TPS563231 [TI]
4.5V 至 17V 输入、3A 同步降压稳压器;
| 型号： | TPS563231 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 4.5V 至 17V 输入、3A 同步降压稳压器 稳压器 |
| 文件： | 总25页 (文件大小：1099K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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TPS563231
ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
采用 SOT563 封装的 TPS563231 4.5V 至 17V 输入、3A 同步降压稳压器
1 特性
3 说明
1
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•
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3A 转换器集成了 95mΩ 和 55mΩ FET
TPS563231 是一款采用 SOT563 封装的简单易用型
3A 同步降压转换器。
D-CAP3™模式控制，用于快速瞬态响应
输入电压范围：4.5V 至 17V
输出电压范围：0.6V 至 7V
脉冲跳跃模式
该器件经过优化，最大限度地减少了运行所需的外部组
件并可实现低待机电流。
这些开关模式电源 (SMPS) 器件采用 D-CAP3 模式控
制，能够提供快速瞬态响应，并且在无需外部补偿组件
的情况下支持诸如高分子聚合物等低等效串联电阻
(ESR) 输出电容以及超低 ESR 陶瓷电容器。
600kHz 开关频率
低关断电流（小于 12µA）
2% 反馈电压精度 (25°C)
从预偏置输出电压中启动
逐周期过流限制
在轻载运行期间，TPS563231 在脉冲跳跃模式 (PSM)
下运行，从而保持高效率。TPS563231 采用 6 引脚
1.6mm × 1.6mm SOT563 (DRL) 封装，额定结温范围
为 –40°C 至 125°C。
断续模式过流保护
非锁存 UVP 和 TSD 保护
6 引脚 SOT563 封装
器件信息(1)
2 应用
器件型号
TPS563231
封装
封装尺寸（标称值）
•
•
•
•
•
数字电视电源
DRL (6)
1.60mm x 1.60mm
高清 蓝光™光盘播放器
网络家庭终端设备
数字机顶盒 (STB)
监控
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
简化原理图
TPS563231 效率
VIN
100
VIN
BST
CBST
CIN
L
90
80
70
60
50
VOUT
SW
FB
EN
RFBT
GND
COUT
RFBB
40
Vout=1.05V
30
20
Vout=1.8V
Vout=3.3V
Vout=5V
0.001
0.005
0.02 0.05 0.1 0.2
Iout(A)
0.5
1
2 3
12Vi
1
本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。 有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SLUSD65
TPS563231
ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
www.ti.com.cn
目录
7.4 Device Functional Modes........................................ 11
Application and Implementation ........................ 13
8.1 Application Information............................................ 13
8.2 Typical Application ................................................. 13
Power Supply Recommendations...................... 17
1
2
3
4
5
6
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 3
Pin Configuration and Functions......................... 4
Specifications......................................................... 5
6.1 Absolute Maximum Ratings ...................................... 5
6.2 ESD Ratings.............................................................. 5
6.3 Recommended Operating Conditions....................... 5
6.4 Thermal Information.................................................. 6
6.5 Electrical Characteristics........................................... 7
6.6 Typical Characteristics.............................................. 8
Detailed Description ............................................ 10
7.1 Overview ................................................................. 10
7.2 Functional Block Diagram ....................................... 10
7.3 Feature Description................................................. 10
8
9
10 Layout................................................................... 18
10.1 Layout Guidelines ................................................. 18
10.2 Layout Example .................................................... 18
11 器件和文档支持 ..................................................... 19
11.1 相关链接................................................................ 19
11.2 接收文档更新通知 ................................................. 19
11.3 社区资源................................................................ 19
11.4 商标....................................................................... 19
11.5 静电放电警告......................................................... 19
11.6 Glossary................................................................ 19
12 机械、封装和可订购信息....................................... 19
7
2
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TPS563231
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ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
4 修订历史记录
注：之前版本的页码可能与当前版本有所不同。
Changes from Revision A (January 2019) to Revision B
Page
•
•
Changed FB I/O Version from 'O' to 'I' ................................................................................................................................... 5
已更改 Function Block Diagram Pin number ........................................................................................................................ 10
Changes from Original (July 2018) to Revision A
Page
•
已更改 将销售状态从“预告信息”更改为“最终信息”。 .............................................................................................................. 1
Copyright © 2018–2019, Texas Instruments Incorporated
3
TPS563231
ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
www.ti.com.cn
5 Pin Configuration and Functions
DRL Package
6-Pin SOT563
Top View
1
VIN
SW
6
FB
EN
2
3
5
4
GND
BST
Pin Functions
PIN
I/O
DESCRIPTION
NAME
NO.
