TAS5404-Q1 [TI]

具有 I2C 诊断和负载突降保护功能的汽车类 26W、4 通道、6V 至 18V 模拟单端输入 D 类音频放大器;
TAS5404-Q1
型号: TAS5404-Q1
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

具有 I2C 诊断和负载突降保护功能的汽车类 26W、4 通道、6V 至 18V 模拟单端输入 D 类音频放大器

放大器 音频放大器
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TAS5404-Q1  
SLOS918A AUGUST 2015REVISED OCTOBER 2015  
TAS5404-Q1: 26-W Analog Single-Ended Input 4-Channel Class-D Amp with Load Dump  
Protection and I2C Diagnostics  
1 Features  
2 Applications  
OEM or retail head units where feature densities  
and system configurations require high efficiency  
in the audio power amplifier.  
1
TAS5404-Q1 – Single-Ended Input  
Four-Channel Class-D Power Amplifier  
Four Analog Inputs, Four BTL Power Outputs  
Typical Output Power at 10% THD+N  
3 Description  
26 W/Ch Into 4 Ω at 14.4 V  
45 W/Ch Into 2 Ω at 14.4 V  
The TAS5404-Q1 device is a four-channel class-D  
audio amplifier designed for use in automotive head  
units. The TAS5404-Q1 device provides four  
channels at 20 W continuously into 4 Ω at less than  
1% THD+N from a 14.4-Vdc supply when used with  
the application circuit. The input is configured as an  
analog single-ended interface. The patented PWM  
topology of the device provides dramatic  
improvements in efficiency and audio performance  
over traditional linear amplifier solutions. The  
improvement in efficiency and audio performance  
reduces the power dissipated by the amplifier by a  
factor of ten under typical music playback conditions.  
The device incorporates all the required functions  
required by the OEM application. The built-in load  
diagnostic functions for detecting and diagnosing  
disconnected speakers help reduce test time during  
the manufacturing process.  
Channels Can Be Paralleled (PBTL) for High-  
Current Applications  
THD+N < 0.02%, 1 kHz, 1 W Into 4 Ω  
Patented Pop-and-Click-Reduction Technology  
Soft Muting With Gain Ramp Control  
Common-Mode Ramping  
Patented AM Interference Avoidance  
Patented Cycle-by-Cycle Current Limit  
75dB PSRR  
Four-Address I2C Serial Interface for Device  
Configuration and Control  
Channel Gains: 12 dB, 20 dB, 26 dB, 32 dB  
Load Diagnostic Functions:  
Device Information(1)  
Output Open and Shorted Load  
Output-to-Power and Output-to-Ground Shorts  
Patented Tweeter Detection  
PART NUMBER  
PACKAGE  
BODY SIZE (NOM)  
TAS5404-Q1  
HTQFP (64)  
14.00 mm × 14.00 mm  
Protection and Monitoring Functions:  
(1) For all available packages, see the orderable addendum at  
the end of the datasheet.  
Short-Circuit Protection  
Load-Dump Protection to 50 V  
Efficiency  
Four Channels at 4 Ω Each  
Fortuitous Open-Ground and Open-Power  
Tolerant  
100  
90  
80  
70  
60  
50  
40  
30  
20  
Patented Output DC Level Detection While  
Music Playing  
Overtemperature Protection  
Overvoltage and Undervoltage Conditions  
Clip Detection  
64-Pin QFP (PHD) Power Package With Heat  
Slug Up  
Designed for Automotive EMC Requirements  
Qualified According to AEC-Q100  
TAS5404-Q1 only  
10  
System Efficiency  
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32  
ISO9000:2002 TS16949-Certified  
Power per Channel (W)  
C001  
–40°C to 105°C Ambient Temperature Range  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
 
TAS5404-Q1  
SLOS918A AUGUST 2015REVISED OCTOBER 2015  
www.ti.com  
Table of Contents  
9.5 Programming........................................................... 24  
9.6 Register Maps......................................................... 26  
10 Application and Implementation........................ 31  
10.1 Application Information.......................................... 31  
10.2 Typical Application ................................................ 31  
11 Power Supply Recommendations ..................... 34  
12 Layout................................................................... 35  
12.1 Layout Guidelines ................................................. 35  
12.2 Layout Example .................................................... 35  
12.3 Thermal Consideration.......................................... 38  
1
2
3
4
5
6
7
Features.................................................................. 1  
Applications ........................................................... 1  
Description ............................................................. 1  
Revision History..................................................... 2  
Device Comparison Table..................................... 3  
Pin Configuration and Functions......................... 3  
Specifications......................................................... 5  
7.1 Absolute Maximum Ratings ...................................... 5  
7.2 ESD Ratings ............................................................ 5  
7.3 Recommended Operating Conditions ...................... 5  
7.4 Thermal Information.................................................. 6  
7.5 Electrical Characteristics........................................... 7  
7.6 Timing Requirements for I2C Interface Signals....... 10  
7.7 Typical Characteristics............................................ 11  
Parameter Measurement Information ................ 12  
Detailed Description ............................................ 13  
9.1 Overview ................................................................. 13  
9.2 Functional Block Diagram ....................................... 13  
9.3 Feature Descption................................................... 14  
9.4 Device Functional Modes........................................ 20  
12.4 Electrical Connection of Heat Slug and Heat  
Sink .......................................................................... 38  
12.5 EMI Considerations............................................... 38  
13 Device and Documentation Support ................. 40  
13.1 Device Support...................................................... 40  
13.2 Community Resources.......................................... 40  
13.3 Trademarks........................................................... 40  
13.4 Electrostatic Discharge Caution............................ 40  
13.5 Glossary................................................................ 40  
8
9
14 Mechanical, Packaging, and Orderable  
Information ........................................................... 40  
4 Revision History  
Changes from Original (August 2015) to Revision A  
Page  
Changed the data sheet from Product Preview to Production Data....................................................................................... 1  
2
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Product Folder Links: TAS5404-Q1  
 
TAS5404-Q1  
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SLOS918A AUGUST 2015REVISED OCTOBER 2015  
5 Device Comparison Table  
PART NUMBER  
TAS5404-Q1  
MINIMUM POWER SUPPLY VOLTAGE  
MAXIMUM POWER SUPPLY VOLTAGE  
5.6 VDC  
6 VDC  
18 VDC  
24 VDC  
TAS5414C-Q1  
6 Pin Configuration and Functions  
Package  
64-Pin QFP  
(Top View)  
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TAS5404-Q1  
SLOS918A AUGUST 2015REVISED OCTOBER 2015  
www.ti.com  
Pin Functions  
NAME  
A_BYP  
PIN  
TYPE(1)  
DESCRIPTION  
11  
PBY  
Bypass pin for the AVDD analog regulator  
Reports CLIP, OTW, or both. Also reports tweeter detection during tweeter  
mode. Open-drain  
CLIP_OTW  
6
DO  
CP  
41  
40  
42  
5
CP  
CP  
Top of main storage capacitor for charge pump (bottom goes to PVDD)  
Bottom of flying capacitor for charge pump  
CPC_BOT  
CPC_TOP  
D_BYP  
FAULT  
CP  
Top of flying capacitor for charge pump  
PBY  
DO  
Bypass pin for DVDD regulator output  
1
Global fault output (open drain): UV, OV, OTSD, OCSD, DC  
3, 7, 8, 9, 12, 14, 16, 17,  
21, 22, 23, 24, 25, 26, 30,  
31, 32, 35, 38, 39, 43, 46,  
49, 50, 51, 55, 56, 57, 58,  
59, 60  
GND  
GND  
Ground  
I2C_ADDR  
IN1_P  
62  
AI  
AI  
I2C address bit  
13  
Non-inverting analog input for channel 1  
Non-inverting analog input for channel 2  
Non-inverting analog input for channel 3  
Non-inverting analog input for channel 4  
Signal return for the four analog channel inputs  
Gain ramp control: mute (low), play (high)  
Oscillator input from master or output to slave amplifiers  
– polarity output for bridge 1  
IN2_P  
15  
AI  
IN3_P  
19  
AI  
IN4_P  
20  
AI  
IN_M  
18  
ARTN  
AI  
MUTE  
2
OSC_SYNC  
OUT1_M  
OUT1_P  
OUT2_M  
OUT2_P  
OUT3_M  
OUT3_P  
OUT4_M  
OUT4_P  
PVDD  
61  
DI/DO  
PO  
PO  
PO  
PO  
PO  
PO  
PO  
PO  
PWR  
AI  
48  
47  
+ polarity output for bridge 1  
45  
– polarity output for bridge 2  
44  
+ polarity output for bridge 2  
37  
– polarity output for bridge 3  
36  
+ polarity output for bridge 3  
34  
– polarity output for bridge 4  
33  
+ polarity output for bridge 4  
27, 28, 29, 52, 53, 54  
PVDD supply  
REXT  
10  
64  
63  
4
Precision resistor pin to set analog reference  
I2C clock input from system I2C master  
I2C data I/O for communication with system I2C master  
Active-low STANDBY pin. Standby (low), power up (high)  
SCL  
DI  
SDA  
DI/DO  
DI  
STANDBY  
(1) DI = digital input, DO = digital output, AI = analog input, ARTN = analog signal return, PWR = power supply, PBY = power bypass, PO =  
power output, GND = ground, CP = charge pump.  
4
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SLOS918A AUGUST 2015REVISED OCTOBER 2015  
7 Specifications  
7.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
–0.3  
–0.3  
–1  
MAX  
18  
UNIT  
V
PVDD  
DC supply voltage range  
DC supply voltage range  
Pulsed supply voltage range  
Supply voltage ramp rate  
Relative to GND  
PVDDMAX  
PVDDPULSED  
PVDDRAMP  
t 60 s exposure  
t 100 ms exposure  
30  
V
50  
V
15  
V/ms  
Externally imposed dc supply current per PVDD or GND  
pin  
IPVDD  
±12  
A
IPVDD_MAX  
IO  
Pulsed supply current per PVDD pin (one shot)  
Maximum allowed DC current per output pin  
Pulsed output current per output pin (single pulse)  
Maximum current, all digital and analog input pins(3)  
Maximum current on MUTE pin  
t < 100 ms  
17  
±13.5  
±17  
±1  
A
A
(2)  
IO_MAX  
t < 100 ms  
A
IIN_MAX  
DC or pulsed  
DC or pulsed  
mA  
mA  
mA  
IMUTE_MAX  
IIN_ODMAX  
±20  
7
Maximum sink current for open-drain pins  
Input voltage range for pin relative to GND (SCL, SDA,  
I2C_ADDR pins)  
Supply voltage range:  
6 V < PVDD < 18 V  
VLOGIC  
–0.3  
–0.3  
–0.3  
–0.3  
6
V
V
V
Supply voltage range:  
6 V < PVDD < 18 V  
VMUTE  
Voltage range for MUTE pin relative to GND  
Input voltage range for STANDBY pin  
7.5  
5.5  
Supply voltage range:  
6 V < PVDD < 18 V  
VSTANDBY  
Supply voltage range:  
6 V < PVDD < 18 V  
VOSC_SYNC  
VGND  
Input voltage range for OSC_SYNC pin relative to GND  
Maximum voltage between GND pins  
3.6  
±0.3  
1.9  
V
V
Supply voltage range:  
6 V < PVDD < 18 V  
VAIN_AC_MAX  
Maximum ac-coupled input voltage(3), analog input pins  
Vrms  
TJ  
Maximum operating junction temperature range  
Storage temperature  
–55  
–55  
150  
150  
°C  
°C  
Tstg  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum- rated conditions for extended periods may affect device reliability.  
