TRF370317IRGER [TI]
0.4GHz 至 4.0GHz 正交调制器，1.7V 共模电压 | RGE | 24 | -40 to 85;
| 型号： | TRF370317IRGER |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 0.4GHz 至 4.0GHz 正交调制器，1.7V 共模电压 | RGE | 24 | -40 to 85 |
| 文件： | 总28页 (文件大小：879K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TRF370315
TRF370333
www.ti.com
SLWS184J –MARCH 2006–REVISED MAY 2011
0.35-GHz TO 4-GHz QUADRATURE MODULATORS
Check for Samples: TRF370315, TRF370333
1
FEATURES
APPLICATIONS
2
•
75-dBc Single-Carrier WCDMA ACPR
•
Cellular Base Transceiver Station Transmit
at –11-dBm Channel Power
Channel
•
•
•
•
•
•
•
•
Low Noise Floor: –163 dBm/Hz
OIP3 of 23 dBm
•
•
•
•
CDMA: IS95, UMTS, CDMA2000, TD-SCDMA
TDMA: GSM, IS-136, EDGE/UWC-136
Wireless Local Loop
P1dB of 9 dBm
Unadjusted Carrier Feedthrough of –40 dBm
Unadjusted Side-Band Suppression of –40 dBc
Single Supply: 4.5 V–5.5 V Operation
Silicon Germanium Technology
Wireless MAN Wideband Transceivers
SPACE
THE FINAL FRONTIER
RGE PACKAGE
(TOP VIEW)
TRF370333 With 3.3-V CM at I, Q Baseband
Inputs
•
TRF370315 With 1.5-V CM at I, Q Baseband
Inputs
1
2
3
4
5
6
18
17
16
15
14
13
NC
VCC
GND
RF_OUT
NC
GND
LOP
LON
GND
NC
GND
NC
P0024-04
DESCRIPTION
The TRF370315 and TRF370333 are low-noise direct quadrature modulators, capable of converting complex
modulated signals from baseband or IF directly up to RF. The TRF370315 and TRF370333 are ideal for
high-performance direct RF modulation from 350 MHz up to 4 GHz. These modulators are implemented as a
double-balanced mixer. The RF output block consists of a differential to single-ended converter and an RF
amplifier capable of driving a single-ended 50-Ω load without any need of external components. The TRF370333
and TRF370315 devices have different common-mode voltage ratings at the I/Q baseband inputs. The
TRF370315 requires a 1.5-V common-mode voltage, and the TRF370333 requires a 3.3-V common-mode
voltage.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
SLWS184J –MARCH 2006–REVISED MAY 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
FUNCTIONAL BLOCK DIAGRAM
NC
GND
LOP
LON
GND
NC
1
2
3
4
5
6
18
17
16
15
14
13
VCC
GND
RF_OUT
NC
S
0/90
GND
NC
B0175-01
NOTE: NC = No connection
2
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
www.ti.com
SLWS184J –MARCH 2006–REVISED MAY 2011
DEVICE INFORMATION
TERMINAL FUNCTIONS
TERMINAL
I/O
DESCRIPTION
NAME
BBIN
NO.
22
21
9
I
I
I
I
In-phase input
BBIP
In-phase input
BBQN
BBQP
In-quadrature input
In-quadrature input
10
2, 5, 8,11,
12, 14, 17,
19, 20, 23
GND
–
Ground
LON
LOP
4
3
I
I
Local oscillator input
Local oscillator input
1, 6, 7, 13,
15
NC
–
No connect
RF_OUT
VCC
16
O
RF output
18, 24
–
Power supply
ABSOLUTE MAXIMUM RATINGS(1)
Over operating free-air temperature range (unless otherwise noted).
VALUE(2)
–0.3 V to 6
–0.3 V to VI + 0.3
–40 to 150
–40 to 85
–65 to 150
75
UNIT
V
Supply voltage range
Digital I/O voltage range
V
TJ
Operating virtual junction temperature range
Operating ambient temperature range
Storage temperature range
°C
°C
°C
V
TA
Tstg
Human body model (HBM)
Charged device model (CDM)
ESD
Electrostatic discharge ratings
75
V
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
RECOMMENDED OPERATING CONDITIONS
Over operating free-air temperature range (unless otherwise noted).
