LM747 [TI]
双路、44V、1.5MHz 运算放大器;型号: | LM747 |
厂家: | TEXAS INSTRUMENTS |
描述: | 双路、44V、1.5MHz 运算放大器 放大器 运算放大器 |
文件: | 总10页 (文件大小:200K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LM747
LM747 Dual Operational Amplifier
Literature Number: SNOS661
November 1994
LM747
Dual Operational Amplifier
General Description
Features
Y
No frequency compensation required
The LM747 is a general purpose dual operational amplifier.
The two amplifiers share a common bias network and power
supply leads. Otherwise, their operation is completely inde-
pendent.
Y
Short-circuit protection
Y
Wide common-mode and differential voltage ranges
Low power consumption
Y
Y
Y
Additional features of the LM747 are: no latch-up when in-
put common mode range is exceeded, freedom from oscilla-
tions, and package flexibility.
No latch-up
Balanced offset null
The LM747C/LM747E is identical to the LM747/LM747A
except that the LM747C/LM747E has its specifications
a
guaranteed over the temperature range from 0 C to 70 C
§
§
b
a
instead of 55 C to 125 C.
§
§
Connection Diagrams
Metal Can Package
Dual-In-Line Package
TL/H/11479–5
TL/H/11479–4
Order Number LM747CN or LM747EN
See NS Package Number N14A
Order Number LM747H
See NS Package Number H10C
*VaA and VaB are internally connected.
C
1995 National Semiconductor Corporation
TL/H/11479
RRD-B30M115/Printed in U. S. A.
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
g
Input Voltage (Note 2)
15V
Output Short-Circuit Duration
Indefinite
Operating Temperature Range
LM747/LM747A
LM747C/LM747E
Supply Voltage
LM747/LM747A
LM747C/LM747E
b
b
a
55 C to 125 C
§
§
0 C to 70 C
g
g
22V
18V
a
§
65 C to 150 C
§
§
§
a
Storage Temperature Range
§
Power Dissipation (Note 1)
Differential Input Voltage
800 mW
Lead Temperature (Soldering, 10 sec.)
300 C
g
30V
Electrical Characteristics (Note 3)
LM747A/LM747E
LM747
LM747C
Typ Max
Parameter
Conditions
Units
Min
Typ
Max
Min
Typ Max Min
e
s
s
Input Offset Voltage
T
25 C
§
A
R
R
10 kX
1.0
5.0
6.0
2.0
6.0
7.5
S
S
mV
mV
50X
0.8
3.0
4.0
s
s
R
R
50X
S
10 kX
S
Average Input Offset
Voltage Drift
15
mV/ C
§
e
e
e
g
Input Offset Voltage
Adjustment Range
T
25 C, V
§
20V
A
S
g
g
g
15
10
15
mV
nA
Input Offset Current
T
A
25 C
§
3.0
30
70
20
85
200
500
20
200
300
Average Input Offset
Current Drift
0.5
nA/ C
§
e
Input Bias Current
T
T
25 C
§
30
80
80
500
1.5
80
500
0.8
nA
A
s
s
T
T
0.210
mA
AMIN
A
AMAX
e
e
g
Input Resistance
T
25 C, V
§
20V
1.0
0.5
6.0
0.3
2.0
0.3
2.0
A
S
MX
e
g
V
T
20V
S
e
g
g
13
Input Voltage Range
25 C
§
12
A
V
g
g
g
g
13
12
13
12
t
e
e
Large Signal
Voltage Gain
T
25 C, R
§
20V, V
2 kX
A
L
e
g
g
V
15V
50
V/mV
V/mV
S
S
O
e
t
e
g
g
V
15V, V
10V
50
200
20
15
200
O
R
2 kX
L
S
S
S
S
e
e
e
e
e
g
g
g
g
g
g
V
V
