V62/10605-01XE [TI]
PRECISION, LOW POWER INSTRUMENTATION AMPLIFIERS; 精密低功耗仪表放大器
| 型号： | V62/10605-01XE |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | PRECISION, LOW POWER INSTRUMENTATION AMPLIFIERS |
| 文件： | 总22页 (文件大小：1402K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INA129-EP
www.ti.com
SBOS508 –DECEMBER 2009
PRECISION, LOW POWER INSTRUMENTATION AMPLIFIERS
Check for Samples: INA129-EP
1
FEATURES
SUPPORTS DEFENSE, AEROSPACE
AND MEDICAL APPLICATIONS
•
•
•
•
•
•
Low Offset Voltage
•
•
•
•
Controlled Baseline
One Assembly/Test Site
One Fabrication Site
Available in Military (–55°C/125°C)
Temperature Range(1)
Low Input Bias Current
High CMR
Inputs Protected to ±40 V
Wide Supply Range: ±2.25 V to ±18 V
Low Quiescent Current
•
•
•
Extended Product Life Cycle
Extended Product-Change Notification
Product Traceability
APPLICATIONS
•
•
•
•
•
Bridge Amplifier
Thermocouple Amplifier
RTD Sensor Amplifier
Medical Instrumentation
Data Acquisition
D PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
RG
RG
V+
VO
Ref
V- IN
V+
IN
V-
(1) Custom temperature ranges available
DESCRIPTION
The INA129 is a low power, general purpose instrumentation amplifier offering excellent accuracy. The versatile
3-op amp design and small size make it ideal for a wide range of applications. Current-feedback input circuitry
provides wide bandwidth even at high gain (200 kHz at G = 100).
A single external resistor sets any gain from 1 to 10,000. The INA129 provides an industry-standard gain
equation; the INA129 gain equation is compatible with the AD620.
The INA129 is laser trimmed for very low offset voltage, drift and high common-mode rejection (113 dB at
G ≥ 100). It operates with power supplies as low as ±2.25 V, and quiescent current is only 750 μA - ideal for
battery operated systems. Internal input protection can withstand up to ±40 V without damage.
The INA129 is available in an SO-8 surface-mount package specified for the –55°C to 125°C temperature range.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2009, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
INA129-EP
SBOS508 –DECEMBER 2009
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
V+
7
49.4 kW
G = 1 +
RG
INA129
2
1
-
VIN
Over-Voltage
Protection
A1
40 kW
40 kW
24.7 kW
6
5
A3
VO
RG
8
3
24.7 kW
A2
Ref
+
VIN
Over-Voltage
Protection
40 kW
40 kW
4
V-
ORDERING INFORMATION(1)
TA
PACKAGE(2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING
–55°C to 125°C
SOIC-D
INA129MDREP
129EP
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(2) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted)
VALUE
±18
UNIT
V
VS
Supply voltage
Analog input voltage range
Output short-circuit (to ground)
Operating temperature
±40
V
Continuous
TA
–55 to 125
–55 to 125
150
°C
°C
°C
°C
TSTG
TJ
Storage temperature range
Junction temperature
Lead temperature (soldering, 10s)
300
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
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SBOS508 –DECEMBER 2009
ELECTRICAL CHARACTERISTICS
At TA = 25°C, VS = ±15 V, RL = 10 kΩ (unless otherwise noted)
Boldface limits apply over the specified temperature range, TA = –55°C to 125°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
Offset Voltage, RTI
TA = 25°C
Over temperature
±100 ±800/G
±150 ±2050/G
±1.6 ±175/G
±1.8 ±175/G
Initial
µV
TA = 25°C, VS = ±2.25 V to ±18 V
Over temperature
vs power supply
µV/V
Long-term stability
Impedance, differential
Common mode
±1 ±3/G
µV/mo
Ω || pF
Ω || pF
V
1010 || 2
1011||9
Common mode voltage range(1)
VO = 0 V
(V+) − 2
(V+) − 1.4
(V−) + 1.7
(V−) + 2
V
Safe input voltage
±40
V
G = 1
Over temperature
G = 10
75
67
86
106
125
130
93
Over temperature
G = 100
84
VCM = ±13 V,
ΔRS = 1 kΩ
Common-mode rejection
dB
113
98
Over temperature
G = 1000
113
98
Over temperature
CURRENT
±2
±1
±8
±16
±8
Bias current
nA
nA
Over temperature
Offset Current
Over temperature
±16
NOISE
f = 10 Hz
10
8
f = 100 Hz
nV/√Hz
G = 1000,
RS = 0 Ω
Noise voltage, RTI
Noise current
f = 1 kHz
8
fB = 0.1 Hz to 10 Hz
f = 10 Hz
0.2
0.9
0.3
30
µVpp
pA/√Hz
pAPP
G = 1000,
RS = 0 Ω
f = 1 kHz
fB = 0.1 Hz to 10 Hz
GAIN
1 +
(49.4 kΩ/RG)
Gain equation
Range of gain
V/V
V/V
1
10000
±0.1
G = 1
±0.05
±0.02
±0.05
±0.5
Over temperature
G = 10
±0.15
±0.5
Gain error
Over temperature
G = 100
±0.65
±0.65
±1.1
%
Over temperature
G = 1000
±2
(1) Input common-mode range varies with output voltage — see typical curves.
