TPS549D22RVFT [TI]
具有差分遥感功能和 PMBus 的 1.5V 至 16V、40A 同步 SWIFT™ 降压转换器 | RVF | 40 | -40 to 125;型号: | TPS549D22RVFT |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有差分遥感功能和 PMBus 的 1.5V 至 16V、40A 同步 SWIFT™ 降压转换器 | RVF | 40 | -40 to 125 转换器 |
文件: | 总70页 (文件大小:10401K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TPS549D22
ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
TPS549D22 1.5V 至 16V VIN、4.5V 至 22V VDD、40A 且具有全差分感应
功能和PMBus™的
SWIFT™ 同步降压转换器
1 特性
2 应用
1
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输入电压范围 (PVIN):1.5V 至 16V
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企业级存储、SSD、NAS
输入偏置电压 (VDD) 范围:4.5V 至 22V
输出电压范围:0.6V 至 5.5V
无线和有线通信基础设施
工业 PC、自动化、ATE、PLC、视频监控
企业服务器、交换机、路由器
集成式 2.9mΩ 和 1.2mΩ 功率 MOSFET,持续输
出电流为 40A
ASIC、SoC、FPGA、DSP 内核和 I/O 电源轨
•
•
电压基准 0.6V 至 1.2V(阶跃为 50mV),采用
VSEL 引脚
3 说明
±0.5%,0.9VREF 公差范围:–40°C 至 +125°C 结
温
TPS549D22 器件是一款紧凑型单通道降压转换器,具
有自适应导通时间 D-CAP3 模式控制。该器件专为高
精度、高效率、快速瞬态响应、易于使用、外部组件较
少且空间受限的电源系统而设计。
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真正的差分遥感放大器
D-CAP3™控制环路,
自适应导通时间控制,具有 8 种 PMBusTM
频
该器件 采用 全差分感应和 TI 集成 FET,高侧导通电
阻为 2.9mΩ,低侧导通电阻为 1.2mΩ。此外,该器件
还 具有 0.5% 的精度和 0.9V 基准电压,环境温度范围
介于 –40°C 和 +125°C 之间。其竞争 优势 包括:极少
的外部组件数、精确的负载调节和线路调节、自动跳跃
或 FCCM 工作模式以及内部软启动控制。
率:315kHz、425kHz、550kHz、650kHz、
825kHz、900kHz、1.025MHz 和 1.125MHz
•
温度补偿和可编程电流限值,具有 RILIM 和 OC 钳
位
•
•
•
•
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可选断续或闭锁 OVP 或 UVP
通过精确的 EN 实现的 VDD UVLO 外部调整
预偏置启动支持
TPS549D22 器件采用 7mm × 5mm、40 引脚、
LQFN-CLIP (RVF) 封装(RoHs 豁免)。
Eco-mode™和 FCCM 可供选择
全套故障保护和 PGOOD
器件信息(1)
标准 VOUT_COMMAND 和 VOUT_MARGIN(高
电平和低电平)
器件型号
TPS549D22
封装
封装尺寸(标称值)
LQFN-CLIP (40)
7.00mm × 5.00mm
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•
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引脚捆绑和实时编程
故障报告和警告
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
针对所选命令的 NVM 备份
1MHz PMBus,支持 PEC 和 SMB_ALRT#
使用 TPS549D22 并借助 WEBENCH® 电源设计器
创建定制设计方案
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLUSCI9
TPS549D22
ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
www.ti.com.cn
简化应用
PVIN
VSEL
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
MODE
PGOOD
PGOOD
ILIM
TPS549D22
RESV_TRK
RSN
Load
+
œ
RSP
VOSNS
ALERT#
DATA
CLOCK
ENABLE
Copyright
© 2016, Texas Instruments Incorporated
2
版权 © 2016–2017, Texas Instruments Incorporated
TPS549D22
www.ti.com.cn
ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
目录
1
2
3
4
5
6
特性.......................................................................... 1
8
9
Application and Implementation ........................ 43
8.1 Application Information............................................ 43
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 3
Pin Configuration and Functions......................... 4
Specifications......................................................... 5
6.1 Absolute Maximum Ratings ...................................... 5
6.2 ESD Ratings.............................................................. 5
6.3 Recommended Operating Conditions....................... 5
6.4 Thermal Information.................................................. 6
6.5 Electrical Characteristics........................................... 6
6.6 Typical Characteristics............................................ 10
Detailed Description ............................................ 14
7.1 Overview ................................................................. 14
7.2 Functional Block Diagram ....................................... 15
7.3 Feature Description................................................. 15
7.4 Device Functional Modes........................................ 19
7.5 Programming........................................................... 19
8.2 Typical Application: TPS549D22 1.5-V to 16-V Input,
1-V Output, 40-A Converter ..................................... 44
Power Supply Recommendations...................... 55
10 Layout................................................................... 55
10.1 Layout Guidelines ................................................. 55
10.2 Layout Example .................................................... 56
11 器件和文档支持 ..................................................... 59
11.1 器件支持 ............................................................... 59
11.2 使用 WEBENCH® 工具定制设计方案 ................... 59
11.3 接收文档更新通知 ................................................. 59
11.4 社区资源................................................................ 59
11.5 商标....................................................................... 59
11.6 静电放电警告......................................................... 59
11.7 Glossary................................................................ 59
12 机械、封装和可订购信息....................................... 60
12.1 Package Option Addendum .................................. 61
7
4 修订历史记录
注:之前版本的页码可能与当前版本有所不同。
Changes from Original (August 2016) to Revision A
Page
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•
已更改 将封装名称纠正为“LQFN-CLIP”.................................................................................................................................. 1
添加了 WEBENCH 的链接...................................................................................................................................................... 1
Added MIN and MAX values for VDD UVLO rising threshold................................................................................................ 6
Added MIN and MAX for all Soft Start settings and table notes 3 and 4 in Electrical Characteristics................................... 8
Changed VOUT = 5 V to VOUT = 5.5 V for Figure 24 ............................................................................................................. 16
Added note 2 for "Allowable Mode Selection" table ............................................................................................................ 21
Added Application Workaround to Support 4-ms and 8-ms SS Settings ............................................................................. 21
Added Figure 27 and Figure 28............................................................................................................................................ 21
Added "programmable" between "1-ms" and "delay"........................................................................................................... 23
Changed 0, 1, 4 from "R/W" to "R" in ON_OFF CONFIG figure and table .......................................................................... 29
Deleted duplicative STATUS_BYTE table and figure........................................................................................................... 33
Changed "286" to "2.86" in Minimum Output Capacitance to Ensure Stability subsection ................................................. 47
Changed "1.6 µs" to "1.538 µs"; "150 ns" to "300 ns"; and "963 µF" to "969 µF" in Response to a Load Transient .......... 48
Copyright © 2016–2017, Texas Instruments Incorporated
3
TPS549D22
ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
www.ti.com.cn
5 Pin Configuration and Functions
RVF Package
40-Pin LQFN-CLIP With Thermal Pad
Top View
32
26
27
21
31 30 29 28
25 24 23 22
PGND
PGND
20
19
18
17
16
15
33
34
35
36
37
38
VSEL
MODE
PGND
PGND
PGND
PGND
PGND
PGND
PGOOD
ILIM
RESV_TRK
RSN
Thermal Pad
14
13
39
40
RSP
VOSNS
6
7
8
9
10 11 12
1
2
3
4
5
Pin Functions
PIN
I/O/P(1)
DESCRIPTION
NAME
AGND
NO.
30
G
P
Ground pin for internal analog circuits.
Supply rail for high-side gate driver (boot terminal). Connect boot capacitor from this pin to SW
node. Internally connected to BP via bootstrap PMOS switch.
BOOT
5
BP
31
29
O
P
LDO output
DRGND
Internal gate driver return.
Enable pin that can turn on the DC/DC switching converter. Use also to program the required
PVIN UVLO when PVIN and VDD are connected together.
EN_UVLO
4
I
ADDR
ILIM
32
36
34
27
I
I/O
I
Program device address and SKIP or FCCM mode.
Program overcurrent limit by connecting a resistor to ground.
Mode selection pin. Select the control mode (DCAP3 or DCAP), and soft-start timing selection.
No connect.
MODE
NC
13, 14, 15,
16, 17, 18,
19, 20
PGND
P
Power ground of internal FETs.
PGOOD
35
3
O
I
Open drain power good status signal.
Clock input for the PMBus interface.
Data I/O for the PMBus interface.
PMB_CLK
PMB_DATA
2
I/O
21, 22, 23,
24, 25, 26
PVIN
P
Power supply input for integrated power MOSFET pair.
RSN
38
39
37
1
I
I
Inverting input of the differential remote sense amplifier.
Non-inverting input of the differential remote sense amplifier.
Do not connect.
RSP
RESV_TRK
SMB_ALRT#
I
O
Alert output for the PMBus interface.
6 , 7, 8, 9,
10, 11, 12
SW
I/O
Output switching terminal of power converter. Connect the pins to the output inductor.
VDD
28
40
P
I
Controller power supply input.
Output voltage monitor input pin.
VOSNS
Program the initial start-up and or reference voltage without feedback resistor dividers (from
0.6 V to 1.2 V in 50-mV increments).
VSEL
33
I
(1) I = input, O = output, G = GND
4
Copyright © 2016–2017, Texas Instruments Incorporated
TPS549D22
www.ti.com.cn
ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)(2)
MIN
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–5
MAX
25
UNIT
PVIN
VDD
25
BOOT
34
DC
BOOT to SW
7.7
9.0
6
< 10 ns
PMB_CLK, PMB_DATA
Input voltage
V
EN_UVLO, VOSNS, MODE, ADDR, ILIM
7.7
3.6
0.3
0.3
25
RSP, RESV_TRK, VSEL
RSN
PGND, AGND, DRGND
DC
SW
< 10 ns
27
Output voltage
PGOOD, BP
–0.3
–0.3
–55
7.7
6
V
V
Output voltage
SMB_ALRT#, PMB_DATA
Junction temperature, TJ
Storage temperature, Tstg
150
150
°C
°C
–55
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the network ground terminal unless otherwise noted.
6.2 ESD Ratings
VALUE
±2000
±500
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
Electrostatic
discharge
V(ESD)
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
16
UNIT
PVIN
VDD
1.5
4.5
22
BOOT
–0.1
–0.1
–0.1
–0.1
–0.1
–0.1
–0.1
–0.1
–0.1
–5
24.5
6.5
7
DC
BOOT to SW
< 10 ns
PMB_CLK, PMB_DATA
5.5
5.5
3.3
0.1
0.1
18
Input voltage
V
EN_UVLO, VOSNS, MODE, ADDR, ILIM
RSP, RESV_TRK, VSEL
RSN
PGND, AGND, DRGND
DC
SW
< 10 ns
27
Output voltage
PGOOD, BP
–0.1
–0.1
–40
7
V
V
Output voltage
SMB_ALRT#, PMB_DATA
5.5
125
Junction temperature, TJ
°C
Copyright © 2016–2017, Texas Instruments Incorporated
5
TPS549D22
ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
www.ti.com.cn
6.4 Thermal Information
TPS549D22
THERMAL METRIC(1)
RVF (LQFN-CLIP)
UNIT
(40 PINS)
28.5
18.3
3.6
RθJA
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
0.96
3.6
ψJB
RθJC(bot)
0.6
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
over operating free-air temperature range, VVDD = 12 V, VEN_UVLO = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
MOSFET ON-RESISTANCE (RDS(on)
)
High-side FET
RDS(on)
(VBOOT – VSW) = 5 V, ID = 25 A, TJ = 25°C
VVDD = 5 V, ID = 25 A, TJ = 25°C
2.9
1.2
mΩ
mΩ
Low-side FET
INPUT SUPPLY AND CURRENT
VVDD
VDD supply voltage
Nominal VDD voltage range
4.5
22
V
No load, power conversion enabled (no switching),
TA = 25°C,
IVDD
VDD bias current
2
mA
µA
IVDDSTBY
VDD standby current
No load, power conversion disabled, TA = 25°C
700
UNDERVOLTAGE LOCKOUT
VVDD_UVLO
VDD UVLO rising threshold
4.23
4.25
0.2
4.34
V
V
VVDD_UVLO(HYS) VDD UVLO hysteresis
VEN_ON_TH
VEN_HYS
EN_UVLO on threshold
EN_UVLO hysteresis
1.45
270
1.6
1.75
340
V
300
mV
EN_UVLO input leakage
current
IEN_LKG
VEN_UVLO = 5 V
–1
0
1
µA
INTERNAL REFERENCE VOLTAGE AND RANGE
VINTREF
Internal REF voltage
900.4
mV
Internal REF voltage
tolerance
VINTREFTOL
VINTREF
–40°C ≤ TJ ≤ 125°C
–0.5%
0.6
0.5%
1.2
Internal REF voltage range
V
OUTPUT VOLTAGE
Loop comparator input offset
VIOS_LPCMP
–2.5
2.5
1
mV
voltage(1)
IRSP
RSP input current
VO discharge current
VRSP = 600 mV
–1
8
µA
IVO(dis)
VVO = 0.5 V, power conversion disabled
12
7
mA
DIFFERENTIAL REMOTE SENSE AMPLIFIER
fUGBW
A0
Unity gain bandwidth(1)
Open loop gain(1)
Slew rate(1)
Input range(1)
Input offset voltage(1)
5
MHz
dB
75
SR
±4.7
V/µsec
V
VIRNG
VOFFSET
–0.2
–3.5
1.8
3.5
mV
INTERNAL BOOT STRAP SWITCH
VF
Forward voltage
VBP-BOOT, IF = 10 mA, TA = 25°C
0.1
0.2
1.5
V
IBOOT
VBST leakage current
VBOOT = 30 V, VSW = 25 V, TA = 25°C
0.01
µA
(1) Specified by design. Not production tested.
