TPS2020DRG4 [TI]

POWER-DISTRIBUTION SWITCHES; 配电开关
TPS2020DRG4
型号: TPS2020DRG4
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

POWER-DISTRIBUTION SWITCHES
配电开关

外围驱动器 驱动程序和接口 开关 接口集成电路 光电二极管
文件: 总29页 (文件大小:812K)
中文:  中文翻译
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TPS2020, TPS2021  
TPS2022, TPS2023, TPS2024  
www.ti.com  
SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
POWER-DISTRIBUTION SWITCHES  
1
FEATURES  
UL Listed - File No. E169910  
33-m(5-V Input) High-Side MOSFET Switch  
Short-Circuit and Thermal Protection  
Overcurrent Logic Output  
D OR P PACKAGE  
(TOP VIEW)  
GND  
IN  
OUT  
OUT  
OUT  
OC  
1
2
3
4
8
7
6
5
Operating Range . . . 2.7 V to 5.5 V  
Logic-Level Enable Input  
IN  
Typical Rise Time . . . 6.1 ms  
EN  
Undervoltage Lockout  
Maximum Standby Supply Current . . . 10 μA  
No Drain-Source Back-Gate Diode  
Available in 8-Pin SOIC and PDIP Packages  
Ambient Temperature Range, –40°C to 85°C  
2-kV Human-Body-Model, 200-V  
Machine-Model ESD Protection  
DESCRIPTION  
The TPS202x family of power distribution switches is intended for applications where heavy capacitive loads and  
short circuits are likely to be encountered. These devices are 50-mN-channel MOSFET high-side power  
switches. The switch is controlled by a logic enable compatible with 5-V logic and 3-V logic. Gate drive is  
provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize  
current surges during switching. The charge pump requires no external components and allows operation from  
supplies as low as 2.7 V.  
When the output load exceeds the current-limit threshold or a short is present, the TPS202x limits the output  
current to a safe level by switching into a constant-current mode, pulling the overcurrent (OC) logic output low.  
When continuous heavy overloads and short circuits increase the power dissipation in the switch, causing the  
junction temperature to rise, a thermal protection circuit shuts off the switch to prevent damage. Recovery from a  
thermal shutdown is automatic once the device has cooled sufficiently. Internal circuitry ensures the switch  
remains off until valid input voltage is present.  
The TPS202x devices differ only in short-circuit current threshold. The TPS2020 limits at 0.3-A load, the  
TPS2021 at 0.9-A load, the TPS2022 at 1.5-A load, the TPS2023 at 2.2-A load, and the TPS2024 at 3-A load  
(see Available Options). The TPS202x is available in an 8-pin small-outline integrated-circuit (SOIC) package  
and in an 8-pin dual in-line package (DIP) and operates over a junction temperature range of –40°C to 125°C.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 1998–2007, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
TPS2020, TPS2021  
TPS2022, TPS2023, TPS2024  
www.ti.com  
SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
Table 1. AVAILABLE OPTIONS  
PACKAGED DEVICES  
RECOMMENDED MAXIMUM  
CONTINUOUS LOAD  
CURRENT (A)  
TYPICAL SHORT-CIRCUIT  
CURRENT LIMIT AT 25°C  
(A)  
TA  
ENABLE  
SMALL OUTLINE  
(D)(1)  
PLASTIC DIP  
(P)  
0.2  
0.6  
1
0.3  
0.9  
1.5  
2.2  
3
TPS2020D  
TPS2021D  
TPS2022D  
TPS2023D  
TPS2024D  
TPS2020P  
TPS2021P  
TPS2022P  
TPS2023P  
TPS2024P  
–40°C to 85°C  
Active low  
1.5  
2
(1) The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2020DR)  
TPS2020 FUNCTIONAL BLOCK DIAGRAM  
Power Switch  
CS  
IN  
OUT  
Charge  
Pump  
Current  
Limit  
EN  
Driver  
OC  
UVLO  
Thermal  
Sense  
GND  
Current Sense  
TERMINAL FUNCTIONS  
TERMINAL  
NO.  
I/O  
DESCRIPTION  
NAME  
D OR P  
EN  
4
1
I
I
Enable input. Logic-low turns on power switch.  
Ground  
GND  
IN  
2, 3  
5
I
Input voltage  
OC  
O
O
Overcurrent. Logic output, active-low  
Power-switch output  
OUT  
6, 7, 8  
2
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Copyright © 1998–2007, Texas Instruments Incorporated  
Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024  
TPS2020, TPS2021  
TPS2022, TPS2023, TPS2024  
www.ti.com  
SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
DETAILED DESCRIPTION  
POWER SWITCH  
The power switch is an N-channel MOSFET with a maximum on-state resistance of 50 m(VI(IN) = 5 V).  
Configured as a high-side switch, the power switch prevents current flow from OUT to IN and IN to OUT when  
disabled.  
CHARGE PUMP  
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate  
of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires  
very little supply current.  
DRIVER  
The driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated  
electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and fall  
times of the output voltage. The rise and fall times are typically in the 2-ms to 9-ms range.  
ENABLE (EN)  
The logic enable disables the power switch, the bias for the charge pump, driver, and other circuitry to reduce the  
supply current to less than 10 μA when a logic-high is present on EN. A logic-zero input on EN restores bias to  
the drive and control circuits and turns the power on. The enable input is compatible with both TTL and CMOS  
logic levels.  
