LMH9126IRRLR [TI]
具有集成平衡-非平衡变压器的 2.3-2.9GHz 差分至单端低功耗放大器 | RRL | 12 | -40 to 105;
| 型号： | LMH9126IRRLR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有集成平衡-非平衡变压器的 2.3-2.9GHz 差分至单端低功耗放大器 | RRL | 12 | -40 to 105 变压器 放大器 |
| 文件： | 总23页 (文件大小：1286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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LMH9126
SNLS634 –JUNE 2020
LMH9126 2.3–2.9-GHz Differential to Single-Ended Amplifier With Integrated Balun
1 Features
3 Description
The LMH9126 is high-performance, single-channel,
differential input to single-ended output transmit RF
gain block amplifier supporting 2.6-GHz center
frequency band. The device is well suited to support
requirements for the next generation 5G AAS or small
cell applications while driving the input of a power
amplifier (PA). The RF amplifier provides 18-dB
typical gain with good linearity performance of 35-
dBm output IP3, while maintaining less than 4-dB
noise figure across the whole 1-dB bandwidth. The
device is internally matched for 100-Ω differential
input impedance providing easy interface with an RF-
sampling or Zero-IF analog front-end (AFE) at the
input. Also, the device is internally matched for 50-Ω
single-ended output impedance required for easy
interface with a post-amplifier, SAW filter, or PA.
1
•
Single-Channel, Differential Input to Single-Ended
Output RF Gain Block Amplifier
•
•
•
•
•
18-dB Typical Gain Across the Band
3.5-dB Noise Figure
35-dBm OIP3
18-dBm Output P1dB
375-mW Power Consumption on 3.3-V Single
Supply
•
Up to 105°C TC Operating Temperature
2 Applications
•
•
•
•
•
•
Differential DAC Output Driver for GSPS DACs
Differential to Single-Ended Conversions
Balun Alternatives
Operating on a single 3.3-V supply, the device
consumes only 375 mW of active power making it
suitable for high-density 5G massive MIMO
applications. Also, the device is available in a space
saving 2-mm × 2-mm, 12-pin QFN package. The
device is rated for an operating temperature of up to
105°C to provide a robust system design. There is a
1.8-V JEDEC compliant power down pin available for
fast power down and power up of the device suitable
for time division duplex (TDD) systems.
Small Cell or m-MIMO Base Stations
5G Active Antenna Systems (AAS)
Wireless Cellular Base Station
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LMH9126
WQFN (12)
2.00 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
LMH9126: Differential to Single-Ended Amplifier
f = 2.3 GHz - 2.9 GHz
Analog Front-End
LMH9126
DAC
PA
ZIN = 100 Ω
ZOUT = 50 Ω
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMH9126
SNLS634 –JUNE 2020
www.ti.com
Table of Contents
7.4 Device Functional Modes........................................ 11
Application and Implementation ........................ 11
8.1 Application Information............................................ 11
8.2 Typical Application ................................................. 11
Power Supply Recommendations...................... 14
1
2
3
4
5
6
Features.................................................................. 1
8
Applications ........................................................... 1
Description ............................................................. 1
Revision History..................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 4
6.6 Typical Characteristics.............................................. 6
Detailed Description ............................................ 10
7.1 Overview ................................................................. 10
7.2 Functional Block Diagram ....................................... 10
7.3 Feature Description................................................. 10
9
10 Layout................................................................... 15
10.1 Layout Guidelines ................................................. 15
10.2 Layout Example .................................................... 15
11 Device and Documentation Support ................. 16
11.1 Documentation Support ........................................ 16
11.2 Receiving Notification of Documentation Updates 16
11.3 Support Resources ............................................... 16
11.4 Trademarks........................................................... 16
11.5 Electrostatic Discharge Caution............................ 16
11.6 Glossary................................................................ 16
7
12 Mechanical, Packaging, and Orderable
Information ........................................................... 16
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
DATE
REVISION
NOTES
June 2020
*
Initial Release
2
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5 Pin Configuration and Functions
RRL Package
12-Pin WQFN
Top View
NC VDD
11
12
VSS 1
INP 2
10 VSS
OUTP
9
8
7
Thermal Pad
3
INM
VSS 4
VSS
VSS
5
6
VSS
PD
Pin Functions
PIN
NAME
TYPE
DESCRIPTION
NO.
