CSD17302Q5A [TI]
30V, N-Channel NexFET™ Power MOSFETs; 30V ， N通道NexFET ™功率MOSFET
| 型号： | CSD17302Q5A |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 30V, N-Channel NexFET™ Power MOSFETs |
| 文件： | 总9页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
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The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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30V, N-Channel NexFET™ Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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采用 3mm x 3mm SON 封装的单路、11.8mΩ、30V、N 沟道 NexFET™ 功率 MOSFET | DQG | 8 | -55 to 150Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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