TPS54339DDA [TI]

4.5 V to 23 V Input, 3-A Synchronous Step-Down SWIFT Converter; 4.5 V至23 V输入, 3 -A同步降压SWIFT转换器
TPS54339DDA
型号: TPS54339DDA
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

4.5 V to 23 V Input, 3-A Synchronous Step-Down SWIFT Converter
4.5 V至23 V输入, 3 -A同步降压SWIFT转换器

转换器
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TPS54339  
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4.5 V to 23 V Input, 3-A Synchronous Step-Down SWIFT™ Converter  
Check for Samples: TPS54339  
1
FEATURES  
DESCRIPTION  
The TPS54339 is an adaptive on-time D-CAP2™  
mode synchronous buck converter. The TPS54339  
enables system designers to complete the suite of  
various end-equipment power bus regulators with a  
cost effective, low component count, low standby  
current solution. The main control loop for the  
TPS54339 uses the D-CAP2™ mode control that  
provides a fast transient response with no external  
compensation components. The TPS54339 also has  
a proprietary circuit that enables the device to adopt  
to both low equivalent series resistance (ESR) output  
capacitors, such as POSCAP or SP-CAP, and ultra-  
low ESR ceramic capacitors. The device operates  
from 4.5-V to 23-V VIN input. The output voltage can  
be programmed between 0.76 V and 7 V. The device  
also features an adjustable soft start time. The  
TPS54339 is available in the 8-pin DDA package,  
and designed to operate from –40°C to 85°C.  
23  
D-CAP2™ Mode Enables Fast Transient  
Response  
Low Output Ripple and Allows Ceramic Output  
Capacitor  
Wide VIN Input Voltage Range: 4.5 V to 23 V  
Output Voltage Range: 0.76 V to 7 V  
Highly Efficient Integrated FETs Optimized  
for Lower Duty Cycle Applications  
– 140 m(High Side) and 70 m(Low Side)  
High Efficiency, less than 10 μA at shutdown  
High Initial Bandgap Reference Accuracy  
Adjustable Soft Start  
Pre-Biased Soft Start  
600-kHz Switching Frequency (fSW  
)
Cycle By Cycle Over Current Limit  
APPLICATIONS  
Wide Range of Applications for Low Voltage  
System  
Digital TV Power Supply  
High Definition Blu-ray Disc™ Players  
Networking Home Terminal  
Digital Set Top Box (STB)  
VIN  
Vout (50 mV/div)  
TPS54339DDA  
8
7
6
5
1
2
3
4
VBST  
VIN  
SS  
EN  
EN  
Iout (2 A/div)  
VOUT  
SW  
VREG5  
GND  
VFB  
VOUT  
PwPd  
9
100 us/div  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
3
D-CAP2 is a trademark of Texas Instruments.  
Blu-ray Disc is a trademark of Blu-ray Disc Association.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2013, Texas Instruments Incorporated  
TPS54339  
SLVSBT2 JANUARY 2013  
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ORDERING INFORMATION(1)  
TRANSPORT  
TA  
PACKAGE(2) (3)  
ORDERABLE PART NUMBER  
PIN  
MEDIA  
TPS54339DDA  
Tube  
–40°C to 85°C  
DDA  
8
TPS54339DDAR  
Tape and Reel  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
(3) All package options have Cu NIPDAU lead/ball finish.  
ABSOLUTE MAXIMUM RATINGS  
over operating free-air temperature range (unless otherwise noted)  
(1)  
VALUE  
UNIT  
MIN  
–0.3  
–0.3  
–0.3  
–0.3  
–0.3  
–2  
MAX  
25  
VIN, EN  
VBST  
31  
VBST (10 ns transient)  
VBST (vs SW)  
VFB, SS  
33  
Input voltage range  
Output voltage range  
6.5  
6.5  
25  
V
V
SW  
SW (10 ns transient)  
VREG5  
–3  
27  
–0.3  
–0.3  
–0.2  
6.5  
0.3  
0.2  
2
GND  
Voltage from GND to thermal pad, Vdiff  
V
kV  
V
Human Body Model (HBM)  
Charged Device Model (CDM)  
Electrostatic discharge  
500  
150  
150  
Operating junction temperature, TJ  
Storage temperature, Tstg  
–40  
–55  
°C  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
THERMAL INFORMATION  
TPS54339  
THERMAL METRIC(1)  
UNITS  
DDA (8 PINS)  
46.2  
θJA  
Junction-to-ambient thermal resistance  
θJCtop  
θJB  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
53.9  
29.7  
°C/W  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
10.0  
ψJB  
29.6  
θJCbot  
6.6  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.  