OVERCURRENT (OC)  
The OC open drain output is asserted (active low) when an overcurrent or overtemperature condition is  
encountered. The output remains asserted until the overcurrent or overtemperature condition is removed.  
CURRENT SENSE  
A sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than  
conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry  
sends a control signal to the driver. The driver, in turn, reduces the gate voltage and drives the power FET into  
its saturation region, which switches the output into a constant-current mode and holds the current constant while  
varying the voltage on the load.  
THERMAL SENSE  
An internal thermal-sense circuit shuts off the power switch when the junction temperature rises to approximately  
140°C. Hysteresis is built into the thermal sense circuit. After the device has cooled approximately 20°C, the  
switch turns back on. The switch continues to cycle off and on until the fault is removed.  
UNDERVOLTAGE LOCKOUT  
A voltage sense circuit monitors the input voltage. When the input voltage is below approximately 2 V, a control  
signal turns off the power switch.  
Copyright © 1998–2007, Texas Instruments Incorporated  
Submit Documentation Feedback  
3
Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024  
TPS2020, TPS2021  
TPS2022, TPS2023, TPS2024  
www.ti.com  
SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
ABSOLUTE MAXIMUM RATINGS  
over operating free-air temperature range (unless otherwise noted)(1)  
(2)  
VI(IN)  
Input voltage range  
–0.3 V to 6 V  
(2)  
VO(OUT)  
VI(EN)  
Output voltage range  
–0.3 V to VI(IN) + 0.3 V  
–0.3 V to 6 V  
Internally limited  
See Dissipation Rating Table  
–40°C to 125°C  
–65°C to 150°C  
260°C  
Input voltage range  
IO(OUT)  
Continuous output current  
Continuous total power dissipation  
Operating virtual junction temperature range  
Storage temperature range  
TJ  
Tstg  
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds  
Electrostatic discharge (ESD) protection:  
Human body model  
2 kV  
Machine model  
200 V  
Charged device model (CDM)  
750 V  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) All voltages are with respect to GND.  
DISSIPATION RATING TABLE  
T
A 25°C  
DERATING FACTOR  
ABOVE TA = 25°C  
TA = 70°C  
POWER RATING  
TA = 85°C  
POWER RATING  
PACKAGE  
POWER RATING  
D
P
725 mW  
5.8 mW/°C  
9.4 mW/°C  
464 mW  
752 mW  
377 mW  
611 mW  
1175 mW  
RECOMMENDED OPERATING CONDITIONS  
MIN  
2.7  
0
MAX UNIT  
VI(IN)  
5.5  
5.5  
0.2  
0.6  
1
V
V
Input voltage  
VI(EN)  
TPS2020  
0
TPS2021  
TPS2022  
TPS2023  
TPS2024  
0
IO  
Continuous output current  
0
A
0
1.5  
2
0
TJ  
Operating virtual junction temperature  
–40  
125  
°C  
4
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Copyright © 1998–2007, Texas Instruments Incorporated  
Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024  
TPS2020, TPS2021  
TPS2022, TPS2023, TPS2024  
www.ti.com  
SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
ELECTRICAL CHARACTERISTICS  
over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = rated current, EN = 0 V (unless otherwise noted)  
PARAMETER  
POWER SWITCH  
TEST CONDITIONS(1)  
MIN  
TYP MAX  
UNIT  
VI(IN) = 5 V, TJ = 25°C, IO = 1.8 A  
33  
38  
44  
37  
43  
51  
30  
35  
39  
33  
39  
44  
6.1  
8.6  
3.4  
3
36  
46  
50  
41  
52  
61  
34  
41  
47  
37  
46  
56  
VI(IN) = 5 V, TJ = 85°C, IO = 1.8 A  
VI(IN) = 5 V, TJ = 125°C, IO = 1.8 A  
VI(IN) = 3.3 V, TJ = 25°C, IO = 1.8 A  
VI(IN) = 3.3 V, TJ = 85°C, IO = 1.8 A  
VI(IN) = 3.3 V, TJ = 125°C, IO = 1.8 A  
VI(IN) = 5 V, TJ = 25°C, IO = 0.18 A  
Static drain-source on-state  
resistance  
rDS(on)  
mΩ  
VI(IN) = 5 V, TJ = 85°C, IO = 0.18 A  
VI(IN) = 5 V, TJ = 125°C, IO = 0.18 A  
VI(IN) = 3.3 V, TJ = 25°C, IO = 0.18 A  
