TPS563249DDCR [TI]

17V、3A、恒定 1.4MHz 同步降压稳压器 | DDC | 6 | -40 to 125;
TPS563249DDCR
型号: TPS563249DDCR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

17V、3A、恒定 1.4MHz 同步降压稳压器 | DDC | 6 | -40 to 125

开关 光电二极管 输出元件 稳压器
文件: 总26页 (文件大小:1203K)
中文:  中文翻译
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TPS563249  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
TPS563249 17V3A、恒定 1.4MHz 同步降压稳压器  
1 特性  
3 说明  
1
3A 转换器集成了 70m30mFET  
TPS563249 是一款采用 SOT-23 封装的简单易用型  
3A 同步降压转换器。  
D-CAP3™模式控制,用于快速瞬态响应  
输入电压范围:4.5V 17V  
输出电压范围:0.6V 7V  
强制连续导通模式  
该器件经过优化,最大限度地减少了运行所需的外部组  
件并可实现低待机电流。  
此开关稳压器采用 D-CAP3 模式控制,能够提供快速  
瞬态响应,并且在无需外部补偿组件的情况下支持诸如  
高分子聚合物等低等效串联电阻 (ESR) 输出电容以及  
超低 ESR 陶瓷电容器。  
恒定 1.4MHz 开关频率  
低关断电流(低于 10µA)  
1% 反馈电压精度 (25°C)  
从预偏置输出电压中启动  
逐周期过流限制  
TPS563249 采用强制连续导通模式 (FCCM) 运行,在  
轻载工作期间保持固定的 1.4MHz 开关频率,并可消  
除系统干扰。TPS563249 采用 6 引脚 1.6mm ×  
2.9mm SOT (DDC) 封装,额定结温范围为 –40°C 至  
125°C。  
断续模式过流保护  
非锁存欠压保护 (UVP) 和热关断 (TSD) 保护  
固定软启动时间:1.7ms  
2 应用  
器件信息(1)  
宽带调制解调器  
器件型号  
TPS563249  
封装  
封装尺寸(标称值)  
接入点网络  
无线路由器  
安全监控  
SOT-23-THIN (6)  
1.60mm x 2.90mm  
(1) 如需了解所有可用封装,请参阅产品说明书末尾的可订购产品  
附录。  
电视、机顶盒  
空白  
空白  
简化原理图  
TPS563249 效率  
Efficiency at 12V input  
TPS563249  
1
100%  
6
5
4
VBST  
EN  
GND  
SW  
90%  
80%  
70%  
2
3
EN  
VOUT  
COUT  
VIN  
VIN  
VOUT  
VFB  
CIN  
60%  
Vout = 0.9V  
Vout = 1.05V  
50%  
Vout = 1.2V  
Vout = 1.5V  
Vout = 1.8V  
Vout = 2.5V  
40%  
30%  
Vout = 3.3V  
Vout = 5V  
20%  
0
0.5  
1
1.5  
2
2.5  
3
Output Current (A)  
D001  
1
本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。 有关适用的官方英文版本的最新信息,请访问 www.ti.com,其内容始终优先。 TI 不保证翻译的准确  
性和有效性。 在实际设计之前,请务必参考最新版本的英文版本。  
English Data Sheet: SLVSE54  
 
 
 
TPS563249  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
www.ti.com.cn  
目录  
7.4 Device Functional Modes........................................ 11  
Application and Implementation ........................ 12  
8.1 Application Information............................................ 12  
8.2 Typical Application ................................................. 12  
Power Supply Recommendations...................... 16  
1
2
3
4
5
6
特性.......................................................................... 1  
应用.......................................................................... 1  
说明.......................................................................... 1  
修订历史记录 ........................................................... 2  
Pin Configuration and Functions......................... 3  
Specifications......................................................... 4  
6.1 Absolute Maximum Ratings ...................................... 4  
6.2 ESD Ratings.............................................................. 4  
6.3 Recommended Operating Conditions....................... 4  
6.4 Thermal Information.................................................. 4  
6.5 Electrical Characteristics........................................... 5  
6.6 Typical Characteristics.............................................. 6  
Detailed Description .............................................. 9  
7.1 Overview ................................................................... 9  
7.2 Functional Block Diagram ......................................... 9  
7.3 Feature Description................................................... 9  
8
9
10 Layout................................................................... 17  
10.1 Layout Guidelines ................................................. 17  
10.2 Layout Example .................................................... 17  
11 器件和文档支持 ..................................................... 18  
11.1 接收文档更新通知 ................................................. 18  
11.2 社区资源................................................................ 18  
11.3 ....................................................................... 18  
11.4 静电放电警告......................................................... 18  
11.5 术语表 ................................................................... 18  
12 机械、封装和可订购信息....................................... 18  
7
4 修订历史记录  
注:之前版本的页码可能与当前版本有所不同。  
日期  
修订版本  
说明  
2018 12 月  
*
初始发行版。  
2
Copyright © 2018, Texas Instruments Incorporated  
 
TPS563249  
www.ti.com.cn  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
5 Pin Configuration and Functions  
DDC Package  
6-Pin SOT  
Top View  
GND  
SW  
1
6
5
4
VBST  
EN  
2
3
VIN  
VFB  
Not to scale  
Pin Functions  
PIN  
I/O  
DESCRIPTION  
NAME  
NO.  
