TPS22995RZGR [TI]
具有可调上升时间的 5.5V、3.5A、20mΩ 导通电阻负载开关 | RZG | 6 | -40 to 125;
| 型号： | TPS22995RZGR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有可调上升时间的 5.5V、3.5A、20mΩ 导通电阻负载开关 | RZG | 6 | -40 to 125 开关 |
| 文件： | 总28页 (文件大小：1371K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPS22995
ZHCSQ16 –DECEMBER 2022
TPS22995 具有可调上升时间的5.5V、3.8A、18mΩ 导通电阻负载开关
1 特性
3 说明
• 输入电压范围(VIN)：0.4 V 至5.5V
• 偏置电压(VBIAS): 1.5 V 至5.5 V
• 最大持续电流：3.8A
• 导通电阻(RON)18mΩ（典型值）
• 通过外部电容器实现可调压摆率控制
• 快速输出放电(QOD)：100Ω（典型值）
• 热关断
• ON 引脚智能下拉电阻(RPD,ON)：
• – ON ≥VIH (ION)：25nA（最大值）
– ON ≤VIL（RPD，ON）：500kΩ（典型值）
• 低功耗：
TPS22995 是一款单通道负载开关，具有可配置上升时
间，从而可更大限度地降低浪涌电流。此器件包含一个
可在 0.4 V 至 5.5V 输入电压范围内运行的 N 沟道
MOSFET，并且支持3.8 A 的最大持续电流。
开关由可与低压控制信号直接连接的打开和关闭输入
(ON) 控制。此外，TPS22995 在开关关闭时具有快速
输出放电功能，可将输出电压拉低至已知0V 状态。
TPS22995 采用两种不同的 6 引脚 WQFN 封装，具有
0.4mm 和0.5mm 两种选项。该器件在自然通风环境下
的额定运行温度范围为–40°C 至+125°C。
– 导通状态(IQ)：10uA（典型值）
– 关闭状态(ISD)：0.1uA（典型值）
封装信息
封装(1)
封装尺寸（标称值）
1.25mm × 0.85mm
1.50mm × 0.75mm
器件型号
TPS22995
RZF（WQFN，6）
RZG（WQFN，6）
2 应用
• 笔记本电脑
• 平板电脑
• 工业PC
• 离散工业解决方案
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
TPS22995
VIN
VOUT
VOUT
VIN
Power Supply
Load
Charge
VBIAS
Pump
Cin
VBIAS
ON
CT
Thermal
Shutdown
CT
CT
ON
GND
OFF
ON
Control Logic
Driver
典型应用图
RQOD
Smart
Pull
Down
GND
TPS22995 方框图
本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问
www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SLVSGT1
TPS22995
ZHCSQ16 –DECEMBER 2022
www.ti.com.cn
Table of Contents
8 Detailed Description......................................................13
8.1 Overview...................................................................13
8.2 Functional Block Diagram.........................................13
8.3 Feature Description...................................................14
8.4 Device Functional Modes..........................................15
9 Application and Implementation..................................16
9.1 Application Information............................................. 16
9.2 Typical Application.................................................... 16
9.3 Power Supply Recommendations.............................17
9.4 Layout....................................................................... 18
10 Device and Documentation Support..........................19
10.1 接收文档更新通知................................................... 19
10.2 支持资源..................................................................19
10.3 Trademarks.............................................................19
10.4 Electrostatic Discharge Caution..............................19
10.5 术语表..................................................................... 19
11 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics (VBIAS = 5 V)..................... 5
6.6 Electrical Characteristics (VBIAS = 3.3 V).................. 5
6.7 Electrical Characteristics (VBIAS = 1.5 V).................. 6
6.8 Switching Characteristics (VBIAS = 5 V).................... 7
6.9 Switching Characteristics (VBIAS = 3.3 V)................. 8
6.10 Switching Characteristics (VBIAS = 1.5 V)............... 8
6.11 Typical Characteristics............................................ 10
7 Parameter Measurement Information..........................12
Information.................................................................... 19
4 Revision History
注：以前版本的页码可能与当前版本的页码不同
DATE
REVISION
NOTES
December 2022
*
Initial Release
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5 Pin Configuration and Functions
VBIAS
CT
CT
VBIAS
VIN
VIN
VOUT
GND
VOUT
GND
ON
ON
图5-1. TPS22995 RZF, RZG 6-Pin WQFN Package (Top View Left, Bottom View Right)
表5-1. Pin Functions
PIN
TYPE(1)
DESCRIPTION
NAME
NO.
