CSD17309Q3 [TI]
30V N-Channel NexFET⢠Power MOSFETs; 30V N通道NexFETâ ?? ¢功率MOSFET
| 型号： | CSD17309Q3 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 30V N-Channel NexFET⢠Power MOSFETs |
| 文件： | 总11页 (文件大小：520K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CSD17309Q3
www.ti.com
SLPS261A –MARCH 2010–REVISED OCTOBER 2010
30V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17309Q3
PRODUCT SUMMARY
1
FEATURES
VDS
Qg
Drain to Source Voltage
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
30
7.5
1.7
V
2
•
•
•
•
•
•
•
•
Optimized for 5V Gate Drive
Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
nC
nC
mΩ
mΩ
mΩ
V
Qgd
VGS = 3V
6.3
4.9
4.2
RDS(on) Drain to Source On Resistance
VGS = 4.5V
VGS = 8V
Pb Free Terminal Plating
RoHS Compliant
VGS(th)
Threshold Voltage
1.2
Halogen Free
ORDERING INFORMATION
SON 3.3-mm × 3.3-mm Plastic Package
Device
CSD17309Q3
Package
Media
Qty
Ship
SON 3.3-mm × 3.3-mm 13-Inch
Tape and
Reel
2500
APPLICATIONS
Plastic Package Reel
•
Notebook Point of Load
•
Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
V
VDS
VGS
Drain to Source Voltage
30
DESCRIPTION
Gate to Source Voltage
+10 / –8
60
V
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
Pulsed Drain Current, TA = 25°C(2)
Power Dissipation(1)
A
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
ID
20
A
IDM
PD
TJ,
112
A
2.8
W
Top View
Operating Junction and Storage
–55 to 150
162
°C
TSTG Temperature Range
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
Avalanche Energy, Single Pulse
ID = 57A, L = 0.1mH, RG = 25Ω
EAS
mJ
(1) Typical RqJA
= 45°C/W when mounted on a
1-inch2
(6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch
(1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300ms, duty cycle ≤2% TextAddedForSpacing
D
Text_added_for_spacing_Text_added_for_spacing
D
P0095-01
RDS(on) vs VGS
GATE CHARGE
16
14
12
10
8
8
ID = 18A
ID = 18A
VDS = 15V
7
6
5
4
3
2
1
0
TC = 125°C
6
4
TC = 25°C
2
0
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
VGS - Gate-to-Source Voltage - V
Qg - Gate Charge - nC
G006
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated
CSD17309Q3
SLPS261A –MARCH 2010–REVISED OCTOBER 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
IDSS
Drain to Source Voltage
VGS = 0V, ID = 250mA
30
V
mA
nA
V
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
VGS = 0V, VDS = 24V
VDS = 0V, VGS = +10 / –8V
VDS = VGS, ID = 250mA
VGS = 3.0V, ID = 18A
VGS = 4.5V, ID = 18A
VGS = 8V, ID = 18A
1
100
1.7
8.5
6.3
5.4
IGSS
VGS(th)
0.9
1.2
6.3
4.9
4.2
67
mΩ
mΩ
mΩ
S
RDS(on)
Drain to Source On Resistance
Transconductance
gfs
VDS = 15V, ID = 18A
Dynamic Characteristics
CISS
COSS
CRSS
Rg
Input Capacitance
1150
580
43
1440
750
56
pF
pF
pF
Ω
VGS = 0V, VDS = 15V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
Gate Charge Gate to Source
Gate Charge at Vth
Output Charge
1.2
7.5
1.7
2.5
1.3
15
2.4
10
Qg
nC
nC
nC
nC
nC
ns
ns
ns
ns
Qgd
Qgs
Qg(th)
QOSS
td(on)
tr
VDS = 15V, ID = 18A
VDS = 13V, VGS = 0V
Turn On Delay Time
Rise Time
6.1
9.9
13.2
3.6
VDS = 15V, VGS = 4.5V,
ID = 18A , RG = 2Ω
td(off)
tf
Turn Off Delay Time
Fall Time
Diode Characteristics
VSD
Qrr
trr
Diode Forward Voltage
IDS = 18A, VGS = 0V
0.85
30
1
V
Reverse Recovery Charge
Reverse Recovery Time
nC
ns
VDD = 13V, IF = 18A,
di/dt = 300A/ms
23
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
Thermal Resistance Junction to Case(1)
Thermal Resistance Junction to Ambient(1)(2)
MIN
TYP
MAX
UNIT
°C/W
°C/W
RqJC
RqJA
2
57
(1)
R
qJC is determined with the device mounted on a 1-inch2 (6.45-cm2), Cu pad on a 1.5-inch × 1.5-inch thick FR4 PCB. RqJC is specified
by design, whereas RqJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-inch2 2-oz.Cu.
2
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Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CSD17309Q3
CSD17309Q3
www.ti.com
SLPS261A –MARCH 2010–REVISED OCTOBER 2010
GATE
Source
GATE
Source
Max RqJA = 57°C/W
when mounted on
1 inch2 (6.45 cm2) of
2-oz. (0.071-mm thick)
Cu.
Max RqJA = 174°C/W
when mounted on a
minimum pad area of
2-oz. (0.071-mm thick)
Cu.
