LMV2011MFX [TI]

LMV2011 High Precision, Rail-to-Rail Output Operational Amplifier; LMV2011高精度,轨至轨输出运算放大器
LMV2011MFX
型号: LMV2011MFX
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

LMV2011 High Precision, Rail-to-Rail Output Operational Amplifier
LMV2011高精度,轨至轨输出运算放大器

运算放大器 放大器电路 光电二极管
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LMV2011  
www.ti.com  
SNOSA32C AUGUST 2003REVISED MARCH 2013  
LMV2011 High Precision, Rail-to-Rail Output Operational Amplifier  
Check for Samples: LMV2011  
1
FEATURES  
DESCRIPTION  
The LMV2011 is a new precision amplifier that offers  
unprecedented accuracy and stability at an affordable  
price and is offered in a miniature (5-pin SOT-23)  
package and in an 8-lead SOIC package. This device  
utilizes patented techniques to measure and  
continually correct the input offset error voltage. The  
result is an amplifier which is ultra stable over time  
and temperature. It has excellent CMRR and PSRR  
ratings, and does not exhibit the familiar 1/f voltage  
and current noise increase that plagues traditional  
amplifiers. The combination of the LMV2011  
characteristics makes it a good choice for transducer  
amplifiers, high gain configurations, ADC buffer  
amplifiers, DAC I-V conversion, and any other 2.7V-  
5V application requiring precision and long term  
stability.  
2
(For Vs = 5V, Typical Unless Otherwise Noted)  
Low Ensured Vos Over Temperature 35µV  
Low Noise with no 1/f 35nV/Hz  
High CMRR 130dB  
High PSRR 120dB  
High AVOL 130dB  
Wide Gain-Bandwidth Product 3MHz  
High Slew Rate 4V/µs  
Low Supply Current 930µA  
Rail-to-Rail Output 30mV  
No External Capacitors Required  
APPLICATIONS  
Other useful benefits of the LMV2011 are rail-to-rail  
output, a low supply current of 930µA, and wide gain-  
bandwidth product of 3MHz. These extremely  
versatile features found in the LMV2011 provide high  
performance and ease of use.  
Precision Instrumentation Amplifiers  
Thermocouple Amplifiers  
Strain Gauge Bridge Amplifier  
Connection Diagrams  
1
8
N/C  
N/C  
2
3
4
-
7
6
5
+
-
V
V
IN  
+
V
IN  
V
OUT  
+
-
N/C  
V
Figure 1. 5-Pin SOT-23 (Top View)  
See DBV Package  
Figure 2. 8-Pin SOIC (Top View)  
See D Package  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2003–2013, Texas Instruments Incorporated  
LMV2011  
SNOSA32C AUGUST 2003REVISED MARCH 2013  
www.ti.com  
Absolute Maximum Ratings(1)(2)  
Human Body Model  
2000V  
ESD Tolerance  
Machine Model  
Supply Voltage  
200V  
5.5V  
0.3VCM VCC +0.3V  
± Supply Voltage  
30mA  
Common-Mode Input Voltage  
Differential Input Voltage  
Current At Input Pin  
Current At Output Pin  
30mA  
Current At Power Supply Pin  
Junction Temperature (TJ)  
Lead Temperature (soldering 10 sec.)  
50mA  
150°C  
+300°C  
(1) Absolute Maximum Ratings indicate limits beyond which damage may occur. Operating Ratings indicate conditions for which the device  
is intended to be functional, but specific performance is not ensured. For ensured specifications and test conditions, see the Electrical  
Characteristics.  
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and  
specifications.  
Operating Ratings(1)  
Supply Voltage  
2.7V to 5.25V  
65°C to 150°C  
0°C to 70°C  
Storage Temperature Range  
Operating Temperature Range  
(1) Absolute Maximum Ratings indicate limits beyond which damage may occur. Operating Ratings indicate conditions for which the device  
is intended to be functional, but specific performance is not ensured. For ensured specifications and test conditions, see the Electrical  
Characteristics.  
2.7V DC Electrical Characteristics  
Unless otherwise specified, all limits ensured for T J = 25°C, V+ = 2.7V, V-= 0V, V CM = 1.35V, VO = 1.35V and RL > 1MΩ.  
Boldface limits apply at the temperature extremes.  