EN  
5
I
Enable input control. Active high and must be pulled up to enable the device.  
Ground pin Source terminal of low-side power NFET as well as the ground terminal for controller  
circuit. Connect sensitive VFB to this GND at a single point.  
GND  
SW  
1
2
6
O
O
Switch node connection between high-side NFET and low-side NFET.  
Supply input for the high-side NFET gate drive circuit. Connect 0.1 µF capacitor between VBST  
and SW pins.  
VBST  
VFB  
VIN  
4
3
I
I
Converter feedback input. Connect to output voltage with feedback resistor divider.  
Input voltage supply pin. The drain terminal of high-side power NFET.  
Copyright © 2018, Texas Instruments Incorporated  
3
TPS563249  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
www.ti.com.cn  
6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
–0.3  
–0.3  
–0.3  
–0.3  
–0.3  
–2  
MAX  
19  
UNIT  
V
VIN  
VBST  
24.5  
26.5  
5.5  
V
VBST (10 ns transient)  
V
VBST (vs SW)  
V
Input voltage  
VFB  
5.5  
V
SW  
SW (10 ns transient)  
19  
V
–3.5  
-0.3  
–40  
–55  
21  
V
EN  
VIN + 0.3  
150  
V
Operating junction temperature, TJ  
Storage temperature, Tstg  
°C  
°C  
150  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
6.2 ESD Ratings  
VALUE  
UNIT  
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)  
±2000  
V(ESD)  
Electrostatic discharge  
V
Charged-device model (CDM), per JEDEC specification JESD22-  
C101(2)  
±500  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
4.5  
NOM  
MAX  
17  
UNIT  
V
VIN  
EN  
TJ  
Supply input voltage range  
EN Input voltage range  
–0.1  
–40  
VIN  
V
Operating junction temperature  
125  
°C  
6.4 Thermal Information  
TPS563249  
DDC (SOT)  
6 PINS  
117.1  
THERMAL METRIC(1)  
UNIT  
RθJA  
RθJC(top)  
RθJB  
ψJT  
Junction-to-ambient thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
57.3  
31.2  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
11.2  
ψJB  
31.3  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
4
Copyright © 2018, Texas Instruments Incorporated  
TPS563249  
www.ti.com.cn  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
6.5 Electrical Characteristics  
TJ = –40°C to 125°C, VIN = 12 V (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
SUPPLY CURRENT  
IVIN(SDN)  
Shutdown supply current  
VIN current, EN = 0 V, TJ = 25°C  
2.5  
10  
1.34  
1200  
µA  
LOGIC THRESHOLD  
VENH  
VENL  
REN  
Enable threshold  
Rising  
1.27  
1.15  
1000  
V
V
Enable threshold  
Falling  
1.08  
800  
EN pin resistance to GND  
VEN = 1 V  
kΩ  
VFB VOLTAGE AND DISCHARGE RESISTANCE  
TJ = 25°C  
594  
588  
600  
600  
0
606  
612  
±50  
mV  
mV  
nA  
VFB  
FB voltage  
IFB  
FB input current  
VFB = 0.7 V  
MOSFET  
RDS(on)h  
RDS(on)l  
High-side switch resistance  
Low-side switch resistance  
TJ = 25°C  
TJ = 25°C  
70  
30  
mΩ  
mΩ  
CURRENT LIMIT  
High side FET source  
Current limit  
Iocl_h_source  
Iocl_l_source  
Iocl_l_sink  
5.5  
3.1  
1.1  
6.3  
3.9  
1.7  
7.1  
4.7  
A
A
A
Low side FET source  
Current limit  
Low side FET sink Current  
limit  
THERMAL SHUTDOWN  
Shutdown temperature  
Hysteresis  
160  
25  
Thermal shutdown  
TSDN  
°C  
threshold(1)  
ON-TIME TIMER CONTROL  
tON(MIN)  
Minimum on time(1)  
VIN = 12 V, load = 3 A  
Internal soft-start time  
50  
ns  
ns  
tOFF(MIN)  
SOFT START  
tss  
Minimum off time  
250  
Soft-start time  
1.7  
ms  
FREQUENCY  
Fsw  
Switching frequency  
1250  
1400  
1550  
kHz  
OUTPUT UNDERVOLTAGE PROTECTION  
VUVP  
Output UVP threshold  
UVP propagation delay  
Hiccup detect (H > L)  
65%  
0.36  
tUVPDLY  
ms  
ms  
UVP protection Hiccup Time  
before restart  
tHIC  
25  
UVLO  
Wake up VIN voltage  
Shutdown VIN voltage  
Hysteresis VIN voltage  
4.2  
3.8  
0.4  
4.4  
UVLO  
UVLO threshold  
3.6  
V
(1) Not production tested.  