(2) Pulsed current ratings are maximum survivable currents externally applied to the TAS5404-Q1 device. The TAS5404-Q1 device can  
encounter high currents during reverse-battery, fortuitous open-ground, and fortuitous open-supply fault conditions.  
(3) See the Application Information section for information on analog input voltage and ac coupling.  
7.2 ESD Ratings  
VALUE  
±2500  
±750  
UNIT  
Human body model (HBM), per AEC Q100-002(1)  
Corner pins excluding SCL  
V
V(ESD)  
Electrostatic discharge  
Charged device model (CDM), per AEC  
Q100-011 PHD Package  
All pins (including SCL) except  
CP and CP_Top  
±600  
±400  
V
CP and CP_Top pins  
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.  
7.3 Recommended Operating Conditions(1)  
MIN  
6
NOM  
MAX  
UNIT  
V
PVDDOP  
DC supply voltage range relative to GND  
Analog audio input signal level (TAS5414C-Q1)  
Ambient temperature  
14.4  
18  
0.25–1(3)  
105  
(2)  
VAIN  
AC-coupled input voltage  
0
Vrms  
°C  
TA  
–40  
(1) The Recommended Operating Conditions table specifies only that the TAS5404-Q1 device is functional in the given range. See the  
Electrical Characteristics table for specified performance limits.  
(2) Signal input for full unclipped output with gains of 32 dB, 26 dB, 20 dB, and 12 dB  
(3) Maximum recommended input voltage is determined by the gain setting.  
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Recommended Operating Conditions(1) (continued)  
MIN  
NOM  
MAX  
UNIT  
An adequate heat sink is required  
to keep TJ within specified range.  
TJ  
Junction temperature  
–40  
115  
°C  
RL  
Nominal speaker load impedance  
2
3
4
Ω
VPU  
Pullup voltage supply (for open-drain logic outputs)  
3.3 or 5  
5.5  
50  
10  
V
Resistor connected between open-  
drain logic output and VPU supply  
RPU_EXT  
RPU_I2C  
RI2C_ADD  
RREXT  
External pullup resistor on open-drain logic outputs  
I2C pullup resistance on SDA and SCL pins  
10  
1
kΩ  
kΩ  
4.7  
20  
Total resistance of voltage divider for I2C address  
slave 1 or slave 2, connected between D_BYP and  
GND pins  
10  
50  
kΩ  
External resistance on REXT pin  
1% tolerance required  
19.8  
10  
20.2  
120  
kΩ  
CD_BYP  
CA_BYP  
,
External capacitance on D_BYP and A_BYP pins  
nF  
COUT  
CIN  
External capacitance to GND on OUT_X pins  
150  
680  
nF  
External capacitance to analog input pin in series  
with input signal  
0.47  
μF  
CFLY  
CP  
Flying capacitor on charge pump  
Charge pump capacitor  
0.47  
0.47  
100  
1
1
1.5  
1.5  
μF  
μF  
nF  
pF  
50 V required for load dump  
CMUTE  
MUTE pin capacitor  
220  
75  
1000  
COSCSYNC_MAX  
Allowed loading capacitance on OSC_SYNC pin  
7.4 Thermal Information  
THERMAL METRIC(1)  
TAS5404-Q1  
UNIT  
Junction-to-case (heat slug) thermal  
resistance  
RθJC  
1.2  
°C/W  
This TAS5404-Q1 device is not intended to be used without a heatsink.  
Therefore, RθJA is not specified. Refer to the Thermal Consideration  
section.  
RθJA  
Junction-to-ambient thermal resistance  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report, SPRA953.  
6
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SLOS918A AUGUST 2015REVISED OCTOBER 2015  
7.5 Electrical Characteristics  
Test conditions (unless otherwise noted): TCase = 25°C, PVDD = 14.4 V, RL = 4 Ω, fS = 417 kHz, Pout = 1 W/ch, Rext = 20 kΩ,  
AES17 filter, default I2C settings, master-mode operation (see Figure 20)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
OPERATING CURRENT  
IPVDD_IDLE  
All four channels in MUTE mode  
170  
93  
2
220  
mA  
PVDD idle current  
IPVDD_Hi-Z  
All four channels in Hi-Z mode  
IPVDD_STBY  
PVDD standby current  
STANDBY mode, TJ 85°C  
10  
μA  
OUTPUT POWER  
4 Ω, THD+N 1%, 1 kHz, Tc = 75°C  
4 Ω, THD+N = 10%, 1 kHz, Tc = 75°C  
4 Ω, square wave, 1 kHz, Tc = 75°C  
2 Ω, THD+N = 1%, 1 kHz, Tc = 75°C  
2 Ω, THD+N = 10%, 1 kHz, Tc = 75°C  
2 Ω, square wave, 1 kHz, Tc = 75°C  
20  
26  
43  
38  
45  
70  
25  
40  
POUT  
Output power per channel  
Power efficiency  
W
4 channels operating, 20-W output power/ch, L = 10 μH,  
TJ 85°C  
EFFP  
AUDIO PERFORMANCE  
90%  
VNOISE  
Noise voltage at output  
Zero input, and A-weighting  
60  
85  
100  
μV  
P = 1 W, f = 1 kHz, enhanced crosstalk enabled through  
I2C (reg. 0x10)  
Channel crosstalk  
70  
dB  
Common-mode rejection ratio (TAS5424C-  
Q1)  
CMRR5424  
f = 1 kHz, 1 Vrms referenced to GND, G = 26 dB  
60  
60  
75  
dB  
dB  
PSRR  
Power-supply rejection ratio  
PVDD = 14.4 Vdc + 1 Vrms, f = 1 kHz  
P = 1 W, f = 1 kHz  
75  
0.02%  
357  
THD+N  
Total harmonic distortion + noise  
0.1%  
378  
442  
530  
106  
336  
392  
470  
63  
Switching frequency selectable for AM interference  
avoidance  
fS  
Switching frequency  
417  
kHz  
500  
RAIN  
Analog input resistance  
Internal shunt resistance on each input pin  
85  
kΩ  
Vrms  
V
AC-coupled common-mode input voltage (zero  
differential input)  
VIN_CM  
VCM_INT  
Common-mode input voltage  
Internal common-mode input bias voltage  
1.3  
Internal bias applied to IN_M pin  
3.3  
12  
20  
26  
32  
0
11  
19  
25  
31  
–1  
13  
21  
27  
33  
1
Source impedance = 0 Ω, gain measurement taken at 1  
W of power per channel  
G
Voltage gain (VO/VIN  
)
dB  
dB  
GCH  
Channel-to-channel variation  
Any gain commanded  
PWM OUTPUT STAGE  
RDS(on)  
FET drain-to-source resistance  
Output offset voltage  
Not including bond wire resistance, TJ = 25°C  
Zero input signal, G = 26 dB  
65  
90  
mΩ  
VO_OFFSET  
±10  
±50  
mV  
PVDD OVERVOLTAGE (OV) PROTECTION  
VOV_SET  
PVDD overvoltage shutdown set  
PVDD overvoltage shutdown clear  
24.6  
24.4  
26.4  
25.9  
28.2  
27.4  
V
V
VOV_CLEAR  
PVDD UNDERVOLTAGE (UV) PROTECTION  
VUV_SET  
PVDD undervoltage shutdown set  
PVDD undervoltage shutdown clear  
4.9  
6.2  
5.3  
6.6  
5.5  
6.9  
V
V
VUV_CLEAR  
AVDD  
VA_BYP  
A_BYP pin voltage  
A_BYP UV voltage  
6.5  
4.8  
5.3  
V
V
V
VA_BYP_UV_SET  
VA_BYP_UV_CLEAR Recovery voltage A_BYP UV  
DVDD  
VD_BYP  
D_BYP pin voltage  
3.3  
V
POWER-ON RESET (POR)  
I2C active above this voltage  
VPOR  
PVDD voltage for POR  
PVDD recovery hysteresis voltage for POR  
4
V
V
VPOR_HY  
0.1  
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Electrical Characteristics (continued)  
Test conditions (unless otherwise noted): TCase = 25°C, PVDD = 14.4 V, RL = 4 Ω, fS = 417 kHz, Pout = 1 W/ch, Rext = 20 kΩ,  
AES17 filter, default I2C settings, master-mode operation (see Figure 20)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
REXT  
VREXT  
Rext pin voltage  
1.27  
V
CHARGE PUMP (CP)  
VCPUV_SET  
CP undervoltage  
4.8  
4.9  
V
V
VCPUV_CLEAR  
Recovery voltage for CP UV  
OVERTEMPERATURE (OT) PROTECTION  
TOTW1_CLEAR  
96  
112  
122  
128  
138  
°C  
°C  
TOTW1_SET  
/
106  
TOTW2_CLEAR  
Junction temperature for overtemperature  
warning  
TOTW2_SET  
/
116  
126  
136  
130  
132  
142  
152  
150  
148  
158  
168  
170  
°C  
°C  
°C  
°C  
TOTW3_CLEAR  
TOTW3_SET  
/
TOTSD_CLEAR  
Junction temperature for overtemperature  
shutdown  
TOTSD  
Junction temperature for overtemperature  
foldback  
TFB  
Per channel  
CURRENT LIMITING PROTECTION  
ILIM  
Current limit (load current)  
8.5  
9.8  
A
A
OVERCURRENT (OC) SHUTDOWN PROTECTION  
IMAX  
Maximum current (peak output current)  
Any short to supply, ground, or other channels  
TWEETER DETECT  
ITH_TW  
Load-current threshold for tweeter detect  
330  
445  
2.1  
560  
mA  
A
ILIM_TW  
Load-current limit for tweeter detect  
STANDBY MODE  
VIH  
STANDBY input voltage for logic-level high  
STANDBY input voltage for logic-level low  
STANDBY pin current  
2
V
V
VIL  
0.7  
0.2  
ISTBY  
0.1  
100  
μA  
MUTE MODE  
GMUTE  
MUTE pin 0.5 V for 200 ms or I2C Mute Enabled  
Output attenuation  
dB  
s
DC OFFSET DETECT  
VTH_DC_TOL DC offset detect threshold tolerance  
25%  
DC offset detect step-response time for four  
channels  
tDCD  
5.3  
CLIP_OTW REPORT  
CLIP_OTW pin output voltage for logic level  
VOH_CLIPOTW  
2.4  
V
V
high (open-drain logic output)  
External 47-kΩ pullup resistor to 3 V to 5.5 V  
CLIP_OTW pin output voltage for logic level  
low (open-drain logic output)  
VOL_CLIPOTW  
0.5  
20  
CLIP_OTW signal delay when output  
clipping detected  
tDELAY_CLIPDET  
FAULT REPORT  
VOH_FAULT  
μs  
FAULT pin output voltage for logic-level high  
(open-drain logic output)  
2.4  
External 47-kΩ pullup resistor to 3 V to 5.5 V  
V
FAULT pin output voltage for logic-level low  