VI(IN) = 3.3 V, TJ = 85°C, IO = 0.18 A  
VI(IN) = 3.3 V, TJ = 125°C, IO = 0.18 A  
VI(IN) = 5.5 V, CL = 1 μF, TJ = 25°C, RL = 10 Ω  
VI(IN) = 2.7 V, CL = 1 μF, TJ = 25°C, RL = 10 Ω  
VI(IN) = 5.5 V, CL = 1 μF, TJ = 25°C, RL = 10 Ω  
VI(IN) = 2.7 V, CL = 1 μF, TJ = 25°C, RL = 10 Ω  
tr  
tf  
Rise time, output  
Fall time, output  
ms  
ms  
ENABLE INPUT (EN)  
VIH  
High-level input voltage  
2.7 VVI(IN) 5.5 V  
4.5 V VI(IN) 5.5 V  
2.7 V VI(IN) 4.5 V  
EN= 0 V or EN = VI(IN)  
CL = 100 μF, RL= 10 Ω  
CL = 100 μF, RL= 10 Ω  
2
V
V
0.8  
0.5  
0.5  
20  
VIL  
Low-level input voltage  
II  
Input current  
Turnon time  
Turnoff time  
–0.5  
μA  
ms  
ton  
toff  
40  
CURRENT LIMIT  
TPS2020  
0.22  
0.66  
1.1  
0.3  
0.9  
1.5  
2.2  
3
0.4  
1.1  
1.8  
2.7  
3.8  
TPS2021  
TJ = 25°C, VI = 5.5 V,  
IOS  
Short-circuit output current  
OUT connected to GND,  
TPS2022  
TPS2023  
TPS2024  
A
Device enabled into short circuit  
1.65  
2.2  
SUPPLY CURRENT  
TJ = 25°C  
0.3  
1
10  
Supply current, low-level output  
No load on OUT EN = VI(IN)  
No load on OUT EN = 0 V  
μA  
–40°C TJ ≤  
125°C  
TJ = 25°C  
58  
75  
75  
Supply current, high-level output  
Leakage current  
μA  
μA  
–40°C TJ ≤  
125°C  
100  
OUT connected  
EN = VI(IN)  
–40°C TJ ≤  
125°C  
10  
to ground  
UNDERVOLTAGE LOCKOUT  
Low-level input voltage  
Hysteresis  
2
2.5  
V
TJ = 25°C  
100  
mV  
OVERCURRENT (OC)  
Output low voltage  
Off-state current(2)  
IO = 10 mA, VOL(OC)  
VO = 5 V, VO = 3.3 V  
0.4  
1
V
μA  
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account  
separately.  
(2) Specified by design, not production tested.  
Copyright © 1998–2007, Texas Instruments Incorporated  
Submit Documentation Feedback  
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Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024  
TPS2020, TPS2021  
TPS2022, TPS2023, TPS2024  
www.ti.com  
SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
PARAMETER MEASURMENT INFORMATION  
OUT  
t
f
t
r
RL  
CL  
V
90%  
10%  
O(OUT)  
90%  
10%  
TEST CIRCUIT  
50%  
90%  
50%  
V
I(EN)  
t
off  
t
on  
V
O(OUT)  
10%  
VOLTAGE WAVEFORMS  
Figure 1. Test Circuit and Voltage Waveforms  
6
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Copyright © 1998–2007, Texas Instruments Incorporated  
Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024  
TPS2020, TPS2021  
TPS2022, TPS2023, TPS2024  
www.ti.com  
SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
PARAMETER MEASURMENT INFORMATION (continued)  
TABLE OF TIMING DIAGRAMS  
FIGURE  
Turnon Delay and Rise TIme  
2
Turnoff Delay and Fall Time  
3
Turnon Delay and Rise TIme with 1-μF Load  
Turnoff Delay and Rise TIme with 1-μF Load  
Device Enabled into Short  
4
5
6
7, 8, 9, 10,  
TPS2020, TPS2021, TPS2022, TPS2023, and TPS2024, Ramped Load on Enabled Device  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
TPS2024, Inrush Current  
7.9-Load Connected to an Enabled TPS2020 Device  
3.7-Load Connected to an Enabled TPS2020 Device  
3.7-Load Connected to an Enabled TPS2021 Device  
2.6-Load Connected to an Enabled TPS2021 Device  
2.6-Load Connected to an Enabled TPS2022 Device  
1.2-Load Connected to an Enabled TPS2022 Device  
1.2-Load Connected to an Enabled TPS2023 Device  
0.9-Load Connected to an Enabled TPS2023 Device  
0.9-Load Connected to an Enabled TPS2024 Device  
0.5-Load Connected to an Enabled TPS2024 Device  
V
I(EN)  
(5 V/div)  
V
I(EN)  
(5 V/div)  
V
I(EN)  
V
I(EN)  
V
R
T
A
= 5 V  
= 27 Ω  
= 25°C  
I(IN)  
L
V
(2 V/div)  
V
(2 V/div)  
O(OUT)  
O(OUT)  
V
R
T
A
= 5 V  
= 27  
= 25°C  
IN  
V
V
L
O(OUT)  
O(OUT)  
0
2
4
6
8
10 12 14 16 18 20  
0
2
4
6
8
10 12 14 16 18  
t − Time − ms  
Figure 2. Turnon Delay and Rise Time  
20  
t − Time − ms  
Figure 3. Turnoff Delay and Fall Time  
