TPS22914CYFPT [TI]
5.5V、2A、37mΩ 负载开关 | YFP | 4 | -40 to 105;型号: | TPS22914CYFPT |
厂家: | TEXAS INSTRUMENTS |
描述: | 5.5V、2A、37mΩ 负载开关 | YFP | 4 | -40 to 105 开关 驱动 接口集成电路 |
文件: | 总30页 (文件大小:1575K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TPS22914B, TPS22914C, TPS22915B, TPS22915C
ZHCSCL2E –JUNE 2014 –REVISED OCTOBER 2020
TPS2291xx 5.5V、2A、37mΩ 导通电阻负载开关
1 特性
3 说明
• 集成单通道负载开关
• 输入电压范围:1.05 V 至5.5 V
TPS22914/15 是一款小型、低 RON、具有受控压摆率
的单通道负载开关。此器件包括一个 N 沟道金属氧化
物半导体场效应晶体管 (MOSFET),可在 1.05 V 至
5.5 V 的输入电压范围内运行并可支持 2A 的最大持续
电流。此开关由一个开关输入控制,能够直接连接低电
压控制信号。
• 低导通电阻(RON
)
– RON = 37mΩ(VIN = 5V 时的典型值)
– RON = 38mΩ(VIN = 3.3V 时的典型值)
– RON = 43mΩ(VIN = 1.8V 时的典型值)
• 2A 最大持续开关电流
小尺寸和低 RON 使得此器件非常适合于空间受限、电
池供电类应用。此开关的宽输入电压范围使得它成为针
对很多不同电压轨的多用途解决方案。器件的受控上升
时间大大减少了由大容量负载电容导致的涌入电流,从
而减少或消除了电源消耗。通过集成一个在开关关闭时
实现快速输出放电 (QOD) 的 143Ω 下拉电阻器,
TPS22915 进一步减少了总体解决方案尺寸。
• 低静态电流
– 7.7µA(VIN = 3.3 V 时的典型值)
• 低控制输入阈值允许使用1 V 或更高电压的通用输
入输出(GPIO) 接口
• 受控转换率
– VIN = 3.3V 时,tR(TPS22914B/15B) = 64µs
– VIN = 3.3V 时,tR(TPS22914C/15C) = 913µs
• 快速输出放电(只适用于TPS22915)
• 超小型晶圆级芯片尺寸封装
TPS22914/15 采用节省空间的小型 0.78mm ×
0.78mm、0.4mm 间距、0.5mm 高度的 4 引脚晶圆芯
片级 (WCSP) 封装 (YFP)。该器件在自然通风环境下
的额定运行温度范围为–40°C 至+105°C。
– 0.78mm × 0.78mm,0.4mm 间距,
0.5mm 高度(YFP)
• 根据JESD 22 测试得出的静电放电(ESD) 性能
器件信息(1)
封装尺寸(标称值)
器件型号
TPS22914B
封装
– 2kV 人体放电模式(HBM) 和1kV 器件充电模型
(CDM)
TPS22914C
TPS22915B
TPS22915C
2 应用
DSBGA (4)
0.74 mm x 0.74 mm
• 智能手机、手机
• 超薄、超极本™/笔记本电脑
• 平板电脑、平板手机
• 可佩戴技术
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
• 固态硬盘
• 数码照相机
80
VIN
ON
VOUT
GND
-40°C
25°C
85°C
Power Supply
ON
70
60
50
40
30
20
CIN
CL
RL
105°C
OFF
TPS22914/15
GND
简化版原理图
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D005
RON 与VIN 之间的关系(IOUT = -200mA)
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLVSCO0
TPS22914B, TPS22914C, TPS22915B, TPS22915C
ZHCSCL2E –JUNE 2014 –REVISED OCTOBER 2020
www.ti.com.cn
Table of Contents
9.3 Feature Description...................................................16
9.4 Device Functional Modes..........................................17
10 Application and Implementation................................18
10.1 Application Information........................................... 18
10.2 Typical Application.................................................. 18
11 Power Supply Recommendations..............................20
12 Layout...........................................................................20
12.1 Layout Guidelines................................................... 20
12.2 Layout Example...................................................... 21
13 Device and Documentation Support..........................22
13.1 Documentation Support.......................................... 22
13.2 Related Links.......................................................... 22
13.3 接收文档更新通知................................................... 22
13.4 支持资源..................................................................22
13.5 Trademarks.............................................................22
13.6 静电放电警告.......................................................... 22
13.7 术语表..................................................................... 22
14 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings........................................ 4
7.2 ESD Ratings............................................................... 4
7.3 Recommended Operating Conditions.........................4
7.4 Thermal Information....................................................4
7.5 Electrical Characteristics.............................................5
7.6 Switching Characteristics............................................8
7.7 Typical DC Characteristics..........................................9
7.8 Typical AC Characteristics (TPS22914B/15B)..........11
7.9 Typical AC Characteristics (TPS22914C/15C)......... 13
8 Parameter Measurement Information..........................15
