CC2640R2L [TI]
SimpleLink™ 低功耗 Bluetooth® 5.1 无线 MCU;型号: | CC2640R2L |
厂家: | TEXAS INSTRUMENTS |
描述: | SimpleLink™ 低功耗 Bluetooth® 5.1 无线 MCU 无线 |
文件: | 总54页 (文件大小:3467K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CC2640R2L
ZHCSRK4A –APRIL 2020 –REVISED SEPTEMBER 2020
CC2640R2L SimpleLink™ 低功耗Bluetooth® 5.1 无线MCU
• 低功耗
– 宽电源电压范围
1 特性
• 微控制器
• 正常运行:1.8 至3.8 V
• 外部稳压器模式:1.7 至1.95 V
– 有源模式RX:5.9 mA
– 有源模式TX(在0dBm 条件下):6.1 mA
– 有源模式TX(在+5dBm 条件下):9.1 mA
– 有源模式MCU:61µA/MHz
– 功能强大的Arm® Cortex®-M3
– EEMBC CoreMark® 评分:142
– 高达48MHz 的时钟速度
– 275KB 非易失性存储器,包括128KB 系统内可
编程闪存
– 高达28KB 系统SRAM,其中20KB 为超低泄漏
SRAM
– 8KB SRAM 作为缓存或系统RAM 用途
– 2 引脚cJTAG 和JTAG 调试
– 支持无线升级(OTA)
– 有源模式MCU:48.5CoreMark/mA
– 待机:1.5μA(RTC 运行,RAM/CPU 保持)
– 关断:100nA(发生外部事件时唤醒)
• 射频(RF) 部分
– 与低功耗蓝牙5.1 和早期LE 规范兼容的
2.4GHz 射频收发器
– 出色的接收器灵敏度(对于BLE 为–
97dBm)、可选择性和阻断性能
– BLE 链路预算为102dB
• 高效代码大小架构,在ROM 中装载驱动程序、TI-
RTOS 和蓝牙®软件,让更多闪存供应用使用
• 符合RoHS 标准的封装
– 5mm × 5mm RHB VQFN32(15 个GPIO)
– 7mm × 7mm RGZ VQFN48(31 个GPIO)
• 外设
– 高达+5dBm 的可编程输出功率
– 单端或差分RF 接口
– 所有数字外设引脚均可连接任意GPIO
– 四个通用计时器模块(8 个16 位计时器或4 个
32 位计时器,均采用PWM)
– 12 位ADC、200ksps、8 通道模拟多路复用器
– UART、I2C 和I2S
– 2 个同步串行接口(SSI)(SPI、MICROWIRE
和TI)
– 实时时钟(RTC)
– 适用于符合各项全球射频规范的系统
• ETSI EN 300 328(欧洲)
• EN 300 440 2 类(欧洲)
• FCC CFR47 第15 部分(美国)
• ARIB STD-T66(日本)
• 开发工具和软件
– 全功能开发套件
– 多个参考设计
– SmartRF™ Studio
– AES-128 安全模块
– IAR Embedded Workbench® for Arm®
– Code Composer Studio™ 集成式开发环境(IDE)
– Code Composer Studio™ Cloud IDE
– 真随机数发生器(TRNG)
– 集成温度传感器
• 外部系统
– 片上内部直流/直流转换器
– 与CC2590 和CC2592 范围扩展器无缝集成
– 极少的外部组件
– 与采用5mm × 5mm 和7mm x 7mm VQFN 封
装的SimpleLink™ CC2640、CC2640R2F 和
CC2650 器件引脚兼容
– 与采用7mm x 7mm VQFN 封装的SimpleLink
™ CC2642R 和CC2652R 器件引脚兼容
– 与采用5mm × 5mm VQFN 封装的SimpleLink
™ CC1350 器件引脚兼容
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SWRS250
CC2640R2L
ZHCSRK4A –APRIL 2020 –REVISED SEPTEMBER 2020
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• 健康和医疗
– 电子温度计
– SpO2
2 应用
• 家庭和楼宇自动化
– 联网电器
– 照明
– 智能锁
– 网关
– 安防系统
• 工业
– 血糖监测仪和血压监测仪
– 称重秤
– 助听器
• 运动和健身设备
– 可穿戴健身和活动监测仪
– 智能追踪器
– 患者监护仪
– 健身器
– 工厂自动化
– 资产跟踪和管理
– HMI
• HID
– 门禁
• 电子销售终端(EPOS)
– 游戏
– 指针设备(无线键盘和鼠标)
– 电子货架标签(ESL)
3 说明
CC2640R2L 器件是一款 2.4GHz 无线微控制器 (MCU),支持低功耗 Bluetooth® 5.1 和专有 2.4GHz 应用。该器
件针对医疗、资产跟踪、个人电子产品、零售自动化和楼宇自动化市场以及需要工业性能的应用中的低功耗无线
通信和高级传感进行了优化。该器件的突出特性包括:
• 支持Bluetooth ® 5.1 特性:LE 编码PHY(远距离)、LE 2Mb PHY(高速)、广播扩展、多个广播集以及对
Bluetooth ® 5.0 和早期低功耗规范的向后兼容性和支持。
• SimpleLink™ CC2640R2 软件开发套件(SDK) 附带的完全合格的Bluetooth ® 5.1 软件协议栈,用于在强大的
Arm® Cortex®-M3 处理器上开发应用。
• 基于闪存的架构,具有加密加速器并提供片上和片外OAD。
• 软件控制的专用无线电控制器(Arm® Cortex®-M0) 提供灵活的低功耗射频收发器功能,支持多个物理层和射频
标准。
• 出色的无线电敏感度和稳健性(选择性与阻断)性能,适用于低功耗Bluetooth ®(1Mbps PHY 时为
-97dBm)。
CC2640R2L 器件是 SimpleLink™ 微控制器 (MCU) 平台的一部分,该平台包括 Wi-Fi®、低功耗蓝牙、Thread、
ZigBee®、Sub-1GHz MCU 和主机MCU,它们共用一个通用、易于使用的开发环境,其中包含单核软件开发套件
(SDK) 和丰富的工具集。借助一次性集成的 SimpleLink™ 平台,可以将产品组合中的任何器件组合添加至您的设
计中,从而在设计要求变更时实现100% 的代码重用。如需更多信息,请访问SimpleLink™ MCU 平台。
器件信息(1)
封装尺寸(标称值)
器件型号
封装
CC2640R2LRGZ
CC2640R2LRHB
VQFN (48)
VQFN (32)
7.00mm × 7.00mm
5.00mm × 5.00mm
(1) 详细信息请参见节12。
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4 Functional Block Diagram
图4-1 shows a block diagram for the CC2640R2L device.
SimpleLink CC2640R2L Wireless MCU
cJTAG
RF Core
Main CPU
ROM
ADC
ADC
ARM
Cortex-M3
128-KB
Flash
Digital PLL
DSP modem
4-KB
8-KB
cache
Up to 48 MHz
61 µA/MHz
ARM
Cortex-M0
SRAM
20-KB
SRAM
ROM
General Peripherals / Modules
4× 32-bit Timers
I2C
UART
I2S
2× SSI (SPI, µW, TI)
Watchdog Timer
TRNG
15 / 31 GPIOs
AES
32-channel µDMA
12-bit ADC, 200 ksps
Time-to-Digital Converter
Temperature and Battery Monitor
RTC
2-KB AUX RAM
DC-DC Converter
图4-1. Block Diagram
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Table of Contents
8.22 DC Characteristics..................................................23
8.23 Thermal Resistance Characteristics....................... 24
8.24 Timing Requirements..............................................24
8.25 Switching Characteristics........................................24
8.26 Typical Characteristics............................................25
9 Detailed Description......................................................29
9.1 Overview...................................................................29
9.2 Functional Block Diagram.........................................29
9.3 Main CPU..................................................................30
9.4 RF Core.................................................................... 30
9.5 Memory.....................................................................30
9.6 Debug....................................................................... 31
9.7 Power Management..................................................31
9.8 Clock Systems.......................................................... 32
9.9 General Peripherals and Modules............................ 32
9.10 Voltage Supply Domains.........................................33
9.11 System Architecture................................................33
10 Application, Implementation, and Layout................. 34
10.1 Application Information........................................... 34
10.2 5 × 5 External Differential (5XD) Application
Circuit.......................................................................... 36
11 Device and Documentation Support..........................38
11.1 Device Nomenclature..............................................38
11.2 Tools and Software..................................................39
11.3 Documentation Support.......................................... 39
11.4 支持资源..................................................................39
11.5 Texas Instruments Low-Power RF Website............ 40
11.6 Low-Power RF eNewsletter.................................... 40
11.7 Trademarks............................................................. 40
11.8 静电放电警告...........................................................40
11.9 Export Control Notice..............................................40
11.10 术语表................................................................... 40
12 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 2
3 说明................................................................................... 2
4 Functional Block Diagram.............................................. 3
5 Revision History.............................................................. 4
6 Device Comparison.........................................................5
6.1 Related Products........................................................ 5
7 Terminal Configuration and Functions..........................6
7.1 Pin Diagram –RGZ Package....................................6
7.2 Signal Descriptions –RGZ Package.........................7
7.3 Pin Diagram –RHB Package....................................9
7.4 Signal Descriptions –RHB Package.......................10
8 Specifications................................................................ 11
8.1 Absolute Maximum Ratings...................................... 11
8.2 ESD Ratings..............................................................11
8.3 Recommended Operating Conditions.......................11
8.4 Power Consumption Summary................................. 12
8.5 General Characteristics............................................ 13
8.6 125-kbps Coded (Bluetooth 5) –RX....................... 13
8.7 125-kbps Coded (Bluetooth 5) –TX........................14
8.8 500-kbps Coded (Bluetooth 5) –RX....................... 14
8.9 500-kbps Coded (Bluetooth 5) –TX........................15
8.10 1-Mbps GFSK (Bluetooth low energy) –RX..........16
8.11 1-Mbps GFSK (Bluetooth low energy) –TX.......... 17
8.12 2-Mbps GFSK (Bluetooth 5) –RX.........................17
8.13 2-Mbps GFSK (Bluetooth 5) –TX......................... 18
8.14 24-MHz Crystal Oscillator (XOSC_HF)...................18
8.15 32.768-kHz Crystal Oscillator (XOSC_LF)..............18
8.16 48-MHz RC Oscillator (RCOSC_HF)......................19
8.17 32-kHz RC Oscillator (RCOSC_LF)........................19
8.18 ADC Characteristics................................................19
8.19 Temperature Sensor............................................... 20
8.20 Battery Monitor........................................................20
8.21 Synchronous Serial Interface (SSI).........................21
Information.................................................................... 41
5 Revision History
Changes from May 22, 2020 to September 22, 2020 (from Revision * (June 2020) to Revision A
(September 2020))
Page
• 更新了整个文档中的表格、图和交叉参考的编号格式.........................................................................................1
• 更新了节3 ........................................................................................................................................................ 2
• Changed 图8-20 in 节8.26 .............................................................................................................................25
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6 Device Comparison
表6-1. Device Family Overview
Device
PHY Support
Flash (KB)
RAM (KB)
GPIO
Package(1)
Bluetooth low energy
(Normal, High Speed, Long Range)
CC2640R2Lxxx(2)
CC2640R2Fxxx(2)
128
20
31, 15
RGZ, RHB
Bluetooth low energy
(Normal, High Speed, Long Range)
128
20
31, 15, 14, 10
RGZ, RHB, YFV, RSM
CC2640F128xxx
CC2650F128xxx
CC2630F128xxx
CC2620F128xxx
Bluetooth low energy (Normal)
Multi-Protocol(3)
128
128
128
128
20
20
20
20
31, 15, 10
31, 15, 10
31, 15, 10
31, 10
RGZ, RHB, RSM
RGZ, RHB, RSM
RGZ, RHB, RSM
RGZ, RSM
IEEE 802.15.4 (ZigBee/6LoWPAN)
IEEE 802.15.4 (RF4CE)
(1) The package designator replaces the xxx in device name to form a complete device name, RGZ is 7-mm × 7-mm VQFN48, RHB is 5-
mm × 5-mm VQFN32, RSM is 4-mm × 4-mm VQFN32, and YFV is 2.7-mm × 2.7-mm DSBGA.