Symbol  
VOS  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
0.8  
25  
35  
μV  
Input Offset Voltage  
0.5  
10  
12  
ms  
Offset Calibration Time  
TCVOS  
Input Offset Voltage  
Long-Term Offset Drift  
Lifetime VOS Drift  
0.015  
0.006  
2.5  
-3  
μV/°C  
μV/month  
μV  
5
IIN  
Input Current  
pA  
IOS  
Input Offset Current  
Input Differential Resistance  
6
pA  
RIND  
CMRR  
9
MΩ  
0.3 VCM 0.9V  
0 VCM 0.9V  
130  
95  
90  
dB  
Common Mode Rejection Ratio  
Power Supply Rejection Ratio  
PSRR  
AVOL  
120  
130  
95  
90  
dB  
dB  
2.7V V+ 5V  
95  
90  
RL = 10kΩ  
RL = 2kΩ  
Open Loop Voltage Gain  
124  
90  
85  
VO  
2.665  
2.655  
2.68  
0.033  
2.65  
0.061  
RL = 10kto 1.35V  
VIN(diff) = ±0.5V  
V
V
0.060  
0.075  
Output Swing  
2.630  
2.615  
RL = 2kto 1.35V  
VIN(diff) = ±0.5V  
0.085  
0.105  
2
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Copyright © 2003–2013, Texas Instruments Incorporated  
Product Folder Links: LMV2011  
LMV2011  
www.ti.com  
SNOSA32C AUGUST 2003REVISED MARCH 2013  
2.7V DC Electrical Characteristics (continued)  
Unless otherwise specified, all limits ensured for T J = 25°C, V+ = 2.7V, V-= 0V, V CM = 1.35V, VO = 1.35V and RL > 1MΩ.  
Boldface limits apply at the temperature extremes.  
Symbol  
IO  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
Sourcing, VO = 0V  
12  
5
VIN(diff) = ±0.5V  
3
Output Current  
mA  
Sinking, VO = 5V  
V IN(diff) = ±0.5V  
18  
5
3
ROUT  
IS  
Output Impedance  
Supply Current  
0.05  
0.919  
1.20  
1.50  
mA  
2.7V AC Electrical Characteristics  
TJ = 25°C, V+ = 2.7V, V -= 0V, VCM = 1.35V, VO = 1.35V, and RL > 1MΩ. Boldface limits apply at the temperature extremes.  
Symbol  
GBW  
Parameter  
Gain-Bandwidth Product  
Slew Rate  
Conditions  
Min  
Typ  
3
Max  
Units  
MHz  
V/μs  
Deg  
SR  
θ m  
Gm  
en  
4
Phase Margin  
60  
Gain Margin  
14  
35  
dB  
Input-Referred Voltage Noise  
Input-Referred Current Noise  
Input-Referred Voltage Noise  
Input Overload Recovery Time  
nV/Hz  
fA/Hz  
nVpp  
ms  
in  
150  
850  
50  
enp-p  
trec  
ts  
RS = 100, DC to 10Hz  
1%  
0.9  
49  
AV = 1, RL = 2kΩ  
Output Settling Time  
0.1%  
0.01%  
μs  
1V Step  
100  
5V DC Electrical Characteristics  
Unless otherwise specified, all limits ensured for T J = 25°C, V+ = 5V, V-= 0V, V CM = 2.5V, VO = 2.5V and RL > 1MΩ. Boldface  
limits apply at the temperature extremes.  
Symbol  
VOS  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
0.12  
25  
35  
μV  
Input Offset Voltage  
0.5  
10  
12  
ms  
Offset Calibration Time  
TCVOS  
Input Offset Voltage  
Long-Term Offset Drift  
Lifetime VOS Drift  
0.015  
0.006  
2.5  
-3  
μV/°C  
μV/month  
μV  
5
IIN  
Input Current  
pA  
IOS  
Input Offset Current  
Input Differential Resistance  
6
pA  
RIND  
CMRR  
9
MΩ  
0.3 VCM 3.2  
0 VCM 3.2  
130  
100  
90  
dB  
Common Mode Rejection Ratio  
Power Supply Rejection Ratio  
PSRR  
AVOL  
120  
130  
132  
95  
90  
dB  
dB  
2.7V V+ 5V  
105  
100  
RL = 10kΩ  
RL = 2kΩ  
Open Loop Voltage Gain  
95  
90  
Copyright © 2003–2013, Texas Instruments Incorporated  
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3
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LMV2011  
SNOSA32C AUGUST 2003REVISED MARCH 2013  
www.ti.com  
5V DC Electrical Characteristics (continued)  
Unless otherwise specified, all limits ensured for T J = 25°C, V+ = 5V, V-= 0V, V CM = 2.5V, VO = 2.5V and RL > 1MΩ. Boldface  
limits apply at the temperature extremes.  
