CSD23203WT [TI]
采用 1mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、19.4mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET | YZC | 6 | -55 to 150;
| 型号： | CSD23203WT |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 采用 1mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、19.4mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET | YZC | 6 | -55 to 150 栅 开关 晶体管 栅极 |
| 文件： | 总12页 (文件大小：693K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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CSD23203W
ZHCSD48A –DECEMBER 2014–REVISED AUGUST 2016
CSD23203W -8V P 通道 NexFET™功率金属氧化物半导体场效应晶体管
(MOSFET)
1 特性
产品概要
1
•
•
•
•
•
•
•
•
超低 Qg 和 Qgd
低导通电阻 RDS(on)
小尺寸
TA = 25°C
VDS
典型值
-8
单位
V
漏源电压
Qg
栅极电荷总量 (-4.5V)
栅极电荷（栅极到漏极）
4.9
nC
nC
mΩ
mΩ
mΩ
V
低厚度，0.62mm 高
无铅
Qgd
0.6
VGS = –1.8V
35
22
漏源
导通电阻
RDS(on)
VGS = -2.5V
VGS = -4.5V
符合 RoHS 环保标准
无卤素
16.2
VGS(th)
电压阈值
-0.8
CSP 1mm × 1.5mm 晶圆级封装
器件信息(1)
2 应用
器件
数量
3000 7 英寸卷带
250 7 英寸卷带
包装介质
封装
运输
•
•
•
电池管理
CSD23203W
1.00mm × 1.50mm
晶圆级封装
卷带封
装
CSD23203WT
负载开关
电池保护
(1) 如需了解所有可用封装，请参阅产品说明书末尾的可订购产品
附录。
3 说明
绝对最大额定值
这款 –8V、16.2mΩ、P 通道器件经过设计，能够以具
有出色散热特性的 1 × 1.5 mm 超薄小外形封装提供最
低的导通电阻和栅极电荷。
TA = 25°C
值
-8
单位
V
VDS
VGS
ID
漏源电压
栅源电压
-6
V
持续漏极电流(1)
脉冲漏极电流(2)
功率耗散
–3
A
顶视图
IDM
PD
–54
0.75
A
W
TJ，
Tstg
工作结温，
储存温度
-55 至 150
°C
5
5
{
{
D
{
(1) 器件在 105ºC 温度下运行。
(2) 典型 RθJA = 170°C/W，脉宽 ≤ 100 μs，占空比 ≤ 1%。
RDS(on) 与 VGS 对比
栅极电荷
60
50
40
30
20
10
0
5
TC = 25°C, I D = -1.5 A
TC = 125°C, I D = -1.5 A
ID = -1.5 A
VDS = -4 V
4
3
2
1
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
-VGS - Gate-To-Source Voltage (V)
Qg - Gate Charge (nC)
D007
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLPS533
CSD23203W
ZHCSD48A –DECEMBER 2014–REVISED AUGUST 2016
www.ti.com.cn
目录
6.1 接收文档更新通知 ..................................................... 7
6.2 社区资源.................................................................... 7
6.3 商标........................................................................... 7
6.4 静电放电警告............................................................. 7
6.5 Glossary.................................................................... 7
机械、封装和可订购信息 ......................................... 8
7.1 CSD23203W 封装尺寸.............................................. 8
7.2 焊盘布局建议............................................................. 9
7.3 卷带封装信息............................................................. 9
1
2
3
4
5
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information.................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
器件和文档支持........................................................ 7
7
6
4 修订历史记录
注：之前版本的页码可能与当前版本有所不同。
Changes from Original (December 2014) to Revision A
Page
•
•
在俯视图中更改了 MOSFET 机身连线.................................................................................................................................... 1
已添加 接收文档更新通知和社区资源部分.............................................................................................................................. 7
