LME49722MAX/NOPB [TI]
High Performance, High Fidelity Dual Audio Operational Amplifier;
| 型号： | LME49722MAX/NOPB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | High Performance, High Fidelity Dual Audio Operational Amplifier |
| 文件： | 总13页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LME49722
www.ti.com
SNAS454 –MARCH 2008
LME49722 Low Noise, High Performance, High Fidelity Dual Audio Operational Amplifier
Check for Samples: LME49722
1
FEATURES
DESCRIPTION
The LME49722 is part of the ultra-low distortion, low
noise, high slew rate operational amplifier series
optimized and fully specified for high performance,
high fidelity applications. Combining advanced
leading-edge process technology with state-of-the-art
circuit design, the LME49722 audio operational
amplifiers deliver superior audio signal amplification
for outstanding audio performance. The LME49722
combines extremely low voltage noise density
(1.9nV/√Hz) rate with vanishingly low THD+N
(0.00002%) to easily satisfy the most demanding
audio applications. To ensure that the most
challenging loads are driven without compromise, the
LME49722 has a high slew rate of ±22V/µs and an
output current capability of ±28mA. Further, dynamic
range is maximized by an output stage that drives
2kΩ loads to within 1V of either power supply voltage.
2
•
Easily Drives 600Ω Loads
•
•
•
Optimized for Superior Audio Signal Fidelity
Output Short Circuit Protection
PSRR and CMRR Exceed 120dB (typ)
APPLICATIONS
•
•
Ultra High Quality Audio Amplification
High Fidelity Preamplifiers, Phono Preamps,
and Multimedia
•
•
High Performance Professional Audio
High Fidelity Equalization and Crossover
Networks with Active Filters
•
•
High Performance Line Drivers and Receivers
Low Noise Industrial Applications Including
Test, Measurement, and Ultrasound
The LME49722 has a wide supply range of ±2.5V to
±18V. Over this supply range the LME49722
maintains excellent common-mode and power supply
rejection, and low input bias current. This Audio
Operational Amplifier achieves outstanding AC
performance while driving complex loads with values
as high as 100pF with gain value greater than 2.
Directly interchangeable with LME49720, LM4562
and LME49860 for similar operating voltages.
Table 1. KEY SPECIFICATIONS
VALUE
UNIT
±2.5V to
±18
Wide Operating Voltage Range
V
nV/√Hz
(typ)
Equivalent Noise
Equivalent Noise
(Frequency = 1kHz)
(Frequency = 10Hz)
1.9
2.8
nV/√Hz
(typ)
PSRR
120
dB (typ)
V/μs (typ)
% (typ)
Slew Rate
±22
RL = 2kΩ
0.00002
0.00002
135
THD+N
(AV = 1, VOUT = 3VRMS, fIN = 1kHz)
RL = 600Ω
% (typ)
Open Loop Gain (RL = 600Ω)
Input Bias Current
dB (typ)
nA (typ)
mV (typ)
50
Voltage Offset
±0.02
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008, Texas Instruments Incorporated
LME49722
SNAS454 –MARCH 2008
www.ti.com
Typical Application
C2
R2
V
P-P
R1
-
LME49722
+
C1
f
= > 300 kHz for V
= 20V, R2 C2 ö R1 C1
P-P
MAX
Figure 1. Wide Bandwidth Low Noise Low Drift Amplifier
Connection Diagram
1
2
3
4
8
7
6
5
+
OUTPUT A
V
INVERTING INPUT A
OUTPUT B
A
B
-
+
+
-
NON-INVERTING
INPUT A
INVERTING INPUT B
NON-INVERTING
INPUT B
-
V
Figure 2. 8-Lead SOIC
See D Package
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
(1)(2)(3)
Absolute Maximum Ratings
Supply Voltage (VS = VCC-VEE
Storage Temperature
Input Voltage
Output Short Circuit(4)
ESD Susceptibility(5)
ESD Susceptibility(6)
)
38V
−65°C to 150°C
(V-) - 0.7V to (V+) + 0.7V
Continuous
2000V
200V
Junction Temperature (TJMAX
)
150°C
Thermal Resistance
θJA
θJC
154°C/W
27°C/W
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
(2) The Electrical Characteristics tables list specifications under the listed Recommended Operating Conditions except as otherwise
modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not
ensured.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(4) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature,
TA. The maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given inAbsolute Maximum Ratings,
whichever is lower. For the LME49722, TJMAX = 150°C and the typical θJC is 27°C/W.