2
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RECOMMENDED OPERATING CONDITIONS  
over operating free-air temperature range, (unless otherwise noted)  
MIN  
4.5  
MAX  
23  
UNIT  
VIN  
Supply input voltage range  
V
VBST  
–0.1  
–0.1  
–0.1  
–0.1  
–0.1  
–0.1  
–1.8  
–3  
29  
VBST (10 ns transient)  
32  
VBST(vs SW)  
5.7  
5.7  
23  
SS  
VI  
Input voltage range  
EN  
V
VFB  
5.5  
23  
SW  
SW (10 ns transient)  
GND  
26  
–0.1  
–0.1  
0
0.1  
5.7  
10  
VO  
IO  
Output voltage range  
VREG5  
V
Output Current range  
IVREG5  
mA  
°C  
°C  
TA  
TJ  
Operating free-air temperature  
Operating junction temperature  
–40  
–40  
85  
150  
ELECTRICAL CHARACTERISTICS  
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)  
PARAMETER  
SUPPLY CURRENT  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
IVIN  
Operating - non-switching supply current VIN current, TA = 25°C, EN = 5V, VFB = 0.8V  
850  
3.0  
1200  
10  
μA  
μA  
IVINSDN  
Shutdown supply current  
VIN current, TA = 25°C, EN = 0 V  
LOGIC THRESHOLD  
VENH  
VENL  
REN  
EN high-level input voltage  
EN  
1.6  
V
V
EN low-level input voltage  
EN pin resistance to GND  
EN  
0.6  
VEN = 12 V  
200  
400  
800  
kΩ  
VFB VOLTAGE AND DISCHARGE RESISTANCE  
TA = 25°C, VO = 1.05 V, continuous mode  
operation  
VFBTH  
VFB threshold voltage  
749  
765  
0
781  
mV  
IVFB  
VFB input current  
VFB = 0.8 V, TA = 25°C  
±0.1  
μA  
VREG5 OUTPUT  
TA = 25°C, 6.0 V < VIN < 23 V,  
0 < IVREG5 < 5 mA  
VVREG5  
VREG5 output voltage  
5.2  
20  
5.5  
5.7  
V
IVREG5  
Output current  
VIN = 6 V, VREG5 = 4.0 V, TA = 25°C  
mA  
MOSFET  
RDS(on)h  
RDS(on)l  
High side switch resistance  
Low side switch resistance  
25°C, VBST - SW = 5.5 V(1)  
25°C(1)  
140  
70  
mΩ  
mΩ  
CURRENT LIMIT  
Iocl  
Current limit  
L out = 2.2 μH(1)  
3.5  
4.1  
5.7  
A
THERMAL SHUTDOWN  
(1)  
Shutdown temperature  
165  
40  
TSDN  
Thermal shutdown threshold  
°C  
(1)  
Hysteresis  
ON-TIME TIMER CONTROL  
tON  
On time  
VIN = 12 V, VO = 1.05 V  
TA = 25°C, VFB = 0.7 V(1)  
160  
260  
ns  
ns  
tOFF(MIN)  
Minimum off time  
310  
(1) Not production tested.  
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ELECTRICAL CHARACTERISTICS (continued)  
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
SOFT START  
ISSC  
ISSD  
SS charge current  
VSS = 1.0 V  
VSS = 0.5 V  
4.2  
0.8  
6.0  
1.5  
7.8  
μA  
SS discharge current  
mA  
HICCUP AND OVERVOLTAGE PROTECTION  
VOVP  
Output OVP threshold  
Output Hiccup threshold  
Output Hiccup delay  
OVP Detect (L>H)  
Hiccup detect (H>L)  
to Hiccup state  
125%  
65%  
6
VUVP  
TUVPDEL  
TUVPEN  
UVLO  
µs  
V
Output Hiccup Enable delay  
Relative to soft-start time  
x1.7  
Wake up VREG5 voltage  
Hysteresis VREG5 voltage  
3.45  
0.17  
3.75  
0.33  
4.05  
0.47  
UVLO  
UVLO threshold  
DEVICE INFORMATION  
DDA PACKAGE  
(TOP VIEW)  
8
1
VBST  
SS  
2
7
VIN  
EN  
POWER PAD  
TPS54339  
DDA  
3
HSOP8  
6
VREG5  
SW  
4
5
VFB  
GND  
PIN FUNCTIONS  
PIN  
DESCRIPTION  
NAME  
NO.  