Supply input for the high-side NFET gate drive circuit. Connect 0.1 µF capacitor between
BST and SW pins.
BST
4
O
Enable input control. High = On, Low = Off. Can be connected to VIN. Do not float. Adjust
the input undervoltage lockout with EN resistor divider.
EN
5
6
3
I
I
FB
Converter feedback input. Connect to output voltage with feedback resistor divider.
Power ground terminals, connected to the source of low-side FET internally. Connect to
system ground, ground side of CIN and COUT. Path to CIN must as short as possible.
GND
—
SW
VIN
2
1
O
I
Switch node connection between high-side NFET and low-side NFET.
Input voltage supply pin. The drain terminal of high-side power NFET.
4
Copyright © 2018–2019, Texas Instruments Incorporated
TPS563231
www.ti.com.cn
ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–2
MAX
19
UNIT
V
VIN
BST
24.5
26.5
5.5
V
BST (10 ns transient)
V
BST to SW
V
Input voltage
FB
5.5
V
EN
VIN + 0.3
19
V
SW
V
SW (10 ns transient)
–3.5
21
V
Operating junction
TJ
–40
–55
150
150
°C
°C
temperature
Storage temperature
Tstg
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
17
UNIT
VIN
4.5
–0.1
–0.1
–0.1
–0.1
–1.8
V
BST
22
BST to SW
EN
5
Input voltage
VIN
4.5
17
V
FB
SW
Operating junction
temperature
TJ
–40
125
°C
Copyright © 2018–2019, Texas Instruments Incorporated
5
TPS563231
ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
www.ti.com.cn
6.4 Thermal Information
TPS56323x
DRL
THERMAL METRIC(1)
UNIT
6 PINS
135.8
45.5
θJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
θJC(top)
θJB
23.8
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
1.2
ψJB
24.0
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6
Copyright © 2018–2019, Texas Instruments Incorporated
TPS563231
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ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
6.5 Electrical Characteristics
TJ = –40°C to 125°C, VIN = 12 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
POWER SUPPLY (VIN PIN)
Operating – non-switching
supply current
IVIN
VEN = 5 V, VFB = 0.7 V
220
300
µA
µA
IVINSDN
Shutdown supply current
VEN = 0 V
2
4.0
3.6
0.4
12
Rising threshold
Falling threshold
Hysteresis
4.3
Undervoltage lockout
thresholds
VIN_UVLO
3.3
V
ENABLE (EN PIN)
VENH
VENL
REN
EN high-level input voltage
1.10
1.00
1.24
1.13
1000
1.42
1.30
V
V
EN low-level input voltage
EN pin resistance to GND
VEN = 12 V
kΩ
VOLTAGE REFERENCE (FB PIN)
VIN = 4.5 V to 17 V, TJ = 25 °C
VIN = 4.5 V to 17 V, TJ = –40°C to 125°C
VFB = 0.6 V
588
600
600
0
612
mV
mV
nA
VREF
Reference voltage
VFB input current
IFB
±100
MOSFET
RDSON_H
RDSON_L
High-side switch resistance
Low-side switch resistance
TJ = 25°C, VBST – VSW = 5V
TJ = 25°C
95
55
mΩ
mΩ
CURRENT LIMIT
Low side FET source current
limit
IOC_LS
IZC
3
3.9
0
4.8
A
A
Zero cross current detection
THERMAL SHUTDOWN
Thermal shutdown
Shutdown temperature
Hysteresis
160
25
TSDN
°C
threshold(1)
ON-TIME TIMER CONTROL
tON(MIN)
Minimum on time(1)
Minimum off time(1)
80
ns
ns
tOFF(MIN)
SOFT START
Tss
VFB = 0.5 V
250
Soft-start time
Internal soft-start time
VIN = 12 V, VOUT = 3.3 V, CCM mode
1.5
ms
FREQUENCY
Fsw
Switching frequency
600
kHz
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION
VUVP Output UVP falling threshold Hiccup detect
THICCUP_WAIT UVP propagation delay
THICCUP_RE Hiccup time before restart
65
0.8
24
%
ms
ms
(1) Not production tested.