9 Detailed Description......................................................16
9.1 Overview...................................................................16
9.2 Functional Block Diagram.........................................16
Information.................................................................... 22
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
Changes from Revision D (September 2016) to Revision E (October 2020)
Page
• 更新了整个文档中的表格、图和交叉参考的编号格式.........................................................................................1
• 更新了器件信息表中的封装尺寸........................................................................................................................ 1
Changes from Revision C (July 2015) to Revision D (September 2016)
Page
• Changed "TPS22915B" only, to "TPS22915B/C only" in the Electrical Characteristics table ............................5
Changes from Revision B (September 2014) to Revision C (July 2015)
Page
• 将数据表中的TA 额定值从85°C 更新为105°C。.............................................................................................. 1
Changes from Revision A (June 2014) to Revision B (September 2014)
Page
• Updated X-axis scales in th Typical Characteristics section. .............................................................................9
Changes from Revision * (June 2014) to Revision A (June 2014)
Page
• 完整版的最初发布版本。.................................................................................................................................... 1
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5 Device Comparison Table
RON at 3.3V
DEVICE
tR at 3.3V
(TYPICAL)
QUICK OUTPUT
DISCHARGE
MAXIMUM OUTPUT
CURRENT
ENABLE
(TYPICAL)
TPS22914B
TPS22914C
TPS22915B
TPS22915C
64 µs
913 µs
64 µs
No
No
2 A
2 A
2 A
2 A
Active High
Active High
Active High
Active High
38 mΩ
38 mΩ
38 mΩ
38 mΩ
Yes
Yes
913 µs
6 Pin Configuration and Functions
B
B
A
A
1
2
2
1
LASER MARKING VIEW
BUMP VIEW
图6-1. YFP PACKAGE 4 PIN DSBGA TOP VIEW
表6-1. Pin Description
B
A
ON
VIN
2
GND
VOUT
1
表6-2. Pin Functions
PIN
NAME
TYPE
DESCRIPTION
NO.
A1
O
Switch output. Place ceramic bypass capacitor(s) between this pin
and GND. See the Detailed Description section for more information
VOUT
VIN
I
Switch input. Place ceramic bypass capacitor(s) between this pin and
GND. See the Detailed Description section for more information
A2
B1
B2
GND
ON
Device ground
—
I
Active high switch control input. Do not leave floating
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7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1) (2)
MIN
–0.3
–0.3
–0.3
MAX
6
UNIT
V
VIN
Input voltage
VOUT
VON
IMAX
IPLS
TJ
Output voltage
V
6
ON voltage
V
6
Maximum continuous switch current
Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle
Maximum junction temperature
Storage temperature
2
A
2.5
125
150
A
°C
°C
TSTG
–65
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) All voltage values are with respect to network ground terminal.
7.2 ESD Ratings
VALUE
±2000
±1000
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Electrostatic
discharge
V(ESD)
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions.
7.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted)
MIN
1.05
MAX
5.5
UNIT
V
VIN
Input voltage
VON
ON voltage
0
5.5
VIN
5.5
0.5
105
V
VOUT
VIH, ON
VIL, ON
TA
Output voltage
V
High-level input voltage, ON
Low-level input voltage, ON
Operating free-air temperature range(1)
Input Capacitor
VIN = 1.05 V to 5.5 V
VIN = 1.05 V to 5.5 V
1
0
V
V
°C
µF
–40
1(2)
CIN
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature
may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature
[TJ(MAX)], the maximum power dissipation of the device in the application [PD(MAX)], and the junction-to-ambient thermal resistance of
the part/package in the application (θJA), as given by the following equation: TA(MAX) = TJ(MAX) –(θJA × PD(MAX)).
(2) Refer to the Detailed Description section.