版权 © 2018, Texas Instruments Incorporated  
5
TPS563249  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
www.ti.com.cn  
6.6 Typical Characteristics  
VIN = 12 V (unless otherwise noted)  
2.96  
2.94  
2.92  
2.9  
610  
608  
606  
604  
602  
600  
598  
596  
594  
592  
590  
2.88  
2.86  
2.84  
2.82  
2.8  
2.78  
2.76  
-40  
-20  
0
20  
40  
60  
80  
100 120 140  
-40  
-20  
0
20  
40  
60  
80  
100 120 140  
Junction Temperature (°C)  
Junction Temperature (°C)  
D001  
D001  
1. Shutdown Current vs Junction Temperature  
2. VFB Voltage vs Junction Temperature  
1.3  
1.29  
1.28  
1.27  
1.26  
1.25  
1.24  
1.18  
1.17  
1.16  
1.15  
1.14  
1.13  
1.12  
1.11  
1.1  
-40  
-20  
0
20  
40  
60  
80  
100 120 140  
-40  
-20  
0
20  
40  
60  
80  
100 120 140  
Junction Temperature (°C)  
Junction Temperature (°C)  
D001  
D001  
3. EN Rising threshold vs Junction Temperature  
4. EN Falling threshold vs Junction Temperature  
110  
100  
90  
60  
50  
40  
30  
20  
10  
80  
70  
60  
50  
40  
30  
-40  
-20  
0
20  
40  
60  
80  
100 120 140  
-40  
-20  
0
20  
40  
60  
80  
100 120 140  
Junction Temperature (°C)  
Junction Temperature (°C)  
D001  
D001  
5. High-Side Rds(On) vs Junction Temperature  
6. Low-Side Rds(On) vs Junction Temperature  
6
版权 © 2018, Texas Instruments Incorporated  
TPS563249  
www.ti.com.cn  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
Typical Characteristics (接下页)  
VIN = 12 V (unless otherwise noted)  
3.4  
5.2  
5
3.3  
3.2  
3.1  
3
4.8  
4.6  
4.4  
4.2  
4
2.9  
2.8  
2.7  
2.6  
Iout = 3A  
Iout = 1.5A  
Iout = 3A  
Iout = 1.5A  
4.6  
4.8  
5
5.2  
5.4  
5.6  
5.8  
6
6.2  
7
7.5  
8
8.5  
9
Input Voltage (V)  
Input Voltage (V)  
D001  
D001  
7. Dropout for 3.3 V Output Voltage  
8. Dropout for 5 V Output Voltage  
90%  
90%  
80%  
70%  
60%  
50%  
40%  
30%  
20%  
10%  
0
80%  
70%  
60%  
50%  
40%  
30%  
20%  
10%  
0
Vin = 5V  
Vin = 9V  
Vin = 12V  
Vin = 15V  
Vin = 17V  
Vin = 5V  
Vin = 9V  
Vin = 12V  
Vin = 15V  
Vin = 17V  
0
0.5  
1
1.5  
2
2.5  
3
0
0.5  
1
1.5  
2
2.5  
3
Output Current (A)  
Output Current (A)  
D001  
D001  
0.9 V Efficiency  
L = 0.56 µH  
(Wurth:7443835600  
56)  
1.05 V Efficiency  
L = 0.56 µH  
(Wurth:7443835600  
56)  
9. Efficiency vs Output Current, VOUT = 0.9 V  
10. Efficiency vs Output Current, VOUT = 1.05 V  
90%  
80%  
70%  
60%  
50%  
40%  
30%  
20%  
10%  
0
90%  
80%  
70%  
60%  
50%  
40%  
30%  
20%  
10%  
0
Vin = 5V  
Vin = 9V  
Vin = 12V  
Vin = 15V  
Vin = 17V  
Vin = 5V  
Vin = 9V  
Vin = 12V  
Vin = 15V  
Vin = 17V  
0
0.5  
1
1.5  
2
2.5  
3
0
0.5  
1
1.5  
2
2.5  
3
Output Current (A)  
Output Current (A)  
D001  
D001  
1.2 V Efficiency  
L = 0.68 µH  
(Wurth:7443835600  
68)  
1.5 V Efficiency  
L = 0.68 µH  
(Wurth:7443835600  
68)  
11. Efficiency vs Output Current, VOUT = 1.2 V  
12. Efficiency vs Output Current, VOUT = 1.5 V  
版权 © 2018, Texas Instruments Incorporated  
7
 
TPS563249  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
www.ti.com.cn  
Typical Characteristics (接下页)  
VIN = 12 V (unless otherwise noted)  
100%  
100%  
90%  
80%  
70%  
60%  
50%  
40%  
30%  
20%  
10%  
0
90%  
80%  
70%  
60%  
50%  
40%  
30%  
20%  
10%  
0
Vin = 5V  
Vin = 9V  
Vin = 12V  
Vin = 15V  
Vin = 17V  
Vin = 5V  
Vin = 9V  
Vin = 12V  
Vin = 15V  
Vin = 17V  
0
0.5  
1
1.5  
2
2.5  
3
0
0.5  
1
1.5  
2
2.5  
3
Output Current (A)  
Output Current (A)  
D001  
D001  
1.8 V Efficiency  
L = 1 µH  
(Wurth:744311100)  
2.5 V Efficiency  
L = 1 µH  