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6.6 Typical Characteristics
VIN = 12 V (unless otherwise noted)
230
225
220
215
210
205
200
610
608
606
604
602
600
-50
-25
0
25
50
75
Temperature (°C)
100
125
150
-50
-25
0
25
50
75
Temperature (°C)
100
125
150
Iq-S
Vref
图 1. IQ vs Junction Temperature
图 2. VREF Voltage vs Junction Temperature
4.3
1.3
1.25
1.2
4.2
4.1
4
Rising
Falling
Rising
Falling
3.9
3.8
3.7
3.6
1.15
1.1
-50
-25
0
25
Temperature (°C)
50
75
100
125
150
-50
-25
0
25
Temperature (°C)
50
75
100
125
150
vin-
en-S
图 3. VIN UVLO vs Junction Temperature
图 4. EN Pin UVLO vs Junction Temperature
140
120
100
80
3.95
3.9
HS
LS
3.85
3.8
60
3.75
3.7
40
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
Temperature (°C)
50
75
100
125
150
Temperature(èC)
Ilim
rdso
图 6. RDS-ON vs Junction Temperature
图 5. Current Limit vs Junction Temperature
8
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ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
Typical Characteristics (接下页)
VIN = 12 V (unless otherwise noted)
100
100
90
80
70
60
50
40
30
20
90
80
70
60
50
40
30
20
10
0
Vin=5V
Vin=9V
Vin=12V
Vin=17V
Vin=5V
Vin=9V
Vin=12V
Vin=17V
0.001
0.005
0.02 0.05 0.1 0.2
Iout(A)
0.5
1
2
3
0.001
0.005
0.02 0.05 0.1 0.2
Iout(A)
0.5
1
2
3
1V05
1V8V
图 7. TPS563231 VOUT = 1.05 V Efficiency
图 8. TPS563231 VOUT = 1.8 V Efficiency
100
105
95
85
75
65
55
45
90
80
70
60
50
40
30
Vin=5V
Vin=9V
Vin=12V
Vin=17V
Vin=9V
Vin=12V
Vin=17V
0.001
0.005
0.02 0.05 0.1 0.2
Iout(A)
0.5
1
2
3
0.001
0.005
0.02 0.05 0.1 0.2
Iout(A)
0.5
1
2
3
3V3V
5Vo_
图 9. TPS563231 VOUT = 3.3 V Efficiency
图 10. TPS563231 VOUT = 5 V Efficiency
3.36
3.35
3.34
3.33
3.32
3.31
3.3
3.36
3.34
3.32
3.3
Vin=6V
Vin=9V
Vin=12V
Vin=17V
Iout=0A
Iout=1A
Iout=2A
Iout=3A
3.28
3.26
3.29
3.28
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Iout(A)
3
6
8
10
12
Vin(V)
14
16
18
3V3V
3V3V
图 11. TPS563231 VOUT = 3.3V Load Regulation
图 12. TPS563231 VOUT = 3.3 V Line Regulation
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TPS563231
ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
www.ti.com.cn
7 Detailed Description
7.1 Overview
The TPS563231 is 3-A synchronous step-down converter. The proprietary D-CAP3 mode control supports low
ESR output capacitors such as specialty polymer capacitors and multi-layer ceramic capacitors without complex
external compensation circuits. The fast transient response of D-CAP3 mode control can reduce the output
capacitance required to meet a specific level of performance.
7.2 Functional Block Diagram
EN
5
1
VIN
VUVP
+
UVP
Hiccup
VREG5
Control Logic
Regulator
UVLO
6
FB
BST
SW
4
2
+
+
PWM
Voltage
Reference
+
SS
Soft Start
HS
+
Internal Ramp
One-Shot
TSD
XCON
VREG5
LS
Ripple Injection
OCL
threshold
OCL
+
3
GND
+
ZC
7.3 Feature Description
7.3.1 Adaptive On-Time Control and PWM Operation
The main control loop of the TPS563231 is adaptive on-time pulse width modulation (PWM) controller that
supports a proprietary D-CAP3 mode control. The D-CAP3 mode control combines adaptive on-time control with
an internal compensation circuit for pseudo-fixed frequency and low external component count configuration with
both low-ESR and ceramic output capacitors. It is stable even with virtually no ripple at the output.