Symbol  
VO  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
4.96  
4.978  
4.95  
RL = 10kto 2.5V  
VIN(diff) = ±0.5V  
V
0.040  
4.919  
0.091  
15  
0.070  
0.085  
Output Swing  
4.895  
4.875  
RL = 2kto 2.5V  
VIN(diff) = ±0.5V  
V
0.115  
0.140  
IO  
Sourcing, VO = 0V  
VIN(diff) = ±0.5V  
8
6
Output Current  
mA  
Sinking, VO = 5V  
V IN(diff) = ±0.5V  
17  
8
6
ROUT  
IS  
Output Impedance  
0.05  
0.930  
1.20  
1.50  
Supply Current per Channel  
mA  
5V AC Electrical Characteristics  
TJ = 25°C, V+ = 5V, V -= 0V, VCM = 2.5V, VO = 2.5V, and RL > 1MΩ. Boldface limits apply at the temperature extremes.  
Symbol  
GBW  
Parameter  
Gain-Bandwidth Product  
Slew Rate  
Conditions  
Min  
Typ  
3
Max  
Units  
MHz  
V/μs  
deg  
SR  
θ m  
Gm  
en  
4
Phase Margin  
60  
Gain Margin  
15  
35  
dB  
Input-Referred Voltage Noise  
Input-Referred Current Noise  
Input-Referred Voltage Noise  
Input Overload Recovery Time  
nV/Hz  
fA/Hz  
nVpp  
ms  
in  
150  
850  
50  
enp-p  
trec  
ts  
RS = 100, DC to 10Hz  
1%  
0.8  
36  
AV = 1, RL = 2kΩ  
Output Settling Time  
0.1%  
0.01%  
us  
1V Step  
100  
4
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Copyright © 2003–2013, Texas Instruments Incorporated  
Product Folder Links: LMV2011  
LMV2011  
www.ti.com  
SNOSA32C AUGUST 2003REVISED MARCH 2013  
Typical Performance Characteristics  
TA=25C, VS= 5V unless otherwise specified.  
Supply Current vs. Supply Voltage  
Offset Voltage vs. Supply Voltage  
0°C  
5
4
3
1.20  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
70°C  
2
1
25°C  
70°C  
0
-1  
-2  
25°C  
-3  
0°C  
-4  
-5  
2.5  
3
3.5  
4
4.5  
5
5.5  
2.5  
3
3.5  
4.5  
5
5.5  
4
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Figure 3.  
Figure 4.  
Offset Voltage vs. Common Mode  
Offset Voltage vs. Common Mode  
10  
8
10  
0°C  
0°C  
8
6
25°C  
25°C  
6
4
4
70°C  
70°C  
2
2
0
0
-2  
-4  
-6  
-8  
-10  
-2  
-4  
-6  
-8  
-10  
V
= 2.7V  
0.3  
V
= 5V  
0.8  
S
S
-0.2  
0.8  
1.3  
1.8  
2.3  
-0.2  
1.8  
2.8  
3.8  
4.8  
COMMON MODE VOLTAGE (V)  
COMMON MODE VOLTAGE (V)  
Figure 5.  
Figure 6.  
Voltage Noise vs. Frequency  
Input Bias Current vs. Common Mode  
500  
400  
300  
200  
100  
0
10000  
1000  
100  
V
= 5V  
V = 5V  
S
S
-100  
-200  
-300  
-400  
-500  
10  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
(V)  
0.1  
1M  
1k  
10k 100k  
1
10  
100  
V
CM  
FREQUENCY (Hz)  
Figure 7.  
Figure 8.  
Copyright © 2003–2013, Texas Instruments Incorporated  
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LMV2011  
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Typical Performance Characteristics (continued)  
TA=25C, VS= 5V unless otherwise specified.  
PSRR vs. Frequency  
PSRR vs. Frequency  
120  
120  
100  
80  
V
V
= 2.7V  
V
= 5V  
S
S
= 1V  
V = 2.5V  
CM  
CM  
100  
80  
NEGATIVE  
NEGATIVE  
60  
60  
40  
40  
POSITIVE  
POSITIVE  
20  
0
20  
0
10  
100  
1k  
10k 100k  
1M  
10M  
10  
100  
1k  
10k 100k  
1M  
10M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 9.  
