SN75372P [TI]
DUAL MOSFET DRIVER; 双MOSFET驱动器
| 型号： | SN75372P |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | DUAL MOSFET DRIVER |
| 文件： | 总11页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
• Dual Circuits Capable of Driving
D OR P PACKAGE
(TOP VIEW)
High-Capacitance Loads at High Speeds
• Output Supply Voltage Range up to 24 V
• Low Standby Power Dissipation
1A
E
V
CC1
1Y
2Y
1
2
3
4
8
7
6
5
2A
description
GND
V
CC2
The SN75372 is a dual NAND gate interface
circuit designed to drive power MOSFETs from
TTL inputs. It provides high current and voltage
levels necessary to drive large capacitive loads at
†
logic symbol
2
E
EN
high speeds. The device operates from a V
of
CC1
1
5 V and a V
of up to 24 V.
TTL/MOS
CC2
7
6
1A
1Y
2Y
3
The SN75372 is characterized for operation from
0°C to 70°C.
2A
†
This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12.
schematic (each driver)
V
CC1
V
CC2
To Other
Driver
Input A
Output Y
Enable E
GND
To Other
Driver
Copyright 1986, Texas Instruments Incorporated
Revision Information
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
3–1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
Supply voltage range, V
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 25 V
CC1
CC2
Input voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V
I
Peak output current, V (t < 10 ms, duty cycle < 50%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
O
w
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
A
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Voltage values are with respect to network GND.
DISSIPATION RATING TABLE
= 25°C DERATING FACTOR
T
A
T = 70°C
A
POWER RATING
PACKAGE
POWER RATING
ABOVE T = 25°C
A
D
P
725 mW
5.8 mW/°C
8.0 mW/°C
464 mW
1000 mW
640 mW
recommended operating conditions
MIN NOM
MAX
5.25
24
UNIT
V
Supply voltage, V
Supply voltage, V
4.75
5
CC1
CC2
4.75
2
20
V
High-level input voltage, V
V
IH
Low-level input voltage, V
0.8
–10
40
V
IL
High-level output current, I
mA
mA
°C
OH
Low-level output current, I
OL
Operating free-air temperature, T
0
70
A
3–2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
electrical characteristics over recommended ranges of V
temperature (unless otherwise noted)
, V
, and operating free-air
CC1
CC2
†
TYP
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V
V
Input clamp voltage
I = –12 mA
–1.5
V
IK
I
V
= 0.8 V,
= 0.8 V,
= 2 V,
I
I
I
= –50 µA
= –10 mA
= 10 mA
= 2 V,
V
V
–1.3
V
V
–0.8
–1.8
IL
IL
IH
OH
OH
OL
CC2
CC2
High-level output voltage
V
OH
V
V
V
–2.5
CC2
CC2
0.15
0.3
0.5
1.5
V
V
Low-level output voltage
V
= 15 V to 24 V,
V
IH
OL
CC2
= 40 mA
0.25
I
OL
V = 0,
Output clamp-diode forward voltage
I
F
= 20 mA
V
F
I
Input current at maximum input
voltage
I
I
I
V = 5.5 V
1
mA
I
I
Any A
40
80
High-level input current
Low-level input current
V = 2.4 V
I
µA
IH
IL
Any E
Any A
Any E
–1
–2
–1.6
–3.2
V = 0.4 V
I
mA
Supply current from V
outputs high
, both
, both
, both
, both
CC1
CC2
CC1
CC2
CC2
I
I
I
I
I
2
4
0.5
24
mA
mA
mA
mA
mA
CC1(H)
CC2(H)
CC1(L)
CC2(L)
CC2(S)
V
= 5.25 V,
V
= 24 V,
CC1
All inputs at 0 V,
CC2
No load
Supply current from V
outputs high
Supply current from V
outputs low
16
7
V
= 5.25 V,
V
= 24 V,
CC1
All inputs at 5 V,
CC2
No load
Supply current from V
outputs low
13
Supply current from V
condition
, standby
V
= 0,
V
= 24 V,
CC1
All inputs at 5 V,
CC2
No load
0.5
†
All typical values are at V
= 5 V, V
= 20 V, and T = 25°C.
