TPD4E1U06_14 [TI]

Quad Channel High Speed ESD Protection Device;
TPD4E1U06_14
型号: TPD4E1U06_14
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

Quad Channel High Speed ESD Protection Device

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TPD4E1U06  
www.ti.com  
SLVSBQ9B DECEMBER 2012REVISED FEBRUARY 2013  
Quad Channel High Speed ESD Protection Device  
Check for Samples: TPD4E1U06  
1
FEATURES  
APPLICATIONS  
Provides System Level ESD Protection for  
Low-Voltage IO Interface  
USB2.0  
Ethernet  
IEC 61000-4-2 Level 4  
HDMI Control Lines  
MIPI Bus  
±15kV (Contact discharge)  
±15kV (Air-gap discharge)  
LVDS  
IO Capacitance 0.8pF (Typ)  
SATA  
DC Breakdown Voltage 6.5V (Min)  
Ultra low Leakage Current 10nA (Max)  
Low ESD Clamping Voltage  
D1-  
NC  
D2-  
6
5
4
1
2
D1+  
GND  
D2+  
6
5
4
D1-  
NC  
D1+  
1
2
Industrial Temperature Range: –40°C to 125°C  
GND  
D2+  
Small, Easy-to-Route DCK, DBV, and DGS  
Package  
3
3
D2-  
DCK  
2 mm x 2.1 mm x 0.95 mm  
(0.65-mm pitch)  
DBV  
2.9 mm x 2.8 x 1.45 mm  
(0.95-mm pitch)  
1
2
3
4
5
10  
9
8
7
6
DGS  
3 mm x 4.9 mm x 1.1mm  
(0.5-mm pitch)  
DESCRIPTION  
The TPD4E1U06 is a quad channel ultra low cap ESD protection device. It offers ±15KV IEC air-gap and ±15KV  
contact ESD protection. Its 0.8pF line capacitance makes it suitable for a wide range of applications. Typical  
application areas are HDMI, USB2.0, MHL, and DisplayPort.  
ORDERING INFORMATION  
TA  
PACKAGE(1)(2)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING  
–40°C to 125°C  
–40°C to 125°C  
–40°C to 125°C  
3000  
3000  
3000  
Tape and reel  
TPD4E1U06DCKR  
BPI  
NG4I  
TBD  
Tape and reel  
Tape and reel  
TPD4E1U06DBVR  
TPD4E1U06DGSR  
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
Web site at www.ti.com.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2012–2013, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
TPD4E1U06  
SLVSBQ9B DECEMBER 2012REVISED FEBRUARY 2013  
www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
FUNCTIONAL BLOCK DIAGRAM  
D1-  
D2+  
D1+  
D2-  
GND  
Figure 1. Circuit Schematic Diagram  
TERMINAL FUNCTIONS DCK/DBV  
PIN  
DESCRIPTION  
TYPE  
USAGE  
NAME  
D1+  
DBV/DCK  
DGS  
1
6
4
3
1
9
4
6
I/O  
D1–  
I/O  
Connect to data line as close to the  
connector as possible  
ESD protected channel  
I/O  
D2–  
D2+  
I/O  
Can be left floating, grounded, or connected  
to VCC  
NC  
5
2
2, 5, 7, 10  
3, 8  
I/O  
No connect  
Ground  
GND  
GND  
Connect to ground  
2
Submit Documentation Feedback  
Copyright © 2012–2013, Texas Instruments Incorporated  
Product Folder Links: TPD4E1U06  
TPD4E1U06  
www.ti.com  
SLVSBQ9B DECEMBER 2012REVISED FEBRUARY 2013  
ABSOLUTE MAXIMUM RATINGS  
over operating free-air temperature range (unless otherwise noted)  
MIN  
–40  
–65  
MAX  
125  
155  
±15  
±15  
3
UNIT  
°C  
°C  
kV  
kV  
A
Operating temperature range  
Storage temperature  
IEC 61000-4-2 contact ESD  
IEC 61000-4-2 air-gap ESD  
IPP, peak pulse current (tp = 8/20 μs)  
PPP, peak pulse power (tp = 8/20 μs)  
45  
W
ELECTRICAL CHARACTERISTICS  
over recommended operating free-air temperature range (unless otherwise noted)  
PARAMETER  
TEST CONDITION  
MIN  
TYP  
MAX UNIT  
VRWM  
Reverse stand-off voltage  
IIO = 10 µA  
5.5  
V
V
V
IPP = 1 A, tp = 8/20 μSec, from I/O to GND(1)  
IPP = 3A, tp = 8/20 μSec, from I/O to GND(1)  
Pin x to GND Pin(2)  
11  
15  
Clamp voltage with ESD  
strike  
VCLAMP  
1.0  
RDYN  
CL  
Dynamic resistance  
Line capacitance  
Ω
GND to Pin x  
0.6  
f = 1 MHz, VBIAS = 2.5 V, 25 °C  
0.8  
1
0.015  
0.025  
pF  
pF  
DCK package  
DBV package  
0.006  
0.01  
Channel to channel input  
capacitance  
Pin 2 = 0 V, f = 1 MHz, VBIAS = 2.5 V, between  
channel pins  
CCROSS  
Variation of channel input  
capacitance  
Pin 2 = 0V , f = 1 MHz, VBIAS = 2.5 V, channel_x pin to gnd – channel_y pin to  
gnd  
CIO-TO-GND  
0.025  
0.07  
pF  
Break-down voltage, IO to  
GND  
VBR  
IIO = 1 mA  
VIO = 2.5 V  
6.5  
8.5  
10  
V
ILEAK  
Leakage current  
1
nA  
(1) Non-repetitive current pulse 8/20 us exponentially decaying waveform according to IEC61000-4-5  
(2) Extraction of RDYN using least squares fit of TLP characteristics between I=10A and I=20A  
Copyright © 2012–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
3
Product Folder Links: TPD4E1U06  
 