Figure 10.  
Output Sourcing @ 2.7V  
= 2.7V  
Output Sourcing @ 5V  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
V
S
V = 5V  
S
70°C  
0°C  
70°C  
0°C  
0°C  
0°C  
70°C  
25°C  
70°C  
25°C  
6
6
4
4
2
2
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
1
2
3
4
5
OUTPUT VOLTAGE (V)  
OUTPUT VOLTAGE (V)  
Figure 11.  
Figure 12.  
Output Sinking @ 2.7V  
0°C  
Output Sinking @ 5V  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
0°C  
25°C  
25°C  
70°C  
70°C  
6
6
4
4
2
2
V
S
= 2.7V  
2.5  
V
= 5V  
S
0
0
0
0.5  
1
1.5  
2
3
0
1
2
3
4
5
OUTPUT VOLTAGE (V)  
OUTPUT VOLTAGE (V)  
Figure 13.  
Figure 14.  
6
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Product Folder Links: LMV2011  
LMV2011  
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SNOSA32C AUGUST 2003REVISED MARCH 2013  
Typical Performance Characteristics (continued)  
TA=25C, VS= 5V unless otherwise specified.  
Max Output Swing vs. Supply Voltage  
Max Output Swing vs. Supply Voltage  
120  
120  
100  
80  
60  
40  
20  
0
R
L
= 10kW  
R = 2kW  
L
100  
80  
60  
40  
20  
0
25°C  
70°C  
0°C  
70°C  
25°C  
0°C  
2.5  
3
3.5  
4
4.5  
5
5.5  
2.5  
3
3.5  
4
4.5  
5
5.5  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Figure 15.  
Figure 16.  
Min Output Swing vs. Supply Voltage  
Min Output Swing vs. Supply Voltage  
120  
100  
80  
60  
40  
20  
0
120  
100  
80  
60  
40  
20  
0
R
= 10kW  
70°C  
L
25°C  
70°C  
0°C  
0°C  
25°C  
R
= 2kW  
L
2.5  
3
3.5  
4
4.5  
5
5.5  
2.5  
3
3.5  
4
4.5  
5
5.5  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Figure 17.  
Figure 18.  
CMRR vs. Frequency  
Open Loop Gain and Phase vs. Supply Voltage  
100  
150.0  
140  
V
S
= 5V  
V
= 5V  
S
120  
100  
80  
120.0  
PHASE  
V
= 5V  
S
60  
40  
20  
0
90.0  
60.0  
80  
60  
40  
20  
0
GAIN  
30.0  
0.0  
R
C
= 1M  
L
L
V
= 2.7V  
S
= < 20pF  
= 2.7V OR 5V  
V
S
-30.0  
10M  
-20  
100k  
1M  
100  
1k  
10k  
10  
100  
1k  
100k  
100k  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 19.  
Figure 20.  
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Typical Performance Characteristics (continued)  
TA=25C, VS= 5V unless otherwise specified.  
Open Loop Gain and Phase vs. RL @ 2.7V  
Open Loop Gain and Phase vs. RL @ 5V  
100  
80  
100  
80  
150.0  
150.0  
R
= >1M  
L
120.0  
120.0  
PHASE  
PHASE  
R
L
= 2k  
60  
40  
20  
0
60  
40  
20  
0
90.0  
60.0  
90.0  
60.0  
R
= >1M  
L
GAIN  
R
= >1M  
L
R
= >1M  
L
GAIN  
30.0  
0.0  
30.0  
0.0  
V
= 2.7V  
V
= 5V  
S
S
R
C
R
= >1M  
R
C
R
= >1M  
L
L
L
L
L
L
R
= 2k  
L
= < 20pF  
= >1M & 2k  
= < 20pF  
= >1M & 2k  
R
L
= 2k  
-30.0  
-30.0  
-20  
-20  
100k  
FREQUENCY (Hz)  
Figure 21.  
100k  
100  
1k  
10k  
1M  
10M  
100  
1k  
10k  
1M  
10M  
FREQUENCY (Hz)  
Figure 22.  