(Wurth:744311100)  
13. Efficiency vs Output Current, VOUT = 1.8 V  
14. Efficiency vs Output Current, VOUT= 2.5 V  
100%  
90%  
80%  
70%  
60%  
50%  
40%  
30%  
20%  
10%  
0
100%  
90%  
80%  
70%  
60%  
50%  
40%  
30%  
20%  
10%  
0
Vin = 6.5V  
Vin = 9V  
Vin = 12V  
Vin = 15V  
Vin = 17V  
Vin = 9V  
Vin = 12V  
Vin = 15V  
Vin = 17V  
0
0.5  
1
1.5  
2
2.5  
3
0
0.5  
1
1.5  
2
2.5  
3
Output Current (A)  
Output Current (A)  
D001  
D001  
3.3 V Efficiency  
L = 1.5 µH  
(Wurth:744311150)  
5 V Efficiency  
L = 1.5 µH  
(Wurth:744311150)  
15. Efficiency vs Output Current, VOUT= 3.3 V  
16. Efficiency vs Output Current, VOUT = 5 V  
8
版权 © 2018, Texas Instruments Incorporated  
TPS563249  
www.ti.com.cn  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
7 Detailed Description  
7.1 Overview  
The TPS563249 is a 3-A synchronous step-down converter. The proprietary D-CAP3 mode control supports low  
ESR output capacitors such as specialty polymer capacitors and multi-layer ceramic capacitors without complex  
external compensation circuits. The fast transient response of D-CAP3 mode control can reduce the output  
capacitance required to meet a specific level of performance.  
7.2 Functional Block Diagram  
EN  
5
3
VIN  
VUVP  
+
UVP  
Hiccup  
VREG5  
Control Logic  
Regulator  
UVLO  
4
FB  
BST  
SW  
6
2
PWM  
Voltage  
Reference  
+
+
+
+
SS  
Soft Start  
HS  
Ripple Injection  
One-Shot  
TSD  
XCON  
VREG5  
LS  
OCL  
threshold  
OCL  
+
1
GND  
+
NOC  
NOC  
threshold  
7.3 Feature Description  
7.3.1 Adaptive On-Time Control and PWM Operation  
The main control loop of the TPS563249 is adaptive on-time pulse width modulation (PWM) controller that  
supports a proprietary D-CAP3 mode control. The D-CAP3 mode control combines adaptive on-time control with  
an internal compensation circuit for pseudo-fixed frequency and low external component count configuration with  
both low-ESR and ceramic output capacitors. It is stable even with virtually no ripple at the output.  
At the beginning of each cycle, the high-side MOSFET is turned on. This MOSFET is turned off after internal one  
shot timer expires. This one shot duration is set proportional to the converter input voltage, VIN, and inversely  
proportional to the output voltage, VO, to maintain a pseudo-fixed frequency over the input voltage range, hence  
it is called adaptive on-time control. The one-shot timer is reset and the high-side MOSFET is turned on again  
when the feedback voltage falls below the reference voltage. An internal ramp is added to reference voltage to  
simulate output ripple, eliminating the need for ESR induced output ripple from D-CAP3 mode control.  
版权 © 2018, Texas Instruments Incorporated  
9
TPS563249  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
www.ti.com.cn  
Feature Description (接下页)  
7.3.2 Soft Start and Pre-Biased Soft Start  
The TPS563249 has an internal 1.7-ms soft-start. When the EN pin becomes high, the internal soft-start function  
begins ramping up the reference voltage to the PWM comparator.  
If the output capacitor is pre-biased at startup, the devices initiate switching and start ramping up only after the  
internal reference voltage becomes greater than the feedback voltage VFB. This scheme ensures that the  
converters ramp up smoothly into regulation point.  
7.3.3 Current Protection  
There are three kinds of current protection in TPS563249: High-side FET source current limit, low-side FET  
source current limit, and low-side FET sink current limit.  
