2SC5199-R [TOSHIBA]
TRANSISTOR 12 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power;
| 型号： | 2SC5199-R |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 12 A, 160 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power 局域网 放大器 晶体管 |
| 文件： | 总4页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5199
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5199
Power Amplifier Applications
Unit: mm
•
•
•
High breakdown voltage: V
= 160 V (min)
CEO
Complementary to 2SA1942
Suitable for use in 80-W high fidelity audio amplifier’s output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
160
160
5
V
V
V
A
A
Collector-emitter voltage
Emitter-base voltage
Collector current
I
12
C
Base current
I
1.2
B
Collector power dissipation
(Tc = 25°C)
P
120
W
C
Junction temperature
Storage temperature range
T
150
°C
°C
JEDEC
JEITA
―
―
j
T
stg
−55 to 150
TOSHIBA
2-21F1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 9.75 g (typ.)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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2SC5199
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
= 160 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
V
V
―
―
―
―
―
5.0
5.0
―
μA
μA
V
CBO
CB
EB
E
Emitter cut-off current
I
= 5 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
V
I
= 50 mA, I = 0
160
C
B
h
FE (1)
(Note)
V
V
= 5 V, I = 1 A
55
―
160
CE
C
DC current gain
h
= 5 V, I = 6 A
35
―
―
―
―
74
0.35
1.0
30
―
2.5
1.5
―
FE (2)
CE
C
Collector-emitter saturation voltage
Base-emitter voltage
V
I
= 8 A, I = 0.8 A
V
V
CE (sat)
C
B
V
V
V
V
= 5 V, I = 6 A
C
BE
CE
CE
CB
Transition frequency
f
= 5 V, I = 1 A
MHz
pF
T
C
Collector output capacitance
C
= 10 V, I = 0, f = 1 MHz
170
―
ob
E
Note: h
classification R: 55 to 110, O: 80 to 160
FE (1)
Marking
Part No. (or abbreviation code)
TOSHIBA
2SC5199
Lot No.
JAPAN
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SC5199
I
– V
I – V
C BE
C
CE
10
8
10
8
250
200
Common emitter
Tc = 25°C
150
100
6
6
50
40
Tc = 100°C
25°C
4
4
30
−25°C
20
2
2
Common emitter
V
= 5 V
CE
I
= 10 mA
B
0
0
0
0
2
4
6
8
10
0.4
0.8
1.2
1.6
2.0
Collector-emitter voltage
V
(V)
Base-emitter voltage
V
(V)
CE
BE
V
– I
h
– I
FE C
CE (sat)
C
10
1
1000
100
10
Tc = 100°C
Tc = 25°C
Tc = 100°C
Tc = 25°C
Tc = −25°C
0.1
Tc = −25°C
Common emitter
/I = 10
I
C
B
0.01
0.01
0.1
1
10
100
Collector current
I
C
(A)
Common emitter
= 5 V
V
CE
1
0.01
0.1
1
10
Collector current
I
C
(A)
Safe Operating Area
30
10
I
I
max (pulsed)*
C
C
1 ms*
10 ms*
max (continuous)
5
3
DC operation
Tc = 25°C
100 ms*
1
0.5
0.3
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
V
max
100
CEO
0.05
2
3
10
30
300
Collector-emitter voltage
V
(V)
CE
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2SC5199
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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