6
Copyright © 2016–2017, Texas Instruments Incorporated
TPS549D22
www.ti.com.cn
ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
Electrical Characteristics (continued)
over operating free-air temperature range, VVDD = 12 V, VEN_UVLO = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
SWITCHING FREQUENCY
275
380
490
585
740
790
920
950
315
425
550
650
825
900
1025
1125
60
350
475
615
740
fSW
VO switching frequency(2)
VIN = 12 V, VVO = 1 V, TA = 25°C
kHz
930
995
1160
1250
tON(min)
Minimum on time(1)
Minimum off time(1)
ns
ns
tOFF(min)
DRVH falling to rising
300
MODE, VSEL, ADDR DETECTION
Open
RLOW = 187 kΩ
VBP
1.9091
1.8243
1.7438
1.6725
1.6042
1.5348
1.465
RLOW = 165 kΩ
RLOW = 147 kΩ
RLOW = 133 kΩ
RLOW = 121 kΩ
RLOW = 110 kΩ
RLOW = 100 kΩ
RLOW = 90.9 kΩ
RLOW = 82.5 kΩ
RLOW = 75 kΩ
1.3952
1.3245
1.2557
1.187
RLOW = 68.1 kΩ
RLOW = 60.4 kΩ
RLOW = 53.6 kΩ
RLOW = 47.5 kΩ
RLOW = 42.2 kΩ
RLOW = 37.4 kΩ
RLOW = 33.2 kΩ
RLOW = 29.4 kΩ
RLOW = 25.5 kΩ
RLOW = 22.1 kΩ
RLOW = 19.1 kΩ
RLOW = 16.5 kΩ
RLOW = 14.3 kΩ
RLOW = 12.1 kΩ
RLOW = 10 kΩ
1.1033
1.0224
0.9436
0.8695
0.7975
0.7303
0.6657
0.5953
0.5303
0.4699
0.415
VBP = 2.93 V,
RHIGH = 100 kΩ
MODE, VSEL, and ADDR
detection voltage
VDETECT_TH
V
0.3666
0.3163
0.2664
0.2138
0.1708
0.1299
0.0898
0.0512
GND
RLOW = 7.87 kΩ
RLOW = 6.19 kΩ
RLOW = 4.64 kΩ
RLOW = 3.16 kΩ
RLOW = 1.78 kΩ
RLOW = 0 Ω
(2) Correlated with close loop EVM measurement at load current of 30 A.
Copyright © 2016–2017, Texas Instruments Incorporated
7
TPS549D22
ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
www.ti.com.cn
Electrical Characteristics (continued)
over operating free-air temperature range, VVDD = 12 V, VEN_UVLO = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
SOFT START
RMODE_LOW = 60.4 kΩ
7
3.6
1.6
0.8
8(3)
4(4)
2
10
5.2
2.8
1.6
VOUT rising from 0 V to
95% of final set point,
RMODE_HIGH = 100 kΩ
RMODE_LOW = 53.6 kΩ
RMODE_LOW = 47.5 kΩ
RMODE_LOW = 42.2 kΩ
tSS
Soft-start time
ms
1
POWER-ON DELAY
Delay from enable to switching POD[2:0] = 000
Delay from enable to switching POD[2:0] = 001
Delay from enable to switching POD[2:0] = 010
Delay from enable to switching POD[2:0] = 011
Delay from enable to switching POD[2:0] = 100
Delay from enable to switching POD[2:0] = 101
Delay from enable to switching POD[2:0] = 110
Delay from enable to switching POD[2:0] = 111
256
512
µs
1.024
2.048
4.096
8.192
16.384
32.768
tPODLY
Power-on delay time
ms
PGOOD COMPARATOR
PGOOD in from higher
105
89
108
92
111
95
PGOOD in from lower
VPGTH
PGOOD threshold
%VREF
PGOOD out to higher
120
PGOOD out to lower
68
IPG
PGOOD sink current
PGOOD delay time
VPGOOD = 0.5 V
6.9
mA
µs
Delay for PGOOD going in, PGD[2:0] = 000
Delay for PGOOD going in, PGD[2:0] = 001
Delay for PGOOD going in, PGD[2:0] = 010
Delay for PGOOD going in, PGD[2:0] = 011
Delay for PGOOD going in, PGD[2:0] = 100
Delay for PGOOD going in, PGD[2:0] = 101
Delay for PGOOD going in, PGD[2:0] = 110
Delay for PGOOD going in, PGD[2:0] = 111
Delay for PGOOD coming out
256
512
1.024
2.048
4.096
8.192
16.384
131
tPGDLY
ms
2
1
µs
IPGLK
PGOOD leakage current
VPGOOD = 5 V
–1
0
μA
CURRENT DETECTION
VILM
VILIM voltage range
On-resistance (RDS(on)) sensing
RLIM = 130 kΩ
0.1
1.2
V
A
40
±10%(5)
30
OC tolerance
RLIM = 97.6 kΩ
OC tolerance
A
A
IOCL_VA
Valley current limit threshold
±15%(5)
RLIM = 64.9 kΩ
OC tolerance
20
±20%
–40
RLIM = 130 kΩ
Negative valley current limit
threshold
IOCL_VA_N
A
RLIM = 97.6 kΩ
RLIM = 64.9 kΩ
–30
–20
Clamp current at VLIM clamp
at lowest
ICLMP_LO
ICLMP_HI
VZC
VILIM_CLMP = 0.1 V, TA = 25°C
VILIM_CLMP = 1.2 V, TA = 25°C
6.25
A
Clamp current at VLIM clamp
at highest
75
0
A
Zero cross detection offset
mV
(3) In order to use the 8-ms SS setting, follow the steps outlined in Application Workaround to Support 4-ms and 8-ms SS Settings.
(4) In order to use the 4-ms SS setting, follow the steps outlined in Application Workaround to Support 4-ms and 8-ms SS Settings.
(5) Calculated from 20-A test data. Not production tested.
8
Copyright © 2016–2017, Texas Instruments Incorporated
TPS549D22
www.ti.com.cn
ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
Electrical Characteristics (continued)
over operating free-air temperature range, VVDD = 12 V, VEN_UVLO = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
PROTECTIONS AND OOB
Wake-up
3.32
3.11
V
VBPUVLO
BP UVLO threshold voltage
Shutdown
VOVP
OVP threshold voltage
OVP response time
OVP detect voltage
100-mV over drive
UVP detect voltage
117%
65%
120%
123%
1
VREF
µs
tOVPDLY
VUVP
tUVPDLY
VOOB
UVP threshold voltage
UVP delay filter delay time
OOB threshold voltage
68%
1
71%
VREF
ms
8%
16
24
38
67
VREF
ms
tSS = 1 ms
tSS = 2 ms
tSS = 4 ms
tSS = 8 ms
ms
tHICDLY
Hiccup blanking time
ms
ms
BP VOLTAGE
VBP
BP LDO output voltage
BP LDO dropout voltage
BP LDO overcurrent limit
VIN = 12 V, 0 A ≤ ILOAD ≤ 10 mA,
VIN = 4.5 V, ILOAD = 30 mA, TA = 25°C
VIN = 12 V, TA = 25°C
5.07
100
V
VBPDO
365
0.8
mV
mA
IBPMAX
PMB_CLK and PMB_DATA INPUT BUFFER LOGIC THRESHOLDS
PMB_CLK and PMB_DATA
VIL-PMBUS
V
V
low-level input voltage(1)
PMB_CLK and PMB_DATA
VIH-PMBUS
1.35
high-level input voltage(1)
PMB_CLK and PMB_DATA
VHY-PMBUS
150
165
mV
hysteresis voltage(1)
PMB_CLK and SMB_ALRT OUTPUT PULLDOWN
PMB_DATA and SMB_ALRT
VOL-PMBUS
ISINK = 20 mA
0.4
30
V
low-level output voltage(1)
THERMAL SHUTDOWN
Shutdown temperature
Hysteresis
155
Built-In thermal shutdown
TSDN
°C
threshold(1)
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6.6 Typical Characteristics
100
95
90
85
80
75
70
65
60
100
95
90
85
80
75
70
65
60
VIN = 1.5 V
VIN = 12 V
VIN = 16 V
VIN = 1.5 V
VIN = 12 V
VIN = 16 V
0
4
8
12
16
20
24
28
32
36
40
0
4
8
12
16
20
24
28
32
36
40
Load Current (A)
Load Current (A)
D001
D001
VOUT = 1 V
VDD = 5 V
SKIP Mode
fSW = 650 kHz
VOUT = 1 V
VDD = 5 V
FCCM
fSW = 650 kHz
Figure 1. Efficiency vs Output Current
Figure 2. Efficiency vs Output Current
100
95
90
85
80
75
70
65
60
100
95
90
85
80
75
70
65
60
VIN = 8 V
VIN = 12 V
VIN = 16 V
VIN = 8 V
VIN = 12 V
VIN = 16 V
0
3
6
9
12
15
18
21
24
27
30
0
3
6
9
12
15
18
21
24
27
30
Load Current (A)
Load Current (A)
D001
D001
VOUT = 5.5 V
VDD = 5 V
SKIP Mode
fSW = 425 kHz
VOUT = 5.5 V
VDD = 5 V
FCCM
fSW = 425 kHz
Figure 3. Efficiency vs Output Current
Figure 4. Efficiency vs Output Current
VIN = 12 V
VOUT = 1 V
fSW = 650 kHz
IOUT = 40 A
VIN = 12 V
VOUT = 1 V
fSW = 650 kHz
IOUT = 40 A
Natural convection
Airflow = 200 LFM
Figure 5. Thermal Image
Figure 6. Thermal Image
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Typical Characteristics (continued)
VIN = 12 V
VOUT = 1 V
fSW = 650 kHz
IOUT = 40 A
VIN = 12 V
fSW = 425 kHz
IOUT = 30 A
Airflow = 400 LFM
VOUT = 5.5 V
Natural convection
Figure 7. Thermal Image
Figure 8. Thermal Image
VIN = 12 V
fSW = 425 kHz
IOUT = 30 A
VIN = 12 V
fSW = 425 kHz
IOUT = 30 A
VOUT = 5.5 V
Airflow = 200 LFM
VOUT = 5.5 V
Airflow = 400 LFM
Figure 9. Thermal Image
Figure 10. Thermal Image
VOUT = 1 V
VIN = 12 V
2.5 A/µs
VOUT = 5.5 V
VIN = 12 V
2.5 A/µs
IOUT from 8 A to 32 A
IOUT from 6 A to 24 A
Figure 11. Transient Response Peak-to-Peak
Figure 12. Transient Response Peak-to-Peak
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Typical Characteristics (continued)
1 – Operation only
2 – Turn off
4 – Vout Command up to 1.2 V
5 – Vout Command down to 0.6 V
6 – Turn off
3 – Turn on without Margin
Figure 13. PMBus 1-MHz Bus Speed with 1.8-V Pullup
Figure 14. 6 Sequenced Events – I2C Write
1 – Operation only
2 – Turn off
4 – Vout Command up to 1.2 V
5 – Vout Command down to 0.6 V
6 – Turn off
1 – Operation only
4 – Vout Command up to 1.2 V
5 – Vout Command down to 0.6 V
6 – Turn off
2 – Turn off
3 – Turn on without Margin
3 – Turn on without Margin
Figure 15. 6 Sequenced Events – I2C Write/Read
Figure 16. 6 Sequenced Events – I2C Write/Read with PEC
1 – Operation only
4 – 16 Vout Command up to 1.2 V,
50 mV per step down to 0.6 V
17 – Turn off
1 – Operation only
4 – 16 Vout Command up to 1.2 V,
50 mV per step down to 0.6 V
17 – Turn off
2 – Turn off
2 – Turn off
3 – Turn on without Margin
3 – Turn on without Margin
Figure 17. 17 Sequenced Events – I2C Write
Figure 18. 17 Sequenced Events – I2C Write/Read
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Typical Characteristics (continued)
1 – Operation only
2 – Turn off
4 – 16 Vout Command up to 1.2 V,
1 – Operation only
4 – 16 Vout Command up to 1.2 V,
50 mV per step down to 0.6 V
50 mV per step down to 0.6 V
17 – Turn off
2 – Turn off
3 – Turn on without Margin
3 – Turn on without Margin
17 – 28 Vout Command from 0.6 V
to 1.2 V, 50 mV per step
29 – Turn off
Figure 20. 29 Sequenced Events – I2C Write
Figure 19. 17 Sequenced Events – I2C Write/Read with PEC
1 – Operation only
2 – Turn off
4 – 16 Vout Command up to 1.2 V,
50 mV per step down to 0.6 V
1 – Operation only
4 – 16 Vout Command up to 1.2 V,
50 mV per step down to 0.6 V
2 – Turn off
3 – Turn on without Margin
17 – 28 Vout Command from 0.6 V
to 1.2 V, 50 mV per step
29 – Turn off
3 – Turn on without Margin
17 – 28 Vout Command from 0.6 V
to 1.2 V, 50 mV per step
29 – Turn off
Figure 21. 29 Sequenced Events – I2C Write/Read
Figure 22. 29 Sequenced Events – I2C Write/Read with PEC
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7 Detailed Description
7.1 Overview
TPS549D22 device is a high-efficiency, single channel, FET-integrated, synchronous buck converter. It is
suitable for point-of-load applications with 40 A or lower output current in storage, telecom, and similar digital
applications. The device features proprietary D-CAP3 mode control combined with adaptive on-time architecture.
This combination is ideal for building modern high/low duty ratio, ultra-fast load step response DC-DC converters.
TPS549D22 device has integrated MOSFETs rated at 40-A TDC.
The converter input voltage range is from 1.5 V up to 16 V, and the VDD input voltage range is from 4.5 V to
22 V. The output voltage ranges from 0.6 V to 5.5 V.
Stable operation with all ceramic output capacitors is supported, since the D-CAP3 mode uses emulated current
information to control the modulation. An advantage of this control scheme is that it does not require phase
compensation network outside which makes it easy to use and also enables low external component count.
Adaptive on-time control tracks the preset switching frequency over a wide range of input and output voltage
while increasing switching frequency as needed during load-step transient.
The default preset switching frequency for this device is 650 kHz. Switching frequency is also programmable
from 8 preset values via PMBus interface. TPS549D22 supports digital communication via PMBus using
standard interfacing pins, PMB_CLK, PMB_DATA and SMB_ALRT#. The detailed PMBus features, capabilities
and command sets of the TPS549D22 can be found in the PMBus Programming section.