7.4 Thermal Information
TPS2291x
THERMAL METRIC(1)
YFP (DSBGA)
UNIT
4 PINS
193
2.3
RθJA
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
36
12
ψJT
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7.4 Thermal Information (continued)
TPS2291x
THERMAL METRIC(1)
YFP (DSBGA)
4 PINS
UNIT
Junction-to-board characterization parameter
36
°C/W
ψJB
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Electrical Characteristics
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤TA ≤+105°C. Typical values are for TA = 25°C.
PARAMETER
TEST CONDITION
TA
MIN TYP MAX UNIT
7.7
7.6
7.7
8.4
7.4
6.7
7.7
7.6
7.7
8.4
7.4
6.7
10.8
12.1
9.6
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
VIN = 5.5 V
VIN = 5 V
11.9
9.6
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.05 V
VIN = 5.5 V
VIN = 5 V
12
Quiescent current
(TPS22914B/15B)
VON = 5 V, IOUT = 0 A
µA
11
13.5
10.4
13.9
10.9
11.7
11.5
14.1
11.1
13.7
10.7
13.3
11.7
13.4
11
IQ, VIN
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.05 V
Quiescent current
(TPS22914C/15C)
VON = 5 V, IOUT = 0 A
µA
12.8
10.9
10.9
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7.5 Electrical Characteristics (continued)
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤TA ≤+105°C. Typical values are for TA = 25°C.
PARAMETER
TEST CONDITION
TA
MIN TYP MAX UNIT
0.5
0.5
0.5
0.5
0.4
0.4
2
3
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
–40°C to +85°C
–40°C to +105°C
VIN = 5.5 V
2
VIN = 5.0 V
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.05 V
3
2
3
ISD, VIN
Shutdown current
VON = 0 V, VOUT = 0 V
µA
2
3
2
3
2
3
ION
ON pin input leakage
current
VIN = 5.5 V, IOUT = 0 A
0.1
µA
–40°C to +105°C
25°C
37
37
37
38
38
43
52
63
40
51
57
41
51
57
41
52
58
41
52
59
42
53
58
48
59
66
61
73
85
96
102
107
–40°C to +85°C
–40°C to +105°C
25°C
VIN = 5.5 V, IOUT = –200 mA
VIN = 5 V, IOUT = –200 mA
VIN = 4.2 V, IOUT = –200 mA
VIN = 3.3 V, IOUT = –200 mA
VIN = 2.5 V, IOUT = –200 mA
VIN = 1.8 V, IOUT = –200 mA
VIN = 1.2 V, IOUT = –200 mA
VIN = 1.05 V, IOUT = –200 mA
mΩ
–40°C to +85°C
–40°C to +105°C
25°C
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
–40°C to +85°C
–40°C to +105°C
25°C
–40°C to +85°C
–40°C to +105°C
25°C
RON
On-resistance
–40°C to +85°C
–40°C to +105°C
25°C
–40°C to +85°C
–40°C to +105°C
25°C
–40°C to +85°C
–40°C to +105°C
25°C
–40°C to +85°C
–40°C to +105°C
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7.5 Electrical Characteristics (continued)
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤TA ≤+105°C. Typical values are for TA = 25°C.
PARAMETER
TEST CONDITION
TA
MIN TYP MAX UNIT
VIN = 5.5 V
VIN = 5 V
102
100
98
VIN = 3.3 V
VIN = 2.5 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.05 V
VHYS
ON pin hysteresis
25°C
96
96
mV
94
92
(1)
RPD
Output pull down resistor
VIN = VOUT = 3.3 V, VON = 0 V
143
200
–40°C to +105°C
Ω
(1) TPS22915B/C only.
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7.6 Switching Characteristics
Refer to the timing test circuit in 图8-1 (unless otherwise noted) for references to external components used for the test
condition in the switching characteristics table. Switching characteristics shown below are only valid for the power-up
sequence where VIN is already in steady state condition before the ON pin is asserted high.