2
版权 © 2014–2016, Texas Instruments Incorporated
CSD23203W
www.ti.com.cn
ZHCSD48A –DECEMBER 2014–REVISED AUGUST 2016
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
STATIC CHARACTERISTICS
BVDSS
IDSS
Drain-to-source voltage
VGS = 0 V, ID = –250 μA
–8
V
Drain-to-source leakage current
Gate-to-source leakage current
Gate-to-source threshold voltage
VGS = 0 V, VDS = –6.4 V
VDS = 0 V, VGS = –6 V
–1
–100
–1.1
53
μA
nA
V
IGSS
VGS(th)
VDS = VGS, ID = –250 μA
VGS = –1.8 V, ID = –1.5 A
VGS = –2.5 V, ID = –1.5 A
VGS = –4.5 V, ID = –1.5 A
VDS = –0.8 V, ID = –1.5 A
-0.6
–0.8
35
mΩ
mΩ
mΩ
S
RDS(on)
Drain-to-source on-resistance
22
26.5
19.4
16.2
14
gfs
Transconductance
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
Qg
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total (–4.5 V)
Gate charge gate-to-drain
Gate charge gate-to-source
Gate charge at Vth
Output charge
703
391
133
4.9
0.6
1.3
0.6
1.9
14
914
508
172
6.3
pF
pF
pF
nC
nC
nC
nC
nC
ns
VGS = 0 V, VDS = –4 V, ƒ = 1 MHz
Qgd
Qgs
Qg(th)
QOSS
td(on)
tr
VDS = –4 V, ID = –1.5 A
VDS = –4 V, VGS = 0 V
Turnon delay time
Rise time
12
ns
VDS = –4 V, VGS = –4.5 V, ID = –1.5 A
RG = 10 Ω
td(off)
tf
Turnoff delay time
Fall time
58
ns
27
ns
DIODE CHARACTERISTICS
VSD
Qrr
trr
Diode forward voltage
Reverse recovery charge
Reverse recovery time
IS = –1.5 A, VGS = 0 V
–0.75
6.1
–1
V
nC
ns
VDS= –4.7 V, IF = –1.5 A
di/dt = 100 A/μs
21
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
Junction-to-ambient thermal resistance(1)
Junction-to-ambient thermal resistance(2)
MIN
TYP
170
55
MAX UNIT
RθJA
°C/W
(1) Device mounted on FR4 material with minimum Cu mounting area.
(2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
Copyright © 2014–2016, Texas Instruments Incorporated
3
CSD23203W
ZHCSD48A –DECEMBER 2014–REVISED AUGUST 2016
www.ti.com.cn
P-Chan 1.0x1.5 CSP TTA MAX Rev1
P-Chan 1.0x1.5 CSP TTA MIN Rev1
Typ RθJA = 170°C/W
Typ RθJA = 55°C/W
when mounted on
minimum pad area of
2-oz Cu.
when mounted on
1 in2 of 2-oz Cu.
M0155-01
M0156-01
5.3 Typical MOSFET Characteristics
TA = 25°C (unless otherwise stated)
Figure 1. Transient Thermal Impedance
SPACE
4
Copyright © 2014–2016, Texas Instruments Incorporated
CSD23203W
www.ti.com.cn
ZHCSD48A –DECEMBER 2014–REVISED AUGUST 2016
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
10
10
8
TC = 125°C
TC = 25°C
TC = -55°C
9
8
7
6
5
4
3
6
4
2
2
VGS = -1.8 V
VGS = -2.5 V
VGS = -4.5 V
1
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
-VDS - Drain-to-Source Voltage (V)
-VGS - Gate-To-Source Voltage (V)
D002
D003
VDS = –5 V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
1000
900
800
700
600
500
400
300
200
100
0
5
4
3
2
1
0
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
Qg - Gate Charge (nC)
-VDS - Drain-to-Source Voltage (V)
D004
D005
ID = –1.5 A
VDS = –4 V
Figure 4. Gate Charge
Figure 5. Capacitance
60
50
40
30
20
10
1.1
1
TC = 25°C, I D = -1.5 A
TC = 125°C, I D = -1.5 A
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0