VBIAS
VIN
1
P
P
I
Bias voltage
Supply input
Enable pin
2
3
4
5
6
ON
GND
VOUT
CT
G
P
I
Ground
Output voltage
Timing pin, can control the slew rate of the output through a capacitor to GND
(1) I = Input, O = Output, I/O = Input or Output, G = Ground, P = Power.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
MAX
6
UNIT
VIN
Input Voltage
Bias Voltage
V
V
V
V
A
VBIAS
6
VON, VPG, VQOD Control Pin Voltage
6
VCT
CT Pin Voltage
15
3.8
IMAX
Maximum Current
Internally
Limited
TJ
Junction temperature
Storage temperature
°C
°C
Tstg
150
–65
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per ANSI/ESDA/
JEDEC JS-002(2)
±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
0.4
1.5
0.8
0
NOM
MAX
5.5
UNIT
V
VIN
VBIAS
VIH
VIL
Input Voltage
Bias Voltage
5.5
V
ON Pin High Voltage Range
ON Pin Low Voltage Range
Ambient Temperature
5.5
V
0.35
125
V
TA
-40
°C
6.4 Thermal Information
TPS22995
6 PINS
THERMAL METRIC(1)
UNIT
RZF(WQFN-HR)
RZG(WQFN-HR)
RθJA
RθJC(top)
RθJB
ΨJT
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
143.5
132.1
47.8
5.2
141.6
133.7
41.2
5.3
°C/W
°C/W
°C/W
°C/W
°C/W
Junction-to-top characterization parameter
Junction-to-board characterization parameter
YJB
47.4
40.8
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics (VBIAS = 5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Power Consumption
25 °C
0.1
uA
ISD,VBIA
0.5
1
uA
uA
uA
uA
uA
uA
uA
uA
uA
VBIAS Shutdown Current
ON = 0V
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
S
10
20
20
IQ,VBIAS VBIAS Quiescent Current
ISD,VIN VIN Shutdown Current
ON > VIH
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
0.1
1
2
ON = 0V
—40 °C to 85 °C
—40 °C to 125 °C
—40 °C to 125 °C
ION
ON pin leakage
ON = VBIAS
0.1
18
Performance
25 °C
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
kΩ
VIN = 5V, IOUT=-200mA
VIN = 3.3V, IOUT=-200mA
VIN = 1.8V, IOUT=-200mA
VIN = 1.2V, IOUT=-200mA
24
27
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
17
17
17
17
23
25
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
RON
On-Resistance
23
25
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
23
25
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
VIN = 0.8V, IOUT=-200mA
ON < VIL
23
25
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
500
100
RPD,ON Smart Pull Down Resistance
1000
150
—40 °C to 125 °C
25 °C
kΩ
Ω
RQOD
QOD Resistance
—40 °C to 125 °C
Ω
Protection
TSD
Thermal Shutdown
-
-
150
170
20
190
°C
°C
TSDHYS Thermal Shutdown Hysteresis
6.6 Electrical Characteristics (VBIAS = 3.3 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Power Consumption
25 °C
0.1
uA
ISD,VBIA
0.5
1
uA
uA
VBIAS Shutdown Current
ON = 0V
—40 °C to 85 °C
—40 °C to 125 °C
S
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6.6 Electrical Characteristics (VBIAS = 3.3 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
25 °C
10
uA
20
20
uA
uA
uA
uA
uA
uA
IQ,VBIAS VBIAS Quiescent Current
ON > VIH
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
0.1
1
2
ISD,VIN VIN Shutdown Current
ON = 0V
—40 °C to 85 °C
—40 °C to 125 °C
—40 °C to 125 °C
ION
ON pin leakage
ON = VBIAS
0.1
18
Performance
25 °C
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
kΩ
VIN = 3.3V, , IOUT=-200mA
VIN = 1.8V, , IOUT=-200mA
VIN = 1.2V, IOUT=-200mA
24
27
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
17
17
17
23
25
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
RON
On-Resistance
23
25
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
VIN = 0.8V, IOUT=-200mA
ON < VIL
23
25
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
500
100
RPD,ON Smart Pull Down Resistance
1000
150
—40 °C to 125 °C
25 °C
kΩ
Ω
RQOD
QOD Resistance
—40 °C to 125 °C
Ω
Protection
TSD
Thermal Shutdown
-
-
150
170
20
190
°C
°C
