TMUX7308F_V01 [TI]

TMUX730xF ±60-V Fault-Protected, 8:1 and Dual 4:1 Multiplexers with 1.8-V Logic;
TMUX7308F_V01
型号: TMUX7308F_V01
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

TMUX730xF ±60-V Fault-Protected, 8:1 and Dual 4:1 Multiplexers with 1.8-V Logic

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TMUX7308F  
SCDS403A – FEBRUARY 2021 – REVISED OCTOBER 2021  
TMUX730xF ±60-V Fault-Protected, 8:1 and Dual 4:1 Multiplexers with 1.8-V Logic  
1 Features  
3 Description  
Wide supply range:  
The TMUX7308F and TMUX7309F are modern  
complementary metal-oxide semiconductor (CMOS)  
analog multiplexers in 8:1 (single ended) and 4:1  
(differential) configurations. The devices work well  
with dual supplies (±5 V to ±22 V), a single supply  
(8 V to 44 V), or asymmetric supplies. All control  
inputs support logic levels from 1.8 V to 44 V, enabling  
system level flexibility for controlling the multiplexer.  
– Dual supply: ±5 V to ±22 V  
– Single supply: 8 V to 44 V  
Integrated fault protection:  
– Overvoltage protection,  
source to supplies or to Ddrain: ±85 V  
– Overvoltage protection: ±60 V  
– Powered-off protection: ±60 V  
– Non-fault channels continue to operate with low  
leakage currents  
– Known state without digital inputs present  
– Output clamped to the supply in overvoltage  
condition  
Latch-up immunity by device construction  
Break-before-make switching action  
Logic levels: 1.8 V to VDD  
Industry standard TSSOP and  
smaller WQFN packages  
When no power supplies are present, the switch  
channels remain in the OFF state regardless of  
switch input conditions and logic control status. Under  
normal operation conditions, if the analog input signal  
level on any Sx pin exceeds the supply voltage (VDD  
or VSS) by a threshold voltage (VT), the channel turns  
OFF and the Sx pin becomes high impedance. When  
the fault channel is selected, the drain pin (D or Dx) is  
pulled to the supply (VDD or VSS) that was exceeded.  
The device blocks fault voltage up to +60 V or –60  
V relative to ground in both powered and powered-off  
conditions.  
2 Applications  
Factory automation and control  
Programmable logic controllers (PLC)  
Analog input modules  
Semiconductor test equipment  
Battery test equipment  
The low capacitance, low charge injection, and  
integrated fault protection enable the TMUX7308F  
and TMUX7309F devices to be used in front end  
data acquisition applications where high performance  
and high robustness are both critical. The devices are  
available in a standard TSSOP package and smaller  
WQFN package (ideal if PCB space is limited).  
Servo drive control module  
Data acquisition systems (DAQ)  
VDD  
VSS  
VDD  
VSS  
Device Information(1)  
SW  
SW  
SW  
PART NUMBER  
PACKAGE  
TSSOP (16)  
WQFN (16)  
BODY SIZE (NOM)  
5.00 mm × 4.40 mm  
4.00 mm × 4.00 mm  
S1  
S2  
S1A  
DA  
DB  
TMUX7308F  
TMUX7309F  
SW  
SW  
S4A  
S1B  
D
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
SW  
SW  
S4B  
S8  
A1  
A2  
A3  
EN  
A1  
A2  
EN  
Fault Detection/  
Switch Driver/  
Logic Decoder  
Fault Detection/  
Switch Driver/  
Logic Decoder  
TMUX7308F  
TMUX7309F  
Simplified Schematic  
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. ADVANCE INFORMATION for preproduction products; subject to change  
without notice.  
 
 
 
TMUX7308F  
SCDS403A – FEBRUARY 2021 – REVISED OCTOBER 2021  
www.ti.com  
Table of Contents  
1 Features............................................................................1  
2 Applications.....................................................................1  
3 Description.......................................................................1  
4 Revision History.............................................................. 2  
5 Pin Configuration and Functions...................................3  
6 Specifications.................................................................. 5  
6.1 Absolute Maximum Ratings ....................................... 5  
6.2 ESD Ratings .............................................................. 5  
6.3 Thermal Information ...................................................5  
6.4 Recommended Operating Conditions ........................6  
6.5 Electrical Characteristics (Global) ..............................6  
6.6 ±15 V Dual Supply: Electrical Characteristics ............7  
6.7 ±20 V Dual Supply: Electrical Characteristics ..........10  
6.8 12 V Single Supply: Electrical Characteristics ......... 13  
7 Parameter Measurement Information..........................16  
7.1 Truth Tables.............................................................. 16  
7.2 On-Resistance.......................................................... 17  
7.3 Off-Leakage Current................................................. 17  
7.4 On-Leakage Current................................................. 18  
7.5 Break-Before-Make Delay.........................................18  
7.6 Enable Delay Time....................................................19  
7.7 Transition Time......................................................... 19  
7.8 Charge Injection........................................................20  
7.9 Crosstalk...................................................................21  
7.10 Bandwidth............................................................... 22  
8 Detailed Description......................................................23  
8.1 Overview...................................................................23  
8.2 Functional Block Diagram.........................................23  
8.3 Feature Description...................................................23  
8.4 Device Functional Modes..........................................25  
9 Application and Implementation..................................26  
9.1 Application Information............................................. 26  
9.2 Typical Application.................................................... 26  
10 Power Supply Recommendations..............................27  
11 Layout...........................................................................28  
11.1 Layout Guidelines................................................... 28  
11.2 Layout Example...................................................... 28  
12 Device and Documentation Support..........................29  
12.1 Documentation Support.......................................... 29  
12.2 Receiving Notification of Documentation Updates..29  
12.3 Support Resources................................................. 29  
12.4 Trademarks.............................................................29  
12.5 Electrostatic Discharge Caution..............................29  
12.6 Glossary..................................................................29  
13 Mechanical, Packaging, and Orderable  
Information.................................................................... 29  
13.1 Tape and Reel Information......................................36  
4 Revision History  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
Changes from Revision * (February 2021) to Revision A (October 2021)  
Page  
Added package details....................................................................................................................................... 1  
Added Thermal information for TSSOP package............................................................................................... 5  
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TMUX7308F  
SCDS403A – FEBRUARY 2021 – REVISED OCTOBER 2021  
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Device Comparison Table  
PRODUCT  
DESCRIPTION  
TMUX7308F  
TMUX7309F  
+60 V/ –60 V Tolerant, Fault-protected, Latch-up Immune, Single-Ended 8:1 Multiplexer  
+60 V/ –60 V Tolerant, Fault-protected, Latch-up Immune, 4:1, 2-Channel Multiplexer  
5 Pin Configuration and Functions  
A0  
EN  
VSS  
S1  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
A1  
A2  
GND  
VDD  
S5  
VSS  
S1  
1
2
3
4
12  
11  
10  
9
GND  
VDD  
S5  
Thermal  
Pad  
S2  
S2  
S3  
S6  
S3  
S6  
S4  
S7  
D
S8  
Not to scale  
Not to scale  
Figure 5-1. PW Package 16-Pin TSSOP Top View  
Figure 5-2. RRP Package 16-Pin WQFN Top View  
Table 5-1. Pin Functions: TMUX7308F  
PIN  
TYPE(1)  
DESCRIPTION  
NAME  
A0  
TSSOP  
WQFN  
15  
1
16  
15  
8
I
I
Logic control input address 0 (A0).  
A1  
14  
Logic control input address 1 (A1).  
Logic control input address 2 (A2).  
Drain pin. Can be an input or output.  
A2  
13  
I
D
6
I/O  
Active high digital enable (EN) pin. The device is disabled and all switches become high  
impedance when the pin is low. When the pin is high, the Ax logic inputs determine individual  
switch states.  
EN  
2
16  
I
GND  
S1  
S2  
S3  
S4  
S5  
S6  
S7  
S8  
14  
4
12  
2
P
Ground (0 V) reference  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
Source pin 1. Can be an input or output.  
Source pin 2. Can be an input or output.  
Source pin 3. Can be an input or output.  
Source pin 4. Can be an input or output.  
Source pin 5. Can be an input or output.  
Source pin 6. Can be an input or output.  
Source pin 7. Can be an input or output.  
Source pin 8. Can be an input or output.  
5
3
6
4
7
5
12  
11  
10  
9
10  
9
8
7
Positive power supply. This pin is the most positive power-supply potential. For reliable  
operation, connect a decoupling capacitor ranging from 0.1 µF to 10 µF between VDD and  
GND.  
VDD  
13  
11  
P
Negative power supply. This pin is the most negative power-supply potential. In single-supply  
applications, this pin can be connected to ground. For reliable operation, connect a decoupling  
capacitor ranging from 0.1 µF to 10 µF between VSS and GND.  
VSS  
3
1
P
P
Thermal  
Pad  
The thermal pad is not connected internally. No requirement to solder this pad. For best  
performance, it is recommended that the pad be tied to GND or VSS.  