MIN
NOM
MAX
UNIT
VCC
Power-supply voltage
4.5
5
5.5
V
THERMAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUE
UNIT
RθJA
RθJC
Thermal resistance, junction-to-ambient High-K board, still air
Thermal resistance, junction-to-case
29.4
18.6
°C/W
°C/W
Copyright © 2006–2011, Texas Instruments Incorporated
3
TRF370315
TRF370333
SLWS184J –MARCH 2006–REVISED MAY 2011
www.ti.com
ELECTRICAL CHARACTERISTICS
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DC Parameters
Total supply current (1.5 V CM)
Total supply current (3.3 V CM)
TA = 25°C
TA = 25°C
195
210
205
235
ICC
mA
LO Input (50-Ω, Single-Ended)
LO frequency range
0.35
4
GHz
dBm
dB
fLO
LO input power
–5
0
12
LO port return loss
15
Baseband Inputs
TRF370333
TRF370315
3.3
1.5
VCM
BW
I and Q input dc common voltage
V
1-dB input frequency bandwidth
Input impedance, resistance
350
MHz
kΩ
pF
10
3
TRF370333
TRF370315
Input impedance, parallel capacitance
Input impedance, resistance
ZI(single
ended)
5
kΩ
pF
Input impedance, parallel capacitance
3
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 350 MHz at 0 dBm, TRF370333 (unless
otherwise noted).
RF Output Parameters
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TRF370315: Output RMS voltage over input I (or Q) RMS
voltage
–4.18
dB
G
Voltage gain(1)
TRF370333: Output RMS voltage over input I (or Q) RMS
voltage
–4.0
dB
P1dB
IP3
Output compression point
Output IP3
9.4
24.5
dBm
dBm
dBm
dBm
dBc
IP2
Output IP2
Measured at fLO + 2 × fBB
73.8
Carrier feedthrough
Sideband suppression
Unadjusted
35.6
Unadjusted
33.8
DC only to BB inputs, 13 MHz offset from fLO
1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
–158.0
–152.6
–157.4
Output noise floor
dBm/Hz
(1) Single 4-MHz CW baseband input tone, differential-ended 196 VRMS
.
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 400 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TRF370315: Output RMS voltage over input I (or Q) RMS
voltage
–2.409
dB
G
Voltage gain(1)
TRF370333: Output RMS voltage over input I (or Q) RMS
voltage
–1.905
dB
P1dB
IP3
Output compression point
Output IP3
9.4
23
dBm
dBm
dBm
dBm
dBc
20
IP2
Output IP2
Measured at fLO + 2 × fBB
Unadjusted
62
Carrier feedthrough
Sideband suppression
–37
–39
Unadjusted
(1) Single 4-MHz CW baseband input tone, differential-ended 196 VRMS
.
4
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
www.ti.com
SLWS184J –MARCH 2006–REVISED MAY 2011
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 900 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
–3.552
dB
G
Voltage gain(1)
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
–2.79
dB
P1dB
IP3
Output compression point
Output IP3
9
23
dBm
dBm
dBm
dBm
dBc
dB
20
IP2
Output IP2
Measured at fLO + 2 × fBB
Unadjusted
63
Carrier feedthrough
Sideband suppression
Output return loss
–37
Unadjusted
–42
9
DC only to BB inputs, 13 MHz offset from fLO
1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
1 EDGE signal, Pout = –5 dBm
–160.4
–156.6
–158.5
0.59%
0.63%
Output noise floor
dBm/Hz
1 EDGE signal, Pout = 0 dBm
EVM
Error vector magnitude (rms)
1 EDGE signal, Pout = 0 dBm, 2nd harmonic of LO
1%
= –15 dBm, 3rd harmonic of LO = –33 dBm(2)
(1) Single 4-MHz CW baseband input tone, differential-ended 196 VRMS
.
