TUSB501 [TI]

USB 3.0 5Gbps 单通道转接驱动器;


型号：	TUSB501
厂家：	TEXAS INSTRUMENTS
描述：	USB 3.0 5Gbps 单通道转接驱动器驱动驱动器
文件：	总17页 (文件大小：1868K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TUSB501

www.ti.com.cn

ZHCSBD9A –AUGUST 2013–REVISED AUGUST 2013

支持均衡的 USB 3.0 单通道转接驱动器

查询样品: TUSB501

特性

说明

TUSB501 是一款 3^rd代 3.3V USB 3.0 单通道转接驱动

•

积极低功耗架构（典型值）：

器。当 5Gbps 超高速 USB 信号由印刷电路板 (PCB)

或电缆传播时，信号完整性会由于损耗和符号间干扰而

降级。 TUSB501 通过采用补偿通道损耗的均衡来恢复

进入的数据，并且使用一个高差分电压来向外驱动信

号。这样扩展了可能的通道长度，并且使系统能够符

合 USB3.0 兼容性。 TUSB501 高级状态机使得它对于

主机和器件透明。

–

126mW 有源功耗

在 U2/U3 中为 20mW

无连接时为 3mW

•

自动低频率周期信号 (LFPS) 去加重 (DE) 控制

出色的抖动与损耗补偿

–

32 英寸的 FR4 4 毫英寸带状线

长度 3m 的 30 美制电线标准 (AWG) 电缆

•

集成型终端

加电后，TUSB501 在 TX 对上定期执行接收器检测。

如果它检测到一个超高速 USB 接收器，RX 端接被启

用，TUSB501 为转接驱动做好准备。

小型 2mm × 2mm 四方扁平无引线 (QFN) 封装

可选接收器均衡、发射器去加重和输出摆动

支持热插拔

接收器均衡器具有三个由引脚 EQ 控制的增益设

置：3dB，6dB 和 9dB。这应该在 TUSB501 之前根

据损耗量设定。相似地，输出驱动器支持去加重和输

出摆动配置（引脚 DE 和 OS）。这些设置使得

TUSB501 可被灵活地放置在超高速 USB 路径上，并

具有最优性能。

静电放电 (ESD) 保护 ±5kV 人体模型 (HBM)

应用范围

•

手机、计算机、扩展坞、电视、有源电缆、背板

DE OS

与之前几代产品相比，TUSB501 在全部链路状态下功

耗减少，一个更加强大的 OS 选项，经改进的接收器

均衡设置和一个智能 LFPS 控制器。这个控制器感测

低频信号，并且自动禁用驱动器去加重，以实现 USB

3.0 兼容性。

RX+

TX+

TX-

Receiver/

Equalizer

Driver

RX-

3^rdGeneration

State Machine

LFPS

Controller

VCC

GND

TUSB501 被封装在小型 2mm x 2mm 四方扁平无引线

(QFN) 封装内，并在 –40°C 至 85°的工业用温度范围

内运行。

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

English Data Sheet: SLLSEG5

TUSB501

ZHCSBD9A –AUGUST 2013–REVISED AUGUST 2013

www.ti.com.cn

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

DRF PACKAGE

(TOP VIEW)

VCC

RXP

RXN

TXP

TXN

GND

PIN FUNCTIONS

TYPE

DESCRIPTION

NAME

RXP

RXN

TXN

NO.

Differential input pair for 5 Gbps SuperSpeed USB signals.

Differential output pair for 5 Gbps SuperSpeed USB signals.

Differential I/O

TXP

Sets the receiver equalizer gain. 3-state input with integrated pull-up and pull-

down resistors.

Sets the output de-emphasis gain. 3-state input with integrated pull-up and pull-

down resistors.

CMOS Input

Power

Sets the output swing (differential voltage amplitude). 2-state input with an

integrated pull-down resistor.

VCC

GND

3.3-V power supply

Reference ground

Thermal Pad

TUSB501

www.ti.com.cn

ZHCSBD9A –AUGUST 2013–REVISED AUGUST 2013

DEVICE CONFIGURATION

Table 1. Control Pin Effects (Typical Values)

DESCRIPTION

LOGIC STATE

Low

GAIN

3 dB

6 dB

9 dB

Equalization Amount

Floating

High

OUTPUT DIFFERENTIAL VOLTAGE

FOR THE TRANSITION BIT

DESCRIPTION

LOGIC STATE

Low

930 mV_pp

Output Swing

Amplitude

High

1300 mV_pp

(1)

DE-EMPHASIS RATIO

DESCRIPTION

LOGIC STATE

FOR OS = LOW

0 dB

FOR OS = HIGH

–2.6 dB

Low

Floating

High

De-Emphasis

Amount

–3.5 dB

–5.9 dB

–6.2 dB

–8.3 dB

(1) Typical values

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

–0.5

MAX

UNIT

(2)

Supply voltage range

V_CC

Differential I/O

CMOS inputs

Voltage range at any input or output

terminal

V_CC+ 0.5

±5

(3)

Human body model (all pins)

Electrostatic discharge

(4)

Charged-device model (all pins)

±1.5

Storage temperature, T_STG

–65

-40

150

°C

Maximum junction temperature, T_J

105

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions

is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to the GND terminals.