(1) I = input, O = output, I/O = input and output, P = power  
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A0  
EN  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
A1  
GND  
VDD  
S1B  
S2B  
S3B  
S4B  
DB  
VSS  
S1A  
S2A  
S3A  
S4A  
DA  
VSS  
S1A  
S2A  
S3A  
1
2
3
4
12  
11  
10  
9
VDD  
S1B  
S2B  
S3B  
Thermal  
Pad  
Not to scale  
Not to scale  
Figure 5-4. RRP Package 16-Pin WQFN Top View  
Figure 5-3. PW Package 16-Pin TSSOP Top View  
Table 5-2. Pin Functions: TMUX7309F  
PIN  
TYPE(1)  
DESCRIPTION  
NAME  
A0  
TSSOP  
WQFN  
1
16  
8
15  
14  
6
I
Logic control input address 0 (A0).  
A1  
I
Logic control input address 1 (A1).  
DA  
I/O  
I/O  
Drain terminal A. Can be an input or output.  
Drain terminal B. Can be an input or output.  
DB  
9
7
Active high digital enable (EN) pin. The device is disabled and all switches become high  
impedance when the pin is low. When the pin is high, the Ax logic inputs determine individual  
switch states.  
EN  
2
16  
I
GND  
S1A  
S1B  
S2A  
S2B  
S3A  
S3B  
S4A  
S4B  
15  
4
13  
2
P
Ground (0 V) reference  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
Source pin 1A. Can be an input or output.  
Source pin 1B. Can be an input or output.  
Source pin 2A. Can be an input or output.  
Source pin 2B. Can be an input or output.  
Source pin 3A. Can be an input or output.  
Source pin 3B. Can be an input or output.  
Source pin 4A. Can be an input or output.  
Source pin 4B. Can be an input or output.  
13  
5
11  
3
12  
6
10  
4
11  
7
9
5
10  
8
Positive power supply. This pin is the most positive power-supply potential. For reliable  
operation, connect a decoupling capacitor ranging from 0.1 µF to 10 µF between VDD and  
GND.  
VDD  
14  
12  
P
Negative power supply. This pin is the most negative power-supply potential. In single-supply  
applications, this pin can be connected to ground. For reliable operation, connect a decoupling  
capacitor ranging from 0.1 µF to 10 µF between VSS and GND.  
VSS  
3
1
P
P
Thermal  
Pad  
The thermal pad is not connected internally. No requirement to solder this pad. For best  
performance, it is recommended that the pad be tied to GND or VSS.  
(1) I = input, O = output, I/O = input and output, P = power  
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SCDS403A – FEBRUARY 2021 – REVISED OCTOBER 2021  
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6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
MAX  
48  
UNIT  
V
VDD to VSS  
VDD to GND  
VSS to GND  
VS to GND  
VS to VDD  
VS to VSS  
VD  
Supply voltage  
–0.3  
–48  
–60  
–85  
48  
V
0.3  
60  
V
Source input pin (Sx) voltage to GND  
Source input pin (Sx) voltage to VDD  
Source input pin (Sx) voltage to VSS  
Drain pin (D or Dx) voltage  
V
V
85  
V
VSS–0.7  
GND –0.7  
–30  
VDD+0.7  
V
VSEL or VEN  
ISEL or IEN  
IS or ID (CONT)  
Tstg  
Logic control input pin voltage (EN, A0, A1, A2)(2)  
Logic control input pin current (EN, A0, A1, A2)(2)  
Source or drain continuous current (Sx or D)  
Storage temperature  
48  
V
30  
IDC ± 10 %(3)  
150  
mA  
mA  
°C  
°C  
°C  
IDC ± 10 %(3)  
–65  
TA  
Ambient temperature  
–55  
150  
TJ  
Junction temperature  
150  
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress  
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated  
under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability.  
(2) Stresses have to be kept at or below both voltage and current ratings at all time.  
(3) Refer to Recommended Operating Conditions for IDC ratings.  
6.2 ESD Ratings  
VALUE  
UNIT  
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all  
pins(1)  
±2000  
V
Electrostatic  
discharge  
V(ESD)  
Charged device model (CDM), per JEDEC  
All pins  
±500  
V
specification JESD22-C101(2)  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 Thermal Information  
TMUX7308F/ TMUX7309F  
THERMAL METRIC(1)  
PW (TSSOP)  
16 PINS  
100.2  
31.2  
RRP (QFN)  
16 PINS  
43.0  
UNIT  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
28.8  
46.3  
17.9  
ΨJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
1.7  
0.4  
ΨJB  
45.7  
17.9  
RθJC(bot)  
N/A  
4.2  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
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SCDS403A – FEBRUARY 2021 – REVISED OCTOBER 2021  
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6.4 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN NOM MAX UNIT  
(1)  
VDD – VSS  
VDD  
Power supply voltage differential  
8
5
22  
44  
V
V
V
V
V
V
Positive power supply voltage  
VS  
Source pin (Sx) voltage (non-fault condition)  
Source pin (Sx) voltage (fault condition)  
Drain pin (D, Dx) voltage  
VSS  
–60  
VSS  
0
VDD  
60  
(2)  
VS_FAULT  
VD  
VDD  
44  
VSEL of VEN  
TA  
Logic control input pin voltage (EN, A0, A1, A2)  
Ambient temperature  
–40  
125 °C  
13 mA  
Continuous current through switch, WQFN package, 25°C  
Continuous current through switch, WQFN package, 125°C  
IDC  
TMUX7308F  
8
mA  
(1) VDD and VSS can be any value as long as 8 V ≤ (VDD – VSS) ≤ 44 V, and the minimum VDD is met.  
(2) Source pin voltage (Sx) under a fault condition may not exceed 85 V from supply pins (VDD and VSS.) or drain pins (D, Dx).  
6.5 Electrical Characteristics (Global)  
at TA = 25°C (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
TA  
MIN  
TYP  
MAX UNIT  
ANALOG SWITCH  
Threshold voltage for fault  
detector  
VT  
25°C  
0.7  
V
DIGITAL INPUT/ OUTPUT  
VIH  
High-level input voltage  
EN, Ax pins  
EN, Ax pins  
–40°C to +125°C  
–40°C to +125°C  
1.3  
0
44  
V
V
VIL  
Low-level input voltage  
0.8  
POWER SUPPLY  
Undervoltage lockout (UVLO)  
Rising edge, single supply configuration  
only  
VUVLO  
VUVLO  
–40°C to +125°C  
–40°C to +125°C  
5
5
6
6.5  
6.5  
V
V
threshold voltage (VDD – VSS  
)
Undervoltage lockout (UVLO)  
Falling edge, single supply configuration  
only  
5.8  
threshold voltage (VDD – VSS  
)
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6.6 ±15 V Dual Supply: Electrical Characteristics  
VDD = +15 V ± 10%, VSS = –15 V ±10%, GND = 0 V (unless otherwise noted)  
Typical at VDD = +15 V, VSS = –15 V, TA = 25(unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
VS = –10 V to +10 V, IS = –1 mA  
VS = –10 V to +10 V, IS = –1 mA  
TA  
MIN  
TYP  
MAX UNIT  
ANALOG SWITCH  
25°C  
250  
300  
RON  
On-resistance  
–40°C to +85°C  
–40°C to +125°C  
25°C  
330  
390  
6
Ω
Ω
2.5  
1.5  
0.1  
0.1  
0.3  
On-resistance mismatch between  
channels  
ΔRON  
–40°C to +85°C  
–40°C to +125°C  
25°C  
12  
13  
3.5  
4
RFLAT  
On-resistance flatness  
VS = –10 V to +10 V, IS = –1 mA  
–40°C to +85°C  
–40°C to +125°C  
25°C  
Ω
4
–1  
–2  
1
Switch state is off, VS = +10 V/ –10 V, VD  
–10 V/ + 10 V, VDD = 16.5 V, VSS = –16.5 V  
=
IS(OFF)  
ID(OFF)  
IS(ON), I,D(ON)  