Copyright © 1998–2007, Texas Instruments Incorporated  
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Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024  
TPS2020, TPS2021  
TPS2022, TPS2023, TPS2024  
www.ti.com  
SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
V
I(EN)  
(5 V/div)  
V
I(EN)  
(5 V/div)  
V
I(EN)  
V
I(EN)  
V
(2 V/div)  
V
(2 V/div)  
V
O(OUT)  
O(OUT)  
V
= 5 V  
= 1 µF  
= 27 Ω  
= 25°C  
= 5 V  
I(IN)  
I(IN)  
C
R
T
C
L
= 1 µF  
L
L
R = 27 Ω  
V
V
L
O(OUT)  
O(OUT)  
T
A
= 25°C  
A
0
2
0
2
4
6
8
t − Time − ms  
Figure 4. Turnon Delay and Rise Time with 1-μF Load  
10 12 14 16 18  
20  
4
6
8
10 12 14 16 18  
t − Time − ms  
Figure 5. Turnoff Delay and Fall Time with 1-μF Load  
20  
V
O(OC)  
(5 V/div)  
V
I(EN)  
V
I(EN)  
(5 V/div)  
V
O(OC)  
V
T
= 5 V  
= 25°C  
V
T
A
= 5 V  
= 25°C  
I(IN)  
I(IN)  
A
TPS2024  
TPS2023  
TPS2022  
I
(500 mA/div)  
O(OUT)  
TPS2021  
TPS2020  
I
I
O(OUT)  
O(OUT)  
I
(1 A/div)  
O(OUT)  
0
20 40 60 80 100 120 140 160 180 200  
t − Time − ms  
0
1
2
3
4
5
6
7
8
9
10  
t − Time − ms  
Figure 6. Device Enabled Into Short  
Figure 7. TPS2020, Ramped Load on Enabled Device  
8
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Copyright © 1998–2007, Texas Instruments Incorporated  
Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024  
 
TPS2020, TPS2021  
TPS2022, TPS2023, TPS2024  
www.ti.com  
SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
V
O(OC)  
(5 V/div)  
V
O(OC)  
(5 V/div)  
V
O(OC)  
V
O(OC)  
V
T
A
= 5 V  
= 25°C  
V
T
= 5 V  
= 25°C  
I(IN)  
I(IN)  
A
I
(1 A/div)  
O(OUT)  
I
(1 A/div)  
O(OUT)  
I
I
O(OUT)  
O(OUT)  
0
20 40 60 80 100 120 140 160 180 200  
t − Time − ms  
0
20 40 60 80 100 120 140 160 180 200  
t − Time − ms  
Figure 8. TPS2021, Ramped Load on Enabled Device  
Figure 9. TPS2022, Ramped Load on Enabled Device  
V
O(OC)  
(5 V/div)  
V
O(OC)  
(5 V/div)  
V
O(OC)  
V
O(OC)  
V
T
A
= 5 V  
= 25°C  
I(IN)  
V
T
A
= 5 V  
= 25°C  
I(IN)  
I
(1 A/div)  
I
(1 A/div)  
O(OUT)  
O(OUT)  
I
I
O(OUT)  
O(OUT)  
0
20 40 60 80 100 120 140 160 180 200  
t − Time − ms  
0
20 40 60 80 100 120 140 160 180 200  
t − Time − ms  
Figure 10. TPS2023, Ramped Load on Enabled Device  
Figure 11. TPS2024, Ramped Load on Enabled Device  
Copyright © 1998–2007, Texas Instruments Incorporated  
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Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024  
TPS2020, TPS2021  
TPS2022, TPS2023, TPS2024  
www.ti.com  
SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
V
I(EN)  
V
O(OC)  
(5 V/div)  
V
I(EN)  
(5 V/div)  
V
O(OC)  
I
(200 mA/div)  
O(OUT)  
470 µF  
150 µF  
I
(500 mA/div)  
I(IN)  
V
I(IN)  
= 5 V  
R
T
A
= 7.9 Ω  
= 25°C  
I
I
L
I(IN)  
O(OUT)  
R = 10 Ω  
L
47 µF  
T
= 25°C  
A
0
1
2
3
4
5
6
7
8
9
10  
0
200 400 600 800 1000 1200 1400 1600 1800 2000  
t − Time − ms  
Figure 12. TPS2024, Inrush Current  
t − Time − µs  
Figure 13. 7.9-Load Connected to an Enabled TPS2020  
Device  
V
O(OC)  
(5 V/div)  
V
O(OC)  
(5 V/div)  
V
O(OC)  
V
O(OC)  
V
R
T
= 5 V  
= 3.7  
= 25°C  
V
= 5 V  
= 3.7  
= 25°C  
I(IN)  
I(IN)  
R
T
L
L
A
A
I
(500 mA/div)  
O(OUT)  
I
(1 A/div)  
O(OUT)  
I
I
O(OUT)  
O(OUT)  
0
50 100 150 200 250 300 350 400 450 500  
0
200 400 600 800 1000 1200 1400 1600 1800 2000  
t − Time − µs  
t − Time − µs  
Figure 14. 3.7-Load Connected to an Enabled TPS2020  
Figure 15. 3.7-Load Connected to an Enabled TPS2021  
Device  
Device  
10  
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Copyright © 1998–2007, Texas Instruments Incorporated  
Product Folder Link(s): TPS2020 TPS2021 TPS2022 TPS2023 TPS2024  
TPS2020, TPS2021  
TPS2022, TPS2023, TPS2024  
www.ti.com  
SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
V
O(OC)  
V
O(OC)  
(5 V/div)  
V
O(OC)  