TSDHYS Thermal Shutdown Hysteresis
6.7 Electrical Characteristics (VBIAS = 1.5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Power Consumption
25 °C
0.1
uA
ISD,VBIA
0.5
1
uA
uA
uA
uA
uA
uA
uA
uA
uA
VBIAS Shutdown Current
ON = 0V
–40 °C to 85 °C
–40 °C to 125 °C
25 °C
S
10
0.1
0.1
20
20
IQ,VBIAS VBIAS Quiescent Current
ISD,VIN VIN Shutdown Current
ON > VIH
–40 °C to 85 °C
–40 °C to 125 °C
25 °C
1
2
ON = 0V
–40 °C to 85 °C
–40 °C to 125 °C
–40 °C to 125 °C
ION
ON pin leakage
ON = VBIAS
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6.7 Electrical Characteristics (VBIAS = 1.5 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Performance
25 °C
20
mΩ
VIN = 1.5V, IOUT=-200mA
33
37
–40 °C to 85 °C
–40 °C to 125 °C
25 °C
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
kΩ
kΩ
Ω
20
20
RON
On-Resistance
VIN = 1.2V, IOUT=-200mA
31
34
–40 °C to 85 °C
–40 °C to 125 °C
25 °C
VIN = 0.8V, IOUT=-200mA
ON < VIL
31
34
–40 °C to 85 °C
–40 °C to 125 °C
25 °C
500
110
RPD,ON Smart Pull Down Resistance
1000
150
–40 °C to 125 °C
25 °C
RQOD
Protection
TSD Thermal Shutdown
QOD Resistance
–40 °C to 125 °C
Ω
Rising
-
-
150
170
20
190
°C
°C
Hysteresis
6.8 Switching Characteristics (VBIAS = 5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 5V
tON
Turn ON time
2810
2020
791
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Rise time
Delay time
Fall time
tFALL
tOFF
1110
62.7
Turn OFF time
VIN = 3.3V
tON
Turn ON time
Rise time
1580
1350
561
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
tFALL
tOFF
1100
63
Turn OFF time
VIN = 1.8V
tON
Turn ON time
Rise time
1110
754
523
1100
63
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
tFALL
tOFF
Turn OFF time
VIN = 1.2V
tON
Turn ON time
Rise time
928
516
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
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6.8 Switching Characteristics (VBIAS = 5 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
508
1100
63
MAX
UNIT
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tFALL
tOFF
VIN = 0.8V
tON
Fall time
us
Turn OFF time
us
Turn ON time
Rise time
796
360
499
1100
63
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
tFALL
tOFF
Turn OFF time
6.9 Switching Characteristics (VBIAS = 3.3 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 3.3V
tON
Turn ON time
2110
1370
741
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Rise time
Delay time
Fall time
tFALL
tOFF
1110
61.8
Turn OFF time
VIN = 1.8V
tON
Turn ON time
Rise time
1170
625
543
1100
63
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
tFALL
tOFF
Turn OFF time
VIN = 1.2V
tON
Turn ON time
Rise time
971
443
528
1100
63
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
tFALL
tOFF
Turn OFF time
VIN = 0.8V
tON
Turn ON time
Rise time
832
315
516
1100
63
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
tFALL
tOFF
Turn OFF time
6.10 Switching Characteristics (VBIAS = 1.5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 1.5V
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6.10 Switching Characteristics (VBIAS = 1.5 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
1350
653
MAX
UNIT
us
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Rise time
us
Delay time
Fall time
693
us
tFALL
tOFF
VIN = 1.2V
tON
1190
63.6
us
Turn OFF time
us
Turn ON time
Rise time
1020
457
567
1100
60
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
tFALL
tOFF
VIN = 0.8V
tON
Turn OFF time
Turn ON time
Rise time
885
331
553
1100
60
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
tFALL
tOFF
Turn OFF time
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6.11 Typical Characteristics
28
26
24
22
20
18
16
14
116
114
112
110
108
106
104
102
100
98
–40 C
25 C
—40 C
25 C
85 C
85 C
125 C
125 C
1.5
2
2.5
3
3.5
4