1
VSS
INP
Power
Input
Ground
RF differential positive input into amplifier
2
3
INM
VSS
VSS
PD
Power
Power
Power
Input
RF differential negative input into amplifier
4
Ground
Ground
5
6
Power down connection. PD = 0 V = normal operation; PD = 1.8 V = power off mode
7
VSS
VSS
OUTP
VSS
VDD
NC
Power
Output
Output
Power
Power
—
Ground
8
Ground
9
RF single-ended output from amplifier
Ground
10
11
Positive supply voltage (3.3 V)
Do not connect this pin
Connect the thermal pad to ground
12
Thermal Pad
—
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
MAX
3.6
UNIT
Supply voltage VDD
V
V
V
RF pins
INP, INM, OUTP
VDD
VDD
Digital input pin PD
Continuous
wave (CW)
input
T = 25 °C
18
dBm
TJ
Junction temperature
Storage temperature
150
150
°C
°C
Tstg
–65
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per
±1000
ANSI/ESDA/JEDEC JS-001, allpins(1)
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC
specificationJESD22-C101, all pins(2)
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
3.15
–40
–40
NOM
MAX
3.45
105
UNIT
V
VDD
TC
Supply voltage
3.3
Case (bottom) temperature
Junction temperature
°C
TJ
125
°C
6.4 Thermal Information
LMH9126
THERMAL(1)
RRL PKG
12-PIN WQFN
74.8
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
72.4
37.1
ΨJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
3.2
ΨJB
37.1
RθJC(bot)
14.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953
6.5 Electrical Characteristics
TA = 25°C, VDD = 3.3 V, frequency (fin) = 2.6 GHz, differential input impedance (ZIN) = 100 Ω, output load (ZLOAD) = 50
Ω (unless otherwise noted)
PARAMETER
RF PERFORMANCE
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fRF
RF frequency range
1-dB bandwidth
2300
2900
MHz
MHz
BW1dB
600
4
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Electrical Characteristics (continued)
TA = 25°C, VDD = 3.3 V, frequency (fin) = 2.6 GHz, differential input impedance (ZIN) = 100 Ω, output load (ZLOAD) = 50
Ω (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
18
MAX
UNIT
dB
S21
Gain
NF
Noise figure
Output P1dB
RS = 100 Ω differential
3.5
18
dB
OP1dB
ZLOAD = 50 Ω
dBm
fin = 2.6 GHz ± 5-MHz spacing,
POUT/TONE = 2 dBm
OIP3
Output IP3
36
dBm
Differential input gain imbalance
Differential input phase imbalance
±0.3
±4
dB
°
fin = 2.6 GHz, BW = 200 MHz
fin = 2.6 GHz, BW = 600 MHz
fin = 2.6 GHz, BW = 200 MHz
fin = 2.6 GHz, BW = 600 MHz
fin = 2.6 GHz, BW = 600 MHz
–15
–8
(1)
S11
S22
Input return loss
dB
dB
–10
–10
–35
30
(1)
Output return loss
S12
Reverse isolation
dB
dB
(2)
CMRR
Common mode rejection ratio
SWITCHING AND DIGITAL INPUT CHARACTERISTICS
tON
tOFF
VIH
VIL
Turn-ON time
50% VPD to 90% RF
50% VPD to 10% RF
PD pin
0.2
0.2
µs
µs
V
Turn-OFF time
High-level input voltage
Low-level input voltage
1.4
PD pin
0.5
V
DC CURRENT AND POWER CONSUMPTION
IVDD_ON
IVDD_PD
Pdis
Supply current - active
VPD = 0 V
114
10
mA
mA
mW
Supply current - power down
Power dissipation - active
VPD = 1.8 V
VDD = 3.3 V
375
(1) Reference impedance: Input = 100 Ω differential, Output = 50 Ω single-ended.
(2) CMRR is calculated using ( S12 – S13 ) / ( S12 + S13 ) for transmit (1 is output port, 2 & 3 are differential input ports).
