SN74LVC2G126-EP [TI]

具有三态输出的增强型产品 2 通道、1.65V 至 5.5V 缓冲器;
SN74LVC2G126-EP
型号: SN74LVC2G126-EP
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

具有三态输出的增强型产品 2 通道、1.65V 至 5.5V 缓冲器

驱动 总线驱动器 总线收发器
文件: 总13页 (文件大小:767K)
中文:  中文翻译
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SN74LVC2G126-EP  
www.ti.com  
SCES856 DECEMBER 2013  
DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS  
Check for Samples: SN74LVC2G126-EP  
1
FEATURES  
Supports 5-V VCC Operation  
SUPPORTS DEFENSE, AEROSPACE,  
AND MEDICAL APPLICATIONS  
Inputs Accept Voltages to 5.5 V  
Max tpd of 6.8 ns at 3.3 V  
Controlled Baseline  
One Assembly and Test Site  
One Fabrication Site  
Low Power Consumption, 10-μA Max ICC  
±24-mA Output Drive at 3.3 V  
Available in Military (–55°C to 125°C)  
Temperature Range  
Typical VOLP (Output Ground Bounce)  
<0.8 V at VCC = 3.3 V, TA = 25°C  
Extended Product Life Cycle  
Extended Product-Change Notification  
Product Traceability  
Typical VOHV (Output VOH Undershoot)  
>2 V at VCC = 3.3 V, TA = 25°C  
Ioff Supports Partial-Power-Down Mode  
Operation  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
DCU PACKAGE  
(TOP VIEW)  
ESD Protection Exceeds JESD 22  
VCC  
2OE  
1Y  
1
2
3
4
8
7
6
5
1OE  
1A  
2000-V Human-Body Model (A114-A)  
200-V Machine Model (A115-A)  
2Y  
GND  
2A  
1000-V Charged-Device Model (C101)  
DESCRIPTION  
This dual bus buffer gate is designed for 1.65-V to 5.5-V VCC operation.  
The SN74LVC2G126 is a dual bus driver/line driver with 3-state outputs. The outputs are disabled when the  
associated output-enable (OE) input is low.  
To ensure the high-impedance state during power up or power down, OE should be tied to GND through a  
pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.  
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,  
preventing damaging current backflow through the device when it is powered down.  
ORDERING INFORMATION(1)  
TJ  
PACKAGE(2)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING  
VID NUMBER  
–55°C to 125°C  
VSSOP - DCU Tape of 250  
CLVC2G126MDCUTEP  
CEPR  
V62/14604-01XE  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
website at www.ti.com.  
(2) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
Function Table  
(Each Buffer)  
INPUTS  
OUTPUT  
Y
OE  
A
H
L
H
H
L
H
L
X
Z
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2013, Texas Instruments Incorporated  
SN74LVC2G126-EP  
SCES856 DECEMBER 2013  
www.ti.com  
Logic Diagram (Positive Logic)  
1
1OE  
1A  
2
6
3
1Y  
2Y  
7
5
2OE  
2A  
ABSOLUTE MAXIMUM RATINGs(1)  
over operating free-air temperature range (unless otherwise noted)  
MIN  
–0.5  
–0.5  
–0.5  
MAX UNIT  
VCC Supply voltage range  
6.5  
6.5  
6.5  
V
V
VI  
Input voltage range(2)  
VO  
VO  
IIK  
Voltage range applied to any output in the high-impedance or power-off state(2)  
Voltage range applied to any output in the high or low state(2) (3)  
V
–0.5 VCC + 0.5  
V
Input clamp current  
VI < 0  
–50  
–50  
mA  
mA  
mA  
mA  
°C  
°C  
IOK  
IO  
Output clamp current  
VO < 0  
Continuous output current  
±50  
Continuous current through VCC or GND  
Absolute maximum junction temperature range  
Storage temperature range  
±100  
TJ  
–55  
–65  
150  
150  
Tstg  
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating  
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.  
(3) The value of VCC is provided in the recommended operating conditions table.  
THERMAL INFORMATION  
SN74LVC2G126-EP  
THERMAL METRIC(1)  
DCU  
8 PINS  
204.3  
78  
UNITS  
θJA  
Junction-to-ambient thermal resistance(2)  
Junction-to-case (top) thermal resistance(3)  
Junction-to-board thermal resistance(4)  
Junction-to-top characterization parameter(5)  
Junction-to-board characterization parameter(6)  
Junction-to-case (bottom) thermal resistance(7)  
θJCtop  
θJB  
83  
°C/W  
ψJT  
7.6  
ψJB  
82.6  
N/A  
θJCbot  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.  
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as  
specified in JESD51-7, in an environment described in JESD51-2a.  
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-  
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.  