4.5
5
5.5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Bias Voltage (V)
Bias Voltage (V)
VIN = VBIAS
图6-2. QOD Resistance vs Bias Voltage
VIN = VBIAS
图6-1. On-Resistance vs Bias Voltage
12.5
12
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
–40 C
—40 C
25 C
25 C
85 C
125 C
125 C
11.5
11
10.5
10
9.5
9
8.5
8
7.5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Bias Voltage (V)
Bias Voltage (V)
VIN = VBIAS
VIN = VBIAS
图6-4. VBIAS Shutdown Current vs Bias Voltage
110
图6-3. Quiescent Current vs Bias Voltage
100
–40 C
25 C
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
108
106
104
102
100
98
96
94
92
90
–40 C
25 C
85 C
85 C
125 C
125 C
88
86
84
82
80
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Input Voltage (V)
Input Voltage (V)
VBIAS = 5 V
CT = Open
CL = 10 µF
VBIAS = 5 V
CT = Open
CL = 10 µF
图6-5. Rise Time vs Input Voltage
图6-6. Delay Time vs Input Voltage
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6.11 Typical Characteristics (continued)
200
90
87
84
81
78
75
72
69
66
63
60
57
54
51
48
–40 C
–40 C
25 C
125 C
190
180
170
160
150
140
130
120
110
25 C
85 C
125 C
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Input Volage (V)
Input Voltage (V)
VBIAS = 5 V
CT = Open
CL = 10 µF
VBIAS = 5 V
CT = Open
CL = 10 µF
图6-7. Turn-On Time vs Input Voltage
图6-8. Off Time vs Input Voltage
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
1220
1200
1180
1160
1140
1120
1100
VIN = 5 V
–40 C
25 C
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 0.8 V
125 C
0
500 1000 1500 2000 2500 3000 3500 4000 4500 5000
CT Capacitor (pF)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Input Volage (V)
VBIAS = 5 V
CL = 10 µF
VBIAS = 5 V
CT = Open
CL = 10 µF
图6-10. Rise Time vs CT Capacitor
图6-9. Fall Time vs Input Voltage
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7 Parameter Measurement Information
VIL
VIH
VON
tON
tOFF
tRISE
tFALL
90%
90%
VOUT
tDELAY
10%
10%
图7-1. TPS22995 Timing Parameters
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8 Detailed Description
8.1 Overview
The TPS22995 is a 5.5-V, 3.8-A load switch in a 6-pin WQFN package with 0.4-mm and 0.5-mm pin pitch
options. To reduce voltage drop for low voltage and high-current rails, the device implements a low-resistance,
18-mΩ, N-channel MOSFET, which reduces the dropout voltage through the device. The device has a
configurable slew rate, which helps reduce or eliminate power supply droop because of large inrush currents.
The slew rate can be configured by connecting a capacitor to ground to the CT pin. The TPS22995 also
integrates a Quick Output Discharge circuit that is activated when the switch is turned off, pulling the output
voltage down to a known 0-V state. TPS22995 increases circuit robustness by integrating thermal shutdown that
protects the device in high-temperature conditions.
8.2 Functional Block Diagram
VOUT
VIN
Charge
Pump
VBIAS
Thermal
Shutdown
CT
ON
Control Logic
Driver
RQOD
Smart
Pull
Down
GND
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8.3 Feature Description
8.3.1 Adjustable Slew Rate
A capacitor to GND on the CT pin sets the slew rate, and the higher the Capacitor the higher the slew rate. Rise
times are shown below.
表8-1. Rise Time vs CT vs VIN
CT Capacitor
0 pF
VIN = 5.5 V
96.2 µs
VIN = 3.3 V
VIN = 1.8 V
47.8 µs
201 µs
VIN = 1.2 V
36.6 µs
140 µs
VIN = 0.8 V
28.2 us
100 us
72.2 µs
220 pF
517 µs
350 µs
1000 pF
4700 pF
2020 µs
9230 µs
1350 µs
6190 µs
754 µs
516 µs
360 us
3470 µs
2380 µs
1660 us
The following equation can be used to estimate the rise time for different VIN and CT capacitors:
tR = (0.3418VIN + 0.1036) × CT + 14.064VIN + 12.255
(1)
where
• tR = Rise time in µs.
• VIN = Input voltage in V.
• CT = CT Capacitor in pF.