0
-75 -50 -25
0
25
50
75 100 125 150 175
1
2
3
4
5
6
TC - Case Temperature (èC)
-VGS - Gate-To-Source Voltage (V)
D006
D007
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Copyright © 2014–2016, Texas Instruments Incorporated
5
CSD23203W
ZHCSD48A –DECEMBER 2014–REVISED AUGUST 2016
www.ti.com.cn
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
10
1
1.4
TC = 25èC
TC = 125èC
VGS = -2.5 V
VGS = -4.5 V
1.3
1.2
1.1
1
0.1
0.01
0.001
0.0001
0.9
0.8
0.7
-75 -50 -25
0
25
50
75 100 125 150 175
0
0.2
0.4
0.6
0.8
1
TC - Case Temperature (èC)
-VSD - Source-To-Drain Voltage (V)
D008
D009
ID = –1.5 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
100
3.5
3
2.5
2
10
1
1.5
1
0.5
0
100 ms
10 ms
1 ms
0.1
0.1
1
10
-50 -25
0
25
50
75 100 125 150 175 200
-VDS - Drain-To-Source Voltage (V)
TC - Case Temperature (èC)
D010
D011
Single Pulse, Typical RθJA = 170°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Maximum Drain Current vs Temperature
6
版权 © 2014–2016, Texas Instruments Incorporated
CSD23203W
www.ti.com.cn
ZHCSD48A –DECEMBER 2014–REVISED AUGUST 2016
6 器件和文档支持
6.1 接收文档更新通知
要接收文档更新通知，请导航至德州仪器 TI.com.cn 上的器件产品文件夹。请单击右上角的通知我 进行注册，即可
收到任意产品信息更改每周摘要。有关更改的详细信息，请查看任意已修订文档中包含的修订历史记录。
6.2 社区资源
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范，
并且不一定反映 TI 的观点；请参阅 TI 的 《使用条款》。
TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在
e2e.ti.com 中，您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。
设计支持
TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。
6.3 商标
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
6.4 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损
伤。
6.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
版权 © 2014–2016, Texas Instruments Incorporated
7
CSD23203W
ZHCSD48A –DECEMBER 2014–REVISED AUGUST 2016
www.ti.com.cn
7 机械、封装和可订购信息
以下页面包括机械、封装和可订购信息。这些信息是指定器件的最新可用数据。这些数据发生变化时，我们可能不
会另行通知或修订此文档。如欲获取此产品说明书的浏览器版本，请参阅左侧的导航栏。
7.1 CSD23203W 封装尺寸
NOTE: 全部尺寸单位为 mm（除非另外注明）。
表 1. 引脚分配
位置
C1，C2
A1
名称
漏极
栅极
源极
A2，B1，B2
8
版权 © 2014–2016, Texas Instruments Incorporated
CSD23203W
www.ti.com.cn
ZHCSD48A –DECEMBER 2014–REVISED AUGUST 2016
7.2 焊盘布局建议
Ø 0.25
1
2
A
B
C
0.50
M0158-01
NOTE: 全部尺寸单位为 mm（除非另外注明）。
7.3 卷带封装信息
4.00 0.10
2.00 0.0ꢀ
Ø 1.ꢀ0 0.10
2° Max
+0.0ꢀ
4.00 0.10
Ø 0.60
–0.10
0.86 0.0ꢀ
0.2ꢀ4 0.02
2° Max
1.19 0.0ꢀ
M01ꢀ9-01
NOTE: 全部尺寸单位为 mm（除非另外注明）。
版权 © 2014–2016, Texas Instruments Incorporated
9
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
CSD23203W
ACTIVE
ACTIVE
DSBGA
DSBGA
YZC
YZC
6
6
3000 RoHS & Green
250 RoHS & Green
SNAGCU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
23203
23203
CSD23203WT
SNAGCU
-55 to 150
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
重要声明和免责声明
TI 均以“原样”提供技术性及可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资
源，不保证其中不含任何瑕疵，且不做任何明示或暗示的担保，包括但不限于对适销性、适合某特定用途或不侵犯任何第三方知识产权的暗示
担保。
所述资源可供专业开发人员应用TI 产品进行设计使用。您将对以下行为独自承担全部责任：(1) 针对您的应用选择合适的TI 产品；(2) 设计、
验证并测试您的应用；(3) 确保您的应用满足相应标准以及任何其他安全、安保或其他要求。所述资源如有变更，恕不另行通知。TI 对您使用
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