(open-drain logic output)  
VOL_FAULT  
0.5  
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Electrical Characteristics (continued)  
Test conditions (unless otherwise noted): TCase = 25°C, PVDD = 14.4 V, RL = 4 Ω, fS = 417 kHz, Pout = 1 W/ch, Rext = 20 kΩ,  
AES17 filter, default I2C settings, master-mode operation (see Figure 20)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
OPEN, SHORT DIAGNOSTICS  
Maximum resistance to detect a short from  
OUT pin(s) to PVDD or ground  
RS2P, RS2G  
200  
1300  
1.5  
Ω
Ω
Ω
Minimum load resistance to detect open  
circuit  
ROPEN_LOAD  
RSHORTED_LOAD  
Including speaker wires  
300  
0.5  
740  
1
Maximum load resistance to detect short  
circuit  
Including speaker wires  
I2C ADDRESS DECODER  
Time delay to latch I2C address after POR  
tLATCH_I2CADDR  
300  
0%  
μs  
Voltage on I2C_ADDR pin for address 0  
Voltage on I2C_ADDR pin for address 1  
Voltage on I2C_ADDR pin for address 2  
Voltage on I2C_ADDR pin for address 3  
Connect to GND  
0%  
25%  
55%  
85%  
15%  
45%  
35%  
65%  
100%  
External resistors in series between D_BYP and GND as  
a voltage divider  
VI2C_ADDR  
VD_BYP  
75%  
Connect to D_BYP  
100%  
I2C  
Power-on hold time before I2C  
communication  
tHOLD_I2C  
STANDBY high  
1
ms  
fSCL  
VIH  
VIL  
SCL clock frequency  
400  
5.5  
1.1  
kHz  
V
SCL pin input voltage for logic-level high  
SCL pin input voltage for logic-level low  
2.1  
RPU_I2C = 5-kΩ pullup, supply voltage = 3.3 V or 5 V  
–0.5  
V
I2C read, RI2C = 5-kΩ pullup,  
supply voltage = 3.3 V or 5 V  
VOH  
VO  
SDA pin output voltage for logic-level high  
SDA pin output voltage for logic-level low  
SDA pin input voltage for logic-level high  
2.4  
V
V
V
I2C read, 3-mA sink current  
0.4  
5.5  
I2C write, RI2C = 5-kΩ pullup,  
supply voltage = 3.3 V or 5 V  
VIH  
2.1  
I2C write, RI2C = 5-kΩ pullup,  
supply voltage = 3.3 V or 5 V  
VIL  
SDA pin input voltage for logic-level low  
Capacitance for SCL and SDA pins  
–0.5  
1.1  
10  
V
C I  
pF  
OSCILLATOR  
OSC_SYNC pin output voltage for logic-  
level high  
VOH  
VOL  
VIH  
VIL  
2.4  
2
V
V
V
V
I2C_ADDR pin set to MASTER mode  
I2C_ADDR pin set to SLAVE mode  
OSC_SYNC pin output voltage for logic-  
level low  
0.5  
0.8  
OSC_SYNC pin input voltage for logic-level  
high  
OSC_SYNC pin input voltage for logic-level  
low  
I2C_ADDR pin set to MASTER mode, fS = 500 kHz  
I2C_ADDR pin set to MASTER mode, fS = 417 kHz  
I2C_ADDR pin set to MASTER mode, fS = 357 kHz  
3.76  
3.13  
2.68  
4
3.33  
2.85  
4.24  
3.63  
3
fOSC_SYNC  
OSC_SYNC pin clock frequency  
MHz  
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7.6 Timing Requirements for I2C Interface Signals  
over recommended operating conditions (unless otherwise noted)  
MIN NOM  
MAX  
300  
UNIT  
ns  
tr  
Rise time for both SDA and SCL signals  
Fall time for both SDA and SCL signals  
SCL pulse duration, high  
tf  
300  
ns  
tw(H)  
tw(L)  
tsu(2)  
th(2)  
tsu(1)  
th(1)  
tsu(3)  
CB  
0.6  
1.3  
0.6  
0.6  
100  
0(1)  
0.6  
μs  
SCL pulse duration, low  
μs.  
μs  
Setup time for START condition  
START condition hold time until generation of first clock pulse  
Data setup time  
μs  
ns  
Data hold time  
ns  
Setup time for STOP condition  
Load capacitance for each bus line  
μs  
400  
pF  
(1) The TAS5404-Q1 device must internally provide a hold time of at least 300 ns for the SDA signal to bridge the undefined region of the  
falling edge of SCL.  
tw(H)  
tw(L)  
tr  
tf  
SCL  
tsu1  
th1  
SDA  
T0027-01  
Figure 1. SCL and SDA Timing  
SCL  
t(buf)  
th2  
tsu2  
tsu3  
SDA  
Start  
Condition  
Stop  
Condition  
T0028-01  
Figure 2. Timing for Start and Stop Conditions  
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7.7 Typical Characteristics  
10  
1
10  
1
0.1  
0.01  
0.1  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
Power (W)  
Power (W)  
C004  
C005  
Figure 3. THD+N vs BTL Output Power at 1 kHz into 4 Ω  
Figure 4. THD+N vs PBTL Output Power at 1 kHz into 2 Ω  
10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-100  
1
0.1  
0.01  
20  
200  
2k  
Frequency (Hz)  
20k  
20  
200  
2k  
20k  
Frequency (Hz)  
C003  
C006  
Figure 5. THD+N vs Frequency at 1 W into 4 Ω  
Figure 6. Crosstalk vs Frequency  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TAS5404-Q1 only  
System Efficiency  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32  
Power per Channel (W)  
C001  
Figure 7. Noise FFT  
Figure 8. Efficiency  
Four Channels at 4 Ω Each  
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Typical Characteristics (continued)  
14  
12  
10  
8
6
4
2
0
0
10  
20  
30  
Output Power per Channel  
C002  
Figure 9. Device Power Dissipation  
Four Channels at 4 Ω Each  
8 Parameter Measurement Information  
The parameters for the TAS5404-Q1 device were measured using the circuit in Figure 20.  
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9 Detailed Description  
9.1 Overview  
The TAS5404-Q1 device is a monolithic, four channel, audio amplifier with special features that are necessary for  
OEM automotive audio systems. The design of the TAS5404-Q1 device utilizes efficient, proprietary class-D  
technology developed by Texas Instruments. The technology of the TAS5404-Q1 device allows for reduced  
power consumption, reduced heat, and reduced peak currents in the electrical system. The TAS5404-Q1 device  
realizes an audio sound system design with smaller size and lower weight than class-AB solutions.  
The TAS5404-Q1 device has eight core design blocks:  
Preamplifier  
PWM  
Gate drive  
Power FETs  
Diagnostics  
Protection  
Power supply  
I2C serial communication bus  
9.2 Functional Block Diagram  
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9.3 Feature Descption  
9.3.1 Preamplifier  
The preamplifier is a high-input-impedance, low-noise, low-offset-voltage input stage with adjustable gain. The  
high input impedance allows the use of low-cost input capacitors while still achieving extended low-frequency  
response. A dedicated, internally regulated supply powers the preamplifier, giving it excellent noise immunity and  
channel separation. The preamplifier in the TAS5404-Q1 device also includes:  
1. Fast Start Up — The preamplifier will fast charge the input coupling capacitors at start up, which will allow  
for a fast turn-on without any pop or click.  
2. Mute Pop-and-Click Control — The TAS5404-Q1 device ramps the gain gradually when receiving a mute  
or play command. The starting or stopping of switching in a class-D amplifier can cause another form of click  
and pop. The TAS5404-Q1 device incorporates a patented method to reduce the pop energy during the  
switching startup and shutdown sequence. Fault conditions require a rapid protection response, which do not  
have time to ramp the gain down in a pop-free manner. The TAS5404-Q1 device transitions into Hi-Z mode  
when encountering an OV, UV, OC, OT, or DC Offset fault. Advanced circuitry will allow for a fast, pop-free  
shutdown when the /STANBY pin is pulled low.  
3. Gain Control — The gain is set for the four channels in the preamplifier through I2C control registers. The  
gain control is outside of the global feedback network of the TAS5404-Q1 device, thus allowing for stability of  
the system at all gain settings with properly loaded conditions. A line output gain of 12 dB is provided for  
driving external amplifiers.  
9.3.2 Pulse-Width Modulator (PWM)  
The PWM converts the analog signal from the preamplifier into a switched signal of varying duty cycle. The PWM  
is the critical stage that defines the class-D architecture. The modulator is an advanced design with high  
bandwidth, low noise, low distortion, excellent stability, and full 0 to 100% modulation capability. The patented  
PWM uses soft clipping to for improved audio performance at clipping.  
9.3.3 Gate Drive  
The gate driver accepts the low-voltage PWM signal and level-shifts it to drive a high-current, full-bridge, power  
FET stage. The TAS5404-Q1 device uses proprietary techniques to optimize EMI and audio performance. The  
high-side FET power supply is generated by the charge pump circuitry.  
9.3.4 Power FETs  
The BTL output for each channel comprises four rugged N-channel 30-V 65-mΩ FETs for high efficiency and  
maximum power transfer to the load. These FETs are designed to withstand large voltage transients during load  
dump.  