8.3.2 Quick Output Discharge
TPS22995 integrates Quick Output Discharge. When the switch is disabled, a discharge resistor is connected
between VOUT and GND. This resistor has a typical value of 100 Ω and prevents the output from floating while
the switch is disabled
8.3.3 ON and OFF Control
The ON pin controls the state of the switch. The ON pin is compatible with standard GPIO logic threshold so it
can be used in a wide variety of applications. When power is first applied to VIN, a Smart Pulldown is used to
keep the ON pin from floating until the system sequencing is complete. After the ON pin is deliberately driven
high (≥VIH), the Smart Pulldown is disconnected to prevent unnecessary power loss. See the below table when
the ON Pin Smart Pulldown is active.
表8-2. On Pin Control
ON Pin Voltage
≤VIL
ON Pin Function
Pulldown active
No pulldown
≥VIH
8.3.4 Thermal Shutdown
When the device temperature reaches 170°C (typical), the device shuts itself off to prevent thermal damage.
After the device cools off by about 20°C, it turns back on. If the device is kept in a thermally stressful
environment, then the device oscillates between these two states until it can keep its temperature below the
thermal shutdown point.
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8.4 Device Functional Modes
表8-3. Device Functional Modes
ON
L
Fault Condition
VOUT State
Hi-Z
N/A
None
H
VIN through RON
Hi-Z
X
Thermal shutdown
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9 Application and Implementation
备注
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
The input to output voltage drop in the device is determined by the RON of the device and the load current. The
RON of the device depends upon the VIN and VBIAS condition of the device. See the RON specification in the 节
6.5 table of this data sheet. After the RON of the device is determined based upon the VIN and VBIAS conditions,
use the below equation to calculate the input to output voltage drop.
DV = ILOAD ì RON
where
(2)
• ΔV is the voltage drop from VIN to VOUT.
• ILOAD is the load current.
• RON is the on-resistance of the device for a specific VIN and VBIAS.
• An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated.
9.2 Typical Application
This typical application demonstrates how the TPS22995 device can be used to limit start-up inrush current.
TPS22995
VOUT
VIN
Power Supply
Load
Cin
VBIAS
ON
CT
CT
ON
GND
OFF
图9-1. TPS22995 Application Schematic
表9-1. Design Parameters
9.2.1 Design Requirements
DESIGN PARAMETER
EXAMPLE VALUE
VBIAS
5.5 V
5.5 V
VIN
CL
47 μF
None
RL
Maximum acceptable inrush current
200 mA
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9.2.2 Detailed Design Procedure
When the switch is enabled, the output capacitors must be charged up from 0 V to VIN. This charge arrives in the
form of inrush current. Use the equation below to calculate inrush current.
IINRUSH = CL × dVOUT/dt
(3)
where
• CL is the output capacitance.
• dVOUT is the change in VOUT during the ramp-up of the output voltage when device is enabled.
• dt is the rise time in VOUT during the ramp-up of the output voltage when the device is enabled.
The TPS22995 offers an adjustable rise time for VOUT, allowing the user to control the inrush current during
turn-on. The appropriate rise time can be calculated using the design requirements and the inrush current
equation as shown below.
200 mA = 47uF × 5.5 V/dt
(4)
where
dt = 1292 us
(5)
The TPS22995 has very fast rise times with CT pin open. The typical rise time is 127 μs at VBIAS = 5.5 V, VIN
=
5.5 V, RL = 100 Ω, and CL = 0.1 µF. This rise time results in an inrush current of 1.59 A. According to 表 8-1,
using RT = 10 kΩ results in a rise time of 1520 us, which limits the inrush current to 176 mA. Alternatively, can be
used to determine the capacitor needed.
9.2.3 Application Performance Plots
The below oscilloscope captures show the difference between the inrush current for CT = 0 pF and CT = 1000 pF settings.
The CT = 1000 pF setting is able to keep the inrush current under the required 200 mA, while the CT = 0 pF setting is too fast
for this design
图9-2. Inrush Current for CL = 47 µF with CT = 0 pF
图9-3. Inrush Current for CL = 47 µF with CT = 1000 pF
9.3 Power Supply Recommendations
The TPS22995 device is designed to operate with a VIN range of 0.4 V to 5.5 V. The VIN power supply must be
well regulated and placed as close to the device terminal as possible. The power supply must be able to
withstand all transient load current steps. In most situations, using an input capacitance (CIN) of 1 μF is
sufficient to prevent the supply voltage from dipping when the switch is turned on. In cases where the power
supply is slow to respond to a large transient current or large load current step, additional bulk capacitance can
be required on the input.
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9.4 Layout
9.4.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the effects that parasitic trace inductances can have
on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects.