(2) CC2640R2L devices contain Bluetooth Low Energy Host and Controller libraries in ROM, leaving more of the 128KB Flash memory
available for the customer application when used with supported BLE-Stack software protocol stack releases. Actual use of ROM and
Flash memory by the protocol stack may vary depending on device software configuration. See www.ti.com for more details.
(3) The CC2650 device supports all PHYs and can be reflashed to run all the supported standards.
6.1 Related Products
TI's Wireless Connectivity The wireless connectivity portfolio offers a wide selection of low-power RF solutions
suitable for a broad range of applications. The offerings range from fully
customized solutions to turn key offerings with pre-certified hardware and software
(protocol).
TI's SimpleLink™ Sub-1
GHz Wireless MCUs
Long-range, low-power wireless connectivity solutions are offered in a wide range
of
Sub-1 GHz ISM bands.
Companion Products
Review products that are frequently purchased or used in conjunction with this
product.
SimpleLink™ CC2640R2 The CC2640R2 LaunchPad™ development kit brings easy Bluetooth® low energy
Wireless MCU LaunchPad (BLE) connection to the LaunchPad ecosystem with the SimpleLink ultra-low power
™ Development Kit
CC26xx family of devices. Compared to the CC2650 LaunchPad, the CC2640R2
LaunchPad provides the following:
• More free flash memory for the user application in the CC2640R2 wireless MCU
• Out-of-the-box support for Bluetooth 4.2 specification
• 4× faster Over-the-Air download speed compared to Bluetooth 4.1
SimpleLink™ Bluetooth
The new SensorTag IoT kit invites you to realize your cloud-connected product
low energy/Multi-standard idea. The new SensorTag now includes 10 low-power MEMS sensors in a tiny red
SensorTag
package. And it is expandable with DevPacks to make it easy to add your own
sensors or actuators.
Reference Designs
Find reference designs leveraging the best in TI technology to solve your system-
level challenges
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7 Terminal Configuration and Functions
7.1 Pin Diagram –RGZ Package
DIO_24 37
DIO_25 38
DIO_26 39
DIO_27 40
DIO_28 41
DIO_29 42
DIO_30 43
VDDS 44
24 JTAG_TMSC
23 DCOUPL
22 VDDS3
21 DIO_15
20 DIO_14
19 DIO_13
18 DIO_12
17 DIO_11
16 DIO_10
15 DIO_9
VDDR 45
X24M_N 46
X24M_P 47
VDDR_RF 48
14 DIO_8
13 VDDS2
图7-1. RGZ Package 48-Pin VQFN (7-mm × 7-mm) Pinout, 0.5-mm Pitch
I/O pins marked in 图7-1 in bold have high-drive capabilities; they are the following:
• Pin 10, DIO_5
• Pin 11, DIO_6
• Pin 12, DIO_7
• Pin 24, JTAG_TMSC
• Pin 26, DIO_16
• Pin 27, DIO_17
I/O pins marked in 图7-1 in italics have analog capabilities; they are the following:
• Pin 36, DIO_23
• Pin 37, DIO_24
• Pin 38, DIO_25
• Pin 39, DIO_26
• Pin 40, DIO_27
• Pin 41, DIO_28
• Pin 42, DIO_29
• Pin 43, DIO_30
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7.2 Signal Descriptions –RGZ Package
表7-1. Signal Descriptions –RGZ Package
NAME
NO.
33
23
5
TYPE
DESCRIPTION
DCDC_SW
DCOUPL
DIO_0
Power
Output from internal DC/DC(1)
Power
1.27-V regulated digital-supply decoupling capacitor(2)
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
GPIO
DIO_1
6
GPIO
DIO_2
7
GPIO
DIO_3
8
GPIO
DIO_4
9
GPIO
DIO_5
10
11
12
14
15
16
17
18
19
20
21
26
27
28
29
30
31
32
36
37
38
39
40
41
42
43
24
25
35
GPIO, high-drive capability
DIO_6
GPIO, high-drive capability
DIO_7
GPIO, high-drive capability
DIO_8
GPIO
DIO_9
GPIO
DIO_10
DIO_11
DIO_12
DIO_13
DIO_14
DIO_15
DIO_16
DIO_17
DIO_18
DIO_19
DIO_20
DIO_21
DIO_22
DIO_23
DIO_24
DIO_25
DIO_26
DIO_27
DIO_28
DIO_29
DIO_30
JTAG_TMSC
JTAG_TCKC
RESET_N
GPIO
GPIO
GPIO
GPIO
GPIO
GPIO
GPIO, JTAG_TDO, high-drive capability
GPIO, JTAG_TDI, high-drive capability
GPIO
GPIO
GPIO
GPIO
GPIO
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
Digital I/O
Digital I/O
Digital input
JTAG TMSC, high-drive capability
JTAG TCKC(3)
Reset, active-low. No internal pullup.
Positive RF input signal to LNA during RX
Positive RF output signal to PA during TX
RF_P
RF_N
1
2
RF I/O
RF I/O
Negative RF input signal to LNA during RX
Negative RF output signal to PA during TX
VDDR
45
48
Power
Power
1.7-V to 1.95-V supply, typically connect to output of internal DC/DC(2) (4)
1.7-V to 1.95-V supply, typically connect to output of internal DC/DC(2) (5)
VDDR_RF
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表7-1. Signal Descriptions –RGZ Package (continued)
NAME
NO.
44
13
22
34
3
TYPE
DESCRIPTION
VDDS
Power
1.8-V to 3.8-V main chip supply(1)
1.8-V to 3.8-V DIO supply(1)
1.8-V to 3.8-V DIO supply(1)
1.8-V to 3.8-V DC/DC supply
32-kHz crystal oscillator pin 1
32-kHz crystal oscillator pin 2
24-MHz crystal oscillator pin 1
24-MHz crystal oscillator pin 2
Ground –Exposed Ground Pad
VDDS2
Power
VDDS3
Power
VDDS_DCDC
X32K_Q1
X32K_Q2
X24M_N
X24M_P
EGP
Power
Analog I/O
Analog I/O
Analog I/O
Analog I/O
Power
4
46
47
(1) For more details, see the technical reference manual (listed in 节11.3).
(2) Do not supply external circuitry from this pin.
(3) For design consideration regarding noise immunity for this pin, see the JTAG Interface chapter in the CC13x0, CC26x0 SimpleLink™
Wireless MCU Technical Reference Manual
(4) If internal DC/DC is not used, this pin is supplied internally from the main LDO.
(5) If internal DC/DC is not used, this pin must be connected to VDDR for supply from the main LDO.
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7.3 Pin Diagram –RHB Package
DIO_12 25
16 DIO_6
DIO_13 26
DIO_14 27
VDDS 28
15 DIO_5
14 JTAG_TCKC
13 JTAG_TMSC
12 DCOUPL
11 VDDS2
VDDR 29
X24M_N 30
X24M_P 31
VDDR_RF 32
10 DIO_4
9
DIO_3
图7-2. RHB Package 32-Pin VQFN (5-mm × 5-mm) Pinout, 0.5-mm Pitch
I/O pins marked in 图7-2 in bold have high-drive capabilities; they are the following:
• Pin 8, DIO_2
• Pin 9, DIO_3
• Pin 10, DIO_4
• Pin 13, JTAG_TMSC
• Pin 15, DIO_5
• Pin 16, DIO_6
I/O pins marked in 图7-2 in italics have analog capabilities; they are the following:
• Pin 20, DIO_7
• Pin 21, DIO_8
• Pin 22, DIO_9
• Pin 23, DIO_10
• Pin 24, DIO_11
• Pin 25, DIO_12
• Pin 26, DIO_13
• Pin 27, DIO_14
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7.4 Signal Descriptions –RHB Package
表7-2. Signal Descriptions –RHB Package
NAME
NO.
17
12
6
TYPE
DESCRIPTION
DCDC_SW
DCOUPL
DIO_0
Power
Output from internal DC/DC(1)
1.27-V regulated digital-supply decoupling(2)
GPIO
Power
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
Digital I/O
DIO_1
7
GPIO
DIO_2
8
GPIO, high-drive capability
GPIO, high-drive capability
GPIO, high-drive capability
GPIO, High drive capability, JTAG_TDO
GPIO, High drive capability, JTAG_TDI
DIO_3
9
DIO_4
10
15
16
20
21
22
23
24
25
26
27
13
14
19
DIO_5
DIO_6
DIO_7
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
Digital/Analog I/O GPIO, Analog
DIO_8
DIO_9
DIO_10
DIO_11
DIO_12
DIO_13
DIO_14
JTAG_TMSC
JTAG_TCKC
RESET_N
Digital I/O
Digital I/O
Digital input
JTAG TMSC, high-drive capability
JTAG TCKC(3)
Reset, active-low. No internal pullup.
Negative RF input signal to LNA during RX,
Negative RF output signal to PA during TX
RF_N
RF_P
2
1
RF I/O
RF I/O
Positive RF input signal to LNA during RX,
Positive RF output signal to PA during TX
RX_TX
3
RF I/O
Power
Optional bias pin for the RF LNA
VDDR
29
32
28
11
18
4
1.7-V to 1.95-V supply, typically connect to output of internal DC/DC(4) (2)
1.7-V to 1.95-V supply, typically connect to output of internal DC/DC(2) (5)
1.8-V to 3.8-V main chip supply(1)
VDDR_RF
VDDS
Power
Power
VDDS2
Power
1.8-V to 3.8-V GPIO supply(1)
VDDS_DCDC
X32K_Q1
X32K_Q2
X24M_N
X24M_P
EGP
Power
1.8-V to 3.8-V DC/DC supply
Analog I/O
Analog I/O
Analog I/O
Analog I/O
Power
32-kHz crystal oscillator pin 1
5
32-kHz crystal oscillator pin 2
30
31
24-MHz crystal oscillator pin 1
24-MHz crystal oscillator pin 2
Ground –exposed ground pad
(1) See technical reference manual (listed in 节11.3) for more details.