Source off leakage current(1)  
Drain off leakage current(1)  
Channel on leakage current  
–40°C to +85°C  
–40°C to +125°C  
25°C  
2
nA  
nA  
nA  
–8  
8
–2  
2
Switch state is off, VS = +10 V/ –10 V, VD  
–10 V/ + 10 V, VDD = 16.5 V, VSS = –16.5 V  
=
–40°C to +85°C  
–40°C to +125°C  
25°C  
–5  
5
–15  
–2  
15  
2
Switch state is on, VS = floating, VD = –  
10 V/ +10 V, or VS = –10 V/ +10 V, VD  
floating, VDD = 16.5 V, VSS = –16.5 V  
=
–40°C to +85°C  
–40°C to +125°C  
–20  
–25  
20  
25  
FAULT CONDITION  
25°C  
±90  
±95  
VS = ± 60 V, GND = 0V, VDD = 16.5 V, VSS  
= –16.5 V  
–40°C to +85°C  
–40°C to +125°C  
25°C  
µA  
µA  
µA  
±100  
±120  
±125  
±130  
±120  
±125  
±130  
Input leakage current  
under overvoltage  
VS = ± 60 V, GND = 0V, VDD = VSS = 0 V,  
VEN = VAx = 0 V or floating  
IS(FA)  
–40°C to +85°C  
–40°C to +125°C  
25°C  
VS = ± 60 V, GND = 0V, VDD = VSS  
floating, VEN = VAx = 0 V or floating  
=
–40°C to +85°C  
–40°C to +125°C  
LOGIC INPUT/ OUTPUT  
IIH High-level input current  
25°C  
–2  
–2  
–2  
–2  
± 0.6  
± 0.6  
160  
2
2
2
2
VEN = VAx = VDD  
VEN = VAx = 0 V  
µA  
µA  
–40°C to +125°C  
25°C  
IIL  
Low-level input current  
–40°C to +125°C  
25°C  
tTRAN  
VS = 10 V, RL = 4 kΩ, CL= 12 pF  
–40°C to +85°C  
–40°C to +125°C  
380  
400  
ns  
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MAX UNIT  
SCDS403A – FEBRUARY 2021 – REVISED OCTOBER 2021  
6.6 ±15 V Dual Supply: Electrical Characteristics (continued)  
VDD = +15 V ± 10%, VSS = –15 V ±10%, GND = 0 V (unless otherwise noted)  
Typical at VDD = +15 V, VSS = –15 V, TA = 25(unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
VS = 10 V, RL = 4 kΩ, CL= 12 pF  
VS = 10 V, RL = 4 kΩ, CL= 12 pF  
RL = 4 kΩ, CL= 12 pF  
TA  
MIN  
TYP  
SWITCHING CHARACTERISTICS  
25°C  
150  
tON (EN)  
Enable turn-on time  
Enable turn-off time  
Fault response time  
Fault recovery time  
–40°C to +85°C  
–40°C to +125°C  
25°C  
300  
400  
ns  
ns  
ns  
µs  
120  
90  
tOFF (EN)  
–40°C to +85°C  
–40°C to +125°C  
25°C  
300  
400  
tRESPONSE  
–40°C to +85°C  
–40°C to +125°C  
25°C  
200  
300  
0.7  
tRECOVERY  
RL = 4 kΩ, CL= 12 pF  
–40°C to +85°C  
–40°C to +125°C  
–40°C to +125°C  
25°C  
2
2.5  
tBBM  
QINJ  
Break-before-make time delay  
Charge injection  
VS = 10 V, RL = 4 kΩ, CL= 12 pF  
VS = 0 V, CL = 1 nF, RS = 0 Ω  
50  
120  
–13  
ns  
pC  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 0 V, f = 1 MHz  
=
=
=
=
=
=
OFFISO  
Off-isolation  
25°C  
25°C  
25°C  
25°C  
25°C  
–65  
–60  
–75  
100  
150  
dB  
dB  
Intra-channel  
crosstalk (TMUX7308F)  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 0 V, f = 1 MHz  
XTALK  
Inter-channel crosstalk  
(TMUX7309F)  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 0 V, f = 1 MHz  
dB  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 0 V  
–3 dB bandwidth (TMUX7308F)  
–3 dB bandwidth (TMUX7309F)  
MHz  
MHz  
BW  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 0 V  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 0 V, f = 1 MHz  
IL  
Insertion loss  
25°C  
25°C  
25°C  
–10  
5
dB  
pF  
pF  
CS(OFF)  
Input off-capacitance  
f = 1 MHz, VS = 0 V  
f = 1 MHz, VS = 0 V  
Output off-capacitance  
(TMUX7308F)  
40  
CD(OFF)  
Output off-capacitance  
(TMUX7309F)  
f = 1 MHz, VS = 0 V  
f = 1 MHz, VS = 0 V  
f = 1 MHz, VS = 0 V  
25°C  
25°C  
25°C  
20  
40  
20  
pF  
pF  
pF  
Input/Output on-capacitance  
(TMUX7308F)  
CS(ON), CD(ON)  
Input/Output on-capacitance  
(TMUX7309F)  
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6.6 ±15 V Dual Supply: Electrical Characteristics (continued)  
VDD = +15 V ± 10%, VSS = –15 V ±10%, GND = 0 V (unless otherwise noted)  
Typical at VDD = +15 V, VSS = –15 V, TA = 25(unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
TA  
MIN  
TYP  
MAX UNIT  
POWER SUPPLY  
25°C  
0.25  
1
VDD = 16.5 V, VSS = –16.5 V, VAx = 0 V, 5  
V, or VDD, VEN = 5 V or VDD, VS = 0 V  
IDD  
VDD supply current  
–40°C to +85°C  
–40°C to +125°C  
25°C  
1
1
mA  
0.15  
0.5  
0.6  
0.7  
VDD = 16.5 V, VSS = –16.5 V, VAx = 0 V, 5  
V, or VDD, VEN = 5 V or VDD, VS = 0 V  
ISS  
VSS supply current  
–40°C to +85°C  
–40°C to +125°C  
mA  
mA  
mA  
VDD = 16.5 V, VSS = –16.5 V, VAx = 0 V, 5  
V, or VDD, VEN = 5 V or VDD, VS = 0 V  
IGND  
GND current  
25°C  
0.1  
25°C  
0.25  
1
1
VS = ± 60 V, VDD = 16.5 V, VSS = –16.5 V,  
VAx = 0 V, 5 V, or VDD, VEN = 5 V or VDD  
IDD(FA)  
VDD supply current under fault  
–40°C to +85°C  
–40°C to +125°C  
25°C  
1
0.15  
0.5  
0.6  
0.7  
VS = ± 60 V, VDD = 16.5 V, VSS = –16.5 V,  
VAx = 0 V, 5 V, or VDD, VEN = 5 V or VDD  
ISS(FA)  
VSS supply current under fault  
GND current under fault  
–40°C to +85°C  
–40°C to +125°C  
mA  
mA  
mA  
VS = ± 60 V, VDD = 16.5 V, VSS = –16.5 V,  
VAx = 0 V, 5 V, or VDD, VEN = 5 V or VDD  
IGND(FA)  
25°C  
0.2  
25°C  
0.13  
1
1
VDD = 16.5 V, VSS = –16.5 V, VAx = 0 V, 5  
V, or VDD, VEN = 0 V, VS = 0 V  
IDD(DISABLE)  
VDD supply current (disable mode)  
–40°C to +85°C  
–40°C to +125°C  
25°C  
1
0.1  
0.4  
0.5  
0.6  
VDD = 16.5 V, VSS = –16.5 V, VAx = 0 V, 5  
V, or VDD, VEN = 0 V, VS = 0 V  
ISS(DISABLE)  
VSS supply current (disable mode)  
–40°C to +85°C  
–40°C to +125°C  
mA  
(1) When VS is positive,VD is negative, and vice versa.  
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6.7 ±20 V Dual Supply: Electrical Characteristics  
VDD = +20 V ± 10%, VSS = –20 V ±10%, GND = 0 V (unless otherwise noted)  
Typical at VDD = +20 V, VSS = –20 V, TA = 25(unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
VS = –15 V to +15 V, IS = –1 mA  
VS = –15 V to +15 V, IS = –1 mA  
TA  
MIN  
TYP  
MAX UNIT  
ANALOG SWITCH  
25°C  
180  
270  
RON  
On-resistance  
–40°C to +85°C  
–40°C to +125°C  
25°C  
340  
400  
6
Ω
Ω
2.5  
1.5  
On-resistance mismatch between  
channels  
ΔRON  
–40°C to +85°C  
–40°C to +125°C  
25°C  
12  
13  
3.5  
4
RFLAT  
On-resistance flatness  
On-resistance drift  
VS = –15 V to +15 V, IS = –1 mA  
VS = 0 V, IS = –1 mA  
–40°C to +85°C  
–40°C to +125°C  
–40°C to +125°C  
25°C  
Ω
4
RON_DRIFT  
0.05  
0.1  
%/°C  
nA  
–1  
–2  
1
2
Switch state is off, VS = +15 V/ –15 V, VD  
–15 V/ + 15 V, VDD = 22 V, VSS = –22 V  
=
=
IS(OFF)  
Source off leakage current(1)  
–40°C to +85°C  
–40°C to +125°C  
25°C  
–8  
8
–2  
0.1  
0.3  
2
Switch state is off, VS = +15 V/ –15 V, VD  
–15 V/ + 15 V, VDD = 22 V, VSS = –22 V  
ID(OFF)  
Drain off leakage current(1)  
Channel on leakage current  
–40°C to +85°C  
–40°C to +125°C  
25°C  
–5  
5
nA  
nA  
–15  
–2  
15  
2
Switch state is on, VS = floating, VD = –  
IS(ON), I,D(ON)  
15 V/ +15 V, or VS = –15 V/ +15 V, VD  
floating, VDD = 22 V, VSS = –22 V  
=
–40°C to +85°C  
–40°C to +125°C  
–20  
–25  
20  
25  
FAULT CONDITION  
25°C  
±90  
±95  