9.4.2 Layout Example
VBIAS
Via to GND
VBIAS
VIN
CT
VOUT
GND
ON
From GPIO
Via to GND
图9-4. Layout Example (RZF, RZG)
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10 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
10.1 接收文档更新通知
要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册，即可每周接收产品信息更
改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
10.2 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅
TI 的《使用条款》。
10.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
10.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
10.5 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
11 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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21-Dec-2022
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS22995RZFR
TPS22995RZGR
ACTIVE
ACTIVE
WQFN-HR
WQFN-HR
RZF
RZG
6
6
3000 RoHS & Green
3000 RoHS & Green
SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
-40 to 125
7
6
Samples
Samples
SN
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
21-Dec-2022
Addendum-Page 2
PACKAGE OUTLINE
RZF0006A
WQFN - 0.8 mm max height
SCALE 9.000
PLASTIC SMALL OUTLINE - NO LEAD
0.9
0.8
A
B
1.3
1.2
PIN 1 INDEX AREA
0.8 MAX
C
SEATING PLANE
0.08 C
0.05
0.00
2X 0.4
(0.1)
SYMM
3
4
0.35
0.25
2X
SYMM
4X
2
5
0.3
0.2
0.3
0.2
2X
0.1
C B A
C
0.05
6
1
PIN 1 ID
(45 X 0.1)
0.25
0.15
4X
0.1
C B A
0.05
C
4228215/A 11/2021
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
RZF0006A
WQFN - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
2X (0.4)
4X (0.2)
(R0.05) TYP
1
6
4X (0.45)
2X (0.5)
SYMM
2X
(0.25)
(1.2)
5
2
3
4
SYMM
(0.75)
LAND PATTERN EXAMPLE
SCALE:40X
0.05 MAX
ALL AROUND
0.05 MIN
ALL AROUND
METAL
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4228215/A 11/2021
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If all or some are implemented, recommended via locations are shown.
It is recommended that vias under paste be filled, plugged or tented.
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EXAMPLE STENCIL DESIGN
RZF0006A
WQFN - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
2X (0.4)
4X (0.2)
(R0.05) TYP
1
6
4X (0.45)
2X (0.5)
SYMM
2X
(0.25)
(1.2)
2
5
3
4
SYMM
(0.75)
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
100% PRINTED SOLDER COVERAGE BY AREA
SCALE:50X
4228215/A 11/2021
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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PACKAGE OUTLINE
RZG0006A
WQFN-HR - 0.8mm max height
QFN (PLASTIC QUAD FLATPACK - NO LEAD)
0.8
0.7
B
A
1.55
1.45
PIN 1 INDEX AREA
0.8 MAX
C
SEATING PLANE
0.08 C
0.05
0.00
3
4
4X 0.5
SYMM
2X
1
0.3
0.2
6X
0.1
0.05
C A B
C
6
1
PIN 1 ID
(45 X0.15)
0.3
0.2
SYMM
(0.1)
TYP
6X
4228216/A 12/2021
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
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EXAMPLE BOARD LAYOUT
RZG0006A
WQFN-HR - 0.8mm max height
QFN (PLASTIC QUAD FLATPACK - NO LEAD)
6X (0.45)
(R0.05) TYP
1
6X (0.25)
6
SYMM
4X (0.5)
4
3
SYMM
(0.7)
LAND PATTERN EXAMPLE
SCALE:60X
0.05 MAX
ALL AROUND
0.05 MIN
ALL AROUND
METAL
SOLDERMASK
OPENING
METAL
SOLDERMASK
OPENING
NON SOLDERMASK
DEFINED
SOLDERMASK
DEFINED
(PREFERRED)
SOLDERMASK DETAILS
4228216/A 12/2021
NOTES: (continued)
3. For more information, refer to QFN/SON PCB application note in literature No. SLUA271 (www.ti.com/lit/slua271).
www.ti.com
EXAMPLE STENCIL DESIGN
RZG0006A
WQFN-HR - 0.8mm max height
QFN (PLASTIC QUAD FLATPACK - NO LEAD)
6X (0.45)
6
1
6X (0.25)
SYMM
4X (0.5)
3
4
SYMM
(0.7)
SOLDERPASTE EXAMPLE
BASED ON 0.1mm THICK STENCIL
EXPOSED PAD
100% SOLDER COVERAGE BY AREA
SCALE:60X
4228216/A 12/2021
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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