GT50J327 [TOSHIBA]
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application; 东芝绝缘栅双极晶体管硅N沟道IGBT电流谐振逆变器开关的应用
| 型号： | GT50J327 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application |
| 文件： | 总6页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT50J327
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J327
Current Resonance Inverter Switching Application
Unit: mm
•
•
•
•
•
•
Enhancement mode type
High speed : t = 0.19 µs (typ.) (I = 50A)
f
C
Low saturation voltage: V
= 1.9 V (typ.) (I = 50A)
C
CE (sat)
FRD included between emitter and collector
Fourth generation IGBT
TO-3P(N) (Toshiba package name)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
V
V
600
±25
29
V
V
CES
1.Gate
2.Collector(heatsink)
3.Emitter
GES
@ Tc = 100°C
Continuous collector
I
A
A
A
C
current
@ Tc = 25°C
50
Pulsed collector current
I
100
20
CP
JEDEC
JEITA
DC
Diode forward current
Pulsed
I
F
I
40
FP
TOSHIBA
2-16C1C
@ Tc = 100°C
56
Collector power
P
W
C
Weight: 4.6 g (typ.)
dissipation
@ Tc = 25°C
140
150
−55 to 150
Junction temperature
T
°C
°C
j
Storage temperature range
T
stg
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance (IGBT)
Thermal resistance (diode)
R
R
0.89
2.7
°C/W
°C/W
th (j-c)
th (j-c)
Equivalent Circuit
Marking
Collector
Part No. (or abbreviation code)
TOSHIBA
GT50J327
Gate
Lot No.
Emitter
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2005-02-09
GT50J327
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
3.0
Typ.
Max
Unit
I
I
V
V
= ±25 V, V = 0
±500
1.0
nA
mA
V
GES
GE
CE
CE
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
= 600 V, V
= 0
CES
GE
V
I
I
= 50 mA, V = 5 V
6.0
GE (OFF)
C
C
CE
V
= 50 A, V
= 15 V
GE
1.9
2500
0.20
0.27
0.19
0.44
2.3
V
CE (sat)
C
V
= 10 V, V = 0, f = 1 MHz
GE
pF
ies
CE
t
Resistive Load
Rise time
r
Turn-on time
Switching time
t
t
V
V
= 300 V, I = 50 A
C
on
CC
GG
µs
= ±15 V, R = 39 Ω
Fall time
t
f
0.32
G
(Note 1)
Turn-off time
Diode forward voltage
off
V
I
I
= 15 A, V = 0
GE
2.0
0.2
V
F
F
F
Reverse recovery time
t
= 15 A, di/dt = −100 A/µs
µs
rr
Note 1: Switching time measurement circuit and input/output waveforms
V
GE
90%
10%
0
0
R
G
R
L
I
C
0
90%
90%
V
CC
10%
10%
V
CE
t
d (off)
t
f
t
r
t
t
off
on
2
2005-02-09
GT50J327
I
– V
I – V
C CE
C
CE
100
80
60
40
20
0
100
80
60
40
20
0
Common emitter
Tc = −40°C
Common emitter
Tc = 25°C
10
15
15
9
20
10
9
20
8
= 7 V
5
8
V
4
GE
V
4
= 7 V
GE
0
1
2
3
5
0
1
2
3
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
I
– V
I – V
C GE
C
CE
100
80
60
40
20
0
100
80
Common emitter
Tc = 125°C
10
Common emitter
9
8
V
CE
= 5 V
20
15
60
40
20
0
V
= 7 V
GE
25
Tc = 125°C
−40
0
1
2
3
4
5
0
2
4
6
8
10
Collector-emitter voltage
V
(V)
Gate-emitter voltage
V
(V)
CE
GE
V
– Tc
CE (sat)
4
3
2
1
Common emitter