VS = ± 60 V, GND = 0V, VDD = 22 V, VSS  
–22 V  
=
–40°C to +85°C  
–40°C to +125°C  
25°C  
µA  
µA  
µA  
±100  
±120  
±125  
±130  
±120  
±125  
±130  
Input leakage current  
under overvoltage  
VS = ± 60 V, GND = 0V, VDD = VSS = 0 V,  
VEN = VAx = 0 V or floating  
IS(FA)  
–40°C to +85°C  
–40°C to +125°C  
25°C  
VS = ± 60 V, GND = 0V, VDD = VSS  
floating, VEN = VAx = 0 V or floating  
=
–40°C to +85°C  
–40°C to +125°C  
LOGIC INPUT/ OUTPUT  
IIH High-level input current  
25°C  
–2  
–2  
–2  
–2  
± 0.6  
± 0.6  
160  
2
2
2
2
VEN = VAx = VDD  
VEN = VAx = 0 V  
µA  
µA  
–40°C to +125°C  
25°C  
IIL  
Low-level input current  
Transition time  
–40°C to +125°C  
25°C  
tTRAN  
VS = 10 V, RL = 4 kΩ, CL= 12 pF  
–40°C to +85°C  
–40°C to +125°C  
380  
400  
ns  
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6.7 ±20 V Dual Supply: Electrical Characteristics (continued)  
VDD = +20 V ± 10%, VSS = –20 V ±10%, GND = 0 V (unless otherwise noted)  
Typical at VDD = +20 V, VSS = –20 V, TA = 25(unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
VS = 10 V, RL = 4 kΩ, CL= 12 pF  
VS = 10 V, RL = 4 kΩ, CL= 12 pF  
RL = 4 kΩ, CL= 12 pF  
TA  
MIN  
TYP  
MAX UNIT  
SWITCHING CHARACTERISTICS  
25°C  
150  
tON (EN)  
Enable turn-on time  
Enable turn-off time  
Fault response time  
Fault recovery time  
–40°C to +85°C  
–40°C to +125°C  
25°C  
300  
400  
ns  
ns  
ns  
µs  
120  
90  
tOFF (EN)  
–40°C to +85°C  
–40°C to +125°C  
25°C  
300  
400  
tRESPONSE  
–40°C to +85°C  
–40°C to +125°C  
25°C  
200  
300  
0.7  
tRECOVERY  
RL = 4 kΩ, CL= 12 pF  
–40°C to +85°C  
–40°C to +125°C  
–40°C to +125°C  
25°C  
2
2.5  
tBBM  
QINJ  
Break-before-make time delay  
Charge injection  
VS = 10 V, RL = 4 kΩ, CL= 12 pF  
VS = 0 V, CL = 1 nF, RS = 0 Ω  
50  
120  
–13  
ns  
pC  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 0 V, f = 1 MHz  
=
=
=
=
=
=
OFFISO  
Off-isolation  
25°C  
25°C  
25°C  
25°C  
25°C  
–65  
–60  
–75  
100  
150  
dB  
dB  
Intra-channel  
crosstalk (TMUX7308F)  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 0 V, f = 1 MHz  
XTALK  
Inter-channel crosstalk  
(TMUX7309F)  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 0 V, f = 1 MHz  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 0 V  
–3 dB bandwidth (TMUX7308F)  
–3 dB bandwidth (TMUX7309F)  
BW  
MHz  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 0 V  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 0 V, f = 1 MHz  
IL  
Insertion loss  
25°C  
25°C  
25°C  
–10  
5
dB  
pF  
CS(OFF)  
Input off-capacitance  
f = 1 MHz, VS = 0 V  
f = 1 MHz, VS = 0 V  
Output off-capacitance  
(TMUX7308F)  
40  
CD(OFF)  
pF  
pF  
Output off-capacitance  
(TMUX7309F)  
f = 1 MHz, VS = 0 V  
f = 1 MHz, VS = 0 V  
f = 1 MHz, VS = 0 V  
25°C  
25°C  
25°C  
20  
40  
20  
Input/Output on-capacitance  
(TMUX7308F)  
CS(ON), CD(ON)  
Input/Output on-capacitance  
(TMUX7309F)  
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6.7 ±20 V Dual Supply: Electrical Characteristics (continued)  
VDD = +20 V ± 10%, VSS = –20 V ±10%, GND = 0 V (unless otherwise noted)  
Typical at VDD = +20 V, VSS = –20 V, TA = 25(unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
TA  
MIN  
TYP  
MAX UNIT  
POWER SUPPLY  
25°C  
0.25  
1
VDD = 22 V, VSS = –22 V, VEN/ VAx = 0V,  
5V, or VDD, VS = 0 V  
IDD  
VDD supply current  
–40°C to +85°C  
–40°C to +125°C  
25°C  
1
1
mA  
0.15  
0.5  
0.6  
0.7  
VDD = 22 V, VSS = –22 V, VEN/ VAx = 0V,  
5V, or VDD, VS = 0 V  
ISS  
VSS supply current  
–40°C to +85°C  
–40°C to +125°C  
mA  
mA  
mA  
VDD = 22 V, VSS = –22 V, VEN/ VAx = 0V,  
5V, or VDD, VS = 0 V  
IGND  
GND current  
25°C  
0.1  
25°C  
0.25  
1
1
VS = ± 60 V, VDD = 22 V, VSS = –22 V, VEN  
VAx = 0V, 5V, or VDD  
/
/
IDD(FA)  
VDD supply current under fault  
–40°C to +85°C  
–40°C to +125°C  
25°C  
1
0.15  
0.5  
0.6  
0.7  
VS = ± 60 V, VDD = 22 V, VSS = –22 V, VEN  
VAx = 0V, 5V, or VDD  
ISS(FA)  
VSS supply current under fault  
GND current under fault  
–40°C to +85°C  
–40°C to +125°C  
mA  
mA  
VS = ± 60 V, VDD = 22 V, VSS = –22 V,  
VEN/ VAx = 0V, 5V, or VDD  
IGND(FA)  
25°C  
0.2  
25°C  
0.13  
1
1
mA  
mA  
mA  
mA  
mA  
mA  
VDD = 22 V, VSS = –22 V, VAx = 0 V, 5 V, or  
VDD, VEN = 0 V, VS = 0 V  
IDD(DISABLE)  
VDD supply current (disable mode)  
–40°C to +85°C  
–40°C to +125°C  
25°C  
1
0.1  
0.4  
0.5  
0.6  
VDD = 22 V, VSS = –22 V, VAx = 0 V, 5 V, or  
VDD, VEN = 0 V, VS = 0 V  
ISS(DISABLE)  
VSS supply current (disable mode)  
–40°C to +85°C  
–40°C to +125°C  
(1) When VS is positive,VD is negative, and vice versa.  
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6.8 12 V Single Supply: Electrical Characteristics  
VDD = +12 V ± 10%, VSS = 0 V, GND = 0 V (unless otherwise noted)  
Typical at VDD = +12 V, VSS = 0 V, TA = 25(unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
ANALOG SWITCH  
RON  
RON  
RON  
On-resistance  
On-resistance  
On-resistance  
VS = 0 V to 7.8 V, IS = –1 mA  
VS = 0 V to 7.8 V, IS = –1 mA  
VS = 0 V to 7.8 V, IS = –1 mA  
25°C  
190  
320  
330  
400  
6
Ω
Ω
Ω
–40°C to +85°C  
–40°C to +125°C  
25°C  
2.5  
20  
On-resistance mismatch between  
channels  
ΔRON  
VS = 0 V to 7.8 V, IS = –1 mA  
VS = 0 V to 7.8 V, IS = –1 mA  
–40°C to +85°C  
–40°C to +125°C  
25°C  
12  
13  
25  
27  
27  
1
Ω
Ω
RFLAT  
On-resistance flatness  
–40°C to +85°C  
–40°C to +125°C  
25°C  
–1  
–2  
0.1  
0.1  
0.3  
Switch state is off, VS = 1 V/ 10 V, VD = 10  
V/ 1 V, VDD = 13.2 V  
IS(OFF)  
Source off leakage current(1)  
Drain off leakage current(1)  
Output on leakage current(1)  
–40°C to +85°C  
–40°C to +125°C  
25°C  
2
nA  
nA  
nA  
–8  
8
–2  
2
Switch state is off, VS = 1 V/ 10 V, VD = 10  
V/ 1 V, VDD = 13.2 V  
ID(OFF)  
–40°C to +85°C  
–40°C to +125°C  
25°C  
–5  
5
–15  
–2  
15  
2
Switch state is on, VS = floating, VD = 1 V/  
10 V, VDD = 13.2  
IS(ON), I,D(ON)  
–40°C to +85°C  
–40°C to +125°C  
–20  
–25  
20  
25  
FAULT CONDITION  
25°C  
±90  
±95  
VS = ± 60 V, GND = 0V, VDD = 13.2 V, VSS  
= 0 V  
–40°C to +85°C  
–40°C to +125°C  
25°C  
µA  
µA  
µA  
±100  
±120  
±125  
±130  
±120  
±125  
±130  
Input leakage current  
under overvoltage  
VS = ± 60 V, GND = 0V, VDD = VSS = 0 V,  
VEN = VAx = 0 V or floating  
IS(FA)  
–40°C to +85°C  
–40°C to +125°C  
25°C  
VS = ± 60 V, GND = 0V, VDD = VSS  
floating, VEN = VAx = 0 V or floating  
=
–40°C to +85°C  
–40°C to +125°C  
LOGIC INPUT/ OUTPUT  
IIH High-level input current  
25°C  
–2  
–2  
–2  
–2  
± 0.6  
± 0.6  
160  
2
2
2
2
µA  
µA  
VEN = VAx = VDD  
VEN = VAx = 0 V  
–40°C to +125°C  
25°C  
IIL  
Low-level input current  
Transition time  
µA  
–40°C to +125°C  
25°C  
tTRAN  
VS = 8 V, RL = 4 kΩ, CL= 12 pF  
–40°C to +85°C  
–40°C to +125°C  
380  
400  
ns  
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MAX UNIT  