At the beginning of each cycle, the high-side MOSFET is turned on. This MOSFET is turned off after internal on-
shot timer expires. This one shot duration is set proportional to the converter output voltage, VOUT , and inversely
proportional to the input voltage, VIN, to maintain a pseudo-fixed frequency over the input voltage range, hence it
is called adaptive on-time control. The on-shot timer is reset and the high-side MOSFET is turned on again when
the feedback voltage falls below the reference voltage. An internal ramp is added to reference voltage to simulate
output ripple, eliminating the need for ESR induced output ripple from D-CAP3 mode control.
10
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Feature Description (接下页)
7.3.2 Soft Start and Pre-Biased Soft Start
The TPS563231 has an internal 1.5-ms soft-start. When the EN pin becomes high, the internal soft-start function
begins ramping up the reference voltage from 0 V to 0.6 V linearly.
If the output capacitor is pre-biased at startup, the devices initiate switching and start ramping up only after the
internal reference voltage becomes greater than the feedback voltage VFB. This scheme ensures that the
converters ramp up smoothly into regulation point.
7.3.3 Over Current and Short Circuit Protection
The TPS563231 is protected from over-current conditions by cycle-by-cycle current limit on the valley of the
inductor current. Hiccup mode will be activated if a fault condition persists to prevent over-heating.
The current going through low-side (LS) MOSFET is sensed and monitored. When the LS MOSFET turns on, the
inductor current begins to ramp down. The LS MOSFET will not be turned OFF if its current is above the LS
current limit ILS_LIMIT even the feedback voltage, VFB, drops below the reference voltage VREF. The LS MOSFET is
kept ON so that inductor current keeps ramping down, until the inductor current ramps below the LS current limit
ILS_LIMIT. Then the LS MOSFET is turned OFF and the HS switch is turned on after a dead time.
As the inductor current is limited by ILS_LIMT, the output voltage tends to drop as the inductor current may be
smaller than the load current. Hiccup current protection mode is activated once the VFB drops below the UVP
threshold after a delay time (800 µs typically). In hiccup mode, the regulator is shut down and kept off for 24 ms
typically before the TPS563231 try to start again. If over-current or short-circuit fault condition still exists, hiccup
will repeat until the fault condition is removed. Hiccup mode reduces power dissipation under severe over-current
conditions, prevents over-heating and potential damage to the device.
7.3.4 Undervoltage Lockout (UVLO) Protection
UVLO protection monitors the internal regulator voltage. When the voltage is lower than UVLO threshold voltage,
the device is shut off. This protection is non-latching.
7.3.5 Thermal Shutdown
The device monitors the temperature of itself. If the temperature exceeds the threshold value (typically 160°C),
the device is shut off. This is a non-latch protection.
7.4 Device Functional Modes
7.4.1 Shutdown Mode
The EN pin provides electrical ON and OFF control for the TPS563231. When VEN is below its threshold (1.13 V
typically), the device is in shutdown mode. The switching regulator is turned off and the quiescent current drops
to 2.0 µA typically. The TPS563231 also employs VIN under voltage lock out protection. If VIN voltage is below its
UVLO threshold (3.6 V typically), the regulator is turned off.
7.4.2 Continuous Conduction Mode (CCM)
Continuous Conduction Mode (CCM) operation is employed when the load current is higher than half of the
peak-to-peak inductor current. In CCM operation, the frequency of operation is pseud fixed, output voltage ripple
will be at a minimum in this mode and the maximum output current of 3-A can be supplied.