(2) The second- and third-harmonic tests were made independently at each frequency.
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 1800 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
–3.345
dB
G
Voltage gain(1)
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
–2.367
dB
P1dB
IP3
Output compression point
Output IP3
9.5
23
dBm
dBm
dBm
dBm
dBc
dB
20
IP2
Output IP2
Measured at fLO + 2 × fBB
Unadjusted
55
Carrier feedthrough
Sideband suppression
Output return loss
–40
Unadjusted
–47
8
DC only to BB inputs, 13 MHz offset from fLO
1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
1 EDGE signal, Pout = –5 dBm
–162.6
–160
–159.4
0.66%
0.74%
Output noise floor
dBm/Hz
1 EDGE signal, Pout = 0 dBm
EVM
Error vector magnitude (rms)
1 EDGE signal, Pout = 0 dBm, 2nd harmonic of LO
1%
= –15.5 dBm, 3rd harmonic of LO = –30 dBm(2)
(1) Single 4-MHz CW baseband input tone, differential-ended 196 VRMS
.
(2) The second- and third-harmonic tests were made independently at each frequency.
Copyright © 2006–2011, Texas Instruments Incorporated
5
TRF370315
TRF370333
SLWS184J –MARCH 2006–REVISED MAY 2011
www.ti.com
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 1960 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
–3.449
dB
G
Voltage gain(1)
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
–2.479
dB
P1dB
IP3
Output compression point
Output IP3, TRF370315
Output IP3, TRF370333
Output IP2
9.5
23
dBm
20
18
dBm
20
IP2
Measured at fLO + 2 × fBB
Unadjusted
55
dBm
dBm
dBc
dB
Carrier feedthrough
Sideband suppression
Output return loss
–40
Unadjusted
–47
8
DC only to BB inputs, 13 MHz offset from fLO
1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
1 EDGE signal, Pout = –5 dBm
–162.6
–160
–159.4
0.66%
0.74%
Output noise floor
dBm/Hz
1 EDGE signal, Pout = 0 dBm
EVM
Error vector magnitude (rms)
1 EDGE signal, Pout = 0 dBm, 2nd harmonic of LO
1%
= –15.5 dBm, 3rd harmonic of LO = –30 dBm(2)
(1) Single 4-MHz CW baseband input tone, differential-ended 196 VRMS
.
(2) The second- and third-harmonic tests were made independently at each frequency.
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 2140 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
–3.432
dB
G
Voltage gain(1)
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
–2.791
dB
P1dB
IP3
Output compression point
Output IP3, TRF370315
Output IP3, TRF370333
Output IP2
9.5
23
dBm
20
18
dBm
21
IP2
Measured at fLO + 2 × fBB
Unadjusted
58
dBm
dBm
dBc
dB
Carrier feedthrough
Sideband suppression
Output return loss
–40
–47
8.5
Unadjusted
20-MHz offset from fLO; dc only to BB inputs
–163
Output noise floor
dBm/Hz
dBc
20-MHz offset from fLO; 1 WCDMA signal;
Pin = –20.5 dBVrms (I and Q input)
–162
1 WCDMA signal; Pout = –13 dBm
–75.8
–72
Adjacent-channel power
ratio
ACPR
1 WCDMA signal; Pout = –9 dBm
4 WCDMA signals; Pout = –23 dBm per carrier
1 WCDMA signal; Pout = –13 dBm
–68
–79
Alternate-channel power
ratio
1 WCDMA signal; Pout = –9 dBm
–80.5
–69
dBc
4 WCDMA signals; Pout = –23 dBm per carrier
(1) Single 4-MHz CW baseband input tone, differential-ended 196 VRMS
.
6
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
www.ti.com
SLWS184J –MARCH 2006–REVISED MAY 2011
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 2500 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
–2.892
dB
G
Voltage gain(1)
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
–1.379
dB
P1dB
IP3
Output compression point
Output IP3
9.5
21
dBm
dBm
dBm
dBm
dBc
18
IP2
Output IP2
Measured at fLO + 2 × fBB
Unadjusted
63
Carrier feedthrough
Sideband suppression
–38
–47
Unadjusted
(1) Single 4-MHz CW baseband input tone, differential-ended 196 VRMS
.