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB  
temperature, as described in JESD51-8.  
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted  
from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).  
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted  
from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).  
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific  
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.  
Spacer  
2
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SCES856 DECEMBER 2013  
RECOMMENDED OPERATING CONDITIONS(1)  
MIN  
MAX UNIT  
Operating  
1.65  
1.5  
5.5  
V
VCC  
Supply voltage  
Data retention only  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
0.65 × VCC  
1.7  
VIH  
High-level input voltage  
V
2
0.7 × VCC  
0.35 × VCC  
0.7  
0.8  
VIL  
Low-level input voltage  
V
0.3 × VCC  
5.5  
VI  
Input voltage  
0
0
0
V
V
High or low state  
3-state  
VCC  
5.5  
VO  
Output voltage  
VCC = 1.65 V  
VCC = 2.3 V  
–4  
–8  
IOH  
High-level output current  
Low-level output current  
–16  
–24  
–32  
4
mA  
mA  
VCC = 3 V  
VCC = 4.5 V  
VCC = 1.65 V  
VCC = 2.3 V  
8
IOL  
16  
VCC = 3 V  
24  
VCC = 4.5 V  
32  
VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V  
VCC = 3.3 V ± 0.3 V  
VCC = 5 V ± 0.5 V  
20  
Δt/Δv  
Input transition rise or fall rate  
10  
ns/V  
°C  
5
TJ  
Operating virtual junction temperature  
–55  
125  
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,  
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.  
Copyright © 2013, Texas Instruments Incorporated  
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SN74LVC2G126-EP  
SCES856 DECEMBER 2013  
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ELECTRICAL CHARACTERISTICS  
These specifications apply for –55°C TJ 125°C (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
VCC  
1.65 V to 5.5 V  
1.65 V  
MIN  
VCC – 0.1  
1.2  
TYP(1)  
MAX  
UNIT  
IOH = –100 μA  
IOH = –4 mA  
IOH = –8 mA  
IOH = –16 mA  
IOH = –24 mA  
IOH = –32 mA  
IOL = 100 μA  
IOL = 4 mA  
2.3 V  
1.9  
VOH  
V
2.4  
3 V  
2.3  
4.5 V  
1.65 V to 5.5 V  
1.65 V  
3.8  
0.1  
0.45  
0.3  
IOL = 8 mA  
2.3 V  
VOL  
V
IOL = 16 mA  
IOL = 24 mA  
IOL = 32 mA  
0.4  
3 V  
0.55  
0.55  
4.5 V  
A or OE  
inputs  
II  
VI = 5.5 V or GND  
0 to 5.5 V  
±5  
μA  
Ioff  
VI or VO = 5.5 V  
VO = 0 to 5.5 V  
VI = 5.5 V or GND,  
0
±10  
10  
μA  
μA  
μA  
μA  
IOZ  
3.6 V  
ICC  
ΔICC  
IO = 0  
1.65 V to 5.5 V  
3 V to 5.5 V  
10  
One input at VCC – 0.6 V,  
Other inputs at VCC or GND  
500  
Data inputs  
3.5  
4
CI  
VI = VCC or GND  
3.3 V  
3.3 V  
pF  
pF  
Control  
inputs  
Co  
VO = VCC or GND  
6.5  
(1) All typical values are at VCC = 3.3 V, TJ = 25°C.  
SWITCHING CHARACTERISTICS  
These specifications apply for –55°C TJ 125°C (unless otherwise noted) (see Figure 2)  
VCC = 1.8 V  
± 0.15 V  
VCC = 2.5 V  
± 0.2 V  
VCC = 3.3 V  
± 0.3 V  
VCC = 5 V  
± 0.5 V  
FROM  
(INPUT)  
TO  
(OUTPUT)  
PARAMETER  
UNIT  
MIN  
3.5  
3.5  
1.7  
MAX  
MIN  
1.7  
1.7  
1
MAX  
MIN  
1.4  
1.5  
1
MAX  
MIN  
MAX  
5.5  
tpd  
ten  
tdis  
A
Y
Y
Y
15.2  
15.2  
12.6  
8.6  
8.6  
5.7  
6.8  
6.8  
4.5  
1
1
ns  
ns  
ns  
OE  
OE  
5.5  
0.1  
3.3  
OPERATING CHARACTERISTICS  
TJ = 25°  
VCC = 1.8 V  
VCC = 2.5 V  
VCC = 3.3 V  
VCC = 5 V  
TEST  
CONDITIONS  
PARAMETER  
UNIT  
TYP  
19  
2
TYP  
19  
2
TYP  
20  
2
TYP  
22  
3
Outputs enabled  
Outputs disabled  
Power dissipation  
capacitance  
Cpd  
f = 10 MHz  
pF  
4
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Product Folder Links: SN74LVC2G126-EP  
SN74LVC2G126-EP  
www.ti.com  
SCES856 DECEMBER 2013  
1000000  
100000  
10000  
EM Voiding Fail Mode  
1000  
80  
90  
100  
110  
Junction Temperature, TJ (°C)  
(1) See datasheet for absolute maximum and minimum recommended operating conditions.  