9.3.5 Load Diagnostics  
The TAS5404-Q1 device incorporates load diagnostic circuitry designed to help pinpoint the nature of output  
misconnections during installation. These are functions for detecting and determining the status of output  
connections. The following diagnostics are supported:  
Short to GND (S2G)  
Short to PVDD (S2P)  
Short across load (SL)  
Open load (OL)  
Tweeter detection  
Reporting to the system of the presence of any of the short or open conditions occurs through I2C register read.  
Determine the tweeter-detect status from the CLIP_OTW pin when properly configured.  
1. Output Short and Open Diagnostics — The TAS5404-Q1 device contains circuitry designed to detect  
shorts and open conditions on the outputs. Invocation of the load diagnostic function will automatically place  
the channel into Hi-Z mode. All pop-free transitions will occur before the load diagostics will start. The test  
has four phases and two levels of test during load diagnostics. In the full level, all channels must be in the Hi-  
Z state. Testing covers all four phases on each channel on all four channels at the same time. When fewer  
than four channels are in Hi-Z, the reduced level of test is the only available option. In the reduced level, the  
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Feature Descption (continued)  
only tests available are short to PVDD and short to GND. Load diagnostics can occur at anytime during  
operation of the TAS5404-Q1 device, by setting the proper bits in the control registers. Performance of the  
diagnostics is as shown in Figure 10. Figure 11 shows the impedance ranges for the open-load and shorted-  
load diagnostics. The results of the diagnostics are from the diagnostic register through I2C for each channel.  
With the default settings and MUTE capacitor, the S2G and S2P phases take approximately 20 ms each, the  
OL phase takes approximately 100 ms, and the SL takes approximately 230 ms. In I2C register 0x10, bit D4  
can extend the test time for S2P and S2G to 80 ms each. To prevent false S2G and S2P faults, the time  
extension is necessary if the output pins have a capacitance higher than 680 nF to ground.  
Figure 10. Load Diagnostics Sequence of Events  
Figure 11. Open- and Shorted-Load Detection  
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Feature Descption (continued)  
2. Tweeter Detection — Tweeter detection is an operating mode used to determine the proper connection of a  
frequency-dependent load (such as a speaker with a crossover). Tweeter detection is started through I2C,  
and individual testing of all four channels is recommended. Tweeter detection uses the average cycle-by-  
cycle current limit circuit (see CBC section) to measure the current delivered to the load. The proper  
implementation of the diagnostic function depends on the amplitude of a user-supplied test signal and on the  
impedance-versus-frequency curve of the acoustic load. The external system must generate a signal to  
which the load responds. The frequency and amplitude of the signal must be calibrated by the user to result  
in a current draw that is greater than the tweeter detection threshold when the load under test is present, and  
less than the detection threshold if the load is unconnected. The current level for the tweeter detection  
threshold, as well as the maximum current that can safely be delivered to a load when in tweeter-detection  
mode, is in the Electrical Characteristics section of the data sheet. Reporting of the tweeter-detection results  
is on the CLIP_OTW pin during the application of the test signal. With tweeter detection activated (indicating  
that the tested load is present), pulses on the CLIP_OTW pin begin to toggle. The pulses on the CLIP_OTW  
pins report low whenever the current exceeds the detection threshold, and the pin remains low until the  
current no longer exceeds the threshold. The minimum low-pulse period is equal to one period of the  
switching frequency. Having an input signal that increases the duration of detector activation (for example,  
increasing the amplitude of the input signal) increases the amount of time for which the pin reports low.  
NOTE  
Because tweeter detection is an alternate operating mode, place the channels to be tested  
in Play mode (through register 0x0C) after tweeter detection has been activated to  
commence the detection process. Additionally, set up the CLIP_OTW pin through register  
0x0A to report the results of tweeter detection.  
9.3.6 Protection and Monitoring  
1. Cycle-By-Cycle Current Limit (CBC) — The CBC current-limiting circuit terminates each PWM pulse to limit  
the output current flow to the average current limit (ILIM) threshold. The overall effect on the audio in the case  
of a current overload is quite similar to a voltage-clipping event, temporarily limiting power at the peaks of the  
musical signal and normal operation continues without disruption on removal of the overload. Premature  
shutdown does not occur in this condition. All four channels continue in play mode and pass signal.  
2. Overcurrent Shutdown (OCSD) — Under severe short-circuit events, such as a short to PVDD or ground,  
the TAS5404-Q1 device uses a peak-current detector, and the affected channel shuts down in 200 μs to 390  
μs if the conditions are severe enough. The shutdown speed depends on a number of factors, such as the  
impedance of the short circuit, supply voltage, and switching frequency. Only the shorted channels shut  
down in such a scenario. The user can restart the affected channel through I2C. An OCSD event activates  
the fault pin, and the I2C fault register saves a record of the affected channels. If the supply or ground short  
is strong enough to exceed the peak current threshold but not severe enough to trigger the OCSD, the peak  
current limiter prevents excess current from damaging the output FETs, and operation returns to normal after  
the short is removed.  
3. DC Offset Detect—the circuit detects a dc offset at the output of the amplifier continuously during normal  
operation. If the DC offset reaches the level defined in the I2C registers for the specified time period, the  
circuit triggers. By default, a DC offset detection event places the output in Hi-Z mode. Disabling and  
enabling the shutdown function is through I2C. If enabled, the triggered channel shuts down, but the others  
remain playing, but with the FAULT pin asserted. The DC offset level is defined in the I2C registers.  
4. Clip Detect—The clip detect circuit indicates the presence of a 100% duty-cycle PWM due to a clipped  
waveform. When this occurs, a signal passed to the CLIP_OTW pin asserts it until the 100% duty-cycle  
PWM signal is no longer present. All four channels connect to the same CLIP_OTW pin. Through I2C,  
change the CLIP_OTW signal clip-only, OTW-only, or both. A fourth mode, used only during diagnostics, is  
the option to report tweeter detection events on the CLIP_OTW pin (see the Tweeter Detection section). The  
microcontroller in the system can monitor the signal at the CLIP_OTW pin, and can have a configuration that  
reduces the volume to all four channels in an active clipping-prevention circuit.  
5. Overtemperature Warning (OTW), Overtemperature Shutdown (OTSD) and Thermal Foldback — By  
default, the CLIP_OTW pin setting indicates an OTW. The user can make changes through I2C commands. If  
selected to indicate a temperature warning, CLIP_OTW pin assertion occurs when the die temperature  
reaches warning level 1 as shown in the electrical specifications. The OTW has three temperature thresholds  
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Feature Descption (continued)  
with a 10°C hysteresis. I2C register 0x04 indicates each threshold in bits 5, 6, and 7. The TAS5404-Q1  
device still functions until the temperature reaches the OTSD threshold, at which time the outputs go into Hi-  
Z mode and the TAS5404-Q1 device asserts the FAULT pin. I2C is still active in the event of an OTSD, and  
the user can read the registers for faults, but all audio ceases abruptly. After the OTSD resets, turn the  
TAS5404-Q1 device back on through I2C. The OTW indication remains until the temperature drops below  
warning level 1. The thermal foldback decreases the channel gain.  
6. Undervoltage (UV) and Power-on-Reset (POR) — The undervoltage (UV) protection detects low voltages  
on PVDD, AVDD, and CP. In the event of an undervoltage, the TAS5404-Q1 device asserts the FAULT pin  
and updates the I2C registerd, depending on which voltage caused the event. Power-on reset (POR) occurs  
when PVDD drops low enough. A POR event causes the I2C to go into a high-impedance state. After the  
TAS5404-Q1 device recovers from the POR event, the device re-initialization occurs through I2C.  
7. Overvoltage (OV) and Load Dump — The OV protection detects high voltages on PVDD. If PVDD reaches  
the overvoltage threshold, the TAS5404-Q1 device asserts the FAULT pin iand updates the I2C register. The  
TAS5404-Q1 device can withstand 50-V load-dump voltage spikes.  
9.3.7 I2C Serial Communication Bus  
The TAS5404-Q1 device communicates with the system processor through the I2C serial communication bus as  
an I2C slave-only device. The processor can poll the device through I2C to determine the operating status. All  
reports of fault conditions and detections are through I2C. The TAS5404-Q1 device also has numerous features  
and operating conditions that can be set through I2C.  
The I2C bus allows control of the following configurations:  
Independent gain control of each channel. The gain can be set to 12 dB, 20 dB, 26 dB, and 32 dB.  
Select the AM non-interference switching frequency  
Select the functionality of the OTW_CLIP pin  
Enable or disable the dc-detect function with selectable threshold  
Place a channel in Hi-Z (switching stopped) mode (mute)  
Select tweeter detect, set the detection threshold, and initiate the function  
Initiate the open-load and shorted-load diagnostic  
Reset faults and return to normal switching operation from Hi-Z mode (unmute)  
In addition to the standard SDA and SCL pins for the I2C bus, the TAS5404-Q1 device includes a single pin that  
allows up to four devices to work together in a system with no additional hardware required for communication or  
synchronization. The I2C_ADDR pin sets the device in master or slave mode and selects the I2C address for that  
device. Tie the I2C_ADDR pin to DGND for master, to 1.2 Vdc for slave 1, to 2.4 Vdc for slave 2, and to D_BYP  
for slave 3. The OSC_SYNC pin is for synchronizing the internal clock oscillators to avoid beat frequencies. An  
external oscillator can be applied to the OSC_SYNC pin for external control of the switching frequency.  
Table 1. Table 7. I2C_ADDR Pin Connection  
I2C_ADDR VALUE  
0 (OSC MASTER)  
I2C_ADDR PIN CONNECTION  
I2C ADDRESSES  
0xD8/D9  
To SGND pin  
1 (OSC SLAVE1)  
2 (OSC SLAVE2)  
3 (OSC SLAVE3)  
35% DVDD (resistive voltage divider between D_BYP pin and SGND pin)(1)  
65% DVDD (resistive voltage divider between D_BYP pin and SGND pin)(1)  
To D_BYP pin  
0xDA/DB  
0xDC/DD  
0xDE/DF  
(1) TI recommends RI2C_ADDR resistors with 5% or better tolerance.  
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9.3.8 I2C Bus Protocol  
The TAS5404-Q1 device has a bidirectional serial control interface that is compatible with the Inter IC (I2C) bus  
protocol and supports 400-kbps data transfer rates for random and sequential write and read operations. The  
TAS5404-Q1 device is a slave-only device that does not support a multimaster bus environment or wait-state  
insertion. The control interface programs the registers of the device and reads device status.  