(2) Do not supply external circuitry from this pin.
(3) For design consideration regarding noise immunity for this pin, see the JTAG Interface chapter in the CC13x0, CC26x0 SimpleLink™
Wireless MCU Technical Reference Manual
(4) If internal DC/DC is not used, this pin is supplied internally from the main LDO.
(5) If internal DC/DC is not used, this pin must be connected to VDDR for supply from the main LDO.
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8 Specifications
8.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1) (2)
MIN
MAX UNIT
VDDR supplied by internal DC/DC regulator or
internal GLDO. VDDS_DCDC connected to VDDS
on PCB
Supply voltage (VDDS, VDDS2,
and VDDS3)
4.1
V
V
–0.3
Supply voltage (VDDS(3) and
VDDR)
External regulator mode (VDDS and VDDR pins
connected on PCB)
2.25
–0.3
Voltage on any digital pin(4) (5)
VDDSx + 0.3, max 4.1
V
V
–0.3
–0.3
–0.3
–0.3
–0.3
Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X24M_N and X24M_P
Voltage scaling enabled
VDDR + 0.3, max 2.25
VDDS
1.49
Voltage on ADC input (Vin)
Voltage scaling disabled, internal reference
Voltage scaling disabled, VDDS as reference
V
VDDS / 2.9
5
Input RF level
Tstg
dBm
°C
Storage temperature
150
–40
(1) All voltage values are with respect to ground, unless otherwise noted.
(2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(3) In external regulator mode, VDDS2 and VDDS3 must be at the same potential as VDDS.
(4) Including analog-capable DIO.
(5) Each pin is referenced to a specific VDDSx (VDDS, VDDS2 or VDDS3). For a pin-to-VDDS mapping table, see 表9-2.
8.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/
JEDEC JS001(1)
All pins
±2500
Electrostatic discharge
VESD
V
(RHB and RGZ packages)
RF pins
±500
±500
Charged device model (CDM), per JESD22-
C101(2)
Non-RF pins
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
8.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX UNIT
Ambient temperature
85
°C
–40
Operating supply
voltage (VDDS and
VDDR), external
regulator mode
For operation in 1.8-V systems
(VDDS and VDDR pins connected on PCB, internal DC/DC cannot be used)
1.7
1.95
V
Operating supply
voltage VDDS
1.8
1.8
3.8
3.8
V
V
Operating supply
voltages VDDS2 and
VDDS3
For operation in battery-powered and 3.3-V systems
(internal DC/DC can be used to minimize power consumption)
VDDS < 2.7 V
Operating supply
voltages VDDS2 and
VDDS3
1.9
3.8
V
VDDS ≥2.7 V
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8.4 Power Consumption Summary
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V with internal DC/DC converter, unless
otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
100
150
1.5
MAX
UNIT
Reset. RESET_N pin asserted or VDDS below
Power-on-Reset threshold
nA
Shutdown. No clocks running, no retention
Standby. With RTC, CPU, RAM and (partial)
register retention. RCOSC_LF
Standby. With RTC, CPU, RAM and (partial)
register retention. XOSC_LF
1.7
6
Standby. With Cache, RTC, CPU, RAM and
(partial) register retention. RCOSC_LF
µA
Standby. With Cache, RTC, CPU, RAM and
(partial) register retention. XOSC_LF
Icore
Core current consumption
6.2
Idle. Supply Systems and RAM powered.
Active. Core running CoreMark
650
1.45 mA +
31 µA/MHz
Radio RX (1)
5.9
6.1
6.1
7.0
9.1
Radio RX(2)
Radio TX, 0-dBm output power(1)
Radio TX, 0-dBm output power(2)
Radio TX, 5-dBm output power(2)
mA
Peripheral Current Consumption (Adds to core current Icore for each peripheral unit activated) (3)
Peripheral power domain
Serial power domain
Delta current with domain enabled
Delta current with domain enabled
50
13
µA
µA
Delta current with power domain enabled, clock
enabled, RF core idle
RF Core
237
µA
µDMA
Timers
I2C
Delta current with clock enabled, module idle
Delta current with clock enabled, module idle
Delta current with clock enabled, module idle
Delta current with clock enabled, module idle
Delta current with clock enabled, module idle
Delta current with clock enabled, module idle
165
113
12
µA
µA
µA
µA
µA
µA
Iperi
I2S
36
SSI
93
UART
164
(1) Single-ended RF mode is optimized for size and power consumption. Measured on CC2650EM-4XS.
(2) Differential RF mode is optimized for RF performance. Measured on CC2650EM-5XD.
(3) Iperi is not supported in Standby or Shutdown.
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8.5 General Characteristics
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
FLASH MEMORY
Supported flash erase cycles before
failure(1)
100
k Cycles
Maximum number of write operations
per row before erase(2)
write
operations
83
Years at
105°C
Flash retention
105°C
11.4
Flash page/sector erase current
Flash page/sector size
Flash write current
Average delta current
12.6
4
mA
KB
mA
ms
µs
Average delta current, 4 bytes at a time
4 bytes at a time
8.15
8
Flash page/sector erase time(3)
Flash write time(3)
8
(1) Aborting flash during erase or program modes is not a safe operation.
(2) Each row is 2048 bits (or 256 Bytes) wide.
(3) This number is dependent on Flash aging and will increase over time and erase cycles.
8.6 125-kbps Coded (Bluetooth 5) –RX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
Receiver sensitivity
dBm
–103
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
Receiver saturation
>5
dBm
310 kHz
260 ppm
140 ppm
dB
Difference between the incoming carrier frequency
and the internally generated carrier frequency
Frequency error tolerance
Data rate error tolerance
Data rate error tolerance
Co-channel rejection (1)
Selectivity, ±1 MHz (1)
–260
–260
–140
Difference between incoming data rate and the
internally generated data rate (37-byte packets)
Difference between incoming data rate and the
internally generated data rate (255-byte packets)
Wanted signal at –79 dBm, modulated interferer in
–3
9 / 5(2)
channel, BER = 10–3
Wanted signal at –79 dBm, modulated interferer at
dB
±1 MHz, BER = 10–3
Wanted signal at –79 dBm, modulated interferer at
±2 MHz, Image frequency is at –2 MHz, BER = 10–3
Selectivity, ±2 MHz (1)
Selectivity, ±3 MHz (1)
Selectivity, ±4 MHz (1)
Selectivity, ±6 MHz (1)
43 / 32(2)
47 / 42(2)
46 / 47(2)
49 / 46(2)
50 / 47(2)
32
dB
dB
dB
dB
dB
dB
Wanted signal at –79 dBm, modulated interferer at
±3 MHz, BER = 10–3
Wanted signal at –79 dBm, modulated interferer at
±4 MHz, BER = 10–3
Wanted signal at –79 dBm, modulated interferer at
±6 MHz, BER = 10–3
Alternate channel rejection,
±7 MHz(1)
Wanted signal at –79 dBm, modulated interferer at
≥±7 MHz, BER = 10–3
Wanted signal at –79 dBm, modulated interferer at
Selectivity, image frequency(1)
image frequency, BER = 10–3
Note that Image frequency + 1 MHz is the Co-channel
–1 MHz. Wanted signal at –79 dBm, modulated
interferer at ±1 MHz from image frequency, BER =
10–3
Selectivity, image frequency
±1 MHz(1)
5 / 32(2)
dB
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Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Blocker rejection, ±8 MHz and
above(1)
Wanted signal at –79 dBm, modulated interferer at
>46
dB
±8 MHz and above, BER = 10–3
Out-of-band blocking (3)
Out-of-band blocking
Out-of-band blocking
30 MHz to 2000 MHz
2003 MHz to 2399 MHz
2484 MHz to 2997 MHz
dBm
dBm
dBm
–40
–19
–22
Wanted signal at 2402 MHz, –76 dBm. Two
interferers at 2405 and 2408 MHz respectively, at the
given power level
Intermodulation
dBm
–42
(1) Numbers given as I/C dB.
(2) X / Y, where X is +N MHz and Y is –N MHz.
(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification.
8.7 125-kbps Coded (Bluetooth 5) –TX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Differential mode, delivered to a single-ended 50-Ωload
through a balun
Output power, highest setting
5
dBm
Measured on CC2650EM-4XS, delivered to a single-ended
50-Ωload
Output power, highest setting
Output power, lowest setting
2
dBm
dBm
dBm
dBm
dBm
dBm
Delivered to a single-ended 50-Ωload through a balun
f < 1 GHz, outside restricted bands
f < 1 GHz, restricted bands ETSI
–21
–43
–65
–71
–46
Spurious emission conducted
measurement(1)
f < 1 GHz, restricted bands FCC
f > 1 GHz, including harmonics
(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2
(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
8.8 500-kbps Coded (Bluetooth 5) –RX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
Receiver sensitivity
dBm
–101
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
Receiver saturation
>5
dBm
240 kHz
500 ppm
330 ppm
dB
Difference between the incoming carrier frequency
and the internally generated carrier frequency
Frequency error tolerance
Data rate error tolerance
Data rate error tolerance
Co-channel rejection (1)
Selectivity, ±1 MHz (1)
–240
–500
–310
Difference between incoming data rate and the
internally generated data rate (37-byte packets)
Difference between incoming data rate and the
internally generated data rate (255-byte packets)
Wanted signal at –72 dBm, modulated interferer in
–5
9 / 5(2)
channel, BER = 10–3
Wanted signal at –72 dBm, modulated interferer at
dB
±1 MHz, BER = 10–3
Wanted signal at –72 dBm, modulated interferer at
±2 MHz, Image frequency is at –2 MHz, BER = 10–3
Selectivity, ±2 MHz (1)
41 / 31(2)
dB
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Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Wanted signal at –72 dBm, modulated interferer at
Selectivity, ±3 MHz (1)
44 / 41(2)
dB
±3 MHz, BER = 10–3
Wanted signal at –72 dBm, modulated interferer at
Selectivity, ±4 MHz (1)
Selectivity, ±6 MHz (1)
44 / 44(2)
44 / 44(2)
44 / 44(2)
31
dB
dB
dB
dB
±4 MHz, BER = 10–3
Wanted signal at –72 dBm, modulated interferer at
±6 MHz, BER = 10–3
Alternate channel rejection,
±7 MHz(1)
Wanted signal at –72 dBm, modulated interferer at
≥±7 MHz, BER = 10–3
Wanted signal at –72 dBm, modulated interferer at
Selectivity, image frequency(1)
image frequency, BER = 10–3
Note that Image frequency + 1 MHz is the Co-channel
–1 MHz. Wanted signal at –72 dBm, modulated
interferer at ±1 MHz from image frequency, BER =
10–3
Selectivity, image frequency
±1 MHz(1)
5 / 41(2)
dB
Blocker rejection, ±8 MHz and
above(1)
Wanted signal at –72 dBm, modulated interferer at
44
dB
±8 MHz and above, BER = 10–3
Out-of-band blocking (3)
Out-of-band blocking
Out-of-band blocking
30 MHz to 2000 MHz
2003 MHz to 2399 MHz
2484 MHz to 2997 MHz
dBm
dBm
dBm
–35
–19
–19
Wanted signal at 2402 MHz, –69 dBm. Two
interferers at 2405 and 2408 MHz respectively, at the
given power level
Intermodulation
dBm
–37
(1) Numbers given as I/C dB.
