CSD19538Q3A [TI]
采用 3mm x 3mm SON 封装的单路、61mΩ、100V、N 沟道 NexFET™ 功率 MOSFET;
| 型号： | CSD19538Q3A |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 采用 3mm x 3mm SON 封装的单路、61mΩ、100V、N 沟道 NexFET™ 功率 MOSFET 局域网 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：581K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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CSD19538Q3A
ZHCSF23A –MAY 2016–REVISED MARCH 2017
CSD19538Q3A 100V、N 通道 NexFET™ 功率 MOSFET
1 特性
产品概要
1
•
•
•
•
•
•
•
超低 Qg 和 Qgd
TA=25°C
VDS
典型值
单位
V
低热阻
漏源电压
100
4.3
0.8
雪崩额定值
无铅
Qg
栅极电荷总量 (10V)
栅极电荷 栅极到漏极
nC
nC
Qgd
VGS = 6V
VGS = 10V
3.2
58
49
符合 RoHS 标准
无卤素
RDS(on) 漏源导通电阻
VGS(th) 阈值电压
mΩ
V
小外形尺寸无引线 (SON) 3.3mm × 3.3mm 塑料封
装
器件信息(1)
器件
包装介质
数量
封装
运输
2 应用范围
CSD19538Q3A
CSD19538Q3AT
13 英寸卷带
7 英寸卷带
3000
小外形尺寸无引线
(SON)
3.30mm × 3.30mm
塑料封装
卷带封
装
•
•
•
以太网供电 (PoE)
电源设备 (PSE)
电机控制
250
(1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。
3 说明
绝对最大额定值
TA=25°C
值
100
±20
15
单位
V
这款 100V、49mΩ、SON 3.3mm × 3.3mm NexFET
™功率金属氧化物半导体场效应晶体管 (MOSFET) 旨
在以最大限度降低导通损耗并减小以太网供电 (PoE)
应用中的电路板 尺寸。
VDS
VGS
漏源电压
栅源电压
V
持续漏极电流（受封装限制）
持续漏极电流（受芯片限制），TC = 25°C 时
测得
ID
14
A
俯视图
持续漏极电流(1)
脉冲漏极电流(2)
功率耗散(1)
4.9
37
IDM
PD
A
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
2.8
23
W
功率耗散，TC = 25°C
TJ， 工作结温，
-55 至 150
°C
Tstg
储存温度
雪崩能量，单一脉冲
ID = 12.7A，L = 0.1mH，RG = 25Ω
EAS
8.1
mJ
D
D
(1) RθJA = 45°C/W，这是一块厚度为 0.06 英寸环氧树脂 (FR4) 印
刷电路板 (PCB) 上的 1 英寸2，2 盎司铜焊盘上测得的典型
值。
P0093-01
(2) 最大 RθJC = 5.5°C/W，脉冲持续时间 ≤ 100μs，占空比 ≤ 1%。
RDS(on) 与 VGS 对比
栅极电荷
200
180
160
140
120
100
80
10
ID = 5 A
VDS = 50 V
TC = 25èC, ID = 5 A
TC = 125èC, ID = 5 A
9
8
7
6
5
4
3
2
1
0
60
40
20
0
0
2
4
6
8
10
12
14
16
18
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS - Gate-to-Source Voltage (V)
Qg - Gate Charge (nC)
D007
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLPS583
CSD19538Q3A
ZHCSF23A –MAY 2016–REVISED MARCH 2017
www.ti.com.cn
目录
6.1 接收文档更新通知 ..................................................... 7
6.2 社区资源.................................................................... 7
6.3 商标........................................................................... 7
6.4 静电放电警告............................................................. 7
6.5 Glossary.................................................................... 7
机械、封装和可订购信息 ......................................... 8
7.1 Q3A 封装尺寸............................................................ 8
7.2 Q3A 建议的 PCB 布局 .............................................. 9
7.3 Q3A 建议的模板布局................................................. 9
7.4 Q3A 卷带信息.......................................................... 10
1
2
3
4
5
特性.......................................................................... 1