(3) Tested in accordance with JEDEC Standard 22, Test Method A114-B.

(4) Tested in accordance with JEDEC Standard 22, Test Method C101-A.

THERMAL INFORMATION

TUSB501

THERMAL METRIC⁽¹⁾

UNITS

DRF

102.4

90.3

21.2

θ_JA

Junction-to-ambient thermal resistance

θ_JC(top)

θ_JB

Junction-to-case(top) thermal resistance

Junction-to-board thermal resistance

°C/W

ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case(bottom) thermal resistance

ψ_JB

3.6

θ_JC(bottom)

70.2

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

TUSB501

ZHCSBD9A –AUGUST 2013–REVISED AUGUST 2013

www.ti.com.cn

RECOMMENDED OPERATING CONDITIONS

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

V_CC

T_A

Main power supply

3.3

3.6

Operating free-air temperature

AC coupling capacitor

–40

°C

C_AC

100

200

POWER SUPPLY CHARACTERISTICS

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP⁽¹⁾

MAX⁽²⁾

UNIT

Link in U0 with SuperSpeed USB

data transmission, OS = Low

38.1

I_CC-ACTIVEAverage active current

Link in U0 with SuperSpeed USB

data transmission, OS = High

43.8

Link has some activity, not in U0,

OS = Low

I_CC-IDLE

I_CC-U2U3

I_CC-NC

Average current in idle state

Average current in U2/U3

29.8

6.1

Link in U2 or U3

No SuperSpeed USB device is

connected to TXP, TXN

Average current with no connection

1.3

OS = Low

OS = High

126

145

P_D

Power Dissipation in U0

234

(1) TYP values use V_CC= 3.3 V, T_A= 25°C.

(2) MAX values use V_CC= 3.6 V, T_A= –40°C.

DC ELECTRICAL CHARACTERISTICS

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

0.6

UNIT

3-State CMOS Inputs (EQ, DE)

V_IH

V_IM

V_IL

V_F

High-level input voltage

Mid-level input voltage

Low-level input voltage

Floating voltage

2.8

V_CC/ 2

V_IN= High impedance

V_CC/ 2

190

R_PU

R_PD

I_IH

Internal pull-up resistance

Internal pull-down resistance

High-level input current

Low-level input current

kΩ

µA

190

V_IN= 3.6 V

I_IL

V_IN= GND, V_CC= 3.6 V

-36

2-State CMOS Input (OS)

V_IH

V_IL

V_F

High-level input voltage

Low-level input voltage

Floating voltage

0.5

V_IN= High impedance

GND

270

R_PD

I_IH

Internal pull-down resistance

High-level input current

Low-level input current

kΩ

µA

V_IN= 3.6 V

V_IN= GND

I_IL

-1

TUSB501

www.ti.com.cn

ZHCSBD9A –AUGUST 2013–REVISED AUGUST 2013

AC ELECTRICAL CHARACTERISTICS

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Differential Receiver (RXP, RXN)

Input differential voltage swing

AC-coupled differential peak-to-peak

signal

V_DIFF-pp

V_CM-RX

Z_RX-DIFF

Z_RX-CM

100

1200

mV_pp

Common-mode voltage bias in the

receiver (DC)

3.3

Present after a SuperSpeed USB

device is detected on TXP/TXN

Differential input impedance (DC)

120

Common-mode input impedance

(DC)

Present after a SuperSpeed USB

device is detected on TXP, TXN

22.8

Present when no SuperSpeed USB

device is detected on TXP, TXN.

Measured over the range of 0-500

mV with respect to GND.

Z_RX-HIGH-

IMP-DC-POS

Common-mode input impedance

with termination disabled (DC)

kΩ

V_RX-LFPS-

DET-DIFF-pp

Low Frequency Periodic Signaling

(LFPS) Detect Threshold

Below the minimum is squelched

100

300

mV_pp

Differential Transmitter (TXP, TXN)

OS = Low, No load

OS = High, No load

930

Transmitter differential voltage swing

(transition-bit)

V_TX-DIFF-PP

mV_pp

1300

V_TX-DE-

RATIO

C_TX

Transmitter de-emphasis

DE = Floating, OS = Low

At 2.5 GHz

-3.5

TX input capacitance to GND

1.25

Z_TX-DIFF

Z_TX-CM

I_TX-SC

Differential impedance of the driver

125

31.25

Common-mode impedance of the

driver

Measured with respect to AC ground

over 0-500 mV

18.75

TX short circuit current

TX ± shorted to GND

Common-mode voltage bias in the

transmitter (DC)