The output over-current limit (OCL) is implemented using a cycle-by-cycle valley detect control circuit. The switch  
current is monitored during the OFF state by measuring the low-side FET drain to source voltage. This voltage is  
proportional to the switch current. To improve accuracy, the voltage sensing is temperature compensated.  
During the on time of the low-side FET switch, the inductor current flow through low-side FET and decreases  
linearly. The average value of the inductor current is the load current IOUT. If the monitored current is above the  
low-side FET source current limit level, the converter maintains low-side FET on and delays the creation of a  
new set pulse, even the voltage feedback loop requires one, until the current cross the low-side FET source  
current limit level. In subsequent switching cycles, the on-time is set to a fixed value and the current is monitored  
in the same manner.  
There are some important considerations for this type of over-current protection. The load current is higher than  
the over-current threshold by one half of the peak-to-peak inductor ripple current. Also, when the current is being  
limited, the output voltage tends to fall as the demanded load current may be higher than the current available  
from the converter. This may cause the output voltage to fall. When the VFB voltage falls below the UVP  
threshold voltage, the UVP comparator detects it. And then, the device will shut down after the UVP delay time  
(typically 0.36 ms) and re-start after the hiccup time (typically 25 ms).  
When the over current condition is removed, the output voltage returns to the regulated value.  
During the on time of the high-side FET switch, the inductor current flow through high-side FET and increases at  
a linear rate determined by VIN, VOUT, the on-time and the output inductor value. The switch current is compared  
with high-side FET source current limit after a short blanking time. If the cross-limit event detected before the one  
shot timer expires, the high-side FET is turn off immediately, and is not allowed on in the following 1 µS period.  
TPS563249 works in Forced Continuous Conduction Mode (FCCM). To support light load operation, the current  
flowing through low-side FET is allowed to be negative, which means the current flow from drain to source of  
low-side FET. This negative current is compared with low-side FET sink current limit to prevent device from being  
over-current damaged. Once the sink current cross limit, the low-side FET is turn off immediately. Both high-side  
FET and low-side FET will keep off until the VFB voltage falls below reference voltage.  
7.3.4 Undervoltage Lockout (UVLO) Protection  
UVLO protection monitors the internal regulator voltage. When the voltage is lower than UVLO threshold voltage,  
the device is shut off. This protection is non-latching.  
7.3.5 Thermal Shutdown  
The device monitors the temperature of itself. If the temperature exceeds the thermal shutdown threshold value  
(typically 160°C), the device will shut off. This is a non-latch protection. The device will resume normal working  
once the temperature return below the recovery threshold value (typically 135°C).  
10  
版权 © 2018, Texas Instruments Incorporated  
TPS563249  
www.ti.com.cn  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
7.4 Device Functional Modes  
7.4.1 Normal Operation  
When the input voltage is above the UVLO threshold and the EN voltage is above the enable threshold, the  
TPS563249 can operate in the continuous conduction mode (CCM) at a fixed frequency of 1.4 MHz. If EN pin is  
driven by a control signal, the required power on sequence is that applying input voltage at VIN pin firstly, then  
pull EN pin high. Be sure that the EN pin voltage isn't higher than VIN pin voltage. If EN pin is not used, it can be  
tied to VIN pin directly.  
7.4.2 Standby Operation  
TPS563249 can be placed in standby by asserting the EN pin low.  
版权 © 2018, Texas Instruments Incorporated  
11  
TPS563249  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
www.ti.com.cn  
8 Application and Implementation  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
8.1 Application Information  
The device is a typical step-down DC-DC converter. It is typically used to convert a higher dc voltage to a lower  
dc voltage with a maximum available output current of 3 A. The following design procedure can be used to select  
component values for the TPS563249. Alternately, the WEBENCH® software may be used to generate a  
complete design. The WEBENCH software uses an iterative design procedure and accesses a comprehensive  
database of components when generating a design. This section presents a simplified discussion of the design  
process.  
8.2 Typical Application  
The application schematic in 17 was developed to meet the previous requirements. This circuit is available as  
the evaluation module (EVM). The sections provide the design procedure.  
17 shows the TPS563249 6.5-V to 17-V input, 3.3-V output converter schematic.  
R4 0   
C7 0.1 F  
1
2
6
5
GND  
SW  
VBST  
EN  
L1  
VOUT = 3.3V/3A  
R3 10 kꢀ  
EN  
VOUT  
1.5 H  
C9  
22 F  
C8  
NC  
3
4
VIN  
VFB  
VOUT  
R1 45.3 kꢀ  
R2  
10 kꢀ  
C4  
1
C1  
C2  
C3  
10 F  
NC  
0.1 F  
1
Not Installed  
VIN  
1
17. 3.3-V/3-A Reference Design  
12  
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TPS563249  
www.ti.com.cn  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
Typical Application (接下页)  
8.2.1 Design Requirements  
1 shows the design parameters for this application.  