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Device Functional Modes (接下页)
7.4.3 Pulse Skip Mode (PSM, TPS563231)
The TPS563231 is designed with Advanced Eco-mode™ to maintain high light load efficiency. As the output
current decreases from heavy load condition, the inductor current is also reduced and eventually comes to point
that its rippled valley touches zero level, which is the boundary between continuous conduction mode (CCM) and
discontinuous conduction mode (DCM). The low-side MOSFET is turned off when the zero inductor current is
detected. As the load current further decreases the converter runs into discontinuous conduction mode. The on-
time is kept almost the same as it was in the continuous conduction mode so that it takes longer time to
discharge the output capacitor with smaller load current to the level of the reference voltage. This makes the
switching frequency lower, proportional to the load current, and keeps the light load efficiency high. The transition
point to the light load operation current IOUT_LL can be calculated in 公式 1.
(V - VOUT ) ì VOUT
1
IN
IOUT _LL
=
ì
2 ì L ì fSW
V
IN
(1)
As the load current continues to decrease, the switching frequency also decreases. The on-time starts to
decrease once the switching frequency is lower than 250 kHz. The on-time can be about 22% reduced at most
for extremely light load condition. This function is employed to achieve smaller ripple at extremely light load
condition.
12
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ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
8 Application and Implementation
注
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The device is typical step-down DC-DC converter. It is typically used to convert a higher dc voltage to a lower dc
voltage with a maximum available output current of 3 A. The following design procedure can be used to select
component values for the TPS563231. Alternately, the WEBENCH® software may be used to generate a
complete design. The WEBENCH software uses an iterative design procedure and accesses a comprehensive
database of components when generating a design. This section presents a simplified discussion of the design
process.
8.2 Typical Application
The TPS563231 only requires a few external components to convert from a higher variable voltage supply to a
fixed output voltage. 图 13 shows a basic schematic of 3.3-V output application. This section provides the design
procedure.
VIN 12 V
BST
VIN
CBOOT
0.1 µF
CIN
10 µF
VOUT
3.3 V
L 3.3 µH
SW
FB
EN
RFBT
45.3 kΩ
COUT
47 µF
GND
RFBB
10 kΩ
图 13. TPS563231 3.3V/3-A Reference Design
8.2.1 Design Requirements
表 1 shows the design parameters for this application.
表 1. Design Parameters
PARAMETER
Input voltage range
EXAMPLE VALUE
4.5 to 17 V
3.3 V
Output voltage
Transient response, 3-A load step
Input ripple voltage
ΔVout = ±5%
400 mV
Output ripple voltage
Output current rating
Operating frequency
30 mV
3 A
600 kHz
8.2.2 Detailed Design Procedure
8.2.2.1 Output Voltage Resistors Selection
The output voltage is set with a resistor divider from the output node to the FB pin. 1% tolerance or better divider
resistors are recommended. Start by using 公式 2 to calculate VOUT
.
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13
TPS563231
ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
www.ti.com.cn
To improve efficiency at very light loads consider using larger value resistors, too high of resistance will be more
susceptible to noise and voltage errors from the FB input current will be more noticeable.
≈
’
÷
◊
RFBT
RFBB
VOUT = 0.6 ì 1 +
∆
«
(2)
Choose the value of RFBB to be 10 kΩ. With the desired output voltage set to 3.3 V and the VREF = 0.6 V, the
RFBT value can then be calculated using 公式 2. The formula yields to a value 45.3 kΩ of RFBT
.
8.2.2.2 Output Filter Selection
The LC filter used as the output filter has double pole at:
1
fP
=
2p L ì COUT
(3)
At low frequencies, the overall loop gain is set by the output set-point resistor divider network and the internal
gain of the device. The low frequency phase is 180°. At the output filter pole frequency, the gain rolls off at a –40
dB per decade rate and the phase drops rapidly. D-CAP3 introduces a high frequency zero that reduces the gain
roll off to –20 dB per decade and increases the phase to 90° one decade above the zero frequency. The inductor
and capacitor for the output filter must be selected so that the double pole of 公式 3 is located below the high
frequency zero but close enough that the phase boost provided be the high frequency zero provides adequate
phase margin for a stable circuit. To meet this requirement use the values recommended in 表 2.