SCDS403A – FEBRUARY 2021 – REVISED OCTOBER 2021  
6.8 12 V Single Supply: Electrical Characteristics (continued)  
VDD = +12 V ± 10%, VSS = 0 V, GND = 0 V (unless otherwise noted)  
Typical at VDD = +12 V, VSS = 0 V, TA = 25(unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
SWITCHING CHARACTERISTICS  
25°C  
150  
tON (EN)  
Enable turn-on time  
Enable turn-off time  
Fault response time  
Fault recovery time  
VS = 8 V, RL = 4 kΩ, CL= 12 pF  
–40°C to +85°C  
–40°C to +125°C  
25°C  
300  
400  
ns  
ns  
ns  
µs  
120  
90  
tOFF (EN)  
VS = 8 V, RL = 4 kΩ, CL= 12 pF  
RL = 4 kΩ, CL= 12 pF  
–40°C to +85°C  
–40°C to +125°C  
25°C  
300  
400  
tRESPONSE  
–40°C to +85°C  
–40°C to +125°C  
25°C  
200  
300  
0.7  
tRECOVERY  
RL = 4 kΩ, CL= 12 pF  
–40°C to +85°C  
–40°C to +125°C  
25°C  
2
2.5  
QJ  
Charge injection  
Off-isolation  
VS = 6 V, CL = 1 nF, RS = 0 Ω  
–13  
–65  
pC  
dB  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 6 V, f = 1 MHz  
=
=
=
=
=
=
OFFISO  
25°C  
25°C  
25°C  
25°C  
25°C  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 6 V, f = 1 MHz  
XTALK  
XTALK  
Intra-channel crosstalk  
–60  
–75  
100  
150  
dB  
dB  
Inter-channel crosstalk  
(TMUX7309F)  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 6 V, f = 1 MHz  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 6 V  
–3 dB bandwidth (TMUX7308F)  
–3 dB bandwidth (TMUX7309F)  
BW  
MHz  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 6 V  
RS = 50 Ω, RL = 50 Ω, CL = 5 pF, VS  
200m VRMS, VBIAS = 6 V, f = 1 MHz  
IL  
Insertion loss  
25°C  
25°C  
25°C  
–10  
5
dB  
pF  
CS(OFF)  
Input off-capacitance  
f = 1 MHz, VS = 6 V  
f = 1 MHz, VS = 6 V  
Output off-capacitance  
(TMUX7308F)  
40  
CD(OFF)  
pF  
pF  
Output off-capacitance  
(TMUX7309F)  
f = 1 MHz, VS = 6 V  
f = 1 MHz, VS = 6 V  
f = 1 MHz, VS = 6 V  
25°C  
25°C  
25°C  
20  
40  
20  
Input/Output on-capacitance  
(TMUX7308F)  
CS(ON), CD(ON)  
Input/Output on-capacitance  
(TMUX7309F)  
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6.8 12 V Single Supply: Electrical Characteristics (continued)  
VDD = +12 V ± 10%, VSS = 0 V, GND = 0 V (unless otherwise noted)  
Typical at VDD = +12 V, VSS = 0 V, TA = 25(unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
POWER SUPPLY  
25°C  
0.25  
1
VDD = 13.2 V, VSS = 0 V, VEN/ VAx = 0V, 5V,  
or VDD, VS = 6 V  
IDD  
VDD supply current  
–40°C to +85°C  
–40°C to +125°C  
25°C  
1
1
mA  
0.15  
0.5  
0.6  
0.7  
VDD = 13.2 V, VSS = 0 V, VEN/ VAx = 0V, 5V,  
or VDD, VS = 6 V  
ISS  
VSS supply current  
–40°C to +85°C  
–40°C to +125°C  
mA  
mA  
mA  
VDD = 13.2 V, VSS = 0 V, VEN/ VAx = 0V, 5V,  
or VDD, VS = 6 V  
IGND  
GND current  
25°C  
0.1  
25°C  
0.25  
1
1
VS = ± 60 V, VDD = 13.2 V, VSS = 0 V, VEN  
/
IDD(FA)  
VDD supply current under fault  
–40°C to +85°C  
–40°C to +125°C  
25°C  
VAx = 0V, 5V, or VDD  
1
0.15  
0.5  
0.6  
0.7  
VS = ± 60 V, VDD = 13.2 V, VSS = 0 V, VEN  
VAx = 0V, 5V, or VDD  
/
/
ISS(FA)  
VSS supply current under fault  
GND current under fault  
–40°C to +85°C  
–40°C to +125°C  
mA  
mA  
mA  
VS = ± 60 V, VDD = 13.2 V, VSS = 0 V, VEN  
VAx = 0V, 5V, or VDD  
IGND(FA)  
25°C  
0.2  
25°C  
0.13  
1
1
VDD = 13.2 V, VSS = 0 V, VAx = 0 V, 5 V, or  
VDD, VEN = 0 V, VS = 0 V  
IDD(DISABLE)  
VDD supply current (disable mode)  
–40°C to +85°C  
–40°C to +125°C  
25°C  
1
0.1  
0.4  
0.5  
0.6  
VDD = 13.2 V, VSS = 0 V, VAx = 0 V, 5 V, or  
VDD, VEN = 0 V, VS = 0 V  
ISS(DISABLE)  
VSS supply current (disable mode)  
–40°C to +85°C  
–40°C to +125°C  
mA  
(1) When VS is 10 V,VD is 1 V, and vice versa.  
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7 Parameter Measurement Information  
7.1 Truth Tables  
Table 7-1 shows the truth tables for the TMUX7308F.  
Table 7-1. TMUX7308F Truth Table  
Selected Source Connected to Drain Pin  
(D)  
EN  
A2  
A1  
A0  
0
X(1)  
X(1)  
X(1)  
All sources are off (HI-Z)  
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
S1  
S2  
S3  
S4  
S5  
S6  
S7  
S8  
(1) "X" means "do not care."  
Table 7-2 shows the truth tables for the TMUX7309F.  
Table 7-2. TMUX7309F Truth Table  
EN  
A1  
A0  
Selected Source Connected to Drain Pins (DA, DB)  
0
X(1)  
X(1)  
All sources are off (HI-Z)  
1
1
1
1
0
0
1
1
0
1
0
1
S1A and S1B  
S2A and S2B  
S3A and S3B  
S4A and S4B  
(1) "X" means "do not care."  
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7.2 On-Resistance  
The on-resistance of the TMUX7308F and TMUX7309F is the ohmic resistance across the source (Sx) and drain  
(Dx) pins of the device. The on-resistance varies with input voltage and supply voltage. The symbol RON is used  
to denote on-resistance. Figure 7-1 shows the measurement setup used to measure RON. ΔRON represents the  
difference between the RON of any two channels, while RON_FLAT denotes the flatness that is defined as the  
difference between the maximum and minimum value of the on-resistance measured over the specified analog  
signal range.  
V
VDD  
VSS  
8
410  
=
+
5
VDD  
VSS  
IS  
SW  
Sx  
Dx  
VS  
GND  
Figure 7-1. On-Resistance Measurement Setup  
7.3 Off-Leakage Current  
There are two types of leakage currents associated with a switch during the off state, which follows:  
1. Source off-leakage current IS(OFF): the leakage current flowing into or out of the source pin when the switch  
is off.  
2. Drain off-leakage current ID(OFF): the leakage current flowing into or out of the drain pin when the switch is  
off.  
Figure 7-2 shows the setup used to measure both off-leakage currents.  
VDD  
VSS  
VDD  
VSS  
Is (OFF)  
A
SW  
SW  
SW  
SW  
S1  
S2  
S1  
S2  
ID (OFF)  
VS  
D
D
A
GND  
VD  
SW  
SW  
S8  
S8  
VD  
GND  
VS  
GND  
GND  
GND  
GND  
IS(OFF)  
ID(OFF)  
Figure 7-2. Off-Leakage Measurement Setup  
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7.4 On-Leakage Current  
Source on-leakage current (IS(ON)) and drain on-leakage current (ID(ON)) denote the channel leakage currents  
when the switch is in the on state. IS(ON) is measured with the drain floating, while ID(ON) is measured with the  
source floating. Figure 7-3 shows the circuit used for measuring the on-leakage currents.  
VDD  
VSS  
VDD  
VSS  
IS(ON)  
A
SW  
SW  
SW  
SW  
S1  
S2  
S1  
S2  
N.C.  
ID(ON)  
A
D
D
VS  
GND  
N.C.  
SW  
SW  
VD  
S8  
S8  
GND  
VS  
VS  
GND  
GND  
GND  
GND  
IS(ON)  
ID(ON)  
Figure 7-3. On-Leakage Measurement Setup  
7.5 Break-Before-Make Delay  
The break-before-make delay is a safety feature of the TMUX7308F and TMUX7309F. The ON switches first  
break the connection before the OFF switches make connection. The time delay between the break and the  
make is known as break-before-make delay. Figure 7-4 shows the setup used to measure break-before-make  
delay, denoted by the symbol tBBM  
.