(5) Human body model, applicable std. JESD22-A114C.
(6) Machine model, applicable std. JESD22-A115-A.
Operating Ratings
Temperature Range
TMIN ≤ TA ≤ TMAX
−40°C ≤ TA ≤ 85°C
±2.5V ≤ VS ≤ ±18V
Supply Voltage Range
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(1)(2)
Electrical Characteristics for the LME49722
The following specifications apply for VS = ±15V and ±18V, RL = 2kΩ, fIN = 1kHz unless otherwise specified. Limits apply for
TA = 25°C,
LME49722
Units
(Limits)
Symbol
Parameter
Conditions
AV = 1, VOUT = 3Vrms
(3)
(4)
Typical
Limit
THD+N
IMD
Total Harmonic Distortion + Noise
Intermodulation Distortion
RL = 2kΩ
RL = 600Ω
0.00002
0.00002
%
0.00009
% (max)
AV = 1, VOUT = 3VRMS
Two-tone, 60Hz & 7kHz 4:1
0.00002
%
GBWP
SR
Gain Bandwidth Product
Slew Rate
fIN = 100kHz
55
45
MHz (min)
AV = 1, VOUT = 10VP-P
±22
±15
V/μs (min)
VOUT = 1VP-P, –3dB
referenced to output magnitude
at f = 1kHz
FPBW
Full Power Bandwidth
12
MHz
AV = –1, 10V step, CL = 100pF
0.1% error range
ts
Settling time
1.2
μs
eINV
Equivalent Input Voltage Noise
fBW = 20Hz to 20kHz
0.25
0.35
2.5
μVRMS (max)
f= 1kHz
VS = ±15V
VS = ±18V
1.9
1.9
nV√Hz
nV√Hz (max)
eN
Equivalent Input Voltage Density
f = 10Hz
VS = ±15V
VS = ±18V
2.8
3.2
nV√Hz
nV√Hz
f = 1kHz
f = 10Hz
2.6
6
pA/√Hz
pA/√Hz
In
Current Noise Density
VOS
Offset Voltage
VCM = 0V
ΔVS = 20V(5)
±0.02
120
±0.7
110
mV (max)
dB (min)
PSRR
Power Supply Rejection Ratio
fIN = 1kHz
fIN = 20kHz
136
135
dB
dB
ISOCH-CH Channel-to-Channel Isolation
VCM = 0V
VS = ±15V
VS = ±18V
IB
Input Bias Current
50
53
nA
nA (max)
200
ΔIOS/ΔTe Input Bias Current Drift vs
–40°C ≤ TA ≤ 85°C
0.1
nA/°C
mp
IOS
Temperature
VCM = 0V
VS = ±15V
VS = ±18V
Input Offset Current
25
32
nA
nA (max)
100
+14.0
–13.9
(VCC) – 2.0
(VEE) + 2.0
V (min)
V (min)
VS = ±15V
VIN-CM
Common-Mode Input Voltage Range
+17.0
–16.9
(VCC) – 2.0
(VEE) + 2.0
V (min)
V (min)
VS = ±18V
CMRR
ZIN
Common-Mode Rejection
–10V ≤ VCM ≤ 10V
128
30
110
120
dB (min)
kΩ
Differential Input Impedance
Common Mode Input Impedance
ZCM
–10V ≤ VCM ≤ 10V
1000
MΩ
–12V ≤ VOUT ≤ 12V, RL = 600Ω
–12V ≤ VOUT ≤ 12V, RL = 2kΩ
–12V ≤ VOUT ≤ 12V, RL = 10kΩ
135
140
140
dB
dB
dB
AVOL
Open Loop Voltage Gain
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
(2) The Electrical Characteristics tables list specifications under the listed Recommended Operating Conditions except as otherwise
modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not
ensured.
(3) Typical values represent most likely parametric norms at TA = +25°C, and at the Recommended Operation Conditions at the time of
product characterization and are not ensured.
(4) Datasheet min/max specification limits are specified by test or statistical analysis.