表 2. Recommended Component Values
L1 (µH)
TYP
1.2
OUTPUT
VOLTAGE (V)
R1 (kΩ)
R2 (kΩ)
C8 + C9 (µF)
MIN
1
MAX
4.7
4.7
4.7
4.7
4.7
4.7
4.7
4.7
4.7
1
1.05
1.2
1.5
1.8
2.5
3.3
5
6.65
7.5
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
20 to 68
20 to 68
20 to 68
20 to 68
20 to 68
20 to 68
20 to 68
20 to 68
20 to 68
1
1.2
10
1.2
1.5
1.5
2.2
2.2
3.3
3.3
1.5
15
1.5
20
2.2
31.6
45.3
73.2
97.6
2.2
3.3
4.7
6.5
4.7
The inductor peak-to-peak ripple current, peak current and RMS current are calculated using 公式 4, 公式 5, and
公式 6. The inductor saturation current rating must be greater than the calculated peak current and the RMS or
heating current rating must be greater than the calculated RMS current.
V
- VOUT
VOUT
IN_MAX
IL _PP
=
ì
V
L ì fSW
IN_MAX
(4)
(5)
IL _PP
IL _PK = IOUT
+
2
1
IL _RMS
=
IO2 UT
+
IL2_PP
12
(6)
For this design example, the calculated peak current is 3.67 A and the calculated RMS current is 3.02 A. The
inductor used is a WE 74437349033 with a peak current rating of 12 A and an RMS current rating of 6 A.
The capacitor value and ESR determine the amount of output voltage ripple. The TPS563231 is intended for use
with ceramic or other low ESR capacitors. Recommended values range from 20 µF to 68 µF. Use 公式 7 to
determine the required RMS current rating for the output capacitor.
VOUT ì V
- VOUT
(
)
IN_MAX
IC _RMS
=
12 ì V
ì L ì fSW
IN_MAX
(7)
14
版权 © 2018–2019, Texas Instruments Incorporated
TPS563231
www.ti.com.cn
ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
For this design two Murata GRM21BR61A226ME44L 22-µF/10-V output capacitors are used in parallel. The
typical ESR is 3mΩ each. The calculated RMS current is 0.39 A and each output capacitor is rated for 5 A.
8.2.2.3 Input Capacitor Selection
The TPS563231 requires an input decoupling capacitor and a bulk capacitor is needed depending on the
application. TI recommends a ceramic capacitor over 10-µF for the decoupling capacitor. An additional 0.1-µF
capacitor from VIN pin to GND pin is also recommended to provide additional high frequency filtering. The
capacitor voltage rating needs to be greater than the maximum input voltage, 25 V or higher voltage rating is
recommended.
8.2.2.4 Bootstrap Capacitor Selection
A 0.1-µF ceramic capacitor must be connected between the BST to SW pin for proper operation. 10 V or higher
voltage rating is recommended.
版权 © 2018–2019, Texas Instruments Incorporated
15
TPS563231
ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
www.ti.com.cn
8.2.3 Application Curves
VSW [5V/div]
VSW [5V/div]
VOUT(AC) [20mV/div]
VOUT(AC) [10mV/div]
iL [2A/div]
iL [1A/div]
Time [2µs/div]
Time [2µs/div]
图 14. CCM Mode
图 15. DCM Mode
VSW [5V/div]
VIN [5V/div]
VOUT [1V/div]
VOUT(AC) [20mV/div]
iL [2A/div]
iL [1A/div]
Time [8ms/div]
Time [800µs/div]
IOUT of TPS563231: 10 mA
图 16. PSM Mode
图 17. Start-up by VIN
VEN [1V/div]
VOUT(AC) [100mV/div]
VOUT [1V/div]
iOUT [1A/div]
iL [2A/div]
Time [800µs/div]
Time [100µs/div]
图 18. Start-up by EN
图 19. Load Transient
16
版权 © 2018–2019, Texas Instruments Incorporated
TPS563231
www.ti.com.cn
ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
VOUT [1V/div]
iL [2A/div]
VOUT [1V/div]
iL [2A/div]
Time [20ms/div]
Time [20ms/div]
图 20. Short Protection
图 21. Short Recovery
9 Power Supply Recommendations
TPS563231 is designed to operate from input supply voltage in the range of 4.5 V to 17 V. Buck converters
require the input voltage to be higher than the output voltage for proper operation. The maximum recommended
operating duty cycle is 72%. Using that criteria, the minimum recommended input voltage is VO / 0.72.
版权 © 2018–2019, Texas Instruments Incorporated
17
TPS563231
ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
www.ti.com.cn
10 Layout
10.1 Layout Guidelines
1. VIN and GND traces should be as wide as possible to reduce trace impedance. The wide areas are also of
advantage from the view point of heat dissipation.