TYP
TYP
PARAMETER
TEST CONDITION
UNIT
(TPS22914B/15B) (TPS22914C/15C)
VIN = 5 V, VON = 5 V, TA = 25°C (unless otherwise noted)
tON
tOFF
tR
Turnon time
Turnoff time
VOUT rise time
VOUT fall time
Delay time
104
2
1300
2
µs
µs
µs
µs
µs
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
89
2
1277
2
tF
tD
59
663
VIN = 3.3 V, VON = 5 V, TA = 25°C (unless otherwise noted)
tON
tOFF
tR
Turnon time
Turnoff time
VOUT rise time
VOUT fall time
Delay time
83
2
1077
2
µs
µs
µs
µs
µs
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
64
2
913
2
tF
tD
52
622
VIN = 1.05 V, VON = 5 V, TA = 25°C (unless otherwise noted)
tON
tOFF
tR
Turnon time
Turnoff time
VOUT rise time
VOUT fall time
Delay time
61
3
752
3
µs
µs
µs
µs
µs
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
28
2
409
2
tF
tD
47
547
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7.7 Typical DC Characteristics
11
10
9
11
10
9
8
8
7
7
6
6
5
5
-40°C
25°C
85°C
105°C
-40°C
25°C
85°C
105°C
4
4
3
3
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D001
D002
VON = 5 V
IOUT = 0 A
VON = 5 V
IOUT = 0 A
图7-1. IQ vs VIN (TPS22914B/15B)
图7-2. IQ vs VIN (TPS22914C/15C)
2.8
2.4
2
80
70
60
50
40
30
20
10
0
-40°C
25°C
85°C
105°C
1.6
1.2
0.8
0.4
0
VIN = 1.05V
VIN = 1.2V
VIN = 1.5V
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
VIN = 4.2V
VIN = 5V
VIN = 5.5V
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
-40 -25 -10
5
20 35 50 65 80 95 110 125
Junction Temperature (èC)
D003
D004
VON = 0 V
IOUT = 0 A
VON = 5 V
IOUT = –200 mA
图7-3. ISD vs VIN
图7-4. RON vs TJ
80
70
60
50
40
30
20
80
70
60
50
40
30
20
10
0
-40°C
25°C
85°C
105°C
VIN = 1.05V
VIN = 1.2V
VIN = 1.5V
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
VIN = 4.2V
VIN = 5V
VIN = 5.5V
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
0
0.5
1
IOUT (A)
1.5
2
D005
D006
VON = 5 V
VON = 5 V
TA = 25°C
IOUT = –200 mA
图7-6. RON vs IOUT
图7-5. RON vs VIN
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1
1
0.95
0.9
-40°C
0.95
25°C
85°C
105°C
0.9
0.85
0.8
0.85
0.8
0.75
0.7
0.75
0.7
0.65
0.6
0.65
0.6
-40°C
25°C
85°C
0.55
0.5
0.55
0.5
105°C
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D007
D008
IOUT = 0 A
IOUT = 0 A
图7-7. VIL vs VIN
图7-8. VIH vs VIN
170
160
150
140
130
120
110
100
90
190
185
180
175
170
165
160
155
150
145
140
-40°C
25°C
85°C
-40°C
25°C
85°C
105°C
105°C
80
70
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D009
D010
IOUT = 0 A
VIN = VOUT
VON = 0 V
图7-9. VHYS vs VIN
图7-10. RPD vs VIN
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7.8 Typical AC Characteristics (TPS22914B/15B)
100
90
80
70
60
50
70
65
60
55
50
45
40
35
40
-40°C
25°C
85°C
105°C
-40°C
25°C
85°C
105°C
30
20
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D011
D012
CIN = 1 µF
CL = 0.1 µF
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
RL = 10 Ω
图7-11. tR vs VIN
图7-12. tD vs VIN
5
4.5
4
5
4.5
4
3.5
3
3.5
3
2.5
2
2.5
2
1.5
1
1.5
1
-40°C
25°C
85°C
105°C
-40°C
25°C
85°C
105°C
0.5
0
0.5
0
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D013
D014
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
图7-13. tF vs VIN
图7-14. tOFF vs VIN
120
110
100
90
80
70
-40°C
25°C
85°C
105°C
60
50
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D015
VIN = 5 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
图7-15. tON vs VIN
图7-16. tR at VIN = 5 V
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VIN = 5 V
CIN = 1 µF
CL = 0.1 µF
VIN = 3.3 V
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
RL = 10 Ω
图7-17. tF at VIN = 5 V
图7-18. tR at VIN = 3.3 V
VIN = 3.3 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
VIN = 1.05 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
图7-19. tF at VIN = 3.3V
图7-20. tR at VIN = 1.05V
VIN = 1.05 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
图7-21. tF at VIN = 1.05 V
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7.9 Typical AC Characteristics (TPS22914C/15C)
1500
1300
1100
900
750
700
650
600
550
500
450
700
-40°C
-40°C
25°C
85°C
105°C
25°C
85°C
105°C
500
300
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D016
D017
CIN = 1 µF
CL = 0.1 µF