1. Design Parameters  
PARAMETER  
Input voltage range  
EXAMPLE VALUE  
6.5 to 17 V  
3.3 V  
Output voltage  
Transient response, 1.5-A load step  
Input ripple voltage  
ΔVOUT = ±5%  
400 mV  
100 mV  
3 A  
Output ripple voltage  
Output current rating  
Operating frequency  
1.4 MHz  
8.2.2 Detailed Design Procedure  
8.2.2.1 Output Voltage Resistors Selection  
The output voltage is set with a resistor divider from the output node to the VFB pin. TI recommends to use 1%  
tolerance or better divider resistors. Start by using 公式 1 to calculate VOUT  
.
Too high of resistance is more susceptible to noise, and voltage errors from the VFB input current is more  
noticeable.  
R1  
R2  
VOUT = 0.6 ì(1+  
)
(1)  
8.2.2.2 Output Filter Selection  
The LC filter used as the output filter has double pole at:  
1
fP  
=
2p LOUT ì COUT  
(2)  
At low frequencies, the overall loop gain is set by the output set-point resistor divider network and the internal  
gain of the device. The low frequency phase is 180°. At the output filter pole frequency, the gain rolls off at a –40  
dB per decade rate and the phase drops rapidly. D-CAP3 introduces a high frequency zero that reduces the gain  
roll off to –20 dB per decade and increases the phase to 90° one decade above the zero frequency. The inductor  
and capacitor for the output filter must be selected so that the double pole of 公式 2 is located below the high  
frequency zero but close enough that the phase boost provided by the high frequency zero provides adequate  
phase margin for a stable circuit. To meet this requirement use the values recommended in 2.  
2. Recommended Component Values  
L1 (µH)  
TYP  
0.56  
0.56  
0.68  
0.82  
1
OUTPUT  
VOLTAGE (V)  
R1 (kΩ)  
R2 (kΩ)  
C8 + C9 (µF)  
MIN  
0.33  
0.33  
0.47  
0.47  
0.56  
0.68  
0.82  
1
MAX  
1
1
1.05  
1.2  
1.5  
1.8  
2.5  
3.3  
5
6.65  
7.5  
10.0  
10.0  
10.0  
10.0  
10.0  
10.0  
10.0  
10.0  
10.0  
10 to 44  
10 to 44  
10 to 44  
10 to 44  
10 to 44  
10 to 44  
10 to 44  
10 to 44  
10 to 44  
1
10  
1.5  
1.5  
2.2  
2.2  
3.3  
3.3  
3.3  
15  
20  
31.6  
45.3  
73.2  
97.6  
1
1.5  
1.5  
6.5  
1
1.5  
版权 © 2018, Texas Instruments Incorporated  
13  
 
 
 
 
TPS563249  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
www.ti.com.cn  
The inductor peak-to-peak ripple current, peak current and RMS current are calculated using 公式 3, 公式 4, and  
公式 5. The inductor saturation current rating must be greater than the calculated peak current and the RMS or  
heating current rating must be greater than the calculated RMS current.  
V
- VOUT  
VOUT  
IN(MAX)  
IlP-P  
IlPEAK = IO  
ILO(RMS)  
=
ì
V
LO ì fSW  
IN(MAX)  
(3)  
(4)  
IlP-P  
2
+
1
2
2
=
IO  
+
IlP-P  
12  
(5)  
For this design example, the calculated peak current is 3.63 A and the calculated RMS current is 3.02 A. The  
inductor used is a WE 744311150 with a rated current of 11 A.  
The capacitor value and ESR determines the amount of output voltage ripple. The TPS563249 is intended for  
use with ceramic or other low ESR capacitors. Recommended values range from 10 µF to 44 µF. Use 公式 6 to  
determine the required RMS current rating for the output capacitor.  
VOUT ì V - VOUT  
(
)
IN  
ICO(RMS)  
=
12 ì V ì LO ì fSW  
IN  
(6)  
For this design one Murata GRM31CR61A226KE19 22-µF output capacitor is used. The typical ESR is 2 mΩ.  
The calculated RMS current is 0.365 A and output capacitor is rated for 4 A.  
8.2.2.3 Input Capacitor Selection  
The TPS563249 requires an input decoupling capacitor and a bulk capacitor is needed depending on the  
application. TI recommends a ceramic capacitor over 10 µF for the decoupling capacitor. An additional 0.1-µF  
capacitor (C3) from pin 3 to ground is optional to provide additional high frequency filtering. The capacitor voltage  
rating needs to be greater than the maximum input voltage.  
8.2.2.4 Bootstrap Capacitor Selection  
A 0.1-µF ceramic capacitor must be connected between the VBST to SW pin for proper operation. TI  
recommends to use a ceramic capacitor.  
