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元器件品牌
GT30J101_06
[TOSHIBA]
Silicon N Channel IGBT High Power Switching Applications; 硅N沟道IGBT高功率开关应用
元器件型号：
GT30J101_06
生产厂家：
TOSHIBA SEMICONDUCTOR
描述和应用：
Silicon N Channel IGBT High Power Switching Applications
硅N沟道IGBT高功率开关应用
开关 双极性晶体管
PDF文件：
总6页 (文件大小：194K)
下载文档：
下载PDF数据表文档文件
型号参数：GT30J101_06参数
查看货源
GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA
GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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31
TOSHIBA
GT30J121_06
Silicon N Channel IGBT High Power Switching Applications
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156
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30
TOSHIBA
GT30J122
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
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156
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273
TOSHIBA
GT30J122A
Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications
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126
TOSHIBA
GT30J126
High Power Switching Applications Fast Switching Applications
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: Undefined variable $rtag in
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156
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46
TOSHIBA
GT30J301
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
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: Undefined variable $rtag in
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156
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180
TOSHIBA
GT30J311
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
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: Undefined variable $rtag in
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156
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46
TOSHIBA
GT30J322
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
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: Undefined variable $rtag in
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453
TOSHIBA
GT30J324
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
88
TOSHIBA
GT30J324
Silicon N Channel IGBT High Power Switching Applications
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: Undefined variable $rtag in
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29
TOSHIBA
GT30J324
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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38
TOSHIBA
GT30J324(Q)
IGBT DUAL 600V 30A TO-3PN
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: Undefined variable $rtag in
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156
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0
TOSHIBA
GT30J324_06
Silicon N Channel IGBT High Power Switching Applications
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: Undefined variable $rtag in
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156
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18
TOSHIBA
GT30J341
Discrete IGBTs Silicon N-Channel IGBT
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156
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31
TOSHIBA
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