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
RL = 10 Ω
图7-22. tR vs VIN
图7-23. tD vs VIN
5
4.5
4
5
4.5
4
3.5
3
3.5
3
2.5
2
2.5
2
1.5
1
1.5
1
-40°C
25°C
85°C
105°C
-40°C
25°C
85°C
105°C
0.5
0
0.5
0
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D018
D019
CIN = 1 µF
CL = 0.1 µF
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
RL = 10 Ω
图7-24. tF vs VIN
图7-25. tOFF vs VIN
1600
1400
1200
1000
800
-40°C
25°C
85°C
105°C
600
1.05 1.55 2.05 2.55 3.05 3.55 4.05 4.55 5.05 5.5
VIN (V)
D020
VIN = 5 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
图7-26. tON vs VIN
图7-27. tR at VIN = 5 V
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VIN = 5 V
CIN = 1 µF
CL = 0.1 µF
VIN = 3.3 V
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
RL = 10 Ω
图7-28. tF at VIN = 5 V
图7-29. tR at VIN = 3.3 V
VIN = 3.3 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
VIN = 1.05 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
图7-30. tF at VIN = 3.3 V
图7-31. tR at VIN = 1.05 V
VIN = 1.05 V
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
图7-32. tF at VIN = 1.05 V
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8 Parameter Measurement Information
VIN
VOUT
CIN = 1 µF
CL
+
-
RL
ON
ON
(A)
GND
TPS22914/15
OFF
GND
GND
A. Rise and fall times of the control signal is 100ns
图8-1. Test Circuit
VON
50%
50%
tF
tOFF
tR
tON
90%
90%
VOUT
VOUT
50%
10%
50%
10%
10%
tD
图8-2. Timing Waveforms
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9 Detailed Description
9.1 Overview
The device is a 5.5-V, 2-A load switch in a 4-pin YFP package. To reduce voltage drop for low voltage and high
current rails, the device implements an ultra-low resistance N-channel MOSFET which reduces the drop out
voltage through the device.
The device has a controlled and fixed slew rate which helps reduce or eliminate power supply droop due to large
inrush currents. During shutdown, the device has very low leakage currents, thereby reducing unnecessary
leakages for downstream modules during standby. Integrated control logic, driver, charge pump, and output
discharge FET eliminates the need for any external components, which reduces solution size and bill of
materials (BOM) count.
9.2 Functional Block Diagram
9.3 Feature Description
9.3.1 On and Off Control
The ON pins control the state of the switch. Asserting ON high enables the switch. ON is active high and has a
low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard
GPIO logic threshold. It can be used with any microcontroller with 1 V or higher GPIO voltage. This pin cannot
be left floating and must be driven either high or low for proper functionality.
9.3.2 Input Capacitor (CIN)
To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a
discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-µF
ceramic capacitor, CIN, placed close to the pins, is usually sufficient. Higher values of CIN can be used to further
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reduce the voltage drop during high-current application. When switching heavy loads, it is recommended to have
an input capacitor about 10 times higher than the output capacitor to avoid excessive voltage drop.
9.3.3 Output Capacitor (CL)
Due to the integrated body diode in the MOSFET, a CIN greater than CL is highly recommended. A CL greater
than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow
through the body diode from VOUT to VIN. A CIN to CL ratio of 10 to 1 is recommended for minimizing VIN dip
caused by inrush currents during startup.
9.4 Device Functional Modes
表9-1 describes the connection of the VOUT pin depending on the state of the ON pin.
表9-1. VOUT Connection
ON
L
TPS22914
Open
TPS22915
GND
H
VIN
VIN
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10 Application and Implementation
Note
以下应用部分的信息不属于TI 组件规范,TI 不担保其准确性和完整性。客户应负责确定 TI 组件是否适
用于其应用。客户应验证并测试其设计,以确保系统功能。
10.1 Application Information
This section highlights some of the design considerations when implementing this device in various applications.
A PSPICE model for this device is also available in the product page of this device.