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ELECTRICAL CHARACTERISTICS (continued)
At TA = 25°C, VS = ±15 V, RL = 10 kΩ (unless otherwise noted)
Boldface limits apply over the specified temperature range, TA = –55°C to 125°C.
PARAMETER
Gain vs temperature(2)
49.4-kΩ resistance(2) (3)
TEST CONDITIONS
MIN
TYP
MAX
UNIT
G = 1
±1
±10
ppm/°C
ppm/°C
±25
±100
VO = ±13.6 V,
G = 1
±0.0001
±0.0018
Over temperature
G = 10
±0.0035
±0.0035
±0.0055
±0.0035
±0.0055
±0.0003
±0.0005
±0.001
Nonlinearity
% of FSR
Over temperature
G = 100
Over temperature
G = 1000
(4)
See
OUTPUT
Positive
Voltage
RL = 10 kΩ
RL = 10 kΩ
(V+) − 1.4
(V−) + 1.4
(V+) − 0.9
(V−) + 0.8
1000
V
Negative
Load capacitance stability
Short-curcuit current
pF
+6/−15
mA
FREQUENCY RESPONSE
G = 1
G = 10
1300
700
200
20
Bandwidth, −3 dB
Slew rate
kHz
G = 100
G = 1000
VO = ±10 V,
G = 10
4
V/µs
G = 1
G = 10
7
7
Settling time, 0.01%
µs
µs
G = 100
9
G = 1000
50% overdrive
80
4
Overload recovery
POWER SUPPLY
Voltage range
±2.25
±15
±18
±750
V
VIN = 0 V
±700
Current, total
µA
Over temperature
±1200
TEMPERATURE RANGE
Specification
−55
−55
125
125
°C
°C
Operating
8-pin DIP
80
θJA
°C/W
SO-8 SOIC
150
(2) Specified by wafer test.
(3) Temperature coefficient of the 49.4-kΩ term in the gain equation.
(4) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.
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SBOS508 –DECEMBER 2009
TYPICAL CHARACTERISTICS
At TA = 25°C, VS = ±15 V, unless otherwise noted.
GAIN
vs
COMMON-MODE REJECTION
vs
FREQUENCY
FREQUENCY
140
120
100
80
60
50
40
30
20
10
0
G =1000V/V
G =100V/V
G = 1000V/V
G = 100V/V
G = 10V/V
G =10V/V
G =1V/V
60
40
G = 1V/V
20
−
−
10
20
0
1k
10k
100k
1M
10M
10
100
1k
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
Figure 1.
Figure 2.
POSITIVE POWER SUPPLY REJECTION
NEGATIVE POWER SUPPLY REJECTION
vs
vs
FREQUENCY
FREQUENCY
140
120
100
80
140
120
100
80
G = 1000V/V
G =100V/V
G =1000V/V
G =100V/V
60
60
G=10V/V
G=1V/V
G= 10V/V
G=1V/V
40
40
20
20
0
0
10
100
1k
10k
100k
1M
10
Frequency (Hz)
Frequency (Hz)
Figure 3.
Figure 4.
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TYPICAL CHARACTERISTICS (continued)
At TA = 25°C, VS = ±15 V, unless otherwise noted.