The I2C bus employs two signals, SDA (data) and SCL (clock), to communicate between integrated circuits in a  
system. Data transfer on the bus is serial, one bit at a time. The transfer of address and data is in byte (8-bit)  
format with the most-significant bit (MSB) transferred first. In addition, the receiving device acknowledges each  
byte transferred on the bus with an acknowledge bit. Each transfer operation begins with the master device  
driving a start condition on the bus and ends with the master device driving a stop condition on the bus. The bus  
uses transitions on the data terminal (SDA) while the clock is HIGH to indicate a start and stop conditions. A  
HIGH-to-LOW transition on SDA indicates a start, and a LOW-to-HIGH transition indicates a stop. Normal data-  
bit transitions must occur within the low time of the clock period. Figure 12 shows these conditions. The master  
generates the 7-bit slave address and the read/write bit to open communication with another device and then  
wait for an acknowledge condition. The TAS5404-Q1 holds SDA LOW during the acknowledge-clock period to  
indicate an acknowledgment. When the acknowledgment occurs, the master device transmits the next byte of the  
sequence. Each slave device is addressed by a unique 7-bit slave address plus R/W bit (1 byte). All compatible  
devices share the same signals through a bidirectional bus using a wired-AND connection. The SDA and SCL  
signals must have an external pullup resistor to set the HIGH level for the bus. Any number of bytes can be  
transmitted between start and stop conditions. When the last word transfers, the master device generates a stop  
condition to release the bus.  
8-Bit Register Data For  
Address (N)  
8-Bit Register Data For  
Address (N)  
R/  
W
8-Bit Register Address (N)  
7-Bit Slave Address  
A
A
A
A
SDA  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
SCL  
Start  
Stop  
T0035-01  
Figure 12. Typical I2C Sequence  
Use the I2C_ADDR pin (pin 2) to program the TAS5404-Q1 device for one of four addresses. These four  
addresses are licensed I2C addresses and do not conflict with other licensed I2C audio devices. The I2C master  
device uses addresses shown in Figure 12 to communicate. Transmission of read and write data can be through  
single-byte or multiple-byte data transfers.  
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9.3.9 Hardware Control Pins  
The TAS5404-Q1 device has four discrete hardware pins for real-time control and indication of device status:  
1. FAULT pin: This active-low open-drain output pin indicates the presence of a fault condition that requires the  
TAS5404-Q1 device to go into the Hi-Z mode. On assertion of the FAULT pin, the TAS5404-Q1 device has  
protected itself and the system from potential damage. Read the details of the fault through I2C with the  
exception of PVDD undervoltage faults below POR, in which case the I2C bus is no longer operational.  
However, the fault is still indicated due to FAULT pin assertion.  
2. CLIP_OTW pin: Configured through I2C, this active-low open-drain pin indicates one of the following  
conditions: overtemperature warning, the detection of clipping, or the logical OR of both of these conditions.  
During tweeter detect diagnostics, assertion of the CLIP_OTW pin also occurs when a tweeter is present.  
The CLIP_OTW pin can also indicate thermal foldback is active.  
3. MUTE pin: This active-low pin is used for hardware control of the mute-unmute function for all four channels.  
Capacitor CMUTE controls the time constant for the gain ramp required to produce a pop-and-click-free mute  
function. For pop-and-click-free operation, implementation of the mute function should be through I2C  
commands. The use of a hard mute with an external transistor does not ensure pop-and-click-free operation,  
and TI does not recommend it except as an emergency hard mute function in case of a loss of I2C control.  
The CMUTE capacitor cannot be shared between multiple devices.  
4. STANDBY pin: On assertion of this active-low pin, the TAS5404-Q1 device goes into a complete shutdown,  
and the typical current-draw limit is 2 μA, typical. STANDBY can be used to shut down the device rapidly. If  
all channels are in Hi-Z, the device enters standby in approximately 1 ms. If the channels are in play mode,  
the device enters standby in approximately 4.5 ms with a pop-and-click-free operation. All I2C register  
content is lost and the I2C bus goes into the high-impedance state on assertion of the STANDBY pin.  
9.3.10 AM Radio Avoidance  
To reduce interference in the AM radio band, the TAS5404-Q1 device has the ability to change the switching  
frequency through I2C commands. Table 2 lists the recommended frequencies. The fundamental frequency and  
the second harmonic straddle the AM radio band listed, which eliminates the tones that can be present due to  
demodulation of the switching frequency by the AM radio.  
Table 2. Recommended Switching Frequencies for AM Mode Operation  
US  
EUROPEAN  
SWITCHING  
FREQUENCY  
(kHz)  
SWITCHING  
FREQUENCY  
(kHz)  
AM FREQUENCY  
(kHz)  
AM FREQUENCY  
(kHz)  
540–670  
680–980  
417  
500  
417  
500  
417  
500  
522–675  
676–945  
417  
500  
417  
500  
417  
500  
990–1180  
1190–1420  
1430–1580  
1590–1700  
946–1188  
1189–1422  
1423–1584  
1585–1701  
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9.4 Device Functional Modes  
Table 3 and Table 5 depict the operating modes and faults.  
Table 3. Operating Modes  
STATE NAME  
STANDBY  
Hi-Z  
OUTPUT FETS  
Hi-Z, floating  
CHARGE PUMP  
Stopped  
OSCILLATOR  
Stopped  
I2C  
AVDD and DVDD  
Stopped  
Active  
Active  
Active  
OFF  
ON  
ON  
ON  
Hi-Z, weak pulldown  
Switching at 50%  
Switching with audio  
Active  
Active  
Active  
Active  
Active  
Active  
Mute  
Normal operation  
Table 4. Global Faults and Actions  
FAULT OR  
EVENT  
CATEGORY  
LATCHED OR  
SELF-  
CLEARING  
FAULT OR  
EVENT  
MONITORING  
REPORTING  
METHOD  
ACTION  
TYPE  
ACTION  
RESULT  
MODES  
POR  
UV  
Voltage fault  
All  
FAULT pin  
I2C + FAULT pin  
Hard mute (no ramp)  
Standby  
Hi-Z  
Self-clearing  
Latched  
Hi-Z, mute, normal  
CP UV  
OV  
Load dump  
All  
FAULT pin  
Standby  
None  
Self-clearing  
Self-clearing  
Latched  
OTW  
Thermal warning  
Thermal fault  
Hi-Z, mute, normal  
Hi-Z, mute, normal  
I2C + CLIP_OTW pin  
I2C + FAULT pin  
None  
OTSD  
Hard mute (no ramp)  
Standby  
Table 5. Channel Faults and Actions  
LATCHED OR  
SELF-  
CLEARING  
FAULT/  
EVENT  
FAULT OR EVENT  
CATEGORY  
MONITORING  
MODES  
REPORTING  
METHOD  
ACTION  
TYPE  
ACTION  
RESULT  
Open-short  
diagnostic  
Diagnostic  
Hi-Z (I2C activated)  
I2C  
None  
None  
Latched  
Clipping  
Warning  
Mute / Play  
CLIP_OTW pin  
None  
None  
Self-clearing  
Self-clearing  
CBC load current  
limit  
Online protection  
Current Limit  
Start OC  
timer  
OC fault  
Output channel fault  
Warning  
I2C + FAULT pin  
Hard mute  
Hard mute  
Hi-Z  
Hi-Z  
Latched  
Latched  
DC offset detect  
OT Foldback  
I2C + CLIP_OTW  
pin  
Reduce Gain  
None  
Self-clearing  
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9.4.1 Audio Shutdown and Restart Sequence  
The gain ramp of the filtered output signal and the updating of the I2C registers correspond to the MUTE pin  
voltage during the ramping process. The value of the external capacitor on the MUTE pin dictates the length of  
time that the MUTE pin takes to complete the ramp. With the default 220-nF capacitor, the turn on common-  
mode ramp takes approximately 26 ms and the gain ramp takes approximately 76 ms.  
tCM  
tCM  
tGAIN  
tGAIN  
HIZ_Report_x  
(All Channels)  
LOW_LOW_Report_x  
(All Channels)  
MUTE_Report_x  
(All Channels)  
PLAY_Report_x  
MUTE Pin  
OUTx_P (Filtered)  
(All Channels)  
OUTx_M (Filtered)  
(All Channels)  
T0192-02  
Figure 13. Timing Diagram for Click- and Pop-Free Shutdown and Restart Sequence  
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9.4.2 Latched-Fault Shutdown and Restart Sequence Control  
tI2C_CL  
tDEGLITCH  
tCM  
tDEGLITCH  
tGAIN  
PVDD Normal Operating Region  
UV  
Detect  
UV  
Reset  
PVDD  
VUV + VUV_HY  
VUV  
PVDD UV Hysteresis Region  
VPOR  
HIZ_x  
Internal I2C Write  
MUTE_Report  
UV_DET  
Cleared by  
External I2C Read  
External I2C Read  
to Fault Register 1  
UV_LATCH  
FAULT Pin  
MUTE Pin  
Pop  
OUTx_P (Filtered)  
T0194-02  
Figure 14. Timing Diagram for Latched-Global-Fault Shutdown and Restart  
(UV Shutdown and Recovery)  
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tI2C_CL  
tDEGLITCH  
tCM  
tDEGLITCH  
tGAIN  
PVDD Normal Operating Region  
PVDD UV Hysteresis Region  
UV  
Detect  
UV  
Reset  
PVDD  
VUV + VUV_HY  
VUV  
VPOR  
Internal I2C Write  
HIZ_Report_1  
HIZ_Report_2,3,4  
MUTE_Report  
UV_DET  
Cleared by  
External I2C Read  
External I2C Read  
to Fault Register 1  
UV_LATCH  
FAULT Pin  
MUTE Pin  
Pop  
Pop  
Pop  
OUT1_P (Filtered)  
OUT2,3,4_P (Filtered)  
T0195-02  
Figure 15. Timing Diagram for Latched-Global-Fault Shutdown and Individual-Channel Restart  
(UV Shutdown and Recovery)  
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9.5 Programming  
9.5.1 Random Write  
As shown in Figure 16, a random write or single-byte write transfer begins with the master device transmitting a  
start condition followed by the I2C device address and the read/write bit. The read/write bit determines the  
direction of the data transfer. For a single-byte write data transfer, the read/write bit is a 0. After receiving the  
correct I2C device address and the read/write bit, the slave device responds with an acknowledge bit. Next, the  
master device transmits the address byte or bytes corresponding to the internal memory address being  
accessed. After receiving the address byte, the slave device again responds with an acknowledge bit. Next, the  
master device transmits the data byte to be written to the memory address being accessed. After receiving the  
data byte, the TAS5404Q1 device again responds with an acknowledge bit. Finally, the master device transmits  
a stop condition to complete the single-byte write transfer.  