120  
130  
140  
150  
(2) Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect  
life).  
(3) Enhanced plastic product disclaimer applies.  
Figure 1. SN74LVC2G126-EP Operating Life Derating Chart  
Copyright © 2013, Texas Instruments Incorporated  
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SN74LVC2G126-EP  
SCES856 DECEMBER 2013  
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PARAMETER MEASUREMENT INFORMATION  
VLOAD  
Open  
GND  
S1  
RL  
From Output  
Under Test  
TEST  
tPLH/tPHL  
tPLZ/tPZL  
tPHZ/tPZH  
S1  
Open  
VLOAD  
GND  
CL  
(see Note A)  
RL  
LOAD CIRCUIT  
INPUTS  
VCC  
VM  
VLOAD  
CL  
RL  
V
D
VI  
tr/tf  
VCC  
VCC  
3 V  
VCC  
1.8 V ± 0.15 V  
2.5 V ± 0.2 V  
3.3 V ± 0.3 V  
5 V ± 0.5 V  
£2 ns  
£2 ns  
VCC/2  
VCC/2  
1.5 V  
VCC/2  
2 × VCC  
2 × VCC  
6 V  
30 pF  
30 pF  
50 pF  
50 pF  
1 kW  
0.15 V  
0.15 V  
0.3 V  
500 W  
500 W  
500 W  
£2.5 ns  
£2.5 ns  
2 × VCC  
0.3 V  
VI  
Timing Input  
Data Input  
VM  
0 V  
tW  
tsu  
th  
VI  
VI  
Input  
VM  
VM  
VM  
VM  
0 V  
0 V  
VOLTAGE WAVEFORMS  
PULSE DURATION  
VOLTAGE WAVEFORMS  
SETUP AND HOLD TIMES  
VI  
VI  
Output  
Control  
VM  
VM  
Input  
VM  
VM  
0 V  
0 V  
tPZL  
tPLZ  
tPLH  
tPHL  
VM  
Output  
Waveform 1  
S1 at VLOAD  
VOH  
VOL  
VLOAD/2  
VOL  
VM  
VM  
Output  
Output  
VOL + V  
D
(see Note B)  
tPHL  
tPLH  
tPZH  
tPHZ  
VOH  
VOL  
Output  
Waveform 2  
S1 at GND  
VOH  
VOH – V  
D
VM  
VM  
VM  
»0 V  
(see Note B)  
VOLTAGE WAVEFORMS  
PROPAGATION DELAY TIMES  
INVERTING AND NONINVERTING OUTPUTS  
VOLTAGE WAVEFORMS  
ENABLE AND DISABLE TIMES  
LOW- AND HIGH-LEVEL ENABLING  
NOTES: A. CL includes probe and jig capacitance.  
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.  
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.  
C. All input pulses are supplied by generators having the following characteristics: PRR £ 10 MHz, ZO = 50 W.  
D. The outputs are measured one at a time, with one transition per measurement.  
E. tPLZ and tPHZ are the same as tdis.  
F. tPZL and tPZH are the same as ten.  
G. tPLH and tPHL are the same as tpd.  
H. All parameters and waveforms are not applicable to all devices.  
Figure 2. Load Circuit and Voltage Waveforms  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
24-Dec-2013  
PACKAGING INFORMATION  
Orderable Device  
CLVC2G126MDCUTEP  
V62/14604-01XE  
Status Package Type Package Pins Package  
Eco Plan  
Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-55 to 125  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(6)  
(3)  
(4/5)  
ACTIVE  
US8  
US8  
DCU  
8
8
250  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
Level-1-260C-UNLIM  
CEPR  
ACTIVE  
DCU  
250  
TBD  
Call TI  
Call TI  
-55 to 125  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish  
value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
24-Dec-2013  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF SN74LVC2G126-EP :  
Catalog: SN74LVC2G126  
NOTE: Qualified Version Definitions:  
Catalog - TI's standard catalog product  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
20-Dec-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
CLVC2G126MDCUTEP  
US8  
DCU  
8
250  
180.0  
8.4  
2.25  
3.35  
1.05  
4.0  
8.0  
Q3  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
20-Dec-2013  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
US8 DCU  
SPQ  
Length (mm) Width (mm) Height (mm)  
202.0 201.0 28.0  
CLVC2G126MDCUTEP  
8
250  
Pack Materials-Page 2  
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