10.2 Typical Application
This typical application demonstrates how the TPS22914 and TPS22915 can be used to power downstream
modules.
VIN
VOUT
VIN
VOUT
CL
CIN
GND
ON
ON
TPS22914/15
图10-1. Typical Application Schematic
10.2.1 Design Requirements
For this design example, use the input parameters shown in 表10-1.
表10-1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
VIN
5 V
2 A
Load current
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10.2.2 Detailed Design Procedure
To begin the design process, the designer needs to know the following:
• VIN voltage
• Load Current
10.2.2.1 VIN to VOUT Voltage Drop
The VIN to VOUT voltage drop in the device is determined by the RON of the device and the load current. The
RON of the device depends upon the VIN conditions of the device. Refer to the RON specification of the device in
the Electrical Characteristics table of this datasheet. Once the RON of the device is determined based upon the
VIN conditions, use 方程式1 to calculate the VIN to VOUT voltage drop.
∆V = ILOAD × RON
(1)
where
• ΔV = voltage drop from VIN to VOUT
• ILOAD = load current
• RON = On-resistance of the device for a specific VIN
An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated.
10.2.2.2 Inrush Current
To determine how much inrush current is caused by the CL capacitor, use 方程式2.
dVOUT
I
= CL ´
INRUSH
dt
(2)
where
• IINRUSH = amount of inrush caused by CL
• CL = capacitance on VOUT
• dt = rise time in VOUT during the ramp up of VOUT when the device is enabled
• dVOUT = change in VOUT during the ramp up of VOUT when the device is enabled
An appropriate CL value must be placed on VOUT such that the IMAX and IPLS specifications of the device are
not violated.
10.2.3 Application Curves
VIN = 5 V
CL = 47 µF
VIN = 5 V
CL = 47 µF
图10-2. TPS22914B/15B Inrush Current
图10-3. TPS22914C/15C Inrush Current
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11 Power Supply Recommendations
The device is designed to operate from a VIN range of 1.05 V to 5.5 V. This supply must be well regulated and
placed as close to the device terminal as possible with the recommended 1-µF bypass capacitor. If the supply is
located more than a few inches from the device terminals, additional bulk capacitance may be required in
addition to the ceramic bypass capacitors. If additional bulk capacitance is required, an electrolytic, tantalum, or
ceramic capacitor of 1 µF may be sufficient.
12 Layout
12.1 Layout Guidelines
1. VIN and VOUT traces must be as short and wide as possible to accommodate for high current.
2. The VIN pin must be bypassed to ground with low ESR ceramic bypass capacitors. The typical
recommended bypass capacitance is 1-μF ceramic with X5R or X7R dielectric. This capacitor must be
placed as close to the device pins as possible.
3. The VOUT pin must be bypassed to ground with low ESR ceramic bypass capacitors. The typical
recommended bypass capacitance is one-tenth of the VIN bypass capacitor of X5R or X7R dielectric rating.
This capacitor must be placed as close to the device pins as possible.
12.1.1 Thermal Considerations
For best performance, all traces must be as short as possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal and short-circuit operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic
electrical effects along with minimizing the case to ambient thermal impedance.
The maximum IC junction temperature must be restricted to 125°C under normal operating conditions. To
calculate the maximum allowable dissipation, PD(max) for a given output current and ambient temperature, use 方
程式3.
TJ(MAX) - TA
PD(MAX)
=
qJA
(3)
where
• PD(MAX) = maximum allowable power dissipation
• TJ(MAX) = maximum allowable junction temperature (125°C for the TPS22914/15)
• TA = ambient temperature of the device
• θJA = junction to air thermal impedance. Refer to the Thermal Information table. This parameter is highly
dependent upon board layout.
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12.2 Layout Example
To GPIO control
ON
GND
VOUTBypass
VOUT
Capacitor
VIN
V Bypass
IN
Capacitor
VIA to Power Ground Plane
图12-1. Recommended Board Layout
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13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
For related documentation see the following:
• Basics of Load Switches
• Managing Inrush Current
• Load Switch Thermal Considerations
• Using the TPS22915BEVM-078 Single Channel Load Switch IC
• Implementing Ship Mode Using the TPS22915B Load Switches
13.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
表13-1. Related Links
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TPS22914B
TPS22914C
TPS22915B
TPS22915C
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
13.3 接收文档更新通知
要接收文档更新通知,请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册,即可每周接收产品信息更
改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
13.4 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
13.5 Trademarks
超极本™ is a trademark of Intel.