Start  
Condition  
Acknowledge  
Acknowledge  
Acknowledge  
R/W  
A6 A5 A4 A3 A2 A1 A0  
ACK A7 A6 A5 A4 A3 A2 A1 A0 ACK D7 D6 D5 D4 D3 D2 D1 D0 ACK  
I2C Device Address and  
Read/Write Bit  
Subaddress  
Data Byte  
Stop  
Condition  
T0036-01  
Figure 16. Random-Write Transfer  
9.5.2 Sequential Write  
A sequential write transfer is identical to a single-byte data-write transfer except for the transmisson of multiple  
data bytes by the master device as shown in Figure 17. After receiving each data byte, the slave device  
responds with an acknowledge bit and automatically increments the I2C subaddress by one.  
Start  
Condition  
Acknowledge  
Acknowledge  
Acknowledge  
D0 ACK D7  
Acknowledge  
D0 ACK D7  
Acknowledge  
D0 ACK  
A6 A5  
A1 A0 R/W ACK A7 A6 A5 A4 A3  
A1 A0 ACK D7  
I2C Device Address and  
Read/Write Bit  
Subaddress  
First Data Byte  
Last Data Byte  
Stop  
Condition  
Other Data Bytes  
T0036-02  
Figure 17. Sequential Write Transfer  
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Programming (continued)  
9.5.3 Random Read  
As shown in Figure 18, a random read or single-byte read transfer begins with the master device transmitting a  
start condition followed by the I2C device address and the read/write bit. For the single-byte read transfer, the  
master device transmits both a write followed by a read. Initially, a write transfers the address byte or bytes of  
the internal memory address to be read. Therefore, the read/write bit is a 0. After receiving the address and the  
read/write bit, the slave device responds with an acknowledge bit. In addition, after sending the internal memory  
address byte or bytes, the master device transmits another start condition followed by the device address and  
the read/write bit again. At that point the read/write bit is a 1, indicating a read transfer. After receiving the  
address and the read/write bit, the slave device again responds with an acknowledge bit. Next, the TAS5404-Q1  
device transmits the data byte from the memory address being read. After receiving the data byte, the master  
device transmits a not-acknowledge followed by a stop condition to complete the single-byte read transfer.  
Repeat Start  
Condition  
Not  
Acknowledge  
Start  
Condition  
Acknowledge  
Acknowledge  
A0 ACK  
Acknowledge  
A6 A5  
A1 A0 R/W ACK A7 A6 A5 A4  
A6 A5  
A1 A0 R/W ACK D7 D6  
D1 D0 ACK  
I2C Device Address and  
Read/Write Bit  
Subaddress  
I2C Device Address and  
Read/Write Bit  
Data Byte  
Stop  
Condition  
T0036-03  
Figure 18. Random Read Transfer  
9.5.4 Sequential Read  
A sequential read transfer is identical to a single-byte read transfer except for the transmission of multiple data  
bytes by the TAS5404-Q1 device to the master device as shown in Figure 19. Except for the last data byte, the  
master device responds with an acknowledge bit after receiving each data byte and automatically increments the  
I2C subaddress by one. After receiving the last data byte, the master device transmits a not-acknowledge  
followed by a stop condition to complete the transfer.  
Repeat Start  
Condition  
Not  
Acknowledge  
Start  
Condition  
Acknowledge  
Acknowledge  
Acknowledge  
Acknowledge  
Acknowledge  
D0 ACK D7  
A6  
A0 R/W ACK A7 A6 A5  
A0 ACK  
A6  
A0 R/W ACK D7  
D0 ACK D7  
D0 ACK  
I2C Device Address and  
Read/Write Bit  
Subaddress  
I2C Device Address and First Data Byte  
Read/Write Bit  
Other Data Bytes  
Last Data Byte  
Stop  
Condition  
T0036-04  
Figure 19. Sequential Read Transfer  
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9.6 Register Maps  
Table 6. TAS5404-Q1 I2C Addresses  
SELECTABLE WITH  
FIXED ADDRESS  
READ/WRITE  
BIT  
I2C  
ADDRESS  
ADDRESS PIN  
I2C_ADDR VALUE  
MSB  
6
1
1
1
1
1
1
1
1
5
0
0
0
0
0
0
0
0
4
1
1
1
1
1
1
1
1
3
1
1
1
1
1
1
1
1
2
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
1
LSB  
0
0 (OSC MASTER)  
1 (OSC SLAVE1)  
2 (OSC SLAVE2)  
3 (OSC SLAVE3)  
I2C WRITE  
I2C READ  
I2C WRITE  
I2C READ  
I2C WRITE  
I2C READ  
I2C WRITE  
I2C READ  
1
1
1
1
1
1
1
1
0xD8  
0xD9  
0xDA  
0xDB  
0xDC  
0xDD  
0xDE  
0xDF  
1
0
1
0
1
0
1
Table 7. I2C Address Register Definitions  
ADDRESS  
0x00  
TYPE  
Read  
REGISTER DESCRIPTION  
Latched fault register 1, global and channel fault  
Latched fault register 2, dc offset and overcurrent detect  
Latched diagnostic register 1, load diagnostics  
Latched diagnostic register 2, load diagnostics  
External status register 1, temperature and voltage detect  
External status register 2, Hi-Z and low-low state  
External status register 3, mute and play modes  
External status register 4, load diagnostics  
0x01  
Read  
0x02  
Read  
0x03  
Read  
0x04  
Read  
0x05  
Read  
0x06  
Read  
0x07  
Read  
0x08  
Read, Write  
Read, Write  
Read, Write  
Read, Write  
Read, Write  
Read, Write  
External control register 1, channel gain select  
External control register 2, overcurrent control  
External control register 3, switching frequency and clip pin select  
External control register 4, load diagnostic, master mode select  
External control register 5, output state control  
External control register 6, output state control  
Not used  
0x09  
0x0A  
0x0B  
0x0C  
0x0D  
0x0E, 0x0F  
0x10  
Read, Write  
Read  
External control register 7, dc offset detect threshold selection  
0x13  
External status register 5, overtemperature shutdown and thermal foldback  
Table 8. Fault Register 1 (0x00) Protection  
D7  
0
D6  
0
D5  
0
D4  
0
D3  
0
D2  
0
D1  
0
D0  
0
FUNCTION  
No protection-created faults, default value  
Overtemperature warning has occurred.  
DC offset has occurred in any channel.  
Overcurrent shutdown has occurred in any channel.  
Overtemperature shutdown has occurred.  
Charge-pump undervoltage has occurred.  
AVDD, analog voltage, undervoltage has occurred.  
PVDD undervoltage has occurred.  
1
1
1
1
1
1
1
1
PVDD overvoltage has occurred.  
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Table 9. Fault Register 2 (0x01) Protection  
D7  
0
D6  
D5  
0
D4  
0
D3  
0
D2  
0
D1  
0
D0  
0
FUNCTION  
No protection-created faults, default value  
Overcurrent shutdown channel 1 has occurred.  
Overcurrent shutdown channel 2 has occurred.  
Overcurrent shutdown channel 3 has occurred.  
Overcurrent shutdown channel 4 has occurred.  
DC offset channel 1 has occurred.  
0
1
1
1
1
1
1
1
DC offset channel 2 has occurred.  
DC offset channel 3 has occurred.  
1
DC offset channel 4 has occurred.  
Table 10. Diagnostic Register 1 (0x02) Load Diagnostics  
D7  
0
D6  
0
D5  
0
D4  
0
D3  
0
D2  
0
D1  
0
D0  
0
FUNCTION  
No load-diagnostic-created faults, default value  
Output short to ground channel 1 has occurred.  
Output short to PVDD channel 1 has occurred.  
Shorted load channel 1 has occurred.  
1
1
1
1
Open load channel 1 has occurred.  
1
Output short to ground channel 2 has occurred.  
Output short to PVDD channel 2 has occurred.  
Shorted load channel 2 has occurred.  
1
1
1
Open load channel 2 has occurred.  
Table 11. Diagnostic Register 2 (0x03) Load Diagnostics  
D7  
0
D6  
0
D5  
0
D4  
0
D3  
0
D2  
0
D1  
0
D0  
0
FUNCTION  
No load-diagnostic-created faults, default value  
Output short to ground channel 3 has occurred.  
Output short to PVDD channel 3 has occurred.  
Shorted load channel 3 has occurred.  
1
1
1
1
Open load channel 3 has occurred.  
1
Output short to ground channel 4 has occurred.  
Output short to PVDD channel 4 has occurred.  
Shorted load channel 4 has occurred.  
1
1
1
Open load channel 4 has occurred.  
Table 12. External Status Register 1 (0x04) Fault Detection  
D7  
0
D6  
0
D5  
0
D4  
0
D3  
0
D2  
0
D1  
0
D0  
0
FUNCTION  
No protection-created faults are present, default value.  
PVDD overvoltage fault is present.  
PVDD undervoltage fault is present.  
AVDD, analog voltage fault is present.  
Charge-pump voltage fault is present.  
Overtemperature shutdown is present.  
Overtemperature warning  
1
1
1
1
1
0
0
1
0
1
1
Overtemperature warning level 1  
1
0
1
Overtemperature warning level 2  
1
1
1
Overtemperature warning level 3  
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Table 13. External Status Register 2 (0x05) Output State of Individual Channels  
D7  
0
D6  
0
D5  
0
D4  
0
D3  
1
D2  
1
D1  
1
D0  
1
FUNCTION  
Output is in Hi-Z mode, not in low-low mode(1), default value.  
0
Channel 1 Hi-Z mode (0 = not Hi-Z, 1 = Hi-Z)  
0
Channel 2 Hi-Z mode (0 = not Hi-Z, 1 = Hi-Z)  
0
Channel 3 Hi-Z mode (0 = not Hi-Z, 1 = Hi-Z)  
0
Channel 4 Hi-Z mode (0 = not Hi-Z, 1 = Hi-Z)  
1
Channel 1 low-low mode (0 = not low-low, 1 = low-low)(1)  
Channel 2 low-low mode (0 = not low-low, 1 = low-low)(1)  
Channel 3 low-low mode (0 = not low-low, 1 = low-low)(1)  
Channel 4 low-low mode (0 = not low-low, 1 = low-low)(1)  
1
1
1
(1) Low-low is defined as both outputs actively pulled to ground.  
Table 14. External Status Register 3 (0x06) Play and Mute Modes  
D7  
0
D6  
0
D5  
0
D4  
0
D3  
0
D2  
0
D1  
0
D0  
0
FUNCTION  
Mute mode is disabled, play mode disabled, default value, (Hi-Z mode).  
Channel 1 play mode is enabled.  
1
1
Channel 2 play mode is enabled.  
1
Channel 3 play mode is enabled.  