V_CM-TX

1.2

2.5

AC common-mode voltage swing in

active mode

V_CM-TX-AC

Within U0 and within LFPS

Tested with a high-pass filter

100

mV_pp

V_TX-IDLE-

DIFF -AC-pp

V_TX-CM-

Differential voltage swing during

electrical idle

Absolute delta of DC CM voltage

during active and idle states

Restrict the test condition to meet

100 mV

100

DeltaU1-U0

V_{TX-idle-diff-}DC electrical idle differential output

voltage

Voltage must be low pass filtered to

remove any AC component

Differential Transmitter (TXP, TXN)

Output rise, fall time

see Figure 4

20%-80% of differential voltage

measured 1 inch from the output pin

t_R, t_F

20%-80% of differential voltage

measured 1 inch from the output pin

t_RF-MM

Output Rise, Fall time mismatch

De-emphasis = -3.5 dB propagation

delay between 50% level at input

and output

t_diff-LH

t_diff-HL

Differential propagation delay

see Figure 2

290

3.6

t_idleEntry

t_idleExit

Idle entry and exit times

see Figure 3

TUSB501

ZHCSBD9A –AUGUST 2013–REVISED AUGUST 2013

www.ti.com.cn

AC ELECTRICAL CHARACTERISTICS (continued)

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Timing

Apply 0 V to VCC, connect

Time from power applied until RX

termination

SuperSpeed USB termination to

TX±, apply 3.3 V to VCC, and

measure when Z_RX-DIFFis enabled.

t_READY

Jitter

T_JTX-EYE

D_JTX

(1) (2)

(3)

Total jitter

0.213

0.197

0.016

EQ = Floating, OS = High,

DE = High

See Figure 1.

(2)

(3)

Deterministic jitter

(2) (4)

(3)

R_JTX

Random jitter

(1) Includes R_Jat 10^-12

(2) Measured at the ends of reference channel in Figure 1 with K28.5 pattern, V_ID= 1000 mV_pp, 5 Gbps, -3.5 dB de-emphasis from source.

(3) UI = 200 ps.

(4) R_jcalculated as 14.069 times the RMS random jitter for 10^-12BER.

spacer

PARAMETER MEASUREMENT INFORMATION

Jitter

Measurement

TUSB501

AWG

Up to 3m

(30AWG)

1"-6"

24"

Figure 1. Jitter Measurement Setup

spacer

T_{diff_HL}

T_{diff_LH}

OUT

Figure 2. Propagation Delay

TUSB501

www.ti.com.cn

ZHCSBD9A –AUGUST 2013–REVISED AUGUST 2013

PARAMETER MEASUREMENT INFORMATION (continued)

IN+

Vcm

IN-

V_{RX-LFPS-DET-DIFF-pp}

t_idleExit

t_idleEntry

OUT+

Vcm

OUT-

Figure 3. Electrical Idle Mode Exit and Entry Delay

spacer

80%

20%

t_r

Figure 4. Output Rise and Fall Times

spacer

Transition

bit

Transition

bit

Consecutive bits

DE =0dB

Consecutive bits

415mV

DE =-3.5dB

DE =-6.2dB

V_TX-DIFF-PP

DE =-6.2dB

DE =-3.5dB

DE =0dB

-415mV

0ps

200ps

400ps

600ps

800ps

1000ps

1200ps

Figure 5. Transmitter Differential Voltage, OS = L

TUSB501

ZHCSBD9A –AUGUST 2013–REVISED AUGUST 2013

www.ti.com.cn

PARAMETER MEASUREMENT INFORMATION (continued)

Figure 6. Input for Typical Output Measurement at TUSB501 at T_A= 25°C

TUSB501

www.ti.com.cn

ZHCSBD9A –AUGUST 2013–REVISED AUGUST 2013

PARAMETER MEASUREMENT INFORMATION (continued)

Figure 7. Typical Output Eye for Jitter Measurement Setup in Figure 1

at T_A= 25°C, DE = HIGH, OS = HIGH, EQ = NC

TUSB501

ZHCSBD9A –AUGUST 2013–REVISED AUGUST 2013

www.ti.com.cn

REVISION HISTORY

Changes from Original (August 2013) to Revision A

Page

•

Changed 从产品预览改为生产数据 ....................................................................................................................................... 1

PACKAGE OPTION ADDENDUM

www.ti.com

10-Dec-2020

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

TUSB501DRFR

ACTIVE

WSON

DRF

3000 RoHS & Green

NIPDAU

Level-2-260C-1 YEAR

-40 to 85

T501

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

28-Jul-2019

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

TUSB501DRFR

WSON

DRF

3000

180.0

8.4

2.3

1.15

4.0

8.0

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

28-Jul-2019

*All dimensions are nominal

Device

Package Type Package Drawing Pins

WSON DRF

SPQ

Length (mm) Width (mm) Height (mm)

210.0 185.0 35.0

TUSB501DRFR

3000

Pack Materials-Page 2

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