resistor R3 is chosen to meet the input voltage range of the AMC1306. This resistor and the
differential input impedance of the device (the AMC1306x25 is 22 kΩ, the AMC1306x05 is 4.9 kΩ) also create a
voltage divider that results in an additional gain error. With the assumption of R1, R2, and RIN having a
considerably higher value than R3, the resulting total gain error can be estimated using Equation 4, with EG
being the gain error of the AMC1306.
R3
EGtot = EG
+
RIN
(4)
This gain error can be easily minimized during the initial system-level gain calibration procedure.
9.2.2.2 Detailed Design Procedure
As indicated in Figure 59, the output of the integrated differential amplifier is internally biased to a common-mode
voltage of 1.9 V. This voltage results in a bias current IIB through the resistive network R4 and R5 (or R4' and
R5') used for setting the gain of the amplifier. The value range of this current is specified in the Electrical
Characteristics table. This bias current generates additional offset error that depends on the value of the resistor
R3. The initial system offset calibration does not minimize this effect because the value of the bias current
depends on the actual common-mode amplitude of the input signal (as illustrated in Figure 60). Therefore, in
systems with high accuracy requirements, a series resistor is recommended to be used at the negative input
(AINN) of the AMC1306 with a value equal to the shunt resistor R3 (that is, R3' = R3 in Figure 59) to eliminate
the effect of the bias current.
Copyright © 2017–2020, Texas Instruments Incorporated
31
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
www.ti.com.cn
This additional series resistor (R3') influences the gain error of the circuit. The effect can be calculated using
Equation 5 with R5 = R5' = 50 kΩ and R4 = R4' = 2.5 kΩ (for the AMC1306x05) or 12.5 kΩ (for the
AMC1306x25).
R4
≈
’
EG(%) = 1-
ì100%
∆
÷
◊
R4'+ R3'
«
(5)
9.2.2.3 Application Curve
Figure 60 shows the dependency of the input bias current on the common-mode voltage at the input of the
AMC1306.
60
40
20
0
-20
-40
-60
AMC1306x25
AMC1306x05
-80
-0.5
0
0.5
1
1.5
VCM (V)
2
2.5 3 3.5
D005
Figure 60. Input Bias Current vs Common-Mode Input Voltage
9.2.3 What To Do and What Not To Do
Do not leave the inputs of the AMC1306 unconnected (floating) when the device is powered up. If both modulator
inputs are left floating, the input bias current drives these inputs to the output common-mode of the analog front-
end of approximately 1.9 V. If that voltage is above the specified input common-mode range, the front gain
diminishes and the modulator outputs a bitstream resembling a zero input differential voltage.
32
Copyright © 2017–2020, Texas Instruments Incorporated
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
www.ti.com.cn
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
10 Power Supply Recommendations
In a typical frequency-inverter application, the high-side power supply (AVDD) for the device is directly derived
from the floating power supply of the upper gate driver. For lowest system-level cost, a Zener diode can be used
to limit the voltage to 5 V or 3.3 V (±10%). Alternatively a low-cost low-drop regulator (LDO), for example the
LM317-N, can be used to adjust the supply voltage level and minimize noise on the power-supply node. A low-
ESR decoupling capacitor of 0.1 µF is recommended for filtering this power-supply path. Place this capacitor (C2
in Figure 61) as close as possible to the AVDD pin of the AMC1306 for best performance. If better filtering is
required, an additional 10-µF capacitor can be used.
The floating ground reference (AGND) is derived from the end of the shunt resistor that is connected to the
negative input (AINN) of the device. If a four-pin shunt is used, the device inputs are connected to the inner leads
and AGND is connected to one of the outer leads of the shunt.
For decoupling of the digital power supply on the controller side, a 0.1-µF capacitor is recommended to be
placed as close to the DVDD pin of the AMC1306 as possible, followed by an additional capacitor in the range of
1 µF to 10 µF.