Open Loop Gain and Phase vs. CL @ 2.7V  
Open Loop Gain and Phase vs. CL @ 5V  
100  
80  
150.0  
100  
150.0  
10pF  
10pF  
120.0  
80  
60  
40  
20  
0
120.0  
PHASE  
PHASE  
10pF  
60  
40  
20  
0
90.0  
90.0  
10pF  
500pF  
60.0  
500pF  
60.0  
30.0  
0.0  
GAIN  
GAIN  
30.0  
0.0  
V
= 2.7V, R = >1M  
L
S
V
= 5V, R = >1M  
L
S
500pF  
1M  
C
L
= 10,50,200 & 500pF  
500pF  
C
= 10,50,200 & 500pF  
L
-30.0  
10M  
-20  
-20  
100  
-30.0  
10M  
100k  
1k  
10k  
10k  
1M  
100k  
100  
1k  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 23.  
Figure 24.  
Open Loop Gain and Phase vs. Temperature @ 2.7V  
Open Loop Gain and Phase vs. Temperature @ 5V  
113  
90  
68  
45  
23  
0
113  
90  
68  
45  
23  
0
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
PHASE  
PHASE  
0°C  
0°C  
0°C  
0°C  
GAIN  
GAIN  
25°C  
25°C  
70°C  
70°C  
70°C  
70°C  
V
V
= 2.7V  
V
V
= 5V  
S
S
= 200mV  
= 200mV  
PP  
OUT  
PP  
OUT  
R
= >1M  
R
= >1M  
L
L
L
L
C
= <20pF  
C
= <20pF  
-23  
-23  
-20  
-20  
1k  
10k  
100k  
1M  
10M  
1k  
10k  
100k  
1M  
10M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 25.  
Figure 26.  
8
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Typical Performance Characteristics (continued)  
TA=25C, VS= 5V unless otherwise specified.  
THD+N vs. AMPL  
THD+N vs. Frequency  
10  
10  
MEAS FREQ = 1 KHz  
V
= 2 V  
PP  
OUT  
MEAS BW = 500 kHz  
MEAS BW = 22 KHz  
R
= 10k  
= +10  
L
R
= 10k  
= +10  
L
A
V
A
V
1
0.1  
V = 2.7V  
S
1
V
S
= 2.7V  
V
= 5V  
S
0.1  
0.01  
V
S
= 5V  
V
S
= 5V  
V
= 2.7V  
100  
S
0.01  
0.1  
1
10  
10  
1k  
10k  
100k  
OUTPUT VOLTAGE (V  
)
PP  
FREQUENCY (Hz)  
Figure 27.  
Figure 28.  
0.1Hz 10Hz Noise vs. Time  
1 sec/DIV  
Figure 29.  
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APPLICATION INFORMATION  
THE BENEFITS OF LMV2011 NO 1/f NOISE  
Using patented methods, the LMV2011 eliminates the 1/f noise present in other amplifiers. That noise, which  
increases as frequency decreases, is a major source of measurement error in all DC-coupled measurements.  
Low-frequency noise appears as a constantly-changing signal in series with any measurement being made. As a  
result, even when the measurement is made rapidly, this constantly-changing noise signal will corrupt the result.  
The value of this noise signal can be surprisingly large. For example: If a conventional amplifier has a flat-band  
noise level of 10nV/Hz and a noise corner of 10Hz, the RMS noise at 0.001Hz is 1µV/Hz. This is equivalent to  
a 0.50µV peak-to-peak error, in the frequency range 0.001 Hz to 1.0 Hz. In a circuit with a gain of 1000, this  
produces a 0.50mV peak-to-peak output error. This number of 0.001 Hz might appear unreasonably low, but  
when a data acquisition system is operating for 17 minutes, it has been on long enough to include this error. In  
this same time, the LMV2011 will only have a 0.21mV output error. This is smaller by 2.4 x. Keep in mind that  
this 1/f error gets even larger at lower frequencies. At the extreme, many people try to reduce this error by  
integrating or taking several samples of the same signal. This is also doomed to failure because the 1/f nature of  
this noise means that taking longer samples just moves the measurement into lower frequencies where the noise  
level is even higher.  
The LMV2011 eliminates this source of error. The noise level is constant with frequency so that reducing the  
bandwidth reduces the errors caused by noise.  
Another source of error that is rarely mentioned is the error voltage caused by the inadvertent thermocouples  
created when the common "Kovar type" IC package lead materials are soldered to a copper printed circuit board.  
These steel-based leadframe materials can produce over 35μV/°C when soldered onto a copper trace. This can  
result in thermocouple noise that is equal to the LMV2011 noise when there is a temperature difference of only  
0.0014°C between the lead and the board!  