(2) X / Y, where X is +N MHz and Y is –N MHz.
(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification.
8.9 500-kbps Coded (Bluetooth 5) –TX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Differential mode, delivered to a single-ended 50-Ωload
through a balun
Output power, highest setting
5
dBm
Measured on CC2650EM-4XS, delivered to a single-ended
50-Ωload
Output power, highest setting
Output power, lowest setting
2
dBm
dBm
dBm
dBm
dBm
dBm
Delivered to a single-ended 50-Ωload through a balun
f < 1 GHz, outside restricted bands
f < 1 GHz, restricted bands ETSI
–21
–43
–65
–71
–46
Spurious emission conducted
measurement(1)
f < 1 GHz, restricted bands FCC
f > 1 GHz, including harmonics
(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2
(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
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8.10 1-Mbps GFSK (Bluetooth low energy) –RX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
Receiver sensitivity
dBm
–97
Single-ended mode. Measured on CC2650EM-4XS,
at the SMA connector, BER = 10–3
Receiver sensitivity
dBm
dBm
–96
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
Receiver saturation
4
0
Single-ended mode. Measured on CC2650EM-4XS,
at the SMA connector, BER = 10–3
Receiver saturation
dBm
Difference between the incoming carrier frequency
and the internally generated carrier frequency
Frequency error tolerance
Data rate error tolerance
Co-channel rejection(1)
Selectivity, ±1 MHz(1)
Selectivity, ±2 MHz(1)
Selectivity, ±3 MHz(1)
Selectivity, ±4 MHz(1)
350 kHz
750 ppm
dB
–350
–750
Difference between incoming data rate and the
internally generated data rate
Wanted signal at –67 dBm, modulated interferer in
–6
7 / 3(2)
34 / 25(2)
38 / 26(2)
42 / 29(2)
32
channel, BER = 10–3
Wanted signal at –67 dBm, modulated interferer at
dB
±1 MHz, BER = 10–3
Wanted signal at –67 dBm, modulated interferer at
dB
±2 MHz, BER = 10–3
Wanted signal at –67 dBm, modulated interferer at
dB
±3 MHz, BER = 10–3
Wanted signal at –67 dBm, modulated interferer at
dB
±4 MHz, BER = 10–3
Wanted signal at –67 dBm, modulated interferer at
≥±5 MHz, BER = 10–3
Selectivity, ±5 MHz or more(1)
Selectivity, image frequency(1)
dB
dB
dB
Wanted signal at –67 dBm, modulated interferer at
25
image frequency, BER = 10–3
Selectivity, image frequency
±1 MHz(1)
Wanted signal at –67 dBm, modulated interferer at
3 / 26(2)
±1 MHz from image frequency, BER = 10–3
Out-of-band blocking (3)
Out-of-band blocking
Out-of-band blocking
Out-of-band blocking
30 MHz to 2000 MHz
2003 MHz to 2399 MHz
2484 MHz to 2997 MHz
3000 MHz to 12.75 GHz
dBm
dBm
dBm
dBm
–20
–5
–8
–10
Wanted signal at 2402 MHz, –64 dBm. Two
interferers at 2405 and 2408 MHz respectively, at the
given power level
Intermodulation
dBm
dBm
–34
–71
Conducted measurement in a 50-Ωsingle-ended
load. Suitable for systems targeting compliance with
EN 300 328, EN 300 440 class 2, FCC CFR47, Part
15 and ARIB STD-T-66
Spurious emissions,
30 to 1000 MHz
Conducted measurement in a 50-Ωsingle-ended
load. Suitable for systems targeting compliance with
EN 300 328, EN 300 440 class 2, FCC CFR47, Part
15 and ARIB STD-T-66
Spurious emissions,
1 to 12.75 GHz
dBm
–62
RSSI dynamic range
RSSI accuracy
70
±4
dB
dB
(1) Numbers given as I/C dB.
(2) X / Y, where X is +N MHz and Y is –N MHz.
(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification.
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8.11 1-Mbps GFSK (Bluetooth low energy) –TX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Differential mode, delivered to a single-ended 50-Ωload
through a balun
Output power, highest setting
5
dBm
Measured on CC2650EM-4XS, delivered to a single-ended
50-Ωload
Output power, highest setting
Output power, lowest setting
2
dBm
dBm
dBm
dBm
dBm
dBm
Delivered to a single-ended 50-Ωload through a balun
f < 1 GHz, outside restricted bands
f < 1 GHz, restricted bands ETSI
–21
–43
–65
–71
–46
Spurious emission conducted
measurement(1)
f < 1 GHz, restricted bands FCC
f > 1 GHz, including harmonics
(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2
(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
8.12 2-Mbps GFSK (Bluetooth 5) –RX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
Receiver sensitivity
dBm
–90
Differential mode. Measured at the CC2650EM-5XD
SMA connector, BER = 10–3
Receiver saturation
3
dBm
500 kHz
1000 ppm
dB
Difference between the incoming carrier frequency and
the internally generated carrier frequency
Frequency error tolerance
Data rate error tolerance
Co-channel rejection(1)
–300
Difference between incoming data rate and the
internally generated data rate
–1000
Wanted signal at –67 dBm, modulated interferer in
–7
8 / 4(2)
channel, BER = 10–3
Wanted signal at –67 dBm, modulated interferer at
±2 MHz, Image frequency is at –2 MHz BER = 10–3
Selectivity, ±2 MHz(1)
Selectivity, ±4 MHz(1)
Selectivity, ±6 MHz(1)
dB
dB
dB
dB
dB
Wanted signal at –67 dBm, modulated interferer at
31 / 26(2)
37 / 38(2)
37 / 36(2)
4
±4 MHz, BER = 10–3
Wanted signal at –67 dBm, modulated interferer at
±6 MHz, BER = 10–3
Alternate channel rejection,
±7 MHz(1)
Wanted signal at –67 dBm, modulated interferer at ≥
±7 MHz, BER = 10–3
Wanted signal at –67 dBm, modulated interferer at
Selectivity, image frequency(1)
image frequency, BER = 10–3
Note that Image frequency + 2 MHz is the Co-channel.
Wanted signal at –67 dBm, modulated interferer at
±2 MHz from image frequency, BER = 10–3
Selectivity, image frequency
±2 MHz(1)
–7 / 26(2)
dB
Out-of-band blocking(3)
Out-of-band blocking
Out-of-band blocking
Out-of-band blocking
30 MHz to 2000 MHz
2003 MHz to 2399 MHz
2484 MHz to 2997 MHz
3000 MHz to 12.75 GHz
dBm
dBm
dBm
dBm
–33
–15
–12
–10
Wanted signal at 2402 MHz, –64 dBm. Two interferers
at 2408 and 2414 MHz respectively, at the given power
level
Intermodulation
dBm
–45
(1) Numbers given as I/C dB.
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(2) X / Y, where X is +N MHz and Y is –N MHz.
(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification.
8.13 2-Mbps GFSK (Bluetooth 5) –TX
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Differential mode, delivered to a single-ended 50-Ωload
through a balun
Output power, highest setting
5
dBm
Measured on CC2650EM-4XS, delivered to a single-ended
50-Ωload
Output power, highest setting
Output power, lowest setting
2
dBm
dBm
dBm
dBm
dBm
dBm
Delivered to a single-ended 50-Ωload through a balun
f < 1 GHz, outside restricted bands
f < 1 GHz, restricted bands ETSI
–21
–43
–65
–71
–46
Spurious emission conducted
measurement(1)
f < 1 GHz, restricted bands FCC
f > 1 GHz, including harmonics
(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2
(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
8.14 24-MHz Crystal Oscillator (XOSC_HF)
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
60
UNIT
Ω
ESR, Equivalent series resistance(2)
ESR, Equivalent series resistance(2)
20
6 pF < CL ≤9 pF
80
5 pF < CL ≤6 pF
Ω
Relates to load capacitance (CL in
Farads)
LM, Motional inductance(2)
< 1.6 × 10–24 / CL
H
2
CL, Crystal load capacitance(2) (3)
Crystal frequency(2) (4)
5
9
pF
MHz
ppm
µs
24
Crystal frequency tolerance(2) (5)
Start-up time(4) (6)
40
–40
150
(1) Probing or otherwise stopping the crystal while the DC/DC converter is enabled may cause permanent damage to the device.
(2) The crystal manufacturer's specification must satisfy this requirement
(3) Adjustable load capacitance is integrated into the device. External load capacitors are not required
(4) Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V
(5) Includes initial tolerance of the crystal, drift over temperature, ageing and frequency pulling due to incorrect load capacitance. As per
Bluetooth specification.
(6) Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection.
8.15 32.768-kHz Crystal Oscillator (XOSC_LF)
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
Crystal frequency(1)
TEST CONDITIONS
MIN
–500
6
TYP
MAX
UNIT
32.768
kHz
Crystal frequency tolerance, Bluetooth low-
energy applications(1) (2)
500
ppm
ESR Equivalent series resistance(1)
CL Crystal load capacitance(1)
30
100
12
kΩ
pF
(1) The crystal manufacturer's specification must satisfy this requirement
(2) Includes initial tolerance of the crystal, drift over temperature, ageing and frequency pulling due to incorrect load capacitance. As per
Bluetooth specification.
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8.16 48-MHz RC Oscillator (RCOSC_HF)
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Frequency
48
MHz
Uncalibrated frequency accuracy
Calibrated frequency accuracy(1)
Start-up time
±1%
±0.25%
5
µs
(1) Accuracy relative to the calibration source (XOSC_HF).
8.17 32-kHz RC Oscillator (RCOSC_LF)
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
Calibrated frequency(1)
Temperature coefficient
TEST CONDITIONS
MIN
TYP
32.8
80
MAX
UNIT
kHz
ppm/°C
(1) The frequency accuracy of the Real Time Clock (RTC) is not directly dependent on the frequency accuracy of the 32-kHz RC
Oscillator. The RTC can be calibrated to an accuracy within ±500 ppm of 32.768 kHz by measuring the frequency error of RCOSC_LF
relative to XOSC_HF and compensating the RTC tick speed. The procedure is explained in Running Bluetooth® Low Energy on
CC2640 Without 32 kHz Crystal.