8.2.2.5 Dropout  
With a constant 1.4-MHz switching frequency, there is a minimum input voltage limit for a given output voltage to  
be regulated. This is due to the minimum off time limit. If the input voltage less than the minimum input voltage  
limit, the output voltage drops accordingly, which is called dropout condition. 7 and 8 show the typical  
dropout curve for 3.3 V and 5 V output voltage with 3 A and 1.5 A load respectively. 公式 7 can be used to  
estimate this minimum input voltage limit.  
8176  
59  
:
;
+ 4@OH + 4. × +1 × kPKBB (IEJ ) F P@1 F P@2o + (8 + 4. × +1) × (P@1 + P@2  
)
@
(
8
=
+ (4@OD + 4.) × +1  
+0(/+0)  
1
59  
F PKBB (IEJ )  
(
where  
VOUT = target output voltage  
FSW = maximum switching frequency including tolerance  
toff(min) = minimum off time including tolerance  
Rdsl = low side FET on resistance  
Rdsh = high side FET on resistance  
RL = inductor DC resistance  
IO = maximum load current  
td1 = dead time between high side FET off and low side FET on, 15nS typical  
td2 = dead time between low side FET off and high side FET on, 10nS typical  
Vd = forward voltage of low side FET body diode  
(7)  
14  
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TPS563249  
www.ti.com.cn  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
8.2.3 Application Curves  
TA = 25°C, VIN = 12 V (unless otherwise noted)  
3.34  
3.33  
3.32  
3.31  
3.3  
3.335  
3.33  
3.325  
3.32  
3.315  
3.31  
3.305  
3.3  
3.29  
3.28  
3.27  
3.26  
3.25  
3.295  
3.29  
3.285  
Vin = 6.5V  
Vin = 12V  
Vin = 17V  
0A Load  
1.5A Load  
3A Load  
3.28  
3.275  
3.27  
0
0.5  
1
1.5  
2
2.5  
3
6
7
8
9
10 11 12 13 14 15 16 17  
Input Voltage (V)  
Output Current (A)  
D001  
D001  
18. Load Regulation  
19. Line Regulation  
100%  
90%  
80%  
70%  
60%  
50%  
40%  
30%  
20%  
10%  
0
Vin = 6.5V  
Vin = 9V  
Vin = 12V  
Vin = 15V  
Vin = 17V  
Iout = 3 A  
0
0.5  
1
1.5  
2
2.5  
3
Output Current (A)  
21. Input Voltage Ripple  
D001  
20. Efficiency  
IOUT = 0 A  
Iout = 3 A  
23. Output Voltage Ripple  
22. Output Voltage Ripple  
版权 © 2018, Texas Instruments Incorporated  
15  
TPS563249  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
www.ti.com.cn  
Slew rate is 1.6 A/µS  
Slew rate is 1.6 A/µS  
25. Transient Response, 0 to 3 A  
24. Transient Response, 0.6 to 2.4 A  
IOUT = 3 A  
27. Start-Up Relative to EN  
IOUT = 0 A  
26. Start Up Relative to VIN  
IOUT = 3 A  
29. Shutdown Relative to EN  
IOUT = 0 A  
28. Shutdown Relative to VIN  
9 Power Supply Recommendations  
TPS563249 is designed to operate from input supply voltage in the range of 4.5 V to 17 V. Buck converters  
require the input voltage to be higher than the output voltage for proper operation.  
16  
版权 © 2018, Texas Instruments Incorporated  
TPS563249  
www.ti.com.cn  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
10 Layout  
10.1 Layout Guidelines  
1. VIN and GND traces should be as wide as possible to reduce trace impedance. The wide areas are also of  
advantage from the view point of heat dissipation.  
2. The input capacitor and output capacitor should be placed as close to the device as possible to minimize  
trace impedance.  
3. Provide sufficient vias for the input capacitor and output capacitor.  
4. Keep the SW trace as physically short and wide as practical to minimize radiated emissions.  
5. Do not suggest routing SW copper under the device.  
6. A separate VOUT path should be connected to the upper feedback resistor.  
7. Make a Kelvin connection to the GND pin for the feedback path.  
8. Voltage feedback loop should be placed away from the high-voltage switching trace, and preferably has  
ground shield.  
9. The trace of the VFB node should be as small as possible to avoid noise coupling.  
10. The GND trace between the output capacitor and the GND pin should be as wide as possible to minimize its  
trace impedance.  