For this reason, the lead-frame of the LMV2011 is made of copper. This results in equal and opposite junctions  
which cancel this effect. The extremely small size of the SOT-23 package results in the leads being very close  
together. This further reduces the probability of temperature differences and hence decreases thermal noise.  
OVERLOAD RECOVERY  
The LMV2011 recovers from input overload much faster than most chopper-stabilized opamps. Recovery from  
driving the amplifier to 2X the full scale output, only requires about 40ms. Many chopper-stabilized amplifiers will  
take from 250ms to several seconds to recover from this same overload. This is because large capacitors are  
used to store the unadjusted offset voltage.  
Figure 30. Overload Recovery Test  
The wide bandwidth of the LMV2011 enhances performance when it is used as an amplifier to drive loads that  
inject transients back into the output. ADCs (Analog-to-Digital Converters) and multiplexers are examples of this  
type of load. To simulate this type of load, a pulse generator producing a 1V peak square wave was connected  
to the output through a 10pF capacitor (Figure 30). The typical time for the output to recover to 1% of the applied  
pulse is 80ns. To recover to 0.1% requires 860ns. This rapid recovery is due to the wide bandwidth of the output  
stage and large total GBW.  
NO EXTERNAL CAPACITORS REQUIRED  
The LMV2011 does not need external capacitors. This eliminates the problems caused by capacitor leakage and  
dielectric absorption, which can cause delays of several seconds from turn-on until the amplifier's error has  
settled.  
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MORE BENEFITS  
The LMV2011 offers the benefits mentioned above and more. It has a rail-to-rail output and consumes only  
950µA of supply current while providing excellent DC and AC electrical performance. In DC performance, the  
LMC2001 achieves 130dB of CMRR, 120dB of PSRR and 130dB of open loop gain. In AC performance, the  
LMV2011 provides 3MHz of gain-bandwidth product and 4V/µs of slew rate.  
HOW THE LMV2011 WORKS  
The LMV2011 uses new, patented techniques to achieve the high DC accuracy traditionally associated with  
chopper-stabilized amplifiers without the major drawbacks produced by chopping. The LMV2011 continuously  
monitors the input offset and corrects this error. The conventional chopping process produces many mixing  
products, both sums and differences, between the chopping frequency and the incoming signal frequency. This  
mixing causes large amounts of distortion, particularly when the signal frequency approaches the chopping  
frequency. Even without an incoming signal, the chopper harmonics mix with each other to produce even more  
trash. If this sounds unlikely or difficult to understand, look at the plot (Figure 31), of the output of a typical  
(MAX432) chopper-stabilized opamp. This is the output when there is no incoming signal, just the amplifier in a  
gain of -10 with the input grounded. The chopper is operating at about 150Hz; the rest is mixing products. Add  
an input signal and the noise gets much worse. Compare this plot with Figure 32 of the LMV2011. This data was  
taken under the exact same conditions. The auto-zero action is visible at about 30kHz but note the absence of  
mixing products at other frequencies. As a result, the LMV2011 has very low distortion of 0.02% and very low  
mixing products.  
Figure 31. The Output of a Chopper Stabilized Op Amp (MAX432)  
10000  
V
= 5V  
S
1000  
100  
10  
0.1  
1M  
1k  
10k 100k  
1
10  
100  
FREQUENCY (Hz)  
Figure 32. The Output of the LMV2011  
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INPUT CURRENTS  
The LMV2011's input currents are different than standard bipolar or CMOS input currents in that it appears as a  
current flowing in one input and out the other. Under most operating conditions, these currents are in the  
picoamp level and will have little or no effect in most circuits. These currents tend to increase slightly when the  
common-mode voltage is near the minus supply (See the Typical Performance Characteristics). At high  
temperatures such as 85°C, the input currents become larger, 0.5nA typical, and are both positive except when  
the VCM is near V. If operation is expected at low common-mode voltages and high temperature, do not add  
resistance in series with the inputs to balance the impedances. Doing this can cause an increase in offset  
voltage. A small resistance such as 1kcan provide some protection against very large transients or overloads,  
and will not increase the offset significantly.  
PRECISION STRAIN-GAUGE AMPLIFIER  
This Strain-Gauge amplifier (Figure 32) provides high gain (1006 or ~60 dB) with very low offset and drift. Using  
the resistors' tolerances as shown, the worst case CMRR will be greater than 108 dB. The CMRR is directly  
related to the resistor mismatch. The rejection of common-mode error, at the output, is independent of the  
differential gain, which is set by R3. The CMRR is further improved, if the resistor ratio matching is improved, by  
specifying tighter-tolerance resistors, or by trimming.  