8.18 ADC Characteristics
Tc = 25°C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted.(1)
PARAMETER
Input voltage range
Resolution
TEST CONDITIONS
MIN
TYP
MAX UNIT
0
VDDS
V
12
Bits
ksps
LSB
LSB
LSB
LSB
Sample rate
200
Offset
Internal 4.3-V equivalent reference(2)
Internal 4.3-V equivalent reference(2)
2
2.4
Gain error
DNL(3) Differential nonlinearity
>–1
±3
INL(4)
Integral nonlinearity
Internal 4.3-V equivalent reference(2), 200 ksps,
9.6-kHz input tone
9.8
10
ENOB Effective number of bits
VDDS as reference, 200 ksps, 9.6-kHz input tone
Bits
dB
dB
dB
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
11.1
Internal 4.3-V equivalent reference(2), 200 ksps,
9.6-kHz input tone
–65
–69
–71
THD
Total harmonic distortion VDDS as reference, 200 ksps, 9.6-kHz input tone
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
Internal 4.3-V equivalent reference(2), 200 ksps,
9.6-kHz input tone
60
63
69
Signal-to-noise
and
Distortion ratio
SINAD,
SNDR
VDDS as reference, 200 ksps, 9.6-kHz input tone
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
Internal 4.3-V equivalent reference(2), 200 ksps,
9.6-kHz input tone
67
68
73
Spurious-free dynamic
range
SFDR
VDDS as reference, 200 ksps, 9.6-kHz input tone
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
clock-
cycles
Conversion time
Serial conversion, time-to-output, 24-MHz clock
50
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Tc = 25°C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted.(1)
PARAMETER
TEST CONDITIONS
Internal 4.3-V equivalent reference(2)
VDDS as reference
MIN
TYP
0.66
0.75
MAX UNIT
Current consumption
Current consumption
mA
mA
Equivalent fixed internal reference (input voltage scaling
enabled). For best accuracy, the ADC conversion should
be initiated through the TIRTOS API in order to include the
gain/offset compensation factors stored in FCFG1.
Reference voltage
4.3(2) (5)
V
Fixed internal reference (input voltage scaling disabled).
For best accuracy, the ADC conversion should be initiated
through the TIRTOS API in order to include the gain/offset
compensation factors stored in FCFG1. This value is
derived from the scaled value (4.3 V) as follows:
Vref = 4.3 V × 1408 / 4095
Reference voltage
1.48
V
VDDS as reference (Also known as RELATIVE) (input
voltage scaling enabled)
Reference voltage
Reference voltage
VDDS
V
V
VDDS as reference (Also known as RELATIVE) (input
voltage scaling disabled)
VDDS /
2.82(5)
200 ksps, voltage scaling enabled. Capacitive input, Input
impedance depends on sampling frequency and sampling
time
Input impedance
>1
MΩ
(1) Using IEEE Std 1241™-2010 for terminology and test methods.
(2) Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V.
(3) No missing codes. Positive DNL typically varies from +0.3 to +3.5, depending on device (see 图8-21).
(4) For a typical example, see 图8-22.
(5) Applied voltage must be within absolute maximum ratings (节8.1) at all times.
8.19 Temperature Sensor
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
°C
Resolution
Range
4
85
°C
–40
Accuracy
±5
°C
Supply voltage coefficient(1)
3.2
°C/V
(1) Automatically compensated when using supplied driver libraries.
8.20 Battery Monitor
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
mV
V
Resolution
Range
50
1.8
3.8
Accuracy
13
mV
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8.21 Synchronous Serial Interface (SSI)
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
Device operating as slave
Device operating as slave
MIN
TYP
MAX
UNIT
system
clocks
S1(1) tclk_per (SSIClk period)
12
65024
S2(1) tclk_high (SSIClk high time)
S3(1) tclk_low (SSIClk low time)
0.5
0.5
tclk_per
tclk_per
Device operating as slave
One-way communication to slave, device
operating as master
system
clocks
S1 (TX only)(1) tclk_per (SSIClk period)
S1 (TX and RX)(1) tclk_per (SSIClk period)
4
8
65024
65024
Normal duplex operation, device operating
as master
system
clocks
S2(1) tclk_high (SSIClk high time)
S3(1) tclk_low (SSIClk low time)
Device operating as master
Device operating as master
0.5
0.5
tclk_per
tclk_per
(1) Refer to SSI timing diagrams 图8-1, 图8-2, and 图8-3.
S1
S2
SSIClk
S3
SSIFss
SSITx
MSB
LSB
SSIRx
4 to 16 bits
图8-1. SSI Timing for TI Frame Format (FRF = 01), Single Transfer Timing Measurement
S2
S1
SSIClk
SSIFss
SSITx
SSIRx
S3
MSB
LSB
8-bit control
0
MSB
LSB
4 to 16 bits output data
图8-2. SSI Timing for MICROWIRE Frame Format (FRF = 10), Single Transfer
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S1
S2
SSIClk
(SPO = 0)
S3
SSIClk
(SPO = 1)
SSITx
(Master)
MSB
LSB
SSIRx
(Slave)
MSB
LSB
SSIFss
图8-3. SSI Timing for SPI Frame Format (FRF = 00), With SPH = 1
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8.22 DC Characteristics
PARAMETER
TEST CONDITIONS
TA = 25°C, VDDS = 1.8 V
MIN
1.32
1.32
TYP
MAX UNIT
GPIO VOH at 8-mA load
GPIO VOL at 8-mA load
GPIO VOH at 4-mA load
GPIO VOL at 4-mA load
GPIO pullup current
IOCURR = 2, high-drive GPIOs only
IOCURR = 2, high-drive GPIOs only
IOCURR = 1
1.54
0.26
1.58
0.21
71.7
21.1
V
0.32
0.32
V
V
IOCURR = 1
V
Input mode, pullup enabled, Vpad = 0 V
Input mode, pulldown enabled, Vpad = VDDS
µA
µA
GPIO pulldown current
GPIO high/low input transition,
no hysteresis
IH = 0, transition between reading 0 and reading 1
IH = 1, transition voltage for input read as 0 →1
IH = 1, transition voltage for input read as 1 →0
0.88
1.07
V
V
GPIO low-to-high input transition,
with hysteresis
GPIO high-to-low input transition,
with hysteresis
0.74
0.33
V
V
GPIO input hysteresis
IH = 1, difference between 0 →1 and 1 →0 points
TA = 25°C, VDDS = 3.0 V
GPIO VOH at 8-mA load
GPIO VOL at 8-mA load
GPIO VOH at 4-mA load
GPIO VOL at 4-mA load
IOCURR = 2, high-drive GPIOs only
IOCURR = 2, high-drive GPIOs only
IOCURR = 1
2.68
0.33
2.72
0.28
V
V
V
V
IOCURR = 1
TA = 25°C, VDDS = 3.8 V
GPIO pullup current
Input mode, pullup enabled, Vpad = 0 V
Input mode, pulldown enabled, Vpad = VDDS
277
113
µA
µA
GPIO pulldown current
GPIO high/low input transition,
no hysteresis
IH = 0, transition between reading 0 and reading 1
IH = 1, transition voltage for input read as 0 →1
IH = 1, transition voltage for input read as 1 →0
1.67
1.94
V
V
GPIO low-to-high input transition,
with hysteresis
GPIO high-to-low input transition,
with hysteresis
1.54
0.4
V
V
GPIO input hysteresis
IH = 1, difference between 0 →1 and 1 →0 points
TA = 25°C
Lowest GPIO input voltage reliably interpreted as a
«High»
VIH
VIL
0.8 VDDS(1)
VDDS(1)
Highest GPIO input voltage reliably interpreted as a
«Low»
0.2
(1) Each GPIO is referenced to a specific VDDS pin. See the technical reference manual listed in 节11.3 for more details.
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8.23 Thermal Resistance Characteristics
NAME
RθJA
DESCRIPTION
Junction-to-ambient thermal resistance
RHB (°C/W)(1) (2)
RGZ (°C/W)(1) (2)
32.8
24.0
6.8
29.6
15.7
6.2
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
RθJC(top)
RθJB
PsiJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
0.3
0.3
PsiJB
6.8
6.2
1.9
1.9
RθJC(bot)
(1) °C/W = degrees Celsius per watt.
(2) These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RθJC] value, which is based on a
JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see these EIA/
JEDEC standards:
•
•
•
•
JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air).
JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages.
JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages.
JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements.
Power dissipation of 2 W and an ambient temperature of 70°C is assumed.
8.24 Timing Requirements
MIN
0
NOM
MAX UNIT
100 mV/µs
20 mV/µs
Rising supply-voltage slew rate
Falling supply-voltage slew rate
0
Falling supply-voltage slew rate, with low-power flash settings(1)
3
mV/µs
No limitation for negative
temperature gradient, or
outside standby mode
Positive temperature gradient in standby(2)
5
°C/s
CONTROL INPUT AC CHARACTERISTICS(3)
RESET_N low duration
1
µs
(1) For smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-µF VDDS input capacitor (see 图
10-1) must be used to ensure compliance with this slew rate.
(2) Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in temperature (see 节
8.17).
(3) TA = –40°C to +85°C, VDDS = 1.7 V to 3.8 V, unless otherwise noted.
