LMV1032UP-06 [TI]
Amplifiers for 3-Wire Analog Electret Microphones; 放大器3线模拟驻极体麦克风
| 型号： | LMV1032UP-06 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | Amplifiers for 3-Wire Analog Electret Microphones |
| 文件： | 总14页 (文件大小：840K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMV1032
LMV1032-06/LMV1032-15/LMV1032-25 Amplifiers for 3-Wire Analog Electret
Microphones
Literature Number: SNAS233F
November 2005
LMV1032-06/LMV1032-15/LMV1032-25
Amplifiers for 3-Wire Analog Electret Microphones
General Description
Features
The LMV1032s are an audio amplifier series for small form
factor electret microphones. They are designed to replace
the JFET preamp currently being used. The LMV1032 series
is ideal for extended battery life applications, such as a
Bluetooth communication link. The addition of a third pin to
an electret microphones that incorporates an LMV1032 al-
lows for a dramatic reduction in supply current as compared
to the JFET equipped electret microphone. Microphone sup-
ply current is thus reduced to 60 µA, assuring longer battery
life. The LMV1032 series is guaranteed for supply voltages
from 1.7V to 5V, and has fixed voltage gains of 6 dB, 15 dB
and 25 dB.
(Typical LMV1032-15, 1.7V Supply; Unless Otherwise
Noted)
n Output voltage noise (A-weighted)
n Low supply current
n Supply voltage
−89 dBV
60 µA
1.7V to 5V
70 dB
n PSRR
n Signal to noise ratio
n Input capacitance
n Input impedance
n Output impedance
n Max input signal
n Temperature range
61 dB
2 pF
>
100 MΩ
<
200Ω
170 mVPP
−40˚C to 85˚C
The LMV1032 series offers low output impedance over the
voice bandwidth, excellent power supply rejection (PSRR),
and stability over temperature.
n Large Dome 4-Bump micro SMD package with improved
adhesion technology.
The devices are offered in space saving 4-bump ultra thin
micro SMD (TM) lead free packages and are thus ideally
suited for the form factor of miniature electret microphone
packages. These extremely miniature packages have the
Large Dome Bump (LDB) technology. This micro SMD tech-
nology is designed for microphone PCBs requiring 1 kg
adhesion criteria.
Applications
n Mobile communications - Bluetooth
n Automotive accessories
n Cellular phones
n PDAs
n Accessory microphone products
Block Diagram
Electret Microphone
20084202
20084201
© 2005 National Semiconductor Corporation
DS200842
www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature Range
Junction Temperature (Note 6)
Mounting Temperature
−65˚C to 150˚C
150˚C max
Infrared or Convection (20 sec.)
235˚C
ESD Tolerance (Note 2)
Human Body Model
Machine Model
Supply Voltage
VDD - GND
2500V
250V
Operating Ratings (Note 1)
Supply Voltage
1.7V to 5V
Temperature Range
−40˚C to +85˚C
5.5V
1.7V and 5V Electrical Characteristics (Note 3)
Unless otherwise specified, all limits guaranteed for TJ = 25˚C and VDD = 1.7V and 5V. Boldface limits apply at the tempera-
ture extremes.
Min
(Note 4)
Typ
(Note 5)
60
Max
(Note 4)
85
Symbol
Parameter
Supply Current
Conditions
Units
IDD
VIN = GND
VDD = 1.7V
µA
100
SNR
Signal to Noise Ratio
LMV1032-06
LMV1032-15
LMV1032-25
LMV1032-06
LMV1036-15
LMV1032-25
LMV1032-06
58
61
61
59
61
62
75
VIN = 18 mVPP
f = 1 kHz
dB
VDD = 5V
VIN = 18 mVPP
f = 1 kHz
<
<
PSRR
Power Supply Rejection Ratio
1.7V VDD 5V
65
60
60
55
55
50
LMV1032-15
LMV1032-25
70
65
dB
VIN
Max Input Signal
f = 1 kHz and THD+N LMV1032-06
300
170
60
<
1%
LMV1032-15
LMV1032-25
mVPP
fLOW
fHIGH
Lower −3 dB Roll Off Frequency RSOURCE = 50Ω
VIN = 18 mVPP
70
Hz
Upper −3 dB Roll Off Frequency RSOURCE = 50Ω
VIN = 18 mVPP
LMV1032-06
LMV1032-15
LMV1032-25
LMV1032-06
LMV1032-15
LMV1032-25
LMV1032-06
LMV1032-15
LMV1032-25
120
75
kHz
21
en
Output Noise
A-Weighted
VIN = GND
f = 1 kHz
−97
−89
−80
300
500
600
dBV
VOUT
Output Voltage
100
250
300
500
750
mV
1000
<
RO
IO
Output Impedance
Output Current
200
Ω
VDD = 1.7V, VOUT = 1.7V, Sinking
VDD = 1.7V, VOUT = 0V, Sourcing
VDD = 5V, VOUT = 1.7V, Sinking
VDD = 5V, VOUT = 0V, Sourcing
0.9
0.5
0.3
0.2
0.9
0.5
0.4
0.1
2.3
0.64
2.4
mA
1.46
www.national.com
2
1.7V and 5V Electrical Characteristics (Note 3) (Continued)
Unless otherwise specified, all limits guaranteed for TJ = 25˚C and VDD = 1.7V and 5V. Boldface limits apply at the tempera-
ture extremes.