CC2 A
CC1
switching characteristics, V
= 5 V, V
= 20 V, T = 25°C
CC1
CC2
A
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
35
UNIT
ns
t
t
t
t
t
t
Delay time, low-to-high-level output
Delay time, high-to-low-level output
20
10
20
20
40
30
DLH
DHL
TLH
THL
PLH
PHL
20
ns
Transition time, low-to-high-level output
30
ns
C
= 390 pF,
R
= 10 Ω,
D
See Figure 1
L
Transition time, high-to-low-level output
30
ns
Propagation delay time, low-to-high-level output
Propagation delay time, high-to-low-level output
10
10
65
ns
50
ns
3–3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
PARAMETER MEASUREMENT INFORMATION
≤ 10 ns
≤ 10 ns
3 V
0 V
5 V
20 V
Input
90%
1.5 V
90%
1.5 V
10%
10%
DHL
V
CC1
V
CC2
0.5 µs
Input
t
t
PHL
PHL
Pulse
Generator
(see Note A)
R
t
t
D
TLH
Output
t
THL
C
= 390 pF
(see Note B)
L
V
OH
–3 V
t
DLH
GND
V
V
CC2
–3V
CC2
Output
2.4 V
2 V
2 V
V
OL
VOLTAGE WAVEFORMS
TEST CIRCUIT
NOTES: A. The pulse generator has the following characteristics: PRR = 1 MHz, Z ≈ 50 Ω.
O
B.
C includes probe and jig capacitance.
L
Figure 1. Test Circuit and Voltage Waveforms, Each Driver
TYPICAL CHARACTERISTICS
LOW-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT CURRENT
V
0.5
0.4
0.3
CC2
V
V
= 5 V
= 20 V
V
V
= 5 V
= 20 V
CC1
CC2
CC1
CC2
V = 2 V
I
V = 0.8 V
I
V
–0.5
CC2
T
A
= 70°C
V
–1
CC2
T
A
= 25°C
T
= 70°C
= 0°C
A
T
= 0°C
A
V
–1.5
CC2
0.2
0.1
0
V
–2
CC2
T
A
V
–2.5
CC2
V
–3
– 0.01
CC2
–1
–10
–100
– 0.1
0
20
40
60
80
100
I
– High-Level Output Current – mA
I
– Low-Level Output Current – mA
OH
OL
Figure 2
Figure 3
3–4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
TYPICAL CHARACTERISTICS
POWER DISSIPATION (BOTH DRIVERS)
vs
VOLTAGE TRANSFER CHARACTERISTICS
FREQUENCY
1200
1000
800
24
20
16
12
8
V
V
= 5 V
V
V
= 5 V
= 20 V
CC1
CC1
CC2
= 20 V
CC2
No Load
T
A
Input: 3-V Square Wave
50% Duty Cycle
= 25°C
T
A
= 25°C
C
= 600 pF
L
C
= 1000 pF
L
600
400
C
= 2000 pF
L
C
= 4000 pF
L
200
0
4
C
= 400 pF
L
Allowable in P Package Only
0
0
0.5
1
1.5
2
2.5
10
20
40 100 200
400
1000
f – Frequency – kHz
V – Input Voltage – V
I
Figure 4
Figure 5
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
FREE-AIR TEMPERATURE
FREE-AIR TEMPERATURE
200
180
160
140
200
180
160
140
V
V
R
= 5 V
= 20 V
= 10 Ω
CC1
CC2
D
C
= 4000 pF
L
See Figure 1
C
= 4000 pF
L
V
V
R
= 5 V
= 20 V
= 10 Ω
CC1
CC2
D
120
100
120
100
See Figure 1
C
= 2000 pF
L
C
C
C
= 2000 pF
= 1000 pF
= 390 pF
L
L
L
80
80
C
C
= 1000 pF
= 390 pF
L
L
60
40
20
0
60
40
20
0
C
= 200 pF
C = 200 pF
L
L
C
= 50 pF
L
C
= 50 pF
60
L
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
70
80
T
A