Figure 33. Precision Strain Gauge Amplifier  
Extending Supply Voltages and Output Swing by Using a Composite Amplifier Configuration:  
In cases where substantially higher output swing is required with higher supply voltages, arrangements like the  
ones shown in Figure 34 and Figure 35 could be used. These configurations utilize the excellent DC performance  
of the LMV2011 while at the same time allow the superior voltage and frequency capabilities of the LM6171 to  
set the dynamic performance of the overall amplifier. For example, it is possible to achieve ±12V output swing  
with 300MHz of overall GBW (AV = 100) while keeping the worst case output shift due to VOS less than 4mV. The  
LMV2011 output voltage is kept at about mid-point of its overall supply voltage, and its input common mode  
voltage range allows the V- terminal to be grounded in one case (Figure 34, inverting operation) and tied to a  
small non-critical negative bias in another (Figure 35, non-inverting operation). Higher closed-loop gains are also  
possible with a corresponding reduction in realizable bandwidth. Table 1 shows some other closed loop gain  
possibilities along with the measured performance in each case.  
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Figure 34. Composite Amplifier Configuration  
Table 1. Composite Amplifier Measured Performance  
AV  
50  
R1 ()  
200  
100  
1k  
R2 ()  
10k  
C2 (pF)  
8
BW (MHz)  
3.3  
SR (V/μs)  
178  
en p-p (mVPP)  
37  
70  
100  
100  
500  
1000  
10k  
10  
2.5  
174  
100k  
100k  
100k  
0.67  
1.75  
2.2  
3.1  
170  
70  
200  
100  
1.4  
96  
250  
400  
0.98  
64  
In terms of the measured output peak-to-peak noise, the following relationship holds between output noise  
voltage, en p-p, for different closed-loop gain, AV, settings, where 3dB Bandwidth is BW:  
(1)  
Figure 35. Composite Amplifier Configuration  
It should be kept in mind that in order to minimize the output noise voltage for a given closed-loop gain setting,  
one could minimize the overall bandwidth. As can be seen from Equation 1 above, the output noise has a  
square-root relationship to the Bandwidth.  
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In the case of the inverting configuration, it is also possible to increase the input impedance of the overall  
amplifier, by raising the value of R1, without having to increase the feed-back resistor, R2, to impractical values,  
by utilizing a "Tee" network as feedback. See the LMC6442 data sheet (Application Notes section) for more  
details on this.  
Figure 36. AC Coupled ADC Driver  
LMV2011 AS ADC INPUT AMPLIFIER  
The LMV2011 is a great choice for an amplifier stage immediately before the input of an ADC (Analog-to-Digital  
Converter), whether AC or DC coupled. See Figure 36 and Figure 37. This is because of the following important  
characteristics:  
A)  
Very low offset voltage and offset voltage drift over time and temperature allow a high closed-loop gain  
setting without introducing any short-term or long-term errors. For example, when set to a closed-loop gain  
of 100 as the analog input amplifier for a 12-bit A/D converter, the overall conversion error over full  
operation temperature and 30 years life of the part (operating at 50°C) would be less than 5 LSBs.  
B)  
C)  
Fast large-signal settling time to 0.01% of final value (1.4μs) allows 12 bit accuracy at 100KHZ or more  
sampling rate.  
No flicker (1/f) noise means unsurpassed data accuracy over any measurement period of time, no matter  
how long. Consider the following opamp performance, based on a typical low-noise, high-performance  
commercially-available device, for comparison:  
Opamp flatband noise = 8nV/Hz  
1/f corner frequency = 100Hz  
AV = 2000  
Measurement time = 100 sec  
Bandwidth = 2Hz  
This example will result in about 2.2 mVPP (1.9 LSB) of output noise contribution due to the opamp alone,  
compared to about 594μVPP (less than 0.5 LSB) when that opamp is replaced with the LMV2011 which  
has no 1/f contribution. If the measurement time is increased from 100 seconds to 1 hour, the  
improvement realized by using the LMV2011 would be a factor of about 4.8 times (2.86mVPP compared to  
596μV when LMV2011 is used) mainly because the LMV2011 accuracy is not compromised by increasing  
the observation time.  
D)  
E)  
Copper leadframe construction minimizes any thermocouple effects which would degrade low level/high  
gain data conversion application accuracy (see THE BENEFITS OF LMV2011 NO 1/f NOISE).  