DRAIN
DRAIN
M0161-02
M0161-01
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
10
1
0.5
0.3
Duty Cycle = t1/t2
0.1
0.1
0.05
P
0.02
0.01
t1
0.01
t2
Typical RqJA = 139°C/W (min Cu)
TJ = P ´ ZqJA ´ RqJA
Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1k
tp - Pulse Duration - s
G012
Figure 1. Transient Thermal Impedance
Copyright © 2010, Texas Instruments Incorporated
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CSD17309Q3
SLPS261A –MARCH 2010–REVISED OCTOBER 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
50
45
40
35
30
25
20
15
10
5
50
45
40
35
VDS = 5V
TC = -55°C
VGS = 8V
VGS = 4.5V
VGS = 3.5V
VGS = 3V
30
25
20
15
10
5
TC = 25°C
TC = 125°C
VGS = 2.5V
0
0
0
0.2
0.4
0.6
0.8
1
1
0
0
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
3
VDS - Drain-to-Source Voltage - V
VGS - Gate-to-Source Voltage - V
G001
G002
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
3
2.5
2
8
7
6
5
4
3
2
1
0
f = 1MHz
VGS = 0V
ID = 18A
VDS = 15V
Coss = Cds + Cgd
Ciss = Cgd + Cgs
1.5
1
0.5
0
Crss = CGgd
0
2
4
6
8
10
12
5
10
15
20
25
30
Qg - Gate Charge - nC
VDS - Drain-to-Source Voltage - V
G003
G004
Figure 4. Gate Charge
Figure 5. Capacitance
16
14
12
10
8
1.6
1.4
1.2
1
ID = 18A
ID = 250µA
TC = 125°C
0.8
0.6
0.4
0.2
0
6
4
TC = 25°C
2
0
-75
-25
25
75
125
175
1
2
3
4
5
6
7
8
9
10
TC - Case Temperature - °C
VGS - Gate-to-Source Voltage - V
G005
G006
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
4
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Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CSD17309Q3
CSD17309Q3
www.ti.com
SLPS261A –MARCH 2010–REVISED OCTOBER 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
100
10
1.6
ID = 18A
VGS = 8V
1.4
1.2
1
1
TC = 125°C
0.1
0.8
0.6
0.4
0.2
0.01
0.001
0.0001
TC = 25°C
-75
-25
25
75
125
175
0
0.2
0.4
0.6
0.8
1
TC - Case Temperature - °C
VSD - Source-to-Drain Voltage - V
G007
G008
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
1k
1k
100
10
100
1ms
10
TC = 25°C
10ms
1
110101m10s
Area Limited
by RDS(on)
1s
0.1
TC = 125°C
Single Pulse
Typical RθJA = 139°C/W (min Cu)
DC
0.01
0.01
1
0.01
0.1
1
10
100
0.1
1
10
100
VDS - Drain-to-Source Voltage - V
t(AV) - Time in Avalanche - ms
G009
G010
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
70
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100 125 150 175
TC - Case Temperature - °C
G011
Figure 12. Maximum Drain Current vs. Temperature
Copyright © 2010, Texas Instruments Incorporated
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Product Folder Link(s): CSD17309Q3
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SLPS261A –MARCH 2010–REVISED OCTOBER 2010
www.ti.com
MECHANICAL DATA
Q3 Package Dimensions
D2
D
H
L
q
L1
A1
Top View
Side View
Bottom View
D
Front View
M0142-01
MILLIMETERS
INCHES
NOM
0.039
0.000
0.013
0.008
0.130
–
DIM
MIN
0.950
0.000
0.280
0.150
3.200
–
NOM
1.000
0.000
0.340
0.200
3.300
–
MAX
1.100
0.050
0.400
0.250
3.400
–
MIN
MAX
0.043
0.002
0.016
0.010
0.134
–
A
A1
b
0.037
0.000
0.011
0.006
0.126
–
c
D
D1
D2
E
1.650
3.200
–
1.750
3.300
–
1.800
3.400
–
0.065
0.126
–
0.069
0.130
–
0.071
0.134
–
E1
E2
e
2.350
2.450
0.650 TYP
0.450
0.450
–
2.550
0.093
0.096
0.026
0.018
0.018
–
0.100
H
0.35
0.35
–
0.550
0.550
–
0.014
0.014
–
0.022
0.022
–
L
L1
q
–
–
–
–
–
–
6
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Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CSD17309Q3
CSD17309Q3
www.ti.com
SLPS261A –MARCH 2010–REVISED OCTOBER 2010
Recommended PCB Pattern
3.50
0.56
0.41
2.31
0.63
M0143-01
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
Text added
Text added
Q3 Tape and Reel Information
4.00 0.ꢀ0 ꢁ(SS ꢂNoS ꢀ1
8.00 0.ꢀ0
2.00 0.0ꢃ
Ø ꢀ.ꢃ0
+0.ꢀ0
–0.00
3.60
M0ꢀ44-0ꢀ
Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2
2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm
3. Material: black static-dissipative polystyrene
4. All dimensions are in mm, unless otherwise specified.
5. Thickness: 0.30 ±0.05mm
6. MSL1 260°C (IR and convection) PbF reflow compatible
Copyright © 2010, Texas Instruments Incorporated
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SLPS261A –MARCH 2010–REVISED OCTOBER 2010
www.ti.com
REVISION HISTORY
Changes from Original (March 2010) to Revision A
Page
•
Deleted the Package Marking Information section ............................................................................................................... 7
8
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PACKAGE MATERIALS INFORMATION
www.ti.com
21-Jan-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
CSD17309Q3
SON
DQG
8
2500
330.0
12.8
3.6
3.6
1.2
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Jan-2011
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SON DQG
SPQ
Length (mm) Width (mm) Height (mm)
335.0 335.0 32.0
CSD17309Q3
8
2500
Pack Materials-Page 2
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