INPUT COMMON-MODE RANGE
INPUT COMMON-MODE RANGE
vs
vs
OUTPUT VOLTAGE
(VS = ±15 V)
OUTPUT VOLTAGE
(VS = ±5 V, ±2.5 V)
5
4
3
2
1
0
15
≥
G
10
≥
G
10
≥
G
10
≥
G
10
10
5
G=1
G=1
G=1
G = 1
≥
G
10
G=1
+15V
VD/2
VD/2
VCM
0
+
+
VO
1
2
Ref
5
-15V
3
4
5
V
V
= ±5V
10
S
S
= ±2.5V
15
-1
0
1
2
3
4
5
-5
-4
-3
-2
-15
-10
-5
0
5
10
15
Output Voltage (V)
Output Voltage (V)
Figure 5.
Figure 6.
INPUT-REFERRED NOISE
SETTLING TIME
vs
vs
FREQUENCY
GAIN
100
10
1
1k
100
10
1
0.01%
0.1%
G = 1V / V
G =10V/V
100
10
1
G =100, 1000V/V
Current Noise
0.1
10
100
1000
1
1
10
100
1k
10k
Gain (V/V)
Frequency (Hz)
Figure 7.
Figure 8.
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SBOS508 –DECEMBER 2009
TYPICAL CHARACTERISTICS (continued)
At TA = 25°C, VS = ±15 V, unless otherwise noted.
QUIESCENT CURRENT AND SLEW RATE
vs
TEMPERATURE
INPUT OVER-VOLTAGE V/I CHARACTERISTICS
5
0.85
0.8
6
5
4
3
2
1
4
3
2
1
0
Flat region represents
normal linear operation.
G = 1000V/V
G = 1V / V
0.75
Slew Rate
+15V
0.7
1
2
G = 1 V / V
IQ
0.65
3
4
5
VIN
G = 1000V/V
IIN
15V
0 6
-75
-50
-25
0
25
50
75
100
125
-50 -40 -30 -20 -10
0
10
20
30
40
50
Temperature (°C)
Input Voltage (V)
Figure 9.
Figure 10.
INPUT BIAS CURRENT
vs
INPUT OFFSET VOLTAGE WARM-UP
TEMPERATURE
10
2
1
0
8
6
4
2
IOS
0
-2
-4
-6
-8
-10
IB
1
2
Typical I and I
OS
B
Range ±2nA at 25°C
500
400
300
Time (ms)
200
100
0
-75
-50
-25
0
25
50
75
100
125
Temperature (°C)
Figure 11.
Figure 12.
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TYPICAL CHARACTERISTICS (continued)
At TA = 25°C, VS = ±15 V, unless otherwise noted.
OUTPUT VOLTAGE SWING
vs
OUTPUT VOLTAGE SWING
vs
OUTPUT CURRENT
POWER SUPPLY VOLTAGE
(V+)
(V+)
(V+)-0.4
(V+)-0.4
+85°C
+25°C
(V+)-0.8
(V+)-1.2
(V+)-0.8
(V+)-1.2
-40 °C
+25°C
RL = 10 kΩ
(V-)+1.2
(V-)+0.8
(V-)+0.4
(V-)
(V-)+1.2
-40 °C
+85°C
-40 °C
(V-)+0.8
(V-)+0.4
(V-)
+85°C
0
5
10
15
20
0
1
2
3
4
Output Current (mA)
Power Supply Voltage (V)
Figure 13.
Figure 14.
SHORT-CIRCUIT OUTPUT CURRENT
MAXIMUM OUTPUT VOLTAGE
vs
vs
TEMPERATURE
FREQUENCY
30
25
20
15
10
5
18
16
14
12
10
8
G =10, 100
-I
SC
G = 1
G = 1000
6
+I
SC
4
2
0
0
1k
10k
100k
1M
-75
-50
-25
0
25
50
75
100
125
Temperature (°C)
Frequency (Hz)
Figure 15.
Figure 16.
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TYPICAL CHARACTERISTICS (continued)
At TA = 25°C, VS = ±15 V, unless otherwise noted.
TOTAL HARMONIC DISTORTION + NOISE
vs
SMALL SIGNAL
(G = 1, 10)
FREQUENCY
1
VO = 1 V r m s
G = 1
500kHz Measurement
Bandwidth
RL = 10kW
G = 1
20mV/div
G = 10
0.1
G =100, RL = 100kW
0.01
G =10V/V
RL = 100kW
G =1, RL = 100kW
Dashed Portion
is noise limited.
0.001
100
1k
10k
100k
5ms/div
Frequency (Hz)
Figure 17.
Figure 18.