1
Channel 4 play mode is enabled.  
1
Channel 1 mute mode is enabled.  
1
Channel 2 mute mode is enabled.  
1
Channel 3 mute mode is enabled.  
1
Channel 4 mute mode is enabled.  
Table 15. External Status Register 4 (0x07) Load Diagnostics  
D7  
0
D6  
0
D5  
0
D4  
0
D3  
0
D2  
0
D1  
0
D0  
0
FUNCTION  
No channels are set in load diagnostics mode, default value.  
Channel 1 is in load diagnostics mode.  
Channel 2 is in load diagnostics mode.  
Channel 3 is in load diagnostics mode.  
Channel 4 is in load diagnostics mode.  
Channel 1 is in overtemperature foldback.  
Channel 2 is in overtemperature foldback.  
Channel 3 is in overtemperature foldback.  
Channel 4 is in overtemperature foldback.  
1
1
1
1
1
1
1
1
Table 16. External Control Register 1 (0x08) Gain Select  
D7  
1
D6  
0
D5  
1
D4  
0
D3  
1
D2  
0
D1  
1
D0  
0
FUNCTION  
Set gain for all channels to 26 dB, default value.  
Set channel 1 gain to 12 dB.  
0
0
0
1
Set channel 1 gain to 20 dB.  
1
1
Set channel 1 gain to 32 dB.  
0
0
Set channel 2 gain to 12 dB.  
0
1
Set channel 2 gain to 20 dB.  
1
1
Set channel 2 gain to 32 dB.  
0
0
Set channel 3 gain to 12 dB.  
0
1
Set channel 3 gain to 20 dB.  
1
1
Set channel 3 gain to 32 dB.  
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Table 16. External Control Register 1 (0x08) Gain Select (continued)  
D7  
0
D6  
D5  
D4  
D3  
D2  
D1  
D0  
FUNCTION  
0
1
1
Set channel 4 gain to 12 dB.  
Set channel 4 gain to 20 dB.  
Set channel 4 gain to 32 dB.  
0
1
Table 17. External Control Register 2 (0x09) Overcurrent Control  
D7  
1
D6  
1
D5  
1
D4  
1
D3  
0
D2  
0
D1  
0
D0  
0
FUNCTION  
Current limit level 2 for all channels, thermal foldback is active.  
Disable thermal foldback  
1
0
Set channel 1 overcurrent limit ( 0 - level 1, 1 - level 2)  
Set channel 2 overcurrent limit ( 0 - level 1, 1 - level 2)  
Set channel 3 overcurrent limit ( 0 - level 1, 1 - level 2)  
Set channel 4 overcurrent limit ( 0 - level 1, 1 - level 2)  
Reserved  
0
0
0
1
1
1
Table 18. External Control Register 3 (0x0A) Switching Frequency Select and Clip_OTW Configuration  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
FUNCTION  
0
0
0
0
1
1
0
1
Set fS = 417 kHz, report clip and OTW, 45° phase, disable hard stop,  
CLIP_OTW pin does not report thermal foldback.  
1
1
1
1
0
0
1
1
0
1
0
0
1
1
0
0
1
Set fS = 500 kHz  
Set fS = 357 kHz  
Invalid frequency selection (do not set)  
Configure CLIP_OTW pin to report tweeter detect only.  
Configure CLIP_OTW pin to report clip detect only.  
Configure CLIP_OTW pin to report overtemperature warning only.  
Enable hard-stop mode.  
Set fS to a 180° phase difference between adjacent channels.  
Send sync pulse from OSC_SYNC pin (device must be in master mode).  
Configure CLIP_OTW pin to report thermal foldback  
Table 19. External Control Register 4 (0x0B) Load Diagnostics and Master/Slave Control  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
FUNCTION  
0
1
0
1
0
0
0
0
Clock output disabled, master clock mode, dc offset detection enabled,  
load diagnostics disabled  
1
0
1
0
1
1
1
1
Run channel 1 load diagnostics  
Run channel 2 load diagnostics  
Run channel 3 load diagnostics  
Run channel 4 load diagnostics  
Disable dc offset detection on all channels  
Enable tweeter-detect mode  
Enable slave mode (external oscillator is necessary)  
Enable clock output on OSC_SYNC pin (valid only in master mode)  
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Table 20. External Control Register 5 (0x0C) Output Control  
D7  
0
D6  
0
D5  
0
D4  
1
D3  
1
D2  
1
D1  
1
D0  
1
FUNCTION  
All channels, Hi-Z, mute, reset disabled, dc offset detect is enabled  
Set channel 1 to mute mode, non-Hi-Z  
Set channel 2 to mute mode, non-Hi-Z  
Set channel 3 to mute mode, non-Hi-Z  
Set channel 4 to mute mode, non-Hi-Z  
Set non-Hi-Z channels to play mode, (unmute)  
DC offsett detect shutdown disabled, but still reports a fault  
Reserved  
0
0
0
0
0
1
1
1
Reset device  
Table 21. External Control Register 6 (0x0D) Output Control  
D7  
0
D6  
0
D5  
0
D4  
0
D3  
0
D2  
0
D1  
0
D0  
0
FUNCTION  
Low-low state disabled, all channels  
1
Set channel 1 to low-low state  
1
Set channel 2 to low-low state  
1
Set channel 3 to low-low state  
1
Set channel 4 to low-low state  
1
Connect channel 1 and channel 2 for parallel BTL mode  
Connect channel 3 and channel 4 for parallel BTL mode  
Reserved  
1
1
1
Table 22. External Control Register 7 (0x10) Miscellaneous Selection  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
FUNCTION  
0
0
0
0
0
0
0
1
Normal speed CM ramp, normal S2P & S2G timing, no delay between  
LDG phases, Crosstalk Enhancement Disabled, Default DC offset detect  
value (1.6V)  
1
1
1
0
1
0
0
Minimum DC offset detect value (0.8 V)  
Maximum DC offset detect value (2.4 V)  
Enable crosstalk enhancement  
Adds a 20-ms delay between load diagnostic phases  
Short-to-power (S2P) and short-to-ground (S2G) load-diagnostic phases  
take 4x longer  
1
1
1
Slow common-mode ramp, increase the default time by 3x  
Reserved  
Slower common-mode (CM) ramp-down from mute mode  
Table 23. External Status Register 5 (0x13) Overtemperature and Thermal Foldback Status  
D7  
0
D6  
0
D5  
0
D4  
0
D3  
0
D2  
0
D1  
0
D0  
0
FUNCTION  
Default overtemperature foldback status, no channel is in foldback  
Channel 1 in thermal foldback  
1
1
Channel 2 in thermal foldback  
1
Channel 3 in thermal foldback  
1
Channel 4 in thermal foldback  
1
Channel 1 in overtemperature shutdown  
Channel 2 in overtemperature shutdown  
Channel 3 in overtemperature shutdown  
Channel 4 in overtemperature shutdown  
1
1
1
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10 Application and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
10.1 Application Information  
The TAS5404-Q1 device is a four-channel class-D audio amplifier designed for use in automotive head units and  
external amplifier modules. The TAS5404-Q1 device incorporates all the functionality required to perform in the  
demanding OEM applications area.  
10.2 Typical Application  
Figure 20 shows a typical application circuit for the TAS5404-Q1 device.  
Figure 20. TAS5404-Q1 Typical Application Schematic  
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Typical Application (continued)  
10.2.1 Design Requirements  
Power Supplies  
The TAS5404-Q1 device requires only a single power supply compliant with the recommended operation  
range. The TAS5404-Q1 device is designed to work with either a vehicle battery or regulated boost power  
supply.  
Communication  
The TAS5404-Q1 device communicates with the system controller with both discrete hardware control pins  
2
2
2
and with I C. The TAS5404-Q1 device is an I C slave and thus requires a master. If a master I C-  
compliant device is not present in the system, the TAS5404-Q1 device can only be used with the default  
settings. Diagnostic information is limited to the discrete reporting FAULT pin.  
External Components  
Table 24 lists the components required for the TAS5404-Q1 device.  
Table 24. Supporting Components  
EVM Designator  
Quanity  
Value  
0.47μF ± 10%  
330 μF ± 20%  
1 μF ± 10%  
Size  
Description  
Use in Application  
Analog audio input filter, bypass  
Power supply  
C37, C38, C47, C50  
C5, C6, C7, C8  
4
4
6
1206  
Film, 16-V  
10 mm  
0805  
Low-ESR aluminum capacitor, 35-V  
X7R ceramic capacitor, 50-V  
C9, C10, C48, C49,  
C27, C28  
Power supply  
C45  
1
4
8
2.2uF ± 10%  
470nF ± 10%  
470 pF ± 10%  
0805  
0805  
0603  
Film, 16-V  
Analog audio input filter, bypass  
Amplifier output filtering  
C14, C23, C32, C42  
X7R ceramic capacitor, 50-V  
X7R ceramic capacitor, 50-V  
C11, C15, C20,  
C24, C29, C33,  
C39, C43  
Amplifier output snubbers  
C19, C36  
C4  
2
1
1
2
8
0.1 μF ± 10%  
2200 pF ± 10%  
0.082 μF ± 10%  
4.7 μF ± 10%  
0.47 μF ± 10%  
0603  
0603  
0603  
1206  
0603  
X7R ceramic capacitor, 25-V  
X7R ceramic capacitor, 50-V  
X7R ceramic capacitor, 25-V  
X7R ceramic capacitor, 25-V  
X7R ceramic capacitor, 25-V  
Power supply  
Power supply  
Power supply  
Power supply  
Output EMI filtering  
C3  
C1, C2  
C12, C17, C21,  
C25, C30, C34,  
C40, C44  
C15  
L1  
1
1
220nF ± 10%  
0603  
X7R ceramic capacitor, 25-V  
Mute timing  
10 μH ± 20%  
13.5 mm ×13.5 Shielded ferrite inductor  
mm  
Power supply  
L2, L3, L4, L5, L6,  
L7, L8, L9  
8
10 μH ± 20%  
12 mm × 14  
mm  
Dual inductor  
Amplifier output filtering  
R1, R2  
2
8
49.9 kΩ ± 1%  
5.6 Ω ± 5%  
0805  
0805  
Resistors, 0.125-W  
Resistors, 0.125-W  
Analog audio input filter  
Output snubbers  
R3, R4, R5, R6, R8,  
R9, R10, R11  
R7  
1
20.0 kΩ ± 1%  
0805  
Resistors, 0.125-W  
Power supply  
10.2.2 Detailed Design Procedure  
10.2.2.1 Hardware and Software Design  
1. Hardware Schematic Design: Using Figure 20 as a guide, integrate the hardware into the system schematic.  
2. Following the recommended layout guidelines, integrate the TAS5404-Q1 device and the supporting  
components into the system PCB file.  