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7.2 Functional Block Diagram
External
Soft start
RESV_
TRK
MUX
Internal
Soft Start
Vref-32%
CNTL
RSN
PGOOD
+
Vref+8/16%
Vref-8/16%
+
-
UV
-
Delay
Control
+
+
-
OV
+
-
PVIN
RSP
Vref+20%
BOOT
+
-
PWM
+
+
D-CAP3TM
Ramp Generator
vout
Vref
VOSNS
VSEL
Reference
Generator
XCON
PMB_CLK
Adjustment/
Margining
SW
PMBus
Interface
PMB_DATA
tON
One-
Shot
SMB_ALRT#
ADDR
Control Logic
Address
Detector
BP
+
ZC
-
x(1/16)
x(-1/16)
ILIM
PGND
AGND
+
LS
OCP
-
LDO
VDD
Regulator
MODE
Logic
MODE
DRGND
Copyright © 2016, Texas Instruments Incorporated
7.3 Feature Description
7.3.1 40-A FET
The TPS549D22 device is a high-performance, integrated FET converter supporting current rating up to 40 A
thermally. It integrates two N-channel NexFET™ power MOSFETs, enabling high power density and small PCB
layout area. The drain-to-source breakdown voltage for these FETs is 25 V DC and 27 V transient for 10 ns.
Avalanche breakdown occurs if the absolute maximum voltage rating exceeds 27 V. In order to limit the switch
node ringing of the device, it is recommended to add a R-C snubber from the SW node to the PGND pins. Refer
to the Layout Guidelines section for the detailed recommendations.
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Feature Description (continued)
7.3.2 On-Resistance
The typical on-resistance (RDS(on)) for the high-side MOSFET is 2.9 mΩ and typical on-resistance for the low-side
MOSFET is 1.2 mΩ with a nominal gate voltage (VGS) of 5 V.
7.3.3 Package Size, Efficiency and Thermal Performance
The TPS549D22 device is available in a 7 mm × 5 mm, LQFN-CLIP package with 40 power and I/O pins. It
employs TI proprietary MCM packaging technology with thermal pad. With a properly designed system layout,
applications achieve optimized safe operating area (SOA) performance. The curves shown in Figure 23 and
Figure 24 are based on the orderable evaluation module design. (See SLUUBG4 to order the EVM).
110
100
90
110
100
90
80
80
70
70
60
60
50
50
100 LFM
100 LFM
200 LFM
400 LFM
200 LFM
400 LFM
40
40
Natural convection
Natural convection
30
30
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
Output Current (A)
Output Current (A)
D001
D001
VIN = 12 V
VOUT = 1 V
fSW = 650 kHz
VIN = 12 V
VOUT = 5.5 V
fSW = 425 kHz
Figure 23. Safe Operating Area
Figure 24. Safe Operating Area
7.3.4 Soft-Start Operation
In the TPS549D22 device the soft-start time controls the inrush current required to charge the output capacitor
bank during startup. The device offers selectable soft-start options of 1 ms, 2 ms, 4 ms and 8 ms. When the
device is enabled (either by EN or VDD UVLO), the reference voltage ramps from 0 V to the final level defined by
VSEL pin strap configuration, in a given soft-start time. The TPS549D22 device supports several soft-start times
between 1msec and 8msec selected by MODE pin configuration. Refer to MODE definition table for details.
7.3.5 VDD Supply Undervoltage Lockout (UVLO) Protection
The TPS549D22 device provides fixed VDD undervoltage lockout threshold and hysteresis. The typical VDD
turn-on threshold is 4.25 V and hysteresis is 0.2 V. The VDD UVLO can be used in conjunction with the
EN_UVLO signal to provide proper power sequence to the converter design. UVLO is a non-latched protection.
7.3.6 EN_UVLO Pin Functionality
The EN_UVLO pin drives an input buffer with accurate threshold and can be used to program the exact required
turn-on and turn-off thresholds for switcher enable, VDD UVLO or VIN UVLO (if VIN and VDD are tied together).
If desired, an external resistor divider can be used to set and program the turn-on threshold for VDD or VIN
UVLO.
Figure 25 shows how to program the input voltage UVLO using the EN_UVLO pin.
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Feature Description (continued)
PVIN
29
28
26 25 24 23 22 21
PGND 20
PGND 19
PGND 18
PGND 17
PGND 16
PGND 15
PGND 14
PGND 13
TPS549D22
4
PVIN
Copyright © 2016, Texas Instruments Incorporated
Figure 25. Programming the UVLO Voltage
7.3.7 Fault Protections
This section describes positive and negative overcurrent limits, overvoltage protections, out-of-bounds limits,
undervoltage protections and over temperature protections.
7.3.7.1 Current Limit (ILIM) Functionality
240
210
180
150
120
90
60
30
0
0
10
20
30
40
50
60
70
80
OCP Valley Current (A)
D001
Figure 26. Current Limit Resistance vs OCP Valley Overcurrent Limit
The ILIM pin sets the OCP level. Connect the ILIM pin to GND through the voltage setting resistor, RILIM. In order
to provide both good accuracy and cost effective solution, TPS549D22 device supports temperature
compensated internal MOSFET RDS(on) sensing.
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Feature Description (continued)
Also, the TPS549D22 device performs both positive and negative inductor current limiting with the same
magnitudes. The positive current limit normally protects the inductor from saturation that causes damage to the
high-side FET and low-side FET. The negative current limit protects the low-side FET during OVP discharge.
The voltage between GND pin and SW pin during the OFF time monitors the inductor current. The current limit
has 3000 ppm/°C temperature slope to compensate the temperature dependency of the on-resistance (RDS(on)).
The GND pin is used as the positive current sensing node.
TPS549D22 device uses cycle-by-cycle over-current limiting control. The inductor current is monitored during the
OFF state and the controller maintains the OFF state during the period that the inductor current is larger than the
overcurrent ILIM level. VILIM sets the valley level of the inductor current.
7.3.7.2 VDD Undervoltage Lockout (UVLO)
The TPS549D22 device has an UVLO protection function for the VDD supply input. The on-threshold voltage is
4.25 V with 200 mV of hysteresis. During a UVLO condition, the device is disabled regardless of the EN_UVLO
pin voltage. The supply voltage (VVDD) must be above the on-threshold to begin the pin strap detection.
7.3.7.3 Overvoltage Protection (OVP) and Undervoltage Protection (UVP)
The device monitors a feedback voltage to detect overvoltage and undervoltage. When the feedback voltage
becomes lower than 68% of the target voltage, the UVP comparator output goes high and an internal UVP delay
counter begins counting. After 1 ms, the device latches OFF both high-side and low-side MOSFETs drivers. The
UVP function enables after soft-start is complete.
When the feedback voltage becomes higher than 120% of the target voltage, the OVP comparator output goes
high and the circuit latches OFF the high-side MOSFET driver and turns on the low-side MOSFET until reaching
a negative current limit. Upon reaching the negative current limit, the low-side FET is turned off and the high-side
FET is turned on again for a minimum on-time. The TPS549D22 device operates in this cycle until the output
voltage is pulled down under the UVP threshold voltage for 1 ms. After the 1-ms UVP delay time, the high-side
FET is latched off and low-side FET is latched on. The fault is cleared with a reset of VDD or by retoggling the
EN pin.
Table 1. Overvoltage Protection Details
REFERENCE
VOLTAGE
OPERATING
OVP
THRESHOLD
OVP DELAY
100 mV OD
(µs)
SOFT-START STARTUP OVP
OVP RESET
RAMP
THRESHOLD
(VREF
)
1.2 × Internal
VREF
1.2 × Internal
VREF
Internal
Internal
1
UVP
7.3.7.4 Out-of-Bounds Operation
The device has an out-of-bounds (OOB) overvoltage protection that protects the output load at a much lower
overvoltage threshold of 8% above the target voltage. OOB protection does not trigger an overvoltage fault, so
the device is not latched off after an OOB event. OOB protection operates as an early no-fault overvoltage-
protection mechanism. During the OOB operation, the controller operates in forced PWM mode only by turning
on the low-side FET. Turning on the low-side FET beyond the zero inductor current quickly discharges the output
capacitor thus causing the output voltage to fall quickly toward the setpoint. During the operation, the cycle-by-
cycle negative current limit is also activated to ensure the safe operation of the internal FETs.
7.3.7.5 Overtemperature Protection
TPS549D22 device has overtemperature protection (OTP) by monitoring the die temperature. If the temperature
exceeds the threshold value (default value 165°C), TPS549D22 device is shut off. When the temperature falls
about 25°C below the threshold value, the device turns on again. The OTP is a non-latch protection.
18
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7.4 Device Functional Modes
7.4.1 DCAP3 Control Topology
The TPS549D22 employs an artificial ramp generator that stabilizes the loop. The ramp amplitude is
automatically adjusted as a function of selected switching frequency (fSW) The ramp amplitude is a function of
duty cycle (VOUT-to-VIN ratio). Consequently, two additional pin-strap bits (ADDR[2:1]) are provided for fine tuning
the internal ramp amplitude. The device uses an improved DCAP3 control loop architecture that incorporates a
steady-state error integrator. The slow integrator improves the output voltage DC accuracy greatly and presents
minimal impact to small signal transient response. To further enhance the small signal stability of the control
loop, the device uses a modified ramp generator that supports a wider range of output LC stage.
7.4.2 DCAP Control Topology
For advanced users of this device, the internal DCAP3 ramp can be disabled using the MODE[4] pin strap bit.
This situation requires an external RCC network to ensure control loop stability. Place this RCC network across
the output inductor. Use a range between 10 mV and 15 mV of injected RSP pin ripple. If no feedback resistor
divider network is used, insert a 10-kΩ resistor between the VOUT pin and the RSP pin.
7.5 Programming
7.5.1 Programmable Pin-Strap Settings
ADDR, VSEL and MODE. Description: a 1% or better 100-kΩ resistor is needed from BP to each of the three
pins. The bottom resistor from each pin to ground (see MODE, VSEL, ADDR DETECTION section of the
Electrical Characteristics table) in conjunction with the top resistor defines each pin strap selection. The pin
detection checks for external resistor divider ratio during initial power up (VDD is brought down below
approximately 3 V) when BP LDO output is at approximately 2.9 V.
7.5.1.1 Address Selection (ADDR) Pin
The TPS549D22 allows up to 16 different chip addresses for PMBus communication with the first 3 bits fixed as
001. The address selection process is defined by resistor divider ratio from BP pin to ADDR pin, and the address
detection circuit will start to work only after the initial power up when VDD has risen above its UVLO threshold.
lists all combinations of the address selections. The 1% or better tolerance resistors with typical temperature
coefficient of ±100ppm/°C are recommended.
ADDR pin strap configuration also programs the light load conduction mode.
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Programming (continued)
7.5.1.2 VSEL Pin
VSEL pin strap configuration is used to program initial boot voltage value, hiccup mode and latch off mode. The
initial boot voltage is used to program the main loop voltage reference point. VSEL voltage settings provide TI
designated discrete internal reference voltages. Table 2 lists internal reference voltage selections.
Table 2. Internal Reference Voltage Selections
(1)
VSEL[4]
VSEL[3]
VSEL[2]
VSEL[1]
VSEL[0]
1: Latch-Off
0: Hiccup
RVSEL (kΩ)
Open
187
1111: 0.975 V
1: Latch-Off
0: Hiccup
165
1110: 1.1992 V
1101: 1.1504 V
1100: 1.0996 V
1011: 1.0508 V
1010: 1.0000 V
1001: 0.9492 V
1000: 0.9023 V
0111: 0.9004 V
0110: 0.8496 V
0101: 0.8008 V
0100: 0.7500 V
0011: 0.6992 V
0010: 0.6504 V
0001: 0.5996 V
0000: 0.975 V
147
1: Latch-Off
0: Hiccup
133
121
1: Latch-Off
0: Hiccup
110
100
1: Latch-Off
0: Hiccup
90.9
82.5
75
1: Latch-Off
0: Hiccup
68.1
60.4
53.6
47.5
42.2
37.4
33.2
29.4
25.5
22.1
19.1
16.5
14.3
12.1
10
1: Latch-Off
0: Hiccup
1: Latch-Off
0: Hiccup
1: Latch-Off
0: Hiccup
1: Latch-Off
0: Hiccup
1: Latch-Off
0: Hiccup
1: Latch-Off
0: Hiccup
1: Latch-Off
0: Hiccup
1: Latch-Off
0: Hiccup
7.87
6.19
4.64
3.16
1.78
0
1: Latch-Off
0: Hiccup
1: Latch-Off
0: Hiccup
(1) 1% or better and connect to ground
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7.5.1.3 DCAP3 Control and Mode Selection
The MODE pinstrap configuration programs the control topology and internal soft-start timing selections. The
TPS549D22 device supports both DCAP3 and DCAP operation
MODE[4] selection bit is used to set the control topology. If MODE[4] bit is “0”, it selects DCAP operation. If
MODE[4] bit is “1”, it selects DCAP3 operation.
MODE[1] and MODE[0] selection bits are used to set the internal soft-start timing
Table 3. Allowable MODE Pin Selections
(1)
MODE[4]
MODE[3]
MODE[2]
MODE[1]
MODE[0]
RMODE (kΩ)
60.4
11: 8 ms(2)
10: 4 ms(2)
01: 2 ms
53.6
1: DCAP3
47.5
00: 1 ms
42.2
0: Internal
Reference
0: Internal SS
11: 8 ms(2)
10: 4 ms(2)
01: 2 ms
4.64
3.16
0: DCAP
1.78
00: 1 ms
0
(1) 1% or better and connect to ground
(2) See Application Workaround to Support 4-ms and 8-ms SS Settings.
7.5.1.4 Application Workaround to Support 4-ms and 8-ms SS Settings
In order to properly design for 4-ms and 8-ms SS settings, additional application consideration is needed. The
recommended application workaround to support the 4-ms and 8-ms soft-start settings is to ensure sufficient time
delay between the VDD and EN_UVLO signals. The minimum delay between the rising maximum VDD_UVLO
level and the minimum turnon threshold of EN_UVLO is at least TDELAY_MIN
.
TDELAY_MIN = K × VREF
where
•
•
•
K = 9 ms/V for SS setting of 4 ms
K = 18 ms/V for SS setting of 8 ms
VREF is the internal reference voltage programmed by VSEL pin strap
(1)
For example, if SS setting is 4 ms and VREF = 1 V, program the minimum delay at least 9 ms; if SS setting is 8
ms, the minimum delay should be programmed at least 18 ms. See Figure 27 and Figure 28 for detailed timing
requirement. Because TPS549D22 is a PMBus device, the end user has the option of programming power-on
delay (POD) as another workaround. Be sure to follow the same calculation to determine the required POD (see
MFR_SPECIFIC_01 (address = D1h) and Table 25 for more information).