Supply input for the high-side FET gate drive circuit. Connect 0.1µF capacitor between VBST and SW pins.  
An internal diode is connected between VREG5 and VBST.  
VBST  
1
VIN  
SW  
2
3
Input voltage supply pin.  
Switch node connection between high-side NFET and low-side NFET.  
Ground pin. Power ground return for switching circuit. Connect sensitive SS and VFB returns to GND at a  
single point.  
GND  
VFB  
4
5
Converter feedback input. Connect to output voltage with feedback resistor divider.  
4
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PIN FUNCTIONS (continued)  
PIN  
DESCRIPTION  
NAME  
NO.  
5.5 V power supply output. A capacitor (typical 0.47 µF) should be connected to GND. VREG5 is not active  
when EN is low.  
VREG5  
6
EN  
SS  
7
8
Enable input control. EN is active high and must be pulled up to enable the device.  
Soft-start control. An external capacitor should be connected to GND.  
Exposed  
Thermal Pad  
Thermal pad of the package. Must be soldered to achieve appropriate dissipation. Must be connected to  
GND.  
Back side  
FUNCTIONAL BLOCK DIAGRAM  
SS  
8
Softstart  
SS  
VBST  
VIN  
1
VIN  
SGND  
EN  
EN  
7
2
Logic  
VREG5  
VREG5  
Control Logic  
1 Shot  
6
OV  
SW  
3
VO  
+25%  
XCON  
PGND  
VREG5  
Ceramic  
Capacitor  
Ref  
PWM  
SS  
4
5
GND  
VFB  
SW  
SGND  
OCP  
PGND  
VIN  
OV  
VREG5  
Protection  
Logic  
UVLO  
TSD  
UVLO  
Ref  
REF  
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OVERVIEW  
The TPS54339 is a 3-A synchronous step-down (buck) converter with two integrated N-channel MOSFETs. It  
operates using D-CAP2™ mode control. The fast transient response of D-CAP2™ control reduces the output  
capacitance required to meet a specific level of performance. Proprietary internal circuitry allows the use of low  
ESR output capacitors including ceramic and special polymer types.  
DETAILED DESCRIPTION  
PWM Operation  
The main control loop of the TPS54339 is an adaptive on-time pulse width modulation (PWM) controller that  
supports a proprietary D-CAP2™ mode control. D-CAP2™ mode control combines constant on-time control with  
an internal compensation circuit for pseudo-fixed frequency and low external component count configuration with  
both low ESR and ceramic output capacitors. It is stable even with virtually no ripple at the output.  
At the beginning of each cycle, the high-side MOSFET is turned on. This MOSFET is turned off after internal one  
shot timer expires. This one shot is set by the converter input voltage, VIN, and the output voltage, VO, to  
maintain a pseudo-fixed frequency over the input voltage range, hence it is called adaptive on-time control. The  
one-shot timer is reset and the high-side MOSFET is turned on again when the feedback voltage falls below the  
reference voltage. An internal ramp is added to reference voltage to simulate output ripple, eliminating the need  
for ESR induced output ripple from D-CAP2™ mode control.  
PWM Frequency and Adaptive On-Time Control  
TPS54339 uses an adaptive on-time control scheme and does not have a dedicated on board oscillator. The  
TPS54339 runs with a pseudo-constant frequency of 600 kHz by using the input voltage and output voltage to  
set the on-time one-shot timer. The on-time is inversely proportional to the input voltage and proportional to the  
output voltage; therefore, when the duty ratio is VOUT/VIN, the frequency is constant.  
Soft Start and Pre-Biased Soft Start  
The soft start function is adjustable. When the EN pin becomes high, 6 μA current begins charging the capacitor  
which is connected from the SS pin to GND. Smooth control of the output voltage is maintained during start up.  
The equation for the slow start time is shown in Equation 1. VFB voltage is 0.765 V and SS pin source current is  
6 μA.  