Min
(Note 4)
Typ
(Note 5)
0.11
0.13
0.35
2
Max
(Note 4)
Symbol
Parameter
Conditions
Units
THD
Total Harmonic Distortion
f = 1 kHz
LMV1032-06
LMV1032-15
LMV1032-25
VIN = 18 mVPP
%
CIN
ZIN
AV
Input Capacitance
Input Impedance
Gain
pF
>
6.2
100
MΩ
f = 1 kHz
LMV1032-06
LMV1032-15
LMV1032-25
5.5
4.5
6.7
7.7
16
VIN = 18 mVPP
14.8
14
15.4
25.5
dB
17
24.8
24
26.2
27
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: The Human Body Model (HBM) is 1.5 kΩ in series with 100 pF. The Machine Model is 0Ω in series with 200 pF.
Note 3: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
>
the device such that T = T . No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T
J
T .
J
A
A
Note 4: All limits are guaranteed by design or statistical analysis.
Note 5: Typical values represent the most likely parametric norm.
Note 6: The maximum power dissipation is a function of T
, θ and T . The maximum allowable power dissipation at any ambient temperature is P
=
D
J(MAX)
JA
A
(T
- T )/θ . All numbers apply for packages soldered directly onto a PC board.
J(MAX)
A JA
3
www.national.com
Connection Diagram
Large Dome 4-Bump micro SMD
20084203
Top View
Note: - Pin numbers are referenced to package marking text orientation.
- The actual physical placement of the package marking will vary slightly from part to part. The package will designate the date code and will vary considerably.
Package marking does not correlate to device type in any way.
Ordering Information
Package
Part Number
Package
Marking
Transport Media
NSC Drawing
Product Status
LMV1032UR-15
LMV1032URX-15
LMV1032UR-25
LMV1032URX-25
LMV1032UP-06
LMV1032UPX-06
LMV1032UP-15
LMV1032UPX-15
LMV1032UP-25
LMV1032UPX-25
250 Units Tape and Reel
3k Units Tape and Reel
250 Units Tape and Reel
3k Units Tape and Reel
250 Units Tape and Reel
250 Units Tape and Reel
250 Units Tape and Reel
3k Units Tape and Reel
250 Units Tape and Reel
3k Units Tape and Reel
4-Bump
Ultra Thin micro SMD
(LDB)
Date Code
Date Code
Date Code
Date Code
Date Code
Full Production
Full Production
Full Production
Life Time Buy
Life Time Buy
URA04JJA
Lead Free
4-Bump
Ultra Thin micro SMD
(Small Bump)
UPA04QQA
Lead Free
Note: The LMV1032 series is offered only with lead free (NOPB) solder bumps.
The LMV1032 series replaces the LMV1014.