– Free-Air Temperature – °C
T
A
– Free-Air Temperature – °C
Figure 6
Figure 7
3–5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
TYPICAL CHARACTERISTICS
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
V
SUPPLY VOLTAGE
V
SUPPLY VOLTAGE
CC2
CC2
200
180
160
140
200
180
160
140
V
R
= 5 V
= 10 Ω
= 25°C
CC1
D
V
R
= 5 V
= 10 Ω
= 25°C
CC1
D
C
= 4000 pF
L
T
A
T
A
See Figure 1
See Figure 1
C
= 4000 pF
L
120
100
120
100
C
= 2000 pF
L
C
= 2000 pF
L
80
80
C
= 1000 pF
= 390 pF
L
C = 1000 pF
L
60
40
20
0
60
40
20
0
C
= 200 pF
C
L
L
C = 390 pF
L
C
= 200 pF
L
C
= 50 pF
20
C
= 50 pF
20
L
L
0
5
10
15
25
0
5
10
15
25
V
CC2
– Supply Voltage – V
V
CC2
– Supply Voltage – V
Figure 8
Figure 9
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
LOAD CAPACITANCE
LOAD CAPACITANCE
200
200
180
160
140
V
V
= 5 V
= 20 V
= 25°C
V
V
= 5 V
= 20 V
= 25°C
CC1
CC2
CC1
CC2
180
160
140
T
T
A
A
See Figure 1
See Figure 1
R
= 24 Ω
R = 24 Ω
D
D
R
= 10 Ω
120
100
120
100
D
R
= 10 Ω
D
80
80
R
= 0
D
60
40
20
0
60
40
R
= 0
D
20
0
0
1000
2000
3000
4000
0
1000
2000
3000
4000
C
– Load Capacitance – pF
C – Load Capacitance – pF
L
L
Figure 10
Figure 11
NOTE: For R = 0, operation with C > 2000 pF violates absolute maximum current rating.
D
L
3–6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
THERMAL INFORMATION
power dissipation precautions
Significant power may be dissipated in the SN75372 driver when charging and discharging high-capacitance
loads over a wide voltage range at high frequencies. Figure 5 shows the power dissipated in a typical SN75372
as a function of load capacitance and frequency. Average power dissipated by this driver is derived from the
equation
P
= P
+ P
= P
C(AV) S(AV)
T(AV)
DC(AV)
where P
is the steady-state power dissipation with the output high or low, P
is the power level during
DC(AV)
C(AV)
charging or discharging of the load capacitance, and P
is the power dissipation during switching between
S(AV)
the low and high levels. None of these include energy transferred to the load, and all are averaged over a full
cycle.
The power components per driver channel are
t
HL
t
LH
P
t
+ P t
L L
H H
P
P
=
DC(AV)
T
2
C V
P
f
C(AV)
C
t
H
t
+ P
T
t
HL HL
t
L
LH LH
P
S(AV)
=
T = 1/f
where the times are as defined in Figure 14.
Figure 12. Output Voltage Waveform
P , P , P , and P are the respective instantaneous levels of power dissipation, C is the load capacitance.
L
H
LH
HL
V is the voltage across the load capacitance during the charge cycle shown by the equation
C
V = V
– V
OL
C
OH
P
may be ignored for power calculations at low frequencies.