Figure 27. Proper Sequencing of VDD and EN_UVLO to Support the Use of 4-ms SS Setting
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VDD
VDD_UVLO
Maximum Threshold
4.34 V
EN_UVLO
EN_UVLO
Minimum ON Threshold 1.45 V
Minimum
TDELAY_MIN
Figure 28. Minimum Delay Between VDD and EN_UVLO to Support the Use of 4-ms and 8-ms SS settings
The workaround/consideration described previously is not required for SS settings of 1 ms and 2 ms.
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7.5.2 Programmable Analog Configurations
7.5.2.1 RSP/RSN Remote Sensing Functionality
RSP and RSN pins are used for remote sensing purpose. In the case where feedback resistors are required for
output voltage programming, the RSP pin should be connected to the mid-point of the resistor divider and the
RSN pin should always be connected to the load return. In the case where feedback resistors are not required as
when the VSEL programs the output voltage set point, the RSP pin should be connected to the positive sensing
point of the load and the RSN pin should always be connected to the load return.
RSP and RSN pins are extremely high-impedance input terminals of the true differential remote sense amplifier.
The feedback resistor divider should use resistor values much less than 100 kΩ.
7.5.2.1.1 Output Differential Remote Sensing Amplifier
The examples in this section show simplified remote sensing circuitry where each example uses an internal
reference of 1 V. Figure 29 shows remote sensing without feedback resistors, with an output voltage set point of
1 V. Figure 30 shows remote sensing using feedback resistors, with an output voltage set point of 5 V.
sp
TPS549D22
TPS549D22
38 RSN
38 RSN
39 RSP
39 RSP
40 VOSNS
40 VOSNS
BOOT
BOOT
5
5
Load
Load
+
œ
+
œ
Copyright © 2016, Texas Instruments Incorporated
Copyright © 2016, Texas Instruments Incorporated
Figure 29. Remote Sensing Without Feedback
Resistors
Figure 30. Remote Sensing With Feedback
Resistors
7.5.2.2 Power Good (PGOOD Pin) Functionality
The TPS549D22 device has power-good output that registers high when switcher output is within the target. The
power-good function is activated after soft-start has finished. When the soft-start ramp reaches 300 mV above
the internal reference voltage, SSend signal goes high to enable the PGOOD detection function. If the output
voltage becomes within ±8% of the target value, internal comparators detect power-good state and the power
good signal becomes high after a 1-ms programmable delay. If the output voltage goes outside of ±16% of the
target value, the power good signal becomes low after two microsecond (2-µs) internal delay. The open-drain
power-good output must be pulled up externally. The internal N-channel MOSFET does not pull down until the
VDD supply is above 1.2 V.
Copyright © 2016–2017, Texas Instruments Incorporated
23
TPS549D22
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www.ti.com.cn
7.5.3 PMBus Programming
TPS549D22 has seven internal custom user-accessible 8-bit registers. The PMBus interface has been designed
for program flexibility, supporting direct format for write operation. Read operations are supported for both
combined format and stop separated format. While there is no auto increment/decrement capability in the
TPS549D22 PMBus logic, a tight software loop can be designed to randomly access the next register
independent of which register was accessed first. The start and stop commands frame the data packet and the
repeat start condition is allowed when necessary.
7.5.3.1 TPS549D22 Limitations to the PMBUS Specifications
TPS549D22 only recognizes seven bit addressing. This means TPS549D22 is not compatible with ten bit
addressing and CBUS communication. The device can operate in standard mode (100 kbit/s), fast mode (400
kbit/s) or faster mode (1000 kbit/s).
7.5.3.2 Slave Address Assignment
The seven bit slave address is 001A3A2A1A0x, where A3A2A1A0 is set by the ADDR pin on the device. Bit 0 is the
data direction bit, i.e. 001A3A2A1A00 is used for write operation and 001A3A2A1A01 is used for read operation.
7.5.3.3 PMBUS Address Selection
TPS549D22 allows up to 16 different chip addresses for PMBus communication, with the first three bits fixed as
001. The address selection process is defined by the resistor divider ratio from BP pin to ADDR pin, and the
address detection circuit will start to work only after VDD input supply has risen above its UVLO threshold.
Table 4 lists the divider ratio and some example resistor values. The 1% tolerance resistors with typical
temperature coefficient of ±100 ppm/ºC are recommended. Higher performance resistors can be used if tighter
noise margin is required for more reliable address detection.
7.5.3.4 Supported Formats
The supported formats are described in the following subsections.
7.5.3.4.1 Direct Format — Write
The simplest format for a PMBus write is direct format. After the start condition [S], the slave chip address is
sent, followed by an eighth bit indicating a write. TPS549D22 then acknowledges that it is being addressed, and
the master responds with an 8 bit register address byte. The slave acknowledges and the master sends the
appropriate 8 bit data byte. Once again the slave acknowledges and the master terminates the transfer with the
stop condition [P].
7.5.3.4.2 Combined Format — Read
After the start condition [S], the slave chip address is sent, followed by an eighth bit indicating a write.
TPS549D22 then acknowledges that it is being addressed, and the master responds with an 8 bit register
address byte. The slave acknowledges and the master sends the repeated start condition [Sr]. Once again, the
slave chip address is sent, followed by an eighth bit indicating a read. The slave responds with an acknowledge
followed by previously addressed 8 bit data byte. The master then sends a non-acknowledge (NACK) and finally
terminates the transfer with the stop condition [P].
7.5.3.5 Stop Separated Reads
Stop-separated reads can also be used. This format allows a master to set up the register address pointer for a
read and return to that slave at a later time to read the data. In this format the slave chip address followed by a
write bit are sent after a start [S] condition. TPS549D22 then acknowledges it is being addressed, and the master
responds with the 8-bit register address byte. The master then sends a stop or restart condition and may then
address another slave. After performing other tasks, the master can send a start or restart condition to the
TPS549D22 with a read command. The device acknowledges this request and returns the data from the register
location that had been set up previously.
24
Copyright © 2016–2017, Texas Instruments Incorporated
TPS549D22
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ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
Table 4. ADDR Pin Selection Table
RADDR (kΩ)
PMBus_Address<3:0>
CM
(1% or better and
connect to ground)
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
1: FCCM
0: SKIP
Open
187
165
147
133
121
110
100
90.9
82.5
75
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
68.1
60.4
53.6
47.5
42.2
37.4
33.2
29.4
25.5
22.1
19.1
16.5
14.3
12.1
10
7.87
6.19
4.64
3.16
1.78
0
Copyright © 2016–2017, Texas Instruments Incorporated
25
TPS549D22
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7.5.3.6 Supported PMBUS Commands and Registers
Only the following PMBus commands are supported by TPS549D22, and not all parts of each command are
supported.
Table 5. PMBUS Command and Register Table
No. of DATA
BYTES
CMD CODE
COMMAND NAME
DESCRIPTION
NVM?
TYPE
BIT PATTERN
00XX XX00 = Turn Off
1000 XX00 = Turn on (VOUT Margin off)
1001 0100 = Turn on (VOUT Margin Low, Ignore
Fault)
1001 1000 = Turn on (VOUT Margin Low, Act on
Fault)
1010 0100 = Turn on (VOUT Margin High,
Ignore Fault)
1010 1000 = Turn on (VOUT Margin High, Act
on Fault)
The OPERATION command is
used to turn the unit on and off
in conjunction with the input
from the EN pin. It is also used
to cause the device to set the
output voltage to the upper or
lower Margin voltages.
1h
OPERATION
no
R/W Byte
1
0001 0011 = Act on neither OPERATION nor EN
Configures the combination of
EN pin input and serial bus
commands needed to turn the
unit on and off. This includes
how the unit responds when
power is applied.
pin
0001 0111 = Act on EN pin and ignore
OPERATION
0001 1011 = Act on OPERATION and ignore EN
pin
0001 1111 = Act on OPERATION and Act on EN
pin (requires both)
2h
ON_OFF_CONFIG
yes
R/W Byte
1
Clears all fault status registers
to 0x00 and deasserts
SMBAlert. The "Unit is Off" bit
in the status byte and
"PGOOD# de-assertion" bit in
the status word are not cleared
when this command is issued.
3h
CLEAR_FAULTS
no
Send Byte
R/W Byte
0
1
No data. Write only.
1000 0000 Only allow WRITE_PROTECT
0100 0000 Only allow WRITE_PROTECT and
OPERATION
0010 0000 Only allow WRITE_PROTECT,
OPERATION, ON_OFF_CONFIG and
VOUT_COMMAND
Prevents unwanted writes to
the device. This register can be
over-written. This is not a
permanent lock.
10h
WRITE_PROTECT
yes
0000 0000 Allow all writes
Copies Operating Memory to
matching non-volatile Default
Store Memory.
11h
12h
STORE_DEFAULT_ALL
no
no
Send Byte
Send Byte
0
0
No data. Write only.
No data. Write only.
Restores all parameters from
non-volatile Default Store
RESTORE_DEFAULT_ALL
Memory to Operating Memory
This command provides a way
for a host system to determine
some key capabilities of a
PMBus device, including PEC,
Alert and Speed.
19h
CAPABILITY
no
Read Byte
1
1101 0000 = PEC, 1MHz bus speed, ALERT
000x xxxx = Linear format.
0001 0111 = Exponent value of -9 (1.953mV
resolution)
Hard coded to linear mode with
exponent of -9.
20h
21h
VOUT_MODE
no
Read Byte
R/W Word
1
2
Output voltage setpoint. DAC
resolution is 1.9531mV and
range is ~0.6V to ~1.200V
0000 0001 0011 0011 = 0.5996V
0000 0010 0110 0110 = 1.1992V
VOUT_COMMAND
yes
Sets the voltage to which the
output is to be changed when
the OPERATION command is
set to "MARGIN HIGH".
0000 0001 0011 0011 = 0.5996V
0000 0010 0110 0110 = 1.1992V
25h
26h
VOUT_MARGIN_HIGH
VOUT_MARGIN_LOW
no
no
R/W Word
R/W Word
2
2
Sets the voltage to which the
output is to be changed when
the OPERATION command is
set to "MARGIN LOW".
0000 0001 0011 0011 = 0.5996V
0000 0010 0110 0110 = 1.1992V
Status of all fault conditions in a
data byte.
78h
79h
STATUS_BYTE
STATUS_WORD
no
no
Read Byte
Read Word
1
2
See Status Word Table
See Status Word Table
Status of all fault conditions in
two data bytes.
Returns one byte of information
relating to the status of the
output voltage related faults.
7Ah
7Bh
STATUS_VOUT
STATUS_OUT
no
no
Read Byte
Read Byte
1
1
See Status Vout Table
See Status Iout Table
Returns one byte of information
relating to the status of the
output current related faults.
26
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CMD CODE
ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
Table 5. PMBUS Command and Register Table (continued)
No. of DATA
BYTES
COMMAND NAME
DESCRIPTION
NVM?
TYPE
BIT PATTERN
XXX0 0000
0XX0 0000 = A valid or supported command has
been received
1XX0 0000 = An invalid or unsupported
command has been received
X0X0 0000 = A valid or supported data has been
received
Status of communications, logic
and memory in a data byte
7Eh
STATUS_CML
no
Read Byte
1
X1X0 0000 = An invalid or unsupported data has
been received
XX00 0000 = Packet error check has failed
XX10 0000 = Packet error check has succeeded
Customer programmable byte
that does not affect chip
functionality
D0h
D1h
D2h
D3h
MFR_SPECIFIC_00
MFR_SPECIFIC_01
MFR_SPECIFIC_02
MFR_SPECIFIC_03
yes
yes
yes
yes
R/W Byte
R/W Byte
R/W Byte
R/W Byte
1
1
1
1
Program PGOOD delay and
Power-On delay
Read SST, CM, HICLOFF, TRK
and SEQ. Program Forced
SKIP Soft Start.
Program Fsw and control
mode, Read RC ramp
Free format
D4h
D6h
MFR_SPECIFIC_04
MFR_SPECIFIC_06
Program the DCAP3 offset
yes
yes
R/W Byte
R/W Byte
1
1
Program the VDD UVLO level
Program the final tracking set
point and select
pseudo/external tracking
D7h
FCh
MFR_SPECIFIC_07
MFR_SPECIFIC_44
yes
no
R/W Byte
1
2
Read TI PMBUS GUI Devcie ID
and IC revision code
Read Word
spacer
spacer
Figure 31. Startup and VOUT_COMMAND Timing Diagram
Copyright © 2016–2017, Texas Instruments Incorporated
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Table 6. Status Word Summary Table
BITS
Low 7
Low 6
Low 5
Low 4
Low 3
NAME
not used
MEANING
not used
OFF
Unit is not providing power to the output
Output overvoltage
VOUT_OV_FAULT
IOUT_OC_FAULT
VDD_UV_FAULT
Output overcurremt
Input VDD undervoltage
Internal die temperature. Over
temperature fault
Low 2
TEMP
Low 1
Low 0
High 7
High 6
High 5
High 4
High 3
High 2
High 1
High 0
CML
OTHER
Communications, logic or memory fault
None of the above in the PMBUS spec
Any output voltage fault or warning
Any output current fault or warning
Input VDD undervoltage
Not used
VOUT
IOUT
VDD_UV_FAULT
not used
PGOOD#
not used
not used
not used
Power good de-asserted
not used
not used
not used
Table 7. Status VOUT Summary Table
BITS
NAME
MEANING
7
6
5
4
3
2
1
OVF
Over voltage fault
OVW
UVW
Over voltage warning
Under voltage warning
Under voltage fault
not used
UVF
not used
not used
not used
not used
not used
Table 8. Status IOUT Summary Table
BITS
NAME
MEANING
7
OCF
Over current fault
Over current and output undervoltage
fault
6
OCUVF
5
4
3
2
1
0
not used
UCF
not used
Negative over current limit
not used
not used
not used
not used
not used
not used
not used
not used
28
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ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
7.5.4 Register Maps
7.5.4.1 OPERATION Register (address = 1h)
Figure 32. OPERATION
7
6
0
5
4
3
2
1
0
0
0
On_OFF
R/W
OPMARGIN<3:0>
R/W
R/W
R
R
RLEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9. OPERATION
Bit
7
Field
Type
R/W
R
Reset
Description
0: Turn off switching converter (if CMD=1)
1: Turn on switching converter (if CMD=1), and also enable
VOUT Margin function
ON_OFF
0
0
6
00xx: Turn off VOUT Margin function
0101: Turn on VOUT Margin Low and Ignore Fault
0110: Turn on VOUT Margin Low and Act On Fault
1001: Turn on VOUT Margin High and Ignore Fault
1010: Turn on VOUT Margin High and Act On Fault
5:2
OPMARGIN<3:0>
R/W
0
1
0
R
R
0
0
7.5.4.2 ON_OFF_CONFIG Register (address = 2h)
Figure 33. ON_OFF_CONFIG
7
0
6
0
5
0
4
3
2
1
1
0
1
1
CMD
R/W
CP
R/W
R
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 10. ON_OFF_CONFIG
Bit
7
Field
Type
R
Reset
Description
0
0
0
1
6
R
5
R
4
R
0: Ignore ON_OFF bit
1: Act on ON_OFF bit
3
2
CMD
CP
R/W
R/W
0
1
0: Ignore ON_OFF bit
1: Act on ON_OFF bit
1
0
R
R
1
1
7.5.4.3 CLEAR FAULTS (address = 3h)
The CLEAR_FAULTS command is used to clear any fault bits that have been set. This command simultaneously
clears all bits in all status registers. At the same time, the device clears its SMB_ALERT# signal output if the
device is asserting the SMB_ALERT# signal.