VDD  
VSS  
0.1 µF  
GND  
0.1 µF  
GND  
VDD  
VSS  
SW  
SW  
S1  
S2  
3 V  
D
tr < 20 ns  
VA  
tf < 20 ns  
0 V  
CL  
RL  
GND  
GND  
SW  
SW  
S7  
S8  
GND  
VS  
0.8 VS  
Output  
A0  
A1  
tBBM  
1
tBBM 2  
VS  
EN  
0 V  
Decoder  
tBBM = min ( tBBM 1, tBBM 2)  
A2  
GND  
VEN  
VA  
GND  
GND  
GND  
Figure 7-4. Break-Before-Make Delay Measurement Setup  
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7.6 Enable Delay Time  
tON(EN) time is defined as the time taken by the output of the TMUX7308F and TMUX7309F to rise to a 90% final  
value after the EN signal has risen to a 50% final value. tOFF(EN) is defined as the time taken by the output of the  
TMUX7308F and TMUX7309F to fall to a 10% initial value after the EN signal has fallen to a 50% initial value.  
Figure 7-5 shows the setup used to measure the enable delay time.  
VDD  
VSS  
0.1 µF  
GND  
0.1 µF  
GND  
VDD  
VSS  
SW  
SW  
S1  
S2  
3 V  
VS  
D
tr < 20 ns  
tf < 20 ns  
50%  
50%  
VEN  
GND  
0 V  
VS  
RL  
GND  
CL  
SW  
S8  
0.9 VS  
tON(EN)  
GND  
tOFF(EN)  
0.1 VS  
GND  
Output  
A0  
A1  
EN  
Decoder  
A2  
VEN  
GND  
GND  
GND  
Figure 7-5. Enable Delay Measurement Setup  
7.7 Transition Time  
Transition time is defined as the time taken by the output of the device to rise (to 90% of the transition) or fall (to  
10% of the transition) after the address signal (Ax) has fallen or risen to 50% of the transition. Figure 7-6 shows  
the setup used to measure transition time, denoted by the symbol tTRAN  
.
VDD  
VSS  
0.1 µF  
GND  
0.1 µF  
GND  
VDD  
VSS  
SW  
SW  
S1  
S2  
3 V  
0 V  
tr < 20 ns  
tf < 20 ns  
50%  
50%  
VA  
VS  
D
GND  
RL  
GND  
0.9 VS  
tTRAN  
CL  
SW  
S8  
Output  
VS  
tTRAN  
1
2
GND  
0.1 VS  
GND  
tTRAN = max ( tTRAN 1, tTRAN 2)  
A0  
A1  
EN  
Decoder  
A2  
VEN  
VA  
GND  
GND  
GND  
Figure 7-6. Transition Time Measurement Setup  
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7.8 Charge Injection  
Charge injection is a measure of the glitch impulse transferred from the digital input to the analog output during  
switching and is denoted by the symbol QINJ. Figure 7-7 shows the setup used to measure charge injection from  
the source to drain.  
VDD  
VSS  
0.1 µF  
GND  
0.1 µF  
GND  
VDD  
VSS  
SW  
SW  
S1  
S2  
Output  
VS  
D
3 V  
VEN  
0 V  
GND  
CL  
SW  
S8  
tr < 20 ns  
tf < 20 ns  
GND  
GND  
A0  
A1  
Output  
VS  
EN  
VOUT  
QINJ = CL ×  
VOUT  
Decoder  
A2  
VEN  
GND  
GND  
GND  
Figure 7-7. Charge-Injection Measurement Setup  
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7.9 Crosstalk  
The following are two types of crosstalk that can be defined for the devices:  
1. Intra-channel crosstalk (XTALK(INTRA)): the voltage at the source pin (Sx) of an off-switch input, when a  
1-VRMS signal is applied at the source pin of an on-switch input in the same channel, as shown in Figure 7-8.  
2. Inter-channel crosstalk (XTALK(INTER)): the voltage at the source pin (Sx) of an on-switch input, when a  
1-VRMS signal is applied at the source pin of an on-switch input in a different channel, as shown in Figure  
7-9. Inter-channel crosstalk applies only to the TMUX7309F device.  
VDD  
VSS  
0.1 µF  
GND  
0.1 µF  
GND  
VDD  
VSS  
Network Analyzer  
SW  
SW  
S1/S1X  
D/ DX  
VOUT  
S2/S2X  
RS  
RL  
Other  
Sx/ Dx  
Pins  
50Ω  
SW  
VS  
N.C.  
Ax, EN  
GND  
VAX  
VEN  
8176  
+JPN= F ?D=JJAH %NKOOP=HG = 20 × .KC  
8
5
Figure 7-8. Intra-channel Crosstalk Measurement Setup  
VDD  
VSS  
0.1 µF  
GND  
0.1 µF  
GND  
VDD  
VSS  
Network Analyzer  
SW  
SxA  
DA  
Other  
SxA Pins  
SW  
SW  
N.C.  
N.C.  
RS  
RL  
VOUT  
SxB  
DB  
Other  
SxB Pins  
SW  
50Ω  
RL  
VS  
Ax, EN  
GND  
VAX  
VEN  
8176  
+JPAN F ?D=JJAH %NKOOP=HG = 20 × .KC  
8
5
Figure 7-9. Inter-channel Crosstalk Measurement Setup  
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7.10 Bandwidth  
Bandwidth (BW) is defined as the range of frequencies that are attenuated by < 3 dB when the input is applied to  
the source pin (Sx) of an on-channel, and the output is measured at the drain pin (D or Dx) of the TMUX730xF.  
Figure 7-10 shows the setup used to measure bandwidth of the switch.  
VDD  
VSS  
0.1 µF  
GND  
0.1 µF  
VDD  
VSS  
Network Analyzer  
GND  
SW  
SW  
SX  
N.C.  
N.C.  
Other  
Sx/ Dx  
Pins  
RS  
SW  
VOUT  
D/ DX  
VS  
50Ω  
Ax, EN  
VAX  
VEN  
GND  
8176  
$=J@SE@PD = 20 × .KC  
8
5
Figure 7-10. Bandwidth Measurement Setup  
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8 Detailed Description  
8.1 Overview  
The TMUX7308F and TMUX7309F are a modern complementary metal-oxide semiconductor (CMOS) analog  
multiplexers in 8:1 (single ended) and 4:1 (differential) configurations. The devices work well with dual supplies  
(±5 V to ±22 V), a single supply (8 V to 44 V), or asymmetric supplies (such as VDD = 15 V, VSS = –5 V). The  
devices have an overvoltage protection feature on the source pins under powered and powered-off conditions,  
allowing them to be used in harsh industrial environments.  
8.2 Functional Block Diagram  
VDD  
VSS  
VDD  
VSS  
SW  
SW  
SW  
S1  
S2  
S1A  
DA  
DB  
SW  
SW  
S4A  
S1B  
D
SW  
SW  
S4B  
S8  
A1  
A2  
A3  
EN  
A1  
A2  
EN  
Fault Detection/  
Switch Driver/  
Logic Decoder  
Fault Detection/  
Switch Driver/  
Logic Decoder  
TMUX7308F  
TMUX7309F  
8.3 Feature Description  
8.3.1 Flat On – Resistance  
The TMUX7308F and TMUX7309F are designed with a special switch architecture to produce ultra-flat on-  
resistance (RON) across most of the switch input operation region. The flat RON response allows the device to  
be used in precision sensor applications since the RON is controlled regardless of the signals sampled. The  
architecture is implemented without a charge pump so no unwanted noise is produced from the device to affect  
sampling accuracy.  
8.3.2 Protection Features  
The TMUX7308F and TMUX7309F offer a number of protection features to enable robust system  
implementations.  
8.3.2.1 Input Voltage Tolerance  
The maximum voltage that can be applied to any source input pin is +60 V or -60 V, allowing the device to  
handle typical voltage fault conditions in industrial applications. It shall be cautioned that the device is rated to  
handle maximum stress of 85 V across different pins, such as the following:  
1. Between the source pins and supply rails:  
For example, if the device is powered by VDD supply of 20 V, then the maximum negative signal level on any  
source pin is –60 V to maintain the 60 V maximum rating on any source pin. If the device is powered by VDD  
supply of 40 V, then the maximum negative signal level on any source pin is reduced to –45 V to maintain  
the 85 V maximum rating across the source pin and the supply.  
2. Between the source pins and one or more drain pins:  
For example, if channel S1 is ON and the voltage on S1(A) pin is 40 V. In this case, the drain voltage is  
also 40 V. The maximum negative voltage on any of the other source pins is –45 V to maintain the 85 V  
maximum rating across the source pin and the drain pin.  
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8.3.2.2 Powered-Off Protection  
When the supplies of TMUX7308F and TMUX7309F are removed (VDD/ VSS = 0 V or floating), the source  
(Sx) pins of the device remain in the high impedance (Hi-Z) state, and the device performance remains within  
the leakage performance mentioned in the Electrical Specifications. Powered-off protection minimizes system  
complexity by removing the need to control power supply sequencing of the system. The feature prevents errant  
voltages on the input source pins from reaching the rest of the system and maintains isolation when the system  
is powering up. Without powered-off protection, signal on the input source pins can back-power the supply rails  
through internal ESD diodes and cause potential damage to the system.  