(5) PSRR is measured as follow: VOS is measured at two supply voltages, ±5V and ±15V. PSRR = | 20log(ΔVOS/ΔVS) |.
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Electrical Characteristics for the LME49722 (1)(2) (continued)
The following specifications apply for VS = ±15V and ±18V, RL = 2kΩ, fIN = 1kHz unless otherwise specified. Limits apply for
TA = 25°C,
LME49722
Units
(Limits)
Symbol
Parameter
Conditions
(3)
(4)
Typical
Limit
VS = ±15V
RL = 600Ω
RL = 2kΩ
+13.7/–14
±14.0
±14.1
VPEAK
VPEAK
VPEAK
RL = 10kΩ
VOM
Output Voltage Swing
VS = ±18V
RL = 600Ω
RL = 2kΩ
+16.6/–16.8
±17.0
VPEAK (min)
VPEAK
±15.5
RL = 10kΩ
±17.1
VPEAK
RL = 600Ω
VS = ±15V
VS = ±18V
IOUT
Output Current
±23
±27.6/–28
mA
mA (min)
±23
+43
–40
mA
mA
IOUT-CC
Short Circuit Current
Output Impedance
Sink to Source
fIN = 10kHz
Closed-Loop
Open-Loop
ZOUT
0.01
13
Ω
Ω
IOUT = 0mA
VS = ±15V
VS = ±18V
Total Quiescent Power Supply
Current
IS
12.1
12.3
mA
mA (max)
16
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Typical Performance Characteristics
THD+N
vs
THD+N
vs
Output Voltage
Output Voltage
+VCC = –VEE = 15V, fIN = 1kHz, RL = 2kΩ
+VCC = –VEE = 15V, fIN = 1kHz, RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
10m
100m
1
10
20
10m
100m
1
10
20
V
RMS
V
RMS
Figure 3.
Figure 4.
THD+N
vs
THD+N
vs
Output Voltage
Output Voltage
+VCC = –VEE = 18V, fIN = 1kHz, RL = 2kΩ
+VCC = –VEE = 18V, fIN = 1kHz, RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
10m
100m
1
10
20
10m
100m
1
10
20
V
RMS
V
RMS
Figure 5.
Figure 6.
THD+N
vs
THD+N
vs
Frequency
Frequency
+VCC = –VEE = 15V, VO = 3VRMS, RL = 2kΩ
+VCC = –VEE = 15V, VO = 3VRMS, RL = 600Ω
0.001
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
20
50
200 500 1k 2k
100
5k 10k
20k
20
50 100 200 500 1k 2k 5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 7.
Figure 8.
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Typical Performance Characteristics (continued)
THD+N
THD+N
vs
vs
Frequency
+VCC = –VEE = 18V, VO = 3VRMS, RL = 2kΩ
0.001
Frequency
+VCC = –VEE = 18V, VO = 3VRMS, RL = 600Ω
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
20
50
200 500 1k 2k
20k
20
100
5k 10k
50 100 200 500 1k 2k 5k 10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 9.
Figure 10.
IMD
vs
IMD
vs
Frequency
Frequency
+VCC = –VEE = 15V, RL = 2kΩ
+VCC = –VEE = 15V, RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
100m
500m
1
5
10
20
100m
500m
1
5
10
20
V
RMS
V
RMS
Figure 11.
Figure 12.
IMD
vs
IMD
vs
Frequency
Frequency
+VCC = –VEE = 18V, RL = 2kΩ
+VCC = –VEE = 18V, RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
100m
500m
1
5
10
20
100m
500m
1
5
10
20
V
RM
S
V
RMS
Figure 13.
Figure 14.
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Typical Performance Characteristics (continued)
IMD
vs
IMD
vs
Frequency
Frequency
+VCC = –VEE = 2.5V, RL = 600Ω
+VCC = –VEE = 2.5V, RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
100m
500m
1
2
100m
500m
1
2
V
RMS
V
RMS
Figure 15.
Figure 16.
Voltage Noise Density
vs
Voltage Noise Density
vs
Frequency
Frequency
+VCC = –VEE = 15V
+VCC = –VEE = 18V
100
10
1
100
10
1
V
V
= 30V
S
V
V
= 36V
S
= 15V
CM
= 18V
CM
1.84 nV/µHz
1.80 nV/µHz
1
10
100
1k
10k
100k
1
10
100
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 17.