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 3600 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
–1.265
dB
G
Voltage gain(1)
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
1.529
dB
P1dB
IP3
Output compression point
Output IP3
9.5
23
dBm
dBm
dBm
dBm
dBc
20
IP2
Output IP2
Measured at fLO + 2 × fBB
Unadjusted
63
Carrier feedthrough
Sideband suppression
–41
–45
Unadjusted
(1) Single 4-MHz CW baseband input tone, differential-ended 196 VRMS
.
ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 4000 MHz at 0 dBm, TRF370315 (unless
otherwise noted).
RF Output Parameters
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TRF370315: Output RMS voltage over input I (or
Q) RMS voltage
–2.242
dB
G
Voltage gain(1)
TRF370333: Output RMS voltage over input I (or
Q) RMS voltage
0.543
dB
P1dB
IP3
Output compression point
Output IP3
9
22
dBm
dBm
dBm
dBm
dBc
19
IP2
Output IP2
Measured at fLO + 2 × fBB
Unadjusted
50
Carrier feedthrough
Sideband suppression
–37
–40
Unadjusted
(1) Single 4-MHz CW baseband input tone, differential-ended 196 VRMS
.
Copyright © 2006–2011, Texas Instruments Incorporated
7
TRF370315
TRF370333
SLWS184J –MARCH 2006–REVISED MAY 2011
www.ti.com
TYPICAL CHARACTERISTICS
OUTPUT POWER
vs
OUTPUT POWER
vs
BASEBAND VOLTAGE
FREQUENCY AND TEMPERATURE
15
0
−1
−2
−3
−4
−5
−6
−7
−8
−9
−10
TRF3703-15
TRF3703-33
10
–40°C
5
0
85°C
25°C
-5
-10
-15
-20
LO = 0 dB
V
CC
= 5 V
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0.01
0.1
1
VBB - Baseband Voltage, Single-Ended, RMS - V
G010
Figure 1.
Figure 2.
OUTPUT POWER
OUTPUT POWER
vs
vs
FREQUENCY AND SUPPLY VOLTAGE
FREQUENCY AND LO POWER
0
−1
−2
−3
−4
−5
−6
−7
−8
−9
−10
0
−1
−2
−3
−4
−5
−6
−7
5.5 V
0 dBm
5 dBm
5 V
4.5 V
–5 dBm
LO = 0 dB
= 25°C
V
= 5 V
CC
T
A
T = 25°C
A
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G011
G012
Figure 3.
Figure 4.
8
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
www.ti.com
SLWS184J –MARCH 2006–REVISED MAY 2011
TYPICAL CHARACTERISTICS (continued)
P1dB
P1dB
vs
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND SUPPLY VOLTAGE
14
12
10
8
12
10
8
LO = 0 dB
5.5 V
V
CC
= 5 V
5 V
4.5 V
85°C
6
25°C
–40°C
6
4
4
2
2
LO = 0 dB
T
A
= 25°C
0
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G001
G002
Figure 5.
Figure 6.
TRF370315
P1dB
OIP3
vs
vs
FREQUENCY AND LO POWER
FREQUENCY AND TEMPERATURE
30
28
26
24
22
20
18
16
14
12
10
12
10
8
–5 dBm
25°C
85°C
5 dBm
0 dBm
6
4
–40°C
2
LO = 0 dBm
V
T
A
= 5 V
= 25°C
CC
V
CC
= 5 V
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G014
G003
Figure 7.
Figure 8.
Copyright © 2006–2011, Texas Instruments Incorporated
9
TRF370315
TRF370333
SLWS184J –MARCH 2006–REVISED MAY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
TRF370333
TRF370315
OIP3
OIP3
vs
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND SUPPLY VOLTAGE
30
28
26
24
22
20
18
16
14
12
10
30
28
26
24
22
20
18
16
14
12
10
5 V
25°C
85°C
4.5 V
5.5 V
–40°C
LO = 0 dB
= 5 V
LO = 0 dBm
V
T
= 25°C
CC
A
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G027
G015
Figure 9.