TPD4E1U06  
SLVSBQ9B DECEMBER 2012REVISED FEBRUARY 2013  
www.ti.com  
TYPICAL CHARACTERISTICS  
30  
27  
24  
21  
18  
15  
12  
9
30  
27  
24  
21  
18  
15  
12  
9
6
6
3
3
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
C001  
C002  
Voltage (V)  
Voltage (V)  
Figure 2. TLP, Data to GND  
Figure 3. TLP, GND to Data  
180  
150  
120  
90  
60  
30  
0
œ30  
œ60  
œ90  
œ120  
œ150  
œ180  
60  
30  
0
œ30  
œ60  
œ20  
0
20 40 60 80 100 120 140 160 180 200 220  
œ20  
0
20 40 60 80 100 120 140 160 180 200 220  
C003  
C004  
Time (ns)  
Time (ns)  
Figure 4. IEC 61000-4-2 Clamping Voltage, +8kV Contact  
Figure 5. IEC 61000-4-2 Clamping Voltage, –8kV Contact  
1.0  
500  
TA = 25°C  
VIN = 2.5 V  
0.8  
450  
0.6  
0.4  
400  
350  
300  
250  
200  
150  
100  
50  
0.2  
0.0  
œ0.2  
œ0.4  
œ0.6  
œ0.8  
œ1.0  
0
œ2 œ1  
0
1
2
3
4
5
6
7
8
9
10  
œ55 œ35 œ15  
5
25  
45  
65  
85  
105 125  
C005  
C006  
Voltage (V)  
Temperature (°C)  
Figure 6. Diode Curve, TA = 25°C  
Figure 7. ILEAK vs. Temperature, VIN = 2.5 V  
4
Submit Documentation Feedback  
Copyright © 2012–2013, Texas Instruments Incorporated  
Product Folder Links: TPD4E1U06  
TPD4E1U06  
www.ti.com  
SLVSBQ9B DECEMBER 2012REVISED FEBRUARY 2013  
TYPICAL CHARACTERISTICS (continued)  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
Current  
Power  
f = 1 MHz  
0
œ5  
0
5
10 15 20 25 30 35 40 45 50  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
C008  
Time (s)  
C007  
VBIAS (V)  
Figure 8. Capacitance Across VBIAS, f = 1 MHz  
Figure 9. Surge Curve (tp = 8/20 μs), Pin IO to GND  
Figure 10. PCB Layout Recommendation  
Copyright © 2012–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Links: TPD4E1U06  
TPD4E1U06  
SLVSBQ9B DECEMBER 2012REVISED FEBRUARY 2013  
www.ti.com  
REVISION HISTORY  
Changes from Revision A (December 2012) to Revision B  
Page  
Added CCROSS data for DBV package ................................................................................................................................... 3  
6
Submit Documentation Feedback  
Copyright © 2012–2013, Texas Instruments Incorporated  
Product Folder Links: TPD4E1U06  
PACKAGE OPTION ADDENDUM  
www.ti.com  
21-Feb-2013  
PACKAGING INFORMATION  
Orderable Device  
TPD4E1U06DBVR  
TPD4E1U06DCKR  
Status Package Type Package Pins Package Qty  
Eco Plan Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-40 to 125  
Top-Side Markings  
Samples  
Drawing  
(1)  
(2)  
(3)  
(4)  
PREVIEW  
SOT-23  
SC70  
DBV  
6
6
3000  
3000  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
CU NIPDAU  
Level-1-260C-UNLIM  
ACTIVE  
DCK  
Green (RoHS  
& no Sb/Br)  
Level-1-260C-UNLIM  
-40 to 125 BPI  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) Only one of markings shown within the brackets will appear on the physical device.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
4-Mar-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TPD4E1U06DBVR  
TPD4E1U06DCKR  
TPD4E1U06DCKR  
SOT-23  
SC70  
DBV  
DCK  
DCK  
6
6
6
3000  
3000  
3000  
178.0  
180.0  
178.0  
9.0  
8.4  
9.0  
3.23  
2.25  
2.4  
3.17  
2.4  
1.37  
1.22  
1.2  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
Q3  
Q3  
Q3  
SC70  
2.5  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
4-Mar-2013  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TPD4E1U06DBVR  
TPD4E1U06DCKR  
TPD4E1U06DCKR  
SOT-23  
SC70  
DBV  
DCK  
DCK  
6
6
6
3000  
3000  
3000  
180.0  
202.0  
180.0  
180.0  
201.0  
180.0  
18.0  
28.0  
18.0  
SC70  
Pack Materials-Page 2  
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