8.25 Switching Characteristics
Measured on the TI CC2650EM-5XD reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
WAKEUP AND TIMING
14
151
µs
µs
µs
Idle →Active
Standby →Active
Shutdown →Active
1015
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8.26 Typical Characteristics
-94
-95
-96
-95
-96
-97
-98
-99
-97
-98
-99
-100
BLE 5XD Sensitivity
BLE 4XS Sensitivity
Sensitivity 4XS
Sensitivity 5XD
-101
1.8
2.3
2.8
VDDS (V)
3.3
3.8
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80
Temperature (èC)
D004
图8-5. BLE Sensitivity vs Supply Voltage (VDDS)
图8-4. BLE Sensitivity vs Temperature
6
-95
Sensitivity 5XD
Sensitivity 4XS
-95.5
-96
5
4
-96.5
-97
4XS 2-dBm Setting
5XD 5-dBm Setting
3
-97.5
-98
2
1
0
-98.5
-99
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80
Temperature (èC)
2400 2410 2420 2430 2440 2450 2460 2470 2480
Frequency (MHz)
D020
图8-7. TX Output Power vs Temperature
图8-6. BLE Sensitivity vs Channel Frequency
6
8
5-dBm setting (5XD)
0-dBm setting (4XS)
7
6
5
4
3
2
5
4
3
2
1
1
5XD 5-dBm Setting
4XS 2-dBm Setting
0
-1
0
2400 2410 2420 2430 2440 2450 2460 2470 2480
Frequency (MHz)
1.8
2.3
2.8
VDDS (V)
3.3
3.8
D021
D003
图8-9. TX Output Power vs Channel Frequency
图8-8. TX Output Power vs Supply Voltage (VDDS)
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16
10.5
10
9.5
9
4XS
5XD
4XS 0-dBm Setting
4XS 2-dBm Setting
5XD 5-dBm Setting
15
14
13
12
11
10
9
8.5
8
7.5
7
6.5
6
8
7
5.5
5
6
4.5
4
5
4
1.8
1.8
2.05
2.3
2.55 2.8 3.05
Voltage (V)
3.3
3.55
3.8
2
2.2 2.4 2.6 2.8
VDDS (V)
3
3.2 3.4 3.6 3.8
D016
D015
图8-11. RX Mode Current vs Supply Voltage
图8-10. TX Current Consumption vs Supply
(VDDS)
Voltage (VDDS)
7
12
10
8
5XD RX Current
4XS RX Current
6.8
6.6
6.4
6.2
6
6
4
2
5.8
5.6
5XD 5-dBm Setting
4XS 2-dBm Setting
0
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80
Temperature (èC)
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80
Temperature (èC)
D001
D002
图8-12. RX Mode Current Consumption vs
图8-13. TX Mode Current Consumption vs
Temperature
Temperature
3.1
5
Active Mode Current
Active Mode Current
4.5
4
3.05
3
3.5
3
2.95
2.9
2.5
2.85
2
1.8
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80
Temperature (èC)
2.3
2.8
VDDS (V)
3.3
3.8
D006
D007
图8-14. Active Mode (MCU Running, No
Peripherals) Current Consumption vs Temperature
图8-15. Active Mode (MCU Running, No
Peripherals) Current Consumption vs Supply
Voltage (VDDS)
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11.4
11.2
11
1006.4
1006.2
1006
Fs= 200 kHz, No Averaging
Fs= 200 kHz, 32 samples averaging
10.8
10.6
10.4
10.2
10
1005.8
1005.6
1005.4
1005.2
1005
9.8
9.6
1004.8
9.4
1.8
2.3
2.8
VDDS (V)
3.3
3.8
200300 500 1000 2000
5000 10000 20000
100000
D012
Input Frequency (Hz)
D009
图8-17. SoC ADC Output vs Supply Voltage (Fixed
图8-16. SoC ADC Effective Number of Bits vs Input
Frequency (Internal Reference, Scaling Enabled)
Input, Internal Reference)
1007.5
1007
10.5
ENOB Internal Reference (No Averaging)
ENOB Internal Reference (32 Samples Averaging)
10.4
10.3
10.2
10.1
10
1006.5
1006
1005.5
1005
9.9
9.8
9.7
1004.5
9.6
1k
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80
Temperature (èC)
10k
Sampling Frequency (Hz)
100k 200k
D013
D009A
图8-18. SoC ADC Output vs Temperature (Fixed
图8-19. SoC ADC ENOB vs Sampling Frequency
(Scaling Enabled, Input Frequency = FS / 10)
Input, Internal Reference)
图8-20. Standby Mode Supply Current vs Temperature
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3.5
3
2.5
2
1.5
1
0.5
0
-0.5
-1
-1.5
D010
ADC Code
图8-21. SoC ADC DNL vs ADC Code (Internal Reference)
3
2
1
0
-1
-2
-3
-4
0
200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200
ADC Code
D011
图8-22. SoC ADC INL vs ADC Code (Internal Reference)
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9 Detailed Description
9.1 Overview
The core modules of the CC2640R2L MCU are shown in 节9.2.
9.2 Functional Block Diagram
SimpleLink CC2640R2L Wireless MCU
cJTAG
RF Core
Main CPU
ROM
ADC
ADC
ARM
Cortex-M3
128-KB
Flash
Digital PLL
DSP modem
4-KB
8-KB
cache
Up to 48 MHz
61 µA/MHz
ARM
Cortex-M0
SRAM
20-KB
SRAM
ROM
General Peripherals / Modules
4× 32-bit Timers
I2C
UART
I2S
2× SSI (SPI, µW, TI)
Watchdog Timer
TRNG
15 / 31 GPIOs
AES
32-channel µDMA
12-bit ADC, 200 ksps
Time-to-Digital Converter
Temperature and Battery Monitor
RTC
2-KB AUX RAM
DC-DC Converter
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9.3 Main CPU
The SimpleLink™ CC2640R2L Wireless MCU contains an Arm Cortex-M3 (CM3) 32-bit CPU, which runs the
application and the higher layers of the protocol stack.
The CM3 processor provides a high-performance, low-cost platform that meets the system requirements of
minimal memory implementation, and low-power consumption, while delivering outstanding computational
performance and exceptional system response to interrupts.
Arm Cortex-M3 features include:
• 32-bit Arm Cortex-M3 architecture optimized for small-footprint embedded applications
• Outstanding processing performance combined with fast interrupt handling
• Arm Thumb®-2 mixed 16- and 32-bit instruction set delivers the high performance expected of a 32-bit Arm
core in a compact memory size usually associated with 8- and 16-bit devices, typically in the range of a few
kilobytes of memory for microcontroller-class applications:
– Single-cycle multiply instruction and hardware divide
– Atomic bit manipulation (bit-banding), delivering maximum memory use and streamlined peripheral control
– Unaligned data access, enabling data to be efficiently packed into memory
• Fast code execution permits slower processor clock or increases sleep mode time
• Harvard architecture characterized by separate buses for instruction and data
• Efficient processor core, system, and memories
• Hardware division and fast digital-signal-processing oriented multiply accumulate
• Saturating arithmetic for signal processing
• Deterministic, high-performance interrupt handling for time-critical applications
• Enhanced system debug with extensive breakpoint and trace capabilities
• Serial wire trace reduces the number of pins required for debugging and tracing
• Migration from the ARM7™ processor family for better performance and power efficiency
• Optimized for single-cycle flash memory use
• Ultra-low-power consumption with integrated sleep modes
• 1.25 DMIPS per MHz
9.4 RF Core
The RF Core contains an Arm Cortex-M0 processor that interfaces the analog RF and base-band circuits,
handles data to and from the system side, and assembles the information bits in a given packet structure. The
RF core offers a high level, command-based API to the main CPU.
The RF core is capable of autonomously handling the time-critical aspects of the radio protocols (Bluetooth low
energy) thus offloading the main CPU and leaving more resources for the user application.
The RF core has a dedicated 4-KB SRAM block and runs initially from separate ROM memory. The Arm Cortex-
M0 processor is not programmable by customers.
9.5 Memory
The Flash memory provides nonvolatile storage for code and data. The Flash memory is in-system
programmable.
The SRAM (static RAM) can be used for both storage of data and execution of code and is split into two 4-KB
blocks and two 6-KB blocks. Retention of the RAM contents in standby mode can be enabled or disabled
individually for each block to minimize power consumption. In addition, if flash cache is disabled, the 8-KB cache
can be used as a general-purpose RAM.
The ROM provides preprogrammed embedded TI-RTOS kernel, Driverlib, and lower layer protocol stack
software (Bluetooth low energy controller). It also contains a bootloader that can be used to reprogram the
device using SPI or UART. For CC2640R2Lxxx devices, the ROM contains Bluetooth 4.2 low energy host- and
controller software libraries, leaving more of the flash memory available for the customer application.
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9.6 Debug
The on-chip debug support is done through a dedicated cJTAG (IEEE 1149.7) or JTAG (IEEE 1149.1) interface.
9.7 Power Management
To minimize power consumption, the CC2640R2L MCU supports a number of power modes and power
management features (see 表9-1).
表9-1. Power Modes
SOFTWARE CONFIGURABLE POWER MODES
RESET PIN
HELD
MODE
ACTIVE
IDLE
Off
STANDBY
Off
SHUTDOWN
CPU
Active
Off
Off
Off
Off
Flash
On
Available
On
Off
SRAM
On
Available
On
Off
Off
Radio
Available
On
Off
Off
Off
Supply System
Current
On
Duty Cycled
1.5 µA
151 µs
Partial
Full
Off
Off
1.45 mA + 31 µA/MHz
650 µA
14 µs
Full
0.15 µA
1015 µs
No
0.1 µA
1015 µs
No
Wake-up Time to CPU Active(1)
Register Retention
SRAM Retention
–
Full
Full
Full
No
No
XOSC_HF or
RCOSC_HF
XOSC_HF or
RCOSC_HF
High-Speed Clock
Low-Speed Clock
Off
Off
Off
Off
Off
XOSC_LF or
RCOSC_LF
XOSC_LF or
RCOSC_LF
XOSC_LF or
RCOSC_LF
Peripherals
Available
Available
Available
Available
Active
Available
Available
Available
Available
Active
Off
Off
Off
Off
Off
Wake up on RTC
Available
Available
Available
Duty Cycled
Active
Wake up on Pin Edge
Wake up on Reset Pin
Brown Out Detector (BOD)
Power On Reset (POR)
Available
Available
Off
Off
Available
N/A
Active
Active
Active
N/A
(1) Not including RTOS overhead
In active mode, the application CM3 CPU is actively executing code. Active mode provides normal operation of
the processor and all of the peripherals that are currently enabled. The system clock can be any available clock
source (see 表9-1).
In idle mode, all active peripherals can be clocked, but the Application CPU core and memory are not clocked
and no code is executed. Any interrupt event will bring the processor back into active mode.
In standby mode, only the always-on domain (AON) is active. An external wake-up event or RTC event is
required to bring the device back to active mode. MCU peripherals with retention do not need to be reconfigured
when waking up again, and the CPU continues execution from where it went into standby mode. All GPIOs are
latched in standby mode.
In shutdown mode, the device is turned off entirely, including the AON domain. The I/Os are latched with the
value they had before entering shutdown mode. A change of state on any I/O pin defined as a wake-up from
Shutdown pin wakes up the device and functions as a reset trigger. The CPU can differentiate between a reset in
this way, a reset-by-reset pin, or a power-on-reset by reading the reset status register. The only state retained in
this mode is the latched I/O state and the Flash memory contents.
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9.8 Clock Systems
The CC2640R2L supports two external and two internal clock sources.
A 24-MHz crystal is required as the frequency reference for the radio. This signal is doubled internally to create a
48-MHz clock.
The 32-kHz crystal is optional. Bluetooth low energy requires a slow-speed clock with better than ±500 ppm
accuracy if the device is to enter any sleep mode while maintaining a connection. The internal 32-kHz RC
oscillator can in some use cases be compensated to meet the requirements. The low-speed crystal oscillator is
designed for use with a 32-kHz watch-type crystal.
The internal high-speed oscillator (48-MHz) can be used as a clock source for the CPU subsystem.
The internal low-speed oscillator (32.768-kHz) can be used as a reference if the low-power crystal oscillator is
not used.
The 32-kHz clock source can be used as external clocking reference through GPIO.
9.9 General Peripherals and Modules
The I/O controller controls the digital I/O pins and contains multiplexer circuitry to allow a set of peripherals to be
assigned to I/O pins in a flexible manner. All digital I/Os are interrupt and wake-up capable, have a
programmable pullup and pulldown function and can generate an interrupt on a negative or positive edge
(configurable). When configured as an output, pins can function as either push-pull or open-drain. Five GPIOs
have high drive capabilities (marked in bold in 节7).