Figure 18.
Current Noise Density
vs
Current Noise Density
vs
Frequency
Frequency
+VCC = –VEE = 15V
+VCC = –VEE = 18V
100
100
V
= 36V
V = 18V
CM
V
S
= 30V
= 15V
S
V
CM
10
10
2.4 pA/µHz
2.4 pA/µHz
1
1
1
10
100
1k
10k
100k
1
10
100
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 19.
Figure 20.
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Typical Performance Characteristics (continued)
PSRR+
vs
PSRR-
vs
Frequency
Frequency
+VCC = –VEE = 15V, VRIPPLE = 200mVPP, RL = 2kΩ
+VCC = –VEE = 15V, VRIPPLE = 200mVPP, RL = 2kΩ
-40
-40
-50
-60
-50
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-130
-140
-100
-110
-120
-130
-140
100
20
1k
10k 20k
100
20
1k
10k 20k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 21.
Figure 22.
Crosstalk
vs
CMRR
vs
Frequency
Frequency
+VCC = –VEE = 15V, RL = 2kΩ, VOUT = 3VRMS
+VCC = –VEE = 15V, RL = 2kΩ
0
-50
0
-50
-100
-150
-100
-150
20
100
1k
10k
100k
20
100
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 23.
Figure 24.
Output Voltage
vs
Output Voltage
vs
Supply Voltage
Supply Voltage
THD+N = 1%, RL = 2kΩ
THD+N = 1%, RL = 600Ω
12
14
12
10
8
10
8
6
6
4
4
2
2
0
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 25.
Figure 26.
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Typical Performance Characteristics (continued)
Supply Current
Full Power Bandwidth
vs
vs
Supply Voltage
RL = 2kΩ
Frequency
+VCC = –VEE = 15V, RL = 2kΩ
13.0
12.5
12.0
11.5
11.0
10.5
0
-10
-20
-30
-40
-50
0 dB = 1V
PP
10.0
0
2
4
6
8
10 12 14 16 18 20
1
10 100 1k 10k 100k 1M
100M
10M
FREQUENCY (Hz)
SUPPLY VOLTAGE (V)
Figure 27.
Figure 28.
Gain Phase
vs
Frequency
+VCC = –VEE = 15V
180
180
160
140
120
100
80
160
140
120
100
80
60
60
40
40
20
20
0
0
-20
-20
10
100M
10k 100k 1M 10M
100
1k
FREQUENCY (Hz)
Figure 29.
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APPLICATION INFORMATION
APPLICATION HINTS
The LME49722 is a high speed operational amplifier which can operate stably in most of the applications. For the
application with gain greater than 2, capacitive loads up to 100pF will cause little change in the phase
characteristics of the amplifiers and are therefore allowable. Capacitive loads greater than 10pF must be isolated
from the output, if the gain value is less than 2. The most straightforward way to do this is to put a resistor (its
value ≥ 20Ω ) in series with the output. The resistor will also prevent unnecessary power dissipation if the output
is accidentally shorted.
R1
470W
R3
150 kW
-
LOW IMPEDANCE
MICROPHONE
½ LME49722
+
C1
4.7 mF
R7
100W
R6
10 kW
R2
470W
R4
150 kW
OUTPUT
2
2
2
2
2
2
ñ
ñ
Total voltage noise density: e
ö e + e
+ e
= 1.9 + 2 (2.7 ),
N_total
N
N_R1
N_R2
then e
= 4.3 nV/µHz. For e
= e
ö 2.7 nV/µHz, if R1 = R2 ö 470W.
N_R2
N_total
N_R1
Or total voltage noise = 0.13 mV input referred in a 1 kHz noise bandwidth.
Figure 30. Low Impedance Microphone Pre-amplifier
0.05 mF
-
11 kW
3.6 kW
1.8 kW
11 kW
100 kW
10 mF
½ LME49722
INPUT
+
0.005 mF
11 kW
10 kW
3.6 kW
1.8 kW
100 kW
0.022 mF
500 kW
-
0.005 mF
OUTPUT
½ LME49722
+
Figure 31. Three-Band Active Tone Control
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REVISION HISTORY
Rev
Date
Description
1.0
03/27/08
Initial release.
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changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
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supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
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