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
13.6 静电放电警告
静电放电(ESD) 会损坏这个集成电路。德州仪器(TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理
和安装程序,可能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级,大至整个器件故障。精密的集成电路可能更容易受到损坏,这是因为非常细微的参
数更改都可能会导致器件与其发布的规格不相符。
13.7 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS22914BYFPR
TPS22914BYFPT
TPS22914CYFPR
TPS22914CYFPT
TPS22915BYFPR
TPS22915BYFPT
TPS22915CYFPR
TPS22915CYFPT
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
4
4
4
4
4
4
4
4
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
SNAGCU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 105
-40 to 105
-40 to 105
-40 to 105
-40 to 105
-40 to 105
-40 to 105
-40 to 105
S3
S3
S6
S6
S4
S4
S7
S7
SNAGCU
SNAGCU
SNAGCU
3000 RoHS & Green SAC396 | SNAGCU
250 RoHS & Green SAC396 | SNAGCU
3000 RoHS & Green
250 RoHS & Green
SNAGCU
SNAGCU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
6-May-2023
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TPS22914BYFPR
TPS22914BYFPT
TPS22914BYFPT
TPS22914CYFPR
TPS22914CYFPT
TPS22915BYFPR
TPS22915BYFPR
TPS22915BYFPT
TPS22915BYFPT
TPS22915CYFPR
TPS22915CYFPT
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
4
4
4
4
4
4
4
4
4
4
4
3000
250
180.0
180.0
178.0
180.0
180.0
180.0
178.0
180.0
178.0
180.0
180.0
8.4
8.4
9.2
8.4
8.4
8.4
9.2
8.4
9.2
8.4
8.4
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.64
0.64
0.59
0.64
0.64
0.64
0.59
0.64
0.59
0.64
0.64
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
250
3000
250
3000
3000
250
250
3000
250
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
6-May-2023
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TPS22914BYFPR
TPS22914BYFPT
TPS22914BYFPT
TPS22914CYFPR
TPS22914CYFPT
TPS22915BYFPR
TPS22915BYFPR
TPS22915BYFPT
TPS22915BYFPT
TPS22915CYFPR
TPS22915CYFPT
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
DSBGA
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
YFP
4
4
4
4
4
4
4
4
4
4
4
3000
250
182.0
182.0
220.0
182.0
182.0
182.0
220.0
182.0
220.0
182.0
182.0
182.0
182.0
220.0
182.0
182.0
182.0
220.0
182.0
220.0
182.0
182.0
20.0
20.0
35.0
20.0
20.0
20.0
35.0
20.0
35.0
20.0
20.0
250
3000
250
3000
3000
250
250
3000
250
Pack Materials-Page 2
PACKAGE OUTLINE
YFP0004
DSBGA - 0.5 mm max height
S
C
A
L
E
1
0
.
0
0
0
DIE SIZE BALL GRID ARRAY
B
E
A
D
BALL A1
CORNER
C
0.5 MAX
SEATING PLANE
0.05 C
0.19
0.13
BALL TYP
0.4
TYP
B
A
D: Max = 0.778 mm, Min =0.718 mm
E: Max = 0.778 mm, Min =0.718 mm
SYMM
0.4
TYP
0.25
0.21
C A B
4X
0.015
1
2
SYMM
4223507/A 01/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
www.ti.com
EXAMPLE BOARD LAYOUT
YFP0004
DSBGA - 0.5 mm max height
DIE SIZE BALL GRID ARRAY
(0.4) TYP
4X ( 0.23)
1
2
A
B
SYMM
(0.4) TYP
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:50X
0.05 MAX
0.05 MIN
METAL UNDER
SOLDER MASK
(
0.23)
METAL
EXPOSED
(
0.23)
EXPOSED
METAL
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL
NON-SOLDER MASK
SOLDER MASK
DEFINED
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
NOT TO SCALE
4223507/A 01/2017
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).
www.ti.com
EXAMPLE STENCIL DESIGN
YFP0004
DSBGA - 0.5 mm max height
DIE SIZE BALL GRID ARRAY
(0.4) TYP
(R0.05) TYP
4X ( 0.25)
1
2
A
B
SYMM
(0.4) TYP
METAL
TYP
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:50X
4223507/A 01/2017
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
www.ti.com
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