10.2 Layout Example  
Trace on the  
GND  
bottom layer  
VOUT  
Additional  
Vias to the  
GND plane  
OUTPUT  
CAPACITOR  
BOOST  
CAPACITOR  
GND  
SW  
BST  
FEEDBACK  
RESISTORS  
TO ENABLE  
CONTROL  
EN  
FB  
OUTPUT  
INDUCTOR  
VIN  
VIN  
GND trace under IC  
On top layer  
INPUT BYPASS  
CAPACITOR  
GND  
30. Example Layout  
版权 © 2018, Texas Instruments Incorporated  
17  
TPS563249  
ZHCSI44A APRIL 2018REVISED DECEMBER 2018  
www.ti.com.cn  
11 器件和文档支持  
11.1 接收文档更新通知  
要接收文档更新通知,请导航至 TI.com.cn 上的器件产品文件夹。单击右上角的通知我 进行注册,即可每周接收产  
品信息更改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。  
11.2 社区资源  
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商按照原样提供。这些内容并不构成 TI 技术规范,  
并且不一定反映 TI 的观点;请参阅 TI 《使用条款》。  
TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在  
e2e.ti.com 中,您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。  
设计支持  
TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。  
11.3 商标  
D-CAP3, E2E are trademarks of Texas Instruments.  
WEBENCH is a registered trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
11.4 静电放电警告  
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损  
伤。  
11.5 术语表  
SLYZ022 TI 术语表。  
这份术语表列出并解释术语、缩写和定义。  
12 机械、封装和可订购信息  
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更,恕不另行通知,且  
不会对此文档进行修订。如需获取此数据表的浏览器版本,请查阅左侧的导航栏。  
18  
版权 © 2018, Texas Instruments Incorporated  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
TPS563249DDCR  
TPS563249DDCT  
ACTIVE SOT-23-THIN  
ACTIVE SOT-23-THIN  
DDC  
DDC  
6
6
3000 RoHS & Green  
250 RoHS & Green  
Call TI | SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 125  
-40 to 125  
249  
249  
Call TI | SN  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
13-May-2023  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
K0  
P1  
W
B0  
Reel  
Diameter  
Cavity  
A0  
A0 Dimension designed to accommodate the component width  
B0 Dimension designed to accommodate the component length  
K0 Dimension designed to accommodate the component thickness  
Overall width of the carrier tape  
W
P1 Pitch between successive cavity centers  
Reel Width (W1)  
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  
Sprocket Holes  
Q1 Q2  
Q3 Q4  
Q1 Q2  
Q3 Q4  
User Direction of Feed  
Pocket Quadrants  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TPS563249DDCR  
TPS563249DDCT  
SOT-23-  
THIN  
DDC  
DDC  
6
6
3000  
250  
180.0  
8.4  
3.2  
3.2  
1.4  
4.0  
8.0  
Q3  
SOT-23-  
THIN  
180.0  
8.4  
3.2  
3.2  
1.4  
4.0  
8.0  
Q3  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
13-May-2023  
TAPE AND REEL BOX DIMENSIONS  
Width (mm)  
H
W
L
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TPS563249DDCR  
TPS563249DDCT  
SOT-23-THIN  
SOT-23-THIN  
DDC  
DDC  
6
6
3000  
250  
210.0  
210.0  
185.0  
185.0  
35.0  
35.0  
Pack Materials-Page 2  
PACKAGE OUTLINE  
DDC0006A  
SOT-23 - 1.1 max height  
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR  
3.05  
2.55  
1.1  
0.7  
1.75  
1.45  
0.1 C  
B
A
PIN 1  
INDEX AREA  
1
6
4X 0.95  
1.9  
3.05  
2.75  
4
3
0.5  
0.3  
0.1  
6X  
TYP  
0.0  
0.2  
C A B  
C
0 -8 TYP  
0.25  
GAGE PLANE  
SEATING PLANE  
0.20  
0.12  
TYP  
0.6  
0.3  
TYP  
4214841/C 04/2022  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. Reference JEDEC MO-193.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DDC0006A  
SOT-23 - 1.1 max height  
SMALL OUTLINE TRANSISTOR  
SYMM  
6X (1.1)  
1
6
6X (0.6)  
SYMM  
4X (0.95)  
4
3
(R0.05) TYP  
(2.7)  
LAND PATTERN EXAMPLE  
EXPLOSED METAL SHOWN  
SCALE:15X  
METAL UNDER  
SOLDER MASK  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL  
EXPOSED METAL  
EXPOSED METAL  
0.07 MIN  
ARROUND  
0.07 MAX  
ARROUND  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
SOLDERMASK DETAILS  
4214841/C 04/2022  
NOTES: (continued)  
4. Publication IPC-7351 may have alternate designs.  
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DDC0006A  
SOT-23 - 1.1 max height  
SMALL OUTLINE TRANSISTOR  
SYMM  
6X (1.1)  
1
6
6X (0.6)  
SYMM  
4X(0.95)  
4
3
(R0.05) TYP  
(2.7)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 THICK STENCIL  
SCALE:15X  
4214841/C 04/2022  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
7. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
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