www.national.com
4
Typical Performance Characteristics Unless otherwise specified, VS = 1.7V, single supply, TA
=
25˚C
Supply Current vs. Supply Voltage (LMV1032-06)
Supply Current vs. Supply Voltage (LMV1032-15)
20084204
20084213
Closed Loop Gain and Phase vs. Frequency
(LMV1032-06)
Supply Current vs. Supply Voltage (LMV1032-25)
20084205
20084214
Closed Loop Gain and Phase vs. Frequency
(LMV1032-15)
Closed Loop Gain and Phase vs. Frequency
(LMV1032-25)
20084216
20084215
5
www.national.com
Typical Performance Characteristics Unless otherwise specified, VS = 1.7V, single supply, TA
=
25˚C (Continued)
Power Supply Rejection Ratio vs. Frequency
(LMV1032-06)
Power Supply Rejection Ratio vs. Frequency
(LMV1032-15)
20084206
20084217
Power Supply Rejection Ratio vs. Frequency
(LMV1032-25)
Total Harmonic Distortion vs. Frequency (LMV1032-06)
20084207
20084218
Total Harmonic Distortion vs. Frequency (LMV1032-15)
Total Harmonic Distortion vs. Frequency (LMV1032-25)
20084219
20084220
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6
Typical Performance Characteristics Unless otherwise specified, VS = 1.7V, single supply, TA
=
25˚C (Continued)
Total Harmonic Distortion vs. Input Voltage
(LMV1032-06)
Total Harmonic Distortion vs. Input Voltage
(LMV1032-15)
20084208
20084221
Total Harmonic Distortion vs. Input Voltage
(LMV1032-25)
Output Voltage Noise vs. Frequency (LMV1032-06)
20084223
20084222
Output Voltage Noise vs. Frequency (LMV1032-15)
Output Voltage Noise vs. Frequency (LMV1032-25)
20084224
20084225
7
www.national.com
Application Section
MEASURING NOISE AND SNR
The overall noise of the LMV1032 is measured within the
frequency band from 10 Hz to 22 kHz using an A-weighted
filter. The input of the LMV1032 is connected to ground with
a 5 pF capacitor.
LOW CURRENT
The LMV1032 has a low supply current which allows for a
longer battery life. The low supply current of 60µA makes this
amplifier optimal for microphone applications which need to
be always on.
BUILT-IN GAIN
The LMV1032 is offered in the space saving small micro
SMD package which fits perfectly into the metal can of a
microphone. This allows the LMV1032 to be placed on the
PCB inside the microphone.
The bottom side of the PCB has the pins that connect the
supply voltage to the amplifier and make the output avail-
able. The input of the amplifier is connected to the micro-
phone via the PCB.
20084210
FIGURE 3. Noise Measurement Setup
The signal-to-noise ratio (SNR) is measured with a 1 kHz
input signal of 18 mVPP using an A-weighted filter. This
represents a sound pressure level of 94 dB SPL. No input
capacitor is connected.
SOUND PRESSURE LEVEL
The volume of sound applied to a microphone is usually
stated as the pressure level with respect to the threshold of
hearing of the human ear. The sound pressure level (SPL) in
decibels is defined by:
20084202
Sound pressure level (dB) = 20 log Pm/PO
Where,
FIGURE 1. Built-in Gain
Pm is the measured sound pressure
PO is the threshold of hearing (20µPa)
A-WEIGHTED FILTER
The human ear has a frequency range from 20 Hz to about
20 kHz. Within this range the sensitivity of the human ear is
not equal for each frequency. To approach the hearing re-
sponse weighting filters are introduced. One of those filters
is the A-weighted filter.
In order to be able to calculate the resulting output voltage of
the microphone for a given SPL, the sound pressure in dB
SPL needs to be converted to the absolute sound pressure
in dBPa. This is the sound pressure level in decibels which is
referred to as 1 Pascal (Pa).
The A-weighted filter is usually used in signal-to-noise ratio
measurements, where sound is compared to device noise. It
improves the correlation of the measured data to the signal-
to-noise ratio perceived by the human ear.
20084209
FIGURE 2. A-Weighted Filter
www.national.com
8
Application Section (Continued)
The conversion is given by:
dBPa = dB SPL + 20*log 20 µPa
dBPa = dB SPL - 94 dB
The LMV1032 is optimized to be used in audio band appli-
cations. The LMV1032 provides a flat gain response within
the audio band and offers linearity and excellent temperature
stability.
ADVANTAGE OF THREE PINS
Translation from absolute sound pressure level to a voltage
is specified by the sensitivity of the microphone. A conven-
tional microphone has a sensitivity of −44 dBV/Pa.
The LMV1032 ECM solution has three pins instead of the
two pins provided in the case of a JFET solution. The third
pin provides the advantage of a low supply current, high
PSRR and eliminates the need for additional components.
Noise pick-up by a microphone in a cell phone is a well-
known problem. A conventional JFET circuit is sensitive for
noise pick-up because of its high output impedance. The
output impedance is usually around 2.2 kΩ. By providing
separate output and supply pins a much lower output imped-
ance is achieved and therefore is less sensitive to noise
pick-up.