(5 V/div)  
V
O(OC)  
V
= 5 V  
= 2.6 Ω  
= 25°C  
V
= 5 V  
= 2.6 Ω  
= 25°C  
I(IN)  
I(IN)  
R
T
R
T
L
L
A
A
I
(1 A/div)  
I
(1 A/div)  
O(OUT)  
O(OUT)  
I
I
O(OUT)  
O(OUT)  
0
50 100 150 200 250 300 350 400 450 500  
0
200 400 600 800 1000 1200 1400 1600 1800 2000  
t − Time − µs  
t − Time − µs  
Figure 16. 2.6-Load Connected to an Enabled TPS2021  
Figure 17. 2.6-Load Connected to an Enabled TPS2022  
Device  
Device  
V
O(OC)  
(5 V/div)  
V
O(OC)  
(5 V/div)  
V
O(OC)  
V
O(OC)  
V
R
T
A
= 5 V  
= 1.2  
= 25°C  
I(IN)  
L
I
(1 A/div)  
O(OUT)  
I
(2 A/div)  
O(OUT)  
V
R
T
A
= 5 V  
= 1.2  
= 25°C  
I(IN)  
I
I
O(OUT)  
O(OUT)  
L
0
100 200 300 400 500 600 700 800 900 1000  
0
100 200 300 400 500 600 700 800 900 1000  
t − Time − µs  
t − Time − µs  
Figure 18. 1.2-Load Connected to an Enabled TPS2022  
Figure 19. 1.2-Load Connected to an Enabled TPS2023  
Device  
Device  
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SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
V
O(OC)  
(5 V/div)  
V
O(OC)  
(5 V/div)  
V
O(OC)  
V
O(OC)  
V
= 5 V  
= 0.9  
= 25°C  
V
R
T
= 5 V  
= 0.9 Ω  
= 25°C  
I(IN)  
I(IN)  
R
T
L
L
A
A
I
(2 A/div)  
O(OUT)  
I
(5 A/div)  
O(OUT)  
I
I
O(OUT)  
O(OUT)  
0
100 200 300 400 500 600 700 800 900 1000  
0
100 200 300 400 500 600 700 800 900 1000  
t − Time − µs  
t − Time − µs  
Figure 20. 0.9-Load Connected to an Enabled TPS2023  
Figure 21. 0.9-Load Connected to an Enabled TPS2024  
Device  
Device  
V
O(OC)  
(5 V/div)  
V
O(OC)  
V
R
T
A
= 5 V  
= 0.5  
= 25°C  
I(IN)  
L
I
(5 A/div)  
O(OUT)  
I
O(OUT)  
0
50 100 150 200 250 300 350 400 450 500  
t − Time − µs  
Figure 22. 0.5-Load Connected to an Enabled TPS2024  
Device  
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SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
TYPICAL CHARACTERISTICS  
TABLE OF GRAPHS  
FIGURE  
23  
td(on)  
td(off)  
tr  
Turnon delay time  
vs Output voltage  
Turnoff delay time  
Rise time  
vs Input voltage  
24  
vs Load current  
25  
tf  
Fall time  
vs Load current  
26  
Supply current (enabled)  
Supply current (disabled)  
Supply current (enabled)  
Supply current (disabled)  
vs Junction temperature  
vs Junction temperature  
vs Input voltage  
27  
28  
29  
vs Input voltage  
30  
vs Input voltage  
31  
IOS  
Short-circuit current limit  
vs Junction temperature  
vs Input voltage  
32  
33  
vs Junction temperature  
vs Input voltage  
34  
rDS(on)  
Static drain-source on-state resistance  
Input voltage  
35  
vs Junction temperature  
Undervoltage lockout  
36  
VI  
37  
TURNON DELAY TIME  
vs  
OUTPUT VOLTAGE  
TURNOFF DELAY TIME  
vs  
INPUT VOLTAGE  
7.5  
7
18  
T
C
= 25°C  
= 1 µF  
A
T
C
= 25°C  
= 1 µF  
A
L
L
6.5  
6
17.5  
17  
5.5  
5
4.5  
16.5  
16  
4
3.5  
2.5  
3
3.5  
4
4.5  
5
5.5  
6
2.5  
3
3.5  
4
4.5  
5
5.5  
6
V − Input Voltage − V  
I
V − Input Voltage − V  
I
Figure 23.  
Figure 24.  
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SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
RISE TIME  
vs  
LOAD CURRENT  
FALL TIME  
vs  
LOAD CURRENT  
6.5  
3.5  
T
C
= 25°C  
= 1 µF  
A
T
C
= 25°C  
= 1 µF  
A
L
L
3.25  
3
6
5.5  
2.75  
2.5  
5
0
0.5  
1
1.5  
2
0
0.5  
1
1.5  
2
I − Load Current − A  
L
I − Load Current − A  
L
Figure 25.  
Figure 26.  
SUPPLY CURRENT (ENABLED)  
vs  
JUNCTION TEMPERATURE  
SUPPLY CURRENT (DISABLED)  
vs  
JUNCTION TEMPERATURE  
75  
65  
5
4
3
2
V
= 5.5 V  
I(IN)  
V
= 5 V  
I(IN)  
V
= 5.5 V  
I(IN)  
V
I(IN)  
= 5 V  
55  
1
V
I(IN)  
= 4 V  
V
= 4 V  
45  
35  
I(IN)  
V
= 3.3 V  
I(IN)  
V
= 3.3 V  
I(IN)  
0
V
= 2.7 V  
I(IN)  
V
= 2.7 V  
I(IN)  
−1  
−50 −25  
0
25  
50  
75  
100 125 150  
−50 −25  
0
25  
50  
75  
100  
150  
125  
T − Junction Temperature − °C  
J
T − Junction Temperature − °C  
J
Figure 27.  