C
(nF) x V  
´1.1  
C
(nF) x 0.765´1.1  
SS  
REF  
SS  
t
(ms) =  
=
SS  
I
(mA)  
6
SS  
(1)  
The TPS54339 contains a unique circuit to prevent current from being pulled from the output during startup if the  
output is pre-biased. When the soft-start commands a voltage higher than the pre-bias level (internal soft start  
becomes greater than feedback voltage VFB), the controller slowly activates synchronous rectification by starting  
the first low side FET gate driver pulses with a narrow on-time. It then increments that on-time on a cycle-by-  
cycle basis until it coincides with the time dictated by (1-D), where D is the duty cycle of the converter. This  
scheme prevents the initial sinking of the pre-bias output, and ensure that the out voltage (VO) starts and ramps  
up smoothly into regulation and the control loop is given time to transition from pre-biased start-up to normal  
mode operation.  
Current Protection  
The output overcurrent protection (OCP) is implemented using a cycle-by-cycle valley detect control circuit. The  
switch current is monitored by measuring the low-side FET switch voltage between the SW pin and GND. This  
voltage is proportional to the switch current. To improve accuracy, the voltage sensing is temperature  
compensated.  
During the on time of the high-side FET switch, the switch current increases at a linear rate determined by VIN,  
VOUT, the on-time and the output inductor value. During the on time of the low-side FET switch, this current  
decreases linearly. The average value of the switch current is the load current Iout. The TPS54339 constantly  
monitors the low-side FET switch voltage, which is proportional to the switch current, during the low-side on-time.  
If the measured voltage is above the voltage proportional to the current limit, an internal counter is incremented  
per each SW cycle and the converter maintains the low-side switch on until the measured voltage is below the  
voltage corresponding to the current limit at which time the switching cycle is terminated and a new switching  
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cycle begins. In subsequent switching cycles, the on-time is set to a fixed value and the current is monitored in  
the same manner. If the over current condition exists for 7 consecutive switching cycles, the internal OCL  
threshold is set to a lower level, reducing the available output current. When a switching cycle occurs where the  
switch current is not above the lower OCL threshold, the counter is reset and the OCL limit is returned to the  
higher value.  
There are some important considerations for this type of over-current protection. The load current one half of the  
peak-to-peak inductor current higher than the over-current threshold. Also when the current is being limited, the  
output voltage tends to fall as the demanded load current may be higher than the current available from the  
converter. This may cause the output voltage to fall. When the VFB voltage becomes lower than 65% of the  
target voltage, the UVP comparator detects it. After 6µs detecting the UVP voltage, device will shut down and re-  
start after 7 times SS period for Hiccup.  
When the over current condition is removed, the output voltage returns to the regulated value. This protection is  
non-latching.  
Over Voltage Protection  
TPS54339 detects over voltage conditions by monitoring the feedback voltage (VFB). This function is enabled  
after approximately 1.7 x times the soft start time.  
When the feedback voltage becomes higher than 125% of the target voltage, the OVP comparator output goes  
high and both the high-side MOSFET driver and the low-side MOSFET driver turn off. This function is non-latch  
operation.  
UVLO Protection  
Undervoltage lock out protection (UVLO) monitors the voltage of the VREG5 pin. When the VREG5 voltage is lower  
than UVLO threshold voltage, the TPS54339 is shut off. This protection is non-latching.  
Thermal Shutdown  
TPS54339 monitors the temperature of itself. If the temperature exceeds the threshold value (typically 165°C),  
the device is shut off. This is non-latch protection.  
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TYPICAL CHARACTERISTICS  
VIN = 12 V, TA = 25°C (unless otherwise noted).  
1200  
1000  
800  
10  
8
6
600  
4
400  
2
200  
0
0
œ50  
0
50  
100  
150  
œ50  
0
50  
100  
150  
C001  
C002  
TJ œ Junction Temperature (°C)  
TJ œ Junction Temperature (°C)  
Figure 1. VIN CURRENT vs JUNCTION TEMPERATURE  
Figure 2. VIN SHUTDOWN CURRENT vs  
JUNCTION TEMPERATURE  
1.100  
1.075  
1.050  
1.025  
1.000  
80  
VIN = 23 V  
VIN = 23 V  
VIN = 12 V  
60  
40  
20  
0
VIN = 5 V  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
5
10  
15  
20  
25  
C004  
C003  
IOUT œ Output Current (A)  
EN Input Voltage (V)  
Figure 3. EN CURRENT vs EN VOLTAGE  
Figure 4. 1.05-V OUTPUT VOLTAGE vs OUTPUT CURRENT  
1.07  
1.06  
1.05  
1.04  
1.03  
IOUT = 0 A  
Vout (50 mV/div)  
Iout (2 A/div)  
IOUT = 1 A  
100 us/div  
0
5
10  
15  
20  
25  
C005  
VIN œ Input Voltage (V)  
Figure 5. 1.05-V OUTPUT VOLTAGE vs INPUT VOLTAGE  
Figure 6. 1.05-V, LOAD TRANSIENT RESPONSE  
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TYPICAL CHARACTERISTICS  
VIN = 12 V, TA = 25°C (unless otherwise noted).  