RF noise is among other caused by non-linear behavior. The
non-linear behavior of the amplifier at high frequencies, well
above the usable bandwidth of the device, causes AM de-
modulation of high frequency signals. The AM modulation
contained in such signals folds back into the audio band,
thereby disturbing the intended microphone signal. The
GSM signal of a cell phone is such an AM-modulated signal.
The modulation frequency of 216 Hz and its harmonics can
be observed in the audio band. This type of noise is called
bumblebee noise.
20084211
FIGURE 4. dB SPL to dBV Conversion
EXTERNAL PRE-AMPLIFIER APPLICATION
Example: Busy traffic is 70 dB SPL
VOUT = 70 −94 −44 = −68 dBV
This is equivalent to 1.13 mVPP
The LMV1032 can also be used outside of an ECM as a
space saving external pre-amplifier. In this application, the
LMV1032 follows a phantom biased JFET microphone in the
circuit. This is shown in Figure 6. The input of the LMV1032
is connected to the microphone via the 2.2 µF capacitor. The
advantage of this circuit over one with only a JFET micro-
phone are the additional gain and the high pass filter sup-
plied by the LMV1032. The high pass filter makes the output
signal more robust and less sensitive to low frequency dis-
turbances. In this configuration the LMV1032 should be
placed as close as possible to the microphone.
Since the LMV1032-15 has a gain of 5.6 (15 dB) over the
JFET, the output voltage of the microphone is 6.35 mVPP. By
replacing the JFET with the LMV1032-15, the sensitivity of
the microphone is −29 dBV/Pa (−44 + 15).
LOW FREQUENCY CUT OFF FILTER
To reduce noise on the output of the microphone a low cut
filter has been implemented in the LMV1032. This filter
reduces the effect of wind and handling noise.
It’s also helpful to reduce the proximity effect in directional
microphones. This effect occurs when the sound source is
very close to the microphone. The lower frequencies are
amplified which gives a bass sound. This amplification can
cause an overload, which results in a distortion of the signal.
20084226
FIGURE 6. LMV1032 as External Pre-Amplifier
20084215
FIGURE 5. Gain vs. Frequency
9
www.national.com
Physical Dimensions inches (millimeters)
unless otherwise noted
NOTE: UNLESS OTHERWISE SPECIFIED.
1. FOR SOLDER BUMP COMPOSITION, SEE "SOLDER INFORMATION" IN THE PACKAGING SECTION OF THE NATIONAL SEMICONDUCTOR WEB
PAGE (www.national.com).
2. RECOMMEND NON-SOLDER MASK DEFINED LANDING PAD.
3. PIN A1 IS ESTABLISHED BY LOWER LEFT CORNER WITH RESPECT TO TEXT ORIENTATION.
4. XXX IN DRAWING NUMBER REPRESENTS PACKAGE SIZE VARIATION WHERE X1 IS PACKAGE WIDTH, X2 IS PACKAGE LENGTH AND X3 IS
PACKAGE HEIGHT.
5. NO JEDEC REGISTRATION AS OF MAY 2005.
4-Bump Ultra Thin micro SMD with Large Dome Bump Technology
NS Package Number URA04JJA
X1 = 1.179 0.030 mm X2 = 1.179 0.030 mm X3 = 0.35 0.075 mm
www.national.com
10
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
NOTE: UNLESS OTHERWISE SPECIFIED.
1. FOR SOLDER BUMP COMPOSITION, SEE "SOLDER INFORMATION" IN THE PACKAGING SECTION OF THE NATIONAL SEMICONDUCTOR WEB
PAGE (www.national.com).
2. RECOMMEND NON-SOLDER MASK DEFINED LANDING PAD.
3. PIN A1 IS ESTABLISHED BY LOWER LEFT CORNER WITH RESPECT TO TEXT ORIENTATION.
4. XXX IN DRAWING NUMBER REPRESENTS PACKAGE SIZE VARIATION WHERE X1 IS PACKAGE WIDTH, X2 IS PACKAGE LENGTH AND X3 IS
PACKAGE HEIGHT.
5. REFERENCE JEDEC REGISTRATION MO-211. VARIATION CA.
4-Bump Ultra Thin micro SMD
NS Package Number UPA04QQA
X1 = 1.133 0.03 mm X2 = 1.133 0.03 mm X3 = 0.35 0.045 mm
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