The CLEAR_FAULTS command does not cause a unit that has latched off for a fault condition to restart. If the
fault is still present when the bit is cleared, the fault bit shall immediately be set again and the host notified by the
usual means.
Copyright © 2016–2017, Texas Instruments Incorporated
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7.5.4.4 WRITE PROTECT (address = 10h)
Figure 34. WRITE PROTECT
7
0
6
0
5
0
4
0
3
0
2
0
1
0
0
0
R/W
R/W
R/W
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 11. WRITE PROTECT
Bit
Field
Type
Reset
Description
00000000: Enable writes to ALL commands
00100000: Enable writes to only WRITE_PROTECT,
OPERATION and ON_OFF_CONFIG and VOUT_COMMAND
commands
7:0
WRITE_PROTECT
R/W
0
01000000: Enable writes to only WRITE_PROTECT and
OPERATION
10000000: Enable writes to only WRITE_PROTECT
7.5.4.5 STORE_DEFAULT_ALL (address = 11h)
Store all of the current storable register settings in the EEPROM memory as the new defaults on power up.
It is permitted to use the STORE_DEFAULT_ALL command while the device is operating. However, the device
may be unresponsive during the write operation with unpredictable memory storage results. TI recommends to
turn the device output off before issuing this command.
EEPROM programming faults will set the ‘CML’ bit in the STATUS_BYTE and the ‘MEM’ bit in the STATUS_CML
registers.
7.5.4.6 RESTORE_DEFAULT_ALL (address = 12h)
Write EEPROM data to those CSRs that: (1) have EEPROM support, and; (2) are unprotected according to
current setting of WRITE_PROTECT.
It is permitted to use the RESTORE_DEFAULT_ALL command while the device is operating. However, the
device may be unresponsive during the copy operation with unpredictable, undesirable or even catastrophic
results. TI recommends to turn the device output off before issuing this command.
No data bytes are sent, just the command code is sent.
7.5.4.7 CAPABILITY (address = 19h)
This command provides a way for a host system to determine some key capabilities of this PMBus device.
Figure 35. CAPABILITY
7
PEC=1
R
6
5
4
ALRT=1
R
3
0
2
0
1
0
0
0
SPEED <1:0>
R
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 12. CAPABILITY
Bit
7
Field
Type
R
Reset
1
Description
1: Packet Error Checking is supported
10: Maximum supported bus speed is 1 MHz
PEC=1
6:5
SPEED <1:0>
R
10b
TPS549D22 has an ALERT# pin and it supports SMBus Alert Response
protocol
4
ALRT=1
R
1
3
2
1
0
R
R
R
R
0
0
0
0
30
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7.5.4.8 VOUT_MODE (address = 20h)
Figure 36. VOUT_MODE
7
6
MODE = 000
R
5
4
3
2
1
0
Exponent = 10111
R
R
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 13. VOUT_MODE
Bit
7:5
4:0
Field
Type
R
Reset
0
Description
000: Linear Format
10111: Exponent = −9 (equivalent of 1.9531 mV/LSB)
MODE = 000
Exponent
R
17h
7.5.4.9 VOUT_COMMAND (address = 21h)
The VOUT_COMMAND command sets the output voltage in volts. The exponent is set be VOUT_MODE at –9
(equivalent of 1.9531 mV/LSB). The programmed VOUT is computed as:
VOUT = VOUT_COMMAND x VOUT_MODE volts = VOUT_COMMAND x 2-9
V
(2)
The support range for TPS549D22 is: 0.5996 V to 1.1992 V. It is effectively 9-bits limited to 307 to 614 decimal.
Slew rate control is provided through MODE pin.
VOUT setps 1 step/tslew, where tslew is programmable by MODE pin: 4, 8, 16, or 32 µs.
Figure 37. VOUT_COMMAND
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Mantissa
R/W
R
R
R
R
R
R
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 14. VOUT_COMMAND
Bit
7:4
3:0
7:0
Field
Type
R
Reset
0000
Description
Mantissa
Mantissa
Mantissa
R/W
R/W
00xx
x = pin strap
xxxx xxxx
7.5.4.10 VOUT_MARGIN_HIGH (address = 25h)
The VOUT_MARGIN_HIGH command loads the TPS549D22 with the voltage to which the output is to be
changed when the OPERATION command is set to “Margin High”.
The data bytes are two bytes formatted according to the setting of the VOUT_MODE command.
The support margin range for TPS549D22 is: 0.5996 V to 1.1992 V. It is effectively 9-bits limited to 307 to 614
decimal. Slew rate control is provided through MODE pin.
Figure 38. VOUT_MARGIN_HIGH
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Mantissa
R/W
R
R
R
R
R
R
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 15. VOUT_MARGIN_HIGH
Bit
7:4
3:0
7:0
Field
Type
R
Reset
0000
Description
Mantissa
Mantissa
Mantissa
R/W
R/W
00xx
x = pin strap
xxxx xxxx
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7.5.4.11 VOUT_MARGIN_LOW (address = 26h)
The VOUT_MARGIN_LOW command loads the TPS549D22 with the voltage to which the output is to be
changed when the OPERATION command is set to “Margin Low”.
The data bytes are two bytes formatted according to the setting of the VOUT_MODE command.
The support margin range for TPS549D22 is: 0.5996 V to 1.1992 V. It is effectively 9-bits limited to 307 to 614
decimal. Slew rate control is provided through MODE pin.
Figure 39. VOUT_MARGIN_LOW:
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Mantissa
R/W
R
R
R
R
R
R
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 16. VOUT_MARGIN_LOW:
Bit
7:4
3:0
7:0
Field
Type
R
Reset
0000
Description
Mantissa
Mantissa
Mantissa
R/W
R/W
00xx
x = pin strap
xxxx xxxx
7.5.4.12 STATUS_BYTE (address = 78h)
Figure 40. STATUS_BYTE
7
Not used
R
6
OFF
R
5
VOUT_OV
R
4
IOUT_OC
R
3
VDD_UV
R
2
TEMP
R
1
0
CML
R
OTHER
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 17. STATUS_BYTE
Bit
Field
Type
Reset
Description
7
Not Used
R
N/A
Not Used
0: IC is on. This includes the following fault response conditions
where the output is still being actively driven, such as OVP and
OCF.
1: IC is off. This includes two conditions. One is unit is
commanded off via OPERATION/ON_OFF _CONFIG and the
other is unit is commanded on via
6
OFF
R
N/A
OPERATION/ON_OFF_CONFIG; but, due to fault response the
output has been tri-stated by UVF, OT and UVLO.
0: An output overvoltage fault has not occurred
1: An output overvoltage fault has occurred
5
4
3
2
1
0
VOUT_OV
IOUT_OC
VDD_UV
TEMP
R
R
R
R
R
R
N/A
N/A
N/A
N/A
N/A
N/A
0: An output overcurrent fault has not occurred
1: An output overcurrent fault has occurred
0: An input undervoltage fault has not occurred
1: An input undervoltage fault has occurred
0: A temperature fault or warning has not occurred
1: A temperature fault or warning has occurred
0: A communications, memory or logic fault has not occurred
1: A communications, memory or logic fault has occurred
CML
0: A fault or warning not listed above has not occurred
1: A fault of warning not listed above has occurred
OTHER
32
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ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
7.5.4.13 STATUS_WORD (High Byte) (address = 79h)
Figure 41. STATUS_WORD (High Byte)
7
VOUT
R
6
IOUT
R
5
VDD
R
4
Not Used
R
3
PGOOD#
R
2
1
Not Used
R
0
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 18. STATUS_WORD (High Byte)
Bit
Field
Type
Reset
Description
0: An output voltage fault or warning has not occurred
1: An output voltage fault or warning has occurred
7
VOUT
R
N/A
0: An output current fault has not occurred
1: An output current fault has occurred
6
IOUT
R
N/A
A VDD voltage fault has not occurred
1: A VDD voltage fault has occurred
5
4
VDD
R
R
N/A
N/A
Not Used
Not Used
0: PGOOD pin is at logic high
1: PGOOD pin is at logic high
3
PGOOD#
Not Used
R
R
N/A
N/A
2:0
Not used
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7.5.4.14 STATUS_VOUT (address = 7Ah)
Figure 42. STATUS_VOUT
7
OVF
R
6
OVW
R
5
UVW
R
4
UVF
R
3
2
1
0
Not Used
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 19. STATUS_VOUT
Bit
Field
Type
Reset
Description
0: An output overvoltage fault has not occurred
1: An output overvoltage fault has occurred
7
OVF
R
N/A
0: An output overvoltage warning has not occurred
1: An output overvoltage warning has occurred
6
5
OVW
UVW
R
R
N/A
N/A
0: An output undervoltage warning has not occurred
1: An output undervoltage warning has occurred
0: An output undervoltage fault has not occurred
1: An output undervoltage fault has occurred
4
UVF
R
R
N/A
N/A
3:0
Not Used
Not Used
7.5.4.15 STATUS_IOUT (address = 7Bh)
Figure 43. STATUS_IOUT
7
OCF
R
6
OCUVF
R
5
Not Used
R
4
UCF
R
3
2
1
0
Not Used
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 20. STATUS_IOUT
Bit
Field
Type
Reset
Description
0: An output positive overcurrent fault has not occurred
1: An output positive overcurrent fault has occurred
7
OCF
R
N/A
0: A simultaneous output positive overcurrent and undervoltage
fault has not occurred
1: A simultaneous output positive overcurrent and undervoltage
fault has occurred
6
OCUVF
R
N/A
5
4
Not Used
UCF
R
R
R
N/A
N/A
N/A
Not Used
0: An output negative overcurrent fault has not occurred
1: An output negative overcurrent fault has occurred
3:0
Not Used
Not Used
34
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7.5.4.16 STATUS_CML (address = 7Eh)
Figure 44. STATUS_CML
7
COMM
R
6
DATA
R
5
PEC
R
4
3
Not Used
R
2
1
OTH
R
0
Not Used
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 21. STATUS_CML
Bit
Field
Type
Reset
Description
0: A valid or supported command has been received
1: An invalid or unsupported command has been received
7
COMM
R
N/A
0: A valid or supported data has been received
1: An invalid or unsupported data has been received
6
DATA
R
N/A
0: Packet Error Check has failed
1: Packet Error Check has succeeded
5
PEC
R
R
N/A
N/A
4:2
Not Used
Not Used
0: A communication fault other than the ones listed in this table
has not occurred
1: A communication fault other than the ones listed in this table
has occurred. Currently, this bit is only set for too many data
bytes
1
0
OTH
R
R
N/A
N/A
Not Used
Not Used
7.5.4.17 MFR_SPECIFIC_00 (address = D0h)
Figure 45. MFR_SPECIFIC_00
7
6
5
4
3
2
1
0
USER SCRATCH PAD
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 22. MFR_SPECIFIC_00
Bit
Field
Type
Reset
Description
The MFR_SPECIFIC_00 is a user-accessible register dedicated
as a user scratch pad.
7:0
USER SCRATCH PAD
R/W
0
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7.5.4.18 MFR_SPECIFIC_01 (address = D1h)
Figure 46. MFR_SPECIFIC_01
7
0
6
0
5
4
3
2
1
0
PGD
R/W
POD
R/W
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 23. MFR_SPECIFIC_01
Bit
7:6
5:3
2:0
Field
Type
R
Reset
00b
Description
The MFR_SPECIFIC_01 is a user-accessible register dedicated
for configuring the PGOOD delay and Power-On Delay
functions. (Refer to Table 24 and Table 25)
PGD
POD
R/W
R/W
010b
010b
Table 24. PGD[2:0]
PGD[2]
PGD[1]
PGD[0]
PGood Delay
256 µs
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
512 µs
1.024 ms
2.048 ms
4.096 ms
8.192 ms
16.384 ms
131.072 ms
Table 25. POD[2:0]
POD[2]
POD[1]
POD[0]
Power-On Delay
256 µs
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
512 µs
1.024 ms
2.048 ms
4.096 ms
8.192 ms
16.384 ms
32.768 ms
36
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ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
7.5.4.19 MFR_SPECIFIC_02 (address = D2h)
The MFR_SPECIFIC_02 register allows the user to read the configuration of various pinstrap features and/or
overwrite them. Note, that any overwritten values here are only good until the next power-on-reset; when all
parameters will revert back to their pinstrap configurations.
Figure 47. MFR_SPECIFIC_02
7
6
5
0
4
3
2
1
0
TRK
R/W
SEQ
R/W
FORCESKIPSS
R/W
SST
R/W
HICLOFF
R/W
CM
R/W
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 26. MFR_SPECIFIC_02
Bit
Field
Type
Reset
Description
This bit indicates whether the device is using internal or external
reference voltage tracking. It will initially be loaded and reflect
the value of the pinstrap; but, can also be overwritten by PMBus.
0: No tracking. The device will use internal reference voltage.
1: External tracking.
7
TRK
R/W
P
This bit indicates whether the device is using internal or external
soft-start ramp. It will initially be loaded and reflect the value of
the pinstrap; but, can also be overwritten by PMBus.
0: No sequencing. The device will use the internal soft start
ramp.
6
5
4
SEQ
R/W
R
P
0
1
1: Sequencing
This bit (when set) allows the user to force Soft-start to always
use SKIP mode; regardless of the CM pinstrap.
0: CM bit controls whether to operate in SKIP or FCCM mode
during and after soft start.
FORCESKIPSS
R/W
1: Soft start is forced to operate in SKIP mode, then CM bit
controls the mode after soft start.