SMALL SIGNAL
(G = 100, 1000)
LARGE SIGNAL
(G = 1, 10)
G = 10 0
20mV/div
G = 10 0 0
G = 1
5V/div
G = 10
5ms/div
20ms/div
Figure 19.
Figure 20.
LARGE SIGNAL
(G = 100, 1000)
VOLTAGE NOISE 0.1 Hz TO 10 Hz
INPUT-REFERRED, G ≥ 100
G =100
5V/div
0.1mV/div
G =1000
20ms/div
1s/div
Figure 21.
Figure 22.
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APPLICATION INFORMATION
Figure 23 shows the basic connections required for operation of the INA129. Applications with noisy or high
impedance power supplies may require decoupling capacitors close to the device pins as shown.
The output is referred to the output reference (Ref) terminal which is normally grounded. This must be a
low-impedance connection to assure good common-mode rejection. A resistance of 8 Ω in series with the Ref pin
will cause a typical device to degrade to approximately 80 dB CMR (G = 1).
Setting the Gain
Gain is set by connecting a single external resistor, RG, between pins 1 and 8.
49.4 kW
G = 1 +
RG
(1)
Commonly used gains and resistor values are shown in Figure 23.
The 49.9-kΩ term in Equation 1 comes from the sum of the two internal feedback resistors of A1 and A2. These
on-chip metal film resistors are laser trimmed to accurate absolute values. The accuracy and temperature
coefficient of these internal resistors are included in the gain accuracy and drift specifications of the INA129.
The stability and temperature drift of the external gain setting resistor, RG, also affects gain. RG’s contribution to
gain accuracy and drift can be directly inferred from Equation 1. Low resistor values required for high gain can
make wiring resistance important. Sockets add to the wiring resistance which will contribute additional gain error
(possibly an unstable gain error) in gains of approximately 100 or greater.
V+
0.1mF
49.4kW
RG
G = 1 +
7
2
1
Over Voltage
Protection
-
DESIRED
GAIN (V/V)
NEAREST
1% RG (W)
RG
VIN
(W)
A1
40kΩ
40kΩ
-
VO
=
G · (VIN+ - VIN
)
1
2
5
10
20
50
100
200
500
1000
2000
5000
10000
NC
NC
24.7kΩ
49.4K
12.35K
5489
2600
1008
499
248
99
49.5
24.7
9.88
4.94
49.9K
12.4K
5.49K
2.61K
1K
499
249
100
49.9
24.9
9.76
4.87
6
5
A3
RG
+
8
24.74kΩ
A2
VO
-
Load
+
VIN
3
Over Voltage
Protection
Ref
40kΩ
40kΩ
4
0.1mF
NC: No Connection
-
IN
V
V-
Also drawn in simplified form:
V
R
G
O
Ref
+
IN
V
Figure 23. Basic Connections
Dynamic Performance
Figure 1 shows that, despite its low quiescent current, the INA129 achieves wide bandwidth, even at high gain.
This is due to the current-feedback topology of the input stage circuitry. Settling time also remains excellent at
high gain.
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Noise Performance
The INA129 provides very low noise in most applications. Low frequency noise is approximately 0.2 μVPP
measured from 0.1 Hz to 10 Hz (G ≥ 100). This provides dramatically improved noise when compared to
state-of-the-art chopper-stabilized amplifiers.
Offset Trimming
The INA129 is laser trimmed for low offset voltage and offset voltage drift. Most applications require no external
offset adjustment. Figure 24 shows an optional circuit for trimming the output offset voltage. The voltage applied
to Ref terminal is summed with the output. The operational amplifier buffer provides low impedance at the Ref
terminal to preserve good common-mode rejection.
-
VIN
V+
VO
RG
INA129
Ref
100mA
1/2 REF200
+
VIN
100W
100W
10kW
OPA177
±10mV
Adjustment Range
100mA
1/2 REF200
V-
Figure 24. Optional Trimming of Output Offset Voltage
Input Bias Current Return Path
The input impedance of the INA129 is extremely high (approximately 1010 Ω). However, a path must be provided
for the input bias current of both inputs. This input bias current is approximately ±2 nA. High input impedance
means that this input bias current changes very little with varying input voltage.
Input circuitry must provide a path for this input bias current for proper operation. Figure 25 shows various
provisions for an input bias current path. Without a bias current path, the inputs will float to a potential which
exceeds the common-mode range, and the input amplifiers will saturate.