100  
90  
EN (10 V/div)  
80  
VO = 3.3 V  
VREG5 (5 V/div)  
VO = 5 V  
VO = 1.8 V  
70  
60  
50  
40  
Vout (0.5 V/div)  
400 us/div  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
C006  
IOUT œ Output Current (A)  
Figure 7. START-UP WAVE FORM  
Figure 8. EFFICIENCY vs OUTPUT CURRENT  
900  
850  
800  
750  
700  
650  
600  
550  
500  
450  
400  
800  
700  
600  
500  
400  
300  
200  
100  
0
VO = 3.3 V  
VO = 3.3 V  
VO = 1.8 V  
VO = 5 V  
VO = 1.8 V  
VO = 1.05 V  
VO = 1.2 V  
VO = 1.05 V  
20  
0
5
10  
15  
25  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
C007  
C008  
VIN œ Input Voltage (V)  
IOUT œ Output Current (A)  
Figure 9. SWITCHING FREQUENCY vs  
INPUT VOLTAGE (IO = 1 A)  
Figure 10. SWITCHING FREQUENCY vs OUTPUT CURRENT  
0.780  
0.775  
0.770  
0.765  
0.760  
0.755  
0.750  
IOUT = 1 A  
Vo = 1.05 V  
Vo (10 mV/div)  
SW (5 V/div)  
400 ns/div  
œ50  
0
50  
100  
150  
C009  
TJ œ Junction Temperature (°C)  
Figure 11. VFB VOLTAGE vs JUNCTION  
TEMPERATURE (IO = 1 A)  
Figure 12. VOLTAGE RIPPLE AT OUTPUT (IO = 3A)  
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TYPICAL CHARACTERISTICS (continued)  
VIN = 12 V, TA = 25°C (unless otherwise noted).  
Vo = 1.05 V  
VIN (50 mV/div)  
SW (5 V/div)  
400 ns/div  
Figure 13. VOLTAGE RIPPLE AT INPUT (IO = 3 A)  
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DESIGN GUIDE  
Step-By-Step Design Procedure  
To begin the design process, the user must know a few application parameters:  
Input voltage range  
Output voltage  
Output current  
Output voltage ripple  
Input voltage ripple  
VIN  
4.5 to 23V  
VIN  
C2  
C1  
C3  
10μF  
10μF  
0.1μF  
U1  
TPS54339DDA  
R3 10.0kΩ  
7
5
6
8
2
1
EN  
EN  
VIN  
C7 0.1μF  
VOUT  
1.05V 3A  
VOUT  
VFB  
VREG5  
SS  
VBST  
SW  
R1 8.25kΩ  
L1  
3
4
VOUT  
R2  
22.1kΩ  
2.2μH  
C4  
1
GND  
C8  
C9  
C10  
C5  
0.47μF  
PwrPAD  
1
C6  
22μF 22μF  
9
8200pF  
Not Installed  
1
Figure 14. Shows the schematic diagram for this design example.  
Output Voltage Resistors Selection  
The output voltage is set with a resistor divider from the output node to the VFB pin. It is recommended to use  
1% tolerance or better divider resistors. Start by using Equation 2 to calculate VOUT  
.
To improve efficiency at light loads consider using larger value resistors, high resistance is more susceptible to  
noise, and the voltage errors from the VFB input current are more noticeable.  
