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元器件品牌
2SK211
[TOSHIBA]
Silicon N Channel Junction Type FM Tuner Applications; 硅N沟道结型FM调谐器应用
元器件型号：
2SK211
生产厂家：
TOSHIBA SEMICONDUCTOR
描述和应用：
Silicon N Channel Junction Type FM Tuner Applications
硅N沟道结型FM调谐器应用
PDF文件：
总6页 (文件大小：715K)
下载文档：
下载PDF数据表文档文件
型号参数：2SK211参数
查看货源
2SK211_07
Silicon N Channel Junction Type FM Tuner Applications
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156
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17
TOSHIBA
2SK2110
MOS Field Effect Transistor
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156
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20
KEXIN
2SK2110
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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on line
156
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146
NEC
2SK2110
Low on-resistance RDS(on)=1.5 MAX High switching speed Drain to source voltage VDSS 100
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156
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5
TYSEMI
2SK2110
Small Signal Field-Effect Transistor, 1-Element, Silicon, SC-62, POWER MINIMOLD, 3 PIN
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on line
156
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0
NEC
2SK2110
Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
NEC
2SK2111
Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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11
TYSEMI
2SK2111
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
Warning
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on line
156
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119
NEC
2SK2111
MOS Field Effect Transistor
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on line
156
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51
KEXIN
2SK2112
MOS Field Effect Transistor
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on line
156
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54
KEXIN
2SK2112
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
Warning
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on line
156
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114
NEC
2SK2112
Low on-resistance RDS(on)=1.2 MAX. VGS=4.0V,ID=0.5A High switching speed
Warning
: Undefined variable $rtag in
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on line
156
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19
TYSEMI
2SK2112
Power Field-Effect Transistor, 1A I(D), 100V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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2
NEC
2SK2112-AZ
Power Field-Effect Transistor, 1A I(D), 100V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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156
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1
NEC
2SK2113
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156
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51
ETC
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