V
V
20V, V
15V
10V
32
10
V/mV
V/mV
V/mV
O
O
15V, V
25
e
g
5V, V
20V
2V
O
e
t
t
Output Voltage Swing
g
R
R
10 kX
2 kX
16
15
L
V
g
L
e
t
t
g
V
15V
S
g
g
g
g
g
g
R
R
10 kX
2 kX
12
10
14
13
12
10
14
13
L
L
V
g
g
e
Output Short
T
25 C
§
10
25
35
40
25
25
A
mA
dB
Circuit Current
10
s
s
e
e
g
g
Common-Mode
Rejection Ratio
R
10 kX, V
50 kX, V
12V
12V
70
90
70
90
S
CM
R
80
95
2
S
CM
Electrical Characteristics (Note 3) (Continued)
LM747A/LM747E
LM747
Typ
LM747C
Typ
Parameter
Conditions
Units
Min
Typ
Max
Min
Max
Min
Max
e
s
s
e
g
g
Supply Voltage
V
20V to V
5V
S
S
Rejection Ratio
R
R
50X
10 kX
86
96
S
S
dB
77
96
77
96
e
Transient Response
Rise Time
T
A
25 C, Unity Gain
§
0.25
6.0
0.8
20
0.3
5
0.3
5
ms
Overshoot
%
e
e
e
Bandwidth (Note 4)
Slew Rate
T
T
T
T
25 C
§
0.437
0.3
1.5
0.7
MHz
V/ms
mA
A
A
A
A
25 C, Unity Gain
§
0.5
1.7
0.5
1.7
Supply Current/Amp
Power Consumption/Amp
25 C
§
2.5
2.8
85
2.8
85
e
e
e
25 C
§
g
g
V
V
20V
15V
80
150
S
mW
50
50
S
e
e
e
g
LM747A
LM747E
LM747
V
20V
S
A
A
T
T
T
T
165
135
AMIN
mW
mW
AMAX
e
e
e
g
V
20V
150
150
150
S
A
A
T
T
T
T
AMIN
AMAX
e
e
e
g
V
15V
S
A
A
T
T
T
T
60
45
100
75
AMIN
mW
AMAX
Note 1: The maximum junction temperature of the LM747C/LM747E is 100 C. For operating at elevated temperatures, devies in the TO-5 package must be
§
derated based on a thermal resistance of 150 C/W, junction to ambient, or 45 C/W, junction to case. The thermal resistance of the dual-in-line package is 100 C/
§
§
§
W, junction to ambient.
g
Note 2: For supply voltages less than 15V, the absolute maximum input voltage is equal to the supply voltage.
s
s
s
b
s
s
s
s
T
A
b
g
Note 3: These specifications apply for 5V
specified. The LM747 and LM747C are specified for V
g
20V and 55 C
V
T
125 C for the LM747A and 0 C
§
A
70 C for the LM747E unless otherwise
§
§
15V and 55 C
§
S
A
s
s
s
e
g
T
125 C and 0 C
§
T
A
70 C, respectively, unless otherwise specified.
§
§
§
S
Note 4: Calculated value from: 0.35/Rise Time (ms).
Schematic Diagram (Each Amplifier)
TL/H/11479–1
Note: Numbers in parentheses are pin numbers for amplifier B. DIP only.
3
Typical Performance Characteristics
Input Bias and Offset
Currents vs Ambient
Temperature
DC Parameters
vs Supply Voltage
Common Mode Rejection
Ratio vs Frequency
TL/H/11479–2
4
Typical Performance Characteristics (Continued)
Input Resistance and
Input Capacitance
vs Frequency
Broadband Noise for
Various Bandwidths
TL/H/11479–3
5
6
Physical Dimensions inches (millimeters)
Metal Can Package (H)
Order Number LM747H
NS Package Number H10C
7
Physical Dimensions inches (millimeters) (Continued)
Dual-In-Line Package (N)
Order Number LM747CN or LM747EN
NS Package Number N14A
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