Floating
Power Supply
20 V
HV+
R1
800 ꢀ
AMC1306Mx
Gate Driver
3.0 V,
3.3 V,
or 5.0 V
5.1 V
AVDD
DVDD
C1
10 ꢁF
C4
0.1 ꢁF
C2
0.1 ꢁF
C5
2.2 ꢁF
Z1
1N751A
AGND
AINN
AINP
DGND
DOUT
CLKIN
RSHUNT
To Load
SD-Dx
SD-Cx
PWMx
Gate Driver
TMS320F2837x
HV-
Figure 61. Decoupling the AMC1306
Copyright © 2017–2020, Texas Instruments Incorporated
33
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
www.ti.com.cn
11 Layout
11.1 Layout Guidelines
A layout recommendation showing the critical placement of the decoupling capacitors (as close as possible to the
AMC1306) and placement of the other components required by the device is shown in Figure 62. For best
performance, place the shunt resistor close to the AINP and AINN inputs of the AMC1306 and keep the layout of
both connections symmetrical.
11.2 Layout Example
Clearance area,
to be kept free of any
conductive materials.
0.1 µF
2.2 µF
2.2 µF
0.1 µF
SMD
0603
SMD
0603
SMD
0603
SMD
0603
To Floating
Power
Supply
1
AVDD
AINP
DVDD
CLKIN
DOUT
DGND
16
SMD
RFLT
From Clock
Source
0603
CFLT
AMC1306x
SMD
0603
To Digital
Filter
(MCU)
SMD
RFLT
AINN
AGND
0603
LEGEND
Copper Pour and Traces
High-Side Area
Controller-Side Area
Via to Ground Plane
Via to Supply Plane
Figure 62. Recommended Layout of the AMC1306x
34
版权 © 2017–2020, Texas Instruments Incorporated
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
www.ti.com.cn
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
12 器件和文档支持
12.1 器件支持
12.1.1 器件命名规则
12.1.1.1 隔离相关术语
请参阅《隔离相关术语》
12.2 文档支持
12.2.1 相关文档
请参阅如下相关文档:
•
•
•
•
•
•
•
《适用于二阶 Δ-Σ 调制器的 AMC1210 四路数字滤波器》
《MSP430F677x 多相位仪表计量 SoC》
《TMS320F2807x Piccolo™ 微控制器》
《TMS320F2837xD 双核 Delfino™ 微控制器》
《ISO72x 数字隔离器磁场抗扰度》
《将 ADS1202 与 FPGA 数字滤波器结合,以便在电机控制应用中进行 电流测量》
《CDCLVC11xx 3.3V 和 2.5V LVCMOS 高性能时钟缓冲器系列》
12.3 相关链接
下表列出了快速访问链接。类别包括技术文档、支持和社区资源、工具和软件,以及立即订购快速访问。
表 2. 相关链接
器件
产品文件夹
单击此处
单击此处
单击此处
单击此处
立即订购
单击此处
单击此处
单击此处
单击此处
技术文档
单击此处
单击此处
单击此处
单击此处
工具与软件
单击此处
单击此处
单击此处
单击此处
支持和社区
单击此处
单击此处
单击此处
单击此处
AMC1306E05
AMC1306E25
AMC1306M05
AMC1306M25
12.4 接收文档更新通知
要接收文档更新通知,请导航至 ti.com. 上的器件产品文件夹。单击右上角的通知我进行注册,即可每周接收产品
信息更改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
12.5 社区资源
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.6 商标
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.7 静电放电警告
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可
能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可
能会导致器件与其发布的规格不相符。
版权 © 2017–2020, Texas Instruments Incorporated
35
AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25
ZHCSG26C –MARCH 2017–REVISED JANAURY 2020
www.ti.com.cn
12.8 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更,恕不另行通知,且
不会对此文档进行修订。如需获取此数据表的浏览器版本,请查阅左侧的导航栏。
36
版权 © 2017–2020, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
AMC1306E05DWV
AMC1306E05DWVR