Figure 10.
TRF370333
TRF370315
OIP3
OIP3
vs
vs
FREQUENCY AND SUPPLY VOLTAGE
FREQUENCY AND LO POWER
40
36
32
28
24
20
16
12
30
28
26
24
22
20
18
16
14
12
10
LO = 0 dB
= 25°C
5 V
+5 dBm
T
A
4.5 V
–5 dBm
0 dBm
5.5 V
V
T
A
= 5 V
= 25°C
CC
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G028
G013
Figure 11.
Figure 12.
10
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
www.ti.com
SLWS184J –MARCH 2006–REVISED MAY 2011
TYPICAL CHARACTERISTICS (continued)
TRF370333
OIP3
UNADJUSTED SIDEBAND SUPPRESSION
vs
vs
FREQUENCY AND LO POWER
FREQUENCY AND TEMPERATURE
40
36
32
28
24
20
16
12
0
−10
−20
−30
−40
−50
−60
V
T
= 5 V
= 25°C
LO = 0 dB
CC
P
V
= –3 dBm
= 5 V
A
OUT
CC
0 dBm
85°C
25°C
+5 dBm
–5 dBm
–40°C
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G029
G007
Figure 13.
Figure 14.
UNADJUSTED SIDEBAND SUPPRESSION
vs
UNADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND SUPPLY VOLTAGE
FREQUENCY AND LO POWER
0
−10
−20
−30
−40
−50
−60
0
−10
−20
−30
−40
−50
−60
LO = 0 dB
V
P
T
= 5 V
= –3 dBm
OUT
= 25°C
CC
P
T
= –3 dBm
= 25°C
OUT
A
A
–5 dBm
5 V
0 dBm
5.5 V
5 dBm
4.5 V
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G008
G009
Figure 15.
Figure 16.
Copyright © 2006–2011, Texas Instruments Incorporated
11
TRF370315
TRF370333
SLWS184J –MARCH 2006–REVISED MAY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
ADJUSTED SIDEBAND SUPPRESSION
ADJUSTED SIDEBAND SUPPRESSION
vs
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND TEMPERATURE
−20
−30
−40
−50
−60
−70
−80
−20
−30
−40
−50
−60
−70
−80
Adj at 942.6 MHz
= 5 V
Adj at 1900 MHz
V
CC
V
CC
= 5 V
–40°C
85°C
25°C
–40°C
25°C
85°C
900
920
940
960
980
1000
1850
1870
1890
1910
1930
1950
f − Frequency − MHz
f − Frequency − MHz
G016
G017
Figure 17.
Figure 18.
ADJUSTED SIDEBAND SUPPRESSION
vs
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND SUPPLY VOLTAGE
−154
−156
−158
−160
−162
−164
−166
−168
−20
−30
−40
−50
−60
−70
−80
P
= –5 dBm
OUT
Adj at 2140 MHz
= 5 V
LO = 5 dBm
= 25°C
V
CC
T
A
5.5 V
5 V
85°C
–40°C
4.5 V
25°C
2140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2100
2120
2160
2180
2200
f − Frequency − GHz
f − Frequency − MHz
G019
G018
Figure 19.
Figure 20.
12
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
www.ti.com
SLWS184J –MARCH 2006–REVISED MAY 2011
TYPICAL CHARACTERISTICS (continued)
NOISE AT 13-MHz OFFSET (dBm/Hz)
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND TEMPERATURE
−154
−156
−158
−160
−162
−164
−166
−168
−154
−156
−158
−160
−162
−164
−166
−168
85°C
85°C
25°C
25°C
–40°C
–40°C
P
= 0 dBm
P
= –5 dBm
OUT
OUT
LO = 5 dBm
= 5 V
LO = 5 dBm
V = 5 V
CC
V
CC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
f − Frequency − GHz
f − Frequency − GHz
G020
G021
Figure 21.