Rail-to-Rail output swing maximizes the ADC dynamic range in 5-Volt single-supply converter applications.  
Below are some typical block diagrams showing the LMV2011 used as an ADC amplifier (Figure 36 and  
Figure 37).  
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Figure 37. DC Coupled ADC Driver  
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REVISION HISTORY  
Changes from Revision B (March 2013) to Revision C  
Page  
Changed layout of National Data Sheet to TI format .......................................................................................................... 15  
16  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
11-Apr-2013  
PACKAGING INFORMATION  
Orderable Device  
LMV2011MA  
Status Package Type Package Pins Package  
Eco Plan Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
0 to 70  
Top-Side Markings  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4)  
ACTIVE  
SOIC  
SOIC  
SOIC  
SOIC  
D
8
8
8
8
95  
TBD  
Call TI  
CU SN  
Call TI  
CU SN  
Call TI  
LMV20  
11MA  
LMV2011MA/NOPB  
LMV2011MAX  
ACTIVE  
ACTIVE  
ACTIVE  
D
D
D
95  
Green (RoHS  
& no Sb/Br)  
Level-1-260C-UNLIM  
Call TI  
0 to 70  
LMV20  
11MA  
2500  
2500  
TBD  
0 to 70  
LMV20  
11MA  
LMV2011MAX/NOPB  
Green (RoHS  
& no Sb/Br)  
Level-1-260C-UNLIM  
0 to 70  
LMV20  
11MA  
LMV2011MF  
ACTIVE  
ACTIVE  
SOT-23  
SOT-23  
DBV  
DBV  
5
5
1000  
1000  
TBD  
Call TI  
CU SN  
Call TI  
0 to 70  
0 to 70  
A84A  
LMV2011MF/NOPB  
Green (RoHS  
& no Sb/Br)  
Level-1-260C-UNLIM  
A84A  
LMV2011MFX  
ACTIVE  
ACTIVE  
SOT-23  
SOT-23  
DBV  
DBV  
5
5
3000  
3000  
TBD  
Call TI  
CU SN  
Call TI  
0 to 70  
0 to 70  
A84A  
A84A  
LMV2011MFX/NOPB  
Green (RoHS  
& no Sb/Br)  
Level-1-260C-UNLIM  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
11-Apr-2013  
(4)  
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a  
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
8-Apr-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LMV2011MAX  
LMV2011MAX/NOPB  
LMV2011MF  
SOIC  
SOIC  
D
8
8
5
5
5
5
2500  
2500  
1000  
1000  
3000  
3000  
330.0  
330.0  
178.0  
178.0  
178.0  
178.0  
12.4  
12.4  
8.4  
6.5  
6.5  
3.2  
3.2  
3.2  
3.2  
5.4  
5.4  
3.2  
3.2  
3.2  
3.2  
2.0  
2.0  
1.4  
1.4  
1.4  
1.4  
8.0  
8.0  
4.0  
4.0  
4.0  
4.0  
12.0  
12.0  
8.0  
Q1  
Q1  
Q3  
Q3  
Q3  
Q3  
D
SOT-23  
SOT-23  
SOT-23  
SOT-23  
DBV  
DBV  
DBV  
DBV  
LMV2011MF/NOPB  
LMV2011MFX  
8.4  
8.0  
8.4  
8.0  
LMV2011MFX/NOPB  
8.4  
8.0  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
8-Apr-2013  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LMV2011MAX  
LMV2011MAX/NOPB  
LMV2011MF  
SOIC  
SOIC  
D
8
8
5
5
5
5
2500  
2500  
1000  
1000  
3000  
3000  
367.0  
367.0  
210.0  
210.0  
210.0  
210.0  
367.0  
367.0  
185.0  
185.0  
185.0  
185.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
D
SOT-23  
SOT-23  
SOT-23  
SOT-23  
DBV  
DBV  
DBV  
DBV  
LMV2011MF/NOPB  
LMV2011MFX  
LMV2011MFX/NOPB  
Pack Materials-Page 2  
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NSC

LMV225

LMV225/LMV226/LMV228 RF Power Detector for CDMA and WCDMA
TI

LMV225SD

RF Power Detector for CDMA and WCDMA
NSC

LMV225SD

LMV225/LMV226/LMV228 RF Power Detector for CDMA and WCDMA
TI

LMV225SD/NOPB

RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON -40 to 85
TI