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6.6 Typical Characteristics
at TA = 25°C, VDD = 3.3 V, differential input impedance (ZIN) = 100 Ω, single-ended output impedance (ZLOAD) = 50 Ω, and
POUT(TOTAL) = 8 dBm into ZLOAD = 50 Ω (unless otherwise noted)
20
18
16
14
12
10
20
18
16
14
12
10
TA = -40 oC
TA = 25 oC
TA = 85 oC
TA = 105 oC
VDD = 3.15V
VDD = 3.3V
VDD = 3.45V
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
POUT = 2 dBm
POUT = 2 dBm
Figure 1. Gain vs Frequency and Temperature
Figure 2. Gain vs Frequency and Supply Voltage
0
0
TA = -40 oC
TA = 25 oC
-2
-5
TA = 85 oC
TA = 105 oC
-4
-10
-6
-15
-20
-25
-30
-35
-40
-8
-10
-12
-14
-16
-18
-20
TA = -40 oC
TA = 25 oC
TA = 85 oC
TA = 105 oC
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
Figure 3. Input Return Loss vs Frequency
Figure 4. Output Return Loss vs Frequency
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Typical Characteristics (continued)
at TA = 25°C, VDD = 3.3 V, differential input impedance (ZIN) = 100 Ω, single-ended output impedance (ZLOAD) = 50 Ω, and
POUT(TOTAL) = 8 dBm into ZLOAD = 50 Ω (unless otherwise noted)
46
44
42
40
38
36
34
32
30
28
26
24
22
20
0
TA = -40 oC
TA = 25 oC
TA = 85 oC
TA = 105 oC
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
TA = -40 oC
TA = 25 oC
TA = 85 oC
TA = 105 oC
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
POUT/TONE = 2 dBm, 10-MHz tone spacing
Figure 5. Reverse Isolation vs Frequency
Figure 6. Output IP3 vs Frequency and Temperature
46
46
44
42
40
38
36
34
32
30
28
26
24
22
20
44
42
40
38
36
34
32
30
28
26
24
22
20
TA = -40 0C
TA = 25 0C
TA = 85 0C
TA = 105 0C
VDD = 3.15V
VDD = 3.3V
VDD = 3.45V
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
0
2
4
6
8
Output Power / Tone (dBm)
10
12
POUT/TONE = 2 dBm, 10-MHz tone spacing
f = 2.6 GHz, 10-MHz tone spacing
Figure 7. Output IP3 vs Frequency and Supply Voltage
Figure 8. Output IP3 vs Output Power per Tone
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Typical Characteristics (continued)
at TA = 25°C, VDD = 3.3 V, differential input impedance (ZIN) = 100 Ω, single-ended output impedance (ZLOAD) = 50 Ω, and
POUT(TOTAL) = 8 dBm into ZLOAD = 50 Ω (unless otherwise noted)
46
44
42
40
38
36
34
32
30
28
26
24
22
20
22
20
18
16
14
12
TA = -40 oC
TA = 25 oC
TA = 85 oC
TA = 105 oC
Tone Spacing = 1MHz
Tone Spacing = 10MHz
Tone Spacing = 100MHz
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
POUT/TONE = 2 dBm
Figure 9. Output IP3 vs Frequency and Tone Spacing
Figure 10. Output P1dB vs Frequency and Temperature
22
5
20
18
16
14
12
4
3
2
1
0
TA = -40 oC
TA = 25 oC
TA = 85 oC
TA = 105 oC
VDD = 3.15V
VDD = 3.3V
VDD = 3.45V
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
ZSOURCE = 100-Ω differential
Figure 11. Output P1dB vs Frequency and Supply Voltage
Figure 12. Noise Figure vs Frequency and Temperature
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Typical Characteristics (continued)
at TA = 25°C, VDD = 3.3 V, differential input impedance (ZIN) = 100 Ω, single-ended output impedance (ZLOAD) = 50 Ω, and
POUT(TOTAL) = 8 dBm into ZLOAD = 50 Ω (unless otherwise noted)
60
55
50
45
40
35
30
25
20
1
0.5
0
TA = -40 oC
TA = 25 oC
TA = 85 oC
TA = 105 oC
TA = -40 oC
TA = 25 oC
TA = 85 oC
TA = 105 oC
-0.5
-1
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
Figure 14. Gain Imbalance vs Frequency and Temperature
Figure 13. CMRR vs Frequency
4
TA = -40 oC
TA = 25 oC
3
TA = 85 oC
TA = 105 oC
2
1
0
-1
-2
-3
-4
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
Figure 15. Phase Imbalance vs Frequency and Temperature
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7 Detailed Description
7.1 Overview
The LMH9126 device is a differential input to single-ended output narrow-band RF amplifier that is used in
transmitter applications. The device provides 18-dB fixed power gain with excellent linearity and noise
performance across 1-dB bandwidth of the 2.6-GHz center frequency. The device is internally matched for 100-Ω
differential impedance at the input and 50-Ω impedance at the output, as shown in Figure 16.
The LMH9126 has on-chip active bias circuitry to maintain device performance over a wide temperature and
supply voltage range. The included power down (PD) function allows the amplifier to shut down. The PD function
is useful to save power when the amplifier is not needed and also allows to mute the transmitter when in receive
mode. Fast shut down and start up enable the amplifier to be used in a host of TDD applications.
Operating on a single 3.3-V supply and 114 mA of typical supply current, the devices are available in a 2-mm ×
2-mm 12-pin QFN package.