The switch remains OFF regardless of whether the VDD and VSS supplies are 0 V or floating. A GND reference  
must always be present to ensure proper operation. Source and drain voltage levels of up to ±60 V are blocked  
in the powered-off condition.  
8.3.2.3 Fail-Safe Logic  
Fail-safe logic circuitry allows voltages on the digital control pins to be applied before the supply pins, protecting  
the device from potential damage. The switch is specified to be in the OFF state, regardless of the state of the  
digital logic signals. The digital inputs are protected against positive faults of up to +44 V in the powered-off  
condition, but do not offer protection against the negative overvoltage condition.  
8.3.2.4 Overvoltage Protection and Detection  
The TMUX7308F and TMUX7309F detect overvoltage inputs by comparing the voltage on a source pin (Sx) with  
the supplies (VDD and VSS). A signal is considered overvoltage if it exceeds the supply voltages by the threshold  
voltage (VT).  
When an overvoltage is detected, the switch automatically turns OFF regardless of the digital logic controls. The  
source pin becomes high impedance and ensures only small leakage current flows through the switch. When  
the fault channel is selected by the digital logic control, the drain pin (D or Dx) is pulled to the supply that was  
exceeded. For example, if the source voltage exceeds VDD, the drain output is pulled to VDD. If the source  
voltage exceeds VSS, the drain output is pulled to VSS. The pull-up impedance is approximately 40 kΩ, and as a  
result, the drain current is limited to roughly 1 mA during a shorted load (to GND) condition. Figure depicts the  
protection structure of the device.  
8.3.2.5 Latch-Up Immunity  
Latch-up is a condition where a low impedance path is created between a supply pin and ground. This condition  
is caused by a trigger (current injection or overvoltage); but once activated, the low impedance path remains  
even after the trigger is no longer present. This low impedance path may cause system upset or catastrophic  
damage due to the excessive current levels. The latch-up condition typically requires a power cycle to eliminate  
the low impedance path.  
In the TMUX7308F and TMUX7309F devices, an insulating oxide layer is placed on top of the silicon substrate  
to prevent any parasitic junctions from forming. As a result, the devices are latch-up immune under all  
circumstances by device construction.  
8.3.2.6 EMC Protection  
The TMUX7308F and TMUX7309F are not intended for standalone electromagnetic compatibility (EMC)  
protection in industrial applications. There are three common high voltage transient specifications that govern  
industrial high voltage transient specification: IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and IEC61000-4-5  
(surge immunity). A transient voltage suppressor (TVS), along with some low-value series current limiting  
resistor, are required to prevent source input voltages from going above the rated ±60 V limits.  
When selecting a TVS protection device, it is critical to ensure that the maximum working voltage is greater than  
both the normal operating range of the input source pins to be protected and any known system common-mode  
overvoltage that may be present due to incorrect wiring, loss of power, or short circuit. Figure 8-1 shows one  
example of the proper design window when selecting a TVS device.  
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Region 1 denotes the normal operation region of TMUX7308F and TMUX7309F where the input source voltages  
stay below the fault supplies VFP and VFN. Region 2 represents the range of possible persistent DC (or long  
duration AC overvoltage fault) presented on the source input pins. Region 3 represents the margin between  
any known DC overvoltage level and the absolute maximum rating of the TMUX7308F and TMUX7309F. The  
selected TVS breakdown voltage must be less than the absolute maximum rating of the TMUX730xF but  
greater than any known possible persistent DC or long duration AC overvoltage fault to avoid triggering the  
TVS inadvertently. Region 4 represents the margin that system designers must impose when selecting the TVS  
protection device to prevent accidental triggering of the ESD cells of the TMUX7308F and TMUX7309F devices.  
Internal ESD  
Trigger Voltage  
4
Device Absolute  
Max Rating  
TVS  
Breakdown  
Voltage  
3
2
System  
Overvoltage  
Overvoltage  
Protection Window  
Positive Supply  
VDD  
0 V  
1
Normal Operation  
Negative Supply  
VSS  
2
3
4
System  
Overvoltage  
Overvoltage  
Protection Window  
TVS  
Breakdown  
Voltage  
Device Absolute  
Max Rating  
Internal ESD  
Trigger Voltage  
Figure 8-1. System Operation Regions and Proper Region of Selecting a TVS Protection Device  
8.3.3 Bidirectional and Rail-to-Rail Operation  
The TMUX7308F and TMUX7309F conducts equally well from source (Sx) to drain (D or Dx) or from drain (D or  
Dx) to source (Sx). Each signal path has very similar characteristics in both directions. However, take note that  
the overvoltage protection is implemented only on the source (Sx) side. The voltage on the drain is only allowed  
to swing between VDD and VSS and no overvoltage protection is available on the drain side.  
8.4 Device Functional Modes  
The TMUX7308F and TMUX7309F offers two modes of operation (Normal mode and Fault mode) depending on  
whether any of the input pins experience an overvoltage condition.  
8.4.1 Normal Mode  
In Normal mode operation, signals of up to VDD and VSS can be passed through the switch from source (Sx) to  
drain (D or Dx) or from drain (D or Dx) to source (Sx). The address (Ax) pins and the enable (EN) pin determines  
which switch path to turn on, according to Table 7-1 and Table 7-2. The following conditions must be satisfied for  
the switch to stay in the ON condition:  
The difference between the primary supplies (VDD – VSS) must be higher or equal to 8 V. With a minimum  
VDD of 5 V.  
The input signals on the source (Sx) or the drain (D or Dx) must be be between VFP+ VT and VFN – VT.  
The digital logic control (Ax and EN) must have selected the switch.  
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8.4.2 Fault Mode  
The TMUX7308F and TMUX7309F enter into the Fault mode when any of the input signals on the source  
(Sx) pins exceed VDD or VSS by a threshold voltage VT. Under the overvoltage condition, the switch input  
experiencing the fault automatically turns OFF regardless of the digital logic status, and the source pin becomes  
high impedance with a negligible amount of leakage current flowing through the switch. When the fault channel  
is selected by the digital logic control, the drain pin (D or Dx) is pulled to the supply that was exceeded through a  
40 kΩ internal resistor.  
The overvoltage protection is provided only for the source (Sx) input pins. The drain (D or Dx) pin, if used as a  
signal input, must stay in between VDD and VSS at all times since no overvoltage protection is implemented on  
the drain pin.  
9 Application and Implementation  
Note  
Information in the following applications sections is not part of the TI component specification,  
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for  
determining suitability of components for their purposes, as well as validating and testing their design  
implementation to confirm system functionality.  
9.1 Application Information  
The TMUX7308F and TMUX7309F are part of the fault protected switches and multiplexers family of devices.  
The abilty to protect downstream components from overvoltage events up to ±60 V makes these switches and  
multiplexers suitable for harsh environments.  
9.2 Typical Application  
In analog input programmable logic controllers (PLC) a multiplexer is often used to switch multiple sensors  
to a single ADC. By using a multiplexer, the number of components in the system can be reduced to save  
system cost and size. In a PLC module a ±10 V input signal range is common for interfacing with external field  
transmitters and sensors; however, there are a number of fault cases that may occur that can be damaging  
to many of the integrated circuits. Such fault conditions may include, but are not limited to, human error from  
wiring connections incorrectly, component failure or wire shorts, electromagnetic interference (EMI) or transient  
disturbances, and so forth.  
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Supply  
GND  
Power Module  
VDD  
VSS  
PLC Analog  
Input Module  
Bridge Sensor  
TMUX7308F  
S1  
S2  
S3  
S4  
S5  
S6  
S7  
S8  
5V  
REF5025  
Thermocouple  
Current Sensing  
D
Gain / Filter  
Network  
Fault  
Protected  
Mux Inputs  
Signal  
Processing  
ISO77xx  
ADS125H01  
Photo  
LED  
A2  
A1  
V
Detector  
A0  
GND  
1.8V Logic  
Signals  
Optical Sensor  
Sensors  
Figure 9-1. Typical Application  
Table 9-1. Design Parameters  
9.2.1 Design Requirements  
PARAMETER  
VALUE  
+15 V  
-15 V  
Positive supply (VDD) mux and ADC  
Negative supply (VSS) mux and ADC  
Power board supply voltage  
Input / output signal range non-faulted  
Overvoltage protection levels  
24 V  
-15 V to 15 V  
-60 V to 60 V  
Control logic thresholds  
Temperature range  
1.8 V compatible, up to 44 V  
-40°C to +125°C  
9.2.2 Detailed Design Procedure  
The image shows the case where an incorrect wiring condition occurred and one of the input connectors has  
been short to the power board supply voltage. If the board supply voltage is higher than the power supply of  
the multiplexer, then the TMUX7308F or TMUX7309F will disconnect the source input from passing the signal to  
protect the downstream ADC. The drain pin of the mux will be pulled up to the supply voltage VDD through a 40  
kΩ resistor to allow the ADC to determine a fault condition has occurred.  