Figure 22.
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
UNADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND SUPPLY VOLTAGE
−154
−156
−158
−160
−162
−164
−166
−168
0
−10
−20
−30
−40
−50
−60
−70
−80
P
= –10 dBm
LO = 0 dB
T = 25°C
A
OUT
LO = 5 dBm
= 5 V
V
CC
85°C
5 V
5.5 V
25°C
4.5 V
–40°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
f − Frequency − GHz
G022
G025
Figure 23.
Figure 24.
Copyright © 2006–2011, Texas Instruments Incorporated
13
TRF370315
TRF370333
SLWS184J –MARCH 2006–REVISED MAY 2011
www.ti.com
TYPICAL CHARACTERISTICS (continued)
UNADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND TEMPERATURE
0
−10
−20
−30
−40
−50
−60
−70
−80
LO = 0 dB
V
CC
= 5 V
85°C
25°C
–40°C
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G026
Figure 25.
14
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
www.ti.com
SLWS184J –MARCH 2006–REVISED MAY 2011
APPLICATION INFORMATION AND EVALUATION BOARD
Basic Connections
•
•
See Figure 26 for proper connection of the TRF3703315 and TRF370333 modulator.
Connect a single power supply (4.5 V–5.5 V) to pins 18 and 24. These pins should be decoupled as shown
on pins 4, 5, 6, and 7.
•
•
Connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to GND.
Connect a single-ended LO source of desired frequency to LOP (amplitude between –5 dBm and 12 dBm).
This should be ac-coupled through a 100-pF capacitor.
•
•
•
Terminate the ac-coupled LON with 50 Ω to GND.
Connect a baseband signal to pins 21 = I, 22 = I, 10 = Q, and 9 = Q.
The differential baseband inputs should be set to the proper level, 3.3 V for the TRF370333 or 1.5 V for the
TRF370315.
•
•
RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO ± baseband signal. This
pin should also be ac-coupled through a 100-pF capacitor.
All NC pins can be left floating.
ESD Sensitivity
RF devices may be extremely sensitive to electrostatic discharge (ESD). To prevent damage from ESD, devices
should be stored and handled in a way that prevents the build-up of electrostatic voltages that exceed the rated
level. Rated ESD levels should also not be exceeded while the device is installed on a printed circuit board
(PCB). Follow these guidelines for optimal ESD protection:
•
Low ESD performance is not uncommon in RF ICs; see the Absolute Maximum Ratings table. Therefore,
customers’ ESD precautions should be consistent with these ratings.
•
The device should be robust once assembled onto the PCB unless external inputs (connectors, etc.) directly
connect the device pins to off-board circuits.
Copyright © 2006–2011, Texas Instruments Incorporated
15
TRF370315
TRF370333
SLWS184J –MARCH 2006–REVISED MAY 2011
www.ti.com
J3
IN
J4
IP
1
1
SMA_END
SMA_END
W1
2POS_JUMPER
W2
2POS_JUMPER
R2
0
R3
0
C6
C5
C7
C4
+
+
1000 pF
1000 pF
4.7uF
4.7 mF
J1
LOP
C1
1
SMA_END
1
18
17
16
15
14
13
NC
VccMOD
GND
J7
RF_OUT
100 pF
2
GND
C3
R1
0
3
1
LOP
RF_OUT
NC
SMA_END
U1
TRF3703
4
100 pF
LON
C8
C9
5
J2
LON
GND
GND
0.1 mF
(Note 1)
0.1 mF
(Note 1)
C2
6
NC
NC
1
SMA_END
100 pF
R4
R5
0
0
J5
QN
J6
QP
1
1
SMA_END
SMA_END
S0214-01
(1) Do not install.
Figure 26. TRF3703 EVM Schematic
16
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
www.ti.com
SLWS184J –MARCH 2006–REVISED MAY 2011
Figure 27 shows the top view of the TRF3703 EVM board.