Figure 28.  
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SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
SUPPLY CURRENT (ENABLED)  
SUPPLY CURRENT (DISABLED)  
vs  
vs  
INPUT VOLTAGE  
INPUT VOLTAGE  
75  
65  
5
4
3
2
T = 125°C  
J
T = 125°C  
J
T = 85°C  
J
T = 85°C  
J
55  
45  
1
T = 25°C  
J
T = 25°C  
J
0
T = 0°C  
J
T = 0°C  
J
T = −40°C  
J
T = −40°C  
J
35  
−1  
2.5  
3
3.5  
4
4.5  
5
5.5  
6
2.5  
3
3.5  
4
4.5  
5
5.5  
6
V − Input Voltage − V  
I
V − Input Voltage − V  
I
Figure 29.  
Figure 30.  
SHORT-CIRCUIT CURRENT LIMIT  
SHORT-CIRCUIT CURRENT LIMIT  
vs  
vs  
INPUT VOLTAGE  
JUNCTION TEMPERATURE  
3.5  
3.5  
T
A
= 25°C  
TPS2024  
TPS2024  
3
3
2.5  
2.5  
TPS2023  
TPS2022  
TPS2023  
TPS2022  
2
1.5  
1
2
1.5  
1
TPS2021  
TPS2020  
TPS2021  
TPS2020  
0.5  
0.5  
0
0
2
3
4
5
6
−50  
−25  
0
25  
50  
75  
100  
V − Input Voltage − V  
I
T − Junction Temperature − °C  
J
Figure 31.  
Figure 32.  
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SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
STATIC DRAIN-SOURCE ON-STATE RESISTANCE  
STATIC DRAIN-SOURCE ON-STATE RESISTANCE  
vs  
vs  
INPUT VOLTAGE  
JUNCTION TEMPERATURE  
60  
60  
I
O
= 0.18 A  
I
O
= 0.18 A  
50  
40  
50  
40  
V = 2.7 V  
I
T = 125°C  
J
V = 3.3 V  
I
T = 25°C  
J
30  
20  
V = 5.5 V  
30  
20  
I
T = −40°C  
J
−50 −25  
0
25  
50  
75 100 125 150  
2.5  
3
3.5  
4
4.5  
5
5.5  
6
T − Junction Temperature − °C  
J
V − Input Voltage − V  
I
Figure 33.  
Figure 34.  
STATIC DRAIN-SOURCE ON-STATE RESISTANCE  
STATIC DRAIN-SOURCE ON-STATE RESISTANCE  
vs  
vs  
INPUT VOLTAGE  
JUNCTION TEMPERATURE  
60  
50  
40  
60  
I
O
= 1.8 A  
I
O
= 1.8 A  
50  
40  
T = 125°C  
J
V = 3.3 V  
I
V = 4 V  
I
V = 5.5 V  
I
T = 25°C  
J
T = −40°C  
J
30  
20  
30  
20  
3
3.5  
4
4.5  
5
5.5  
6
−50 −25  
0
25  
50  
75 100 125 150  
V − Input Voltage − V  
I
T − Junction Temperature − °C  
J
Figure 35.  
Figure 36.  
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SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
UNDERVOLTAGE LOCKOUT  
2.5  
2.4  
2.3  
Start Threshold  
Stop Threshold  
2.2  
2.1  
2
−50  
0
50  
100  
150  
T − Temperature − °C  
J
Figure 37.  
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SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
APPLICATION INFORMATION  
TPS2024  
2,3  
0.1 µF  
Power Supply  
2.7 V to 5.5 V  
IN  
6,7,8  
Load  
OUT  
10 kΩ  
0.1 µF  
22 µF  
5
4
OC  
EN  
GND  
1
Figure 38. Typical Application  
POWER SUPPLY CONSIDERATIONS  
A 0.01-μF to 0.1-μF ceramic bypass capacitor between IN and GND, close to the device, is recommended.  
Placing a high-value electrolytic capacitor on the output and input pins is recommended when the output load is  
heavy. This precaution reduces power supply transients that may cause ringing on the input. Additionally,  
bypassing the output with a 0.01-μF to 0.1-μF ceramic capacitor improves the immunity of the device to  
short-circuit transients.  
OVERCURRENT  
A sense FET checks for overcurrent conditions. Unlike current-sense resistors, sense FETs do not increase the  
series resistance of the current path. When an overcurrent condition is detected, the device maintains a constant  
output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault is present  
long enough to activate thermal limiting.  
Three possible overload conditions can occur. In the first condition, the output has been shorted before the  
device is enabled or before VI(IN) has been applied, see Figure 6. The TPS202x senses the short and  
immediately switches into a constant-current output.  
In the second condition, the excessive load occurs while the device is enabled. At the instant the excessive load  
occurs, very high currents may flow for a short time before the current-limit circuit can react (see Figures 13–22).  
After the current-limit circuit has tripped (reached the overcurrent trip threshhold) the device switches into  
constant-current mode.  