应用范围................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information.................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
器件和文档支持........................................................ 7
7
6
4 修订历史记录
Changes from Original (May 2016) to Revision A
Page
•
•
•
已更改 把栅极电荷曲线中的测试电压 VDS从 100V 更改为 50V.............................................................................................. 1
Changed the test voltage VDS in Figure 4 from 100 V : to 50 V............................................................................................. 5
已添加 接收文档更新通知部分添加到器件和文档支持部分..................................................................................................... 7
2
版权 © 2016–2017, Texas Instruments Incorporated
CSD19538Q3A
www.ti.com.cn
ZHCSF23A –MAY 2016–REVISED MARCH 2017
5 Specifications
5.1 Electrical Characteristics
TA = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
STATIC CHARACTERISTICS
BVDSS
IDSS
Drain-to-source voltage
VGS = 0 V, ID = 250 μA
100
V
Drain-to-source leakage current
Gate-to-source leakage current
Gate-to-source threshold voltage
VGS = 0 V, VDS = 80 V
VDS = 0 V, VGS = 20 V
VDS = VGS, ID = 250 μA
VGS = 6 V, ID = 5 A
1
100
3.8
72
μA
nA
V
IGSS
VGS(th)
2.8
3.2
58
RDS(on)
gfs
Drain-to-source on resistance
Transconductance
mΩ
VGS = 10 V, ID = 5 A
VDS = 10 V, ID = 5 A
49
59
6.1
S
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
RG
Input capacitance
349
69
12.6
4.6
4.3
0.8
1.6
1
454
90
pF
pF
pF
Ω
Output capacitance
Reverse transfer capacitance
Series gate resistance
Gate charge total (10 V)
Gate charge gate-to-drain
Gate charge gate-to-source
Gate charge at Vth
Output charge
VGS = 0 V, VDS = 50 V, ƒ = 1 MHz
16.4
9.2
Qg
nC
nC
nC
nC
nC
ns
ns
ns
ns
Qgd
Qgs
Qg(th)
Qoss
td(on)
tr
VDS = 50 V, ID = 5 A
VDS = 50 V, VGS = 0 V
12.3
5
Turnon delay time
Rise time
3
VDS = 50 V, VGS = 10 V,
IDS = 5 A, RG = 0 Ω
td(off)
tf
Turnoff delay time
Fall time
7
2
DIODE CHARACTERISTICS
VSD
Qrr
trr
Diode forward voltage
Reverse recovery charge
Reverse recovery time
ISD = 5 A, VGS = 0 V
0.85
94
1
V
nC
ns
VDS= 50 V, IF = 5 A,
di/dt = 300 A/μs
32
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
Junction-to-case thermal resistance(1)
Junction-to-ambient thermal resistance(1)(2)
MIN
TYP
MAX
UNIT
°C/W
°C/W
RθJC
RθJA
5.5
55
(1)
R
θJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-
cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
Copyright © 2016–2017, Texas Instruments Incorporated
3
CSD19538Q3A
ZHCSF23A –MAY 2016–REVISED MARCH 2017
www.ti.com.cn
GATE
Source
GATE
Source
Max RθJA = 195°C/W
Max RθJA = 55°C/W
when mounted on 1-in2
(6.45-cm2) of 2-oz
when mounted on a
minimum pad area of
2-oz (0.071-mm) thick
Cu.
(0.071-mm) thick Cu.