These bits indicate the time the device takes to ramp the output
voltage up to regulation (that is, soft-start). The field will initially
be loaded and reflect the value of the pinstrap; but, can also be
overwritten by PMBus. (Refer to Table 27)
3:2
SST
R/W
R/W
P
P
This bit indicates the response the device will take upon an
output under-voltage fault. There are two fault response options
which are enforced by the analog circuits: Hiccup or Latch-off.
The bit value will initially be loaded and reflect the value of the
pinstrap; but, can also be overwritten by PMBus.
0: Hiccup after UVP fault.
1
HICLOFF
1: Latch off after UVP fault.
This bit indicates the conduction mode for the device. The bit
value will initially be loaded and reflect the value of the pinstrap;
0
CM
R/W
P
but,
can
also
be
overwritten
by
PMBus.
0: SKIP
1: FCCM
Table 27. SST
SST[1]
SST[0]
Soft-start time
1 ms
0
0
1
1
0
1
0
1
2 ms
4 ms
8 ms
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7.5.4.20 MFR_SPECIFIC_03 (address = D3h)
The MFR_SPECIFIC_03 register allows the user to read the configuration of the DCAP pinstrap feature (and/or
overwrite it); as well configure the Ramp Generator and the PWM switching frequency.
Figure 48. MFR_SPECIFIC_03
7
6
0
5
4
3
0
2
1
0
DCAP3
R/W
RCSP
R/W
FS
R
R
R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 28. MFR_SPECIFIC_03 Field Descriptions
Bit
Field
Type
Reset
Description
This bit allows the user to read/configure the device’s internal
DCAP-3 mode. It will initially be loaded and reflect the value of
the pinstrap; but, can also be overwritten by PMBus.
0: Internal DCAP3 is disabled (ramp injection is off).
1: Internal DCAP3 is enabled (ramp injection is on)
7
DCAP3
R/W
P
6
R
0
These bits allow the user to read/configure the D-CAP3 ramp
generator’s resistor value selection. (Refer to Table 29)
5:4
3
RCSP
FS
R/W
R
P
0
These bits allow the user to read/configure the device’s PWM
switching frequency. (Refer to Table 30)
2:0
R/W
011b
Table 29. RCSP
RCSP[1]
RCSP[0]
Resistor Selection
Resistor ÷ 2
0
0
1
1
0
1
0
1
Resistor ÷ 1
Resistor × 2
Resistor × 3
Table 30. FS
FS[2]
FS[1]
FS[0]
Switching Frequency
315 kHz
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
425 kHz
550 kHz
650 KHz
825 KHz
900 KHz
1.025 KHz
1.225 MHz
38
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7.5.4.21 MFR_SPECIFIC_04 (address = D4h)
The MFR_SPECIFIC_04 register allows the user to configure the D-CAP offset reduction and fixed offset
correction.
Figure 49. MFR_SPECIFIC_04
7
6
5
4
0
3
0
2
0
1
0
0
0
DCAP3OffsetSel
R/W
DCAP3Offset[1:0]
R/W
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 31. MFR_SPECIFIC_04
Bit
Field
Type
Reset
Description
This bit allows the user to read/configure the D-CAP loop’s offset
reduction scheme.
0: Select DCAP loop manual offset reduction circuit.
1: Select DCAP loop automatic offset reduction circuit.
7
DCAP3OffsetSel
R/W
1
These bits allow the user to read/configure the D-CAP3 offset
correction if and only if DCAP3OffsetSel = 0 (refer to Table 32)
6:5
4:0
DCAP3Offset
R/W
R
0
0
Table 32. DCAP3OFFSET
Additional Offset Correction
Voltage Added
DCAP3Offset[1]
DCAP3Offset[0]
0
0
1
1
0
1
0
1
0 mV
+ 2 mV
+ 4 mV
+ 6 mV
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7.5.4.22 MFR_SPECIFIC_06 (address = D6h)
The MFR_SPECIFIC_06 is a user-accessible register dedicated for configuring the VDD Under-voltage LockOut
threshold.
Figure 50. MFR_SPECIFIC_06
7
0
6
0
5
0
4
0
3
0
2
1
0
VDDUVLO[2:0]
R/W
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 33. MFR_SPECIFIC_06
Bit
Field
Type
Reset
Description
7:3
R
0
These bits allow the user to read/configure the device’s VDD
Under-voltage Lockout threshold. (Refer to Table 34)
2:0
VDDUVLO
R/W
101b
Table 34. VDDUVLO
VDDUVLO[2]
VDDUVLO[1]
VDDUVLO[0]
VDD UVLO threshold
10.2 volts
0
1
1
1
1
X
0
0
1
1
X
0
1
0
1
2.8 volts
4.25 volts
6 volts
8.1 volts
40
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7.5.4.23 MFR_SPECIFIC_07 (address = D7h)
The MFR_SPECIFIC_07 is a user-accessible register dedicated for configuring the device’s PGOOD threshold
and external tracking options.
Figure 51. MFR_SPECIFIC_07
7
6
5
0
4
3
2
1
0
VPBAD
R/W
SPARE
R/W
TRKOPTION
R/W
VTRKIN[3:0]
R/W
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 35. MFR_SPECIFIC_07
Bit
Field
Type
Reset
Description
This bit allows the user to read/configure the PGOOD high and
low thresholds.
0: PGOOD high and low thresholds are +16% and -16%,
respectively
7
VPBAD
R/W
1
1: PGOOD high and low thresholds are +20% and -32%,
respectively
This bit allows the user to read/configure an EEPROM backed
SPARE bit and corresponding digital block output.
0: pSPARE = 0
6
5
SPARE
R/W
R
0
0
1: pSPARE = 1
This bit allows the user to read/control whether the external
TRKIN is enabled by a 425 mV threshold, or not.
0: TRKIN voltage must be above 425mV (that is, TRKINOK = 1)
before switcher can be enabled.
1: TRKIN voltage does not need to be above 425mV before
switcher can be enabled.
4
TRKOPTION
VTRKIN
R/W
R/W
0
These bits allow the user to read/configure the device’s final
TRKIN target voltage for external tracking operation. (Refer to
Table 36)
3:0
1111b
Table 36. VTRKIN
Final TRKIN target
voltage for
external tracking
operation
VTRKIN[3]
VTRKIN[2]
VTRKIN[1]
VTRKIN[0]
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
500 mV
550 mV
600 mV
650 mV
700 mV
750 mV
800 mV
850 mV
900 mV
950 mV
1.00 V
1.05 V
1.10 V
1.15 V
1.20 V
1.25 V
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7.5.4.24 MFR_SPECIFIC_44 (address = FCh)
The DEVICE_CODE command returns a 12-bit unique identifier code for the device and a 4 bit device revision
code. Device revisions codes should start at 0x0.
Figure 52. MFR_SPECIFIC_44
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Identifier Code
Revision Code
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 37. MFR_SPECIFIC_44
Bit
7:0
7:4
3:0
Field
Type
R
Reset
Description
02h
0
Identifier Code
Revision Code
0000 0010 0000b – Device ID Code Identifier for TPS549D22.
0000b - Revision Code (first silicon starts at 0)
R
R
0
42
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ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPS549D22 device is a highly-integrated synchronous step-down DC-DC converter with PMBus features
and capabilities. This devices is used to convert a higher DC input voltage to a lower DC output voltage, with a
maximum output current of 40 A. Use the following design procedure to select key component values for this
family of devices.
Copyright © 2016–2017, Texas Instruments Incorporated
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8.2 Typical Application: TPS549D22 1.5-V to 16-V Input, 1-V Output, 40-A Converter
J1
VIN
=
6V
-
16V
C1
DNP330uF
C2
22µF
C3
22µF
C4
22µF
C5
22µF
C6
22µF
C7
22µF
C8
22µF
C9
22µF
C10
2200pF
C11
100µF
C12
330uF
C13
22µF
C14
DNP
22uF
C15
DNP
22uF
C16
DNP
22uF
C17
DNP
22uF
C18
22uF
C19
22uF
C20
22µF
DNP
J2
PGND
R1
1.00
VDD
TP1
VOUT
I_OUT
=
=
1V
TP2
TP3
J3
R2
DNP
0
Remote Sense pos/neg should run as balanced pair
R3
DNP
0
40A MAX
TP5
SW
L1
21
6
TP4
PVIN
SW
22
23
24
25
26
7
250nH
PVIN
PVIN
PVIN
PVIN
PVIN
SW
SW
SW
SW
SW
SW
8
TP6
CHB
R4
0
C21
DNP
470pF
R6
200k
9
R5
DNP
1.50k
C22
0.1µF
10
11
12
C23
470µF
C24
470µF
R11
0
C25
100µF
C26
100µF
C27
100µF
C28
100µF
C29
100µF
C30
DNP
100uF
R7
0
TP19
CNTL/EN_UVLO
J4
TP7
CHA
C32
R8
DNP
1.10k
6800pF
R9
DNP
3.01
VDD
28
4
PGOOD
TP8 BP
VDD
5
R10
0
C31
DNP
0.1uF
BOOT
PGOOD
RSP
EN_UVLO
CNTL
R13
LOW
C33
100µF
R12
100k
35
39
38
27
C34
1uF
C35
1µF
DNP
100k
C36
DNP
1000pF
R14
DNP
0
3
2
1
C37
DNP
470uF
C38
470µF
PMB_CLK
PMB_DATA
SMB_ALRT#
CLK
DATA
ALERT
C39
100µF
C40
100µF
C41
100µF
C42
100µF
C43
DNP
100uF
PGND
R15
10.0k
RSN
BP
DRGND
34
31
32
33
36
37
40
MODE
MODE
BP
NC
R16
TP9
BP
13
14
15
16
17
18
19
20
29
30
41
J5
0
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
DRGND
AGND
PAD
ADDR
VSEL
C44
1uF
FSEL
VSEL
C45
4.7µF
DNP
TP10
TP11
R17
DNP
0
R18
DNP
0
TP12
ILIM
TP13
PGND
TP18
PGND
ILIM
TP14
RESV_TRK
VOSNS
DRGND
NT1
NT2
PGND
R19
137k
Net-Tie
Net-Tie
DNP
C46
U1
TPS549D22RVF
1000pF
AGND DRGND PGND AGND
PGND
DRGND
----- GND NET TIES -----
AGND
TP15
VSEL
TP16
MODE
TP17
ADDR
J6
TP20
CLK
TP21
DATA
TP22
ALERT
BP
1
3
5
7
9
2
4
6
8
10
R20
100k
R21
100k
R22
100k
PMBus
VSEL
MODE
FSEL
R23
37.4k
R24
42.2k
R25
0
AGND
AGND
Copyright © 2016, Texas Instruments Incorporated
Figure 53. Typical Application Schematic
44
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ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
8.2.1 Design Requirements
For this design example, use the input parameters shown in Table 38.
Table 38. Design Example Specifications
PARAMETER
Input voltage
VIN(ripple) Input ripple voltage
TEST CONDITION
MIN
TYP
MAX
16
UNIT
VIN
5
12
V
V
V
IOUT = 40 A
0.4
VOUT
Output voltage
1
Line regulation
5 V ≤ VIN ≤ 16 V
0 V ≤ IOUT ≤ 40 A
IOUT = 40 A
0.5%
0.5%
Load regulation
VPP
VOVER
VUNDER
IOUT
tSS
Output ripple voltage
Transient response overshoot
Transient response undershoot
Output current
20
90
90
mV
mV
mV
A
ISTEP = 24 A
ISTEP = 24 A
5 V ≤ VIN ≤ 16 V
VIN = 12 V
40
Soft-start time
Overcurrent trip point(1)
1
46
ms
A
IOC
η
Peak Efficiency
IOUT = 20 A, VIN = 12 V, VDD = 5 V
90%
650
fSW
Switching frequency
kHz
(1) DC overcurrent level
8.2.2 Detailed Design Procedure
8.2.2.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the TPS549D22 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
•
•
•
•
Run electrical simulations to see important waveforms and circuit performance
Run thermal simulations to understand board thermal performance
Export customized schematic and layout into popular CAD formats
Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
8.2.2.2 Switching Frequency Selection
The default switching frequency of the TPS549D22 device is 650 kHz. There are a total of 8 switching frequency
settings that can be programmed via PMBus interface. For each switching frequency setting, there are 4 internal
ramp compensations (DCAP3) to choose from, also via PMBus. When DCAP3 mode is selected (preferred), the
internal ramp compensation is used for stabilizing the converter design. The ramp is a function of the switching
frequency and duty cycle range (the output voltage to input voltage ratio). Table 39 summarizes the ramp
choices using these functions.
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Table 39. Switching Frequency Selection
VOUT RANGE
(FIXED VIN = 12 V)
DUTY CYCLE RANGE
SWITCHING FREQUENCY
SETTING
RAMP
SELECT
OPTION
TIME
CONSTANT
t (µs)
(VOUT/VIN) (%)
(fSW) (kHz)
MIN
0.6
0.9
1.5
2.5
0.6
0.9
1.5
2.5
0.6
0.9
1.5
2.5
0.6
0.9
1.5
2.5
MAX
0.9
1.5
2.5
5.5
0.9
1.5
2.5
5.5
0.9
1.5
2.5
5.5
0.9
1.5
2.5
5.5
MIN
5
MAX
7.5
R/2
9
R × 1
R × 2
R × 3
R/2
16.8
32.3
55.6
7
7.5
12.5
>21
5
12.5
21
315,
425
7.5
12.5
21
R × 1
R × 2
R × 3
R/2
13.5
25.9
44.5
5.6
7.5
12.5
>21
5
550,
650
7.5
12.5
21
R × 1
R × 2
R × 3
R/2
10.4
20
7.5
12.5
>21
5
825,
900
34.4
3.8
7.5
12.5
21
R × 1
R × 2
R × 3
7.1
7.5
12.5
>21
1.025,
1.225 MHz
13.6
23.3
8.2.2.3 Inductor Selection
To calculate the value of the output inductor, use Equation 3. The coefficient KIND represents the amount of
inductor ripple current relative to the maximum output current. The output capacitor filters the inductor ripple
current. Therefore, choosing a high inductor ripple current impacts the selection of the output capacitor since the
output capacitor must have a ripple current rating equal to or greater than the inductor ripple current. In general,
maintain a KIND coefficient between 0 and 15 for balanced performance. Using this target ripple current, the
required inductor size can be calculated as shown in Equation 3
6/54
6
F 6/54
1 6 × (1ꢀ 6 F 1 6ꢁ
).