3. Thermal Design: The TAS5404-Q1 device has an exposed thermal pad which requires proper soldering. For  
more information, see the application reports Semiconductor and IC Package Thermal Metrics (SPRA953),  
and the PowerPAD Thermally Enhanced Package (SLMA002G).  
4. Develop software: The EVM User's Guide has detailed instructions for how to set up the TAS5404-Q1  
device, interpret diagnostic information, and so forth. For information about control registers, see the Table 7  
section.  
For questions and support go to the E2E forums.  
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10.2.2.2 Parallel Operation (PBTL)  
The TAS5404-Q1 device can drive more current by paralleling BTL channels on the load side of the LC output  
filter. Parallel operation requires identical I2C settings for any two paralleled channels to have reliable system  
performance and even power dissipation on multiple channels. For smooth power up, power down, and mute  
operation, the same control commands (such as mute, play, Hi-Z, and so on) should be sent to the paralleled  
channels at the same time. The TAS5404-Q1 device also supports load diagnostics for parallel connection.  
Paralleling on the TAS5404-Q1 device side of the LC output filter is not supported, because it can result in  
device failure. When paralleling channels, use the parallel BTL I2C control bits in register 0x0D. Parallel channels  
1 and 2, and/or channels 3 and 4. Setting these bits allows the thermal foldback to react on both channels  
equally. Provide the audio input to channel 2 if paralleing channels 1 and 2, and channel 3 if paralleling channels  
3 and 4.  
10.2.2.3 Input Filter Design  
The IN_M pin should have an impedance to GND that is equivalent to the parallel combination of the input  
impedances of all IN_P channels combined, including any source impedance from the previous stage in the  
system design. For example, if each of the four IN_P channels have a 1-µF dc blocking capacitor, 1 kΩ of series  
resistance due to an input RC filter, and 1 kΩ of source resistance from the DAC supplying the audio signal, then  
the IN_M channel should have a 4-µF capacitor in series with a 500-Ω resistor to GND (4 × 1 µF in parallel = 4  
µF; 4 × 2 kΩ in parallel = 500 Ω).  
10.2.2.4 Amplifier Output Filtering  
The output FETs drive the amplifier outputs in an H-bridge configuration. These transistors are either fully off or  
on. The result is a square-wave output signal with a duty cycle that is proportional to the amplitude of the audio  
signal. The amplifier outputs require a low-pass filter to filter out the PWM modulation carrier frequency. People  
frequently call the filter the L-C filter, due to the presence of an inductive element L and a capacitive element C  
to make up the 2-pole low-pass filter. The L-C filter attenuates the carrier frequency, reducing electromagnetic  
emissions and smoothing the current waveform which the load draws from the power supply. See the Class-D  
LC Filter Design application report (SLOA119) for a detailed description on proper component selection and  
design of an L-C filter based upon the desired load and response.  
10.2.2.5 Line Driver Applications  
In many automotive audio applications, the end user would like to use the same head unit to drive either a  
speaker (with several ohms of impedance) or an external amplifier (with several kilohms of impedance). The  
design is capable of supporting both applications; however, the one must design the output filter and system to  
handle the expected output load conditions.  
10.2.3 Application Curves  
14  
12  
10  
8
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
6
4
2
TAS5404-Q1 only  
System Efficiency  
0
0
10  
20  
30  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32  
Output Power per Channel  
Power per Channel (W)  
C002  
C001  
Figure 21. Efficiency  
Figure 22. TAS5404-Q1 Device Power Dissipation  
Four Channels AT 4 Ω Each  
Four Channels at 4 Ω Each  
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11 Power Supply Recommendations  
A car battery that can have a large voltage range most commonly provides the power for the TAS5404-Q1  
device. PVDD is a filtered battery voltage, and it is the supply for the output FETS and the low-side FET gate  
driver. The supply for the high-side FET gate driver comes from a charge pump (CP). The charge pump supplies  
the gate-drive voltage for all four channels. An internal linear regulator provides AVDD which powers the analog  
circuitry. The supply requires a 0.1-μF, 10-V external bypass capacitor at the A_BYP pin. TI does not  
recommend connecting any external components except the bypass capacitor to the A_BYP pin. DVDD, which  
comes from an internal linear regulator, powers the digital circuitry. The D_BYP pin requires a 0.1-μF, 10-V  
external bypass capacitor. TI does not recommend connecting any external components except the bypass  
capacitor to the A_BYP pin.  
The TAS5404-Q1 device can withstand fortuitous open-ground and open-power conditions. Fortuitous open  
ground usually occurs when a speaker wire shorts to ground, which allows for a second ground path through the  
body diode in the output FETs. The diagnostic capability allows debugging of the speakers and speaker wires,  
which eliminates the necessity to remove the amplifier to diagnose the problem.  
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12 Layout  
12.1 Layout Guidelines  
The EVM layout optimizes for low noise and EMC performance.  
The TAS5404-Q1 device has a thermal pad up, so a the layout must take into account an external heatsink.  
Layout also affects EMC performance.  
The EVM PCB illustrations form the basis for the layout discussions.  
12.2 Layout Example  
The areas in Figure 23 and Figure 24 indicated by the label "A", are critical to proper operation and EMC layout.  
The PVDD and ground-decoupling capacitors should be close to the TAS5404-Q1 device. These ground-  
decoupling capacitors must be on both groups of PVDD pins to ground. The ground connections of the snubber  
circuits must also be close to the grounds of the TAS5404-Q1 device.  
Figure 23. TAS5404 Board Layout - Top View  
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Figure 24. TAS5404 Board Layout - Bottom View  
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Each layer in the EVM contains a ground plane. All the ground planes should be connected together through  
many vias to reduce the impedance between the ground layers, which provides for low inductance paths for  
reduced EMI.  
Figure 25. TAS5404 Board Layout - Bottom Layer  
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12.3 Thermal Consideration  
The design of the thermally augmented package is to interface directly to heat sinks using a thermal interface  
compound (for example, Arctic Silver®, Ceramique thermal compound). The heat sink then absorbs heat from the  
ICs and couples it to the local air. With proper thermal management the process can reach equilibrium at a lower  
temperature, and heat can be continually removed from the ICs. Because of the efficiency of the TAS5404-Q1  
device, heat sinks can be smaller than those required for linear amplifiers of equivalent performance.  
RθJA is a system thermal resistance from junction to ambient air. As such, it is a system parameter with the  
following components:  
RθJC (the thermal resistance from junction to case, or in this case the heat slug)  
Thermal resistance of the thermal grease  
Thermal resistance of the heat sink  
One can calculate the thermal resistance of the thermal grease from the exposed heat slug area and the  
manufacturer's value for the area thermal resistance of the thermal grease (expressed in °C-in2/W or °C-mm2/W).  
The area thermal resistance of the example thermal grease with a 0.001-inch (0.0254-mm) thick layer is about  
0.007°C-in2/W (4.52°C-mm2/W). The approximate exposed heat slug size for a 64-pin QFP is 0.099 in2 (64 mm2)  
Dividing the example area thermal resistance of the thermal grease by the area of the heat slug gives the actual  
resistance through the thermal grease for both parts, which is 0.07°C/W.  
The thermal resistance of thermal pads is generally considerably higher than a thin thermal-grease layer.  
Thermal tape has an even higher thermal resistance and should not be used at all. The heat-sink vendor  
generally predicts heat sink thermal resistance, either modeled using a continuous-flow dynamics (CFD) model,  
or measured.  
Therefore, for a single monaural channel in the IC, the system RθJA = RθJC + thermal-grease resistance + heat-  
sink resistance.  
Table 25 indicates modeled parameters for one TAS5404-Q1 device on a heat sink. The exposed pad  
dimensions are 8 mm × 8 mm. The junction temperature setting is at 115°C while delivering 20 watts per channel  
into 4-Ω loads with no clipping. The assumed thickness of the thermal grease is about 0.001 inches (0.0254  
mm).  
Table 25. QFP Package Modeled Parameters  
DEVICE  
Ambient temperature  
Power to load  
64-PIN QFP  
25  
UNIT  
°C  
20  
W × 4  
W × 4  
°C  
Power dissipation  
1.9  
ΔT inside package  
7.6  
ΔT through thermal grease  
Required heatsink thermal resistance  
Junction temperature  
System RθJA  
0.46  
10.78  
115  
°C  
°C/W  
°C  
11.85  
90  
°C/W  
°C  
RθJA × power dissipation  
12.4 Electrical Connection of Heat Slug and Heat Sink  
Electrically connect the heat sink attached to the heat slug of the TAS5404-Q1 device to GND, or leave it  
floating. Do not connect the heat slug to any other electrical node.  
12.5 EMI Considerations  
Automotive-level EMI performance depends on both careful integrated circuit design and good system-level  
design. Controlling sources of electromagnetic interference (EMI) was a major consideration in all aspects of the  
design.  
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EMI Considerations (continued)  
The design has minimal parasitic inductances due to the short leads on the package. This dramatically reduces  
the EMI that results from current passing from the die to the system PCB. Each channel also operates at a  
different phase. The phase between channels is I2C selectable to either 45° or 180°, to reduce EMI caused by  
high-current switching. The design also incorporates circuitry that optimizes output transitions that cause EMI.  
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13 Device and Documentation Support  
13.1 Device Support  
13.1.1 Third-Party Products Disclaimer  
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT  
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES  
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER  
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.  
13.2 Community Resources  
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective  
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of  
Use.  
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration  
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help  
solve problems with fellow engineers.  
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and  
contact information for technical support.  
13.3 Trademarks  
E2E is a trademark of Texas Instruments.  
Arctic Silver is a registered trademark of Arctic Silver.  
All other trademarks are the property of their respective owners.  
13.4 Electrostatic Discharge Caution  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
13.5 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
14 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
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PACKAGE OPTION ADDENDUM  
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PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(6)  
(3)  
(4/5)  
TAS5404TPHDRQ1  
ACTIVE  
HTQFP  
PHD  
64  
1000  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
Level-3-260C-168 HR  
-40 to 105  
TAS5404TQ1  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish  
value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
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Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
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TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TAS5404TPHDRQ1  
HTQFP  
PHD  
64  
1000  
330.0  
24.4  
17.0  
17.0  
1.5  
20.0  
24.0  
Q2  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
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12-Oct-2015  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
HTQFP PHD 64  
SPQ  
Length (mm) Width (mm) Height (mm)  
367.0 367.0 45.0  
TAS5404TPHDRQ1  
1000  
Pack Materials-Page 2  
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