The SSIs are synchronous serial interfaces that are compatible with SPI, MICROWIRE, and Texas Instruments
synchronous serial interfaces. The SSIs support both SPI master and slave up to 4 MHz.
The UART implements a universal asynchronous receiver/transmitter function. It supports flexible baud-rate
generation up to a maximum of 3 Mbps .
Timer 0 is a general-purpose timer module (GPTM), which provides two 16-bit timers. The GPTM can be
configured to operate as a single 32-bit timer, dual 16-bit timers or as a PWM module.
Timer 1, Timer 2, and Timer 3 are also GPTMs. Each of these timers is functionally equivalent to Timer 0.
In addition to these four timers, the RF core has its own timer to handle timing for RF protocols; the RF timer can
be synchronized to the RTC.
The I2C interface is used to communicate with devices compatible with the I2C standard. The I2C interface
supports 100-kHz and 400-kHz operation, and can serve as both I2C master and I2C slave.
The TRNG module provides a true, nondeterministic noise source for the purpose of generating keys,
initialization vectors (IVs), and other random number requirements. The TRNG is built on 24 ring oscillators that
create unpredictable output to feed a complex nonlinear combinatorial circuit.
The watchdog timer is used to regain control if the system fails due to a software error after an external device
fails to respond as expected. The watchdog timer can generate an interrupt or a reset when a predefined time-
out value is reached.
The device includes a direct memory access (µDMA) controller. The µDMA controller provides a way to offload
data transfer tasks from the CM3 CPU, allowing for more efficient use of the processor and the available bus
bandwidth. The µDMA controller can perform transfer between memory and peripherals. The µDMA controller
has dedicated channels for each supported on-chip module and can be programmed to automatically perform
transfers between peripherals and memory as the peripheral is ready to transfer more data. Some features of
the µDMA controller include the following (this is not an exhaustive list):
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• Highly flexible and configurable channel operation of up to 32 channels
• Transfer modes:
– Memory-to-memory
– Memory-to-peripheral
– Peripheral-to-memory
– Peripheral-to-peripheral
• Data sizes of 8, 16, and 32 bits
The AON domain contains circuitry that is always enabled, except for in Shutdown (where the digital supply is
off). This circuitry includes the following:
• The RTC can be used to wake the device from any state where it is active. The RTC contains three compare
and one capture registers. With software support, the RTC can be used for clock and calendar operation. The
RTC is clocked from the 32-kHz RC oscillator or crystal. The RTC can also be compensated to tick at the
correct frequency even when the internal 32-kHz RC oscillator is used instead of a crystal.
• The battery monitor and temperature sensor are accessible by software and give a battery status indication
as well as a coarse temperature measure.
The ADC is a 12-bit, 200 ksamples per second (ksps) ADC with eight inputs and a built-in voltage reference. The
ADC can be triggered by many different sources, including timers, I/O pins, software, and the RTC.
9.10 Voltage Supply Domains
The CC2640R2L device can interface to two or three different voltage domains depending on the package type.
On-chip level converters ensure correct operation as long as the signal voltage on each input/output pin is set
with respect to the corresponding supply pin (VDDS, VDDS2 or VDDS3). 表9-2 lists the pin-to-VDDS mapping.
表9-2. Pin Function to VDDS Mapping Table
Package
VQFN 7 × 7 (RGZ)
VQFN 5 × 5 (RHB)
DIO 23–30
Reset_N
DIO 7–14
Reset_N
VDDS(1)
VDDS2
VDDS3
DIO 0–6
JTAG
DIO 0–11
DIO 12–22
N/A
JTAG
(1) VDDS_DCDC must be connected to VDDS on the PCB.
9.11 System Architecture
Depending on the product configuration, CC26xx can function either as a Wireless Network Processor (WNP—
an IC running the wireless protocol stack, with the application running on a separate MCU), or as a System-on-
Chip (SoC), with the application and protocol stack running on the Arm Cortex-M3 core inside the device.
In the first case, the external host MCU communicates with the device using SPI or UART. In the second case,
the application must be written according to the application framework supplied with the wireless protocol stack.
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10 Application, Implementation, and Layout
备注
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI's customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
10.1 Application Information
Very few external components are required for the operation of the CC2640R2L device. This section provides
some general information about the various configuration options when using the CC2640R2L in an application,
and then shows two examples of application circuits with schematics and layout. This is only a small selection of
the many application circuit examples available as complete reference designs from the product folder on
www.ti.com.
图 10-1 shows the various RF front-end configuration options. The RF front end can be used in differential- or
single-ended configurations with the options of having internal or external biasing. These options allow for
various trade-offs between cost, board space, and RF performance. Differential operation with external bias
gives the best performance while single-ended operation with internal bias gives the least amount of external
components and the lowest power consumption. Reference designs exist for each of these options.
Red = Not necessary if internal bias is used
6.8 pF
Antenna
(50 Ohm)
Pin 3 (RXTX)
2.4 nH
1 pF
To VDDR
pins
Pin 2 (RF N)
Pin 1 (RF P)
2 nH
1 pF
2 nH
6.2œ6.8 nH
2.4œ2.7 nH
10µF
12 pF
Optional
inductor.
Only
needed for
DCDC
operation
Differential
operation
1 pF
10µH
Antenna
(50 Ohm)
Red = Not necessary if internal bias is used
CC26xx
Pin 2 (RF N)
DCDC_SW
Pin 3/4 (RXTX)
Pin 2 (RF N)
Pin 1 (RF P)
15 nH
(GND exposed die
attached pad)
Pin 1 (RF P)
2 nH
VDDS_DCDC
input
decoupling
10µFœ22µF
Single ended
operation
12 pF
1.2 pF
1.2 pF
Antenna
(50 Ohm)
Red = Not necessary if internal bias is used
Pin 3 (RXTX)
15 nH
24MHz
XTAL
2 nH
Pin 2 (RF N)
(Load caps
on chip)
12 pF
1.2 pF
1.2 pF
Single ended
operation with 2
antennas
Antenna
(50 Ohm)
15 nH
2 nH
Pin 1 (RF P)
12 pF
1.2 pF
1.2 pF
Copyright © 2016, Texas Instruments Incorporated
图10-1. CC2640R2L Application Circuit
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图 10-2 shows the various supply voltage configuration options. Not all power supply decoupling capacitors or
digital I/Os are shown. Exact pin positions will vary between the different package options. For a detailed
overview of power supply decoupling and wiring, see the TI reference designs and the CC26xx technical
reference manual ().
Internal DC-DC Regulator
Internal LDO Regulator
External Regulator
To All VDDR Pins
To All VDDR Pins
1.7 Vœ1.95 V to All VDDR- and VDDS Pins Except VDDS_DCDC
Ext.
Regulator
10 ꢀF
10 ꢀF
2.2 ꢀF
VDDS
VDDS
VDDS
VDDS
10 ꢀH
CC26xx
CC26xx
CC26xx
DCDC_SW Pin
Pin 3/4 (RXTX)
Pin 2 (RF N)
Pin 1 (RF P)
NC
Pin 3/4 (RXTX)
Pin 2 (RF N)
Pin 1 (RF P)
DCDC_SW Pin
Pin 3/4 (RXTX)
Pin 2 (RF N)
Pin 1 (RF P)
(GND Exposed Die
Attached Pad)
(GND Exposed Die
Attached Pad)
(GND Exposed Die
Attached Pad)
VDDS_DCDC Pin
VDDS_DCDC Pin
VDDS_DCDC Pin
VDDS_DCDC
Input Decoupling
10 ꢀFœ22 ꢀF
VDDS_DCDC
Input Decoupling
10 ꢀFœ22 ꢀF
24-MHz XTAL
(Load Caps
on Chip)
24-MHz XTAL
(Load Caps on Chip)
24-MHz XTAL
(Load Caps on Chip)
1.8 Vœ3.8 V
to All VDDS Pins
1.8 Vœ3.8 V
Supply Voltage
To All VDDS Pins
Copyright © 2016, Texas Instruments Incorporated
图10-2. Supply Voltage Configurations
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10.2 5 × 5 External Differential (5XD) Application Circuit
VDD_EB
VDDS
VDDS Decoupling Capacitors
VDDR
VDDR Decoupling Capacitors
BLM18HE152SN1
1
Pin 18
C6
10 µF
Pin 28
C4
100 nF
Pin 11
C3
100 nF
2
L1
Pin 32
Pin 29
C9
100 nF
DCDC_SW
2
1
FL1
C7
C2
DNM
10 uH
C8
10 µF
C10
100 nF
C16
100 nF
DNM
Place L1 and
C8 close to pin 17
VDDS
VDDR
U1
DIO_0
DIO_1
6
7
28
11
18
29
32
DIO_0
DIO_1
DIO_2
DIO_3
DIO_4
DIO_5
DIO_6
DIO_7
DIO_8
DIO_9
DIO_10
DIO_11
DIO_12
DIO_13
DIO_14
VDDS
VDDS2
DIO_2
DIO_3
DIO_4
8
C31
6.8 pF
VDDS_DCDC
VDDR
VDDR
9
RX_TX
RFN
10
15
16
20
21
22
23
24
25
26
27
50-Ω
DIO_5/JTAG_TDO
DIO_6/JTAG_TDI
DIO_7
1
DCDC_SW
17
Antenna
DCDC_SW
L21
2.4 nH
DIO_8
DIO_9
VDDS
C21
3
2
1
RX_TX
RF_N
RF_P
2
DIO_10
DIO_11
DIO_12
DIO_13
DIO_14
1
2
R1
1 pF
L11
L12
L13
1
2
1
2
L10
6.2 nH
100 k
31
30
X24M_P
X24M_N
X24M_P
X24M_N
nRESET
C122 nH
DNM
C13 2 nH
1 pF
RFP
1
2
19
14
13
RESET_N
JTAG_TCKC
JTAG_TMSC
5
4
JTAG_TCK
JTAG_TMS
X32K_Q2
X32K_Q1
2.7 nH
C11
C20
100 nF
12
33
1 pF
DCOUPL
C19
1 µF
VSS
CC2650F128RHB
Y2
24 MHz
Y1
32.768 kHz
1
3
C17
C18 C22
12 pF DNM
C23
2
4
12 pF
DNM
Copyright © 2016, Texas Instruments Incorporated
图10-3. 5 × 5 External Differential (5XD) Application Circuit
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10.2.1 Layout
图10-4. 5 × 5 External Differential (5XD) Layout
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11 Device and Documentation Support
11.1 Device Nomenclature
To designate the stages in the product development cycle, TI assigns prefixes to all pre-production part numbers
or date-code markings. Each device has one of three prefixes/identifications: X, P, or null (no prefix) (for
example, CC2640R2L is in production; therefore, no prefix/identification is assigned).
Device development evolutionary flow:
X
P
Experimental device that is not necessarily representative of the final device's electrical specifications and
may not use production assembly flow.
Prototype device that is not necessarily the final silicon die and may not necessarily meet final electrical
specifications.
null Production version of the silicon die that is fully qualified.