DRAIN
DRAIN
M0161-02
M0161-01
5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
Figure 1. Transient Thermal Impedance
4
Copyright © 2016–2017, Texas Instruments Incorporated
CSD19538Q3A
www.ti.com.cn
ZHCSF23A –MAY 2016–REVISED MARCH 2017
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
30
30
27
24
21
18
15
12
9
TC = 125°C
TC = 25°C
TC = -55°C
27
24
21
18
15
12
9
6
6
VGS = 6 V
VGS = 8 V
VGS = 10 V
3
0
3
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
1
2
3
4
5
6
7
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
D002
D003
VDS = 5 V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
10000
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
1
0
10
20
30
40
50
60
70
80
90 100
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VDS - Drain-to-Source Voltage (V)
Qg - Gate Charge (nC)
D005
D004
ID = 5 A
VDS = 50 V
Figure 5. Capacitance
Figure 4. Gate Charge
200
180
160
140
120
100
80
3.8
3.6
3.4
3.2
TC = 25èC, ID = 5 A
TC = 125èC, ID = 5 A
3
2.8
2.6
2.4
2.2
60
40
20
0
0
2
4
6
8
10
12
14
16
18
20
-75 -50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
TC - Case Temperature (èC)
D007
D006
ID = 250 µA
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Figure 6. Threshold Voltage vs Temperature
Copyright © 2016–2017, Texas Instruments Incorporated
5
CSD19538Q3A
ZHCSF23A –MAY 2016–REVISED MARCH 2017
www.ti.com.cn
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
100
10
2.2
TC = 25°C
TC = 125°C
VGS = 6 V
VGS = 10 V
2
1.8
1.6
1.4
1.2
1
1
0.1
0.01
0.001
0.0001
0.8
0.6
0.4
-75 -50 -25
0
25
50
75 100 125 150 175
0
0.2
0.4
0.6
0.8
1
1.2
TC - Case Temperature (°C)
VSD - Source-to-Drain Voltage (V)
D008
D009
ID = 5 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
1000
100
10
1
TC = 25è C
TC = 125è C
100
10
1
0.1
DC
10 ms
1 ms
100 µs
10 µs
0.01
0.1
1
10
100
1000
0.01
0.1
1
VDS - Drain-to-Source Voltage (V)
TAV - Time in Avalanche (ms)
D010
D011
Single pulse, max RθJC = 5.5°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
18
15
12
9
6
3
0
-50
-25
0
25
50
75
100 125 150 175
TC - Case Temperature (èC)
D012
Figure 12. Maximum Drain Current vs Temperature
6
Copyright © 2016–2017, Texas Instruments Incorporated
CSD19538Q3A
www.ti.com.cn
ZHCSF23A –MAY 2016–REVISED MARCH 2017
6 器件和文档支持
6.1 接收文档更新通知
如需接收文档更新通知，请访问 www.ti.com.cn 网站上的器件产品文件夹。点击右上角的提醒我 (Alert me) 注册
后，即可每周定期收到已更改的产品信息。有关更改的详细信息，请查阅已修订文档中包含的修订历史记录。
6.2 社区资源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
6.3 商标
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
6.4 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损
伤。
6.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
版权 © 2016–2017, Texas Instruments Incorporated
7
CSD19538Q3A
ZHCSF23A –MAY 2016–REVISED MARCH 2017
www.ti.com.cn
7 机械、封装和可订购信息
以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对
本文档进行修订的情况下发生改变。要获得这份数据表的浏览器版本，请查阅左侧的导航栏。
7.1 Q3A 封装尺寸
8
版权 © 2016–2017, Texas Instruments Incorporated
CSD19538Q3A
www.ti.com.cn
ZHCSF23A –MAY 2016–REVISED MARCH 2017
7.2 Q3A 建议的 PCB 布局
有关针对
PCB
设计的建议电路布局布线，请参见《通过
PCB
布局布线技巧来减少振铃》（文献编
号：SLPA005）。
7.3 Q3A 建议的模板布局
版权 © 2016–2017, Texas Instruments Incorporated
9
CSD19538Q3A
ZHCSF23A –MAY 2016–REVISED MARCH 2017
www.ti.com.cn
7.4 Q3A 卷带信息
4.00 0.ꢀ0 ꢁ(SS ꢂNoS ꢀ1
8.00 0.ꢀ0
2.00 0.0ꢃ
Ø ꢀ.ꢃ0
+0.ꢀ0
–0.00
3.60
M0ꢀ44-0ꢀ
Notes: 1. 10 链轮孔距累积容差为 ±0.2
2. 每 100mm 长度的翘曲不能超过 1mm，在 250mm 长度上不累积。
3. 材料：黑色抗静电聚苯乙烯。
4. 所有尺寸单位均为 mm，除非另外注明。
5. 厚度：0.3 ± 0.05mm。
6. MSL1 260°C（红外和对流）PbF 回流焊兼容。
10
版权 © 2016–2017, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
CSD19538Q3A
CSD19538Q3AT
ACTIVE
ACTIVE
VSONP
VSONP
DNH
DNH
8
8
2500 RoHS & Green
250 RoHS & Green
SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-55 to 150
-55 to 150
19538
19538
SN
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
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