If the differential source resistance is low, the bias current return path can be connected to one input (see the
thermocouple example in Figure 25). With higher source impedance, using two equal resistors provides a
balanced input with possible advantages of lower input offset voltage due to bias current and better
high-frequency common-mode rejection.
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Microphone,
Hydrophone
etc.
INA129
47kW
47kW
Thermocouple
INA129
10kW
INA129
Center-tap provides
bias current return.
Figure 25. Providing an Input Common-Mode Current Path
Input Common-Mode Range
The linear input voltage range of the input circuitry of the INA129 is from approximately 1.4 V below the positive
supply voltage to 1.7 V above the negative supply. As a differential input voltage causes the output voltage
increase, however, the linear input range will be limited by the output voltage swing of amplifiers A1 and A2. So
the linear common-mode input range is related to the output voltage of the complete amplifier. This behavior also
depends on supply voltage (see Figure 5 and Figure 6).
Input-overload can produce an output voltage that appears normal. For example, if an input overload condition
drives both input amplifiers to their positive output swing limit, the difference voltage measured by the output
amplifier will be near zero. The output of A3 will be near 0 V even though both inputs are overloaded.
Low Voltage Operation
The INA129 can be operated on power supplies as low as ±2.25 V. Performance remains excellent with power
supplies ranging from ±2.25 V to ±18 V. Most parameters vary only slightly throughout this supply voltage range.
Operation at very low supply voltage requires careful attention to assure that the input voltages remain within
their linear range. Voltage swing requirements of internal nodes limit the input common-mode range with low
power supply voltage. Figure 5 and Figure 6 show the range of linear operation for ±15 V, ±5 V, and ±2.5 V
supplies.
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+5V
-
2.5V ∆V
VO
RG
INA129
300W
Ref
2.5V + ∆V
Figure 26. Bridge Amplifier
-
VO
VIN
+
RG
INA129
Ref
R1
C
1
0.1mF
1MW
1
=
f
-3dB
2pR1C1
OPA130
= 1.59 Hz
Figure 27. AC-Coupled Instrumentation Amplifier
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V+
10.0V
6
REF102
2
R1
R2
4
Pt100
Cu
Cu
K
VO
RG
INA129
Ref
R3
100Ω = Pt100 at 0°C
SEEBECK
COEFFICIENT
(mV/°C)
ISA
TYPE
R1, R2
MATERIAL
+Chromel
-Constantan
+Iron
-Constantan
+Chromel
-Alumel
58.5
50.2
39.4
38
66.5kW
76.8kW
97.6kW
102kW
E
J
K
T
+Copper
-Constantan
Figure 28. Thermocouple Amplifier With RTD Cold-Junction Compensation
VIN
-
IO
=
R1
· G
R1
VIN
+
RG
INA129
Ref
IB
A1
IO
Load
A
1
I
ERROR
B
OPA177
OPA131
OPA602
OPA128
± 1.5 nA
± 50 pA
± 1 pA
± 75 fA
Figure 29. Differential Voltage to Current Converter
14
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Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): INA129-EP
INA129-EP
www.ti.com
SBOS508 –DECEMBER 2009
RG = 5.6kW
2.8kW
G = 10
VO
LA
RG/2
INA129
Ref
RA
2.8kW
VG
390kW
VG
1/2
NOTE: Due to the INA129’s current-feedback
OPA2131
1/2
10kW
RL
topology, V is approximately 0.7 V less than
G
OPA2131
the common-mode input voltage. This DC offset
in this guard potential is satisfactory for many
guarding applications.
390kW
Figure 30. ECG Amplifier With Right-Leg Drive
Copyright © 2009, Texas Instruments Incorporated
Submit Documentation Feedback
15
Product Folder Link(s): INA129-EP
PACKAGE OPTION ADDENDUM
www.ti.com
23-Oct-2010
PACKAGING INFORMATION
Status (1)
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
INA129MDREP
V62/10605-01XE
ACTIVE
ACTIVE
SOIC
SOIC
D
D
8
8
2500
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
Request Free Samples
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
Request Free Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF INA129-EP :
Catalog: INA129
•
NOTE: Qualified Version Definitions:
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
23-Oct-2010
Catalog - TI's standard catalog product
•
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA129MDREP
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SOIC
SPQ
Length (mm) Width (mm) Height (mm)
367.0 367.0 35.0
INA129MDREP
D
8
2500
Pack Materials-Page 2
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