S(AV)
In the following power calculation, both channels are operating under identical conditions:
=19.2 V and V = 0.15 V with V = 5 V, V = 20 V, V = 19.05 V, C = 1000 pF, and the
V
OH
OL
CC1
CC2
C
duty cycle = 60%. At 0.5 MHz, P
is negligible and can be ignored.
is negligible and can be ignored. When the output voltage is high, I
S(AV)
CC2
On a per-channel basis using data sheet values,
0 mA
2
16 mA
2
2 mA
2
7 mA
2
P
(5 V)
(20 V)
(0.6)
(5 V)
(20 V)
(0.4)
DC(AV)
P
= 47 mW per channel
DC(AV)
Power during the charging time of the load capacitance is
2
P
= (1000 pF) (19.05 V) (0.5 MHz) = 182 mW per channel
C(AV)
Total power for each driver is
= 47 mW + 182 mW = 229 mW
P
T(AV)
and total package power is
= (229) (2) = 458 mW.
P
T(AV)
3–7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
APPLICATION INFORMATION
driving power MOSFETs
The drive requirements of power MOSFETs are much lower than comparable bipolar power transistors. The
input impedance of a FET consists of a reverse biased PN junction that can be described as a large capacitance
in parallel with a very high resistance. For this reason, the commonly used open-collector driver with a pullup
resistor is not satisfactory for high-speed applications. In Figure 12(a), an IRF151 power MOSFET switching
an inductive load is driven by an open-collector transistor driver with a 470-Ω pullup resistor. The input
capacitance (C ) specification for an IRF151 is 4000 pF maximum. The resulting long turn-on time due to the
iss
combination of C and the pullup resistor is shown in Figure 12(b).
iss
48 V
M
5 V
4
3
470 Ω
4
8
1
7
6
1/2 SN75447
2
1
0
IRF151
3
5
TLC555P
0
0.5
1
1.5
2
2.5
3
2
t – Time – µs
(b)
(a)
Figure 13. Power MOSFET Drive Using SN75447
3–8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
APPLICATION INFORMATION
A faster, more efficient drive circuit uses an active pullup as well as an active pulldown output configuration,
referred to as a totem-pole output. The SN75372 driver provides the high speed, totem-pole drive desired in
an application of this type, see Figure 13(a). The resulting faster switching speeds are shown in Figure 13(b).
48 V
5 V
M
4
4
8
3
2
1
0
7
6
3
5
TLC555P
IRF151
1/2 SN75372
2
1
0
0.5
1
1.5
2
2.5
3
t – Time – µs
(b)
(a)
Figure 14. Power MOSFET Drive Using SN75372
Power MOSFET drivers must be capable of supplying high peak currents to achieve fast switching speeds as
shown by the equation
VC
I
pk
t
r
where C is the capacitive load, and t is the desired drive time. V is the voltage that the capacitance is charged
r
to. In the circuit shown in Figure 13(a), V is found by the equation
V = V
– V
OL
OH
Peak current required to maintain a rise time of 100 ns in the circuit of Figure 13(a) is
9
(3 0)4(10
)
I
120 mA
PK
9
100(10
)
Circuit capacitance can be ignored because it is very small compared to the input capacitance of the IRF151.
With a V of 5 V, and assuming worst-cast conditions, the gate drive voltage is 3 V.
CC
For applications in which the full voltage of V
MOSFET driver should be used.
must be supplied to the MOSFET gate, the SN75374 quad
CC2
3–9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
3–10
IMPORTANT NOTICE
Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor
product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current and complete.
TI warrants performance of its semiconductor products and related software to the specifications applicable at
the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are
utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each
device is not necessarily performed, except those mandated by government requirements.
Certain applications using semiconductor products may involve potential risks of death, personal injury, or
severe property or environmental damage (“Critical Applications”).
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED
TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER
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Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI
products in such applications requires the written approval of an appropriate TI officer. Questions concerning
potential risk applications should be directed to TI through a local SC sales office.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards should be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance, customer product design, software performance, or
infringement of patents or services described herein. Nor does TI warrant or represent that any license, either
express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property
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or services might be or are used.
Copyright 1998, Texas Instruments Incorporated
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