V
GE
= 15 V
I
= 100 A
C
70
50
30
10
0
−40
0
40
80
120
160
Case temperature Tc (°C)
3
2005-02-09
GT50J327
V
V
– Q
C – V
CE
CE, GE
G
500
400
300
200
100
0
20
16
12
8
10000
1000
100
Common emitter
= 6 Ω
Tc = 25°C
R
L
C
ies
V
CE
= 300 V
100
200
Common emitter
= 0
f = 1 MHz
C
oes
4
V
GE
C
res
Tc = 25°C
0
10
0
160
240
320
400
1
10
Collector-emitter voltage
100
1000
80
Gate charge
Q
(nC)
V
(V)
G
CE
Switching Time – R
Switching Time – I
G
C
10
1
10
1
Common emitter
= 300 V
Common emitter
= 300 V
V
V
CC
CC
I
= 50 A
= ±15 V
R
= 39 Ω
= ±15 V
C
G
V
V
GG
GG
Tc = 25°C
t
t
off
on
Tc = 25°C
t
r
t
off
t
f
t
on
t
f
0.1
0.1
0.01
t
r
0.01
1
10
Gate resistance
100
(Ω)
1000
0
10
20
30
40
50
60
R
Collector current
I
(A)
G
C
Safe Operating Area
Reverse Bias SOA
1000
100
10
1000
100
10
<
=
*: Single
T
V
R
125°C
= 20 V
= 39 Ω
j
non-repetitive
GG
G
pulse Tc = 25°C
Curves must be
derated linearly
with increases
in temperature.
I
max (pulsed) *
10 ms*
C
10 µs*
I
max
C
(continuous)
100 µs*
DC operation
1 ms*
1
1
0.1
0.1
1
10
100
1000
10000
1
10
100
1000
10000
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
4
2005-02-09
GT50J327
I max – Tc
C
r
– t
th (t)
w
60
50
40
30
20
10
0
102
101
100
Common emitter
= 15 V
Tc = 25°C
V
GE
Diode stage
IGBT stage
1
−
−
10
10
2
3
−
10
5
−
4
−
3
2
1
−
100
(s)
101
102
−
−
25
50
75
100
125
150
10
10
10
10
10
Case temperature Tc (°C)
Pulse width
t
w
I
– V
I , t – I
rr rr F
F
F
50
40
50
500
Common collector
= 0
V
GE
30
300
30
20
10
100
t
rr
5
3
50
30
I
Common collector
di/dt = −100 A/µs
rr
Tc = 125°C
0.8
25
10
0
V
= 0
GE
−40
Tc = 25°C
1
10
0
0.4
1.2
V
1.6
2.0
0
4
8
12
16
20
Forward voltage
(V)
Forward current
I
F
(A)
F
C – V
j
I , t – di/dt
rr rr
R
300
100
Common collector
= 15 A
f = 1 MHz
Tc = 25°C
200
100
0
10
8
I
F
Tc = 25°C
t
rr
50
30
6
10
4
I
rr
5
3
2
0
1
0
40
80
120
160
200
1
3
5
10
30 50 100
300 500
Reverse voltage
V
(V)
di/dt (A/µs)
R
5
2005-02-09
GT50J327
RESTRICTIONS ON PRODUCT USE
030619EAA
•
•
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
6
2005-02-09
相关型号：
GT50J341
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16C1S, TO-3P(N), 3 PIN, Insulated Gate BIP Transistor
TOSHIBA
GT50N322A
TRANSISTOR 50 A, 1000 V, N-CHANNEL IGBT, LEAD FREE, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor
TOSHIBA
GT50S101
TRANSISTOR 50 A, 1400 V, N-CHANNEL IGBT, 2-37A1B, 3 PIN, Insulated Gate BIP Transistor
TOSHIBA
GT520
Ceramic Capacitor, Multilayer, Ceramic, 3000V, 12.5% +Tol, 12.5% -Tol, SL, 500ppm/Cel TC, 0.000002uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT
CDE
GT530
Ceramic Capacitor, Multilayer, Ceramic, 3000V, 8.33% +Tol, 8.33% -Tol, SL, 500ppm/Cel TC, 0.000003uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT
CDE
©2020 ICPDF网 联系我们和版权申明