GND
+5 V
+5 V
GND
BBIN
BBIP
LOP
RF_OUT
LON
50 W
BBQP
BBQN
K001
Figure 27. TRF3703 EVM Board Layout
Table 1. Bill of Materials for TRF3703 EVM
Value
Footprint
QTY
Part Number
Vendor
Digi-Key Number
REF DES
Not
Installed
Tantalum
3216
2
T491A475K010AS KEMET
399-1561-1-ND
C6, C7
4.7-μF, 10-V,
10% capacitor
1000-pF, 50-V, 603
5% capacitor
2
3
ECJ-1VC1H102J
ECJ-1VC1H101J
Panasonic
PCC2151CT-ND
C4, C5
100-pF, 50-V,
5% capacitor
603
Panasonic
Panasonic
PCC101ACVCT-ND C1, C2, C3
Capacitor
603
603
0
5
C8, C9
0-Ω resistor,
ERJ-3GEY0R00V
P0.0GCT-ND
R1, R2, R3,
R4, R5
1/10-W, 5%
Copyright © 2006–2011, Texas Instruments Incorporated
17
TRF370315
TRF370333
SLWS184J –MARCH 2006–REVISED MAY 2011
www.ti.com
Table 1. Bill of Materials for TRF3703 EVM (continued)
Value
TRF3703
Footprint
QTY
Part Number
Vendor
Digi-Key Number
REF DES
U1
Not
Installed
24-QFN-PP-
4X4MM
1
6
TI
Newark
SMA connectors SMA_END_
SMALL
16F3627
142-0711-821
N/A
J1, J2, J3,
J4, J5, J6,
J7
2POS_HEADER 2POS_JUMP
2
HTSW-150-07-L-S SAMTEC
W1, W2
GSM Applications
The TRF370315 and TRF370333 are suited for GSM applications because of the high linearity and low noise
level over the entire recommended operating range. These devices also have excellent EVM performance, which
makes them ideal for the stringent GSM/EDGE applications.
WCDMA Applications
The TRF370315 and TRF370333 are also optimized for WCDMA applications where both adjacent-channel
power ratio (ACPR) and noise density are critically important. Using Texas instruments’ DAC568X series of
high-performance digital-to-analog converters as depicted in Figure 28, excellent ACPR levels were measured
with one-, two-, and four-WCDMA carriers. See Electrical Characteristics, fLO = 2140 MHz for exact ACPR
values.
16
TRF3703
RF_OUT
I/Q
DAC5687
Modulator
16
CLK1
CLK2
VCXO
TRF3761
PLL
LO Generator
CDCM7005
Clock Gen
Ref Osc
B0176-01
Figure 28. Typical Transmit Setup Block Diagram
18
Copyright © 2006–2011, Texas Instruments Incorporated
TRF370315
TRF370333
www.ti.com
SLWS184J –MARCH 2006–REVISED MAY 2011
DEFINITION OF SPECIFICATIONS
Unadjusted Carrier Feedthrough
This specification measures the amount by which the local oscillator component is attenuated in the output
spectrum of the modulator relative to the carrier. This further assumes that the baseband inputs delivered to the
pins of the TRF370315 and TRF370333 are perfectly matched to have the same dc offset (VCM). This includes
all four baseband inputs: I, I, Q, and Q. This is measured in dBm.
Adjusted (Optimized) Carrier Feedthrough
This differs from the unadjusted suppression number in that the baseband input dc offsets are iteratively adjusted
around their theoretical value of VCM to yield the maximum suppression of the LO component in the output
spectrum. This is measured in dBm.
Unadjusted Sideband Suppression
This specification measures the amount by which the unwanted sideband of the input signal is attenuated in the
output of the modulator, relative to the wanted sideband. This further assumes that the baseband inputs
delivered to the modulator input pins are perfectly matched in amplitude and are exactly 90° out of phase. This is
measured in dBc.
Adjusted (Optimized) Sideband Suppression
This differs from the unadjusted sideband suppression in that the baseband inputs are iteratively adjusted around
their theoretical values to maximize the amount of sideband suppression. This is measured in dBc.