7.2 Functional Block Diagram
VDD
Active Bias and
Temperature
Compensation
Power Down (PD)
Balanced RF INP (0•)
Single-Ended RF Output (OUTP)
Balanced RF INM (180•)
LMH9126
Zout = 50 Ω
VSS (GND)
Zin (diff) = 100 Ω
Figure 16. Functional Block Diagram
7.3 Feature Description
The LMH9126 device is a differential to single-ended RF amplifier for narrow band active balun implementation.
The device integrates the functionality of a passive balun and a single-ended RF amplifier in traditional
transmitter applications achieving small form factor with comparable linearity and noise performance, as shown in
Figure 17.
The active balun implementation coupled with higher operating temperature of 105°C allows for more robust
system implementation compared to passive balun that is prone to reliability failures at high temperatures. The
robust operation is achieved by the on-chip active bias circuitry which maintains device performance over a wide
temperature and supply voltage range.
LMH9126
INP
OUTP
INM
GND
Figure 17. Differential Input to Single-Ended Output, Active Balun Implementation
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7.4 Device Functional Modes
The LMH9126 features a PD pin which should be connected to GND for normal operation. To power down the
device, connect the PD pin to a logic high voltage of 1.8 V.
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LMH9126 is a differential to single-ended RF gain block amplifier, which works as an active balun in the
transmit path of a 2.3-GHz to 2.8-GHz 5G, TDD m-MIMO or small cell base station. The device replaces the
traditional passive balun and single-ended RF amplifier offering a smaller footprint solution to the customer. TI
recommends following good RF layout and grounding techniques to maximize the device performance.
8.2 Typical Application
The LMH9126 is typically used in a four transmit and four receive (4T/4R) array of active antenna system for 5G,
TDD, wireless base station applications. Such a system is shown in Figure 18, where the LMH9126 is used in
the transmit path as an active balun that converts differential DAC output from Tx AFE to single-ended signal.
Also shown in the figure is the application of LMH9226 chip, which is the counter-part of LMH9126 in the Receive
path.
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Typical Application (continued)
Transceiver Board
LMH9226
LNA
DC-DC Converter
LDO
+3.3 V
LMH9226
LNA
+3.3 V
LMH9126
Tx AFE
Tx AFE
PA
f = 2.3 GHz œ 2.9 GHz
LMH9126
PA
PA
Analog Front End
LMH9126
LMH9126
fO
Tx AFE
Tx AFE
+3.3 V
PA
LNA
LMH9226
DC-DC Converter
LDO
+3.3 V
LNA
LMH9226
Figure 18. LMH9126 in a 4T/4R 5G Active Antenna System
The 4T/4R system can be scaled to 16T/16R, 64T/64R, or higher antenna arrays that result in proportional
scaling of the overall system power dissipation. As a result of the proportional scaling factor for multiple channels
in a system, the individual device power consumption must be reduced to dissipate less overall heat in the
system. Operating on a single 3.3-V supply, the LMH9126 consumes only 375 mW and therefore provides power
saving to the customer. Multiple LMH9126 devices can be powered from a single DC/DC converter or a low-
dropout regulator (LDO) operating on a 3.3-V supply. A DC/DC converter provides the most power efficient way
of generating the 3.3-V supply. However, care must be taken when using the DC/DC converter to minimize the
switching noise using inductor chokes and adequate isolation must be provided between the analog and digital
supplies.
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Typical Application (continued)
8.2.1 Design Requirements
Input of LMH9126 is matched to 100 Ω and therefore can be directly driven by a DAC that has 100 Ω termination
without any external matching network. If a DAC with different termination is used, then it should be appropriately
matched to get the best RF performance.
The example in Figure 19 shows how LMH9126 can be matched to a DAC that has 200-Ω differential
termination.
Vdd
C1
C2
INP
100 Ω
OUTP
L1
LMH9126
DAC
100 Ω
C2
INM
C1
Z = 100 Ω
Z = 200 Ω
Figure 19. LMH9126 Driven by a DAC With 200-Ω Termination
8.2.2 Detailed Design Procedure
A simple differential LC network is used here as the matching network. In Figure 19, shunt inductor L1 and series
capacitors C2 form the matching network. The series capacitors C1 act as the DC-blocking capacitors. Table 1
shows the matching network component values.
Table 1. Matching Network Component Values
COMPONENT
VALUE
12 pF
C1
L1
C2
10 nH
1.2 pF
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8.2.3 Application Curves
The graphs given below show the Gain, Input Return Loss, and Output Return Loss of the design with different
DAC terminations.