,1 =
×
=
= 0ꢅ2ꢄ Jꢃ
:
;
1ꢀ 6 × ꢀꢂ0 ´ꢃ∫ × ꢄ0 ! × 0ꢅ1ꢂ
k6
× ¶37 o k)/54 ≠°∏ × +).$ o
:
;
:
;
). ≠°∏
(3)
Selecting a KIND of 0.15, the target inductance L1 = 250 nH. Using the next standard value, the 250 nH is chosen
in this application for its high current rating, low DCR, and small size. The inductor ripple current, RMS current,
and peak current can be calculated using Equation 4, Equation 5 and Equation 6. These values should be used
to select an inductor with approximately the target inductance value, and current ratings that allow normal
operation with some margin.
6
; F 6/54
6/54
× ¶37 o
1 6 × (1ꢀ 6 F 1 6ꢁ
:
). ≠°∏
)
=
×
=
= ꢂꢆꢀꢇ !
2)00,%
,1
1ꢀ 6 × ꢀꢂꢃ ´ꢄ∫ × ꢅꢂꢃ Æꢄ
k6
:
;
). ≠°∏
(4)
1
¨
)
=
()/54 ꢀ² +
× ()ꢁ)00,% ꢀ² = ꢂꢃ !
,(≤≠≥ ꢀ
12
(5)
(6)
1
)
= ()/54 ꢀ + × ()ꢁ)00,% ꢀ = ꢂ3 !
,(∞•°´ ꢀ
2
The Wurth ferrite 744309025 inductor is rated for 50 ARMS current, and 48-A saturation. Using this inductor, the
ripple current IRIPPLE= 5.64 A, the RMS inductor current IL(rms)= 40 A, and peak inductor current IL(peak)= 43 A.
8.2.2.4 Output Capacitor Selection
There are three primary considerations for selecting the value of the output capacitor. The output capacitor
affects three criteria:
•
Stability
46
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TPS549D22
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•
•
Regulator response to a change in load current or load transient
Output voltage ripple
These three considerations are important when designing regulators that must operate where the electrical
conditions are unpredictable. The output capacitance needs to be selected based on the most stringent of these
three criteria.
8.2.2.4.1 Minimum Output Capacitance to Ensure Stability
To prevent sub-harmonic multiple pulsing behavior, TPS549D22 application designs must strictly follow the small
signal stability considerations described in Equation 7.
¥
zR
6ꢀ%&
6/54
/.
#
>
×
×
/54 (≠©Æ )
2
,
/54
where
•
•
•
COUT(min) is the minimum output capacitance needed to meet the stability requirement of the design
tON is the on-time information based on the switching frequency and duty cycle (in this design, 133 ns)
τ is the ramp compensation time constant of the design based on the switching frequency and duty cycle, (in
this design, 13.45 µs, refer to Table 39)
•
•
•
LOUT is the output inductance (in the design, 0.25 µH)
VREF is the user-selected reference voltage level (in this design, 1 V)
VOUT is the output voltage (in this design, 1 V)
(7)
The minimum output capacitance calculated from Equation 7 is 28.6 µF. The stability is ensured when the
amount of the output capacitance is 28.6 µF or greater. And when all MLCCs (multi-layer ceramic capacitors) are
used, both DC and AC derating effects must be considered to ensure that the minimum output capacitance
requirement is met with sufficient margin.
8.2.2.4.2 Response to a Load Transient
The output capacitance must supply the load with the required current when current is not immediately provided
by the regulator. When the output capacitor supplies load current, the impedance of the capacitor greatly affects
the magnitude of voltage deviation (such as undershoot and overshoot) during the transient.
Use Equation 8 and Equation 9 to estimate the amount of capacitance needed for a given dynamic load step and
release.
NOTE
There are other factors that can impact the amount of output capacitance for a specific
design, such as ripple and stability.
2
6/54 × ¥37
,
/54
× k¿),/!$ ≠°∏ ;o × l
+ ¥/&& ≠©Æ ;p
:
:
6
:
;
). ≠©Æ
#
=
;
:
/54 ≠©Æ _µÆ§•≤
6
;ꢀ6
:
6
). ≠©Æ
2 × ¿6,/!$ ©Æ≥•≤¥ ; × Fl
/54 p × ¥37 ꢀ ¥/&& ≠©Æ ;G × 6
:
/54
:
:
;
). ≠©Æ
(8)
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,
× k¿),/!$ ≠°∏ ;o2
:
/54
#
=
;
:
/54 ≠©Æ _Ø∂•≤
2 × ¿6,/!$ ≤•¨•°≥• × 6
:
;
/54
where
•
•
•
•
•
•
•
•
•
•
COUT(min_under) is the minimum output capacitance to meet the undershoot requirement
COUT(min_over)is the minimum output capacitance to meet the overshoot requirement
L is the output inductance value (0.25 µH)
∆ILOAD(max) is the maximum transient step (24 A)
VOUT is the output voltage value (1 V)
tSW is the switching period (1.538 µs)
VIN(min) is the minimum input voltage for the design (10.8 V)
tOFF(min) is the minimum off time of the device (300 ns)
∆VLOAD(insert) is the undershoot requirement (30 mV)
∆VLOAD(release) is the overshoot requirement (30 mV)
(9)
Most of the above parameters can be found in Table 38.
The minimum output capacitance to meet the undershoot requirement is 969 µF. The minimum output
capacitance to meet the overshoot requirement is 2400 µF. This example uses a combination of POSCAP and
MLCC capacitors to meet the overshoot requirement.
•
•
POSCAP bank #1: 4 x 470 µF, 2.5 V, 6 mΩ per capacitor
MLCC bank #2: 10 × 100 µF, 2.5 V, 1 mΩ per capacitor with DC+AC derating factor of 60%
Recalculating the worst case overshoot using the described capacitor bank design, the overshoot is 29.0 mV
which meets the 30 mV overshoot specification requirement.
8.2.2.4.3 Output Voltage Ripple
The output voltage ripple is another important design consideration. Equation 10 calculates the minimum output
capacitance required to meet the output voltage ripple specification. This criterion is the requirement when the
impedance of the output capacitance is dominated by ESR.
ꢀRIPPLE
#
=
= 1ꢁ8 J&
/54 (≠©Æ )2ꢀ00,%
8 × ¶37 × 6/54 ≤©∞∞¨•
:
;
(10)
In this case, the maximum output voltage ripple is 10 mV. For this requirement, the minimum capacitance for
ripple requirement yields 108 µF. Because this capacitance value is significantly lower compared to that of
transient requirement, determine the capacitance bank from steps in the previous section Response to a Load
Transient. Because the output capacitor bank consists of both POSCAP and MLCC type capacitors, it is
important to consider the ripple effect at the switching frequency due to effective ESR. Use Equation 11 to
determine the maximum ESR of the output capacitor bank for the switching frequency.
)
2)00,%
6/54 ≤©∞∞¨•; F
:
ꢀ × ¶37 × #/54
%32-!8
=
= 1.ꢁ ≠3
)
2)00,%
(11)
Estimate the effective ESR at the switching frequency by obtaining the impedance vs. frequency characteristics
of the output capacitors. The parallel impedance of capacitor bank #1 and capacitor bank #2 at the switching
frequency of the design example is estimated to be 1.2 mΩ, which is less than that of the maximum ESR value.
Therefore, the output voltage ripple requirement (7 mV) can be met. For detailed calculation on the effective ESR
please contact the factory to obtain a user-friendly Excel based design tool.
48
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8.2.2.5 Input Capacitor Selection
The TPS549D22 devices require a high-quality, ceramic, type X5R or X7R, input decoupling capacitor with a
value of at least 1 μF of effective capacitance on the VDD pin, relative to AGND. The power stage input
decoupling capacitance (effective capacitance at the PVIN and PGND pins) must be sufficient to supply the high
switching currents demanded when the high-side MOSFET switches on, while providing minimal input voltage
ripple as a result. This effective capacitance includes any DC bias effects. The voltage rating of the input
capacitor must be greater than the maximum input voltage. The capacitor must also have a ripple current rating
greater than the maximum input current ripple to the device during full load. The input ripple current can be
calculated using Equation 12.
(6
; F 6/54 ꢀ
6/54
:
). ≠©Æ
)
= )/54 (≠°∏ ꢀ
×
×
= 1ꢁ !≤≠≥
¨
#). (≤≠≥ ꢀ
6
6
:
;
:
;
). ≠©Æ
). ≠©Æ
(12)
The minimum input capacitance and ESR values for a given input voltage ripple specification, VIN(ripple), are
shown in Equation 13 and Equation 14. The input ripple is composed of a capacitive portion, VRIPPLE(cap), and a
resistive portion, VRIPPLE(esr)
.
)
/54 (≠°∏ ꢀ × 6/54
× 6
;
). ≠°∏
#
=
= ꢁ8ꢂꢃ J&
).(≠©Æ ꢀ
62)00,%
× ¶
37
:
;
:
£°∞
(13)
(14)
VRIPPLE(ESR)
%32#). (≠°∏ ꢀ
=
= 7 ≠3
)
2)00,%
ꢁ
)
+ @
;
A
:
/54 ≠°∏
The value of a ceramic capacitor varies significantly over temperature and the amount of DC bias applied to the
capacitor. The capacitance variations due to temperature can be minimized by selecting a dielectric material that
is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power regulator capacitors
because they have a high capacitance to volume ratio and are fairly stable over temperature. The input capacitor
must also be selected with the DC bias taken into account. For this example design, a ceramic capacitor with at
least a 25-V voltage rating is required to support the maximum input voltage. For this design, allow 0.1-V input
ripple for VRIPPLE(cap), and 0.3-V input ripple for VRIPPLE(esr). Using Equation 13 and Equation 14, the minimum
input capacitance for this design is 38.5 µF, and the maximum ESR is 9.4 mΩ. For this example, four 22-μF, 25-
V ceramic capacitors and one additional 100-μF, 25-V low-ESR polymer capacitors in parallel were selected for
the power stage.
8.2.2.6 Bootstrap Capacitor Selection
A ceramic capacitor with a value of 0.1 μF must be connected between the BOOT and SW pins for proper
operation. It is recommended to use a ceramic capacitor with X5R or better grade dielectric. Use a capacitor with
a voltage rating of 25 V or higher.
8.2.2.7 BP Pin
Bypass the BP pin to DRGND with 4.7-µF of capacitance. In order for the regulator to function properly, it is
important that these capacitors be localized to the TPS549D22 , with low-impedance return paths. See Layout
Guidelines section for more information.
8.2.2.8 R-C Snubber and VIN Pin High-Frequency Bypass
Though it is possible to operate the TPS549D22 within absolute maximum ratings without ringing reduction
techniques, some designs may require external components to further reduce ringing levels. This example uses
two approaches: a high frequency power stage bypass capacitor on the VIN pins, and an R-C snubber between
the SW area and GND.
The high-frequency VIN bypass capacitor is a lossless ringing reduction technique which helps minimizes the
outboard parasitic inductances in the power stage, which store energy during the low-side MOSFET on-time, and
discharge once the high-side MOSFET is turned on. For this example twoone 2.2-nF, 25-V, 0603-sized high-
frequency capacitors are used. The placement of these capacitors is critical to its effectiveness. Its ideal
placement is shown in .
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Additionally, an R-C snubber circuit is added to this example. To balance efficiency and spike levels, a 1-nF
capacitor and a 1-Ω resistor are chosen. In this example a 0805-sized resistor is chosen, which is rated for 0.125
W, nearly twice the estimated power dissipation. See SLUP100 for more information about snubber circuits.
8.2.2.9 Optimize Reference Voltage (VSEL)
Optimize the reference voltage by choosing a value for RVSEL. The TPS549D22 device is designed with a wide
range of precision reference voltage support from 0.6 V to 1.2 V with an available step change of 50 mV.
Program these reference voltages using the VSEL pin strap configurations. See Table 2 for internal reference
voltage selections. In addition to providing initial boot voltage value, use the VSEL pin to program hiccup and
latch-off mode.
There are two ways to program the output voltage set point. If the output voltage setpoint is one of the 16
available reference and boot voltage options, no feedback resistors are required for output voltage programming.
In the case where feedback resistors are not needed, connect the RSP pin to the positive sensing point of the
load. Always connect the RSN pin to the load return sensing point.
In this design example, because the output voltage set point is 1 V, select RVSEL(LS) of either 75 kΩ (latch off) or
68.1 kΩ (hiccup) as shown in Table 3. If the output voltage set point is NOT one of the 16 available reference or
boot voltage options, feedback resistors are required for output voltage programming. Connect the RSP pin to
the mid-point of the resistor divider. Always connect the RSN pin to the load return sensing point as shown in
and .
The general guideline to select boot and internal reference voltage is to select the reference voltage closest to
the output voltage setpoint. In addition, because the RSP and RSN pins are extremely high-impedance input
terminals of the true differential remote sense amplifier, use a feedback resistor divider with values much less
than 100 kΩ.
8.2.2.10 MODE Pin Selection
MODE pin strap configuration is used to program control topology and internal soft-start timing selections.
TPS549D22 supports both DCAP3 and DCAP operation. For general POL applications, it is strongly
recommended to configure the control topology to be DCAP3 due to its simple to use and no external
compensation features. In the rare instance where DCAP is needed, an RCC network across the output inductor
is needed to generate sufficient ripple voltage on the RSP pin. In this design example, RMODE(LS) of 42.2 kΩ is
selected for DCAP3 and soft start time of 1 ms.
8.2.2.11 ADDR Pin Selection
ADDR pin strap configuration is used to program device address and light load conduction mode selection. The
TPS549D22 allows up to 16 different chip addresses for PMBus communication with the first 3 bits fixed as 001.
The address selection process is defined by resistor divider ratio from BP pin to ADDR pin, and the address
detection circuit will start to work only after the initial power up when VDD has risen above its UVLO threshold.
For this application example, a device address of 16d is desired. We select the low side RADDR to be 0 Ohm
considering the SKIP operation and device address of 16d. Table 4 lists all combinations of the address
selections. The 1% or better tolerance resistors with typical temperature coefficient of ±100ppm/°C are
recommended
8.2.2.12 Overcurrent Limit Design
The TPS549D22 device uses the ILIM pin to set the OCP level. Connect the ILIM pin to GND through the voltage
setting resistor, RILIM. In order to provide both good accuracy and cost effective solution, this device supports
temperature compensated MOSFET on-resistance (RDS(on)) sensing. Also, this device performs both positive and
negative inductor current limiting with the same magnitudes. Positive current limit is normally used to protect the
inductor from saturation therefore causing damage to the high-side and low-side FETs. Negative current limit is
used to protect the low-side FET during OVP discharge.