æ
ö
÷
÷
R1  
ç
= 0.765 x 1 +  
V
OUT  
ç
÷
÷
ø
ç
è
R2  
(2)  
Output Filter Selection  
The output filter used with the TPS54339 is an LC circuit. This LC filter has double pole at:  
1
F
P
=
2p L  
x C  
OUT  
OUT  
(3)  
11  
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At low frequencies, the overall loop gain is set by the output set-point resistor divider network and the internal  
gain of the TPS54339. The low frequency phase is 180 degrees. At the output filter pole frequency, the gain rolls  
off at a –40 dB per decade rate and the phase drops rapidly. D-CAP2™ introduces a high frequency zero that  
reduces the gain roll off to –20 dB per decade and increases the phase to 90 degrees one decade above the  
zero frequency. The inductor and capacitor selected for the output filter must be selected so that the double pole  
of Equation 3 is located below the high frequency zero but close enough that the phase boost provided be the  
high frequency zero provides adequate phase margin for a stable circuit. To meet this requirement use the  
values recommended in Table 1  
Table 1. Recommended Component Values  
Output  
Voltage R1 (kΩ) R2 (kΩ)  
(V)  
C4 (pF)(1)  
L1 (µH)  
Typ  
C8 + C9 + C10 (µF)  
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
1
1.05  
1.2  
1.5  
1.8  
2.5  
3.3  
5
6.81  
8.25  
12.7  
21.5  
30.1  
49.9  
73.2  
124  
22.1  
22.1  
22.1  
22.1  
22.1  
22.1  
22.1  
22.1  
22.1  
5
5
5
5
5
5
5
5
5
150  
150  
220  
220  
100  
68  
1.5  
1.5  
1.5  
1.5  
2.2  
2.2  
2.2  
3.3  
3.3  
2.2  
2.2  
2.2  
2.2  
3.3  
3.3  
3.3  
4.7  
4.7  
4.7  
4.7  
4.7  
4.7  
4.7  
4.7  
4.7  
22  
22  
22  
22  
22  
22  
22  
22  
22  
68  
68  
68  
68  
68  
68  
68  
68  
68  
22  
22  
22  
22  
6.5  
165  
22  
(1) Optional  
Since the DC gain is dependent on the output voltage, the required inductor value increases as the output  
voltage increases. Additional phase boost can be achieved by adding a feed forward capacitor (C4) in parallel  
with R1. The amount of available phase boost is dependent on the output voltage. Higher output voltages will  
allow greater phase boost.  
The inductor peak-to-peak ripple current, peak current and RMS current are calculated using Equation 4,  
Equation 5 and Equation 6. The inductor saturation current rating must be greater than the calculated peak  
current and the RMS or heating current rating must be greater than the calculated RMS current. Use 600 kHz for  
fSW  
.
Use 600 kHz for fSW. Make sure the chosen inductor is rated for the peak current of Equation 5 and the RMS  
current of Equation 6.  
V
- VOUT  
VOUT  
IN(MAX)  
IlP-P  
=
´
V
LO ´ ¦SW  
IN(MAX)  
(4)  
(5)  
IlP-P  
IlPEAK =IO+  
2
1
2
2
ILO(RMS)  
=
IO  
+
IlP-P  
12  
(6)  
For this design example, the calculated peak current is 3.38 A and the calculated RMS current is 3.01 A. The  
inductor used is a TDK CLF7045T-2R2N with a peak current rating of 5.5 A and an RMS current rating of 4.3 A.  
For high current designs, TDK SPM6530T-4R7M 4.7µH is also recommended. The SPM6530 series has a higher  
current rating than the CLF7045 series.  
The capacitor value and ESR determines the amount of output voltage ripple. The TPS54339 is intended for use  
with ceramic or other low ESR capacitors. Recommended values range from 22µF to 68µF. Use Equation 7 to  
determine the required RMS current rating for the output capacitor.  
V
x (V - V  
)
OUT  
IN  
OUT  
I
=
Co(RMS)  
12 x V x L  
IN  
x
fSW  
O
(7)  
For this design two TDK C3216X5R0J226M 22µF output capacitors are used. The typical ESR is 2 mΩ each.  
The calculated RMS current is 0.22 A and each output capacitor is rated for 4A.  
12  
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Input Capacitor Selection  
The TPS54339 requires an input decoupling capacitor and a bulk capacitor is needed depending on the  
application. A ceramic capacitor over 10 μF is recommended for the decoupling capacitor. An additional 0.1 µF  
capacitor from pin 2 to ground is optional to provide additional high frequency filtering. The capacitor voltage  
rating needs to be greater than the maximum input voltage.  