In the third condition, the load has been gradually increased beyond the recommended operating current. The  
current is permitted to rise until the current-limit threshold is reached or until the thermal limit of the device is  
exceeded (see Figures 7–11). The TPS202x is capable of delivering current up to the current-limit threshold  
without damaging the device. Once the threshold has been reached, the device switches into its constant-current  
mode.  
OC RESPONSE  
The OC open-drain output is asserted (active low) when an overcurrent or overtemperature condition is  
encountered. The output remains asserted until the overcurrent or overtemperature condition is removed.  
Connecting a heavy capacitive load to an enabled device can cause momentary false overcurrent reporting from  
the inrush current flowing through the device, charging the downstream capacitor. An RC filter can be connected  
to the OC pin to reduce false overcurrent reporting. Using low-ESR electrolytic capacitors on the output lowers  
the inrush current flow through the device during hot-plug events by providing a low impedance energy source,  
thereby reducing erroneous overcurrent reporting.  
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SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
TPS202x  
GND  
TPS202x  
V+  
V+  
OUT  
OUT  
OUT  
OC  
GND  
OUT  
OUT  
OUT  
OC  
R
pullup  
IN  
IN  
R
pullup  
IN  
IN  
R
filter  
EN  
EN  
C
filter  
Figure 39. Typical Circuit for OC Pin and RC Filter for Damping Inrush OC Responses  
POWER DISSIPATION AND JUNCTION TEMPERATURE  
The low on-resistance on the n-channel MOSFET allows small surface-mount packages, such as SOIC, to pass  
large currents. The thermal resistances of these packages are high compared to those of power packages; it is  
good design practice to check power dissipation and junction temperature. The first step is to find rDS(on) at the  
input voltage and operating temperature. As an initial estimate, use the highest operating ambient temperature of  
interest and read rDS(on) from Figures 33–36. Next, calculate the power dissipation using:  
PD = rDS(on) × I2  
Finally, calculate the junction temperature:  
TJ = PD × RθJA + TA  
where:  
TA = Ambient temperature °C  
RθJA = Thermal resistance—SOIC = 172°C/W, PDIP = 106°C/W  
Compare the calculated junction temperature with the initial estimate. If they do not agree within a few degrees,  
repeat the calculation, using the calculated value as the new estimate. Two or three iterations are generally  
sufficient to get an acceptable answer.  
THERMAL PROTECTION  
Thermal protection prevents damage to the IC when heavy-overload or short-circuit faults are present for  
extended periods of time. The faults force the TPS202x into constant current mode, which causes the voltage  
across the high-side switch to increase; under short-circuit conditions, the voltage across the switch is equal to  
the input voltage. The increased dissipation causes the junction temperature to rise to high levels. The protection  
circuit senses the junction temperature of the switch and shuts it off. Hysteresis is built into the thermal sense  
circuit, and after the device has cooled approximately 20 degrees, the switch turns back on. The switch continues  
to cycle in this manner until the load fault or input power is removed.  
UNDERVOLTAGE LOCKOUT (UVLO)  
An undervoltage lockout ensures that the power switch is in the off state at powerup. Whenever the input voltage  
falls below approximately 2 V, the power switch is quickly turned off. This facilitates the design of hot-insertion  
systems where it is not possible to turn off the power switch before input power is removed. The UVLO also  
keeps the switch from being turned on until the power supply has reached at least 2 V, even if the switch is  
enabled. Upon reinsertion, the power switch is turned on, with a controlled rise time to reduce EMI and voltage  
overshoots.  
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SLVS175CDECEMBER 1998REVISED SEPTEMBER 2007  
GENERIC HOT-PLUG APPLICATIONS (See Figure 40)  
In many applications it may be necessary to remove modules or pc boards while the main unit is still operating.  
These are considered hot-plug applications. Such implementations require the control of current surges seen by  
the main power supply and the card being inserted. The most effective way to control these surges is to limit and  
slowly ramp the current and voltage being applied to the card, similar to the way in which a power supply  
normally turns on. Because of the controlled rise times and fall times of the TPS202x series, these devices can  
be used to provide a softer start-up to devices being hot-plugged into a powered system. The UVLO feature of  
the TPS202x also ensures the switch is off after the card has been removed, and the switch remains off during  
the next insertion. The UVLO feature ensures a soft start with a controlled rise time for every insertion of the card  
or module.  
PC Board  
TPS2024  
Power  
Supply  
Block of  
Circuitry  
GND  
OUT  
OUT  
OUT  
OC  
IN  
2.7 V to 5.5 V  
0.1 µF  
1000 µF  
Optimum  
IN  
EN  
Overcurrent Response  
Figure 40. Typical Hot-Plug Implementation  
By placing the TPS202x between the VCC input and the rest of the circuitry, the input power reaches this device  
first after insertion. The typical rise time of the switch is approximately 9 ms, providing a slow voltage ramp at the  
output of the device. This implementation controls system surge currents and provides a hot-plugging  
mechanism for any device.  