Production devices have been characterized fully, and the quality and reliability of the device have been
demonstrated fully. TI's standard warranty applies.
Predictions show that prototype devices (X or P) have a greater failure rate than the standard production
devices. Texas Instruments recommends that these devices not be used in any production system because their
expected end-use failure rate still is undefined. Only qualified production devices are to be used.
TI device nomenclature also includes a suffix with the device family name. This suffix indicates the package type
(for example, RGZ).
For orderable part numbers of the CC2640R2L device in the RHB and RGZ package types, see the Package
Option Addendum of this document, the TI website (www.ti.com), or contact your TI sales representative.
CC26 xx yyy
zzz
(R/T)
PREFIX
X = Experimental device
Blank = Qualified device
R = Large Reel
T = Small Reel
DEVICE FAMILY
SimpleLink™ Multistandard
Wireless MCU
PACKAGE DESIGNATOR
RGZ = 48-pin VQFN (Very Thin Quad Flatpack No-Lead)
RHB = 32-pin VQFN (Very Thin Quad Flatpack No-Lead)
DEVICE
40 = Bluetooth
ROM version
F128 = ROM version 1
R2 = ROM version 2
图11-1. Device Nomenclature
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11.2 Tools and Software
TI offers an extensive line of development tools, including tools to evaluate the performance of the processors,
generate code, develop algorithm implementations, and fully integrate and debug software and hardware
modules.
The following products support development of the CC2640R2L device applications:
Software Tools:
SmartRF Studio 7 is a PC application that helps designers of radio systems to easily evaluate the RF-IC at an
early stage in the design process.
• Test functions for sending and receiving radio packets, continuous wave transmit and receive
• Evaluate RF performance on custom boards by wiring it to a supported evaluation board or debugger
• Can also be used without any hardware, but then only to generate, edit and export radio configuration
settings
• Can be used in combination with several development kits for Texas Instruments’CCxxxx RF-ICs
IDEs and Compilers:
Code Composer Studio™ Integrated Development Environment (IDE):
• Integrated development environment with project management tools and editor
• Code Composer Studio (CCS) 7.0 and later has built-in support for the CC26xx device family
• Best support for XDS debuggers; XDS100v3, XDS110 and XDS200
• High integration with TI-RTOS with support for TI-RTOS Object View
IAR Embedded Workbench® for Arm®:
• Integrated development environment with project management tools and editor
• IAR EWARM 7.80.1 and later has built-in support for the CC26xx device family
• Broad debugger support, supporting XDS100v3, XDS200, IAR I-Jet and Segger J-Link
• Integrated development environment with project management tools and editor
• RTOS plugin available for TI-RTOS
For a complete listing of development-support tools for the CC2640R2L platform, visit the Texas Instruments
website at www.ti.com. For information on pricing and availability, contact the nearest TI field sales office or
authorized distributor.
11.3 Documentation Support
To receive notification of documentation updates, navigate to the device product folder on ti.com (CC2640R2L).
In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that
has changed. For change details, review the revision history included in any revised document.
The current documentation that describes the CC2640R2L devices, related peripherals, and other technical
collateral is listed in the following.
Technical Reference Manual
CC13xx, CC26xx SimpleLink™ Wireless MCU Technical Reference Manual
Errata
CC2640R2L SimpleLink™ Wireless MCU Errata
11.4 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
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11.5 Texas Instruments Low-Power RF Website
Texas Instruments' Low-Power RF website has all the latest products, application and design notes, FAQ
section, news and events updates. Go to www.ti.com/lprf.
11.6 Low-Power RF eNewsletter
The Low-Power RF eNewsletter is up-to-date on new products, news releases, developers’ news, and other
news and events associated with low-power RF products from TI. The Low-Power RF eNewsletter articles
include links to get more online information.
Sign up at: www.ti.com/lprfnewsletter
11.7 Trademarks
SmartRF™, Code Composer Studio™, LaunchPad™, and TI E2E™ are trademarks of Texas Instruments.
IEEE Std 1241™ is a trademark of Institute of Electrical and Electronics Engineers, Incorporated.
ARM7™ is a trademark of Arm Limited (or its subsidiaries).
Arm®, Cortex®, and Thumb® are registered trademarks of Arm Limited (or its subsidiaries).
CoreMark® is a registered trademark of Embedded Microprocessor Benchmark Consortium.
蓝牙® is a registered trademark of Bluetooth SIG Inc.
IAR Embedded Workbench® is a registered trademark of IAR Systems AB.
Wi-Fi® is a registered trademark of Wi-Fi Alliance.
ZigBee® is a registered trademark of ZigBee Alliance.
所有商标均为其各自所有者的财产。
11.8 静电放电警告
静电放电(ESD) 会损坏这个集成电路。德州仪器(TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理
和安装程序,可能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级,大至整个器件故障。精密的集成电路可能更容易受到损坏,这是因为非常细微的参
数更改都可能会导致器件与其发布的规格不相符。
11.9 Export Control Notice
Recipient agrees to not knowingly export or re-export, directly or indirectly, any product or technical data (as
defined by the U.S., EU, and other Export Administration Regulations) including software, or any controlled
product restricted by other applicable national regulations, received from disclosing party under nondisclosure
obligations (if any), or any direct product of such technology, to any destination to which such export or re-export
is restricted or prohibited by U.S. or other applicable laws, without obtaining prior authorization from U.S.
Department of Commerce and other competent Government authorities to the extent required by those laws.
11.10 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
25-Jan-2023
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
CC2640R2LRGZR
CC2640R2LRHBR
ACTIVE
VQFN
VQFN
RGZ
48
32
2500 RoHS & Green
2500 RoHS & Green
NIPDAU
Level-3-260C-168 HR
Level-3-260C-168 HR
-40 to 85
-40 to 85
CC2640
R2L
Samples
Samples
ACTIVE
RHB
NIPDAU
CC2640
R2L
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
25-Jan-2023
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
25-Jan-2023
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
CC2640R2LRGZR
CC2640R2LRGZR
CC2640R2LRHBR
CC2640R2LRHBR
VQFN
VQFN
VQFN
VQFN
RGZ
RGZ
RHB
RHB
48
48
32
32
2500
2500
2500
2500
330.0
330.0
330.0
330.0
16.4
16.4
12.4
12.4
7.3
7.3
5.3
5.3
7.3
7.3
5.3
5.3
1.1
1.1
1.1
1.1
12.0
12.0
8.0
16.0
16.0
12.0
12.0
Q2
Q2
Q2
Q2
8.0
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
25-Jan-2023
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
CC2640R2LRGZR
CC2640R2LRGZR
CC2640R2LRHBR
CC2640R2LRHBR
VQFN
VQFN
VQFN
VQFN
RGZ
RGZ
RHB
RHB
48
48
32
32
2500
2500
2500
2500
336.6
367.0
336.6
367.0
336.6
367.0
336.6
367.0
31.8
35.0
31.8
35.0
Pack Materials-Page 2
GENERIC PACKAGE VIEW
RGZ 48
7 x 7, 0.5 mm pitch
VQFN - 1 mm max height
PLASTIC QUADFLAT PACK- NO LEAD
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4224671/A
www.ti.com
PACKAGE OUTLINE
VQFN - 1 mm max height
RGZ0048A
PLASTIC QUADFLAT PACK- NO LEAD
A
7.1
6.9
B
(0.1) TYP
7.1
6.9
SIDE WALL DETAIL
OPTIONAL METAL THICKNESS
PIN 1 INDEX AREA
(0.45) TYP
CHAMFERED LEAD
CORNER LEAD OPTION
1 MAX
C
SEATING PLANE
0.08 C
0.05
0.00
2X 5.5
5.15±0.1
(0.2) TYP
13
24
44X 0.5
12
25
SEE SIDE WALL
DETAIL
SYMM
2X
5.5
1
36
0.30
0.18
PIN1 ID
(OPTIONAL)
48X
48
37
SYMM
0.1
C A B
C
0.5
0.3
48X
0.05
SEE LEAD OPTION
4219044/D 02/2022
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for optimal thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
VQFN - 1 mm max height
RGZ0048A
PLASTIC QUADFLAT PACK- NO LEAD
2X (6.8)
5.15)
SYMM
(
48X (0.6)
37
48
48X (0.24)
44X (0.5)
1
36
SYMM
2X
2X
(5.5)
(6.8)
2X
(1.26)
2X
(1.065)
(R0.05)
TYP
25
12
21X (Ø0.2) VIA
TYP
24
13
2X (1.065)
2X (1.26)
2X (5.5)
LAND PATTERN EXAMPLE
SCALE: 15X
SOLDER MASK
OPENING
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
EXPOSED METAL
EXPOSED METAL
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4219044/D 02/2022
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
VQFN - 1 mm max height
RGZ0048A
PLASTIC QUADFLAT PACK- NO LEAD
2X (6.8)
SYMM
(
1.06)
37
48X (0.6)
48
48X (0.24)
44X (0.5)
1
36
SYMM
2X
2X
(5.5)
(6.8)
2X
(0.63)
2X
(1.26)
(R0.05)
TYP
25
12
24
13
2X
(1.26)
2X (0.63)
2X (5.5)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD
67% PRINTED COVERAGE BY AREA
SCALE: 15X
4219044/D 02/2022
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
GENERIC PACKAGE VIEW
RHB 32
5 x 5, 0.5 mm pitch
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4224745/A
www.ti.com
PACKAGE OUTLINE
RHB0032E
VQFN - 1 mm max height
S
C
A
L
E
3
.
0
0
0
PLASTIC QUAD FLATPACK - NO LEAD
5.1
4.9
B
A
PIN 1 INDEX AREA
(0.1)
5.1
4.9
SIDE WALL DETAIL
20.000
OPTIONAL METAL THICKNESS
C
1 MAX
SEATING PLANE
0.08 C
0.05
0.00
2X 3.5
(0.2) TYP
3.45 0.1
9
EXPOSED
THERMAL PAD
16
28X 0.5
8
17
SEE SIDE WALL
DETAIL
2X
SYMM
33
3.5
0.3
0.2
32X
24
0.1
C A B
C
1
0.05
32
25
PIN 1 ID
(OPTIONAL)
SYMM
0.5
0.3
32X
4223442/B 08/2019
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
RHB0032E
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(
3.45)
SYMM
32
25
32X (0.6)
1
24
32X (0.25)
(1.475)
28X (0.5)
33
SYMM
(4.8)
(
0.2) TYP
VIA
8
17
(R0.05)
TYP
9
16
(1.475)
(4.8)
LAND PATTERN EXAMPLE
SCALE:18X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4223442/B 08/2019
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
RHB0032E
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
4X ( 1.49)
(0.845)
(R0.05) TYP
32
25
32X (0.6)
1
24
32X (0.25)
28X (0.5)
(0.845)
SYMM
33
(4.8)
17
8
METAL
TYP
16
9
SYMM
(4.8)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 33:
75% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:20X
4223442/B 08/2019
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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