20
18
16
14
12
10
0
-5
-10
-15
-20
-25
-30
-35
-40
100 W without matching components
200 W with matching components
100 W without matching components
200 W with matching components
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
Figure 20. Gain vs Frequency for Different DAC
Terminations
Figure 21. Input Return Loss vs Frequency for Different
DAC Terminations
0
100 W without matching components
200 W with matching components
-5
-10
-15
-20
2200 2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
Figure 22. Output Return Loss vs Frequency for Different DAC Terminations
9 Power Supply Recommendations
The LMH9126 device operates on a single nominal 3.3-V supply voltage. It is recommended to isolate the supply
voltage through decoupling capacitors placed close to the device. Select capacitors with self-resonant frequency
above the application frequency. When multiple capacitors are used in parallel to create a broadband decoupling
network, place the capacitor with the higher self-resonant frequency closer to the device.
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10 Layout
10.1 Layout Guidelines
When designing with an RF amplifier operating in the frequency range 2 GHz to 3 GHz with relatively high gain,
certain board layout precautions must be taken to ensure stability and optimum performance. TI recommends
that the LMH9126 board be multi-layered to improve thermal performance, grounding, and power-supply
decoupling. Figure 23 shows a good layout example. In this figure, only the top signal layer is shown.
•
Excellent electrical connection from the thermal pad to the board ground is essential. Use the recommended
footprint, solder the pad to the board, and do not include a solder mask under the pad.
•
•
•
Connect the pad ground to the device terminal ground on the top board layer.
Ensure that ground planes on the top and any internal layers are well stitched with vias.
Design the two input and one output RF traces for 50-Ω impedance. TI recommends grounded coplanar
waveguide (GCPW) type transmission lines for the RF traces. Use a PCB trace width calculator tool to design
the transmission lines.
•
•
•
•
Avoid routing clocks and digital control lines near RF signal lines.
Do not route RF or DC signal lines over noisy power planes.
Place supply decoupling close to the device.
The differential output traces must be symmetrical in order to achieve the best differential balance and
linearity performance.
See the LMH9126 Evaluation Module user's guide for more details on board layout and design.
10.2 Layout Example
Figure 23. Layout Showing Matched Differential Traces and Supply Decoupling
Copyright © 2020, Texas Instruments Incorporated
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Product Folder Links: LMH9126
LMH9126
SNLS634 –JUNE 2020
www.ti.com
11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
•
Texas Instruments, LMH9126 Evaluation Module user's guide
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
16
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Copyright © 2020, Texas Instruments Incorporated
Product Folder Links: LMH9126
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
LMH9126IRRLR
ACTIVE
WQFN
RRL
12
3000 RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-40 to 105
12GO
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Jan-2021
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LMH9126IRRLR
WQFN
RRL
12
3000
180.0
8.4
2.2
2.2
1.2
4.0
8.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Jan-2021
*All dimensions are nominal
Device
Package Type Package Drawing Pins
WQFN RRL 12
SPQ
Length (mm) Width (mm) Height (mm)
213.0 191.0 35.0
LMH9126IRRLR
3000
Pack Materials-Page 2
PACKAGE OUTLINE
RRL0012A
WQFN - 0.8 mm max height
S
C
A
L
E
5
.
0
0
0
PLASTIC QUAD FLATPACK - NO LEAD
2.1
1.9
A
B
PIN 1 INDEX AREA
2.1
1.9
0.8
0.7
C
SEATING PLANE
0.08 C
0.05
0.00
2X 0.5
SYMM
EXPOSED
THERMAL PAD
(0.2) TYP
(0.3) TYP
7
5
6
4
2X 1.5
SYMM
13
0.8 0.1
8X 0.5
10
1
0.3
0.2
12X
12
11
PIN 1 ID
0.1
C A B
0.35
0.25
12X
0.05
4224942/A 04/2019
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
RRL0012A
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(
0.8)
SYMM
12
SEE SOLDER MASK
DETAIL
12X (0.5)
11
10
12X (0.25)
1
SYMM
(1.9)
13
8X (0.5)
(R0.05) TYP
4
7
(
0.2) TYP
VIA
6
5
(1.9)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 20X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
METAL UNDER
SOLDER MASK
METAL EDGE
EXPOSED METAL
SOLDER MASK
OPENING
EXPOSED
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4224942/A 04/2019
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
RRL0012A
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(
0.76)
11
12X (0.5)
12
12X (0.25)
10
1
SYMM
(1.9)
13
8X (0.5)
4
7
(R0.05) TYP
5
6
SYMM
(1.9)
SOLDER PASTE EXAMPLE
BASED ON 0.125 MM THICK STENCIL
SCALE: 20X
EXPOSED PAD 13
90% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
4224942/A 04/2019
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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