10 Power Supply Recommendations  
The TMUX7308F and TMUX7309F operate across a wide supply range of ±5 V to ±22 V (8 V to 44 V in  
single-supply mode). They also perform well with asymmetrical supplies such as VDD = 15 V and VSS= –5 V. For  
improved supply noise immunity, use a supply decoupling capacitor ranging from 1 µF to 10 µF at both the VDD  
and VSS pins to ground. Always ensure the ground (GND) connection is established before supplies are ramped.  
As a best practice, it is recommended to ramp VSS first before VDD in dual or asymmetrical supply applications.  
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11 Layout  
11.1 Layout Guidelines  
The image below illustrates an example of a PCB layout with the TMUX7308F and TMUX7309F. Some key  
considerations are:  
Decouple the VDD and VSS pins with a 1-µF capacitor, placed as close to the pin as possible. Make sure that  
the capacitor voltage rating is sufficient for the VDD and VSS supplies.  
Keep the input lines as short as possible.  
Use a solid ground plane to help distribute heat and reduce electromagnetic interference (EMI) noise pickup.  
Do not run sensitive analog traces in parallel with digital traces. Avoid crossing digital and analog traces if  
possible, and only make perpendicular crossings when necessary.  
11.2 Layout Example  
Via to  
ground plane  
Via to  
ground plane  
A0  
EN  
VSS  
A1  
A2  
Wide (low inductance)  
trace for power  
C
Wide (low inductance)  
trace for power  
C
GND  
VDD  
S5  
Via to  
ground plane  
S1  
S2  
S3  
S4  
D
TMUX7308F  
S6  
S7  
S8  
Figure 11-1. TMUX7308F Layout Example  
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12 Device and Documentation Support  
12.1 Documentation Support  
12.1.1 Related Documentation  
Texas Instruments, ADS8664 12-Bit, 500-kSPS, 4- and 8-Channel, Single-Supply, SAR ADCs with Bipolar  
Input Ranges data sheet  
Texas Instruments, OPA140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz JFET Op Amp data  
sheet  
Texas Instruments, OPA192 36-V, Precision, Rail-to-Rail Input/Output, Low Offset Voltage, Low Input Bias  
Current Op Amp with e-Trim™ data sheet  
12.2 Receiving Notification of Documentation Updates  
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on  
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For  
change details, review the revision history included in any revised document.  
12.3 Support Resources  
TI E2Esupport forums are an engineer's go-to source for fast, verified answers and design help — straight  
from the experts. Search existing answers or ask your own question to get the quick design help you need.  
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do  
not necessarily reflect TI's views; see TI's Terms of Use.  
12.4 Trademarks  
TI E2Eis a trademark of Texas Instruments.  
All trademarks are the property of their respective owners.  
12.5 Electrostatic Discharge Caution  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled  
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric changes could cause the device not to meet its published  
specifications.  
12.6 Glossary  
TI Glossary  
This glossary lists and explains terms, acronyms, and definitions.  
13 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
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PACKAGE OUTLINE  
PW0016A  
TSSOP - 1.2 mm max height  
S
C
A
L
E
2
.
5
0
0
SMALL OUTLINE PACKAGE  
SEATING  
PLANE  
C
6.6  
6.2  
TYP  
A
0.1 C  
PIN 1 INDEX AREA  
14X 0.65  
16  
1
2X  
5.1  
4.9  
4.55  
NOTE 3  
8
9
0.30  
16X  
4.5  
4.3  
NOTE 4  
1.2 MAX  
0.19  
B
0.1  
C A B  
(0.15) TYP  
SEE DETAIL A  
0.25  
GAGE PLANE  
0.15  
0.05  
0.75  
0.50  
A
20  
0 -8  
DETAIL A  
TYPICAL  
4220204/A 02/2017  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed 0.15 mm per side.  
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.  
5. Reference JEDEC registration MO-153.  
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EXAMPLE BOARD LAYOUT  
PW0016A  
TSSOP - 1.2 mm max height  
SMALL OUTLINE PACKAGE  
SYMM  
16X (1.5)  
(R0.05) TYP  
16  
1
16X (0.45)  
SYMM  
14X (0.65)  
8
9
(5.8)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE: 10X  
METAL UNDER  
SOLDER MASK  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL  
EXPOSED METAL  
EXPOSED METAL  
0.05 MAX  
ALL AROUND  
0.05 MIN  
ALL AROUND  
NON-SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK  
DEFINED  
15.000  
SOLDER MASK DETAILS  
4220204/A 02/2017  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
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EXAMPLE STENCIL DESIGN  
PW0016A  
TSSOP - 1.2 mm max height  
SMALL OUTLINE PACKAGE  
16X (1.5)  
SYMM  
(R0.05) TYP  
16  
1
16X (0.45)  
SYMM  
14X (0.65)  
8
9
(5.8)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
SCALE: 10X  
4220204/A 02/2017  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
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PACKAGE OUTLINE  
RRP0016A  
WQFN - 0.8 mm max height  
S
C
A
L
E
3
.
0
0
0
PLASTIC QUAD FLATPACK - NO LEAD  
4.1  
3.9  
B
A
PIN 1 INDEX AREA  
4.1  
3.9  
0.8  
0.7  
C
SEATING PLANE  
0.08 C  
0.05  
0.00  
2X 1.95  
SYMM  
(0.2) TYP  
5
8
EXPOSED  
THERMAL PAD  
4
9
2X 1.95  
SYMM  
17  
2.6 0.1  
12X 0.65  
1
12  
0.35  
0.25  
PIN 1 ID  
16X  
13  
16  
0.1  
C A B  
0.45  
0.35  
0.05  
16X  
4224816/A 02/2019  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.  
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EXAMPLE BOARD LAYOUT  
RRP0016A  
WQFN - 0.8 mm max height  
PLASTIC QUAD FLATPACK - NO LEAD  
(
2.6)  
SYMM  
SEE SOLDER MASK  
DETAIL  
13  
16  
16X (0.6)  
1
12  
16X (0.3)  
17  
SYMM  
12X (0.65)  
(3.8)  
(1.05)  
4
9
(R0.05) TYP  
(
0.2) TYP  
VIA  
5
8
(1.05)  
(3.8)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE: 20X  
0.07 MIN  
ALL AROUND  
0.07 MAX  
ALL AROUND  
METAL UNDER  
SOLDER MASK  
METAL EDGE  
EXPOSED METAL  
SOLDER MASK  
OPENING  
EXPOSED  
METAL  
SOLDER MASK  
OPENING  
NON SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DEFINED  
SOLDER MASK DETAILS  
4224816/A 02/2019  
NOTES: (continued)  
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature  
number SLUA271 (www.ti.com/lit/slua271).  
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown  
on this view. It is recommended that vias under paste be filled, plugged or tented.  
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EXAMPLE STENCIL DESIGN  
RRP0016A  
WQFN - 0.8 mm max height  
PLASTIC QUAD FLATPACK - NO LEAD  
(0.675) TYP  
13  
16  
16X (0.6)  
1
12  
16X (0.3)  
(0.675) TYP  
(3.8)  
17  
SYMM  
12X (0.65)  
4X ( 1.15)  
9
4
(R0.05) TYP  
8
5
SYMM  
(3.8)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 MM THICK STENCIL  
SCALE: 20X  
EXPOSED PAD 17  
78% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE  
4224816/A 02/2019  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
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13.1 Tape and Reel Information  
REEL DIMENSIONS  
TAPE DIMENSIONS  
K0  
P1  
W
B0  
Reel  
Diameter  
Cavity  
A0  
A0 Dimension designed to accommodate the component width  
B0 Dimension designed to accommodate the component length  
K0 Dimension designed to accommodate the component thickness  
Overall width of the carrier tape  
P1 Pitch between successive cavity centers  
W
Reel Width (W1)  
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  
Sprocket Holes  
Q1 Q2  
Q3 Q4  
Q1 Q2  
Q3 Q4  
User Direction of Feed  
Pocket Quadrants  
Reel  
Diameter  
(mm)  
Reel  
Width W1  
(mm)  
Package  
Type  
Package  
Drawing  
A0  
(mm)  
B0  
(mm)  
K0  
(mm)  
P1  
(mm)  
W
(mm)  
Pin1  
Quadrant  
Device  
Pins  
SPQ  
TMUX7308FRRPR  
TMUX7308FPWR  
WQFN  
RRP  
PW  
16  
16  
3000  
2000  
330  
330  
12.4  
12.4  
4.25  
6.9  
4.25  
5.6  
1.15  
1.6  
8
8
12  
12  
Q2  
Q1  
TSSOP  
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TAPE AND REEL BOX DIMENSIONS  
Width (mm)  
H
W
L
Device  
Package Type  
Package Drawing Pins  
SPQ  
3000  
2000  
Length (mm) Width (mm)  
Height (mm)  
TMUX7308FRRPR  
TMUX7308FPWR  
WQFN  
RRP  
PW  
16  
16  
367  
367  
367  
367  
35  
35  
TSSOP  
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PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
PTMUX7308FPWR  
PTMUX7308FRRPR  
ACTIVE  
ACTIVE  
TSSOP  
WQFN  
PW  
16  
16  
2000  
3000  
TBD  
TBD  
Call TI  
Call TI  
Call TI  
-40 to 125  
-40 to 125  
RRP  
Call TI  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
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Addendum-Page 2  
IMPORTANT NOTICE AND DISCLAIMER  
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