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PACKAGE OPTION ADDENDUM  
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28-Aug-2010  
PACKAGING INFORMATION  
Status (1)  
Eco Plan (2)  
MSL Peak Temp (3)  
Samples  
Orderable Device  
Package Type Package  
Drawing  
Pins  
Package Qty  
Lead/  
Ball Finish  
(Requires Login)  
TPS2020D  
TPS2020DG4  
TPS2020DR  
TPS2020DRG4  
TPS2021D  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
D
D
D
D
D
D
D
D
8
8
8
8
8
8
8
8
75  
75  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU Level-1-260C-UNLIM  
Request Free Samples  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
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Purchase Samples  
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Purchase Samples  
Purchase Samples  
2500  
2500  
75  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
TPS2021DG4  
TPS2021DR  
TPS2021DRG4  
75  
Green (RoHS  
& no Sb/Br)  
2500  
2500  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
TPS2021P  
TPS2021PE4  
TPS2022D  
ACTIVE  
ACTIVE  
ACTIVE  
PDIP  
PDIP  
SOIC  
P
P
D
8
8
8
50  
50  
75  
Pb-Free (RoHS)  
Pb-Free (RoHS)  
CU NIPDAU N / A for Pkg Type  
CU NIPDAU N / A for Pkg Type  
CU NIPDAU Level-1-260C-UNLIM  
Purchase Samples  
Purchase Samples  
Green (RoHS  
& no Sb/Br)  
Request Free Samples  
TPS2022DG4  
TPS2022DR  
TPS2022DRG4  
TPS2023D  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
D
D
D
D
D
D
D
8
8
8
8
8
8
8
75  
2500  
2500  
75  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
Request Free Samples  
Purchase Samples  
Purchase Samples  
Request Free Samples  
Request Free Samples  
Purchase Samples  
Purchase Samples  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
TPS2023DG4  
TPS2023DR  
TPS2023DRG4  
75  
Green (RoHS  
& no Sb/Br)  
2500  
2500  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
28-Aug-2010  
Status (1)  
Eco Plan (2)  
MSL Peak Temp (3)  
Samples  
Orderable Device  
Package Type Package  
Drawing  
Pins  
Package Qty  
Lead/  
Ball Finish  
(Requires Login)  
Purchase Samples  
Purchase Samples  
Purchase Samples  
TPS2023P  
TPS2023PE4  
TPS2024D  
ACTIVE  
ACTIVE  
ACTIVE  
PDIP  
PDIP  
SOIC  
P
P
D
8
8
8
50  
50  
75  
Pb-Free (RoHS)  
Pb-Free (RoHS)  
CU NIPDAU N / A for Pkg Type  
CU NIPDAU N / A for Pkg Type  
CU NIPDAU Level-1-260C-UNLIM  
Green (RoHS  
& no Sb/Br)  
TPS2024DG4  
TPS2024DR  
ACTIVE  
ACTIVE  
ACTIVE  
SOIC  
SOIC  
SOIC  
D
D
D
8
8
8
75  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
Purchase Samples  
Request Free Samples  
Request Free Samples  
2500  
2500  
Green (RoHS  
& no Sb/Br)  
TPS2024DRG4  
Green (RoHS  
& no Sb/Br)  
TPS2024P  
ACTIVE  
ACTIVE  
PDIP  
PDIP  
P
P
8
8
50  
50  
Pb-Free (RoHS)  
Pb-Free (RoHS)  
CU NIPDAU N / A for Pkg Type  
CU NIPDAU N / A for Pkg Type  
Purchase Samples  
Purchase Samples  
TPS2024PE4  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE OPTION ADDENDUM  
www.ti.com  
28-Aug-2010  
OTHER QUALIFIED VERSIONS OF TPS2020, TPS2021, TPS2022, TPS2024 :  
Automotive: TPS2020-Q1, TPS2021-Q1, TPS2022-Q1, TPS2024-Q1  
NOTE: Qualified Version Definitions:  
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects  
Addendum-Page 3  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
19-Mar-2008  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0 (mm)  
B0 (mm)  
K0 (mm)  
P1  
W
Pin1  
Diameter Width  
(mm) W1 (mm)  
(mm) (mm) Quadrant  
TPS2020DR  
TPS2021DR  
TPS2022DR  
TPS2023DR  
TPS2024DR  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
D
D
D
D
D
8
8
8
8
8
2500  
2500  
2500  
2500  
2500  
330.0  
330.0  
330.0  
330.0  
330.0  
12.4  
12.4  
12.4  
12.4  
12.4  
6.4  
6.4  
6.4  
6.4  
6.4  
5.2  
5.2  
5.2  
5.2  
5.2  
2.1  
2.1  
2.1  
2.1  
2.1  
8.0  
8.0  
8.0  
8.0  
8.0  
12.0  
12.0  
12.0  
12.0  
12.0  
Q1  
Q1  
Q1  
Q1  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
19-Mar-2008  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TPS2020DR  
TPS2021DR  
TPS2022DR  
TPS2023DR  
TPS2024DR  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
D
D
D
D
D
8
8
8
8
8
2500  
2500  
2500  
2500  
2500  
340.5  
340.5  
340.5  
340.5  
340.5  
338.1  
338.1  
338.1  
338.1  
338.1  
20.6  
20.6  
20.6  
20.6  
20.6  
Pack Materials-Page 2  
IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other  
changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. Buyers should  
obtain the latest relevant information before placing orders and should verify that such information is current and complete. All  
semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time  
of order acknowledgment.  
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms  
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary  
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily  
performed.  
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and  
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide  
adequate design and operating safeguards.  
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or  
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