Bootstrap Capacitor Selection  
A 0.1 µF. ceramic capacitor must be connected between the VBST to SW pin for proper operation. It is  
recommended to use a ceramic capacitor.  
VREG5 Capacitor Selection  
A 0.47 µF. ceramic capacitor must be connected between the VREG5 to GND pin for proper operation. It is  
recommended to use a ceramic capacitor.  
THERMAL INFORMATION  
This 8-pin DDA package incorporates an exposed thermal pad that is designed to be directly to an external  
heartsick. The thermal pad must be soldered directly to the printed board (PCB). After soldering, the PCB can be  
used as a heartsick. In addition, through the use of thermal vias, the thermal pad can be attached directly to the  
appropriate copper plane shown in the electrical schematic for the device, or alternatively, can be attached to a  
special heartsick structure designed into the PCB. This design optimizes the heat transfer from the integrated  
circuit (IC).  
For additional information on the exposed thermal pad and how to use the advantage of its heat dissipating  
abilities, see the Technical Brief, PowerPAD™ Thermally Enhanced Package, Texas Instruments Literature No.  
SLMA002 and Application Brief, PowerPAD™ Made Easy, Texas Instruments Literature No. SLMA004.  
The exposed thermal pad dimensions for this package are shown in the following illustration.  
8
5
Exposed Thermal Pad  
2,40  
1,65  
1
4
3,10  
2,65  
Figure 15. Thermal Pad Dimensions  
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LAYOUT CONSIDERATIONS  
1. Keep the input switching current loop as small as possible.  
2. Keep the SW node as physically small and short as possible to minimize parasitic capacitance and  
inductance and to minimize radiated emissions. Kelvin connections should be brought from the output to the  
feedback pin of the device.  
3. Keep analog and non-switching components away from switching components.  
4. Make a single point connection from the analog ground to power ground.  
5. Do not allow switching current to flow under the device.  
6. Keep the pattern lines for VIN and PGND broad.  
7. Exposed pad of device must be connected to PGND with solder.  
8. VREG5 capacitor should be placed near the device, and connected to PGND.  
9. Output capacitor should be connected to a broad pattern of the PGND.  
10. Voltage feedback loop should be as short as possible, and preferably with ground shield.  
11. Lower resistor of the voltage divider which is connected to the VFB pin should be tied to analog ground  
trace.  
12. Providing sufficient via is preferable for VIN, SW and PGND connection.  
13. VIN input bypass capacitor and VIN high frequency bypass capacitor must be placed as near as possible to  
the device.  
14. Performance based on four layer printed circuit board.  
SOFT  
START  
Additional  
CAP  
Thermal  
Vias  
VIN INPUT  
BYPASS  
TO ENABLE  
CONTROL  
CAPACITOR  
Connection to  
POWER GROUND  
on internal or  
VIN  
VBST  
VIN  
SS  
EN  
bottom layer  
BOOST  
CAPACITOR  
BIAS  
CAP  
VOUT  
FEEDBACK  
RESISTORS  
VREG5  
VFB  
SW  
OUTPUT  
INDUCTO
EXPOSED  
POWERPAD  
AREA  
GND  
VIN INPUT  
BYPASS  
CAPACITOR  
OUTPUT  
FILTER  
CAPACITOR  
Additional  
Thermal  
Vias  
ANALOG  
GROUND  
TRACE  
POWER GROUND  
Figure 16. PCB Layout  
14  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
13-Feb-2013  
PACKAGING INFORMATION  
Orderable Device  
TPS54339DDA  
Status Package Type Package Pins Package Qty  
Eco Plan Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-40 to 85  
Top-Side Markings  
Samples  
Drawing  
(1)  
(2)  
(3)  
(4)  
ACTIVE SO PowerPAD  
DDA  
8
8
75  
Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR  
& no Sb/Br)  
TPS54339DDAR  
ACTIVE SO PowerPAD  
DDA  
2500  
Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR  
& no Sb/Br)  
-40 to 85  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) Only one of markings shown within the brackets will appear on the physical device.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
19-Feb-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TPS54339DDAR  
SO  
Power  
PAD  
DDA  
8
2500  
330.0  
12.8  
6.4  
5.2  
2.1  
8.0  
12.0  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
19-Feb-2013  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SO PowerPAD DDA  
SPQ  
Length (mm) Width (mm) Height (mm)  
366.0 364.0 50.0  
TPS54339DDAR  
8
2500  
Pack Materials-Page 2  
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