Suppressions Overtemperature
This specification assumes that the user has gone though the optimization process for the suppression in
question, and set the optimal settings for the I, Q inputs. This specification then measures the suppression when
temperature conditions change after the initial calibration is done.
Figure 29 shows a simulated output and illustrates the respective definitions of various terms used in this data
sheet. The graph assumes a baseband input of 50 kHz.
10
P
OUT
0
−10
−20
−30
−40
−50
−60
−70
−80
RD
ND
3
LSB
(dBc)
SBS
(dBc) (dBm)
C
2
USB
(dBc)
LSB
(Undesired)
USB
(Desired)
RD
RD
3
USB
3
LSB
ND
ND
USB
2
LSB
Carrier
2
−200 −150 −100 −50
0
50
100 150 200
f − Frequency Offset − kHz (Relative to Carrier)
G024
Figure 29. Graphical Illustration of Common Terms
Copyright © 2006–2011, Texas Instruments Incorporated
19
TRF370315
TRF370333
SLWS184J –MARCH 2006–REVISED MAY 2011
www.ti.com
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision I (July, 2010) to Revision J
Page
•
•
•
•
•
•
•
•
•
•
Changed voltage gain specifications for fLO = 350-MHz performance data ......................................................................... 4
Updated voltage gain specifications for fLO = 400-MHz performance data .......................................................................... 4
Revised voltage gain specifications for fLO = 900-MHz performance data ........................................................................... 5
Changed voltage gain specifications for fLO = 1800-MHz performance data ....................................................................... 5
Revised voltage gain specifications for fLO = 1960-MHz performance data ......................................................................... 6
Updated voltage gain specifications for fLO = 2140-MHz performance data ........................................................................ 6
Revised voltage gain specifications for fLO = 2500-MHz performance data ......................................................................... 7
Changed voltage gain specifications for fLO = 3600-MHz performance data ....................................................................... 7
Updated voltage gain specifications for fLO = 4000-MHz performance data ........................................................................ 7
Replaced Figure 1 ................................................................................................................................................................ 8
Changes from Revision H (January, 2010) to Revision I
Page
•
•
•
•
Changed document title to reflect 0.35-GHz minimum operating level ................................................................................ 1
Updated Description section to reflect 350-MHz minimum operation ................................................................................... 1
Changed LO frequency range minimum specification from 0.4 GHz to 0.35 GHz ............................................................... 4
Added Electrical Characteristics table for fLO = 350-MHz performance data ....................................................................... 4
20
Copyright © 2006–2011, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
16-Apr-2011
PACKAGING INFORMATION
Status (1)
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
TRF370315IRGER
TRF370315IRGET
TRF370333IRGER
TRF370333IRGERG4
TRF370333IRGET
TRF370333IRGETG4
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
VQFN
VQFN
VQFN
VQFN
VQFN
VQFN
RGE
RGE
RGE
RGE
RGE
RGE
24
24
24
24
24
24
3000
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
3000
3000
250
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
250
Green (RoHS
& no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
16-Apr-2011
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Feb-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TRF370315IRGER
TRF370315IRGET
TRF370333IRGER
TRF370333IRGET
VQFN
VQFN
VQFN
VQFN
RGE
RGE
RGE
RGE
24
24
24
24
3000
250
330.0
330.0
330.0
330.0
12.4
12.4
12.4
12.4
4.3
4.3
4.3
4.3
4.3
4.3
4.3
4.3
1.5
1.5
1.5
1.5
8.0
8.0
8.0
8.0
12.0
12.0
12.0
12.0
Q1
Q1
Q2
Q2
3000
250
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Feb-2012
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TRF370315IRGER
TRF370315IRGET
TRF370333IRGER
TRF370333IRGET
VQFN
VQFN
VQFN
VQFN
RGE
RGE
RGE
RGE
24
24
24
24
3000
250
338.1
338.1
338.1
338.1
338.1
338.1
338.1
338.1
20.6
20.6
20.6
20.6
3000
250
Pack Materials-Page 2
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