The inductor current is monitored by the voltage between PGND pin and SW pin during the OFF time. The ILIM
pin has 3000 ppm/°C temperature slope to compensate the temperature dependency of the on-resistance. The
PGND pin is used as the positive current sensing node.
50
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TPS549D22 has cycle-by-cycle over-current limiting control. The inductor current is monitored during the OFF
state and the controller maintains the OFF state during the period that the inductor current is larger than the
overcurrent ILIM level. The voltage on the ILIM pin (VILIM) sets the valley level of the inductor current. The range
of value of the RILIM resistor is between 21 kΩ and 237 kΩ. The range of valley OCL is between 6.25 A and 75 A
(typical). If the RILIM resistance is outside of the recommended range, OCL accuracy and function cannot be
ensured. (see Table 40)
Table 40. Closed Loop EVM Measurement of OCP Settings
OVERCURRENT PROTECTION VALLEY (A)
RILIM
(kΩ)
MIN
—
NOM
75
MAX
—
237
127
95.3
63.4
32.4
21
36
27
18
9
40
44
30
33
20
22
10
11
—
6.25
—
Use Equation 15 to relate the valley OCL to the RILIM resistance.
/#,6!,,%9 = 0.3178 × 2),)- F 0.304ꢀ
where
•
•
RILIM is in kΩ
OCLVALLEY is in A
(15)
In this design example, the desired valley OCL is 43 A, the calculated RILIM is 137 kΩ. Use Equation 16 to
calculate the DC OCL to be 46 A.
/#,$# = /#,6!,,%9 + 0.5 × )2)ꢀꢀ,%
where
•
•
RILIM is in kΩ
OCLDC is in A
(16)
In an overcurrent condition, the current to the load exceeds the inductor current and the output voltage falls.
When the output voltage crosses the under-voltage fault threshold for at least 1msec, the behavior of the device
depends on the VSEL pin strap setting. If hiccup mode is selected, the device will restart after 16-ms delay (1-ms
soft-start option). If the overcurrent condition persists, the OC hiccup behavior repeats. During latch-off mode
operation the device shuts down until the EN pin is toggled or VDD pin is power cycled.
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Figure 54. VOUT Command Graphic User Interface
52
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TPS549D22
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8.2.3 Application Curves
100
95
90
85
80
75
70
65
60
100
95
90
85
80
75
70
65
60
0
4
8
12
16
20
24
28
32
36
40
0
4
8
12
16
20
24
28
32
36
40
Load Current (A)
Load Current (A)
D001
D001
Skip Mode
VIN = 12 V
VDD = 5 V
fSW = 650 kHz
VOUT = 1 V
FCCM
fSW = 650 kHz
VOUT = 1 V
VIN = 12 V
VDD = 5 V
Figure 55. Efficiency vs. Load Current
Figure 56. Efficiency vs. Load Current
VIN=12 V
IOUT=0 A
VOUT=0.6 V to 1.2 V
Figure 58. VOUT Command: 0.6 V to 1.2 V, IOUT = 0 A
Figure 57. Transient Response Peak-to-Peak
VIN=12 V
IOUT=0 A
VOUT=1.2 V to 0.6 V
VIN=12 V
VOUT=0.6 V to 1.2 V
IOUT= 40 A
Figure 59. VOUT Command: 1.2 V to 0.6 V, IOUT = 0 A
Figure 60. VOUT Command: 0.6 V to 1.2 V, IOUT = 40 A
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VIN = 12 V
VOUT = 1 V
fSW = 650 kHz
IOUT = 40 A
VIN=12 V
VOUT=1.2 V to 0.6 V
Airflow = 200 LFM
IOUT=40 A
Figure 62. Thermal Image
Figure 61. VOUT Command: 1.2 V to 0.6 V, IOUT = 40 A
54
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9 Power Supply Recommendations
This device is designed to operate from an input voltage supply between 1.5 V and 16 V. Ensure the supply is
well regulated. Proper bypassing of input supplies and internal regulators is also critical for noise performance,
as is the quality of the PCB layout and grounding scheme. See the recommendations in the Layout section.
10 Layout
10.1 Layout Guidelines
Consider these layout guidelines before starting a layout work using TPS549D22.
•
It is absolutely critical that all GND pins, including AGND (pin 30), DRGND (pin 29), and PGND (pins 13, 14,
15, 16, 17, 18, 19, and 20) are connected directly to the thermal pad underneath the device via traces or
plane.
•
•
Include as many thermal vias as possible to support a 40-A thermal operation. For example, a total of 35
thermal vias are used (outer diameter of 20 mil) in the available for purchase at ti.com.
Placed the power components (including input/output capacitors, output inductor and device) on one side of
the PCB (solder side). Insert at least two inner layers (or planes) connected to the power ground, in order to
shield and isolate the small signal traces from noisy power lines.
•
Place the VIN pin decoupling capacitors as close as possible to the PVIN and PGND pins to minimize the
input AC current loop. Place a high-frequency decoupling capacitor (with a value between 1 nF and 0.1 µF)
as close to the PVIN pin and PGND pin as the spacing rule allows. This placement helps suppress the switch
node ringing.
•
•
Place VDD and BP decoupling capacitors as close to the device pins as possible. Do not use PVIN plane
connection for the VDD pin. Separate the VDD signal from the PVIN signal by using separate trace
connections. Provide GND vias for each decoupling capacitor and make the loop as small as possible.
Ensure that the PCB trace defined as switch node (which connects the SW pins and up-stream of the output
inductor) are as short and wide as possible. In the EVM design, the SW trace width is 200 mil. Use a
separate via or trace to connect SW node to snubber and bootstrap capacitor. Do not combine these
connections.
•
•
Place all sensitive analog traces and components (including VOSNS, RSP, RSN, ILIM, MODE, VSEL and
ADDR) far away from any high voltage switch node (itself and others), such as SW and BOOT to avoid noise
coupling. In addition, place MODE, VSEL and ADDR programming resistors near the device pins.
The RSP and RSN pins operate as inputs to a differential remote sense amplifier that operates with very high
impedance. It is essential to route the RSP and RSN pins as a pair of diff-traces in Kelvin-sense fashion.
Route them directly to either the load sense points (+ and –) or the output bulk capacitors. The internal circuit
uses the VOSNS pin for on-time adjustment. It is critical to tie the VOSNS pin directly tied to VOUT (load
sense point) for accurate output voltage result.
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10.2 Layout Example
图 63. EVM Top View
图 64. EVM Top Layer
图 65. EVM Inner Layer 1
图 66. EVM Inner Layer 2
56
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TPS549D22
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ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
Layout Example (接下页)
图 67. EVM Inner Layer 3
图 68. EVM Inner Layer 4
图 69. EVM Bottom Layer
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Layout Example (接下页)
10.2.1 Mounting and Thermal Profile Recommendation
Proper mounting technique adequately covers the exposed thermal tab with solder. Excessive heat during the
reflow process can affect electrical performance. 图 70 shows the recommended reflow oven thermal profile.
Proper post-assembly cleaning is also critical to device performance. See the Application Report, QFN/SON PCB
Attachment, (SLUA271) for more information.
tP
TP
TL
TS(max)
TS(min)
tL
rRAMP(up)
rRAMP(down)
tS
t25P
Time (s)
25
图 70. Recommended Reflow Oven Thermal Profile
表 41. Recommended Thermal Profile Parameters
PARAMETER
MIN
TYP
MAX
UNIT
RAMP UP AND RAMP DOWN
rRAMP(up)
Average ramp-up rate, TS(max) to TP
Average ramp-down rate, TP to TS(max)
3
6
°C/s
°C/s
rRAMP(down)
PRE-HEAT
TS
Pre-heat temperature
150
60
200
180
°C
s
tS
Pre-heat time, TS(min) to TS(max)
REFLOW
TL
TP
tL
Liquidus temperature
217
°C
°C
s
Peak temperature
260
150
40
Time maintained above liquidus temperature, TL
Time maintained within 5°C of peak temperature, TP
Total time from 25°C to peak temperature, TP
60
20
tP
s
t25P
480
s
58
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TPS549D22
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ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
11 器件和文档支持
11.1 器件支持
11.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.2 使用 WEBENCH® 工具定制设计方案
单击此处,使用 TPS549D22 器件并借助 WEBENCH® 电源设计器创建定制设计方案。
1. 在开始阶段键入输出电压 (VIN)、输出电压 (VOUT) 和输出电流 (IOUT) 要求。
2. 使用优化器拨盘优化关键设计参数,如效率、封装和成本。
3. 将生成的设计与德州仪器 (TI) 的其他解决方案进行比较。
WEBENCH Power Designer 提供一份定制原理图以及罗列实时价格和组件可用性的物料清单。
在多数情况下,可执行以下操作:
•
•
•
•
运行电气仿真,观察重要波形以及电路性能
运行热性能仿真,了解电路板热性能
将定制原理图和布局方案导出至常用 CAD 格式
打印设计方案的 PDF 报告并与同事共享
有关 WEBENCH 工具的详细信息,请访问 www.ti.com/WEBENCH。
11.3 接收文档更新通知
要接收文档更新通知,请导航至 TI.com 上的器件产品文件夹。单击右上角的通知我 进行注册,即可每周接收产品
信息更改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
11.4 社区资源
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范,
并且不一定反映 TI 的观点;请参阅 TI 的 《使用条款》。
TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在
e2e.ti.com 中,您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。
设计支持
TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。
11.5 商标
D-CAP3, Eco-mode, NexFET, E2E are trademarks of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
PMBus is a trademark of SMIF, Inc..
All other trademarks are the property of their respective owners.
11.6 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损
伤。
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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12 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。这些数据如有变更,恕不另行通知
和修订此文档。如欲获取此数据表的浏览器版本,请参阅左侧的导航。
60
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12.1 Package Option Addendum
12.1.1 Packaging Information
Package
Type
Package
Drawing
Package
Qty
Device
(1)
(2)
(4)
Orderable Device
Status
Pins
Eco Plan
Lead/Ball Finish(3)
MSL Peak Temp
Op Temp (°C)
Marking(5)(6)
TPS549D22
TPS549D22
TPS549D22RVFR
TPS549D22RVFT
ACTIVE
ACTIVE
LQFN-CLIP
LQFN-CLIP
RVF
RVF
40
40
2500
250
Pb-Free (RoHS Exempt)
Pb-Free (RoHS Exempt)
CU NIPDAU
CU NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
–40 to 125
–40 to 125
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PRE_PROD Unannounced device, not in production, not available for mass market, nor on the web, samples not available.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
space
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest
availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the
requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified
lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used
between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by
weight in homogeneous material)
space
(3) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the
finish value exceeds the maximum column width.
space
(4) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
space
(5) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device
space
(6) Multiple Device markings will be inside parentheses. Only on Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer: The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief
on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third
parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
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12.1.2 Tape and Reel Information
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
Reel
Diameter
(mm)
Reel
Width W1
(mm)
Package
Type
Package
Drawing
A0
(mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
(mm)
Pin1
Quadrant
Device
Pins
SPQ
LQFN-
CLIP
TPS549D22RVFR
TPS549D22RVFT
RVF
RVF
40
40
2500
250
330.0
178.0
16.4
16.4
5.35
5.35
7.35
7.35
1.7
1.7
8.0
8.0
16.0
16.0
Q3
Q3
LQFN-
CLIP
62
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ZHCSFC5A –AUGUST 2016–REVISED SEPTEMBER 2017
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
Device
Package Type
Package Drawing Pins
SPQ
2500
250
Length (mm) Width (mm)
Height (mm)
38.0
TPS549D22RVFR
TPS549D22RVFT
LQFN-CLIP
LQFN-CLIP
RVF
RVF
40
40
367.0
210.0
367.0
185.0
35.0
版权 © 2016–2017, Texas Instruments Incorporated
63
PACKAGE OPTION ADDENDUM
www.ti.com
19-Jun-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
2500
250
(1)
(2)
(3)
(4/5)
(6)
TPS549D22RVFR
TPS549D22RVFT
ACTIVE
LQFN-CLIP
LQFN-CLIP
RVF
40
40
RoHS-Exempt
& Green
NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 125
-40 to 125
TPS549D22
TPS549D22
ACTIVE
RVF
RoHS-Exempt
& Green
NIPDAU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
19-Jun-2021
Addendum-Page 2
PACKAGE OUTLINE
RVF0040A
LQFN-CLIP - 1.52 mm max height
S
C
A
L
E
2
.
0
0
0
PLASTIC QUAD FLATPACK - NO LEAD
5.1
4.9
A
B
PIN 1 INDEX AREA
7.1
6.9
C
1.52
1.32
SEATING PLANE
0.08 C
0.05
0.00
2X 3.5
(0.2) TYP
3.3 0.1
EXPOSED
THERMAL PAD
36X 0.5
13
20
12
21
41
SYMM
2X
5.3 0.1
5.5
32
1
0.3
40X
0.2
40
33
PIN 1 ID
(OPTIONAL)
0.1
C A B
SYMM
0.05
0.5
0.3
40X
4222989/B 10/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
4. Reference JEDEC registration MO-220.
www.ti.com
EXAMPLE BOARD LAYOUT
RVF0040A
LQFN-CLIP - 1.52 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(3.3)
6X (1.4)
40
33
40X (0.6)
1
32
40X (0.25)
2X
(1.12)
36X (0.5)
6X
(1.28)
(6.8)
(5.3)
41
SYMM
(R0.05) TYP
(
0.2) TYP
VIA
12
21
13
20
SYMM
(4.8)
LAND PATTERN EXAMPLE
SCALE:12X
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
SOLDER MASK
OPENING
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4222989/B 10/2017
NOTES: (continued)
5. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
www.ti.com
EXAMPLE STENCIL DESIGN
RVF0040A
LQFN-CLIP - 1.52 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
SYMM
(0.815) TYP
40
33
40X (0.6)
1
41
32
40X (0.25)
(1.28)
TYP
36X (0.5)
(0.64)
TYP
SYMM
(6.8)
(R0.05) TYP
8X
(1.08)
12
21
METAL
TYP
20
13
8X (1.43)
(4.8)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD
71% PRINTED SOLDER COVERAGE BY AREA
SCALE:18X
4222989/B 10/2017
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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TI 提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,不保证没
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