2. The input capacitor and output capacitor should be placed as close to the device as possible to minimize
trace impedance.
3. Provide sufficient vias for the input capacitor and output capacitor.
4. Keep the SW trace as physically short and wide as practical to minimize radiated emissions.
5. Do not allow switching current to flow under the device.
6. A separate VOUT path should be connected to the upper feedback resistor.
7. Make a Kelvin connection to the GND pin for the feedback path.
8. Voltage feedback loop should be placed away from the high-voltage switching trace, and preferably has
ground shield.
9. The trace of the VFB node should be as small as possible to avoid noise coupling.
10. The GND trace between the output capacitor and the GND pin should be as wide as possible to minimize its
trace impedance.
10.2 Layout Example
VIN
GND
CIN
RFBB
RFBT
VIN
SW
FB
EN
EN
Control
SW
GND
BST
CBST
L
VOUT
GND
COUT
VIA (Connected to GND plane at bottom layer)
VIA (Connected to SW)
图 22. TPS563231 Layout
18
版权 © 2018–2019, Texas Instruments Incorporated
TPS563231
www.ti.com.cn
ZHCSIH6B –JULY 2018–REVISED OCTOBER 2019
11 器件和文档支持
11.1 相关链接
下表列出了快速访问链接。类别包括技术文档、支持和社区资源、工具和软件，以及立即订购快速访问。
表 3. 相关链接
器件
产品文件夹
请单击此处
立即订购
技术文档
工具与软件
请单击此处
支持和社区
请单击此处
TPS563231
请单击此处
请单击此处
11.2 接收文档更新通知
要接收文档更新通知，请导航至 ti.com. 上的器件产品文件夹。单击右上角的通知我进行注册，即可每周接收产品
信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
11.3 社区资源
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 商标
D-CAP3, E2E are trademarks of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
蓝光 is a trademark of Blu-ray Disc Association.
11.5 静电放电警告
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可
能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可
能会导致器件与其发布的规格不相符。
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通知，且
不会对此文档进行修订。如需获取此数据表的浏览器版本，请查阅左侧的导航栏。
版权 © 2018–2019, Texas Instruments Incorporated
19
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS563231DRLR
TPS563231DRLT
ACTIVE
ACTIVE
SOT-5X3
SOT-5X3
DRL
DRL
6
6
4000 RoHS & Green
250 RoHS & Green
Call TI | SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
-40 to 125
3231
3231
Call TI | SN
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
PACKAGE OUTLINE
DRL0006A
SOT - 0.6 mm max height
S
C
A
L
E
8
.
0
0
0
PLASTIC SMALL OUTLINE
1.7
1.5
PIN 1
ID AREA
A
1
6
4X 0.5
1.7
1.5
2X 1
NOTE 3
4
3
1.3
1.1
0.3
6X
0.05
TYP
0.00
B
0.1
0.6 MAX
C
SEATING PLANE
0.05 C
0.18
0.08
6X
SYMM
SYMM
0.27
0.15
6X
0.1
0.05
C A B
0.4
0.2
6X
4223266/C 12/2021
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. Reference JEDEC registration MO-293 Variation UAAD
www.ti.com
EXAMPLE BOARD LAYOUT
DRL0006A
SOT - 0.6 mm max height
PLASTIC SMALL OUTLINE
6X (0.67)
SYMM
1
6
6X (0.3)
SYMM
4X (0.5)
4
3
(R0.05) TYP
(1.48)
LAND PATTERN EXAMPLE
SCALE:30X
0.05 MIN
AROUND
0.05 MAX
AROUND
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDERMASK DETAILS
4223266/C 12/2021
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
7. Land pattern design aligns to IPC-610, Bottom Termination Component (BTC) solder joint inspection criteria.
www.ti.com
EXAMPLE STENCIL DESIGN
DRL0006A
SOT - 0.6 mm max height
PLASTIC SMALL OUTLINE
6X (0.67)
SYMM
1
6
6X (0.3)
SYMM
4X (0.5)
4
3
(R0.05) TYP
(1.48)
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:30X
4223266/C 12/2021
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
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