AMC1306E25DWV
AMC1306E25DWVR
AMC1306M05DWV
AMC1306M05DWVR
AMC1306M25DWV
AMC1306M25DWVR
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
SOIC
SOIC
SOIC
SOIC
SOIC
SOIC
SOIC
SOIC
DWV
DWV
DWV
DWV
DWV
DWV
DWV
DWV
8
8
8
8
8
8
8
8
64
RoHS & Green
NIPDAU
Level-3-260C-168 HR
Level-3-260C-168 HR
Level-3-260C-168 HR
Level-3-260C-168 HR
Level-3-260C-168 HR
Level-3-260C-168 HR
Level-3-260C-168 HR
Level-3-260C-168 HR
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
1306E05
1000 RoHS & Green
64 RoHS & Green
1000 RoHS & Green
64 RoHS & Green
1000 RoHS & Green
64 RoHS & Green
1000 RoHS & Green
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
1306E05
1306E25
1306E25
1306M05
1306M05
1306M25
1306M25
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
AMC1306E05DWVR
AMC1306E25DWVR
AMC1306M05DWVR
AMC1306M25DWVR
SOIC
SOIC
SOIC
SOIC
DWV
DWV
DWV
DWV
8
8
8
8
1000
1000
1000
1000
330.0
330.0
330.0
330.0
16.4
16.4
16.4
16.4
12.05 6.15
12.05 6.15
12.05 6.15
12.05 6.15
3.3
3.3
3.3
3.3
16.0
16.0
16.0
16.0
16.0
16.0
16.0
16.0
Q1
Q1
Q1
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
AMC1306E05DWVR
AMC1306E25DWVR
AMC1306M05DWVR
AMC1306M25DWVR
SOIC
SOIC
SOIC
SOIC
DWV
DWV
DWV
DWV
8
8
8
8
1000
1000
1000
1000
350.0
350.0
350.0
350.0
350.0
350.0
350.0
350.0
43.0
43.0
43.0
43.0
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
TUBE
*All dimensions are nominal
Device
Package Name Package Type
Pins
SPQ
L (mm)
W (mm)
T (µm)
B (mm)
AMC1306E05DWV
AMC1306E25DWV
AMC1306M05DWV
AMC1306M25DWV
DWV
DWV
DWV
DWV
SOIC
SOIC
SOIC
SOIC
8
8
8
8
64
64
64
64
505.46
505.46
505.46
505.46
13.94
13.94
13.94
13.94
4826
4826
4826
4826
6.6
6.6
6.6
6.6
Pack Materials-Page 3
PACKAGE OUTLINE
DWV0008A
SOIC - 2.8 mm max height
S
C
A
L
E
2
.
0
0
0
SOIC
C
SEATING PLANE
11.5 0.25
TYP
PIN 1 ID
AREA
0.1 C
6X 1.27
8
1
2X
5.95
5.75
NOTE 3
3.81
4
5
0.51
0.31
8X
7.6
7.4
0.25
C A
B
A
B
2.8 MAX
NOTE 4
0.33
0.13
TYP
SEE DETAIL A
(2.286)
0.25
GAGE PLANE
0.46
0.36
0 -8
1.0
0.5
DETAIL A
TYPICAL
(2)
4218796/A 09/2013
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm, per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm, per side.
www.ti.com
EXAMPLE BOARD LAYOUT
DWV0008A
SOIC - 2.8 mm max height
SOIC
8X (1.8)
SEE DETAILS
SYMM
SYMM
8X (0.6)
6X (1.27)
(10.9)
LAND PATTERN EXAMPLE
9.1 mm NOMINAL CLEARANCE/CREEPAGE
SCALE:6X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL
METAL
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4218796/A 09/2013
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
DWV0008A
SOIC - 2.8 mm max height
SOIC
SYMM
8X (1.8)
8X (0.6)
SYMM
6X (1.27)
(10.9)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:6X
4218796/A 09/2013
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
www.ti.com
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